Abstract: A temperature controlling system for use in a chemical mechanical planarization (CMP) system having a linear polishing belt, a carrier capable of applying a substrate over a preparation location over the linear polishing belt is provided. The temperature controlling system includes a platen having a plurality of zones. The temperature controlling system further includes a temperature sensor configured determine a temperature of the linear polishing belt at a location that is after the preparation location. The system also includes a controller for adjusting a flow of temperature conditioned fluid to selected zones of the plurality of zones of the platen in response to output received from the temperature sensor.

Abstract: Machines with solution dispensers and methods of using such machines for chemical-mechanical planarization and/or electrochemical—mechanical planarization/deposition of microelectronic workpieces. One embodiment of such a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece. The carrier assembly can further include a drive assembly that manipulates the head. The machine can also include a solution dispenser separate from the head. The solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support. The fluid discharge unit is configured to discharge a planarizing solution onto a plurality of separate locations across the pad.

Abstract: The present invention relates to a machine tool system and a machining liquid supply device for machining a workpiece by a tool such as a grinding wheel or a milling cutter, and solves the problem of how to supply the machining liquid optimally to an area where the tool engages with the workpiece. In order to solve this problem, the present invention is so configured that during the machining of a workpiece with a tool (T) detachably mounted on a spindle (12) of a machine tool (MT), the machining liquid supply device (18) for supplying a machining liquid to a machining area of the tool (T) is provided with an opening end at the forward end of a machining liquid supply nozzle (20), and can give the movements in a radial direction and a circumferential direction through 360° with respect to the axis of the spindle (12) about the spindle head (12) having the spindle (12) through a rotational supporting body (16) by means of linear movement means (80) and rotating movement means (30), respectively.

Abstract: A chemical mechanical polishing (CMP) apparatus with temperature control. The apparatus controls circular zone temperature of the wafer. The CMP apparatus comprises a platen; a carrier holding a wafer against the platen; a guide ring disposed at the rim of the carrier to mount the wafer on the carrier; and a heater disposed in the guide ring, in the carrier, or used to heat the slurry. The temperature of the heater is set between 20° C. and 60° C. Thus, the polishing rate at the edge is improved, and the polishing difference between the edge and the center of the wafer is reduced.

Abstract: Apparatus and methods of automated wafer-grinding using grinding surface position monitoring. In one embodiment, an apparatus for grinding a working surface includes a grinding surface engageable with at least a portion of the working surface, and a feed mechanism that controllably adjusts a position of the grinding surface. The apparatus further includes a position sensor that senses a position of the grinding surface along an axis approximately normal to the working surface and a controller that receives a position signal from the position sensor and transmits a control signal to the feed mechanism in response to the position signal. In alternate embodiments, the position sensor may be an acoustic sensor, an optical sensor, or another type of sensor. The grinding surface may include a grinding material suspended in a binder, the grinding material being worn during grinding.

Abstract: An apparatus and method for detecting a process endpoint. The method includes receiving a first data signal and a second data signal and combining the first data signal and the second data signal to generate a combined data signal. The method also includes detecting a peak in the combined data signal, wherein the peak indicates the process endpoint. The apparatus includes a data collection unit capable of receiving a plurality of data signals and a signal analysis unit. The signal analysis unit is capable of combining the plurality of data signals received through the data collection unit to generate a combined data signal and identifying a peak in the combined data signal indicative of the process endpoint.

Abstract: An improved and new process for separating a substrate from a wetted polishing pad in a CMP apparatus has been developed. Following CMP the polishing pad is wetted with a low surface tension liquid and the substrate is moved across the surface of the polishing pad to cause the interface between the substrate and the polishing pad to be wetted with the low surface tension liquid. The force required to cause separation of the substrate from the polishing pad wetted with said low surface tension liquid is reduced by a factor of about 10 to 30% and the breakage of fragile semiconductor wafer substrates during the unloading operation is markedly reduced. Suitable low surface tension liquids are water at a temperature between about 50° C. and 80° C., or solutions of water with long chain surfactants, such as poly-acrylate, poly-vinyl alcohol, butanol, pantanol or isopropol alcohol.

