Abstract: An apparatus for smoothing a surface of a rotatably supported substrate includes a base plate, a block having an extending arm structure and being attached to the base plate so as to be movable along the surface of the base plate, a roller attached to a tip portion of the arm structure in a direction perpendicular to the base plate, a mobile member attached to the arm structure so as to be movable perpendicularly to the axial direction of the roller, a tape-running device attached to the base plate for feeding and taking up a polishing tape through the roller so as to advance the tape around the mobile member, and a moving device attached to the arm structure of the block for moving the mobile member.

Abstract: The present invention describes a chemical mechanical polishing apparatus and method that uses a portion of a polishing pad that is disposed under tension between a supply spool and a receive spool, with a motor providing the tension to either the supply spool or the receive spool and the other spool being locked during processing. If a new section of the polishing pad is needed, the same motor that provided the tension is used to advance the polishing pad a determined amount. Further, during processing, a feedback mechanism is used to ensure that the tension of the polishing pad is consistently maintained.

Abstract: The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical processing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.

Abstract: Apparatus and methods are disclosed that promote greater polishing uniformity in linear CMP systems by introducing a relative lateral motion between a CMP belt and a rotating polish head securing a wafer. A belt polish module comprises a linear CMP belt forming a loop around an idle roller and a drive roller, first and second pistons engaging, respectively, first and second ends of the idle roller, and a controller configured to vary the forces applied by the first and second pistons to the ends of the idle roller in order to laterally translate the linear CMP belt. A method for linear CMP comprises rotating a wafer about a vertical axis, contacting the rotating wafer against a linear CMP belt moving in a longitudinal direction, and causing a relative lateral motion between the rotating wafer and the linear CMP belt.

Abstract: A method for grinding lens is provided in the invention. First, a lens which has an optical surface and a surface-to-be-grinded is placed on a polishing pad. Next, cover up the lens with a fluid guiding tube wherein the fluid guiding tube has a fluid inlet and a fluid outlet with the fluid outlet being situated at the top of the polishing pad for accommodating the lens. After that, a fluid is introduced into the fluid guiding tube through the fluid inlet and is discharged from the fluid outlet, and the flow of the fluid follows the normal direction of the optical surface and applies force evenly thereon. Last, the polishing pad is moved along with the tangent line of its surface for the surface-to-be-grinded to be grinded.

Abstract: The substrate processing system has a factory interface module, a chemical mechanical polisher, a cleaner, a particle monitor and a substrate transfer system disposed as an integrated system. The factory interface module may includes a chamber a storage station located in a chamber of the module to hold a plurality of substrates in a substantially horizontal position. The storage station may hold pad break-in wafers for pad preconditioning and/or monitor wafers for defects monitoring. The particle monitor may have a port coupled to the factory interface module.

Abstract: Embodiments of the invention as directed to supporting a polishing pad that can be easily replaced. In one embodiment, a method for polishing an object comprises coupling a polishing head to a substrate for holding a polishing pad which is smaller in area than the object; applying a resilient mechanical force to the perimeter of the substrate with the polishing head to hold the substrate in place during a polishing operation; placing the polishing pad in contact with the object; and rotating the polishing pad with the polishing head.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: A polishing system such as a chemical mechanical belt polisher includes a hydrostatic fluid bearing that supports polishing pads and incorporates one or more of the following novel aspects. One aspect uses compliant surfaces surrounding fluid inlets in an array of inlets to extend areas of elevated support pressure around the inlets. Another aspect modulates or reverses fluid flow in the bearing to reduce deviations in the time averaged support pressure and to induce vibrations in the polishing pads to improve polishing performance. Another aspect provides a hydrostatic bearing with a cavity having a lateral extent greater than that of an object being polished. The depth and bottom contour of cavity can be adjusted to provide nearly uniform support pressure across an area that is surrounded by a retaining ring support. Changing fluid pressure to the retaining ring support adjusts the fluid film thickness of the bearing.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: Abrasive article including a backing plate. Backing plate has a first major surface and a second opposite major surface. A central aperture extends through backing plate. An abrasive layer is secured to the first major surface of backing plate. A fastener is press fit to backing plate so as to define the central aperture.

