Abstract: A polishing apparatus includes a platen to hold a polishing pad having a plurality of optical apertures, a carrier head to hold a substrate against the polishing pad, a motor to generate relative motion between the carrier head and the platen, and an optical monitoring system. The optical monitoring system includes at least one light source, a common detector, and an optical assembly configured to direct light from the at least one light source to each of a plurality of separated positions in the platen, to direct light from each position of the plurality of separated positions to the substrate as the substrate passes over said each position, to receive reflected light from the substrate as the substrate passes over said each position, and to direct the reflected light from each of the plurality of separated positions to the common detector.

Abstract: An apparatus has a motor, a shaft attached to the motor arranged to be turned by the motor when the motor operates, an attachment at an end of the shaft opposite the motor arranged to allow mounting of components to be ground, a loading block arranged under the end of the shaft having the attachment to support the components to be ground, and an interface to a grinding tool arranged adjacent to the loading block. An apparatus has a motor mounted on a slide, a shaft attached to the motor arranged to spin when the motor operates, an attachment on the end of the shaft to allow attachment of a component, a loading block at least partially supporting the shaft, an interface to a manufacturing tool, the motor and shaft arranged to insert the shaft into the interface when moved along the slide to an engaged position.

Abstract: A chemical mechanical polishing apparatus includes a metrology system that detects the thickness of the polishing pad as semiconductor wafers are processed and the thickness of the polishing pad is reduced. The chemical mechanical polishing apparatus includes a controller that adjusts the rate of material removal of a conditioning disk when areas of the polishing surface are detected that are higher or lower than the adjacent areas of the polishing pad.

Abstract: The profile grinding machine includes: a base; a work unit disposed on one side on the base and including a work table for gripping a work; and a stone unit disposed on the other side on the base and including a stone rotating mechanism for holding and rotating a grinding stone on its axis. The work unit includes first to third moving device for supporting and moving the work table in an X-direction and a Y-direction perpendicular to each other in a horizontal plane, and in a Z-direction normal to the horizontal plane, respectively. The stone unit includes turning mechanism for turning the grinding stone about a vertical axis substantially coinciding with the leading end portion of the grinding stone.

Abstract: A lens holder (16) is attached to a processing target lens (2) such that a holder center (O) coincides with a processing center position (21) of the lens. An axial deviation measuring mark (81a, 81b) is displayed on the processing target lens (2) to coincide with a reference position mark (80a, 80b) of the lens holder (16), and the circumferential surface of the processing target lens (2) undergoes primary processing. After primary processing, the axial deviation of the processing target lens (2) is measured from the reference position mark (80a, 80b) and axial deviation measuring mark (81a, 81b). When axial deviation exists, the lens holder (16) is removed from the processing target lens (2) and the processing target lens (2) is held again, so that the axial deviation is corrected. After that, the processing target lens (2) undergoes secondary processing.

Abstract: A polishing apparatus for polishing a substrate is provided. The polishing apparatus includes: a polishing table holding a polishing pad; a top ring configured to press the substrate against the polishing pad; first and second optical heads each configured to apply the light to the substrate and to receive reflected light from the substrate; spectroscopes each configured to measure at each wavelength an intensity of the reflected light received; and a processor configured to produce a spectrum indicating a relationship between intensity and wavelength of the reflected light. The first optical head is arranged so as to face a center of the substrate, and the second optical head is arranged so as to face a peripheral portion of the substrate.

Abstract: A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP process on the feature using a polish recipe to substantially achieve a within-wafer thickness uniformity of the feature. The polish recipe is determined based on the thickness profile.

Abstract: A grinding device for the surface treatment of rolls, for example of rolls for machines producing, finishing and/or processing webs, such as paper, cardboard or tissue machines, includes stationary components and mobile components which can be separated from each other. The stationary components include guide rails, which extend substantially in parallel to a roll axis of the roll to be treated and which are connected to a substructure. Thus, the stationary components, such as the guide rails, can remain at the place of use of the rolls, while the components that are mobile or can be transported can be easily separated from the stationary components and can be transported to other locations.

