Abstract: A computer program product for process control in chemical mechanical polishing is described. The product includes instructions to cause a processor to receive a measurement of an initial pre-polishing thickness of a layer of a substrate from a metrology station, determine a value for a parameter of an endpoint algorithm from the initial thickness of the substrate, receive a monitoring signal generated from monitoring in-situ polishing of the substrate, process the monitoring signal to detect a signal feature indicating a final or intermediate endpoint and send instructions to stop polishing when an endpoint criterion is detected using the endpoint algorithm with the determined value for the parameter.

Abstract: A multiple pass machining method for removing excess flash from a formed part to approximate a desired, curved profile on the formed part includes moving the part relative to a grinder in p straight passes, wherein a first pass removes a portion of flash is at an angle E relative to a stack axis of the part and each remaining straight pass is at an incremental angle F. A portion of the flash is thereby removed to approximate a master profile on an abraded edge of the part.

Abstract: A chemical mechanical polishing apparatus and method can use an in-situ monitoring system. A measurement of a position of a carrier head and a sinusoidal first function can be used to define a second function that associates measurements from the series with positions on the substrate. For each measurement in a series from the in-situ monitoring system, the second function can be used to determine a position on the substrate where the measurement was taken. In addition, a measurement of the position of the carrier head, a time when the measurement of the substrate property is made, and a phase correction representing lag resulting from a processing delay in generating the measurement of the position of the carrier head can be used in determining a position on the substrate where a measurement of a substrate property was taken.

Abstract: An automatic machine for grinding the borders of glass panes, particularly the edges, arranged preferably vertically but applicable to any other arrangement, comprising devices which allow the machining of glass panes, which are notoriously fragile and have an irregularly cut or even contoured perimeter by means of a rigid tool, such as a diamond grinding wheel, by acting simultaneously on the two edges along the perimeter of the pane. In particular, the machine comprises a feeler element and feedback circuits for symmetrically edging the glasspane and, advantageously, for keeping unchanged the perimetric profile of the pane.

Abstract: A slider burnishing method is introduced, in which the slider is brought into a predetermined surface contact with the rotating disk for a specified period. The predetermined surface contact end the specified time period are selected together with the surface condition of the rotating hard disk, such that smoothened slider surface is abrasively formed. The smoothened slider surface is substantially parallel to the disk surface and thus provides reduced contact pressure during eventual operational contacting. In addition, the smoothened slider surface creates a constant gap together with the disk surface, which enhances the aerodynamic properties of the air bearing surface and stabilizes a small fly height.

Abstract: Methods and apparatus are provided to provide a substantially uniform layer thickness above a wafer contour as the wafer rotates and is traversed past a pre-planarization tool. The tool has a shank defining an axis of rotation, and a planarization member coupled to the shank has a hook-shaped section supporting a pre-planarization surface spaced by an at-rest-distance from the axis of during an at-rest condition of the shank. The hook-shaped section has a modulus of elasticity selected so that upon rotation, the hook-shaped section flexes and moves the pre-planarization surface to rotation-distances spaced from the axis in response to a velocity of rotation of the hook-shaped section around the axis in a range of velocities. As the tool rotates, metrology intermittently directly senses the layer thickness and controls the velocity of rotation so the rotation-distances have values in excess of a value of the at-rest-distance.

Abstract: A CNC apparatus has a memory configured to compensate for offsets in a pivot point. The machine tool has a head, a pivot point, a spindle, a table, and at least four axes including an X-axis, a Y-axis, a Z-axis, and a C-axis. A method for calibrating the CNC apparatus for controlling the machine tool includes placing an artifact of known height on the table, placing a plug having a known diameter on the spindle and touching the plug to the artifact in a plurality of orientations of the plug and in a plurality of locations of the plug and the artifact to determine uncalibrated X and Y pivot point locations at a plurality of orientations of the spindle. The uncalibrated X and Y pivot point locations are used to determine and store values in the memory of the CNC apparatus to compensate for offsets in the pivot point.

Abstract: Systems and methods control abrading operations of an abrading machine by sensing characteristics of an abrading article installed on the abrading machine. When a problem is discovered by sensing the article, appropriate actions may be taken. As one example, the abrading article may be sensed to determine whether the abrading article has been installed with an abrasive side facing the wrong direction. An alert allows an operator to reinstall the article. As another example, the abrading article may be sensed to determine whether splicing tape is present to hold two pieces of abrading tape together. The article may be advanced until the splicing tape is beyond an abrading zone. As another example, the abrading article may be sensed to determine whether the abrading article has stopped moving while the article drive is advancing because the article has broken. An alert allows an operator to repair the break.

