Abstract: Provided is a method for manufacturing a fixed abrasive material suitable for use in CMP planarization pads from an aqueous polymer dispersion that also includes abrasive particles that involves frothing the polymer dispersion, applying the froth to a substrate, mold or carrier and curing the froth to form a fixed abrasive material having an open cell structure containing between about 5 and 85 wt % abrasive particles and a dry density of about 350 kg/m3 to 1200 kg/m3.

Abstract: An article of manufacture and apparatus are provided for planarizing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive surface adapted to polish the substrate and a mounting surface. A plurality of perforations may be formed in the polishing article for flow of material therethrough. In another aspect, a polishing article for polishing a substrate includes a body having a polishing surface and a conductive element disposed therein. The conductive element may have a contact surface that extends beyond a plane defined by the polishing surface. The polishing surface may have one or more pockets formed therein. The conductive element may be disposed in each of the polishing pockets.

Abstract: The present invention comprises a customized polishing pad for use in a wafer polishing machine. The polishing pad of the present invention includes a polishing surface integral with the polishing pad. The polishing surface is adapted to frictionally contact a wafer in the polishing machine, thereby polishing the wafer. The polishing surface of the polishing pad includes at least two areas, where each area is adapted to frictionally contact the wafer and achieve a polishing effect specific for that area. A customized polishing effect is achieved by the polishing pad of the present invention when the wafer is selectively moved frictionally against the at least two areas by the wafer polishing machine.

Abstract: The invention relates to grinding/polishing sheet, which comprises 2 or more annular grinding/polishing zones (1-5) separated by intermediate annular distancing zones (6). One or more of the grinding polishing zones (1-5) comprises one or more non-continuous areas, that are part of an annular structure forming channels (8) in radial direction. The grinding/polishing sheet can be placed on a rotatable grinding/polishing disc for manual, automatic or semiautomatic preparations of materialographic samples. The invention also relates to a method for preparations of materialographic samples.

Abstract: An article or polishing pad for altering a surface of a work piece includes a polymer matrix created by reaction injection molding of size controlled gas bubbles within a polyurethane matrix. The proposed liquid urethane precursor is first injected into an actuated mold and cured. The molded product is then removed from the mold and double side faced or ground to form a single thin polishing pad comprising a single layer of homogeneous material.

Abstract: A dental polishing tip is adapted to be coupled to a dental drive apparatus. The apparatus rotates the tip, thereby polishing the teeth. The tip includes: (i) a post having a proximal end and an opposing distal end, the proximal end being adapted to be coupled to the dental drive apparatus; (ii) an electrostatically flocked polishing head. The electrostatic flocking material on the polishing head at least temporarily increases the retention of the polishing material on the polishing head, thereby deceasing splattering.

Abstract: In one embodiment, a semiconductor substrate (38) is uniformly polished using a polishing pad (16) that has a first polishing region (26), a second polishing region (28), and a third polishing region (30). The semiconductor substrate (38) is aligned to the polishing pad (16), such that the center of the semiconductor substrate (38) overlies the second polishing region (28), and the edge of the semiconductor substrate overlies the first polishing region (26) and the third polishing region (30). During polishing, the semiconductor substrate (38) is not radially oscillated over the surface of the polishing pad, and as a result a more uniform polishing rate is achieved across the semiconductor substrate (38). This allows the semiconductor substrate (38) to be uniformly polished from center to edge, and increases die yield because die located on the semiconductor substrate (38) are not over polished.

Abstract: The present invention describes a method for creating a differential polish rate across a semiconductor wafer. The profile or topography of the semiconductor wafer is determined by locating the high points and low points of the wafer profile. The groove pattern of a polish pad is then adjusted to optimize the polish rate with respect to the particular wafer profile. By increasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be increased in the areas that correspond to the high points of the wafer profile. By decreasing the groove depth, width, and/or density of the groove pattern of the polish pad the polish rate may be decreased in the areas that correspond to the low points of the wafer profile. A combination of these effects may be desirable in order to stabilize the polish rate across the wafer surface in order to improve the planarization of the polishing process.

