Abstract: A clamping device for holding a workpiece, in particular a cutting tool, during machining in a grinding machine, wherein peripheral grinding of the workpiece is performed by means of a particularly approximately cup-shaped grinding wheel, wherein the clamping device comprises a support unit provided to be mounted on the grinding machine, a clamping unit comprising a clamping anvil supported in a clamping anvil holding element and translationally drivable to apply a clamping force parallel to a clamping axis, and a drive unit comprising a drive anvil supported in a drive axis and rotationally drivable for rotary orientating the workpiece by means of the drive axis. The clamping unit and the drive unit are provided as individual components, which are releasably or slidably attached to the support unit to form a workpiece spindle headstock of the grinding machine.

Abstract: An apparatus for manufacturing a display device includes a moving part including a belt that circulates, a roller that circulates the belt, and at least one meandering prevention portion that moves in a first direction parallel to a direction of a rotation shaft of the roller and prevents meandering of the belt, and a polishing head disposed corresponding to the moving part, the polishing head polishing a surface of a base material disposed on a first surface of the belt. A part of the at least one meandering prevention portion faces a second surface of the belt, the second surface being a side surface of the belt.

Abstract: An etchant composition includes an inorganic acid, a siloxane compound, an ammonium compound, and a solvent, wherein the siloxane compound is represented by General Formula (I): A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.

Abstract: A SiC wafer is produced from a single crystal SiC ingot. A modified layer is formed by setting a focal point of a pulsed laser beam inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced. The pulsed laser beam is applied to the ingot while moving the ingot in a first direction perpendicular to a second direction where an off angle is formed, thereby forming a modified layer in the first direction inside the ingot and cracks propagating from the modified layer along a c-plane. A separation surface is formed by indexing the ingot in the second direction and applying the laser beam plural times to thereby form a separation surface inside the ingot. Part of the ingot is separated along the separation surface to thereby produce the wafer.

Abstract: A final polishing method using a polishing agent that contains colloidal silica, ammonia, and hydroxyethyl cellulose in which the colloidal silica has a primary particle size of 20 nm or more and less than 30 nm, the hydroxyethyl cellulose has a weight average molecular weight of 400,000 to 700,000, and the polishing agent satisfies 1.5?D1/D2?2.5 where D1 is a particle size having a cumulative volume percentage of 95% of particles contained in the polishing agent, and D2 is a particle size having a cumulative volume percentage of 95% of the colloidal silica in case of dispersing the colloidal silica in water with a concentration identical to a colloidal silica concentration in the polishing agent, and using a polishing pad that exhibits a contact angle of 60° or more 100 seconds after dropping pure water to the polishing pad that has been subjected to seasoning and then dried.

Abstract: The present invention provides a liquid crystal display device with reduced power consumption as well as reduced flicker. The liquid crystal display device is one in a transverse electric field mode, including: paired substrates; a photo-alignment film disposed on at least one of the substrates; a horizontal alignment liquid crystal layer disposed between the substrates; and pixels arranged in a matrix form, the liquid crystal layer containing liquid crystal molecules with a bicyclohexyl skeleton and liquid crystal molecules with a difluorobenzene skeleton, the liquid crystal layer having negative anisotropy of dielectric constant, one of the substrates including TFTs disposed in the respective pixels, the TFTs each including a semiconductor layer that contains an oxide semiconductor, the liquid crystal display device having a frame rate of lower than 50 Hz.

Abstract: A wet sanding adjuvant is comprised of a composition comprising: (1) an alkali metal or ammonium salt of an alkoxylated alkyl sulfate; (2) an alkali metal or ammonium salt of an alphaolefin sulfonate; (3) a cellulose derivative selected from the group consisting of hydroxyalkyl cellulose, a carboxyalkyl cellulose and combinations thereof. The adjuvant is used in a method of removing a coating from a surface comprising the steps of: (1) contacting a coated surface with a composition according to the invention to form a wet surface on the coating; (2) abrading the wet surface with an abrasive; (3) removing the composition from the surface.

