Abstract: A polishing apparatus polishing a surface of a substrate, such as a semiconductor substrate. The polishing apparatus including a substrate holding mechanism, a polishing table having a polishing surface, and a polishing surface temperature controller for controlling a temperature distribution of the polishing surface. The substrate holding mechanism and the polishing table provide relative movement between the surface of the substrate and the polishing surface while the substrate holding mechanism presses the surface of the substrate against the polishing surface to thereby polish the surface of the substrate. The polishing surface temperature controller controls the temperature distribution so that the polishing surface has a predetermined temperature distribution to thereby control removal rates of portions of the surface of the substrate.

Abstract: According to one embodiment, a magnetic head includes a write element, a read element, and a heating element disposed between the write element and the read element. When power is applied to the heating element, either the read element or the write element projects beyond a plane of an air-bearing surface (ABS) of the magnetic head, and when power is not applied to the heating element, a portion of the ABS of the magnetic head facing a magnetic disk close to the heating element has a concave shape. In another embodiment, when power is applied to the heating element, at least one of a portion of the read element and a portion of the write element approaches a magnetic disk, and when power is not applied to the heating element, a portion of the ABS of the magnetic head facing a magnetic disk close to the heating element has a concave shape.

Abstract: A method and apparatus for_cutting a profile in a workpiece, such as a turbine disk, without cracking the parent material which includes providing a grinding wheel having a ceramic grinding surface formed with an optimized grain material and grain spacing to produce large chips that are easily removed from the workpiece, applying the grinding wheel to the workpiece at a predetermined material removal rate, and increasing the material removal rate when the burning point is recognized at the surface of the workpiece by the grinding action of the grinding wheel, and delivering coolant/lubricant to the workpiece during the grinding operation.

Abstract: A method and apparatus for temperature control for a chemical mechanical polishing process is provided. In one embodiment, the method comprises polishing the substrate with a surface of a polishing pad assembly, measuring a real-time temperature of the surface of the polishing pad assembly, determining whether the real-time temperature of the surface of the polishing pad assembly is within a predetermined processing temperature range, and contacting the surface of the polishing pad assembly with a pad conditioner to adjust the temperature of the surface of the polishing pad assembly to fall within the predetermined temperature range.

Abstract: Semiconductor wafers are processed so as to remove material on one or both sides by means of at least one grinding tool, with coolant supplied into a contact region between the semiconductor wafer and the at least one grinding tool, characterized in that the coolant flow rate is set as a function of a grinding tooth height of the at least one grinding tool and this coolant flow rate is reduced as the grinding tooth height decreases.

Abstract: The present invention provides a slicing method comprising winding a wire around a plurality of grooved rollers and pressing the wire against an ingot to be sliced into wafers while supplying a slurry for slicing to the grooved rollers and causing the wire to travel, wherein a supply temperature of the slurry for slicing is controlled, and slicing is performed in such a manner that the supply temperature of the slurry for slicing and a temperature of the ingot become at least 30° C. or above at end of slicing the ingot. As a result, there is provided the slicing method that can alleviate precipitous cooling of an ingot in the time close to end of slicing the ingot and thereby suppress production of a nano-topography when slicing the ingot by using a wire saw.

Abstract: A chemical mechanical apparatus comprises a polishing platen, a roller pad assembly capable of advancing a polishing pad across the platen, a substrate carrier to press a substrate against the polishing pad, and a heater to heat the substrate to a temperature sufficiently high to provide a rate of removal of material from the substrate that compensates for the wear of the polishing pad.

Abstract: The present invention provides a method of minimal quantity lubrication cutting and grinding that can improve cutting and grinding properties and extend the life of tools. The minimal quantity lubrication cutting and grinding method of the present invention comprises supplying a compressed fluid containing 0.1 to 15 percent by volume of oxygen together with a cutting and grinding oil (particularly preferably an oil composition comprising an ester) to processing spots of a workpiece.

Abstract: Chemical mechanical polishing pads are provided, wherein the chemical mechanical polishing pads have a polishing layer comprising an interpenetrating network including a continuous non-fugitive phase and a substantially co-continuous fugitive phase. Also provided are methods of making the chemical mechanical polishing pads and for using them to polish substrates.

Abstract: An eyeglass lens processing apparatus includes a lens holding unit for holding an eyeglass lens, a roughing tool, a finishing tool, a drilling tool, a processing water supply unit for applying processing water to a processed part of the lens held by the lens holding unit, and a controller for controlling driving operations of each of the processing tools and the processing water supply unit in order to execute roughing for the lens by the roughing tool without application of the processing water, drilling for the lens by the drilling tool without the application of the processing water after the roughing and finishing for the lens by the finishing tool with the application of the processing water after the drilling.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information which can be used to control a planarizing operation.