Abstract: A polisher for polishing a curved surface such as a concave surface of a spectacle lens has a structure in which a polishing pad 3 comprising water passing grooves 5 having a width W of 0.1 to 5 mm is adhered to a dome-shaped elastic base member 2. The polishing pad 3 is composed of a plurality of pads 31, and the water passing grooves 5 are formed at the gaps between the pads 31, whereby the width W of the water passing grooves 5 are made small. It is effective to make the pads 31 polygonal in shape. The polishing pad 3 covers the moving region 6 of the work 8 to be polished. The polishing pad 3 is adhered through a high-tack adhesive layer 4. A polishing method is adopted in which such a polisher 1 is used and the work 8 is polished by pressing the polishing pad 3 against the work 8, whereby the polishing pad 3 adhered to the elastic base member 2 can be prevented from being stripped by an end edge of the work 8, and generation of defective polish can be prevented.

Abstract: A grinding wheel including a circular grinding region (1) with a plurality of through-openings (3) formed therein, a central mounting region (2) coaxial with the grinding region (1), and a plurality of cutting bodies (4) having a rectangular base surface, projecting from the grinding region (1), and spaced from a center of the mounting region (2) by different radial distances, with each cutting body (4) having a longitudinal side (5) adjacent to the center of the mounting region (2) and a wide side (6) remote from the center of the mounting region (2), with the longitudinal side (5) and the wide side (6) forming together an edge (K), and with the longitudinal side (5) extending at an angle (B) of from 35° to 55° to a radial line (R) extending from the center of the mounting region (2) and passing tangentially to the edge (K).

Abstract: An assembly for a chemical-mechanical polishing process includes a platen having an outer edge, a top surface, and at least one inlet for introducing fluid to the top surface; a manifold system, entrenched in the top surface and in communication with the at least one inlet, for channeling the fluid about the top surface; a polishing pad having a top pad surface, and a plurality of fluid delivery through-holes for introducing the fluid from the manifold system to the top pad surface; and a fluid distribution system, entrenched in the top pad surface and in communication with the through-holes, for substantially uniformly distributing the fluid about the top pad surface. The fluid distribution system includes a set of intersecting first grooves defining an array of lands, each of the first grooves having a first cross sectional area.

Abstract: A drywall sanding implement having a shaft, a yoke attached to the shaft, a block pivotably mounted to the yoke, a pair of spindles mounted to the block, and a sanding block removably mounted on each spindle.

Abstract: An objective of the present invention is to provide a polishing pad for a semiconductor wafer and a laminated body for polishing of a semiconductor wafer equipped with the same which can perform optical endpoint detection without lowering the polishing performance as well as methods for polishing of a semiconductor wafer using them. The polishing pad of the invention comprises a water-insoluble matrix material such as crosslinked 1,2-polybutadiene, and a water-soluble particle such as ?-cyclodextrin dispersed in this water-insoluble matrix material, and has a light transmitting properties so that a polishing endpoint can be detected with a light.

Abstract: An object of the present invention is to provide a polishing pad for a semiconductor wafer which can perform a stable polishing while preventing a polishing layer from floating up from a supporting layer and a surface of a polishing pad from bending during polishing using a polishing pad having a multi-layered structure of a polishing layer and a supporting layer, and a polishing process using thereof. The polishing pad of the present invention is characterized in that it is comprising a supporting layer which is a non-porous elastic body and a polishing layer which is laminated on one surface of the supporting layer, and a polishing process using thereof. Shore D hardness of the polishing layer is preferably 35 or more, and hardness of the supporting layer is preferably lower than that of the polishing layer.

Abstract: A method for producing a polishing pad comprising (a) providing a porous polymer structure, (b) compressing at least a region of the porous polymer structure to provide a translucent region, and (c) forming a polishing pad comprising the porous polymer structure, whereby a polishing pad is produced comprising the translucent region. Also provided is a polishing pad produced according to this method, and a polishing pad comprising a region that is at least translucent, wherein the translucent region is porous, as well as a method of polishing a substrate using a pad of the invention.

Abstract: A high quality polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafer, etc. which is not affected by the change of polishing conditions during polishing and can attain excellent removal rate, capacity of step height reduction and uniformity is described, wherein a polyurethane-based foam 12 having fine and uniform cells 20 suitable for polishing of semiconductor material, etc. obtained by reaction-injection molding a gas-dissolved raw material prepared by dissolving an inert gas in a mixture of a polyurethane or polyurea as a main raw material and various subsidiary raw materials under pressure is used.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

Abstract: An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing, pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad also exhibits a stable morphology that can be reproduced easily and consistently. The pad surface has macro-texture that includes perforations as well as surface groove designs The surface groove designs have specific relationships between groove depth and overall pad thickness and groove.area and land area.

