Abstract: Apparatus controls the temperature of a wafer for chemical mechanical polishing operations. A wafer carrier wafer mounting surface positions a wafer adjacent to a thermal energy transfer unit for transferring energy relative to the wafer. A thermal energy detector oriented adjacent to the wafer mounting surface detects the temperature of the wafer. A controller is responsive to the detector for controlling the supply of thermal energy relative to the thermal energy transfer unit. Embodiments include defining separate areas of the wafer, providing separate sections of the thermal energy transfer unit for each separate area, and separately detecting the temperature of each separate area to separately control the supply of thermal energy relative to the thermal energy transfer unit associated with the separate area.

Abstract: A substrate processing apparatus polishes a to-be-polished portion of a semiconductor substrate with a polishing tape. Part of the polishing tape is heated in advance. Part of the polishing tape is deformed conforming to a shape of the to-be-polished portion. Part of the deformed polishing tape is brought into contact with the to-be-polished portion of the substrate. The substrate and polishing tape are moved relative to each other.

Abstract: It is one object of a grinding machine and a grinding fluid supply-nozzle therefor according to the present invention to supply grinding fluid to a moving grinding point reliably, even if the surfaces of a grinding wheel is abraded up. A wheel head 5 advances/retracts to a workpiece. A grinding wheel G is carried rotatably by the wheel head 5 and grinds an eccentric portion W of the workpiece. A grinding fluid supply-nozzle 50 supplies grinding fluid to a moving grinding point K where the grinding wheel G contacts the eccentric portion W of the workpiece. The grinding fluid supply-nozzle 50 is made from a curve portion 53, an opening 51 and a straight portion 52 between the curve portion 53 and the opening 51. The grinding fluid supply-nozzle 50 spouts the grinding fluid to a grinding fluid supply point Pc upstream the grinding points K and Ks, even in the case that the grinding wheel G has been abraded up.

Abstract: Apparatus controls the temperature of a wafer for chemical mechanical polishing operations. A wafer carrier wafer mounting surface positions a wafer adjacent to a thermal energy transfer unit for transferring energy relative to the wafer. A thermal energy detector oriented adjacent to the wafer mounting surface detects the temperature of the wafer. A controller is responsive to the detector for controlling the supply of thermal energy relative to the thermal energy transfer unit. Embodiments include defining separate areas of the wafer, providing separate sections of the thermal energy transfer unit for each separate area, and separately detecting the temperature of each separate area to separately control the supply of thermal energy relative to the thermal energy transfer unit associated with the separate area.

Abstract: There is provided a chemical mechanical polishing apparatus, which may include a polishing table rotated by a polishing table motor and having a pad thereon, a carrier head located above the polishing table to be rotatable by the driving of a carrier head motor and having a wafer located under the bottom thereof, a slurry supplier for supplying a slurry to the upper portion of the polishing table, a first polishing end point detector for detecting a polishing end point through the temperature change of the temperature sensor, at least one temperature sensor for detecting the temperature of a polishing region (the wafer, the pad, and the slurry), and a second polishing end point detector for detecting a polishing end point from the changes of load current, voltage, and resistance of the carrier head motor.

Abstract: Apparatus and method to inject an air stream with dry ice or other sublimable particles to be blasted against a surface to be cleaned. An air lock assembly (20) with an air stream passage (21) and an intersecting conveyor passage (13) that has an endless cable conveyor assembly (38) passing through it. The conveyor (38) passes through a hopper (30) of dry ice particles before entering the air lock (20) and injecting the air stream with dry ice particles. V-seals packings (18) are provided as a means of limiting air form escaping from the points where the conveyor (38) enters and exits the air lock assembly (20). An adjustable speed motor (10) drives the conveyor (38) thereby giving an adjustable control of the ratio of dry ice to air.

Abstract: A chemical mechanical polishing apparatus and method can use an eddy current monitoring system and an optical monitoring system. Signals from the monitoring systems can be combined on an output line and extracted by a computer. A thickness of a polishing pad can be calculated. The eddy current monitoring system and optical monitoring system can measure substantially the same location on the substrate.