Abstract: A polishing platen of a chemical mechanical polishing apparatus and a planarization method using the same are disclosed. The polishing platen is formed of a first plate connected to a second plate. By independently controlling a thermal expansion of the first and second plates, a shape of an upper surface of the platen can be controlled and selectively altered. This allows a more precise polishing process and formation of a more uniform wafer. In one embodiment, the first and second plates, each have a different thermal expansion coefficient.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A polishing apparatus can strictly control the degree of material removal by providing close control over the operating temperature in the polishing table (12). The polishing apparatus has a polishing table (12) and a workpiece holder (14) for pressing a workpiece (W) towards the polishing table (12). The polishing table (12) has a polishing section (30) or a polishing tool attachment section at a surface thereof and a thermal medium passage (32) formed along the surface. The thermal medium passage (32) has a plurality of temperature adjustment passages provided respectively in a plurality of temperature adjustment regions which are formed by radially dividing a surface area of the polishing table (12).

Abstract: A method for controlling a polishing characteristic of a polishing pad used in planarization of a substrate. The method preferably includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface soften and/or become more soluble, and/or material comprising the planarizing surface attains approximately its glass transition temperature. The waste matter accumulations and/or a portion of the planarizing surface are in this way softened and more easily removed. The planarizing surface is either heated directly by directing a flow of heated planarizing liquid or heated air to the planarizing surface or indirectly by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: A spindle device equipped with a combined externally pressurized gas-magnetic bearing assembly, and a machining apparatus utilizing the spindle device. The spindle device is capable of accomplishing a high speed rotation with high rotational precision and includes a main shaft (4) rotatably supported by the combined bearing assembly (6 to 9), an electric current detecting device (15 to 18) disposed in a spindle controller (3) for detecting a current supplied to electromagnets of the combined bearing assembly (6 to 9). Also provided is a machining status determining device (19) for determining the machining status in reference to the current detected by the current detecting device (15 to 18). The machining status may be an indication of the extent to which a machining tool is impaired.

Abstract: A method for enhancing the material removal rate of an upper layer of a wafer in chemical mechanical planarization (CMP) systems is provided. The method includes applying radiation to an amount of slurry before the slurry is applied to the upper layer of the wafer. In one example, the method also includes providing a polishing pad and a carrier head configured to hold the wafer. The method further includes creating a mechanical polishing interface between the polishing pad, the upper layer of the wafer, and the radiation exposed slurry by bringing the polishing pad and the carrier head into contact.

Abstract: A material with a mesh of fibers and a binder material holding the fibers in the mesh can be used on a carrier head or a polishing pad. A polishing apparatus can include a pad cleaner with nozzles to direct jets of cleaning fluid onto the polishing pad and a brush to agitate a surface of the polishing pad.

Abstract: The instant invention provides a vibration insensitive method of precisely polishing an object. The method includes the steps of providing an object to be polished, applying a conductive material to a non-electrical current conductive surface of the object, removing a portion of the object and the conductive material through polishing, and measuring an electric current flowing through the conductive material to monitor a progress of the polishing. Advantageously, the method does not require the polishing process to be interrupted to monitor the progress of the polishing. In fact, since the progress is measured as a function of resistance/electrical current, the progress is measured with an accuracy and precision related to each individual turn of a polishing pad. Advantageously, the instant method is remarkably vibration insensitive and is practical for the simultaneous, automatic, and precise, polishing of monolithic objects.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: A chemical mechanical polishing apparatus is described, which includes a platen, a polishing pad that is attached to the platen, and a means for adjusting the temperature of the polishing pad.

Abstract: A process for forming a semiconductor wafer which is single side polished improves nanotopology and flatness of the polished wafer. The process reduces the effect of back side surface features, such as edge ring phenomena and back side laser marks, on nanotopology, thereby improving oxide layer uniformity for chemical/mechanical planarization (CMP) processing, and flatness on the polished front side of the wafer after polishing. The wafer is mounted on a polishing block by wax. The edge ring causes certain deformation and stress in the wafer upon mounting, which is held by the wax. After mounting, the wax is heated to allow the wafer to relax, removing the stress, without degrading the bond of the wafer to the polishing block. The wafer is polished and removed from the polishing blocks. The polished surface substantially retains its shape after being de-mounted from the block.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: A polishing apparatus can improve the uniformity of thickness within a workpiece or reduce thickness variation between serially polished workpieces. The polishing apparatus comprises a polishing unit having a polishing tool for providing a polishing surface and a workpiece holding device for holding the workpiece. A polishing solution or liquid supplying device is provided for supplying a polishing solution or liquid into a polishing interface between the surface of the workpiece and the polishing surface. A temperature of the polishing interface is controlled according to at least an ambient temperature of a polishing space surrounding the polishing unit, as a variable parameter.

Abstract: In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.