Abstract: Embodiments described herein relate to a track system in a polishing system. One embodiment described herein provides a track system configured to transfer polishing heads in a polishing system. The track system comprises a supporting frame, a track coupled to the supporting frame and defining a path along which the polishing heads are configured to move, and one or more carriages configured to carry at least one polishing head along the path defined by the track, wherein the one or more carriages are coupled to the track and independently movable along the track.

Abstract: A method of controlling polishing includes storing a plurality libraries, each library including a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, and for each measured spectrum of the sequence of spectra, finding a best matching first reference spectrum from a first library from the plurality of libraries and finding a best matching second reference spectrum from a different second library from the plurality of libraries, determining a first value associated with the best matching first reference spectrum and determining a second value from the best matching second reference spectrum, and calculating a third value from the first value and the second value to generate a sequence of calculated third values. At least one of a polishing endpoint or an adjustment for a polishing rate can be determined based on the sequence of calculated third values.

Abstract: A method for detecting an end point of a polishing operation (e.g., a polishing stop point or a changing point of polishing conditions) of a film of a substrate is described. The method includes applying light to a surface of a substrate during polishing of the substrate; receiving reflected light from the surface of the substrate, monitoring a first characteristic value and a second characteristic value calculated from reflection intensities at different wavelengths; detecting a point when an extremal point of the first characteristic value and an extremal point of the second characteristic value appear within a predetermined time difference; after detecting the point, detecting a predetermined extremal point of the first characteristic value or the second characteristic value; and determining a polishing end point based on a point when the predetermined extremal point is detected.

Abstract: A polishing system includes a polishing pad with an aperture that extends through all layers of the polishing pad and a light transmissive film positioned on top of a light-generating or light-guiding element of an optical monitoring system.

Abstract: In a polishing process, the characteristics of the removal process may be monitored at different lateral positions to identify the clearance of the various device regions with a high degree of reliability. Consequently, upon forming sophisticated metallization structures, undue over-polishing may be avoided while at the same time providing reduced leakage currents due to enhanced material removal.

Abstract: An apparatus for deburring boards includes a platform, on which first and second guiding rail units perpendicular to each other are fixed, a deburring unit mounted on the first guiding rail unit, a carrying unit adapted for carrying the boards and mounted movably on the second guiding rail unit perpendicular to the first guiding rail unit, and a driving unit disposed on the platform and operable to drive the carrying unit to move between a loading/unloading zone, where the carrying unit is spaced apart from the deburring unit, and a processing zone, where the carrying unit is disposed between opposite deburring members of the deburring unit so that opposite deburred edges of each board contact respectively the deburring members. The driving unit further drives the carrying unit to move back and forth within the processing zone a predetermined number of times, thereby deburring the boards.

Abstract: A chemical mechanical polishing pad is provided, comprising: a polishing layer having a polishing surface; and, a light stable polymeric endpoint detection window, comprising: a polyurethane reaction product of an aromatic polyamine containing amine moieties and an isocyanate terminated prepolymer polyol containing unreacted —NCO moieties; and, a light stabilizer component comprising at least one of a UV absorber and a hindered amine light stabilizer; wherein the aromatic polyamine and the isocyanate terminated prepolymer polyol are provided at an amine moiety to unreacted —NCO moiety stoichiometric ratio of <95%; wherein the light stable polymeric endpoint detection window exhibits a time dependent strain of ?0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 100 minutes and an optical double pass transmission of ?15% at a wavelength of 380 nm for a window thickness of 1.

Abstract: Provided is a gear matching device which performs gear matching to establish a rotational phase relationship between a grindstone (13) and a gear-shaped workpiece (W) in which the grindstone and the workpiece can mesh with each other, before gear machining is performed by causing the grindstone and the workpiece to mesh with each other, and by then relatively rotating the grindstone and the workpiece, the gear matching device including: a tail stock (16) which is supported to be movable in the axial direction of the workpiece, and by which the workpiece is pressed against a rotary table (18) to be rotatably held, the rotary table rotating the workpiece about the axis thereof; and a sensor (33) which is provided to the tail stock, and which faces the workpiece to detect the rotational phase thereof, when the tail stock holds the workpiece.