Abstract: A continuous fastener element including: a coupling head; upper and lower leg portions; and a connecting portion wherein surfaces of the coupling head, the leg portions, and the connecting portion are each formed as a rough surface with a plurality of recesses. Furthermore, a head surface of the coupling head of the continuous fastener element is formed to have an average roughness Ra smaller than that of outer peripheral surfaces of the leg portions. Accordingly, gloss and luster of the continuous fastener element may be easily reduced or removed. Furthermore, when the slide fastener is formed, the resistance between the coupling heads of the left and right continuous fastener elements may be made small and the left and right element rows may smoothly engage with each other or disengage from each other.

Abstract: A cleaning agent for an alloy material is provided. The cleaning agent has a pH in a range between 1.5 and 4, inclusive, and contains an anionic surfactant having an SO3M group (where M represents a counter ion). It is preferable that the cleaning agent for an alloy material further contains an organic acid. A method for producing an alloy material is also provided. The method includes a step for cleaning the alloy material using the cleaning agent for an alloy material.

Abstract: An apparatus includes: a cleaver configured to automatically cleave a bare fiber extending from an end face of a terminus or connector of a fiber optic cable, the cleaver including a bending element configured to bend the bare fiber and a defect-formation device configured to create a surface defect in surface of the bare fiber under tension when the bare fiber is bent by the bending element; and an abrader configured to automatically finish the end face of the terminus or connector after the bare fiber is cleaved.

Abstract: Methods of treating the polymeric surfaces of a stent with a fluid including a solvent for the surface polymer are disclosed.

Abstract: A device wafer includes a device area where a plurality of devices are formed on the front side of the device wafer and a peripheral marginal area surrounding the device area. Each device has an adhesion disliking region disliking adhesion to an adhesive tape. An ultraviolet curable protective tape is attached as the adhesive tape to the front side of the device wafer. Ultraviolet radiation is applied to a first area of the protective tape corresponding to the adhesion disliking region of the device wafer to thereby reduce the adhesive force in the first area. The ultraviolet radiation is not applied to a second area of the protective tape corresponding to the peripheral marginal area of the device wafer to thereby maintain the adhesive force in the second area. The device wafer is held through the protective tape while the back side of the device wafer is ground.

Abstract: A method of converting a tire into cladding components includes removing a first sidewall and a second sidewall of the tire from a tread ring of the tire. The first sidewall and the second sidewall are cut radially forming a plurality of shingles. The tread ring is cut transversely forming a plurality of mounting struts. A method of manufacturing a cladding includes fastening at least two mounting struts to a structure. A plurality of interior-facing shingles are fastened to the structure in a mounting groove formed by the at least two mounting struts. A plurality of exterior-facing shingles are fastened to the structure through the at least two mounting struts.

Abstract: The present invention relates to a rubbing device and a rubbing method. The rubbing device includes: a substrate carrier, an aligning roller having a surface that is rubbing fabric, a driving mechanism that drives the substrate carrier and the substrate that is to be subjected to alignment treatment carried thereby to undergo a translational movement, and an elevation arm. The lower surface of the aligning roller is made suitable to contact and rub the upper surface of the substrate that is to be subjected to alignment treatment and side edges of the upper surface of the substrate that is to be subjected to alignment treatment are made suitable to scrape the lower surface of the aligning roller. The substrate carrier is provided in a top thereof with channels corresponding to two opposite side edges of the substrate that is to be subjected to alignment treatment in the translational movement direction.

Abstract: A method for cooling a cylindrical workpiece during wire sawing includes applying a liquid coolant to a surface of the workpiece. The workpiece is made of semiconductor material having a surface including two end faces and a lateral face. The method includes sawing the workpiece with a wire saw including a wire web having wire sections arranged in parallel by penetrating the wire sections into the workpiece by an oppositely directed relative movement of the wire sections and the workpiece. Wipers are disposed so as to bear on the surface of the workpiece. The temperature of the workpiece is controlled during the wire sawing using a liquid coolant applied onto the workpiece above the wipers so as to remove the liquid coolant with the wipers bearing on the workpiece surface.

Abstract: A method of grinding a semiconductor nanocrystal-polymer composite, the method including obtaining a semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal and a first polymer, contacting the semiconductor nanocrystal-polymer composite with an inert organic solvent; and grinding the semiconductor nanocrystal-polymer composite in the presence of the inert organic solvent to grind the semiconductor nanocrystal-polymer composite.