Abstract: The present invention provides a slicing method comprising winding a wire around a plurality of grooved rollers and pressing the wire against an ingot to be sliced into wafers while supplying a slurry for slicing to the grooved rollers and causing the wire to travel, wherein a cooling speed of the ingot when a slicing depth is equal to or above ? of a diameter is controlled to perform slicing by supplying a slurry for adjusting an ingot temperature to the ingot independently from the slurry for slicing while controlling a supply temperature only in a period from the moment that the slicing depth of the ingot reaches at least ? of the diameter to end of slicing. As a result, the slicing method is provided, in which rapid cooling of the ingot in the time close to end of slicing the ingot can be alleviated when a wire saw is used to slice the ingot, and generation of a nano-topography can be thereby suppressed and further high quality wafers having a uniform thickness are obtained by slicing.

Abstract: A method of singulating semiconductor devices applies a blade to a molded strip that includes the semiconductor device. The blade generates a kerf at a contact point between the blade and the molded strip. The kerf is filled with a plurality of particles. The kerf separates the semiconductor device from the molded strip. The method cools the blade by using a synthetic lubricant. The method lubricates the blade by using the synthetic lubricant. The method rinses the kerf by using the synthetic lubricant. Rinsing the kerf removes a substantial quantity of the particles from the kerf. A system singulates semiconductor devices from a molded strip by using a blade, a temperature control device, and a synthetic lubricant. The blade singulates the semiconductor device from the molded strip. The temperature control device applies the synthetic lubricant to the blade. The synthetic lubricant cools, lubricates, or rinses the blade, or a combination thereof, during a singulation process.

Abstract: A method of determining a position of a coolant nozzle relative to a rotating grinding wheel removing material from a work-piece and an apparatus for practicing the method are disclosed. The method includes the step of disposing a coolant nozzle having a base and a distal end for adjustable movement relative to the grinding wheel and the work-piece. The distal end of the coolant nozzle can be moved in a first plane normal to an axis of the grinding wheel along a first arcuate path centered on a pivot axis at the base. The distal end can also be moved by moving the pivot axis in the first plane along an orbit centered on the grinding wheel axis. The method also includes the step of selecting a position of the distal end along the first arcuate path. The method also includes the step of projecting a second arcuate path in the first plane centered on the grinding wheel axis and having a radius extending to the position of the distal end along the first arcuate path.

Abstract: By creating a temperature profile across a polishing pad, a respective temperature profile may be obtained in a substrate to be polished, which may result in a respective varying removal rate across the substrate for a chemically reactive slurry material or for an electro-chemically activated polishing process. Hence, highly sensitive materials, such as material comprising low-k dielectrics, may be efficiently polished with a high degree of controllability.

Abstract: The present invention provides a polishing apparatus for polishing a periphery of a substrate. This polishing apparatus includes a rotary holding mechanism configured to hold the substrate horizontally and rotate the substrate, plural polishing head assemblies provided around the substrate, plural tape supplying and recovering mechanisms configured to supply polishing tapes to the plural polishing head assemblies and recover the polishing tapes from the plural polishing head assemblies, and plural moving mechanisms configured to move the plural polishing head assemblies in radial directions of the substrate held by the rotary holding mechanism. The tape supplying and recovering mechanisms are located outwardly of the plural polishing head assemblies in the radial directions of the substrate, and the tape supplying and recovering mechanisms are fixed in position.

Abstract: There are provided a polishing apparatus and a polishing method capable of performing polishing a work (such as a wafer) with high efficiency and high precision, a novel work holding plate effectively holding a work and an adhering method for a work capable of adhering the work on the work holding plate with high precision. The polishing apparatus comprises: a polishing table(29); and a work holding plate(38), wherein a work held on the work holding plate(38) is polished supplying a polishing agent solution(41) in the apparatus, and in polishing action, an amount of deformation of the polishing table(29) in a direction normal to an upper surface thereof with respect to the upper surface thereof and/or an amount of deformation of the work holding plate(38) in a direction normal to a work holding surface thereof is restricted to 100 m or less by forming the polishing table(29) in one-piece, contriving flow paths of cooling water and others.

Abstract: The double face polishing apparatus is capable of controlling an amount of supplying slurry to a lower polishing plate. The double face polishing apparatus comprises: a lower polishing plate and an upper polishing plate; a carrier provided between the polishing plates, the carrier having a through-hole for holding a workpiece; a plate driving unit for rotating the polishing plates; a carrier driving unit for rotating the carrier; ring-shaped ducts coaxially provided to the upper polishing plate; a slurry supply source supplying slurry to the ring-shaped ducts; and supply pipes for supplying the slurry to the lower polishing plate. The slurry is supplied to each of coaxial polishing zones of the lower polishing plate via the corresponding ring-shaped ducts and the supply pipes.

