Abstract: A semiconductor device includes a semiconductor layer that has a transistor structure including a p type source region, a p type drain region, an n type body region between the p type source region and the p type drain region, and a gate electrode facing the n type body region and a voltage-regulator diode that is disposed at the semiconductor layer and that has an n type portion connected to the p type source region and a p type portion connected to the gate electrode, in which the transistor structure and the voltage-regulator diode are unified into a single-chip configuration.

Abstract: Described herein is a method for manufacturing thin metal sheets and joints by removing material from a single block of material, i.e. for obtaining items including one or more thin sheets and/or thin elastic joints seamlessly connected to one another by means such as milling. The method can be employed in the manufacturing of a high-sensitivity, low-frequency, broadband monolithic mechanical sensor for measuring linear and angular displacements of based on a folded pendulum configuration for monitoring and control applications.

Abstract: Embodiments of a system and method for polishing substrates are provided. In one embodiment, a polishing system is provided that includes a polishing module having a platen, and a platen temperature control system. The platen temperature control system includes a PID controller, a fluid controller, and a heat exchanger. The flow controller is configured to control an amount of fluid provided from the heat exchanger to a channels of the platen in response to instructions provided by the PID controller.

Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

Abstract: A polishing method according to the present invention, includes polishing a polishing object containing a silicon material by using a polishing composition containing abrasive grains, a tri- or more polyvalent hydroxy compound and a dispersing medium and having pH of less than 6.0.

Abstract: A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

Abstract: A chemical mechanical polishing apparatus includes a rotatable platen to hold a polishing pad, a rotatable carrier to hold a substrate against a polishing surface of the polishing pad during a polishing process, a polishing liquid supply port to supply a polishing liquid to the polishing surface, a thermal control system including a movable nozzle to spray a medium onto the polishing surface to adjust a temperature of a zone on the polishing surface, an actuator to move the nozzle radially relative to an axis of rotation of the platen, and a controller configured to coordinate dispensing of the medium from the nozzle with motion of the nozzle across the polishing surface.

Abstract: The present invention provides a device for peening by coupling a laser shock wave and an ultrasonic shock wave in real time. The device includes a synchronization device, a laser device, two ultrasonic shock devices, a working platform and a control system. An upper casing is supported above a base through second hydraulic cylinders. Two supporting beams are provided under the upper casing through the second hydraulic cylinders. Limiting slide rails are provided under the upper casing through first hydraulic cylinders. The two ultrasonic shock devices are connected through the synchronization device, which is configured to synchronize movement and rotation of the two ultrasonic shock devices. The laser device is configured to generate a laser beam to pass through the upper casing and irradiate a surface of a workpiece. The control system controls the laser device to lag behind the two ultrasonic shock devices to perform laser shock.

Abstract: According to a processing method of a stone composite board, the two sides of a natural stone board are ground and flattened until a preset standard value of thickness variation is reached, then the surface planes and base material layers are subjected to pressure-compositing through adhesive layers, afterwards splitting is conducted, and the natural stone layer is subjected to calibrated planing with diamond roller and surface treatment to obtain the ultra-thin stone composite board.

Abstract: A polishing pad includes: a polishing layer having a polyurethane sheet containing substantially spherical cells, wherein E?(90%)/E?(30%) falls within a range of 0.4 to 0.7, where E?(90%) represents a storage modulus of the polyurethane sheet that has been exposed to an environment with a temperature of 23° C. and a relative humidity of 90%, as measured in a tension mode at 40° C. with an initial load of 148 g, a strain range of 0.1%, and a measurement frequency of 1.6 Hz, and E?(30%) represents a storage modulus of the polyurethane sheet that has been exposed to an environment with a temperature of 23° C. and a relative humidity of 30%, as measured in a tension mode at 40° C. with an initial load of 148 g, a strain range of 0.1%, and a measurement frequency of 1.6 Hz. Also provided is a method for manufacturing the polishing pad.

Abstract: The present disclosure is directed to a polishing head for polishing a wafer by a slurry. The polishing head includes a main body and at least two air modules. The main body has a cavity for accommodating the wafer, a main channel, and at least two sub-channels connected to the main channel. The at least two air modules are disposed at an outer surface of the main body. Each of the air modules is respectively connected to one of the sub-channels of the main body and configured to generate an air stream. When the polishing head rotates, the air stream forms an air curtain around the outer surface of the main body.

Abstract: The present invention discloses a grinding cavity body of multiple vibration sources, in which a plurality of ultrasonic vibration sources are disposed, capable of controlling the multi-directional macroscopic medium flow, making benefits to the vibration medium (the abrasive of the slurry) to enter the fine structure of the workpiece to be processed, and to the abrasive to vibrate itself slightly to enhance the performance of abrasive to the workpiece which needs to be ground.