Abstract: Disclosed is a chemical mechanical polishing pad formed at a polishing surface thereof with a plurality of concentric wave-shaped grooves having different radiuses while having the same shape. Each groove has a desired depth, width, and shape. The chemical mechanical polishing pad provides effects of effectively controlling a flow of slurry during a polishing process, thereby achieving a stability in the polishing process in terms of a polishing rate, and achieving an enhancement in the planarization of a wafer.

Abstract: Sintered metal bonded segments with an abrasive action, and containing particles of hard material, for tools for machining or cutting hard and/or brittle materials with a tool support which accommodates the sintered metal bonded segments, which are made up of individual segment modules.

Abstract: The present invention provides a superabrasive tools and methods for making the same. In one aspect, superabrasive particles are chemically bonded to a matrix support material according to a predetermined pattern by a braze alloy that contains Cr, Mn, Si, or Al or mixtures thereof.

Abstract: Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished.

Abstract: A polishing pad for use in chemical mechanical polishing of a semiconductor substrate is described. The polishing pad comprises a substantially flat disk having a polishing surface for contacting the substrate. The polishing surface, which has a central region and a peripheral region, is segmented by a set of substantially parallel linear grooves. The grooves include central grooves which traverse the central region of the polishing surface, and peripheral grooves which traverse the peripheral region of the polishing surface. The central grooves have central groove dimensions, including a central groove width and pitch. The peripheral grooves have peripheral groove dimensions, including a peripheral groove width and pitch. At least one of the central groove dimensions, i.e. the width or the pitch, is different from the corresponding peripheral groove dimension.

Abstract: An apparatus that mass polishes a variety of fiber optic cable connectors simultaneously. The apparatus includes a plurality of polishing plates, each capable of holding its own polishing film and pad, and having a varying height. The apparatus further includes a plurality of connector fixtures that may receive a variety of connectors at varying angles. Each connector fixture communicates with a corresponding polishing pad. Thus, fiber optic cable connectors having a variety of polished end faces may be provided with the apparatus. The apparatus also eliminates the potential for contamination among polishing films, reduces polishing steps, and saves labor and maintenance costs.

Abstract: An abrasive article that includes a fixed abrasive element having a plurality of abrasive particles, a resilient element, and a plurality of rigid segments disposed between the fixed abrasive element and the resilient element.

Abstract: A method for optimizing the planarizing length of a polishing pad is disclosed that includes forming a substantially constant network of islands and trenches into a first side of a polishing pad. The trenches are formed to a pre-determined distance apart. The polishing pad is fit to a chemical-mechanical polishing system. A surface layer of a semiconductor wafer is planarized with the first side of the polishing pad. Upon completion of the polishing process, the planarized wafer surface layer is observed. If the wafer surface layer is planarized to an amount outside of a set target polishing range, the distance between the trenches on the first side of the polishing pad is uniformly decreased. The above steps are repeated until the wafer surface layer is planarized to an amount within the set target polishing range.

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows: [[V1−Vs]/Aas]/{square root over (A)}uc>5 where V1 is the volume defined by the area of the unit cell and the height of the structure of the unit cell, Vs is the volume of the structure of the unit cell, Aas is the apparent contact area of the structure of the unit cell, and Auc is the area of the unit cell, and b) moving at least one of the wafer and the article relative to each other in the presence of a polishing composition that is chemically reactive with a surface of the wafer and capable of either enhancing or inhibiting the rate of removal of at least a portion of the surface of the wafer.

Abstract: Foam for making pads and belts with controlled, reproducible microcellular structure and method of making such foam in a fast and efficient manner. Under constant pressure and temperature, a prepolymer is mixed with the nucleation surfactant in a tank in the presence of a frothing agent metered into the tank by way of a dip tube or sparge. The nitrogen gas is sheared into small bubbles and is drawn off from the headspace of the tank creating a continuous flow of nitrogen. The pressure of the tank may vary from any absolute pressure down to near complete vacuum, thereby all but eliminating the pressure requirement. The froth of the present invention has a more consistent cell structure and increased cell count.