Abstract: In a rough grinding step the large quantity of coolant supplied to cool the grinding point enables the flow to pass through a wheel-following air layer and reach the grinding point while the supply of an air jet is stopped during this step. At a fine grinding step, the grinding point can be cooled with a small quantity of coolant in so far it is reliably supplied to the grinding point. This is realized by supplying an air jet to intercept the wheel-following air layer which rotates to follow the grinding wheel, while supplying the coolant in small quantity. Consequently, the coolant is prevented from being scattered by the air jet and suspended in form of mist when supplied in large quantity at the rough grinding step, and the coolant quantity used can be reduced at fine grinding step and minute grinding step.

Abstract: A method and apparatus for cutting a profile in a workpiece, such as a turbine disk, without cracking the parent material which includes providing a grinding wheel having a ceramic grinding surface formed with an optimized grain material and grain spacing to produce large chips that are easily removed from the workpiece, applying the grinding wheel to the workpiece at a predetermined material removal rate, and increasing the material removal rate when the burning point is recognized at the surface of the workpiece by the grinding action of the grinding wheel, and delivering coolant/lubricant to the workpiece during the grinding operation.

Abstract: The present invention provides an apparatus for heating or cooling a polishing surface. This apparatus includes a heat exchanger arranged so as to face the polishing surface when the workpiece is polished. The heat exchanger includes a medium passage through which a heat-exchanging medium flows, and a bottom surface facing the polishing surface. At least a part of the bottom surface is inclined with an upward gradient above the polishing surface such that a polishing liquid on the polishing surface generates a lift exerted on the bottom surface during movement of the polishing surface.

Abstract: A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring.

Abstract: Method of processing a workpiece comprising (a) providing a tool and a workpiece, wherein the workpiece has an initial shape; (b) placing the workpiece and the tool in contact to form an interface, applying force to the tool and/or the workpiece, and moving the tool and/or the workpiece to effect a change in the initial shape of the workpiece; (c) applying a lubricant to any area on a surface of the tool and/or to any area on a surface of the workpiece while the workpiece and the tool are in contact; and (d) applying a cryogenic fluid to any area on the surface of the tool and/or to any area on the surface of the workpiece while the workpiece and the tool are in contact.

Abstract: An eyeglass lens processing apparatus for processing an eyeglass lens includes: a lens chuck that holds the lens; a roughing tool; a finishing tool; a finishing data input unit that inputs finishing data; a water supply unit that supplies water to a portion being processed of the lens; a first temperature sensor that senses temperature of the water to be supplied; and an operating unit that corrects the input finishing data based on the temperature sensed by the first temperature sensor.

Abstract: A substrate polishing apparatus includes a substrate holding mechanism having a head for holding a substrate to be polished, and a polishing mechanism including a polishing table with a polishing pad mounted thereon. The substrate held by the head is pressed against the polishing pad on the polishing table to polish the substrate by relative movement of the substrate and the polishing pad. The substrate polishing apparatus also includes a substrate transfer mechanism for delivering the substrate to be polished to the head and receiving the polished substrate. The substrate transfer mechanism includes a substrate to-be-polished receiver for receiving the substrate to be polished, and a polished substrate receiver for receiving the substrate which has been polished.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator which is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information which can be used to control a planarizing operation.

Abstract: The double face polishing apparatus is capable of controlling an amount of supplying slurry to a lower polishing plate. The double face polishing apparatus comprises: a lower polishing plate and an upper polishing plate; a carrier provided between the polishing plates, the carrier having a through-hole for holding a workpiece; a plate driving unit for rotating the polishing plates; a carrier driving unit for rotating the carrier; ring-shaped ducts coaxially provided to the upper polishing plate; a slurry supply source supplying slurry to the ring-shaped ducts; and supply pipes for supplying the slurry to the lower polishing plate. The slurry is supplied to each of coaxial polishing zones of the lower polishing plate via the corresponding ring-shaped ducts and the supply pipes.

Abstract: A chemical mechanical polish system for polishing a wafer includes a polishing head; an inner tube connected to the polishing head, wherein the inner tube is filled with a heat media; a media heater connected to the inner tube; and a pressure controller connected to the inner tube.

