Abstract: A polishing pad and a polishing method are described. The polishing pad is made from a composition compresing a polymeric matrix, an additive, and a rheology altering agent. The rheology altering agent enables a uniform distribution of the additive in the polymeric matrix.

Abstract: A sanding block is disclosed having an elongate shape having a constant cross section along most of its longitudinal axis. The sanding block is formed of a flexible material and has a curved upper surface and a flat lower surface. The curved upper surface has a width less than that of the flat lower surface but has an arc length about equal to the width of the flat lower surface. The sanding block is used by securing strips of sand paper to one or both of the upper and lower surfaces. The width of the lower surface and the arc length of the upper surface are preferably chosen to be about equal to the width of the sandpaper.

Abstract: A polish pad (120) and platen (130) assembly for use in chemical mechanical polishing of semiconductor devices includes a platen (130) having a grooved or channeled surface (136) which is sealed from the processing environment by an ungrooved portion (131) at the periphery of the platen (130). In addition, the platen (130) includes one or more passageways (132) that provide a pathway to ambient or sub-ambient environment. The combination of the sealing region (131) and the passageway(s) (132) prevent liquids, vapors or other undesirable contaminants from infiltrating between the pad and platen, and also vent trapped air pockets between the pad and platen.

Abstract: The present invention offers a device for rendering CMP polishing pads easily and temporarily removable from and replaceable upon the platen of a CMP polishing apparatus comprising two sheets, the upper sheet attached to the said CMP polishing pad and the lower attached to the said platen, the said two sheets held together by pegs, pins or protrusions fitted to matching holes in the upper surface of the lower sheet and the lower surface of the upper sheet, said pegs or pins attached to either the upper or lower sheet and able to enter the hold on the adjoining sheet when the sheets are brought together and hold the sheets together by means of the sliding friction attendant upon a tight fit with the said holes. The device allows far easier metrology and storage of CMP polishing pads at different stages of use with no damage to the CMP pad, which may be put back into service at any time.

Abstract: A vacuum-assisted sanding device removably connectable to a conventional sanding pad of the type used with mechanical sanders. The sanding device may include a swiveling connection tube for connecting dust removal channels and a recess of a handle block of the sanding device to a vacuum system. The manual sanding device may also include a plate system for suctioning away dust and other particulate matter created during the sanding process.

Abstract: A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing layer over the refractory-metal-containing layer. The first metal-containing layer can include a metal element other than a refractory metal element. The process further includes polishing the first metal-containing layer and the refractory-metal-containing layer as a continuous action to expose the interlevel dielectric. In one embodiment, the metal element can include copper, nickel, or a noble metal. In another embodiment, polishing can be performed using a selectivity agent to reduce the amount of the interlevel dielectric removed.

Abstract: A viscoelastic polisher to be used for polishing. The viscoelastic polisher includes a viscoelastic layer provided on a major surface of a base disk and having a hole of a predetermined radius formed in a center portion thereof, and the base disk has a plurality of grooves equiangularly provided in the major surface thereof as extending radially outward from a center portion thereof. This arrangement ensures stable supply of an abrasive liquid, and obviates a need for formation of grooves in the viscoelastic layer.

Abstract: A polishing pad and a polishing method for polishing a substrate are described. The polishing pad includes a polishing layer and at least two grooves. The grooves form polishing tracks respectively. The polishing tracks collectively construct an even tracking zone. A better polishing uniformity of a substrate surface is achieved with the even tracking zone.

Abstract: There is provided a method for producing a chemical mechanical polishing pad, the method comprising the steps of (1) producing a sheet-shaped polymer molded article and (2) irradiating the sheet-shaped polymer molded article with an electron beam within an irradiation dose of 10 to 400 kGy. A chemical mechanical polishing pad produced by the above method has advantages that it is excellent in removal rate and scratches and in-plane uniformity on a polished surface and that it shows a stable removal rate even when polishing a number of objects to be polished successively.