Abstract: A linear chemical mechanical planarization (CMP) system includes a belt pad, a slurry bar having a plurality of nozzles, and a heating module for heating slurry. The heating module has a plurality of heating elements, each of which is coupled in flow communication with one of the plurality of nozzles of the slurry bar. The system also may include a control system for controlling the heating elements of the heating module and first and second temperature sensors coupled to the control system. The first temperature sensors measure the temperature of slurry heated by each of the heating elements, and the second temperature sensors measure the temperature of the surface of the belt pad. A method for dispensing slurry in a linear CMP system, and methods for controlling the temperature of the surface of the belt pad and the temperature of slurry in a linear CMP system also are described.

Abstract: A thin-film magnetic head is formed on a support and is provided with a reproducing head part, a recording head part, and a heater for generating heat upon energization. A medium-opposing surface S of the magnetic head is polished while energizing the heater or recording head part.

Abstract: A method of precisely controlling the amount of flatness or curvature in a lapping plate is disclosed. The lapping plate is formed from two layers of metal alloys, such as tin-antimony and steel. A bimetallic effect is exploited to induce a linear expansion in the plate so that the flatness or curvature of the plate is manipulated with thermal cycling. The plate is machined and charged under very specific and tightly controlled temperatures to produce a very robust, flat plate charge. As temperature cycling induces a linear expansion along a single plane across the plate, the resultant flatness change is scalar with temperature, and can be repeated and controlled. When the plate laps magnetic sliders, the plate can be thermally cycled to produce a conical surface and a high crown-to-camber ratio can be achieved.

Abstract: In chemical mechanical polishing apparatus, a wafer carrier plate is provided with a cavity for reception of a sensor positioned very close to a wafer to be polished. Energy resulting from contact between a polishing pad and an exposed surface of the wafer is transmitted only a very short distance to the sensor and is sensed by the sensor, providing data as to the nature of properties of the exposed surface of the wafer, and of transitions of those properties. Correlation methods provide graphs relating sensed energy to the surface properties, and to the transitions. The correlation graphs provide process status data for process control.

Abstract: The present invention supplies coolant to a grinding wheel surface and reliably guides the coolant to a grinding point on the grinding wheel surface, thereby significantly reducing the amount of coolant to be used. In a grinding method and device for supplying coolant while grinding a workpiece W with a rotating grinding wheel 1, a fluid nozzle 2 is disposed upstream from a grinding point 11 on the circumferential surface 10 of the grinding wheel 1. The fluid nozzle 2 blows a jet of fluid across an air layer 12, which is a layer of flowing air dragged along the circumferential surface 10 of the grinding wheel 1, from one lateral side of the air layer 12 to the other lateral side thereof. A grinding fluid nozzle 3 supplies coolant to a region between the grinding point 11 and a cutoff position 13 at which the fluid jet from the fluid nozzle 2 has deflected the air flow from the air layer 12. The coolant supplied from the grinding fluid nozzle 3 contacts the grinding point 11 on the grinding surface 10.

Abstract: A method of treating the surface of mechanically abraded glass includes a first step of providing a glass substrate having opposing first and second surfaces. The glass substrate having a recess in the first surface formed by abrasion, such as sand blasting. The glass substrate can also include a via therethrough, formed by said abrasion technique. A next step includes heating the glass substrate to its softening point. A next step includes holding the glass substrate at its softening point for a predetermined period of time to polish the recess and vias. This polishing returns transparency to the glass and reduces the possibility of crack propagation by reducing stress points and microcracks.

Abstract: A system and apparatus precisely controls the amount of flatness or curvature in a lapping plate. The lapping plate is formed from two layers of metal alloys, such as tin-antimony and steel. A bimetallic effect is exploited to induce a linear expansion in the plate so that the flatness or curvature of the plate is manipulated with thermal cycling. The plate is machined and charged under very specific and tightly controlled temperatures to produce a very robust, flat plate charge. As temperature cycling induces a linear expansion along a single plane across the plate, the resultant flatness change is scalar with temperature, and can be repeated and controlled. When the plate laps magnetic sliders, the plate can be thermally cycled to produce a conical surface and a high crown-to-camber ratio can be achieved.

