Abstract: A method for mounting a semiconductor wafer on a polishing block to hold the semiconductor wafer during polishing. The method comprises the steps of providing a polishing block having a surface for mounting the semiconductor wafer, coating the polishing block surface with a bonding agent, applying radiant heat to the polishing block and bonding agent to soften the bonding agent, and applying the semiconductor wafer to the softened bonding agent. The step of applying radiant heat to the polishing block and bonding agent is performed by a radiant heater in a dry environment.

Abstract: A method of monitoring the condition of a tool in a machining operation for producing a plurality of toothed workpieces. The process comprises measuring the temperature of at least a portion of the plurality of workpieces each at essentially a same predetermined amount of time after machining. The temperature of each measured workpiece is compared to at least one workpiece reference temperature value indicative of a wear condition of the tool. If the measured temperature is less than or equal to the workpiece reference temperature value, machining of subsequent parts continues, or, if the measured temperature is greater than the workpiece reference temperature, the machining operation is stopped.

Abstract: A polishing apparatus makes it possible to accurately detect the temperature of a workpiece during polishing and to perform polishing end point determination on the basis of this detected temperature. The polishing apparatus polishes irregularities in a surface of a workpiece such as for example a semiconductor wafer to a flat and mirror-like finish. A top ring holding a semiconductor wafer is provided with a temperature sensor. Frictional heat generated in the semiconductor wafer by polishing is detected by the temperature sensor, and a polishing end point is determined on the basis of the detected temperature.

Abstract: A method and apparatus are described for Chemical Mechanical Polishing of wafers which achieves a constant removal rate of material from the wafer over the entire surface of the wafer. The wafer is held in a wafer carrier rotating at a wafer carrier angular velocity and is polished using a platen rotating at a platen angular velocity. The pressure exerted on the wafer by the wafer carrier is the largest at the wafer edge and smallest at the center of the wafer. The wafer carrier is divided into a number of wafer carrier circular segments so that the temperature of each wafer carrier circular segment can be controlled. The platen is divided into a number of platen circular segments so that the temperature of each platen circular segment can be controlled. The temperatures of the wafer carrier circular segments and the platen circular segments are then adjusted to provide a removal rate of material from the wafer which is uniform across the surface of the wafer.

Abstract: Endpoint determination of a wafer removal process, in-situ, is afforded by the use of a Kalman filter known to be useful in celestial navigation. The use of line variable displacement transducers provides position error correction for the Kalman filter and the Preston equation provides the initial calibration for the endpoint determination. Accuracies of fifty angstrom are achieved.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: A system for polishing a semiconductor wafer, the system comprising a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means for heating the wafer while the wafer face is being polished.

Abstract: In accordance with the present invention, there is provided a machine for performing abrading operations. The preferred machine includes an upper lap plate and lower lap plate mounted for rotation about its own vertical axis. A carriage means supports the upper lap plate, and a frame means supports the carriage means at spaced locations in a manner permitting the carriage means to reciprocate vertically within the frame means relative to the lower lap plate for performing abrading operations and to provide access for loading and unloading the workpieces. The upper lap plate also may reciprocate vertically and independently of and relative to the carriage means for performing abrading operations and to provide access for loading and unloading the workpieces. Additionally, the abrading machine may be provided with a temperature control device having at least one tube disposed adjacent the lower lap plate for coolant fluid flow.

Abstract: A polishing system for polishing a wafer or the like, comprises: a vacuum system comprising a vacuum pump and a vacuum passage connected thereto; a fluid supply system comprising a fluid source and a fluid passage connected thereto; a polishing head comprising a holding member for holding the wafer or the like on the lower surface thereof which has at least one through hole in communication with the vacuum passage and the fluid passage; and a polishing member. Polishing of the wafer or the like is performed by pressing the wafer or the like held on the lower surface of the holding member, against the polishing member while providing relative motion between the holding member and the polishing member and supplying an abrasive slurry to the polishing member. Separation of the wafer or the like from the polishing head is performed by injecting a fluid from the fluid supply system to the object through the through hole of the holding member.

Abstract: This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.

Abstract: A system for polishing a semiconductor wafer, the system comprising a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means for heating the wafer while the wafer face is being polished.

Abstract: Disclosed are polished and planarized diamond films and a method and apparatus for polishing and planarizing diamond films. The method generally includes mechanical polishing of the diamond film against a ceramic surface in the presence of a treating agent of potassium nitrate and a polishing agent of potassium hydroxide. The produced films have an average surface roughness on the order of 0.05 microns, a planarization uniformity within eight percent, and are relatively free of process-induced contaminants.