Abstract: A tool for gripping ophthalmic lenses including a vacuum gripper, a shaft associated with said vacuum gripper, the shaft having two ends and being slidably attached at one end thereof to a support structure, a resilient member which biases the vacuum gripper in a direction away from said support structure and a locking member which locks the shaft in a desired position during a lens gripping operation. Another embodiment of the present invention includes a lens hold down mechanism for holding lenses in a lens tray. Another embodiment of the present invention includes an electronic communications scheme for a robotic manufacturing operation. Another embodiment of the present invention includes an ophthalmic lens manufacturing cell layout wherein ophthalmic edging machines have an opening that faces away from a robotic arm. Another embodiment of the present invention includes an arrangement for holding an ophthalmic edging machine within an ophthalmic manufacturing cell.

Abstract: A polishing method includes the steps of: (a) polishing a to-be-polished object by moving an abrasive cloth relative to the to-be-polished object while pressing the to-be-polished object against the abrasive cloth; and (b) pressing a dressing member against the abrasive cloth moving relative to the to-be-polished object with the to-be-polished object pressed against the abrasive cloth and relatively moving the abrasive cloth and the dressing member, thereby dressing the abrasive cloth while polishing the to-be-polished object. The difference between the torque current of a motor in the step (a) and the torque current of the motor in the step (b) is determined, and when the determined difference falls below a previously set value is detected.

Abstract: This disclosure provides methods and apparatus for predictably changing the thickness of a microfeature workpiece. One implementation provides a planarizing method in which a first workpiece is planarized in first and second planarizing processes and a total change in thickness is determined. This thickness change is modified by a thickness offset associated with the second planarizing process and a material removal rate is calculated from this modified thickness change and the time on the first planarizer. A thickness of a second microfeature workpiece is measured and a target thickness of material to be removed is determined. A target planarizing time is then determined as a function of the target thickness reduction and the material removal rate.

Abstract: When a forming a bevel on a lens, the value of the bevel curve is calculated based on the value of the curve of the concave face, a reference axis of the bevel curve is determined to be in the same direction as the curvature of the concave face, a reference position on the peripheral edge of the lens in the first portion having the minimum thickness is determined based on the thickness of the first portion, a correction for the initial reference axis of the bevel curve is obtained, an angle of inclination from the direction of the initial reference axis of the bevel curve is obtained based on the correction and the locus of the bevel is determined based on the value of the bevel curve, the reference position and the angle of inclination.

Abstract: When a forming a bevel on a lens, the value of the bevel curve is calculated based on the value of the curve of the concave face, a reference axis of the bevel curve is determined to be in the same direction as the curvature of the concave face, a reference position on the peripheral edge of the lens in the first portion having the minimum thickness is determined based on the thickness of the first portion, a correction for the initial reference axis of the bevel curve is obtained, an angle of inclination from the direction of the initial reference axis of the bevel curve is obtained based on the correction and the locus of the bevel is determined based on the value of the bevel curve, the reference position and the angle of inclination.

Abstract: A wafer based APC method for controlling an oxide (Cu, or TaN) polish step is described and combines a feed forward model that compensates for incoming wafer variations with a feed backward model which compensates for CMP variations. The method is geared toward minimizing Rs 3? variations. A Rs target value is inputted with metrology data from previous processes that affects the width and thickness of the copper layer. A copper thickness target and polish time for the first wafer is determined. Post CMP measurement data of the first wafer is used to modify the polish rate with a disturbance factor and an updated polish time is computed for subsequent wafers. The CMP recipe for each wafer is adjusted with metrology data and post CMP measurements. The APC method is successful in controlling copper Rs variations for the 90 nm technology node and is independent of copper pattern density.

Abstract: Both a grinder system and a corresponding grinding method are based on a module, embodied preferably as a program or program segment, which, preferably automatically, defines the geometry of the corner cutting edge and the corner cutting face of a metal-cutting tool on the basis of predetermined peripheral conditions. The axial rake angle of the face-end cutting edge and the axial rake angle of the circumferential cutting edge as well as a desired effective profile can serve as the predetermined peripheral conditions. Further peripheral conditions may be a smooth transition of the cutting faces between the face-end chip cutting face, corner cutting face and circumferential cutting face. Tools are obtained that have a long service life and with which at the same time good machining quality can be achieved.