Abstract: The present invention provides a wafer polishing apparatus capable of controlling the polishing quantity accurately.

Abstract: A repair machine for compact disk is used for cleaning, maintaining, and repairing compact disks. The processing procedure is basically a mechanical method by: placing a scratched compact disk on a CD turntable of the repair machine, grinding it with a grinding wheel and dripping grinding agent on the grinding wheel continuously. The grinding agent is classified in three categories: coarse, middle, and fine (polishing), for trimming scratch to renew a marred compact disk.

Abstract: A machining location for machining workpieces, comprising: a machine tool; an enclosure for said machine tool that encloses the entire machine tool within a predetermined space; workpiece storage within said predetermined space for storing workpieces at least prior to being worked on by said machine tool and for subjecting such workpieces when so stored to said machining environment to become oriented thereto. The machining location is mounted and supported to be separate from and independent of said machine tool so that vibrations are not transmitted from said enclosure to said machine tool. The machining location further comprises ambient environment controls for effecting control of at least the temperature of the air within said predetermined space.

Abstract: Areas of different temperatures are provided on a semiconductor wafer to improve uniformity in polishing rates during CMP.

Abstract: A method is described for temperature endpointing of a CMP process. A temperature sensor (110) detects temperature changes when the CMP polishing process transitions between different materials.

Abstract: A method and apparatus for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus includes a sensor connected to the semiconductor substrate or a movable portion of the planarizing machine. The apparatus further comprises a display spaced apart from the sensor and a wireless communication link coupled between the sensor and the display to transmit a signal from the sensor to the display. The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor may also detect light reflected from a reflective surface of a substrate that is used to calibrate the planarizing machine.

Abstract: A method of conserving a facility delivered to a machine during the machine's idle mode is herein described. In one embodiment, the method is directed to a method for conserving coolant water delivery to a semiconductor wafer grinding machine. The system monitors the status of the grinder to determine whether the grinder is active or idle. After the system determines the grinder has entered idle mode, the system reduces the flow of water to the machine. In one embodiment, the flow is simply reduced while, in another embodiment, the flow is terminated. A delay circuit in the system may delay the reduction of the flow rate until some point after entering idle mode. Periodically throughout the idle mode, the system increases the flow of coolant water to the grinder to ensure the temperature of all grinder components remains consistent. The duty cycle of the coolant flow may be adjusted to optimize water conservation and machine readiness.

Abstract: A method and an apparatus for controlling slurry temperature in a polishing machine, such as in a chemical mechanical polishing machine, are disclosed. In the method, an ambient temperature slurry is first provided to the surface of a polishing pad, the polishing process is then started with the polishing pad being rotated and intimately engaging a substrate mounted in a polishing head. By using at least two temperature sensors, the temperature of the slurry dispensed and the temperature of the polishing head are determined and sent to a temperature controller which in turn sends a signal to a heater for heating a slurry supply such that the temperature of the slurry being fed is the same as the temperature of the polishing pad. A heated slurry solution at substantially the same temperature of the polishing pad is then fed to the polishing pad for continuing the polishing process.

Abstract: A substrate with a first layer disposed on a second layer is chemically mechanically polished. A polishing endpoint detection system generates a signal that is monitored for an endpoint criterion. The polishing rate of the substrate is reduced when the bulk of the first layer has been removed but before the second layer is exposed. For example, the polishing rate is reduced when the polishing time approaches an expected polishing end time but before the endpoint criterion is detected. Polishing stops once the endpoint criterion is detected after the underlying layer has been exposed.

Abstract: A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, and a polishing head selectively supporting a semiconductor wafer and holding a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer face; and a controller selectively adjusting one of a plurality of adjustable polishing parameters during polishing of the wafer.

Abstract: A cooling apparatus includes a lubricating fluid tank, a lubricating fluid nozzle, a lubricating fluid regulating device, a cooling fluid tank, a cooling fluid nozzle and a cooling fluid regulating device. The cooling fluid nozzle supplies cooling fluid to the workpiece to enhance cooling effect of the cooling fluid. The lubricating fluid nozzle feeds lubricating fluid to the machining zone to prevent frictional heat generated in the machining zone from raising temperature of the workpiece. Since an appropriate amount of the lubricating fluid within the range helps the cooling effect of the cooling fluid, a quantity of the cooling fluid is reduced within the minimum range of the cooling fluid. A consumption of the lubricating fluid is much smaller than that of the cooling fluid. Therefore, a total amount of the fluids is extremely reduced. The range of flow rates of the lubricating fluid has an upper limit that is preferably approximately 100.0 cm3/h or smaller in 1.