Abstract: A polish pad (40, 42) and platen (50) assembly for use in chemical mechanical polishing of semiconductor devices includes a platen (50) having a vented endpoint window (62, 72, 82) with one or more venting passageways (e.g., 64, 66) and/or a grooved or channeled platen surface (176) to prevent air pressure buildup in the air gap (46) by discharging or venting air through one or more vent pathways (52) formed in the platen to provide a pathway to ambient or sub-ambient environment. The air permeable construction of the vented endpoint window (72) provides pressure relief for the air gap (46) between the pad endpoint window (44) and the vented endpoint window (72), but may also include passages (75, 76) that are filled with an air permeable hydrophobic material which protects the underlying endpoint detection system (30, 32) from contamination during cleaning of the platen endpoint window (72).

Abstract: A composition including an abrasive, a suspension agent, a surfactant, and a lubricant, is provided for removing scratches, hazing, discoloration, and other defects from plastic surfaces. The composition is applied to a surface and used to polish the surface. The defects within the surface are removed without the removal of significant amounts of the material. Accordingly, the present invention removes defects from surfaces without creating optical distortion.

Abstract: A cleaning device for chemical-mechanical equipment, which includes: an irrotatable center shaft irrotatably coupled with a spindle which is rotated, the irrotatable center shaft including a first channel and a second channel formed in an interior of the irrotatable center shaft, cleaning liquid flowing into the first channel and compressed gas flowing into the second channel; and a nozzle block coupled with the spindle so as to revolve about the irrotatable center shaft above a polishing pad, the nozzle block mixing cleaning liquid supplied through the first channel with compressed gas supplied through the second channel so as to generate twin-fluid, and pressure-injecting the mixed twin-fluid on the polishing pad. Accordingly, cleaning liquid is pressurized so as to be rapidly injected on a polishing pad so that slurry particles and alien substances on the polishing pad are completely removed. Furthermore, wafer scratch can be prevented and the life of the polishing pad can also be increased.

Abstract: A system and method for producing micro-texture on a slider substrate using chemical & mechanical polishing techniques is described. In certain embodiments of the present invention, this is accomplished by a method comprising formulating an abrasive slurry solution of predetermined acidity (or pH value), treating a chemical mechanical polishing pad with the abrasive slurry, disposing magnetic heads on the chemical mechanical polishing pad and lapping and grinding the magnetic heads for a predetermined period of time. In certain embodiment of the present invention the lapping and grinding of the magnetic heads are accomplished using an apparatus comprising an abrasive slurry solution of predetermined acidity (pH value), a chemical mechanical polishing pad treated with the abrasive slurry solution, wherein the magnetic heads are attached to a fixture capable of disposing the heads on the chemical mechanical polishing pad.

Abstract: A conductive polishing article is provided. The conductive polishing article at least has a polishing pad, cathodes and anodes. Cathodes and anodes are disposed below the polishing surface of the polishing pad, and an ion exchange membrane at least partially covers the anodes.

Abstract: The present invention provides a polishing pad used for planarizing inter layer dielectrics and the like by CMP (chemical mechanical polishing) in the manufacturing process of a semiconductor device, a method of producing the polishing pad and a method of producing a semiconductor device by using the polishing pad. The present invention relates to a semiconductor wafer polishing pad having grooves in a polishing surface and formed from a foamed polyurethane, wherein a processed surface of the groove comprising a side surface and a bottom surface has a surface roughness Ra of not more than 10.

Abstract: A grinding apparatus and a grinding system capable of efficient and superior grinding performance prevent the falling of a belt during the grinding of an edge surface thereof. The apparatus includes two rotating bodies 31 and 32 each having segment brushes 4, 4, . . . attached in the circumferential direction at the edge thereof. The rotating bodies 31 and 32 are rotated in the same direction. The tip of the segment brushes 4, 4, . . . is opposed to one edge surface of a belt b stretched between a driving roller 21 and a driven roller 22. The segment brushes 4 of the two rotating bodies enter toward the belt b at appropriate locations on the one edge surface, such that the falling of the belt can be prevented. A grinding apparatus 1 includes a grinder 3 consisting of the rotating bodies 31 and 32, and a holder consisting of the rollers 21 and 22 and a casing 23 by which the rollers are rotatably supported.