Abstract: A CMP polishing pad improves overall material removal rate uniformity by combining multiple polishing pad sections in a serially linked manner, where the polishing pad sections are characterized by at least two different material removal rate profiles. The polishing pad is designed by determining a wafer polishing profile for each of a group of polishing pads where each polishing pad has a unique groove configuration, determining a combination of polishing pad segments, each of the segments constructed with one of the unique groove configurations, that will combine to achieve an improved uniformity in the polishing profile, and manufacturing a polishing pad having pad sections corresponding to the analytically determined pad sections.

Abstract: A sanding disc particularly useful for smoothing drywall. The sanding disc includes a circular abrasive disc having an abrasive surface, and a circular foam disc smaller in diameter than the abrasive disc which is co-axially adhered to the surface of the abrasive disc opposite its abrasive surface. The abrasive disc has a circular central portion along which the surface defined by the abrasive is generally planar, and has an annular peripheral portion extending from its central portion to its peripheral surface along which its surface defined by the abrasive is generally cylindrically convex to position the peripheral surface of the abrasive disc in a plane passing through the foam disc.

Abstract: A flap disc consists of a backing plate to whose peripheral zone laminae overlapping like a fan or roof tiles are attached. In order to improve the abrasive effect of such a flap disc using less material and simpler production, the lamellae 10 consist of first lamellae 12, comprising a backing 14, a base bonding coat 15 applied to the backing, a layer of abrasive grain 16 deposited over the base bonding coat 15, and a size coat 18 over the layer of deposited abrasive grain 16, and second lamellae 20, consisting of a backing 22 and a layer 24 with grinding active fillers applied to the backing.

Abstract: A method of joining sections of polishing pad for use in the chemical mechanical planarization of a semiconductor wafer. Two sections of polishing pad are positioned so that they contact one another. The two sections are then welded together to create a robust joint. The joint is resistant to infiltration of slurry and is not susceptible to delamination that commonly occurs in a typical laminate joint.

Abstract: The present invention provides a composite polishing pad, comprising. In an advantageous embodiment, the composite polishing pad includes a polishing pad member comprising a material having a predetermined hardness and an annular support member underlying a periphery of the polishing pad member, the annular support member having a hardness less than the predetermined hardness of the polishing pad member.

Abstract: The present invention gives a method of fabricating a composite polishing pad. A first polishing pad has a glue layer on a surface of the first polishing pad and a number of hard polishing materials positioned on the glue layer. Then portions of the first polishing pad are punched off to remove portions of the hard polishing material positioned on the surface of the first polishing pad so as to form holes penetrating the first polishing pad. A second polishing pad has a glue layer on a surface of the second polishing pad, and soft polishing materials adhere to the glue layer. Then portions of the soft polishing material positioned on the surface of the second polishing pad are removed while retaining the glue layer, and the portions of the soft polishing material retained on the surface of the second polishing pad completely match the holes formed in the first polishing pad.

Abstract: The present invention provides an apparatus for performing mechanical polishing of a semiconductor wafer surface that includes a polishing pad, a wafer support, and a motor. The polishing pad includes a polishing face, an abrasive first member, and means for impeding abrasion of the surface by the first member. The wafer support includes a support surface, and is disposed opposite to the pad. The motor operatively engages at least one of the polishing pad and the wafer support.

Abstract: A composite polishing pad for use in a linear chemical-mechanical polishing apparatus is provided. The pad comprises a hard polishing pad having a polishing surface and an attachment surface opposite the polishing surface, the attachment surface comprising a border comprising an adhesive, the border surrounding a cavity, the cavity being sized and shaped to receive a soft polishing pad. The soft polishing pad is disposed completely in the cavity and completely fills the cavity, and the soft polishing pad has a first side adhered in the cavity of the hard polishing pad, and a second side comprising an adhesive, whereby the attachment surface of the hard polishing pad and the second side of the soft polishing pad are substantially in a common plane. Other composite polishing pads are also provided, as are methods for making composite pads and methods for preventing composite pads from splitting apart into their component pads.

Abstract: The present invention provides a polishing pad for polishing a surface that includes a first member having a structurally degradable abrasive first material, and a surface abrasion impeding second member having a second material, wherein the first member and the second member are comprised of a common matrix material.

Abstract: A chemical-mechanical polishing (CMP) pad conditioner. The conditioner has a non-uniform conditioning surface with a plurality of conditioning elements. The non-uniform surface comprises a first section having a first cutting volume per unit width and a second section having a second cutting volume per unit width that is different from the first cutting volume per unit width. The difference in cutting volume may be provided by different projected widths of the individual conditioning elements, by a difference in the linear density between the two sections, or by a difference in the cutting depth. A CMP tool comprising a polishing pad, a conditioning pad having the disclosed structure, and a mechanism for moving the polishing pad relative to the pad conditioner is also provided. A method is further provided for uniformly conditioning a CMP pad using a conditioner having the structure described.