Abstract: An article of manufacture, a method, and an apparatus for use in a chemical mechanical polishing system is provided. In one aspect, an article of manufacture is provided for polishing a substrate including a polishing article having a polishing surface, the polishing surface including a first polishing portion having a first polishing material of a first hardness for polishing a first portion of the substrate, and a second polishing portion having a second polishing material of a second hardness for polishing a second portion of the substrate. The article of manufacture may be disposed on a rotatable, stationary, or linear platen for processing a substrate. In another aspect, a method is provided for processing a substrate, including providing a platen containing the polishing article disposed on the rotatable platen, delivering a polishing composition to the polishing article, and contacting a substrate on the polishing article.

Abstract: The present invention provides exemplary cluster tool systems and methods for processing wafers, such as semiconductor wafers. One method includes providing (710) a wafer having initial thickness variations between two wafer surfaces. The wafer is subjected to grinding (720), polishing (730) and cleaning (740) processes. The wafer is thereafter transferred (750) to a wafer processing chamber to undergo device formation processes (760-780). The wafer processing steps may be undertaken in a series of process modules of sufficiently small size to permit their use in a circuit device fabrication facility. The in-fab processing of wafers reduces the number of process steps, cost and time typically associated with wafer processing prior to device formation thereon.

Abstract: A substrate for an information recording medium has a microwaviness average height Ra? not greater than 0.05 microinch as measured by a contactless laser interference technique for measurement points within a measurement region of 50 ?m?-4 mm? on a surface of the substrate. The microwaviness average height Ra? is given by: Ra ? = 1 n ? ? i = 1 n ? ? | xi - x _ | , where xi represents a measurement point value of each measurement point, {overscore (x)} representing an average value of the measurement point values, n representing the number of said measurement points. Alternatively, the substrate has a waviness period between 300 ?m and 5 mm and a waviness average height Wa of 1.0 nm or less as measured by the contactless laser interference technique for measurement points in a measurement region surrounded by two concentric circles which is spaced from a center of a surface of the substrate by a predetermined distance.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a membrane formed from a compressible, flexible material, such as neoprene or silicone, and having a first portion with a thickness greater than that of a second portion. The membrane can be aligned with the microelectronic substrate to bias the microelectronic substrate against a planarizing medium such that the first portion of the membrane biases the microelectronic substrate with a greater downward force than does the second portion of the membrane. Accordingly, the membrane can compensate for effects, such as varying linear velocities across the face of the substrate that would otherwise cause the substrate to planarize in a non-uniform fashion or, alternatively, the membrane can be used to selectively planarize portions of the microelectronic substrate at varying rates.

Abstract: An imageable belt includes a seam that is finished using an abrasive finishing machine. The seam comprises a seam width with adhesive material disposed thereon. The finishing process includes an abrasive finishing media with a finishing surface and a backer bar. The backer bar comprises a backer bar radius. The backer bar surface is positioned against the belt inner surface so that the belt outer surface contacts the finishing surface to define a finishing contact arc with respect to the backer bar radius. A tension, feed rate and pressure are applied to the finishing media. Using the finishing machine, the seam is then finished to remove the adhesive material. The finishing process results in a seam that is imageable. In one embodiment, the backer bar radius is adjusted so that the finishing contact arc covers the seam width.

Abstract: A method and apparatus for automatically loading and unloading wafer crystals to and from a double-sided polishing machine of the type having an upper and a lower polishing plate, runner disks with reception openings for the wafer crystals, and a drive to move runner disks to a predetermined loading and unloading position. The position of the centers of the reception openings in a runner disk located in the loading position is measured and stored by means of an optical identification system. A gripping means of a robot arm is successively oriented towards the measured center positions of the reception openings, and the position of the centers of the individual openings is determined and stored by first and second optical identification systems. The individual wafer crystals are tilted while being inserted by the gripping means of the loading arm into the reception openings.