Abstract: A bipolar plate is disposed between a positive electrode and a negative electrode of a redox flow battery. The bipolar plate has, in a surface of the bipolar plate facing at least one of the positive electrode and the negative electrode, a plurality of grooves through which an electrolyte flows and a ridge positioned between the adjacent grooves. The bipolar plate includes rough surfaces which are disposed in at least parts of groove inner surfaces defining the respective grooves and surface roughness of which represented by arithmetic mean roughness Ra is 0.1 ?m or larger.

Abstract: The present invention discloses a multi-dimensional vibration grinding cavity body. By adjusting amplitudes (power) and frequencies of the multi-dimensional ultrasonic vibration source, such that the multi-directional macroscopic flow is formed in the cavity body while keeping the vibration medium to have the original characteristics to improve the performance of grinding of slurry.

Abstract: A supporting device and method for a large thin-walled part is disclosed. The supporting device comprises a processing device and a supporting device. A workpiece is positioned between the processing device and the supporting device and is clamped at a periphery in a flexible clamping mode. A cutter in the processing device is connected with an iron core. A coil is wound on the iron core. When the coil is energized, a magnetic field is generated around the coil. A blade part of the cutter is in contact with a processing side of the workpiece. The supporting method combines the magnetorheological fluid technology with the jet supporting technology, and uses a jet impact force to offset part of a milling force. The current magnitude and winding mode of the coil are changed to control magnetic field intensity. The magnetorheological fluid is cured instantly to support the workpiece.

Abstract: The present invention relates to a method for smoothing a surface of a component, in which a component is placed in a liquid-solids mixture; a relative movement is produced between the liquid-solids mixture and the component; thus there is a flow of the liquid-solids mixture along the surface; wherein there is provided in the liquid-solids mixture a guide surface, along which the liquid-solids mixture flows, wherein a directional component toward the surface is imposed on the flow.

Abstract: An apparatus and method is provided for finishing surfaces and edges of a stent. The apparatus may be capable of rotating a turning wheel, lowering the turning wheel onto a stent, tilting the stent, and polishing and deburring exterior, interior, and wall surfaces of the stent. An automated method is provided for polishing and deburring exterior, interior, and wall surfaces of a stent. Additionally, the automated method may include rotating a turning wheel, applying magnetic abrasive particles to the turning wheel, lowering the turning wheel onto the stent, tilting the stent, and polishing and deburring the exterior, interior, and wall surfaces of the stent.

Abstract: The present invention addresses the problem of providing: a polishing pad that is long-lasting, has a high polish rate, and is capable of producing a high degree of flatness on polished articles; and a method for manufacturing the polishing pad. The solution provided is to eliminate a sea component from a non-woven fabric that includes a binder fabric and a sea-island type composite fiber composed of the sea component and an island component, the island component having a diameter of 10-2500 nm, and to add a polymer elastic body to the non-woven fabric.

Abstract: A polishing liquid comprises: abrasive grains; a compound having an aromatic heterocycle; an additive (excluding the compound having an aromatic heterocycle); and water, wherein: the abrasive grains include a hydroxide of a tetravalent metal element; the aromatic heterocycle has an endocyclic nitrogen atom not bound to a hydrogen atom; and a charge of the endocyclic nitrogen atom obtained by using the Merz-Kollman method is ?0.45 or less.

Abstract: Systems and methods are provided for viscous and/or chemically erosive flow machining of work pieces. In certain examples, a tool for flow machining may be disclosed. The tool may include a cavity configured to receive a work piece and one or more inlets and outlets for viscous media flow. Viscous media and/or chemically erosive media can be flowed into the cavity and, via a media flow path, can be used to machine the work piece.

Abstract: The invention provides a method for polishing or planarizing a substrate of at least one of semiconductor, optical and magnetic substrates. The method includes attaching a polymer-polymer composite polishing pad having a polishing layer to a polishing device. A hydrophilic polymeric matrix forms the polishing layer. Cationic fluoropolymer particles having nitrogen-containing end groups are embedded in the polymeric matrix. A slurry containing anionic particles is applied to the polymer-polymer composite polishing pad and rubbed against the substrate to polish or planarize the substrate with the fluoropolymer particles interacting with the anionic particles to increase polishing removal rate.

Abstract: A polishing pad comprising a knitted fabric constituted by warp knitting or weft knitting, and a resin with which the knitted fabric is impregnated, and having a cross section cut in a surface direction of the knitted fabric, as a polishing surface.