Abstract: A turn broaching machine for broaching a workpiece comprises a hollow arbor having a plurality of axially spaced apart, circumferentially extending cutting segments projecting radially outwardly from the side wall thereof. The cutting segments each have a radially outer peripheral edge provided with broaching elements. A closed loop system circulates a heated fluid through the arbor. The fluid is heated to an elevated temperature of about 100 F.-150 F. to maintain the arbor in a similarly heated condition during broaching. Maintaining the arbor at a relatively constant, elevated temperature during broaching stabilizes the broach by eliminating axial thermal expansion.

Abstract: An apparatus for polishing a dielectric layer deposited on a top surface of a semiconductor substrate includes a table, a semiconductor substrate, a carrier, a pipe, a nozzle and an actuator assembly provided with a base, a power source, a cavity and a thermally expanding material. The actuator assembly controls the vertical position of the table by supplying a current to the thermally expanding material.

Abstract: A system for polishing a semiconductor wafer, the system comprising a platen subassembly defining a polishing area; a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and means for heating the wafer while the wafer face is being polished.

Abstract: An improved and new process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the removed layer thickness is detected, in-situ, without necessity to remove the substrate from the polishing apparatus has been developed. The method comprises monitoring the temperature of the polishing pad or the polished substrate versus polishing time, integrating the polishing temperature change versus polish time curve with polish time, and applying computer stored integration coefficients to the integrated area to derive the removed thickness.

Abstract: CO.sub.2 jet spray cleaning apparatus that monitors CO.sub.2 snow plume characteristics. The present invention is a CO.sub.2 jet spray cleaning system that comprises a holding tank for containing liquid CO.sub.2, a spray nozzle coupled to the holding tank, a valve coupled between the holding tank and the spray nozzle, and a temperature sensor coupled to the nozzle for sensing the temperature of a plume of CO.sub.2 that is sprayed by the nozzle and for providing a signal indicative thereof. The system may also comprise a display coupled to the temperature sensor for displaying the temperature of the plume of CO.sub.2 to an operator, or an alarm coupled to the temperature sensor for alerting an operator that the temperature of the plume of CO.sub.2 has risen to a predetermined level. Either the displayed signal or the alert signal indicates that the quality of the plume has diminished and that the liquid CO.sub.2 in the holding tank should be replenished. The present CO.sub.2 jet spray cleaning system and CO.

Abstract: An improved blast cleaning system and an improved method of blast cleaning using solid carbon dioxide pellets is provided. A compressed air source--preferably an air compressor--is used to produce a compressed air or carrier gas stream which is cooled to the desired temperature by injection of a cryogen--preferably liquid nitrogen--before the solid carbon dioxide pellets are introduced into the carrier gas stream. Solid carbon dioxide pellets are then added to the cooled compressed air stream and then propelled towards the surface to be cleaned. Using a compressed air stream which is precooled to the desired operating temperature helps to minimize the sublimation of the carbon dioxide pellets. The use of the precooled compressed air stream also allows greater control of the hardness, size, density, impact forces, stripping rates, and stripping efficiencies of the carbon dioxide pellets. An improved method of transporting solid carbon dioxide pellets which can be used for nonblasting applications (e.g.

Abstract: A blowing device for a belt grinding machine has a nozzle arrangement having nozzles positioned relative to its grinding belt for blowing cleaning air jets onto the circulating grinding belt. The device further has an oscillating drive to oscillate the nozzle arrangement in the longitudinal direction thereof. A pair of elastic members suspend the nozzle arrangement, which is oscillated in the longitudinal direction by using a magnetic field. A ferromagnetic member is connected to the nozzle arrangement and is positioned within the magnetic field produced by an electric coil. By varying the magnetic field, the nozzle arrangement can be moved in the longitudinal direction, the spring providing an elastic restoring force to move the nozzle arrangement is the opposite direction when the magnetic field is turned off.

Abstract: A plurality of cells are provided in a concave portion of a top plate. A cloth to which water is penetrated is provided in a back face of each cell, and a wafer is attracted by the cloth. First and second pipes are connected to each cell. The first pipe introduces liquid to the cell, and the second pipe discharges liquid from the cell, and guides liquid to the first pipe. A constant-temperature device is provided to each first pipe, and a temperature of liquid of each cell is adjusted by the constant-temperature device in accordance with a temperature distribution of the wafer. Whereby, a polishing rate of each part of the wafer can be equalized.

