Abstract: Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continous non-fugitive phase and a substaintially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.

Abstract: A finishing machine (1) for finishing a work surface (20) which consists of a floor of terrazzo, marble, stone, concrete or the like, comprises at least two finishing units (3a, 4a; 3b, 4b; 3c, 4c, 300) which are supported by the frame (14, 100) of the finishing machine and which are arranged for grinding, polishing and/or machining of the work surface (20), and each machining unit comprises a motor (4a, 4b, 4c, 200) and a rotatably mounted working disc (41) driven by the motor. The finishing units (3a, 4a; 3b, 4b; 3c, 4c, 300) are individually tiltable relative to the frame (14, 100) about respective axes that are substantially parallel to the work surface (20).

Abstract: A method for producing a mirror (10) from a titanium-based material by using the technique of ultraprecision machining. The mirror produced using this method has both a shape accuracy and a surface roughness in the submicrometer region. The mirror (10) is made from a titanium-based material having a shape accuracy and a surface roughness in the submicrometer region, whose basic shape (11) has a has a reflecting surface (12) having a surface roughness of less than 60 nm, and in particular of less than 30 nm.

Abstract: A semiconductor process includes polishing a substrate with a slurry in an enclosure. Polishing the substrate is stopped. First mist is injected into the enclosure, such that the first mist has at least about 80% of saturation of a liquid or gaseous solvent in a carrier within the enclosure.

Abstract: A polishing wheel including a lower polishing surface and defining a different color from a secondary portion of the polishing wheel, so as to indicate wear of the polishing surface. The polishing surface includes a plurality of main radial flutes extending from a central passage to an outer edge. A reduced profile for the main radial flutes is provided adjacent to the outer edge. A plurality of secondary radial flutes is provided extending from the outer edge, but not in communication with either the central passage or the main radial flutes. The reduced profile for the main radial flute is defined by a variable depth portion. The secondary radial flutes defined by a variable depth portion. Each of the main radial flutes and the secondary radial flutes formed by a circular saw. An indexing machine is used to move the polishing wheel during the forming process.

Abstract: The present invention provides a CMP apparatus less susceptible to slurry adhesion, easy to cleaning off the adhering slurry therefrom and excellent in chemical resistance. The present invention is a CMP apparatus, at least one covered surface selected from the group consisting of a head portion surface and an arm portion surface for holding a polishing target member on a polishing pad, a slurry feed pipe surface and an apparatus main body inside wall being covered with a fluororesin.

Abstract: A chemical-mechanical polishing machine and associated methods are disclosed. One embodiment of the machine includes a polishing pad, a wafer carrier corresponding to the polishing pad and configured to carry a semiconductor wafer, and a transfer station proximate to the polishing pad for holding the wafer during loading and/or unloading. At least one of the wafer carrier and the transfer station is configured to dissipate electrostatic charge from the wafer.

Abstract: An alumina-film-polishing composition is for use in chemical mechanical polishing of an object to be polished that includes an alumina film with an irregular surface, so as to planarize the irregular surface. The polishing composition contains an alumina abrasive grain, and a protection-film-forming agent for forming a protection film on the surface of each of the alumina film and the alumina abrasive grain. The protection-film-forming agent is a water-soluble polymer that has a weight average molecular weight within a range of 100 to 1,000,000 and that is obtained by polymerizing a monomer having at least one OH group or COOH group in its molecule.

Abstract: A circular polishing pad has grooves formed on the surface in a spiral pattern with its center point offset from the center of the pad. The spiral pattern is an Archimedean spiral pattern or a parabolic spiral pattern. A target object is polished by using such a polishing pad without oscillating the platen to which the polishing pad is pasted or the polishing head that holds the target object.

Abstract: Apparatus and methods are provided relating to polishing a substrate using a polishing device, such as a polishing tape. The polishing device may be formed to include a base, a resin layer adhering to the base, and a plurality of embossed abrasive particles and/or abrasive beads affixed to the base by the resin layer. The plurality of abrasive particles and/or beads may be embossed in the resin layer. The plurality of abrasive beads may include a plurality of abrasive particles suspended in binder material. The plurality of abrasive particles and/or beads and the resin layer combine to form an abrasive side of the polishing device adapted to contact the substrate. Polishing of the substrate preferably includes polishing an edge of the substrate while the substrate is rotated by a holding device such that no apparatus other than the polishing tape contacts the edge while the substrate is rotating.