Abstract: A method for inspecting the uniformity of the pressure applied between a conditioner and a polishing pad on a chemical mechanical polisher. A sheet of pressure sensitive material is placed between the conditioner and the polishing pad, and the conditioner is lowered onto the sheet of pressure sensitive material. A desired degree of pressure is applied between the conditioner and the polishing pad, thereby creating an impression in the sheet of pressure sensitive material, and the conditioner is lifted from the sheet of pressure sensitive material. The sheet of pressure sensitive material is inspected to determine the uniformity of the pressure applied between the conditioner and the polishing pad.

Abstract: An eddy current sensor and a method for detecting the thickness of a film formed on a substrate. The eddy current sensor, which is capable of stable operation, is operable to accurately detect a polishing endpoint. The eddy current sensor detects the thickness of a conductive film from a change in an eddy current loss generated in the conductive film. The eddy current sensor comprises a sensor coil for generating an eddy current in the conductive film, and an active element unit connected to the sensor coil for oscillating a variable frequency corresponding to the eddy current loss. The sensor coil and active element unit are integrated to form the eddy current sensor. Alternatively, the eddy current sensor comprises a sensor coil for generating an eddy current in the conductive film, and a detector for detecting a change in the thickness of the conductive film from a change in a resistance component in an impedance formed by the sensor coil and conductive film.

Abstract: To prepare a surface with a surface preparation device, an apparatus including a mount, a platform, and a suspension system is utilized. The mount supports and positions the surface preparation device. The platform moves the apparatus. The suspension system is disposed between the mount and the platform and controls an amount of force pressing the mount towards the surface. The suspension system and mount are operable to position the surface preparation device in contact with the surface.

Abstract: A system, method, and computer program product for chemical mechanical polishing a substrate in which initially a plurality of predetermined pressures are applied to a plurality of regions of the substrate. A plurality of portions of the substrate are monitored during polishing with an in-situ monitoring system. If the difference in thickness between two portions of the substrate exceeds a predetermined threshold, a plurality of adjusted pressures are calculated in a closed-loop control system, and the plurality of adjusted pressures are applied to the plurality of regions of the substrate. The predetermined threshold includes an initial threshold for the start of the polishing process and a second threshold for a period of polishing after the start of the polishing process.

Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: Systems and methods for monitoring characteristics of a polishing pad used in polishing a micro-device workpiece are disclosed herein. In one embodiment, a method for monitoring a characteristic of a polishing pad includes applying ultrasonic energy to the polishing pad and determining a status of the characteristic based on a measurement of the ultrasonic energy applied to the polishing pad. In one aspect of this embodiment, applying ultrasonic energy includes applying ultrasonic energy from a transducer. The transducer can be carried by a conditioner, a fluid arm, a micro-device workpiece carrier, or a table. In another aspect of this embodiment, determining the status of the characteristic includes determining a thickness, density, surface contour, roughness, or texture of the polishing pad.

Abstract: A substrate processing apparatus is used for removing surface irregularities occurring on a peripheral portion (a bevel portion, an edge portion, and a notch) of a substrate, such as a semiconductor wafer, and films deposited as a contaminant on the peripheral portion of such a substrate. The substrate processing apparatus includes an edge-portion polisher for pressing a polishing tape against an edge portion of a substrate and causing relative movement between the polishing tape and the substrate to polish the edge portion of the substrate, and a bevel-portion polisher for pressing a polishing tape against a bevel portion of the substrate and causing relative movement between this polishing tape and the substrate to polish the bevel portion of the substrate.

Abstract: A camera unit is arranged opposite a grinding surface. While moving the focal position of the camera unit in a direction perpendicular to the grinding surface relative to the grinding surface of the grinding tool, a control unit causes the camera unit to pickup images of the grinding surface at a plurality of focal positions. Then, an already prepared basic image pattern of abrasive gains is compared with the image data obtained at the plurality of focal positions by the image pickup operation. As a result of the comparison, image data approximate to the basic of the focal position at which the detected image data was obtained.