Abstract: An improved and new process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the endpoint for the planarization process is detected by monitoring the temperature of the polishing pad with an infrared temperature measuring device, has been developed. The method allows endpoint to be detected in-situ at the polishing apparatus, without necessity to unload the substrate for visual inspection or performance of specialized, time-consuming, and costly thickness and/or surface topography measurements.

Abstract: An apparatus for grinding an elongated knife blade used in a veneer lathe or a veneer slicer has a blade mount with a mounting surface on which the blade is fixed. In order to prevent a thermal distortion of the cutting edge of the blade after it has been ground by the grinding wheel and naturally cools, the blade mount and the blade thereon are cooled by supplying a cooling medium even to an intervening surface or area therebetween. The blade and mount are also cooled entirely by direct contact with the cooling medium. The grinding wheel is controlled such that when it is lowered to abut against the blade, a resistance torque increase is detected and the grinding wheel is raised slightly to a grinding start level from where the grinding feed and stroke of the wheel is started so that interference between the wheel and the blade is prevented during the initial longitudinal stroke of the wheel along the blade.

Abstract: A system and method for cleaning or removing coatings, such as paint, from a surface with a stream of particles. A carbon dioxide (CO.sub.2) pelletizer forms carbon dioxide pellets, which are delivered by a delivery system against a surface to be cleaned. The delivery system includes a hopper for containing the pellets and a high pressure air supply. A feeder introduces the pellets from the hopper into the high pressure air. The combined high pressure air and pellets are directed along a delivery hose to a nozzle, which directs the air and pellets against a surface to be cleaned. Temperature sensors are provided to monitor the temperature of the pressurized air at various points in the delivery system. Signals from the temperature sensor are provided in a feedback control manner to a control valve. The control valve controls the introduction of liquid nitrogen (N.sub.2) into the air stream at a mixing chamber in the delivery system.

Abstract: A grinding machine provided with a spindle rotating under the influence of a cantilever mounted rare earth permanent magnet motor. Hydrostatic fluid film bearings are provided between the ends of the spindle and a bronze bearing to support the spindle in such a manner so as to eliminate wear. A single oil reservoir is used to supply oil to the hydrostatic bearings, as well as to the cooling jacket of the motor.

Abstract: An apparatus for cleaning cylindrical surfaces includes a plurality of cleaning stations. Each cleaning station is designed to receive a substrate and includes a plurality of nozzles. The inlet end of each nozzle is connected to a source of liquid Carbon Dioxide, and the outlet end of each nozzle is connected to one end of a respective Carbon Dioxide expansion chamber. Liquid Carbon dioxide leaving each nozzle is converted to solid Carbon Dioxide in the corresponding expansion chamber. The other end of each Carbon Dioxide expansion chamber is coupled to a respective funnel which is, in turn, connected to a dispersing saddle. The dispersing saddles disperse the stream of solid Carbon Dioxide particles leaving each funnel and direct these particles to the substrate surface. The dispersing saddles are placed such that the entire circumference of the substrate surface is enveloped within the various streams of solid Carbon Dioxide particles.

Abstract: A process for machining mils and similar work pieces, especially for grinding the roll surface to a desired shape which process is characterized by continuously meshing the distance between the part of the work piece (1) which is subjected to working and a reference measuring means, preferably a measuring point of the tool or means cooperating therewith, which depends on the position of the working tool (2), with a distance measuring means (4), as well as the temperature of the work piece at or close to the spot of working and/or the distance measuring point with a temperature measuring means (3), submitting signals corresponding to the measured value from the distance and temperature measuring means resp.

Abstract: This invention relates to a carbon dioxide blast cleaning system for propelling dry-ice pellets by cryogens, namely high pressure nitrogen, helium and/or oxygen, against a surface being cleaned. Carbon dioxide pellets, in a pellet hopper, a blast unit and a blast gun are located at a blast site near the surface being cleaned. A portable cryogenic liquid nitrogen, liquid helium and/or liquid air tank with an ambient air vaporizer is also located at or near the blast site. Cryogenic liquid nitrogen, liquid helium and/or oxygen flow through the ambient air vaporizer to the liquid and is vaporized to form a high pressure gas. The high pressure, cryogenic gas is then brought into the blast unit and mixed with the pellets. The mixture of the high pressure gas and the pellets exit the gun nozzle at high velocities to blast the surface being cleaned.