Abstract: According to one exemplary embodiment, a method includes a step of forming a polysilicon layer over a substrate by using a deposition process, where the deposition process causes polysilicon nodule defects to form on a top surface of the polysilicon layer. The method further includes performing a polysilicon CMP process on the polysilicon layer, where the polysilicon CMP process removes a substantial percentage of the polysilicon nodule defects from the top surface of the polysilicon layer. The CMP process removes at least 95.0 percent of the polysilicon nodule defects from the top surface of the polysilicon layer. According to this embodiment, the polysilicon CMP process utilizes a polishing pressure that is less than 1.5 psi. The polysilicon CMP process also utilizes a table speed of between 20.0 rpm and 40.0 rpm. The polysilicon CMP process further utilizes a colloidal silica slurry.

Abstract: Methods for cleaning an electrode assembly, which can be used for etching a dielectric material in a plasma etching chamber after the cleaning, comprise polishing a silicon surface of the electrode assembly, preferably to remove black silicon contamination therefrom.

Abstract: The invention relates to an apparatus for removing material from a surface of a workpiece during grinding and/or polishing of the surface by means of abrasive particles which are delivered by a liquid. The apparatus comprises a device for setting the gas content in the liquid, in particular for adding gas, in particular air, to the liquid.

Abstract: A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.

Abstract: A multi-step planarizing and polishing method includes performing a first and a second polishing steps, wherein one of the two polishing steps is performed using a silica abrasive based slurry, while the other one of the two polishing steps is performed using a CeO2 abrasive based slurry. A third polishing step is further performed using a fixed abrasive pad. Further, the thickness deviation of wafers entering the third polishing step is controlled.

Abstract: A system for chemical mechanical polishing (CMP) is disclosed which includes a polishing apparatus for polishing a surface of a substrate and a sensor for determining zone-specific substrate data respectively related to at least two zones of the substrate. A controller is provided for generating, in response to the zone-specific substrate data, at least one set-point value, e.g., a set-point window of values for at least one operating parameter of the polishing apparatus in a subsequent CMP process. The set-point value/set-point window of values may be displayed on a display device or automatically taken into account by the controller for controlling subsequent CMP processes.

Abstract: This polishing apparatus includes a head that holds a semiconductor wafer, a polishing pad that polishes a surface to be polished of the semiconductor wafer held by the head, and a dresser that reconditions the polishing pad by cutting the polishing pad. The polishing apparatus polishes a surface to be polished of the semiconductor wafer while causing the head and the polishing pad to rotate and reconditions the polishing pad by use of the dresser before and after polishing the surface to be polished. The polishing apparatus of the present invention supports at least two said dressers so that the dressers can rotate on their own axes and further includes a dresser oscillator that causes the dressers to oscillate simultaneously on the polishing pad.

Abstract: An information recording medium glass substrate manufactured by polishing the surface of a raw material glass plate. The polishing is divided into two steps, a step for performing a first polishing process to roughly polish the surface of the raw material glass plate to be smooth and a step for performing a second polishing process to finely polish the surface of the roughly polished raw material glass plate to be smoother. The second polishing process, using a polishing pad made of foam, is divided into two stages, pre-polishing with a polishing agent including abrasive grains of cerium oxide and post-polishing with a polishing agent including abrasive grains of silicon oxide. A rinsing process is performed between the pre-polishing and the post-polishing to rinse the raw material glass plate after the pre-polishing with a washing liquid to wash away the abrasive grains collected in the polishing pad in pre-polishing during the rinsing process.

Abstract: Methods of abrading surfaces by rotationally reciprocating abrasive surfaces in contact with the surfaces, abrasive articles for use in rotationally reciprocating tools, and methods of removing defects in a surface, where the methods include sanding using a rotationally reciprocating abrasive surface followed by one or more polishing operations are disclosed.

Abstract: A method of manufacturing a semiconductor device has polishing a film, and cleaning a polished surface by carrying out a first exposing the polished surface to an acidic first cleaning fluid having an effect of etching at least a partial region of the polished surface, and a second exposing the polished surface to an alkaline second cleaning fluid after the first exposing.

Abstract: A method for manufacturing a substrate for a magnetic disk, including the steps of (a) polishing a substrate with a polishing composition A containing alumina abrasives having an average particle size of from 0.05 to 0.5 ?m, and an oxidizing agent, and (b) polishing the substrate with a polishing composition B containing silica particles having an average particle size of from 0.005 to 0.1 ?m; a substrate for a magnetic disk, obtainable by the method for manufacturing a substrate for a magnetic disk; and a substrate for a magnetic disk having the following surface properties of a long-wavelength waviness of 0.05 nm or more and 0.3 nm or less, and an AFM surface roughness of 0.03 nm or more and 0.2 nm or less. The substrate for a magnetic disk may be suitably used in the manufacture of a hard disk having a high recording density. Especially, a hard disk having a recording density of 50 G bits or more per square inch may be industrially manufactured.