Abstract: A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.

Abstract: A polishing apparatus detects the escape of a substrate from a top ring during polishing. The polishing apparatus includes a polishing table having a polishing pad, a top ring, and a substrate escape detection section for detecting escape of the substrate from the top ring. The detection section includes a light irradiation member for irradiating an area of the upper surface of the polishing pad with light, a controller for controlling the light irradiation of the light irradiation member, an image-taking member for taking an image of the area irradiated with the light, and an information processing member for processing information outputted from the image-taking member. The controller controls the light irradiation member in such a manner that it performs light irradiation at least for a period of time during which the substrate is regarded as being in contact with the polishing pad.

Abstract: A lapping or polishing machine includes a material having a first finishing surface to process a surface of a work item, a measuring tool to measure a contour of the first finishing surface, and a conditioning tool having a second finishing surface to process the first finishing surface to reduce a difference between the measured contour and a desired contour of the first finishing surface.

Abstract: Chemical mechanical polishing pads having a window with an integral identification feature, wherein the window has a polishing face and a nonpolishing face, wherein the integral identification feature is observable through the window, and wherein the integral identification feature identifies the chemical mechanical polishing pad as a type of chemical mechanical polishing pad selected from a plurality of types of chemical mechanical polishing pads. Also provided is a method of making such chemical mechanical polishing pads and for using them to polish a substrate selected from a magnetic substrate, an optical substrate and a semiconductor substrate.

Abstract: A wafer transferring apparatus includes a top ring for holding a wafer on a lower end surface thereof and a pusher mechanism for transferring the wafer to and from the top ring. The pusher mechanism has a wafer rest for placing the wafer thereon and is arranged to allow the wafer released from the lower end surface of the top ring to be seated on the wafer rest. The pusher mechanism also has a sensor mechanism for detecting when the wafer is properly seated on the wafer rest. The sensor mechanism is adapted to block sensor light emitted from a light-emitting device by the wafer seated on the wafer rest.

Abstract: A method of controlling polishing includes storing a library having a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum using a matching technique other than sum of squared differences to generate a sequence of best matching reference spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of best matching reference spectra. Finding a best matching reference spectrum may include performing a cross-correlation of the measured spectrum with each of two or more of the plurality of reference spectra from the library and selecting a reference spectrum with the greatest correlation to the measured spectrum as a best matching reference spectrum.

Abstract: A method of controlling polishing includes storing a library having a plurality of reference spectra, each reference spectrum of the plurality of reference spectra having a stored associated index value, polishing a substrate having a second layer overlying a first layer, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum to generate a sequence of best matching reference spectra, determining the associated index value for each best matching spectrum from the sequence of best matching reference spectra to generate a sequence of index values, detecting exposure of the first layer, fitting a function to a portion of the sequence of index values corresponding to spectra measured after detection of exposure of the first layer, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the function.

Abstract: A method of polishing includes polishing a substrate, receiving an identification of a selected spectral feature to monitor during polishing, measuring a sequence of spectra of light reflected from the substrate while the substrate is being polished, determining a location value and an associated intensity value of the selected spectral feature for each of the spectra in the sequence of spectra to generate a sequence of coordinates, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of coordinates. At least some of the spectra of the sequence differ due to material being removed during the polishing, and the coordinates are pairs of location values and associated intensity values.

Abstract: A method and apparatus for monitoring the condition of a surface of a retaining ring disposed on a carrier head in a polishing module is described. In one embodiment, a method for monitoring at least one surface of a retaining ring coupled to a carrier head is provided. The method includes moving the carrier head adjacent a sensor device disposed in a polishing module, transmitting energy from the sensor device toward the retaining ring, receiving energy reflected from the retaining ring, and determining a condition of the retaining ring based on the received energy.