Abstract: The present invention relates to a hydrophobic or oleophobic microporous polymer membrane having a structurally induced drip-off effect, to methods for producing the membrane according to the invention, to the use of the membrane in the sterile filtration of gaseous fluids, and to the use of the membrane as a liquid barrier in liquid-containing systems to be vented.

Abstract: The invention relates to a v-ribbed belt (10) manufactured in a molding or grinding process, comprising a plurality of ribs (1) for engaging a multi-groove belt pulley (4), which in different areas of the structure thereof can comprise different elastomer materials. In two rib segments 8, 9), v-ribbed belt has differing elastomer materials that are exposed toward the flank (6) of the rib (1), wherein the upper rib segments (8) oriented toward the belt pulley are made of an elastomer material that essentially is not electrically conductive. The lower rib segments (9) are made of an electrically conductive elastomer material. The height ratio a/(a+b) of the height (a) of the lower rib segments (9) to the overall height (a+b) of the rib (1), as measured at the material boundary (12) located at the rib flank (6), is at least 6 percent, or the absolute height (a) of the lower rib segments (9) is at least 0.12 mm. The invention further relates to a method for producing a v-ribbed belt according to the invention.

Abstract: The disclosed embodiments relate generally to methods for creating smooth cosmetic surfaces along small features of an electronic device. The disclosed embodiments are well suited for reaching surfaces disposed in constrained spaces. More specifically a method for finishing a workpiece is described. For example, the method may be employed to finish an inlet portion of a cable connector. The method may involve the use of an abrasive brush which may include a single filament and abrasive particles coupled thereto, which can be configured to provide any number of different surface geometries during a finishing operation.

Abstract: A wet sanding adjuvant is comprised of a composition comprising: (1) an alkali metal or ammonium salt of an alkoxylated alkyl sulfate; (2) an alkali metal or ammonium salt of an alphaolefin sulfonate; (3) a cellulose derivative selected from the group consisting of hydroxyalkyl cellulose, a carboxyalkyl cellulose and combinations thereof. The adjuvant is used in a method of removing a coating from a surface comprising the steps of: (1) contacting a coated surface with a composition according to the invention to form a wet surface on the coating; (2) abrading the wet surface with an abrasive; (3) removing the composition from the surface.

Abstract: A method of transporting a semiconductor wafer having a ring-shaped stiffening portion can include the steps of pressing the semiconductor wafer from the back surface side to the front surface side thereof on a place different from a place at which the semiconductor wafer is to be held, the step of pressing the semiconductor wafer being conducted before holding the semiconductor wafer having the ring-shaped stiffening portion. The method can include releasing the attachment by suction of the front surface of the semiconductor wafer by supplying a positive pressure onto the chuck table, releasing pressing the semiconductor wafer from the back surface side to the front surface side thereof on the place different from the place at which the semiconductor wafer is to be held and picking up the semiconductor wafer having the ring-shaped stiffening portion from the chuck table while holding the semiconductor wafer.

Abstract: A substrate capable of achieving a lowered probability of defects produced in a step of forming an epitaxial film or a semiconductor element, a semiconductor device including the substrate, and a method of manufacturing a semiconductor device are provided. A substrate is a substrate having a front surface and a back surface, in which at least a part of the front surface is composed of single crystal silicon carbide, the substrate having an average value of surface roughness Ra at the front surface not greater than 0.5 nm, a standard deviation ? of that surface roughness Ra not greater than 0.2 nm, an average value of surface roughness Ra at the back surface not smaller than 0.3 nm and not greater than 10 nm, standard deviation ? of that surface roughness Ra not greater than 3 nm, and a diameter D of the front surface not smaller than 110 mm.

Abstract: A blade processing (e.g., sharpening) device includes two sets of overlapping edge processing rings. Inner diameter surfaces of the edge processing rings define a notch suitable for effectively processing a blade with a convex cutting edge profile. Certain types of edge processing rings are movable relative to one another to adjust an edge processing angle of the notch. Certain types of blade processing devices also can also process blades with concave cutting edge profiles. The rings may be contained at least partially within a protective housing. A blade can be processed by inserting a blade through a blade insertion opening in the housing and into the notch while a handle of the blade remains outside the housing. By grasping the handle, the blade can be manually reciprocated within the notch during edge processing.