Abstract: A method and apparatus for controlling a polishing characteristic of a polishing pad used in planarization of a substrate. The method preferably includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface soften and/or become more soluble, and/or material comprising the planarizing surface attains approximately its glass transition temperature. The waste matter accumulations and/or a portion of the planarizing surface are in this way softened and more easily removed. The planarizing surface is either heated directly by directing a flow of heated planarizing liquid or heated air to the planarizing surface or indirectly by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.

Abstract: A system and method for detecting process endpoint in CMP is presented which monitors the progression of chemical activities that take place from the chemical reaction that occurs at the wafer surface during polishing. In order to monitor the progression of chemical activities taking place from the chemical reaction, a surface plasmon resonance sensor acts as a conducting surface which supports surface plasmon resonance.

Abstract: An apparatus and process for chemical-mechanical polishing an edge of a semiconductor wafer using a heated polishing pad and a heated liquid chemical slurry. The apparatus includes a rotatable drum having a cylindric outer surface, a heatable mat positioned around the outer surface of the drum, and a polishing pad in generally parallel arrangement with the mat. A wafer holder, a container of liquid slurry, and a slurry delivery system are also included. The process includes the steps of heating a liquid slurry to an elevated temperature and applying heat to the polishing pad from an underside of the polishing pad to elevate the temperature of the polishing pad. A peripheral edge of a semiconductor wafer is engaged against a polishing side of the polishing pad, and a relative motion is effected between the wafer and the pad while simultaneously dispensing the heated slurry onto a region where the edge of the wafer engages the pad.

Abstract: An apparatus for polishing wafers includes a polishing table with a heating device. A conduit connects a tank holding a liquid polishing agent to a distributor for feeding the liquid polishing agent to the polishing table. A heat exchanger is disposed along the conduit between the tank and the distributor for heating the liquid polishing agent. The heat exchanger is independent of said heating device. A method for heating a polishing agent is also provided.

Abstract: A method of polishing a first layer of a semiconductor wafer down to a second layer of the semiconductor wafer is disclosed. One step of the method includes polishing the first layer of the semiconductor wafer with a polishing surface having a chemical slurry positioned thereon. The polishing step causes an infrared spectrum to be emitted through the semiconductor wafer. Another step of the method includes detecting a rate of change of intensity level of the infrared spectrum and generating a control signal in response thereto. The method also includes halting the polishing step in response to generation of the control signal. Polishing systems are also disclosed which determine a polishing endpoint for a semiconductor wafer based upon an infrared spectrum generated due to a chemical slurry reacting with the semiconductor wafer.

Abstract: Apparatus and method for producing more uniformly polished wafers using chemical mechanical polishing (CMP). The present invention recognizes that wafer temperature is important in achieving uniform polishing. Mechanisms are disclosed for regulating carrier and carrier plate temperatures and thereby regulating the temperature of an attached wafer. Mechanisms are also disclosed that insulate a wafer, at least to some extent, from undesired heat sinks or heat sources.

Abstract: A temperature compensating unit is coupled to a linearly moving belt of a polisher for adjusting the temperature of the belt, which temperature is measured by a sensor situated proximal to the belt.

Abstract: The first present invention provides an apparatus for activating a polishing liquid including polishing particles and hydrogen peroxide for carrying out a chemical mechanical polishing method to a surface of a wafer to be polished, wherein the apparatus comprises an ultraviolet ray irradiation system for an irradiation of an ultraviolet ray to the polishing liquid.

Abstract: The invention, in a first aspect, includes a method and apparatus for detecting the endpoint in a chemical-mechanical polishing process. The first aspect includes a chemical-mechanical polishing tool modified to receive a first and a second data signal; combine the first and second data signals to generate a combined data signal; and detect a peak in the combined data signal, wherein the peak indicates the process endpoint. In a second aspect, the invention is a method and an apparatus for detecting the endpoint in a chemical-mechanical polishing process. The second aspect includes an apparatus implementing a method in which a data signal is received. The data signal is analyzed to detect a peak indicative of the process endpoint in the received data signal.