Abstract: A chemically mechanically polishing method is provided, which includes slide-contacting a polishing film with a polishing pad while feeding a first chemical liquid and a second chemical liquid to the polishing pad. The first chemical liquid contains an electrolyte and bubbles having a diameter ranging from 10 nm to 1000 ?m, and the second chemical liquid contains abrasive particles.

Abstract: Methods and apparatus are provided for concurrently chemically and mechanically polishing a substrate edge. The invention includes a substrate support adapted to rotate a substrate; a polishing head adapted to contact an edge of the substrate, the polishing head including a first channel adapted to apply a first fluid to the edge of the substrate; a second channel adapted to direct a second fluid onto a major surface of the rotating substrate; and a third channel adapted to direct a third fluid at the major surface of the substrate and to prevent the second fluid from diluting the first fluid. Numerous other aspects are provided.

Abstract: The invention provides a slurry composition for polishing color filters. The slurry composition at least includes an abrasive, a buffer solution and an additive. The abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and the mixture thereof. The buffer solution is used for adjusting pH to a desired range. The additive is used for stabilizing the polishing composition and also improving the polishing performance.

Abstract: The polishing method of a disk-shaped substrate for polishing an outer circumference 13 of a disk-shaped substrate using slurry is provided with in this sequence: a first polishing process for polishing the outer circumference 13 using an abrasive-grain inclusion brush 50 made of a resin in which polishing abrasive grains are included; and a second polishing process for polishing the outer circumference 13 using a resin brush 60 made of a resin in which the polishing abrasive grains are not included.

Abstract: The invention is directed to a method of polishing a surface of an object that includes aluminum. The method includes the step of contacting the surface of the object with a soft polishing pad and a polishing composition. The polishing composition includes abrasive particles, an agent that oxidizes aluminum, and a liquid carrier to polish the surface of the object. The polishing composition includes the abrasive particles suspended in the liquid carrier, and is applied at a pH above about 7.

Abstract: A method of performing mechano-chemical polishing serving as a primary polishing operation for a GaAs wafer, by using a mechano-chemical polishing solution containing dichloroisocyanuric acid, sodium tripolyphosphate, sodium sulfate, sodium carbonate, and colloidal silica as components except for water, includes the steps of: mounting the wafer on a mechano-chemical polishing apparatus; performing first-stage polishing by supplying the polishing apparatus with the polishing solution having a first composition in which 20-31 mass % of sodium tripolyphosphate is contained in the components except for water; and subsequently performing second-stage polishing by supplying the polishing apparatus with the polishing solution having a second composition in which 13-19 mass % of sodium tripolyphosphate is contained in the components except for water.

Abstract: A product information marking method including a back side grinding step for grinding the back side of a wafer having a plurality of devices formed on the front side so as to be partitioned by a plurality of separation lines, thereby obtaining a desired thickness of the wafer. After performing the back side grinding step, a marking step for marking product information on the back side of each device by applying a laser beam to the back side of the wafer is performed before separating the devices from each other. Thus, the product information is marked on each device in the stage of the wafer.

Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

Abstract: A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 ?m/cm2, wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

Abstract: A retaining ring for a chemical mechanical polishing tool comprises a pad side surface. The pad side surface has an edge portion adjacent its outer circumference. A surface normal of the edge portion and a surface normal of the pad side surface include an acute angle. Additionally, or alternatively, the retaining ring may comprise at least one groove extending from an inner circumference of the pad side surface to the outer circumference of the pad side surface. The groove comprises at least one edge portion adjacent the pad side surface. A surface normal of the at least one edge portion and a surface normal of the pad side surface include an acute angle.

Abstract: The disclosure relates to chemical mechanical planarization (CMP) polishing compositions including proline and a fluorochemical surfactant. The wafer polishing composition may be used as a solution substantially free of abrasive particles, the composition of which can be adjusted to control Oxide Removal Rate and oxide over nitride Selectivity Ratio in Shallow Trench Isolation (STI) processing of semiconductor wafers using a fixed abrasive CMP process. In certain embodiments, the disclosure provides a working liquid for fixed abrasive CMP including proline and a fluorochemical surfactant at a pH from 9 to 11. When used in a fixed abrasive CMP system and method for STI, exemplary working liquids may yield an Oxide Removal Rate of at least 500 angstroms per minute, and an oxide over nitride Selectivity Ratio of at least 5.