Abstract: A high quality polishing pad suitable for chemical mechanical polishing (CMP) of semiconductor wafer, etc. which is not affected by the change of polishing conditions during polishing and can attain excellent removal rate, capacity of step height reduction and uniformity is described, wherein a polyurethane-based foam 12 having fine and uniform cells 20 suitable for polishing of semiconductor material, etc. obtained by reaction-injection molding a gas-dissolved raw material prepared by dissolving an inert gas in a mixture of a polyurethane or polyurea as a main raw material and various subsidiary raw materials under pressure is used.

Abstract: A system and method are disclosed for edge blending hard drive head sliders by oscillating abrasive lapping tape across the edges of multiple sliders simultaneously.

Abstract: A polishing pad for a chemical mechanical polishing apparatus. The polishing pad includes a plurality of concentric circular grooves. The polishing pad may include multiple regions with grooves of different widths and spacings.

Abstract: A method of chemically modifying a wafer suited for fabrication of semiconductor devices includes a) contacting a surface of wafer with an article that includes a plurality of unit cells repeating across the surface of the article, the individual unit cells including at least a portion of a three-dimensional structure and being characterized by a unit cell parameter as follows: [[V1−Vs]/Aas]/Auc>5 where V1 is the volume defined by the area of the unit cell and the height of the structure of the unit cell, Vs is the volume of the structure of the unit cell, Aas is the apparent contact area of the structure of the unit cell, and Auc is the area of the unit cell, and b) moving at least one of the wafer and the article relative to each other in the presence of a polishing composition that is chemically reactive with a surface of the wafer and capable of either enhancing or inhibiting the rate of removal of at least a portion of the surface of the wafer.

Abstract: A grinding wheel for polishing, which comprises a grinding substrate and diamond-containing resin fibers implanted in the substrate in a form of a brush.

Abstract: In one embodiment, the invention is directed toward inline lapping of magnetic tape. The lapping process is performed inline with one or more other magnetic tape manufacturing processes. In this manner, the number of times the magnetic tape is un-spooled and then re-spooled can be reduced. Consequently, the amount of handling of the individual tape pancakes can also be reduced, thus avoiding damage to the edge of the tape, or other damage associated with tape pancake handling.

Abstract: Polishing machines and methods for mechanical and/or chemical-mechanical polishing of microfeature workpieces are disclosed herein. In one embodiment, a machine includes a table having a support surface, an under-pad carried by the support surface, and a workpiece carrier assembly over the table. The under-pad has a cavity and the carrier assembly is configured to carry a microfeature workpiece. The machine further includes a magnetic field source configured to generate a magnetic field in the cavity and a magnetorheological fluid in the cavity. The magnetorheological fluid changes viscosity within the cavity under the influence of the magnetic field source. It is emphasized that this Abstract is provided to comply with the rules requiring an abstract. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: An invention is provided for removal rate profile manipulation during a CMP process. An apparatus of the embodiments of the present invention includes an actuator capable of vertical movement perpendicular to a polishing surface of a polishing pad. The actuator is further capable of flexing the polishing pad independently of a pad support device. Also included in the apparatus is an actuator control mechanism that is in communication with the actuator. The actuator control mechanism is capable of controlling an amount of vertical movement of the actuator, allowing the actuator to provide local flexing of the polishing pad to achieve a particular removal rate profile. The actuator can also be capable of horizontal movement parallel to the polishing surface of the polishing pad.