Abstract: A polishing end point detection method is to detect a polishing end point of a workpiece having a multilayer structure. The method is performed by emitting a first light and a second light to a surface of the workpiece at a first angle of incidence and a second angle of incidence, respectively, receiving the first light and the second light reflected from the surface through a polarizing filter, performing a first analyzing process of analyzing a brightness and a saturation of the surface from the first light received, performing a second analyzing process of analyzing a brightness and a saturation of the surface from the second light received, and determining removal of the upper layer based on changes in the brightness and the saturation of the surface.

Abstract: A polishing pad assembly for a chemical mechanical polishing apparatus includes a polishing pad having a polishing surface and a surface opposite the polishing surface for attachment to a platen, and a solid light-transmissive window formed in the polishing pad. The light-transmissive window is more transmissive to light than the polishing pad. The light-transmissive window has a light-diffusing bottom surface.

Abstract: Methods and apparatus for spectrum-based endpointing. An endpointing method includes selecting two or more reference spectra. Each reference spectrum is a spectrum of white light reflected from a film of interest on a first substrate and has a thickness greater than a target thickness. The reference spectra is selected for particular spectra-based endpoint determination logic so that the target thickness is achieved when endpoint is called by applying the particular spectra-based endpoint logic. The method includes obtaining two or more current spectra. Each current spectrum is a spectrum of white light reflected from a film of interest on a second substrate when the film of interest is being subjected to a polishing step and has a current thickness that is greater than the target thickness. The method includes determining, for the second substrate, when an endpoint of the polishing step has been achieved.

Abstract: A method of controlling polishing includes polishing a substrate having a second layer overlying a first layer, detecting exposure of the first layer with an in-situ monitoring system, receiving an identification of a selected spectral feature and a characteristic of the selected spectral feature to monitor during polishing, measuring a sequence of spectra of light from the substrate while the substrate is being polished, determining a first value for the characteristic of the feature at the time that the first in-situ monitoring technique detects exposure of the first layer, adding an offset to the first value to generate a second value, and monitoring the characteristic of the feature and halting polishing when the characteristic of the feature is determined to reach the second value.

Abstract: A multilayer chemical mechanical polishing pad is provided, having a polishing layer with a polishing surface, a polishing layer interfacial region parallel to the polishing surface and an outer perimeter; a porous subpad layer with a bottom surface, a porous subpad layer interfacial region parallel to the bottom surface and an outer perimeter; a pressure sensitive adhesive layer; and, a light transmissive window element; wherein the polishing layer interfacial region and the porous subpad layer interfacial region form a coextensive region; wherein the coextensive region secures the polishing layer to the porous subpad layer without the use of a laminating adhesive; wherein the pressure sensitive adhesive layer is applied to the bottom surface of the porous subpad layer; wherein an internal opening extends through the multilayer chemical mechanical polishing pad from the bottom surface to the polishing surface and is bounded by an internal peripheral edge of the porous subpad layer.

Abstract: A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.

Abstract: A visual feedback system and method for airfoil polishing is disclosed. In one aspect there is a system for providing visual feedback during a polishing operation of a workpiece. In this system there is a model having a representation of a desired shape of the workpiece. A scanning system generates a representation of a current shape of the workpiece while in-process during the polishing operation. A comparator compares the current shape of the workpiece to the desired shape of the workpiece. An illumination system highlights the workpiece with visible light during the polishing operation. The highlighting of the workpiece with visible light is a function of the comparison between the current shape and the desired shape. The illumination system highlights a portion of the workpiece that needs additional polishing to conform to the desired shape.

Abstract: A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted.

Abstract: The present invention provides a polishing apparatus and a polishing method capable of calculating outside diameters of rolls of a polishing tape on a polishing-tape supply reel and a polishing-tape recovery reel and capable of calculating a remaining amount of the polishing tape and a consumption of the polishing tape from the outside diameters of the rolls. This polishing apparatus includes a polishing-tape supply reel (46), a polishing head (44), a polishing-tape drawing-out mechanism G1, and a polishing-tape supply and recovery mechanism (45) configured to recover the polishing tape (43) from the polishing-tape supply reel (46) via the polishing head (44).