Abstract: A differential pressure application apparatus is configured to apply different amounts of pressure to different locations of a substrate, such as a semiconductor device structure. The apparatus may be used during polishing or planarization processes. The apparatus includes pressurization structures that may be moved independently from one another. An actuator may control the amount of force or pressure applied by each pressurization structure to the surface of the substrate. Systems including the pressure application apparatus, as well as differential pressure application methods and polishing methods are also disclosed.

Abstract: The invention provides a polishing pad substrate comprising a copolymer, wherein the copolymer has at least one hydrophilic repeat unit and at least one hydrophobic repeat unit. The invention also provides a polishing pad substrate comprising a polymer, wherein the polymer is a modified polymer having at least one hydrophilic unit and at least one hydrophobic unit attached to the polymer chain. The invention further provides a method of polishing a workpiece comprising (i) providing a workpiece to be polished, (ii) contacting the workpiece with a chemical-mechanical polishing system comprising the polishing pad substrate of the invention, and (iii) abrading at least a portion of the surface of the workpiece with the polishing system to polish the workpiece.

Abstract: A test apparatus and method tests a pad conditioner of a chemical mechanical polishing apparatus. The pad conditioner test apparatus includes a main body having a conditioner mounting section that supports the pad conditioner, a conditioner head raising/lowering system that raises and lowers the head of the pad conditioner while the pad conditioner is supported on the test apparatus, and a discrimination section that detects the ability of the head to be raised/lowered in accordance with a program so that the condition of the head can be determined. The test apparatus can prevent various problems that otherwise would occur if a new pad conditioner were directly installed in the chemical mechanical polishing apparatus.

Abstract: A technique for in situ monitoring of polishing processes and other material removal processes employs a quartz crystal nanobalance embedded in a wafer carrier. Material removed from the wafer is deposited upon the surface of the crystal. The resulting frequency shift of the crystal gives an indication of the amount of material removed, allowing determination of an instantaneous removal rate as well as a process endpoint. The deposition on the quartz crystal nanobalance may be controlled by an applied bias. Multiple quartz crystal nanobalances may be used. In a further embodiment of the invention, the quartz crystal nanobalance is used to detect defect-causing events, such as a scratches, during the polishing process.

Abstract: The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored and the CMP process is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof.

Abstract: A chemical mechanical polishing (CMP) method is disclosed in which a torque-based end-point algorithm is used to determine when polishing should be stopped. The end-point algorithm is applicable to situations where a ceria (CeO2) based CMP slurry is used for further polishing, pre-patterned and pre-polished workpieces (e.g., semiconductor wafers) which have a high friction over-layer (e.g., HDP-oxide) and a comparatively, lower friction and underlying layer of sacrificial pads (e.g., silicon nitride pads). A mass production wise, reliable and consistent signature point in the friction versus time waveform of a torque-representing signal is found and used to trigger an empirically specified duration of overpolish. A database may be used to define the overpolish time as a function of one or more relevant parameters.

Abstract: The methods and devices described below allow users of CMP tools to quickly calibrate Spindle Force, Wafer Force, and Retaining Ring Force using mechanisms, load cells, a control computer, and force equations. The control computer can test a variety of pressures in the inflatable seal or the inflatable membrane, depending on the wafer carrier configuration, to determine a unique calibration in real time for the particular wafer carrier that is being tested and used during the polishing process.

Abstract: An apparatus for planarizing is disclosed. A method of planarizing is disclosed. Methods of planarizing using frictional planarizing, chemical planarizing, tribochemical planarizing, CVD planarizing, and electrochemical planarizing and combinations thereof are disclosed. A planarizing chamber can be used. New methods of control are planarizing disclosed. The new planarizing methods and apparatus, can help improve yield and lower the cost of manufacture for planarizing of workpieces having extremely close tolerances such as semiconductor wafers. Cost of manufacture parameters are used for control. Methods to determine preferred changes to process control parameters are disclosed. Cost of manufacture models can be used and are disclosed. Process models can be used and are disclosed. A method to use business calculations combined with physical measurements to improve control is discussed. Use of business calculations to change the cost of finishing semiconductor wafers is discussed.

Abstract: A grinding method comprises steps of simultaneously grinding plural grinding portions of a workpiece by plural grinding wheels T1, T2 moved individually each other, and terminating said grinding by a predetermined grinding wheel T1 prior to a termination of said grinding by the other grinding wheel T2. Whereby, a content of the grinding by each grinding wheel T1, T2 can be same. A grinding condition in each grinding by each grinding wheel T1, T2 can be changed in accordance with a measuring result of the grinding portion in the grinding.