Abstract: A system according to one embodiment includes a substrate having one or more sacrificial row bars and one or more additional row bars, wherein the one or more sacrificial row bars comprise a wear resistant material and are adapted to be used in a lapping process to prepare a lapping plate, wherein the one or more additional row bars comprise a material that has less wear resistance than the wear resistant material and are adapted to be used for magnetic head slider production, and wherein the lapping plate is adapted to be used in a lapping process to polish the one or more additional row bars.

Abstract: An object of the invention is to effectively remove particles on the glass substrate surfaces, even in the case wherein abrasive particles having a small particle size is used in the polishing step of the glass substrate and a supersonic treatment is performed at a high frequency at the supersonic cleaning step after the polishing step. In a manufacturing method of a glass substrate for a magnetic disk comprising a polishing step for performing polishing of the glass substrate and a supersonic cleaning step for performing supersonic cleaning of the glass substrate after the polishing step, the polishing step uses abrasive particles having a particle size of 10 nm to 30 nm and a first supersonic cleaning is performed at a frequency of 300 kHz to 1,000 kHz to form secondary particles and then a second supersonic cleaning is performed at a frequency of 30 kHz to 100 kHz in the supersonic cleaning step.

Abstract: The described embodiment relates generally to the polishing of a device housing. The device housing can be formed of a thermoplastic, or a metal such as aluminum or stainless steel. More particularly, a method and an apparatus are described for accurately measuring the amount of material removed during a polishing process. Accurate measurement of such a polishing process can be especially helpful in measuring material removal on curved surfaces and edges where material removal rates tend to be less predictable.

Abstract: Methods of treating the polymeric surfaces of a stent with a fluid including a solvent for the surface polymer are disclosed.

Abstract: An apparatus for processing a substrate is disclosed. The apparatus includes a polishing section configured to polish a substrate, a transfer mechanism configured to transfer the substrate, and a cleaning section configured to clean and dry the polished substrate. The cleaning section has plural cleaning lines for cleaning plural substrates. The plural cleaning lines have plural cleaning modules and plural transfer robots for transferring the substrates.

Abstract: A milling and grinding device, for machining a workpiece, includes a rack, a positioning tool, a spindle, a tool magazine, a milling cutter, a grinding wheel, and a controller. The rack defines a receiving chamber, and includes a workstation at a bottom of receiving chamber. The positioning tool is mounted on the workstation to position the workpiece. The milling cutter and the grinding wheel are received in the tool magazine. The milling cutter is capable of milling the workpiece to form a hole. The grinding wheel is capable of grinding the hole of the workpiece. The controller is mounted on the rack, and capable of controlling the spindle to receive the milling cutter or the grinding wheel from the tool magazine, to mill or grind the workpiece. The tool setting gauge is mounted on the workstation, and capable of sharpening the grinding wheel in a different grinding precision.

Abstract: A cleaning device for cleaning a substrate is provided. In one aspect, the cleaning device includes a brush including a first end, a second end opposed to the first end, an outer surface, and a hollow bore defined in the brush about a central axis of the brush. The brush defines a first cross-sectional area near the first end and a second cross-sectional area near the second end. Both the first and second cross-sectional areas are generally perpendicular to the central axis and the second cross-sectional area is greater than the first cross-sectional area.

Abstract: A method of manufacturing a head chip includes a groove forming step for forming grooves which are the bases of ejection grooves on a first surface of the actuator substrate, a substrate grinding step for grinding a second surface of the actuator substrate so that each of the grooves has a predetermined depth, a recessed portion forming step for forming an inspection recessed portion which changes its state in the second surface of the actuator substrate according to the grinding amount of the actuator substrate in the substrate grinding step, and a grinding amount determination step for determining the grinding amount of the actuator substrate on the basis of a state of the inspection recessed portion after the substrate grinding step.