Abstract: In the composition according to the embodiment, the content of an unreacted diisocyanate monomer in a urethane-based prepolymer may be controlled to control the physical properties thereof such as gelation time. Thus, since the micropore characteristics, polishing rate, and pad cut rate of a polishing pad obtained by curing the composition according to the embodiment may be controlled, it is possible to efficiently manufacture high-quality semiconductor devices using the polishing pad.

Abstract: The present invention provides a stage driving apparatus for driving a stage, the apparatus comprising: a linear motor including a stator having a plurality of coils arrayed along a driving direction of the stage, and a mover provided with the stage; and a controller configured to control the linear motor, wherein the mover includes a permanent magnet provided on one of an upper side and a lower side of the plurality of coils, and an electromagnet provided on the other, the stator includes a yoke member provided to cover the electromagnet side of the plurality of coils, and the controller controls driving of the stage in the driving direction while floating the mover relative to the stator by controlling energization to the plurality of coils and the electromagnet.

Abstract: A polishing apparatus is a polishing apparatus polishing a target object formed on a surface of a film-shaped substrate. A polishing apparatus includes: a rotatable polishing tool acting on the target object; a slurry nozzle supplying a polishing slurry; and a polishing stage pressing the polishing tool against the target object. A surface of the polishing stage has an unevenness shape.

Abstract: The present invention provides, in polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, means that is capable of improving a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials. The present invention relates to a polishing composition used for polishing an object to be polished that contains an (a) material having silicon-nitrogen bonding and (b) other materials, the polishing composition containing: organic acid-immobilized silica; a dispersing medium; a selection ratio improver that improves a ratio of a polishing speed of the (a) material to a polishing speed of the (b) materials; and an acid, in which the selection ratio improver is organopolysiloxane having a hydrophilic group.

Abstract: To provide modified colloidal silica capable of improving the stability of the polishing speed with time when used as abrasive grains in a polishing composition for polishing a polishing object that contains a material to which charged modified colloidal silica easily adheres, such as a SiN wafer, and to provide a method for producing the modified colloidal silica. Modified colloidal silica, being obtained by modifying raw colloidal silica, wherein the raw colloidal silica has a number distribution ratio of 10% or less of microparticles having a particle size of 40% or less relative to a volume average particle size based on Heywood diameter (equivalent circle diameter) as determined by image analysis using a scanning electron microscope.

Abstract: A method of fabricating layered structure is disclosed. A basal layer is formed. A laminate is formed on the basal layer, and the laminate includes a device layer, a sacrificial layer and a protection layer stacked in sequence. The device layer, the sacrificial layer and the protection layer are etched to obtain a patterned laminate. A first dielectric layer covering a lateral surface of the patterned laminate is formed. Part of the first dielectric layer and part of the protection layer are removed by polishing. The protection layer of the patterned laminate is etched to expose the sacrificial layer. A through hole in the first dielectric layer is formed to expose the basal layer. The sacrificial layer of the patterned laminate is etched to form an opening in the first dielectric layer, and the opening exposes a top surface of the device layer.

Abstract: A system for magnetic abrasive finishing of a workpiece may include a magnetic abrasive brush that may include a plurality of magnetic/abrasive particles and an electromagnet configured to apply a magnetic field on the plurality of magnetic abrasive particles. The system may further include a first actuating mechanism that may be configured to actuate a rotational movement of the workpiece about a longitudinal axis of the workpiece, a second actuating mechanism that may be configured to actuate a linear movement of the magnetic abrasive brush along a first direction relative to the workpiece, the first direction parallel to the longitudinal axis of the workpiece, a sensor coupled to the magnetic abrasive brush that may be configured to measure a working gap between the magnetic abrasive brush and an outer surface of the workpiece at any given instant.

Abstract: The present disclosure provides a device for repairing appearance defects and repair method. The device comprises: a moving platform and at least one repair mechanism, each the repair mechanism comprises at least one sub-repair mechanism, each the sub-repair mechanism comprises a first moving portion, a second moving portion, and a repair portion; the moving platform is configured to support an apparatus to be repaired and move in a first direction to drive the apparatus to be repaired to move in the first direction; the first moving portion is configured to move in a second direction to drive the repair portion to move in the second direction, and the second direction intersects the first direction perpendicularly; the second moving portion is configured to move in a third direction to drive the repair portion to move in the third direction.

Abstract: A cutting element (1) for a tool with an electrically conductive track (6) formed at a surface region. The cutting element (1) comprises a HPHT produced polycrystalline diamond body. The conductive track (6) comprises graphite such that the electrically conductive track (6) has an electrical resistance substantially lower than that of the surface region.