Abstract: A hand-held, manually-operated sanding tool including a base member, a clamping mechanism, a handle and a mounting assembly. The clamping mechanism is adapted to secure a sheet-like abrasive material to the base member. The handle includes a neck and a grip. The mounting assembly rotatably mounts the handle to the base member such that the neck extends from a top surface thereof and the handle is rotatable relative to the base member about an axis defined by the neck.

Abstract: A fiber grinding process includes: contacting an end of the optical fiber with a grinding surface in such a manner that a central axis of the optical fiber at the end is inclined to the grinding surface; rotating the optical fiber about the central axis; and changing a contact pressure between the end of the optical fiber and the grinding surface by applying a variable torque while rotating the optical fiber. A substantially cone-shaped end face with a substantially elliptic cross-section may be produced. A fiber grinding apparatus is also disclosed.

Abstract: The polishing pad (104) is useful for polishing at least one of a magnetic, optical and semiconductor substrate (112) in the presence of a polishing medium (120). The polishing pad 104 includes multiple layers of polishing filaments (200, 300, 400, 500) stacked on a base layer (204, 404, 504) of polishing filaments, the multiple layers of polishing filaments (200, 300, 400, 500) having a sequential stacked formation with each layer of the polishing filaments being above and attached to a lower polishing filament, the multiple layers of polishing filaments (200, 300, 400, 500) being parallel to a polishing surface of the polishing pad (104) and wherein individual polishing filaments (202, 302, 402) of the multiple layers of polishing filaments (200, 300, 400, 500) are above an average of at least three polishing filaments (202, 302, 402), to form the polishing pad having an open lattice structure of interconnected polishing filaments (210, 310, 410, 510, 610).

Abstract: A floor abrading machine is used to abrade the surface of a factory finished wooden floor so the abraded surface may be recoated with a fresh coat of wooden floor finish. Abrasion of the surface provides anchor sites to achieve a strong bond between the pre-existing abraded finish and the fresh coat of wooden floor finish. The process requires abrading, not removing the factory finish down to bare wood, and recoating to restore the luster to a factory finished wooden floor. Conventional sanders remove the finish down to bare wood to refinish a wooden floor that has been installed and finished in place.

Abstract: A method for producing a mirror (10) from a titanium-based material by using the technique of ultraprecision machining. The mirror produced using this method has both a shape accuracy and a surface roughness in the submicrometer region. The mirror (10) is made from a titanium-based material having a shape accuracy and a surface roughness in the submicrometer region, whose basic shape (11) has a has a reflecting surface (12) having a surface roughness of less than 60 nm, and in particular of less than 30 nm.

Abstract: An abrasive has a plate shape with a flat surface, in which a maximum diameter of the flat surface thereof is in the range of 0.05 mm to 10 mm, and 1.5 to 100 times as the maximum diameter as thick of the adhesive, and the blast processing method is one in which this abrasive is ejected by being inclined at an incident angle with respect to a surface of a product to be treated. The ejected plate-shaped abrasive slides along the surface of the product to be treated while having the flat surface in slidable contact with the surface of the product to be treated which is an object surface to be treated, so that the surface of the product to be treated is flattened by removing the peaks only, without increasing the depth of the valleys of the roughness curve.

Abstract: The present invention provides a polishing pad which imparts excellent planarity and uniformity thereof to a material to be polished, such as a semiconductor wafer, without forming scratches. The present invention relates to a semiconductor wafer polishing pad comprising a polishing layer and a cushion layer, wherein the polishing layer is formed from foamed polyurethane, has a flexural modulus of 250 to 350 MPa, the cushion layer is formed from closed-cell foam and has a thickness of 0.5 to 1.0 mm and a strain constant of 0.01 to 0.08 ?m/(gf/cm2).