Abstract: In a coarse honing step in a section (101), a honing head (15) provided with coarse honing hones (17) is inserted into a cylinder bore (13) of a cylinder block (11), the honing head 15 is rotated while axially moving it, and the inner peripheral surface of the cylinder bore (13) is thereby ground. In the next idling step in a section (102), the cylinder block (11) is left as it is for (60) seconds to generate a springback (S). In a subsequent finishing honing step in a section (103), a honing head (21) provided with finishing honing hones (19) is inserted into the cylinder bore (13), the honing head (21) is rotated in a reverse direction to a rotational direction in the coarse honing step while axially moving it, and the inner peripheral surface of the cylinder bore (13) is thereby ground. Further, a coolant is supplied to the sections of the coarse honing step, the idling step, and the finishing honing step from coolant nozzles (23), (25), and (27), respectively, using a common coolant supply source (29).

Abstract: A chemical mechanical polishing apparatus is described, which includes a platen, a polishing pad that is attached to the platen, and a means for adjusting the temperature of the polishing pad.

Abstract: The invention includes a method for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The method includes exposing the pad surface to steam, and the steam can comprise ammonium citrate. The invention also includes an apparatus for conditioning a surface of a polishing pad after chemical-mechanical polishing of a semiconductor substrate with the pad surface. The apparatus includes a conditioning stone, and a steam outlet port proximate the conditioning stone. The steam outlet port is configured to jet steam onto the pad surface during the conditioning of the pad surface.

Abstract: A temperature controlling system for use in a chemical mechanical planarization (CMP) system having a linear polishing belt, a carrier capable of applying a substrate over a preparation location over the linear polishing belt is provided. The temperature controlling system includes a platen having a plurality of zones. The temperature controlling system further includes a temperature sensor configured determine a temperature of the linear polishing belt at a location that is after the preparation location. The system also includes a controller for adjusting a flow of temperature conditioned fluid to selected zones of the plurality of zones of the platen in response to output received from the temperature sensor.

Abstract: The invention provides a method of reducing thermal distortion in grinding machines. Such machines each comprise a machine base (60) and a grinding wheel (50) for grinding components in the machine (10). The method includes the steps of: (a) sensing a first temperature at an upper surface of the base (60) substantially below a position (110) in the machine (10) whereat component grinding using the wheel (50) occurs; (b) sensing a second temperature of an underside surface of the base (60) substantially below the position (110) whereat component grinding occurs; (c) determining a relationship between component size drift and changes in a difference between the first and second temperatures; and thereafter (d) correcting a positional offset applied to the wheel (50) during grinding in accordance with the determined relationship, thereby reducing the component size drift.

Abstract: A method and apparatus for diamond wire cutting of metal structures, such as nuclear reactor vessels, is provided. A diamond wire saw having a plurality of diamond beads with beveled or chamfered edges is provided for sawing into the walls of the metal structure. The diamond wire is guided by a plurality of support structures allowing for a multitude of different cuts. The diamond wire is cleaned and cooled by CO2 during the cutting process to prevent breakage of the wire and provide efficient cutting. Concrete can be provided within the metal structure to enhance cutting efficiency and reduce airborne contaminants. The invention can be remotely controlled to reduce exposure of workers to radioactivity and other hazards.

Abstract: An inhomogeneous glass ceramic material having a ceramic phase and a glass phase is polished by a method that reduces surface roughness at a preselected temperature to values less than 2 ?. The method includes polishing the surface of the glass ceramic material at a predetermined working temperature with a polishing wheel and/or a suspension and selecting the predetermined working temperature so that differing erosion of the glass phase and the ceramic phase is compensated because of the different thermal expansion coefficients when the glass ceramic material is at the preselected temperature. In the case of the glass ceramic material the working temperature generally should be below the preselected temperature in order to minimize surface roughness.

Abstract: A method and apparatus for controlling a polishing characteristic of a polishing pad used in planarization of a substrate. The method preferably includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface soften and/or become more soluble, and/or material comprising the planarizing surface attains approximately its glass transition temperature. The waste matter accumulations and/or a portion of the planarizing surface are in this way softened and more easily removed. The planarizing surface is either heated directly by directing a flow of heated planarizing liquid or heated air to the planarizing surface or indirectly by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: The CMP removal rate of a fixed abrasive article is increased and wafer-to-wafer uniformity enhanced by thermal preconditioning. Embodiments include preconditioning a fixed abrasive article by heating with hot water to a temperature of about 90° C. to about 100° C. to increase and stabilize the Cu or Cu alloy CMP removal rate.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed. In embodiments, a polishing pad includes a backing layer having an opening, a polishing layer having an opening aligned with the opening in the backing layer, a solid window of a first material in the opening of the polishing layer, a layer of a first adhesive material between the backing layer and the solid window, and a layer of a second adhesive material between the layer of the first adhesive material and the window.