Abstract: An abrasive ground fabric which is a composite ground fabric comprising a fiber substrate and a elastic polymer filled in the fiber substrate, wherein (1) the fiber substrate is composed of bundles, each consisting of 20 to 3,000 fine fibers, and (2) the average diameter (D1) of fine fibers existent in a center portion from the center of the cross section perpendicular to a lengthwise direction of each bundle to ½ of the radius of each bundle is 0.3 to 10 &mgr;m, the average diameter (D2) of fine fibers existent in a peripheral portion from ½ of the radius to the end of each bundle is 0.05 to 1 &mgr;m, and the D1/D2 ratio is 1.5 or more. According to the present invention, the abrasive ground fabric is suitably used for the texturing of a substrate in the production of a magnetic recording medium, particularly a hard disk, enables high-accuracy surface finish and has excellent strength.

Abstract: A wear ring assembly is provided for use in a workpiece (e.g. a semiconductor wafer) polishing apparatus. The wear ring assembly comprises a wear element and a backing ring. The backing ring includes a fulcrum and is configured to transfer a component of pressure applied to the backing ring to the wear element via the fulcrum. In this manner, a substantially uniform vertical displacement of the wear ring is achieved.

Abstract: In one embodiment, the invention is directed to techniques for controlling the abrasivity of magnetic tape without modifying the coating formulas used to create the magnetic tape. For example, the invention may involve controlling or adjusting the abrasivity of magnetic tape using one or more burnishing techniques such as lapping, vaming or scraping. In this manner, the abrasivity of magnetic tape can be controlled or adjusted to ensure that the tape meets the necessary tape specifications without modifying the coating formulas applied during the coating process.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: An apparatus and method for re-surfacing compact discs. The method is a two-step method in which the disc to be re-surfaced is first placed on a shaft. A resilient pad supports an abrasive medium and is positioned so the abrasive medium overlaps only the protective layer of the CD. The disc and abrasive material are rotated in opposite directions at about the same speed to remove deeper blemishes in a wet operation. Subsequent polishing is accomplished in a similar manner using a polishing compound instead of an abrasive. The re-surfacing and polishing apparatus each have motor driven shafts which are parallel and spaced apart and support the CD and pad in a cabinet. A transparent cover extends across the top of the cabinet.

Abstract: Provided are a chemical mechanical polishing apparatus and a method of chemical mechanical polishing using the same in which the clogs of the polishing fluid are prevented from being trapped between the diamond grains embedded in the dresser or removing such clogs already trapped, thereby to prevent a desired lifetime of the dresser from being shortened.

Abstract: Abrasive sheet materials, abrasive sheet materials with island distributions of abrasive particles, processes for manufacture of abrasive sheet materials with minimized abrasive content (with monolayers and as few as four layers of abrasive particles), processes for using the abrasive sheeting in high speed lapping/abrading processes, and apparatus for using the abrasive sheeting are described. The process for manufacturing the abrasive sheeting provides an economical method for providing improved quality sheeting, while also allowing for greater control over the shape and distribution of abrasive islands on the sheet than is available from present processes of manufacture.

Abstract: A platen is provided for use in a chemical mechanical planarization (CMP) system. The platen includes at least one fluid output zone having a plurality of fluid outlets, the at least one fluid output zone being disposed below a polishing pad and being capable of providing fluid pressure to the polishing pad. The platen also includes at least one fluid input zone having a plurality of fluid inlets, the at least one fluid input zone being disposed below the polishing pad and being capable of removing the fluid pressure. The platen is capable of managing fluid pressure applied to the polishing pad to achieve a particular polishing profile during a CMP operation.

Abstract: The invention relates to a method for improving wear and tear on support bodies (54) for plates or grinding belts in large-scale grinders (1). The support body (54) has a base body (18), onto which an abrasion-resistant primary layer of at least 0.3 mm thickness is applied using a thermal spraying process. This is configured as an inhomogeneous layer with an oxide entrapment of a specific porosity. If the support body (54) is a roll for the forward feed unit (20, 28), the roll body is roughened and a primer and the primary layer are applied using a thermal spraying process. Approximately 50% of the primary layer consists of chromium steel, in particular 13% chromium steel and an abrasion-resistant hard material and said primary layer provides a coarse surface with good grip that is resistant to wear and tear. If the support body (54) is a grinding-belt contact roll (9, 9′), the latter is polished after the thermal spraying process.