Abstract: A backlight module for a liquid crystal display and a method for manufacturing a heat dissipation part of the backlight module. The method includes the steps of: preparing a hollow pipe (20), wherein the hollow pipe (20) has a hollow structure, the section of the hollow pipe (20) in a transverse direction is a “” shape, and the hollow pipe (20) comprises a first bearing part (211), a second bearing part (212), a first vertical part (221) and a second vertical part (222); and cutting the hollow pipe (20), wherein the first vertical part and the second vertical part are respectively cut in a vertical direction to cut the hollow pipe into two heat dissipation parts, a heat dissipation part is formed by the first bearing part (211) and the first vertical part (221), and the other dissipation part is formed by the second bearing part (212) and the second vertical part (222). According to the method, the production cost can be reduced and the product can be thinned and lightened.

Abstract: An example component machining method includes immersing a surface of a component within a fluid during a machining process. The method heats the surface during the machining to vary the machining process at the surface relative to other surfaces of the component.

Abstract: In a wafer processing method, an ingot is sliced into a wafer and the wafer is planarized by polishing a surface of the wafer. When the wafer is planarized, the wafer is disposed on a wafer holder and the wafer is rotated, a heat quantity is applied to a portion of the wafer so as to form a reformed layer at the portion of the wafer, and a polishing tool is brought into contact with the portion of wafer while rotating so as to polish the portion of the wafer.

Abstract: A wafer carrier adapted to further reduce the edge effect and allow a wafer to be uniformly polished across its entire surface, with a retaining ring made from very hard materials such as PEEK, PET or polycarbonate with a hardness in the range of 80 to 85 Shore D, while the inner surface or insert is made of polyurethane or other material with a hardness in the range of 85 to 95 Shore A.

Abstract: A method includes receiving a carrier with a release layer formed thereon. A first adhesive layer is formed on a wafer. A second adhesive layer is formed over the first adhesive layer or over the release layer. The carrier and the wafer are bonded with the release layer, the first adhesive layer, and the second adhesive layer in between the carrier and the wafer.

Abstract: A grinder including a grinding unit including a grinding surface and a shaft connected to the grinding unit for rotating the grinding unit. The grinding unit includes polyurethane and a mixture of a repairer and an abrasive, and an angle ? between a plane perpendicular to a rotational axis of the shaft and the grinding surface satisfies 1°???7°.

Abstract: Wafer processing methods are provided. The methods may include cutting respective edges of a wafer and an adhesive a predetermined angle before grinding a back surface of the wafer.

Abstract: A system, including an electrostatic spray system, including an electrostatic tool configured to spray a material with an electrostatic charge, and a target with a surface finish greater than or equal to a number 4 mirror finish configured to receive a material sprayed by the electrostatic tool.

Abstract: A method for manufacturing a semiconductor device includes the step of polishing a conductive film formed over a semiconductor substrate. The conductive film is formed by a barrier film that is in contact with second and third interlayer insulating films, and a copper film that is in contact with the barrier film. A polishing surface of a second polishing pad for polishing and removing the barrier film and the third interlayer insulating film has a lower pore area ratio than a polishing surface of a first polishing pad for polishing and removing the copper film.

Abstract: A method of post processing a laser peened component to remove a laser remelt layer is proposed. The post processing includes a series of steps including grit blasting, chemical etching and mechanical finishing the component. This will ensure that the mechanical property (i.e., damage tolerance) benefit of laser peening is restored to the surface of the component.

Abstract: A machining method comprises selecting a finished surface dimension and a material property for a working surface, defining a working temperature range based on the selected material property, and defining a machining power based on the working temperature range. The machining power depends on a removal rate and a specific heat of the working surface. The working surface is machined at the removal rate to achieve the finished surface dimension, and the machine power is controlled to maintain the working surface within the working temperature range. The working surface is heated or cooled from the working temperature range to a transition temperature range, such that the selected material property is preserved in the working surface.

Abstract: For complex CMP processes requiring the removal of different dielectric materials, possibly in the presence of a polysilicon material, a slurry material may be adapted at the point of use by selecting an appropriate pH value and avoiding agglomeration of the abrasive particles. The in situ preparation of the slurry material may also enable a highly dynamic adaptation of the removal conditions, for instance when exposing the polysilicon material of gate electrode structures in replacement gate approaches.