Abstract: Systems and methods for monitoring characteristics of a polishing pad used in polishing a micro-device workpiece are disclosed herein. In one embodiment, a method for monitoring a characteristic of a polishing pad includes applying ultrasonic energy to the polishing pad and determining a status of the characteristic based on a measurement of the ultrasonic energy applied to the polishing pad. In one aspect of this embodiment, applying ultrasonic energy includes applying ultrasonic energy from a transducer. The transducer can be carried by a conditioner, a fluid arm, a micro-device workpiece carrier, or a table. In another aspect of this embodiment, determining the status of the characteristic includes determining a thickness, density, surface contour, roughness, or texture of the polishing pad.

Abstract: Methods system and apparatus, including computer program products, for monitoring polishing a substrate. A polishing pad mounted on a platen, is rotated at a first rotation rate, and a carrier head is rotated at a second rotation rate that is different from the first rotation rate. The carrier head carries a substrate and presses the substrate against the polishing pad. A sequence of data traces is acquired using a sensor mounted in the platen, wherein each data trace results from a separate scan with the sensor along a path across the substrate, and wherein the first and second rotation rates are such that a plurality of paths corresponding to a predetermined number of consecutive scans are substantially evenly radially distributed across the substrate.

Abstract: Techniques for polishing a wafer (10) include closed-loop control. The wafer can be held by a carrier head (100) having at least one chamber whose pressure is controlled to apply a downward force on the wafer. Thickness-related measurements of the wafer can be obtained during polishing and a thickness profile for the wafer is calculated based on the thickness-related measurements. The calculated thickness profile is compared to a target thickness profile. The pressure in at least one carrier head chamber is adjusted based on results of the comparison. The carrier head chamber pressures can be adjusted to control the amount of downward force applied to the wafer during polishing and/or to control the size of a loading area on the wafer against which the downward force is applied.

Abstract: The thickness of a layer on a substrate is measured in-situ during chemical mechanical polishing. A light beam is divided through a window in a polishing pad, and the motion of the polishing pad relative to the substrate causes the light beam to move in a path across the substrate surface. An interference signal produced by the light beam reflecting off the substrate is monitored, and a plurality of intensity measurements are extracted from the interference signal. Each intensity measurement corresponds to a sampling zone in the path across the substrate surface. A radial position is determined for each sampling zone, and the intensity measurements are divided into a plurality of radial ranges according to the radial positions. The layer thickness is computed for each radial range from the intensity measurements associated with that radial range.

Abstract: The present invention is a system for controlling a pad conditioner in a CMP device. The system includes a roughness-sensing device mounted in proximity to a polishing pad. The roughness-sensing device generates an output responsive to a roughness of the polishing pad. A signal-processing unit then generates a roughness value of the polishing pad in response to the output from the roughness-sensing device, and generates a control signal in response to the generated roughness value. Finally, a control device controls motion of the pad conditioner in response to the control signal.

Abstract: Improperly mounted wafer saw blades can damage wafers cut or diced with the blades. Embodiments of this invention employ sensors to measure a distance to the blade to help indicate if the blade is improperly mounted. In one method of the invention, a the distance to the blade face is measured as the blade is rotated and a variance in this measured distance is determined. If the variance is no greater than a predetermined maximum, the blade may be used to cut the wafer. In one apparatus of the invention, a wafer saw include a blade and a sensor. The sensor is adapted to monitor a distance to a face of the rotating blade. A processor coupled to the sensor may indicate if the distance to the face of the blade as it rotates deviates too far from a baseline position of the blade face.

Abstract: A slider is described with a resistive electro-lapping guide (ELG), which is aligned with a structure in the write head such as the throat height or trailing shield thickness and extends from the lapping region through the ABS and is connected to pads on the surface of the slider. In a second embodiment the ELG is disposed entirely in the section of the slider which will be removed by lapping. Another embodiment of the invention is a system for single slider lapping which simultaneously monitors the resistance of the read sensor or a read head ELG and at least one ELG that is aligned with a structure in the write head. A controller uses the resistance information to implement an algorithm which decides when lapping should be terminated.

Abstract: The present invention uses Electronic Lapping Guides (ELG's), which are patterned on every tape head, as servo format verifiers. This is implemented by specifically placing the ELG's at the appropriate locations to match the servo signal track locations and thus be usable to verify the servo format patterns on the formatted tape. According to another aspect of the present invention, tape head components which have faulty read sensors, servo sensors, or write elements which have valid ELG's may be used for the servo format verification purpose.