Abstract: The invention relates to a machining device (5) comprising a workpiece (8) and at least one machining tool (23, 40, 41) and a measuring device (1, 22) and a seat (20) for the workpiece (8) to be machined. The workpiece (8) has a reference surface (26, 32, 33) that is disposed on the workpiece (8) and interacts with the machining device (5) in such a manner that a contour can be produced on this reference surface (26, 32, 33) using the machining tool (23, 40, 41) and that the contour (34, 35, 50) can be detected by the measuring device (1, 22) after machining. The method for controlling a machining device (5) comprises the following steps: introducing a contour (34, 35, 50) into the workpiece (8) to be machined in the longitudinal direction of advance of the machining tool (23, 40, 41); measuring the contour (34, 35, 50) in the workpiece (8) produced by machining; adjusting the machining plan while taking into consideration the determined tool geometry.

Abstract: In one embodiment a method is provided for maintaining a substrate processing surface. The method generally includes performing a set of measurements on the substrate processing surface, wherein the set of measurements are taken using a displacement sensor coupled to a processing surface conditioning arm, determining a processing surface profile based on the set of measurements, comparing the processing surface profile to a minimum profile threshold, and communicating a result of the profile comparison.

Abstract: A wafer polishing apparatus includes a polishing tape extending between two guide rollers, a first surface of the polishing tape contacting a surface of a wafer to be polished, a polishing head including a pusher pad, the pusher pad adapted to push the polishing tape against the surface of the wafer to be polished, a color image sensor adjacent to the polishing tape, the color image sensor being adapted to detect a color image of the polishing tape and to output a signal corresponding to the detected color image, and a controller connected to the color image sensor, the controller being adapted to receive the signal output from the color image sensor and to determine when a color of the color image detected by the color image sensor changes, a change in the color image indicating a polishing end point.

Abstract: Methods and systems for process control during backgrinding of a through-via substrate, such as an embedded through silicon via wafer. A process property value may be sensed and used to determine if a process endpoint has been reached.

Abstract: A method and system are presented for monitoring a process sequentially applied to a stream of substantially identical articles by a processing tool, so as to terminate the operation of the processing tool upon detecting an end-point signal corresponding to a predetermined value of a desired parameter of the article being processed. The article is processed with the processing tool. Upon completing the processing in response to the end-point signal generated by an end-point detector continuously operating during the processing of the article, integrated monitoring is applied to the processed article to measure the value of the desired parameter. The measured value of the desired parameter is analyzed to determine a correction value thereof to be used for adjusting the end-point signal corresponding to the predetermined value of the desired parameter for terminating the processing of the next article in the stream.

Abstract: Methods and apparatus for controlling the removal of material from microfeature workpieces in abrasive removal processes. An embodiment of such a method comprises irradiating a periodic structure of the workpiece and obtaining an intensity distribution of radiation returning from the periodic structure. The workpiece can be irradiated with a wide spectrum of wavelengths (e.g., white light), or the workpiece can be irradiated with a laser or lamp at specific wavelengths. The intensity distribution can be an image or other signal from which a dimension or other physical parameter of the periodic structure can be determined. For example, the intensity distribution can be an intensity signal of radiation returning from the workpiece in a selected bandwidth (e.g., 200 nm-900 nm) or an image of a diffraction pattern of radiation that has been scattered by the periodic structure. The method further includes outputting a control signal based on the obtained intensity distribution.

Abstract: A chemical mechanical polishing pad. The pad includes a surface and a polymer matrix capable of transmitting at least a portion of incident radiation. In addition, at least one embedded structure in the polymer matrix, including a portion of the pad where the embedded structure is not present, and a window integral to the pad defined by the portion of the pad where the embedded structure is not present.

Abstract: The polishing pad is useful for polishing at least one of magnetic, optical and semiconductor substrates. The polishing pad includes a polishing layer having a polyurethane window. The polyurethane window has a cross-linked structure formed with an aliphatic or cycloaliphatic isocyanate and a polyol in a prepolymer mixture. The prepolymer mixture is reacted with a chain extender having OH or NH2 groups and having an OH or NH2 to unreacted NCO stoichiometry less than 95%. The polyurethane window has a time dependent strain less than or equal to 0.02% when measured with a constant axial tensile load of 1 kPa at a constant temperature of 60° C. at 140 minutes, a Shore D hardness of 45 to 90 and an optical double pass transmission of at least 15% at a wavelength of 400 nm for a sample thickness of 1.3 mm.