Abstract: A method of fabricating highly reliable tungsten interconnects takes into consideration the effects of charging that can occur within a CMP apparatus due to unrestricted DI water flow, limited only by house supply. Such effects are addressed with the use of a variable pressure input constant flow output in-line controller to the DI water line coupled to the head cleaning loading and unloading module of the CMP apparatus.

Abstract: A method for serially polishing a plurality of semiconductor wafers, wherein a CMP apparatus having a first polishing pad and a second polishing pad is provided. A first slurry composition is disposed between the first polishing pad and a first wafer when the first wafer is in a first state, and a first polishing on the first wafer via the first polishing pad and first slurry composition is commenced at a first commencement time. A second slurry composition is disposed between the second polishing pad and a second wafer when the second wafer is in a second state, and a second polishing on the second wafer via the second polishing pad and second slurry is commenced at a second commencement time, wherein the second commencement time differs from the first commencement time by a first intermediate period. One or more of the first wafer and the second wafer is rinsed with a pre-rinse agent for at least a portion of the first intermediate period.

Abstract: A processing pad and platen assembly for processing a substrate is provided. The platen assembly includes a spacer having an upper surface adapted to contact a lower surface of a pad assembly, an upper plate having a recessed area coupled to and disposed below the spacer, and a lower plate coupled to and disposed below the upper plate. The pad assembly includes at least a processing layer having a working surface adapted to process a substrate and an electrode disposed below the working surface of the processing layer. The spacer and the pad assembly have apertures therethrough to provide an electrolyte pathway to the platen assembly for removal of residual materials and other byproducts.

Abstract: The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

Abstract: A hard crystal substrate such as a GaN substrate or a SiC substrate is polished by using polishing oil slurry having abrading particles of artificial diamond clusters dispersed in a dispersant. The artificial diamond clusters include approximately spherical agglomerate particles with average particle size D50 of 20 nm or more and 50 nm or less, having primary particles with particle diameters of 2 nm or more and 10 nm or less. A rough polishing process is carried out first such that an average surface roughness of 0.5 nm or more and 1 nm or less is obtained, followed by a finishing process such that the average surface roughness of said surface becomes 0.2 nm or less.

Abstract: A method of manufacturing a perpendicular magnetic recording medium and a substrate for the medium are disclosed, in which abnormal protrusions on an underlayer made of a Ni—P alloy are automatically eliminated while maintaining a flat surface with high accuracy on the underlayer, and appropriate texture traces remain to promote magnetization alignment in the vertical direction in a perpendicular magnetic recording medium without adversely affecting the magnetization alignment. In the method, texture processing is carried out on an underlayer made of a Ni—P alloy on a nonmagnetic base plate using a polishing tape while supplying mixed slurry of a surfactant and abrasive grains of polycrystalline diamond, and then, texture polishing is carried out on the underlayer processed by the texture processing, using a polishing tape while supplying slurry containing an abrasive material and an organic acid until the surface of the underlayer is polished to an arithmetic mean roughness Ra of at most 0.

Abstract: A system and a method of operating a chemical mechanical polishing (CMP) system comprises a slurry delivering unit configured for locally varying the supply of slurry while polishing the substrate. To this end, the slurry delivering unit may comprise at least one slurry outlet over a polishing pad of the CMP system, wherein the at least one slurry outlet is controllably movable to distribute slurry over the polishing pad.

Abstract: The present invention provides a polishing pad, which has a flatness area and an emboss area on its polishing surface, wherein the flatness area is a flat surface with a roughness less than 20 ?m, for polishing a wafer; the emboss area has grooves, holes or a combination thereof, for pulling up a wafer from the polishing surface after polishing. By using the polishing pad according to the invention, a wafer may have a higher surface flatness after Chemical-Mechanical Polishing (CMP); and after polishing, the wafer is moved to the emboss area of the polishing pad, so that the wafer may be easily separated from the polishing pad surface.

Abstract: A solution for fixed abrasive chemical mechanical polishing process including a protection constituent, a hydrolysis constituent and water is described. The protection constituent is used to protect a silicon nitride and its concentration is between 0.001 wt % and 10 wt %. The hydrolysis constituent is used to hydrolyze a silicon oxide and its concentration is between 0.001 wt % and 10 wt %. The concentration ofthe water is between 80 wt % and 99.998 wt %.