Abstract: An example component machining method includes immersing a surface of a component within a fluid during a machining process. The method heats the surface during the machining to vary the machining process at the surface relative to other surfaces of the component.

Abstract: A surgical instrument comprising a symbol formed in or on a smooth surface surrounding the symbol, wherein the symbol comprises a plurality of angled surfaces over at least part of the area of the symbol, wherein the angled surfaces define a plurality of parallel ridges and grooves in the symbol. These ridges and grooves create an improved contrast for the symbol relative to the surrounding surface by a combination of different specular reflection of incident light compared to the surrounding surface and shadows formed by the ridges and grooves. A method of marking a surgical instrument with a symbol formed in or on a smooth surface is also described. The method comprises forming a symbol in or on a smooth surface of the surgical instrument; and forming a plurality of angled surfaces over at least part of the area of the symbol, wherein the angled surfaces define a plurality of parallel ridges and grooves in the symbol.

Abstract: Plastic restoration kits and methods for restoring the light transmission and optical clarity properties of plastic surfaces, such as plastic aircraft windows, automobile plastic headlight covers, plastic sunglass lenses, and plastic corrective optical lenses. The kits and methods restore plastic surfaces that have been damaged by hazing, scratching and/or UV-induced oxidation. The kits and methods employ at least one polishing composition configured to improve clarity by removing scratches. A UV protective material is incorporated into at least one of the polishing compositions so that the UV protective material becomes worked into the plastic surface during polishing, and a protective coating that forms a hard protective coating over the plastic surface impregnated with the UV protective material is finally applied. The plastic surface may be heated after polishing and prior to application of the protective coating material.

Abstract: A seal assembly, adapted to seal a joint having a first member pivotable about a rotational axis relative to a second member thereof, includes first and second annular seal rings and first and second annular load rings. The first and second seal rings each has a loading surface, extending axially, and a sealing face, extending radially to an outer perimeter. Each sealing face has a sealing band disposed adjacent the outer perimeter. The first and second seal rings abut one another such that the sealing bands of the first and second seal rings are in contacting relationship with each other. The first and second load rings engage the loading surface of the first and second seal rings, respectively. Each sealing band is brush polished such that it has a surface roughness average of about 0.08 micrometers Ra or less.

Abstract: The present invention relates to a method for treating an optical lens coated on at least one of the main surfaces thereof with a hydrophobic and/or oleophobic external coating, to make it capable of undergoing an edging process, comprising a step of depositing onto at least one part of the hydrophobic and/or oleophobic external coating a temporary adhesive composite film, said adhesive composite film comprising a pre-formed film, one main surface of which is coated with a pressure-sensitive adhesive layer, said adhesive layer directly contacting the hydrophobic and/or oleophobic coating, the pre-formed film modulus of elasticity in tension E? being higher than or equal to 4200 MPa, and the rupture stress of the assembly composed of said adhesive film bonded to a polycarbonate specimen coated with a fluorinated silane layer, measured under tensile stress in accordance with the shear strength evaluation standard NF EN 1465, being higher than or equal to 0.05 MPa.

Abstract: A method is provided for reformulating a chemical mechanical planarization (CMP) slurry for use in conjunction with a CMP tool having an active cycle during which the tool is being used to planarize a substrate, and a rinse cycle during which the tool is being rinsed. The method comprises (a) receiving a feed stream from the CMP tool, at least a portion of the feed stream comprising abrasive particles disposed in a liquid medium; (b) during at least a portion of the rinse cycle, sending the feedstream received from the CMP tool to a first location; and (c) during at least a portion of the active cycle, sending the feedstream received from the CMP tool to a second location where the feedstream undergoes processing to reformulate the slurry.

Abstract: A method of cleaving an optical fiber using a disposable abrasive film is disclosed. The method includes preparing an end of an optical fiber by exposing a length of the optical fiber. The exposed optical fiber is brought into contact with a tangential swipe formed of abrasive film to cause the optical fiber to cleave substantially at the location of contact leaving an optical fiber stub with a cleaved end. The optical fiber stub is polished with a polishing film having a coarse grit and may be polished a second time with a polishing film having a fine grit.