Abstract: In a probe polishing method, a plurality of probes, which are arranged on a probe card for performing an inspection of electrical characteristics of a target object, are polished by using a polishing member. Further, the probes are polished over plural times, while changing a relative position of the abrasive sheet with respect to the probe card.

Abstract: A window polishing pad having a reduced stress pad window formed therein for performing optical end point detection are provided, wherein the window polishing pad comprises a pad window and a pressure relief channel, wherein the pressure relief channel extends to an outer periphery of the window polishing pad from a cavity formed behind the pad window when the window polishing pad is interfaced with a platen and wherein a membrane is provided over at least one of an inlet and an outlet of the pressure relief channel. Also disclosed are methods of making and of using the window polishing pads to polish a semiconductor wafer.

Abstract: An abrasive filament including a matrix of thermoplastic polymer; and a plurality of abrasive particles such as eutectic alumina zirconia particles interspersed throughout at least a portion of the matrix. Abrasive brushes including such abrasive filaments are also disclosed. Methods of deburring a substrate having at least one burr, with a brush, the brush having bristles including eutectic alumina zirconia particles and a matrix of thermoplastic polymer, wherein the method includes the steps of: contacting the substrate with at least one bristle of the brush in a contact region; and inducing relative motion between the substrate and the at least one bristle.

Abstract: It is an object of the present invention to provide a surface protective sheet and a method for grinding a semiconductor wafer, by the use of which any dimple is not formed, nor occurs breakage and fouling of a wafer even when a wafer having high bumps which are highly densely arranged is ground to an extremely small thickness, and besides, no adhesive is left at the roots of the bumps after the surface protective sheet is peeled. The surface protective sheet of the invention is used for grinding a back surface of a semiconductor wafer, and in the surface protective sheet, one surface of a base sheet is provided with an opening portion having a diameter smaller than an outer diameter of a semiconductor wafer to be stuck, on said opening portion no adhesive layer being formed, and a portion which is provided around the opening portion and on which an adhesive layer is formed.

Abstract: The present invention provides a grinding sheet wherein the width of the ridge in the pattern of abrasive layer is larger than the width of the recess formed between the adjacent portions of the ridge. Its shape is suitable to carry out uniform treatment without causing the workpiece to drop into the recess between ridge portions of the pattern of abrasive layer even when the workpiece is swung while the grinding sheet is rotated during grinding operation.

Abstract: An apparatus for lapping a slider comprises a lapping head for supporting elements while pressing the elements against a rotating lapping plate, the elements that are to be formed into sliders, a holding mechanism for supporting the lapping head, the holding mechanism having a first engaging member that extends in a vertical direction, a base for supporting the holding mechanism, the base having a second engaging member that extends in the vertical direction, wherein the second engaging member is engaged with the first engaging member to form an internal space therebetween, and a decompressing mechanism for decompressing the internal space. The holding mechanism is subjected to vertically upward force from the decompressed internal space in order to be movably supported by the base in the vertical direction.

Abstract: An information recording medium glass substrate manufactured by polishing the surface of a raw material glass plate. The polishing is divided into two steps, a step for performing a first polishing process to roughly polish the surface of the raw material glass plate to be smooth and a step for performing a second polishing process to finely polish the surface of the roughly polished raw material glass plate to be smoother. The second polishing process, using a polishing pad made of foam, is divided into two stages, pre-polishing with a polishing agent including abrasive grains of cerium oxide and post-polishing with a polishing agent including abrasive grains of silicon oxide. A rinsing process is performed between the pre-polishing and the post-polishing to rinse the raw material glass plate after the pre-polishing with a washing liquid to wash away the abrasive grains collected in the polishing pad in pre-polishing during the rinsing process.