Abstract: A method and apparatus for performing first and second polishings on a workpiece wherein the first and second polishings are performed using different operating parameters.

Abstract: A honing machine 1 is provided with a honing zone 5 for subjecting a work 2 to a liquid honing process and a washing zone 6 for subjecting the work 2 to which the liquid honing process was executed at the honing zone 5 to a washing process in a housing 4 shielded from an external air, the honing zone 5 and the washing zone 6 being disposed adjacently. A partition wall 7 for preventing an ambient gas of the honing zone 5 from entering into the washing zone 6 is disposed between the honing zone 5 and the washing zone 6 in the housing 4. An in-liquid conveying apparatus 10 for conveying the work 2 to which the liquid honing process was executed at the honing zone 5 from the honing zone 5 to the washing zone 6 with the work kept immersed in the liquid 72 in a carrying bath 11 is disposed in the housing 4.

Abstract: The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter DM wherein the mean particle diameter of the particles satisfies the equation: DM>W. The invention further provides a method of preparing the chemical-mechanical polishing composition.

Abstract: A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.

Abstract: In a slurry composition and a method of polishing a layer using the slurry composition, the slurry composition includes from about 3 to 20 percent by weight of an abrasive, from about 0.1 to 3 percent by weight of an ionic surfactant, from about 0.01 to 0.1 percent by weight of a nonionic surfactant, from about 0.01 to 1 percent by weight of a polish accelerating agent including an amino acid compound, and a remainder of an aqueous solution including a basic pH-controlling agent and water. The slurry composition including the nonionic surfactant and the polish accelerating agent may be used for speedily polishing a stepped upper portion of a silicon oxide layer, and may also enable a lower portion of the silicon oxide layer to function as a polish stop layer.

Abstract: Semiconductor wafers are polished between upper and lower polishing plates, the semiconductor wafer being polished on both sides while in a recess of a carrier by supplying a polishing agent. The wafer is double-side polished in a first polishing step, which is concluded with a negative overhang, defined as the difference between the thickness of the wafer and the thickness of the carrier after the first polishing step. The wafer is then double-side polished in a second polishing step, in which less than 1 ?m of material is removed from the surfaces of the wafer. Silicon semiconductor wafers having polished front and rear sides with a front side global planarity SBIRmax value of less than 100 nm, and a front side local planarity PSFQR value of 35 nm or less in an edge region, with an edge exclusion of 2 mm, are obtained.

Abstract: Pyrogenic silicon dioxde powder with a BET surface area of 30 to 90 m2/g, a DBP index of 80 or less, a mean aggregate area of less than 25000 nm2 and a mean aggregate circumference of less than 1000 nm, wherein at least 70% of the aggregates have a circumference of less than 1300 nm, It is prepared by mixing at least one silicon compound in vapour form, a free-oxygen-containing gas and a combustible gas in a burner of known construction, igniting this gas mixture at the mouth of the burner and burning it in the flame tube of the burner, separating the solid obtained from the gas mixture and optionally purifying, wherein the oxygen content of the free-oxygen-containing gas is adjusted so that the lambda value is greater than or equal to 1, the gamma value is between 1.2 and 1.8, the throughput is between 0.1 and 0.3 kg SiO2/m3 of core gas mixture and the mean normalised rate of flow of gas in the flame tube at the level of the mouth of the burner is at least 5 m/s. The powder can be used as a filler.

Abstract: A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of periodic acid, from about 0.2% to about 6% % by weight of silica abrasive having an average particle size of about 50 nm or less, and an amine in an amount sufficient to adjust the pH of the composition to between about 2.5 and 7. The removal selectivity of the ruthenium to a.low-K dielectric is greater than 20:1. Advantageously, the substrate further has a tantalum-containing compound, and the polishing rate of the tantalum-containing compound is about the same as the polishing rate of the ruthenium, so that the polishing process is a one-step process.

Abstract: A polishing composition for semiconductor wafers containing colloidal silica is disclosed, wherein the colloidal silica is prepared from an active silicic acid aqueous solution obtained by removing alkali from an alkali silicate aqueous solution and a quaternary ammonium base, and is stabilized with a quaternary ammonium base. The polishing composition contains no alkali metals. The polishing composition contains a buffer solution that is a combination of a weak acid having a pKa from 8.0 to 12.5 at 25° C. (pKa is a logarithm of the reciprocal of acid dissociation constant) and a quaternary ammonium base, and exhibits a buffer action in the range from pH8 to pH11.