Abstract: Fluid jet polishing (FJP) is a method of contouring and polishing a surface of a component by aiming a jet of a slurry of working fluid from a nozzle at the component and eroding the surface to create a desired shape. During erosion, the end of the nozzle and the component are submerged within the working fluid, whereby air is not introduced into the closed loop of working fluid slurry. Any bubbles that are present in the system simply bubble to an air pocket at the top of the erosion chamber and are not re-circulated, thereby producing surfaces with very smooth surface finishes.

Abstract: A multi-wire saw according to the present invention cuts a workpiece while supplying a slurry containing an alkali or mixed acid to a cutting interface between the workpiece and a wire, and includes: a storage tank with a heating mechanism for storing and heating the slurry; a thermal insulating pipe for transporting the slurry sent with a pump from the storage tank with a heating mechanism to a position before a position where the wire is incorporated into the workpiece, while keeping the slurry at a predetermined temperature; a thermostat for keeping a temperature in a vicinity of the workpiece fixed to a stage at the predetermined temperature; and a wire heating mechanism for heating the wire to the predetermined temperature. Consequently, the cutting resistance decreases during cutting machining of a silicon ingot, and the variation in the cutting resistance also decreases, whereby a high-quality wafer can be obtained at a high efficiency and a low cost.

Abstract: A method for manufacturing an article having polymeric residue that is to be removed during the manufacture of the article is disclosed. The article is introduced into a controlled environment of a processing tool having one or more processing chambers. Free radicals are generated from one or more reactant gases and introduced into at least one of the one or more processing chambers where they react with the polymeric residue. A cryogenic cleaning medium is supplied into at least one of the one or more processing chambers where the cryogenic cleaning medium removes the polymeric residue present after the free radicals react with the polymeric residue. The reactant gases are selected to facilitate removal of the polymeric residue with the cryogenic cleaning medium. The cryogenic cleaning medium is supplied with a pulsating flow via a nozzle implement that sweeps across the article.

Abstract: Polishing uniformity in a CMP process may be improved due to an improvement in the temperature uniformity of a polishing surface, when a wafer is polished by a CMP apparatus including a polishing head for holding the wafer, a platen, a polishing pad at a top of the platen so as to polish the wafer, and a heat conduction medium on or in the polishing pad and configured to diffuse heat of the polishing pad such that the temperature distribution of the polishing pad may become substantially uniform.

Abstract: An apparatus for edge processing of a glass sheet, the apparatus including a shroud, a finishing member and a wiping device. The finishing member is substantially enclosed by the shroud. The apparatus uses pressurized air emitted by at least one slot in the wiping device to prevent contaminants resulting from the edge processing from settling on and/or adhering to surfaces of the glass sheet. The wiping device may include a jet of washing fluid directed at the glass sheet to further wash the surfaces and the processed edge of the glass sheet.

Abstract: A retainer ring configured to reduce heat generated during a polishing process may include a heat absorbing element, a thermoelectric element, and a heat dissipating element. A polishing head configured to polish a wafer may include a wafer carrier, a retainer ring, and a cooling element. A chemical mechanical polishing apparatus including a polishing pad formed on a platen and a polishing head including a retainer ring.

Abstract: Apparatus for and methods of chemical mechanical polishing (CMP) of semiconductor wafers are disclosed. A preferred embodiment comprises an apparatus for polishing a semiconductor workpiece that includes a polishing pad, a fluid dispenser adapted to dispense a fluid to the polishing pad, and a temperature measurement device adapted to measure the temperature of the fluid. The apparatus includes a heat exchanger adapted to increase or decrease the temperature of the fluid.

Abstract: The present invention relates generally to the field of chemical/mechanical polishing of substrates. In particular the invention relates to methods of producing improved membranes for use in chemical/mechanical polishing systems. The present invention provides a method of improving the properties of a flexible membrane for use in chemical/mechanical polishing, the method including subjecting the membrane to elevated temperatures.

Abstract: Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed.

Abstract: Planarizing workpieces, e.g., microelectronic workpieces, can employ a process indicator that is adapted to change an optical property in response to a planarizing condition. This process indicator may, for example, change color in response to reaching a particular temperature or in response to a particular shear force. In this example, the change in color of the process indicator may be correlated with an ongoing operating condition of the planarizing machine, such as excessive downforce, or correlated with an endpoint of the planarizing operation. Incorporating the process indicator in the planarizing medium, as proposed for select applications, can enable relatively simple, real-time collection of information that can be used to control a planarizing operation.

Abstract: A coolant delivery apparatus for a machine tool wherein the position of the coolant delivery apparatus is controllable such that coolant may be delivered to the machining contact zone of a tool even though the location of the machining zone of the tool may change such as during machining of a workpiece, or from one workpiece to another.