Abstract: A chemically mechanically polishing method is provided, which includes slide-contacting a polishing film with a polishing pad while feeding a first chemical liquid and a second chemical liquid to the polishing pad. The first chemical liquid contains an electrolyte and bubbles having a diameter ranging from 10 nm to 1000 ?m, and the second chemical liquid contains abrasive particles.

Abstract: An inline-ready method of finishing the surface of a long material (W) capable of preventing any environmental problem from occurring and the mechanical properties of the long material from deteriorating, comprising the steps of holding the long material (W) by two or more elastic endless belts (1) with a specified force, rotating the elastic endless belts (1) in the same direction as or in the reverse direction to the moving direction of the long material by moving the long material (W) and increasing or decreasing the rotating speed of the elastic endless belts (1) more than or less than the moving speed of the long material, and loading powder and granular grinding material (S) between the elastic endless belts (1), characterized in that the grinding material (S) is moved relative to the long material (W) to rub the grinding material (S) against the long material (W) so as to finish the surface of the long material (W).

Abstract: A slider body characterized by rounded corners and edges and smooth surfaces, formed by polishing with a polymeric fiber and a free abrasive slurry of submicron particles.

Abstract: The present invention mainly relates to a polishing pad comprising a base material comprising fibers; a membrane with low permeability; and a buffer layer formed between the base material and an upper surface of the membrane with low permeability and embedded into the fibers of the base material. A method of polishing a substrate comprising using the polishing pad and a method for manufacturing the polishing pad as described above are also provided.

Abstract: A film feeder (FF1) feeds a film (1), a first drive (20) rotates a work (W), a second drive (30) moves the work (W) relative to the film (1), a shoe set handler (40) handles the shoe set (2) to press the film (1) against the work (W), and a deterioration delayer (C) is configured to delay an abrasivity deterioration of the film (1).

Abstract: The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water.

Abstract: According to one example, a grinding plate for releasably mounting at least one grinding tool to a grinding machine, each grinding tool having a tool base with at least one grinding element mounted thereto, the grinding plate having least one pocket located proximate a periphery of the grinding plate, each pocket having an open end and being configured to releasably receive the at least one tool base via the open end, and a biasing element proximate the open end of the at least one pocket, the biasing element movable between an open position and a locked position and being biased to return to the locked position, wherein the tool base may be inserted and removed from the pocket when the biasing element is in the open position, and the pocket, tool base and biasing element are configured to restrict movement of the at least one tool base within the pocket when the tool base is received in the pocket and the biasing element is in the locked position.

Abstract: The present invention mainly relates to a polishing pad and method of producing the same. The polishing pad comprises a base material having a surface for polishing a substrate, wherein the surface comprises a non-woven fabric and an elastomer. The non-woven fabric is made of a long fiber and the elastomer is embedded into the fabric.

Abstract: The present invention provides a method of forming a chemical mechanical polishing pad, comprising providing a tank with polymeric materials and providing a storage hopper with microspheres having an initial bulk density, wherein the storage hopper further comprises a porous membrane provided over a plenum. The method further provides the steps of connecting a fluidizing gas source to the plenum through a gas inlet line and fluidizing the microspheres and reducing the initial bulk density by feeding gas into the plenum. In addition, the method further provides the steps of providing a delivery system for delivering the polymeric materials and the microspheres to a mixer, forming a mixture of the polymeric materials and the microspheres, pouring the mixture into a mold to form a molded product and cutting the molded product into the polishing pad.

Abstract: A lapping device comprises a mounting surface for coupling at least one non-parted slider row. At least one lever arm is coupled to at least one distal end of the mounting surface. The lever arm comprises a coupling feature at an end of the lever arm for receiving a force-vectoring device. The lever arm also comprises a pivot point opposite the coupling feature of the lever arm wherein the pivot point is beyond a distal end of the non-parted slider row.