Abstract: A CMP polishing pad comprising (a) a polishing layer having a polishing surface and a back surface opposite said polishing surface; said polishing layer having at least one cured opaque thermoset polyurethane region and at least one aperture region; said at least one cured opaque thermoset region has a porosity from about 10% to about 55% by volume; said at least one aperture region having (1) a top opening positioned below the polishing surface, (2) a bottom opening that is co-planar with said back surface and (3) straight line vertical sidewalls extending from said aperture top opening to said aperture bottom opening; said at least one aperture region filled with a cured plug of thermoset polyurethane local area transparency material that has a light transmission of less than 80% at a wavelength from 700 to 710 nanometers and is chemically bonded directly to a thermoset polyurethane opaque area; (b) an aperture-free removable release sheet covering at least a portion of said back surface of the polishing l

Abstract: Planarizing systems and methods of planarizing microelectronic workpieces using mechanical and/or chemical-mechanical planarization are disclosed herein. In one embodiment, a planarizing system includes a platen having a support surface carrying a planarizing pad. The planarizing pad includes an optically transmissive window extending through the planarizing pad that forms a continuous segment of the planarizing pad. The system also includes a workpiece carrier configured to move the workpiece relative to the planarizing pad and an optical monitor positioned proximate to the platen. The optical monitor emits light through the window and detects reflected light from the workpiece through the window.

Abstract: The present invention is a wafer polishing method including simultaneously polishing both surfaces of a wafer by pressing and rubbing the wafer, while holding the wafer with: a lower turn table having a flat polishing-upper-surface rotationally driven; an upper turn table having a flat polishing-lower-surface rotationally driven, the upper turn table being arranged with facing to the lower turn table; and a carrier having a wafer-holding hole for holding the wafer, wherein the polishing is performed while measuring a thickness of the wafer through a plurality of openings provided between a rotation center and an edge of the upper turn table or the lower turn table, and switching a polishing slurry with a polishing slurry having a different polishing rate during the polishing of the wafer. As a result, there is provided a wafer polishing method that can manufacture a wafer having a high flatness and a high smoothness at high productivity and high yield.

Abstract: Disclosed in the present application is a sharpening apparatus and method for sharpening a cutting bit. The apparatus comprises a sharpening member and a laser for accurately positioning the cutting bit surface to be sharpened with respect to the sharpening member. The apparatus and method are particularly useful for sharpening a router or shaper bit.

Abstract: A polishing pad has an opaque polishing layer with an aperture therethrough and a polishing surface, and a solid light-transmissive window in the aperture. The solid light-transmissive window includes an outer portion secured to the polishing layer and an inner portion secured to the outer portion. The outer portion has a upper surface recessed relative to the polishing surface, whereas the inner portion has an upper surface that is substantially co-planar with the polishing surface.

Abstract: Methods and apparatus for providing a chemical mechanical polishing pad. The pad includes a polishing layer having a top surface and a bottom surface. The pad includes an aperture having a first opening in the top surface and a second opening in the bottom surface. The top surface is a polishing surface. The pad includes a window that includes a first portion made of soft plastic and a crystalline or glass like second portion. The window is transparent to white light. The window is situated in the aperture so that the first portion plugs the aperture and the second portion is on a bottom side of the first portion, wherein the first portion acts a slurry-tight barrier.

Abstract: A polishing system includes a platen having a top surface to receive a polishing pad, a recess in the top surface, and a cavity inside the platen spaced from the recess, a carrier head to hold a surface of a substrate against the polishing pad on the platen, a monitoring module located in the cavity, the monitoring module including a light source and a detector, an optical head removably mounted in the recess in the top surface platen, and an optical fiber having a proximate end coupled to the monitoring module and a distal end held by the optical head holding the distal end of the optical fiber in a position to direct light through a window in the polishing pad to the surface of the substrate and receive reflected light from the surface of the substrate.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.