Abstract: The invention relates to a workhead for mechanical working of materials. This invention is directed to metal working machines and is adaptable for use in the mechanical working of metals and plastics, involving the use of liquid lubricants and/or coolants. The technical result achieved by implementing the invention comprises an improvement in the efficiency of the cavitation treatment of a liquid lubricant and/or coolant, which secures the dispersion of a solid lubrication in aqueous solutions, an increase in the stability of water-in-oil emulsions, decomposition of a liquid lubricant and/or coolant and a decrease of viscosity, an improvement in corrosion resistance, reduction in a tool wear and, simultaneously, an improvement in the quality of a working surface. The apparatus comprises a housing (1), inside which is fitted a main oscillator (2), to which is connected a tool (4) through the intermediary of an extension piece (3).

Abstract: The present invention is an improved apparatus and process for chemical mechanical polishing layers which have a low dielectric constant (K). The present invention lowers the temperature of the material having a low dielectric constant and then polishes that material at the lower temperature. By lowering the temperature of the low K material the hardness or stiffness of the material is improved making it easier to polish and resulting in a more planar surface.

Abstract: A process and device for polishing semiconductor wafers has at least one side of at least one semiconductor wafer pressed against a polishing plate, over which a polishing cloth is stretched. The semiconductor wafer and the polishing plate are moved relative to each other to polish the wafer. During the polishing, the semiconductor wafer passes over at least two regions on the polishing plate, which regions have defined radial widths and are at different temperatures. Temperature-control means are provided in the polishing plate, with the aid of which the number, the radial widths and the temperatures of the regions are fixed before the semiconductor wafers are polished.

Abstract: A compact and simple lapping apparatus in which, even if projections and depressions are formed in the circumferential direction on the top surface of a lapping plate, a workpiece and a bar are hard to damage and the polished surface of the workpiece is kept in good condition. This apparatus is provided with at least one lapping jig in which a workpiece is placed on the rotating top surface of the lapping plate. Further, a lapping head adapted to be able to rotate only in a direction on the lapping plate is attached to this lapping jig. This lapping head is equipped with a workpiece and at least two dummy work materials (or stock) so that these dummy works compose (as-polished) surfaces, which should be polished, together with the workpiece. Moreover, a device for detecting the remaining part of the workpiece to be lapped is provided on the workpiece.

Abstract: A rotatable platen has a polishing pad adhered to the top surface thereof. A carrier for holding a substrate and a slurry supply pipe for supplying an abrasive slurry onto the near-center region of the polishing pad are provided above the polishing pad. Two lamps for partially irradiating the surface of the polishing pad with visible light or infrared light are provided at respective locations above the polishing pad and upstream of the carrier in the direction of rotation of the platen. Of the area of the polishing pad in contact with the substrate, a region closer to the center of rotation of the polishing pad and a region farther away therefrom are heated by the two lamps.

Abstract: An apparatus and method for stopping mechanical and chemical-mechanical polishing of a substrate at a desired endpoint. In one embodiment, a polishing machine has a platen, a polishing pad positioned on the platen, and a polishing medium located at a planarizing surface of the polishing pad. The polishing machine also has a substrate carrier that may be positioned over the planarizing surface of the polishing pad, and at least one heat sensor is coupled to the polishing machine to detect heat at a front side of the substrate. The heat sensor preferably measures a temperature of a component sensitive to heat at the front side of the substrate, such as the planarizing surface of the polishing pad, the back side of the substrate, or the byproducts produced by polishing the substrate.

Abstract: Heat is transferred between a linear CMP belt and an adjacent heat transfer source, providing a predetermined lateral temperature distribution across the belt. Temperature sensors generate feedback signals to control the heat transfer sources. Alternatively, process monitoring sensors provide feedback signals. The heat transfer source can include multiple selectively controllable individual heat transfer sources having differing temperatures, which can be above or below ambient temperature. The mechanism of heat transfer can include one or more of convection, conduction, and radiation. The configuration provides substantial flexibility to establish and maintain selective non-uniform temperature distributions across the polishing belt. This in turn permits precise control and stability of the polishing process. Heat transfer sources can include pulleys, slurry dispensers, polishing pad conditioners or conditioner back supports, fluid nozzles, and sealed fluid cavity belt supports.

Abstract: A method and apparatus for controlling a polishing characteristic of a polishing pad used in planarization of a substrate. The method preferably includes controlling the temperature of a planarizing surface of the polishing pad so that waste matter accumulations on the planarizing surface soften and/or become more soluble, and/or material comprising the planarizing surface attains approximately its glass transition temperature. The waste matter accumulations and/or a portion of the planarizing surface are in this way softened and more easily removed. The planarizing surface is either heated directly by directing a flow of heated planarizing liquid or heated air to the planarizing surface or indirectly by heating a support surface beneath the polishing pad or by heating the air proximate to the polishing pad.