Abstract: A method for cleaning a magnetic head using a cleaning tape comprising a substrate and a cleaning layer, wherein the cleaning tape has a stiffness of 2 or less in a width direction, and the magnetic head has trenches substantially parallel to a sliding direction of the cleaning tape.

Abstract: A polishing pad (for example, polishing pad 305) for use in planarization of a semiconductor wafer (for example, semiconductor wafer 420), the polishing pad 305 featuring a plurality of different polishing surfaces, depending upon the direction of the movement of the polishing pad 305. The polishing pad 305 may take the form of a polishing disc or a polishing belt. The planarization of the semiconductor wafer 420 can then take place at a fewer number of polishing stations, thereby reducing the amount of time needed and reducing the probability of damage to the semiconductor wafer 420.

Abstract: An invention is provided for a carrier head that includes a metal plate having an opening formed in a central location. The metal plate has a wafer side, which faces the backside of a wafer during a CMP operation, and a non-wafer side. Positioned above the non-wafer side of the metal plate, and located above the opening in the metal plate, is a bladder or membrane. To facilitate uniformity during polishing, an inflating pressure is applied to the bladder, or membrane, that is substantially equivalent to a polishing pressure utilized during the CMP operation. To facilitate transporting the wafer, a vacuum can be applied to the opening in the metal plate to adhere the wafer to the carrier head. Further, to release the wafer from the carrier head, the bladder, or membrane, can be inflated such that it protrudes through the opening in the metal plate.

Abstract: Minute and uniform line marks can be formed on the surface of a glass substrate for a magnetic disk by pressing a woven cloth tape comprising plastic fibers preferably by a rubber roller with hardness greater than 60 and causing it to run thereover while supplying a suspension containing abrading particles and a solution which contains hydroxyl groups such as a KOH solution.

Abstract: Abrasive sheet materials, abrasive sheet materials with island distributions of abrasive particles, processes for manufacture of abrasive sheet materials with minimized abrasive content, processes for attaching abrasive particles exclusively on the top surface of raised islands in monolayers, and processes for attaching raised island foundation structures to inexpensive flexible backing sheets are described. The process for manufacturing the abrasive sheeting provides an economical method for providing improved quality abrasive sheeting, while also allowing for greater control over the shape and distribution of abrasive islands on the sheet than is available from present processes of manufacture.

Abstract: One polishing media for chemical mechanical planarization includes an underlayer and a plurality of pressure sensors provided on the underlayer. At least some of the pressure sensors have a pad asperity provided thereon. The pressure sensors may be micro electromechanical systems (MEMS) pressure transducers or MEMS thermal actuators that monitor at least one of localized strain and temperature variation. Another polishing media includes a plurality of chemical sensors. Yet another polishing media includes pressure sensors, chemical sensors, and piezoelectric elements. Based upon the sensory outputs received from adjacent sensors, the piezoelectric elements provide active control to the process input by, for example, inducing localized vibration to modify the spatial removal behavior, inducing localized electric fields, or inducing localized heating/cooling elements.

Abstract: In one illustrative embodiment, the method comprises providing a plurality of wafer lots, each of the lots comprising a plurality of wafers, performing at least one process operation on at least some of the wafers in each of the plurality of lots, identifying processed wafers having similar characteristics, re-allocating the wafers to lots based upon the identified characteristics, and performing additional processing operations on the identified wafers having similar characteristics in the re-allocated lots. In one illustrative embodiment, the system comprises a first processing tool for performing processing operations on each of a plurality of wafers in each of a plurality of wafer lots, a controller for identifying processed wafers having similar characteristics and re-allocating the wafers to lots based upon the identified characteristics, and a second processing tool adapted to perform additional processing operations on the identified wafers having similar characteristics in the re-allocated lot.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: The present invention provides a member for removing foreign matter adhering to the spherical tip portion of a test probe which is put into contact with the bonding pads of a semiconductor chip to test the action of the semiconductor chip. The member includes four essential layers of a base plate, a first elastic member on the base plate and flexibly deformable upon contact of the probe, specifically, a predetermined Young's modulus, a second elastic member on the first elastic member and having a tensile strength and a thickness responding to contact stress produced by the contact of the probe, and an abrasive layer on the second elastic member and made of hard particles and a binding material in a volume ratio providing a smooth sliding action of the probe and producing a high abrasive efficiency to any adhering foreign matter. The removing member can smoothly slide the probe to effectively remove the foreign matter adhering to the probe tip.