Abstract: A device for transferring an object between manufacturing steps includes a transfer surface for receiving an object having an initial temperature from a first manufacturing step, for transporting the object from the first manufacturing step to another manufacturing step, and for transferring the object having a final temperature from the transfer surface to the other manufacturing step; and at least one Peltier unit coupled to the transfer surface for effecting a temperature change of the object from the initial temperature to the final temperature at a controlled rate.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: Apparatus controls the temperature of a wafer for chemical mechanical polishing operations. A wafer carrier wafer mounting surface positions a wafer adjacent to a thermal energy transfer unit for transferring energy relative to the wafer. A thermal energy detector oriented adjacent to the wafer mounting surface detects the temperature of the wafer. A controller is responsive to the detector for controlling the supply of thermal energy relative to the thermal energy transfer unit. Embodiments include defining separate areas of the wafer, providing separate sections of the thermal energy transfer unit for each separate area, and separately detecting the temperature of each separate area to separately control the supply of thermal energy relative to the thermal energy transfer unit associated with the separate area.

Abstract: A thin-film magnetic head is formed on a support and is provided with a reproducing head part, a recording head part, and a heater for generating heat upon energization. A medium-opposing surface S of the magnetic head is polished while energizing the heater or recording head part.

Abstract: It is one object of a grinding machine and a grinding fluid supply-nozzle therefor according to the present invention to supply grinding fluid to a moving grinding point reliably, even if the surfaces of a grinding wheel is abraded up.

Abstract: The invention provides a method of reducing thermal distortion in grinding machines. Such machines each comprise a machine base (60) and a grinding wheel (50) for grinding components in the machine (10). The method includes the steps of: (a) sensing a first temperature at an upper surface of the base (60) substantially below a position (110) in the machine (10) whereat component grinding using the wheel (50) occurs; (b) sensing a second temperature of an underside surface of the base (60) substantially below the position (110) whereat component grinding occurs; (c) determining a relationship between component size drift and changes in a difference between the first and second temperatures; and thereafter (d) correcting a positional offset applied to the wheel (50) during grinding in accordance with the determined relationship, thereby reducing the component size drift.

Abstract: Disclosed is a cylindrical grinding machine of the type that a workpiece support device composed of a work head and a foot stock is mounted on a forward upper portion of a bed while a wheel head unit composed of a slide base and a wheel head is mounted on a rear upper portion of the bed. A coolant collecting vent which takes a rectangular shape as viewed from above vertically extends in the bed and opens to the upper surface of the bed to cover an area that extends from under the workpiece on the workpiece support device to under the forward portion of the wheel head unit. A horizontal vent is provided in the bed to open to the rear surface of the bed and to communicate with the collecting vent. A coolant supply device is inserted at a part thereof into the horizontal vent from the rear surface of the bed to extend an inlet opening into the collecting vent.

Abstract: An apparatus is provided for polishing a substrate. The apparatus includes a polishing pad configured to traverse from at least a first point to a second point. A first sensor is located near the first point and oriented so as to sense an incoming temperature of the polishing pad. A second sensor is located near the second point and oriented so as to sense an outgoing temperature of the polishing pad. A difference between the incoming temperature and the outgoing temperature is then used to determine endpoint of a polishing operation.

Abstract: A method for cutting up a workpiece which is in rod or block form by means of a saw, wherein the temperature of the workpiece is measured during the cutting, and the measurement signal is transmitted to a control unit, which generates a control signal which is used to control the temperature of the workpiece, or wherein the temperature of the workpiece is controlled during the cutting by a control signal based on a predetermined control curve.

Abstract: A chemical mechanical planarization (CMP) apparatus includes a bath of an aqueous solution. A first holder, which is configured to support a wafer, is disposed within the bath. A first spindle is configured to rotate the first holder. A second holder, which is rotated by a second spindle, is disposed above the first holder. The second holder supports a planarization media, which is disposed within the bath. The planarization media is oriented to face the surface of the first holder on which the wafer is to be supported. The planarization media can be a pad containing polyurethane or a substrate having an overlying abrasive film. The CMP apparatus also can include a system for recirculating and reconditioning the aqueous solution. A method for performing a CMP process also is described.