Abstract: In an imprint mold-forming synthetic quartz glass substrate (1) of rectangular shape having dimensions L1 and L2 with L1?L2, a circular region is delineated on the substrate back surface by a circle of radius R with L2?2R?10 mm. When approximation analysis is performed from the 1st to 8th term in the Zernike polynomials on the circular region, a coefficient of the 4th term is equal to or greater than ?(2R/100,000×1) ?m.

Abstract: The present invention provides a polishing method in which the polishing speed of silicon germanium is sufficiently high, the etching of the silicon germanium is suppressed, and the selection ratio of the polishing speed of the silicon germanium is sufficiently high. The present invention relates a polishing method including: polishing an object to be polished containing silicon germanium using a polishing composition, in which the polishing composition contains an abrasive, an inorganic salt, and a polishing accelerator having an acid group, and pH of the polishing composition is 8 or more.

Abstract: Disclosed herein are systems and methods for polishing internal surfaces of apertures in semiconductor processing chamber components. A method includes providing a ceramic article having at least one aperture, the ceramic article being a component for a semiconductor processing chamber. The method further includes polishing the at least one aperture based on flowing an abrasive media through the at least one aperture of the ceramic article, the abrasive media including a polymer base and a plurality of abrasive particles.

Abstract: Embodiments of the present disclosure provide for apparatus used to detect clogs in a fluid delivery system during CMP processes and methods of detecting clogs in a fluid delivery system during CMP processes. In particular, embodiments herein provide a flow splitter manifold configured to enable monitoring of the pressure of the polishing fluid disposed therein. Monitoring the fluid pressure in the flow splitter manifold enables the detection of clogs in the delivery lines and/or dispense nozzles that inhibit and/or prevent the flow of polishing fluid therethrough or therefrom.

Abstract: A hollow spring includes a steel tube in which the average of surface roughness is smaller than 10 ?m across the entire inner surface of the steel tube and/or compressive residual stress is given to the entire inner surface of the steel tube. The hollow spring may be manufactured by a step of polishing the inner surface of the steel tube by flowing a viscoelastic abrasive medium (200) within the tubular member (10), between a first opening (11) and a second opening (12) of the tubular member (10). The abrasive medium (200) may include a viscoelastic base material and a granular abrasive. The inner surface of the steel tube is polished evenly to reduce the surface roughness and/or is given compressive residual stress to increase the fatigue life of the hollow spring.

Abstract: A megasonic cleaner includes a water tank that includes a pair of opposite inner walls and a bottom wall connected thereto, and that accommodates a fluid therein; a plurality of supporting units arranged in the water tank at predetermined positions that support a wafer; and at least one transducer arranged on the bottom wall that transmits energy in the form of waves into the fluid, where each of the opposite inner walls has a first protrusion that protrudes into an internal space of the water tank, the first protrusion being spaced above the bottom wall and positioned at an height that is greater than or equal to a height of the centers of the plurality of supporting units.

Abstract: In debonding a temporarily adhesive-bonded carrier-workpiece pair by a combination of chemical and mechanical methods, solvents or chemicals are used to remove the adhesives primarily through dissolution, and a thin wire, filament, or blade is used to exert a cutting or wedging action between the carrier and workpiece. The two methods are used together during the debonding process. In the carrier-workpiece pair, the workpiece can be a semiconductor wafer that has been thinned and processed. The carrier and the workpiece are temporarily bonded using an adhesive dissolvable in a selected chemical or solvent. The chemical and mechanical debonding (CMDB) method can be carried out in solvent immersion or in solvent spray to provide high throughput debonding. The dissolved adhesives can be recycled and later reused, thus lowering the cost of the whole bonding and debonding process.

Abstract: A paranasal sinus access implant device may include one or more material or geometric features that may enhance performance of one or more portions of the implant device, for example an exposed surface including an antimicrobial agent. Various products and methods may include or use such an implant device.

Abstract: Embodiments relate to a polishing composition including colloidal silica, pulverized wet-process silica particles, and at least one of a nitrogen-containing organic compound and a nitrogen-containing polymer compound. According to another embodiment, the polishing composition includes colloidal silica, pulverized wet-process silica particles, and a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers. According to another embodiment, the polishing composition includes colloidal silica, pulverized wet-process silica particles, a nitrogen-containing organic compound and/or a nitrogen-containing polymer compound, and a copolymer containing a monomer having a carboxylic acid group and a monomer having a sulfonic acid group as essential monomers.