Abstract: A substrate holding apparatus can accurately control temperature of a substrate in a direct manner with a relatively simple arrangement. The substrate holding apparatus has a top ring configured to hold a substrate to be polished and press the substrate against a polishing surface, and an air bag attached to the top ring so as to be brought into contact with a rear face of the substrate. The substrate holding apparatus also has a regulator operable to regulate a temperature control fluid to be supplied into the air bag, and a flow regulating valve operable to regulate a flow rate of the temperature control fluid discharged from the air bag.

Abstract: In a coolant supply method and apparatus for a grinding machine, when an end surface of a workpiece is ground with a grinding wheel end surface of a grinding wheel with coolant being supplied toward a grinding point, a first coolant flow is ejected toward a first position which is on the grinding wheel end surface on an upstream side of the grinding point, and intercepts an air layer rotating to follow the grinding wheel end surface. At the same time, a second coolant flow is ejected toward a second position which is on the grinding wheel end surface and which is closer to the grinding point than the first point, and clings onto the grinding wheel end surface at the second position where the follow air layer has been intercepted by the first coolant flow. Thus, the coolant of a sufficient volume can be supplied to the grinding point where the grinding wheel end surface grinds the end surface of the workpiece.

Abstract: The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

Abstract: The invention relates to a method for machining a workpiece surface, wherein an area to be machined of the workpiece surface is machined under the influence of a polishing operation and wherein, during the machining, the displacement of the area to be machined relative to a reference area rigidly coupled to the workpiece surface is monitored by means of interferometry. The invention further relates to a machining apparatus, comprising a polishing tool and a measuring tool, while the measuring tool comprises an interferometer. Preferably, the polishing tool comprises a fluid jet polishing device.

Abstract: Double-sided polishing machine with an upper and a lower working disc, each comprising a polishing disc and a carrier disc. The working disc are co-axially arranged and rotatable relative to each other, a polishing gap being formed between the polishing discs. Said workpieces are machined in the polishing gap. A temperature control device being at least provided for the upper working disc by which a temperature control fluid can be conveyed through passages in the upper working disc. A spacing measuring device being associated with the working discs which measure the spacing in the polishing gap (gap width ?) at two radial spaced points of the polishing gap.

Abstract: The heaters in the respective thin-film magnetic head in the bar are electrically connected to its neighbors, and a variable resistor is connected to each of the heaters in parallel. The resistance of each of the variable resistors is varied depending on the amount that the medium-opposing surface (ABS) of the thin-film magnetic head is to project. Also, the medium-opposing surface of the thin-film magnetic head in the magnetic head bar is polished while energizing all the heaters by the same power supply.

Abstract: A nozzle assembly and method is configured to apply coherent jets of coolant in a tangential direction to the grinding wheel in a grinding process, at a desired temperature, pressure and flowrate, to minimize thermal damage in the part being ground. Embodiments of the present invention may be useful when grinding thermally sensitive materials such as gas turbine creep resistant alloys and hardened steels. Flowrate and pressure guidelines are provided to facilitate optimization of the embodiments.

Abstract: In one embodiment, a CMP pad is conditioned by repeatedly cycling the CMP pad between a first temperature and a second temperature higher than the first temperature to eliminate at least one crystalline area in the CMP pad.

Abstract: The invention is an apparatus used for cleaning equipment including extremely high voltage energized electrical equipment using a dry ice blasting stream as the cleaning agent. The apparatus comprises a cleaning wand and a heating mechanism for impeding the formation of condensation and/or frost on the outer surface of the wand, thereby enabling the wand to operate for prolonged periods of time.

Abstract: An apparatus is provided for polishing a substrate. The apparatus includes a polishing pad configured to traverse from at least a first point to a second point. A first sensor is located near the first point and oriented so as to sense an incoming temperature of the polishing pad. A second sensor is located near the second point and oriented so as to sense an outgoing temperature of the polishing pad. A difference between the incoming temperature and the outgoing temperature is then used to determine endpoint of a polishing operation.

Abstract: An apparatus and method for stopping mechanical and chemical-mechanical polishing of a substrate at a desired endpoint. In one embodiment, a polishing machine has a platen, a polishing pad positioned on the platen, and a polishing medium located at a planarizing surface of the polishing pad. The polishing machine also has a substrate carrier that may be positioned over the planarizing surface of the polishing pad, and at least one heat sensor is coupled to the polishing machine to detect heat at a front side of the substrate. The heat sensor preferably measures a temperature of a component sensitive to heat at the front side of the substrate, such as the planarizing surface of the polishing pad, the back side of the substrate, or the byproducts produced by polishing the substrate.