Abstract: A method is described for grinding a crankpin of a crankshaft using computer controlled wheelfeed and headstock drives (44,30,24). During a final grinding step leading to finish size the cutting force is maintained on the wheelhead (38) to keep the wheel (34) and pin under a moderate constant load and the rotational speed of the headstock drive (24) is reduced. This serves to prevent bounce and chatter marks appearing in the surface of the pin. The rotational speed is typically in the range of 1 to 5 rpm. During the final step of grinding each pin, the wheelfeed is adjusted so as to remove a sufficient depth of material during a single rotation of the crankshaft, to bring the crankpin to finish size.

Abstract: A chemical mechanical polishing (CMP) apparatus with temperature control. The apparatus controls circular zone temperature of the wafer. The CMP apparatus comprises a platen; a carrier holding a wafer against the platen; a guide ring disposed at the rim of the carrier to mount the wafer on the carrier; and a heater disposed in the guide ring, in the carrier, or used to heat the slurry. The temperature of the heater is set between 20° C. and 60° C. Thus, the polishing rate at the edge is improved, and the polishing difference between the edge and the center of the wafer is reduced.

Abstract: A thermal-chemical polishing device and method for polishing a diamond film of a workpiece, the device includes a horizontally displaced first rotatable high rpm shaft and a vertically displaced second rotatable high rpm shaft that are perpendicular. The first shaft is made of a material from transition metals or rare-earth elements which undergo a chemical reaction with the diamond film at high temperature. The circumferential surface of the first shaft has a predefined heating region. The second shaft moves axially towards the first shaft to allow the diamond film to make contact with the heating region of the first shaft. A heating unit is provided to heat up the heating region to create a chemical reaction for thermal-chemical polishing to perform while the diamond film is in contact with the heating region. The device of the present invention increases the rate of polishing and also decreases cost.

Abstract: A polishing tool such as a fixed abrasive polishing tool or a polishing pad is used in a polishing apparatus. A workpiece is pressed against a polishing surface of the polishing tool containing a resin to bring the workpiece into sliding contact with the polishing tool, thereby polishing the workpiece. The polishing surface of the polishing tool is kept at a temperature equal to or lower than a glass transition temperature of the polishing tool.

Abstract: The present invention is an improved apparatus and process for chemical mechanical polishing layers which have a low dielectric constant (K). The present invention lowers the temperature of the material having a low dielectric constant and then polishes that material at the lower temperature. By lowering the temperature of the low K material the hardness or stiffness of the material is improved making it easier to polish and resulting in a more planar surface.

Abstract: A chemical mechanical polisher that is equipped with a chilled wafer holder and a chilled polishing pad and a method for operating the chemical mechanical polisher are described. A first heat exchanging fluid is flown into a membrane chamber inside the wafer holder in intimate contact with the backside of the wafer such that the wafer can be sufficiently cooled. A second heat exchanging fluid is circulated in a plurality of surface grooves, or fluid channels provided in the bottom surface of the polishing pad to sufficiently cool the polishing pad during a chemical mechanical polishing process. The slurry suspension contained in-between the wafer surface and the polishing pad can thus be sufficiently cooled.

Abstract: The operation of a polishing pad conditioner for a CMP apparatus is monitored. The polishing pad conditioner includes a housing, a first drive pulley disposed in the housing and connected to a motor at a first side of the housing, a conditioning head having a diamond disk for conditioning the polishing pad and mounted to a second side of the housing, a second pulley coupled to the conditioning head for transferring the driving force from the drive pulley to the conditioning head, a timing belt engaged with the first and second pulleys, an air supply tube for supplying air under pressure to the conditoner head to force the head against a polishing pad of the CMP apparatus, and at least one sensor disposed in the housing for sensing the operation of the conditioning head.

Abstract: An endpoint detection system in a CMP apparatus has a polishing platen, a polishing pad covering the polishing platen, a chamber located in the polishing platen, and a gas flow system arranged in a periphery of the chamber. The gas flow system has a gas inlet used to flow dry gas into the chamber and a gas outlet used to evacuate water vapor in the chamber. Since the gas flow system can evacuate the water vapor in the chamber, the problem of contaminants such as water droplets has been solved. The endpoint detection can thus be precisely controlled.