Abstract: The present subject matter relates to a method and an apparatus in the form of a machine system (1200) for machining a component (100) with an internal passage (115). In an aspect, the method comprises periodically injecting 5 abrasive slurry back and forth through the internal passage (115) at a pressure ranging from about 25 bar to about 35 bar. The abrasive slurry comprises a mixture of abrasive particles having a size in the range of about 40 ?m to about 60 ?m, and a slurry medium. The volume fraction of the abrasive particles in the slurry medium is about 40% to about 50%. Further, the injection of the abrasive 10 slurry is performed for a predefined number of process cycles at predetermined time versus pressure changes to obtain the component having a final average surface roughness of less than about 3.0 ?m.

Abstract: Embodiments provide a polishing composition for a magnetic disk substrate containing colloidal silica, a water-soluble polymer, and water. The water-soluble polymer compound is a copolymer containing a monomer having a carboxylic acid group, a monomer having an amide group, and a monomer having a sulfonic acid group as essential monomers. The water-soluble polymer compound has a weight average molecular weight of 1,000 to 1,000,000.

Abstract: Provided are a polishing composition comprising a water-soluble polymer that has a molecular structure comprising a plurality of repeat unit species having different SP values and a polishing composition exhibiting an etching rate and an abrasive adsorption in prescribed ranges when determined by prescribed methods. Also provided is a method for producing a polishing composition, using an abrasive, a basic compound, a water-soluble polymer having an alkaline-hydrolytic functional group, and water. The method comprises a step of obtaining an agent A comprising at least the basic compound and a step of obtaining an agent B comprising at least the water-soluble polymer H.

Abstract: A device for cleaning, for example degritting or desanding, a turbomachine module comprising: (i) structure for isolating bearings of the module, by containment in a closed enclosure; (ii) structure for overpressurizing said enclosure; (iii) means for stripping material deposited in the walls of annular recesses of the module; and (iv) structure for sucking up the material thus stripped.

Abstract: The present invention is a CMP polishing agent, including polishing particles, a protective film-forming agent, and water, wherein the protective film-forming agent is a copolymer of styrene and acrylonitrile, and an average molecular weight of the copolymer is 500 or more and 20000 or less. This provides a polishing agent which can polish an insulation film with few polishing scratches and has high polishing selectivity of an insulation film to a polishing stop film in a CMP step, a method for manufacturing the polishing agent, and a method for polishing a substrate by using the polishing agent.

Abstract: Chemical mechanical polishing (CMP) compositions, methods and systems for polish cobalt or cobalt-containing substrates are provided. Dual, or at least two chelators were used in the CMP polishing compositions as complexing agents for achieving the unique synergetic effects to afford high, tunable Co removal rates and with low static etch rates on Co film surface for the efficient Co corrosion protection during CMP process. The cobalt chemical mechanical polishing compositions also provide very high selectivity of Co film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric film, such as TEOS, SiNx, low-k, and ultra low-k films.

Abstract: A polishing agent for chemomechanically polishing a base having a carbon-based material and an insulating material to remove at least a part of the carbon-based material, the carbon-based material having a carbon content of 60 to 95 atm % as measured by X-ray photoelectron spectroscopy, the polishing agent comprising: an abrasive grain comprising silica; an allylamine-based polymer; and water, wherein a mass ratio of a content of the allylamine-based polymer with respect to a content of the abrasive grain is 0.002 to 0.400, and the abrasive grain has a positive charge in the polishing agent.

Abstract: Described are compositions (e.g., slurries) useful in methods for chemical-mechanical processing (e.g. polishing or planarizing) a surface of a substrate that contains tungsten, the slurries containing abrasive particles, metal cation catalyst, phosphorus-containing zwitterionic compound, and optional ingredients such as oxidizer; also described are methods and substrates used or processed on combination with the compositions.

Abstract: An apparatus (1) for polishing cavities in mechanical components (4), characterized in that said apparatus (1) comprises a supporting framework (2) supporting a working plane (3) thereon are housed the mechanical workpieces (4) to be subjected to the polishing process, said mechanical workpieces (4) being clamped to said working plane (3) by clamping means (5), said apparatus further comprising vibration generating means (6) cooperating with resilient components (7) adapted to transmit a vibration motion and amplify the action of said vibrating means (6), said apparatus (1) comprising furthermore a closed loop distributing system for distributing a mixture (8) containing a polishing and buffing cleansing material and a micro-abrading material, said mixture (8) being fed within said mechanical workpieces (4) together with metal bodies (9) having a ball shape and a different size and mass, adapted to move and stir said mixture (8) against the inner walls of the cavity of said mechanical workpieces (4) being pro