Abstract: The invention provides a polishing system that comprises a liquid carrier, an alkali metal ion, hydroxide ions, and a polishing pad and/or an abrasive. The abrasive can be dispersed in the liquid carrier of the polishing system or bound to the polishing pad. The alkali metal ion can be any univalent group I metal ion and is present in the polishing system at a concentration of about 0.05 M or more. Hydroxide ions are present in a sufficient amount to provide the system with a pH of about 9 or more. The liquid carrier of the polishing system can be any suitable polar solvent, such as water. The invention further provides a polishing method that involves polishing a portion of a substrate with the polishing system beginning about 6 hours or less after the polishing system is prepared.

Abstract: A linear polishing apparatus for polishing a semiconductor substrate including a novel polishing belt arrangement with at least two polishing belts forming a continuous loop. Each belt having an outside polishing surface and an inside smooth surface. The belts are spaced alongside each other sharing a common axis at each end. The belts are looped around a pair of rollers making up a driver roller at one end and a driven roller at the other end. A platen member interposes each belt and is placed between the pairs of rollers. The platen provides a polishing plane and supporting surface for the polishing belts. The polishing plane includes a plurality of holes communicating with an elongated plenum chamber underlying the plane. The chamber supplies a compressed gas to impart an upward pressure against the polishing belts. The driver rollers are coupled to separate motors to independently drive and control at least said two of the polishing belts.

Abstract: Embodiments of the invention include methods and apparatus for electrodialytic polishing of various layers formed on semiconductor substrates. In certain embodiments the use of electrodialytic processes in conjunction with chemical mechanical forces to achieve a copper interconnect with a desired level of planarity and process performance. In certain embodiments electrodialytic polishing uses an electrodialytic polish pad, which is an active pad which has copper binding groups provided in its core structure and has an added capability of allowing electrical conductivity. An electrodialytic polish pad allows transfer of cations or anions through a membrane in the presence of an electric field and into a cathodic electrolyte. Under the influence of an electric field the electrodialytic polish pad and/or electrodialytic pads are continuously refreshed to bind cations.

Abstract: The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical polishing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.

Abstract: A method and apparatus for planarizing a microelectronic substrate. In one embodiment, the apparatus can include an elongated, non-continuous polishing pad oriented at an angle relative to the horizontal to allow planarizing liquids and materials removed from the microelectronic substrate to flow off the polishing pad under the force of gravity. Two such polishing pads can be positioned opposite each other in a vertical orientation and can share either a common platen or a common substrate carrier. The polishing pads can be pre-attached to both a supply roll and a take-up roll to form a cartridge which can be easily removed from the apparatus and replaced with another cartridge.

Abstract: The present invention is an expanding device for supporting grinding sleeves. The device has a cylindrical member with an outer bushing unit, an interior bushing unit, an upper control unit, an expanding unit, and a locking mechanism. The outer bushing unit receives the grinding sleeve, and has a first outer diameter of D, and a height H. The interior bushing unit receives a rotatable shaft, has a second outer diameter of I, which is less than D, and a height J, which is less than H. The expanding unit extends from within the upper control unit and between the outer and interior bushing units with protrusions below the outer and interior bushing units. The locking mechanism is interconnected to the upper control unit. And when the locking mechanism is in the unlocked position, a grinding sleeve, which can have diamonds thereon, can be placed on or taken off the outer bushing unit and the device can be placed on or taken off a rotatable shaft.