Abstract: The present invention provides a polishing pad, which has a flatness area and an emboss area on its polishing surface, wherein the flatness area is a flat surface with a roughness less than 20 um, for polishing a wafer; the emboss area has grooves, holes or a combination thereof, for pulling up a wafer from the polishing surface after polishing. By using the polishing pad according to the invention, a wafer may have a higher surface flatness after Chemical-Mechanical Polishing (CMP); and after polishing, the wafer is moved to the emboss area of the polishing pad, so that the wafer may be easily pulled up from the polishing pad surface.

Abstract: A method and apparatus for performing first and second polishings on a workpiece wherein the first and second polishings are performed using different operating parameters.

Abstract: A chemical mechanical polishing slurry for polishing a copper layer without excessively or destructively polishing a barrier layer beneath the copper layer is disclosed and includes an acid, a surfactant, and a silica sol having silica polishing particles that are surface modified with a surface charge modifier and that have potassium ions attached thereto. A method for preparing the chemical mechanical polishing slurry and a chemical mechanical polishing method using the chemical mechanical polishing slurry are also disclosed.

Abstract: A surface treating method for a golf club head includes applying polishing pretreatment on a golf club head and grinding at least one surface of the golf club head with a resilient grinding rod. The resilient grinding rod includes at least one resilient matrix and at least one kind of grinding particles. The resilient matrix is resin or rubber. The resilient matrix has a hardness within a range of Shore A 70 and Shore D 80. The resilient grinding rod includes a grinding end that possesses an inclined grinding face having inclination with an angle ? with respect to a longitudinal axis of the grinding rod.

Abstract: An abrasive article that includes a fixed abrasive element having a plurality of abrasive particles, a resilient element, and a plurality of rigid segments disposed between the fixed abrasive element and the resilient element.

Abstract: The present invention provides a wafer polishing method and a polishing apparatus which are capable of preventing peripheral sags of a wafer due to polishing and then manufacturing the wafer, especially an SOI wafer at a high flatness level. There is provided a wafer polishing method using a polishing apparatus which comprises a rotatable table having a polishing cloth adhered thereon and a polishing head equipped with a wafer holding plate opposing to the table and in which the back surface of the wafer is held by a holding surface of the wafer holding plate and the front surface of the wafer is pressed to and polished by the polishing pad, comprising a polishing step of polishing the front surface of the wafer to a predetermined total polishing stock removal without changing the polishing apparatus, wherein the polishing step is divided into plural sub-steps and a holding position of the wafer in a subsequent sub-step is different from a holding position of the wafer in a previous sub-step.

Abstract: The present invention belongs to the field of surface modification of solid materials, specifically relates to a method of changing the surface wettability of polymer materials. The method of the present invention comprises of rubbing the surface of the polymer materials various times by using sand paper of different grades (GB/T 15305) with a determined pressure at the ambient temperature, so as to change the contact angle of said surface of polymer material with water thereby changing the surface wettability of the polymer materials to different degrees. The method of the present invention has advantages of using devices that are simple, low cost, and the surface characteristics of the polymer materials could be changed from hydrophilicity to hydrophobicity, from hydrophobicity to super hydrophobicity, or from hydrophilicity to super hydrophilicity, at ambient temperature without any special requirement to the polymer materials or the preparation process thereof.

Abstract: Methods for making polishing tools and associated tools are disclosed. In one aspect, a method of making a polishing tool is provided. Such a method may include truing a working surface of a nano-diamond impregnated substrate. The method may further include forming asperities on the working surface with a polycrystalline diamond dresser, where the asperities have a height to distance ratio of from about 1:5 to about 5:1 and where the average asperity diameter is less than about 175 ?m.

Abstract: A method of abrading a surface of a workpiece with a structured abrasive article in the presence of a liquid comprising water and at least one of a sulfonate or sulfate anionic surfactant.

Abstract: A polishing pad (20) for polishing a wafer (32) or other article, the pad having a groove network (60) configured to increase the residence time polishing medium (46) on the pad. The groove network has a first portion (72) that may extend substantially radially outwardly and an oscillating portion (74) that begins at a transition point (76) and is configured to slow the radially outward flow of the polishing medium.