Abstract: A method for controlling a polishing characteristic of a polishing pad used in the planarization of a substrate is disclosed. The method includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface are softened and/or be come soluble. The planarizing surface is heated by directing a flow of heated planarizing liquid or a heated gas onto the surface so that the material comprising the planarization surface attains approximately its glass transition temperature. Alternatively, the planarizing surface may be heated by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: The invention comprises copper chemical-mechanical polishing processes using fixed abrasive polishing pads, and copper layer chemical-mechanical polishing solutions specifically adapted for chemical-mechanical polishing with fixed abrasive pads. In one implementation, processes are described for pH's of 7.0 or greater. In one implementation, processes are described for pH's of 7.0 or less. In one implementation, a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 1% to 15% by volume, a copper corrosion inhibitor present at from about 0.01% to 2% by weight, and a pH of less than or equal to 7.0. In one implementation, a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad comprises a copper oxidizing component present at from about 0.

Abstract: A reliable, inexpensive “back side” thinning process, capable of globally thinning an integrated circuit die to a target thickness of 10 microns, and maintaining a yield of at least 80%, for chip repair and/or failure analysis of the packaged die. The flip-chip packaged die is exposed at its backside and mounted on a lapping machine with the backside exposed. The thickness of the die is measured at at least five locations on the die. The lapping machine grinds the exposed surface of the die to a thickness somewhat greater than the target thickness. The exposed surface of the die is polished. The thickness of the die is again measured optically with high accuracy. Based on the thickness data collected, appropriate machine operating parameters for further grinding and polishing of the exposed surface are determined. Further grinding and polishing are performed. These steps are repeated until the target thickness is reached.

Abstract: A system for cooling a slurry compound used during polishing and grinding is disclosed. In one embodiment, the system includes a cooling module, such as a refrigeration unit, connected to a heat-transfer device, such as a metal coil. The cooling module cools the heat-transfer device. The heat-transfer device cools the slurry compound.

Abstract: A cold-gas-blow-cooling type machining apparatus including a relative movement device which moves a workpiece and a machining tool relative to each other, and a cold-gas-blow supply device which supplies a cold gas blow to a machining point at which the workpiece is machined by the machining tool. The machining apparatus includes: a workpiece-temperature detecting device which detects a temperature of the workpiece; and a machining-condition control device which controls at least one of the relative movement device and the cold-gas-blow supply device, on the basis of the detected temperature of the workpiece. The machining-condition control device includes a cooling-condition control device which controls the cold-gas-blow supply device so as to control at least one of a temperature and a flow rate of the cold gas blow.

Abstract: There is provided a cutting method comprising winding a wire around plural grooved rollers, and pressing the wire against the work with running it, to cut the work, wherein the work is cut with controlling temperature of the work by supplying a cutting fluid containing abrasive grains to the grooved rollers, and supplying a temperature controlling medium to the work and a wire saw. Thereby, influence of the heat generated during cutting process of the work is controlled, and a relative shift of the work and the wire can be suppressed, a level of a warp of a wafer and a local warp can be improved, and flatness in a polishing step can be improved.

Abstract: A method of conserving a facility delivered to a machine during the machine's idle mode is herein described. In one embodiment, the method is directed to a method for conserving coolant water delivery to a semiconductor wafer grinding machine. The system monitors the status of the grinder to determine whether the grinder is active or idle. After the system determines the grinder has entered idle mode, the system reduces the flow of water to the machine. In one embodiment, the flow is simply reduced while, in another embodiment, the flow is terminated. A delay circuit in the system may delay the reduction of the flow rate until some point after entering idle mode. Periodically throughout the idle mode, the system increases the flow of coolant water to the grinder to ensure the temperature of all grinder components remains consistent. The duty cycle of the coolant flow may be adjusted to optimize water conservation and machine readiness.

Abstract: A polishing apparatus for CMP is provided. Heating means heats the substrate held by the holder. Temperature detecting means detects temperature of the heating means. Temperature compensating means sets temperature compensation values in such a way that a polishing rate is approximately uniform over a whole polishing surface of a polishing film. The polishing film is formed on the substrate. The heating means is controlled in such a way that the temperature detected by the temperature detecting means corresponds to the temperature compensation values. The substrate is heated by the heating means while controlling the heating means with the controller within a polishing period of the film. The heating means may comprise heaters arranged to cover the substrate and controlled by a controller.