Abstract: A tool and method are provided for the abrasive machining of a substantially planar surface. The tool has a base body and a plurality of elements which are mounted on the base body and form a planar coating which is used as a working coating during machining of the surface.

Abstract: The present invention provides a method of limiting mechanical abrasion, that includes polishing a surface with a pad having a first member defining a first polishing surface and comprising a first material, and limiting abrasion of the surface with a surface abrasion impeding second member, the second member defining a second polishing surface and comprising a second material.

Abstract: An abrasive pad and a polishing method advantageously applicable to wafers for the production of semiconductor devices are disclosed. The abrasive pad includes a pad body capable of spinning for polishing a wafer pressed against the pad body. A number of grooves are formed in the surface of the pad body, so that slurry can flow therein. The grooves intersect each other to form a number of projections aligning in the horizontal and vertical directions and each having a polygonal shape, as seen in a plan view. One of the projections faces each groove in the lengthwise direction of the groove. This configuration enhances uniform polishing and high speed, high pressure polishing while promoting efficient use of the slurry.

Abstract: A multi-grit manual finishing tool and method for making the tool. In a preferred embodiment, the tool comprises an ordered, linear sequence of pieces of coated abrasive connected by fully pliable hinges. The hinges allow virtually 360° rotation of the planes of adjacent pieces about each other, and permit the tool to accordion-fold together tightly, so that the tool becomes very compact for storage, transit and special uses. The grit sizes progressively increase from one abrasive piece to the next, thereby facilitating a choice of grit sizes within a single tool. On the non-grit surface of each piece is a distinctive labeling addition that includes indicia characterizing the grit size and abrasive nature of its corresponding grit surface. The distinctive labeling addition includes mechanical reinforcement, such as plastic, thin metal or cardboard. Each piece may abrade a work piece individually and without necessarily using any tool other than hand or fingers.

Abstract: The present invention provides a polishing pad for polishing a surface that includes a first member having a structurally degradable abrasive first material, and a surface abrasion impeding second member having a second material that is less degradable and less abrasive than the first material.

Abstract: A flexible, open-pored cleaning body having at least one scouring surface (2) provided in at least one subregion with continuously formed, raised projecting ridges (3), wherein the ridges (3) have regions C,D of different heights in the direction of their extension.

Abstract: Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished.

Abstract: A polishing pad for use with a polishing fluid has, a polishing layer, a window in an opening through the polishing layer, and a fluid impermeable layer spanning across the polishing layer and the window and the opening to provide an uninterrupted continuous barrier to leakage of polishing fluid, the fluid impermeable layer having thereon an adhesive forming bond seals with the polishing layer and the window.

Abstract: An object of the present invention is to provide a polishing pad capable of obtaining the stabilized polishing performance and a method for manufacturing the same.

Abstract: Apparatuses and methods are disclosed using a fixed abrasive polishing pad to perform mechanical polishing of a surface. The apparatus includes a polishing pad positioned opposing a wafer support to provide for polishing of a surface of a wafer placed on the support. The polishing pad includes a first member having a first polishing surface formed from an abrasive first material that is structurally degradable during polishing. The polishing pad also includes a second member having a second polishing surface formed from a second material that is less degradable and less abrasive relative to said first material. The first and second polishing surfaces define a polishing face that is brought into contact with the surface to be polished.

Abstract: A patterned polishing pad adapted for use in a wafer polishing machine. The patterned polishing pad has a polishing surface adapted to contact frictionally a semiconductor wafer being polished in a chemical mechanical polishing machine. The polishing surface has a first region and a second region. The first region is adapted to contact frictionally the wafer and achieve a first process effect. The second region is adapted to contact frictionally the wafer and achieve a second process effect. The surface of the second region extends a predetermined protrusion amount above the polishing surface with respect to the surface of the first region.

Abstract: A polishing pad comprising: a base from which extends multiple posts having top surfaces that collectively provide a polishing surface on the polishing pad, and each of the top surfaces being recessed with an opening to provide a second cutting edge on the post, and the opening providing a reservoir for polishing fluid.