Abstract: Apparatus for inline measurement of material removal during a polishing or grinding process including: a. a substantially circular rotatable grinding or polishing pad; and b. a sample holder; and c. a sample with a top, a bottom and one or more side surfaces; the sample holder being arranged to hold the bottom surface of the sample in contact with the pad and the sample holder being connected to a moving device to move the sample to a position at least partially over the rim of the pad, during at least a part of the process, the apparatus also including a detecting device for sampling the distances between a reference mark and a target area in the sample and a plane defined by the bottom surface of the sample during the process.

Abstract: A method for testing dies using a machine grooved storage tray with vacuum channels. The method involves drawing a vacuum upon the dies while held in the storage tray and using an automated vision system to map the location of dies in the pockets of the storage tray. Using the map, the storage tray is maneuvered for 5 each individual die in relation to a test probe in order that contact and testing may be made between the discrete die and the test probe.

Abstract: Methods and apparatus to implement techniques for monitoring polishing a substrate. Two or more data points are acquired, where each data point has a value affected by features inside a sensing region of a sensor and corresponds to a relative position of the substrate and the sensor as the sensing region traverses through the substrate. A set of reference points is used to modify the acquired data points. The modification compensates for distortions in the acquired data points caused by the sensing region traversing through the substrate. Based on the modified data points, a local property of the substrate is evaluated to monitor polishing.

Abstract: A chemical mechanical polishing (CMP) apparatus and method for polishing semiconductor wafers utilizes multiple wafer carriers that are transferred to different positions about a polishing pad to polish at least one semiconductor wafer while another semiconductor wafer is being loaded onto or unloaded from one of the wafer carriers. The different positions include multiple polishing positions and one or more loading/unloading positions. In some embodiments, the CMP apparatus is configured such that a semiconductor wafer is polished at a loading/unloading position. The CMP apparatus may also be configured to continuously polish one or more semiconductor wafers while the wafer carriers are being transferred to different positions. Thus, the CMP apparatus can continuously process the semiconductor wafers without significant idle periods. Consequently, in these embodiments, the efficiency of the CMP apparatus is significantly increased.

Abstract: A method and apparatus of in situ monitoring and dispersing unwanted particles in slurry used during CMP polishing. The method includes providing a slurry path, applying to the slurry path a microcavitation field of a first level to detect particles of a predetermined size, applying to the slurry path a microcavitation field of a second level that is capable of dispersing said particles, and after the second applying step, feeding the slurry to a CMP polishing unit. Particle size may be detected and/or the microcavitation field strength may be set according to particle size. In addition, field strength may be calibrated according to levels determined by polystyrene control particles of a known size and/or concentration. A single or dual transducer may apply the microcavitation.

Abstract: Process for bevelling at least one edge (6) of an optical face (3) of an ophthalmic lens (1), in which the successive curvatures of the optical face (3) are plotted in the vicinity of and along the edge (6) to be bevelled. The edge (6) to be bevelled is scanned with a flat light beam (23) forming a linear light spot (24) on the optical face (3), an image of the light spot (24) is simultaneously formed on optical reception elements (26), the successive curvatures of the optical face (3) in the vicinity of the edge (6) are deduced from the successive positions of this image. This process includes a bevelling stage. Then the lens (1) is rotated about an axis (A1), is brought into contact by its edge (6) with a bevelling tool, and the relative positioning of the lens (1) and of the tool is controlled according to the plots produced.

Abstract: Broadly speaking, a method for controlling a chemical mechanical planarization (CMP) process to obtain a desired result is provided. More specifically, the method incorporates a first neural network to estimate a CMP result and a second neural network to tune CMP control parameters used to obtain the CMP result. The second neural network tunes the CMP control parameters to minimize a difference between the CMP result and a desired CMP result.

Abstract: A polishing system can have a rotatable platen, a polishing pad secured to the platen, a carrier head to hold a substrate against the polishing pad, and an eddy current monitoring system including a coil or ferromagnetic body that extends at least partially through the polishing pad. A polishing pad can have a polishing layer and a coil or ferromagnetic body secured to the polishing layer. Recesses can be formed in a transparent window in the polishing pad.

Abstract: A sensor for monitoring a conductive film in a substrate during chemical mechanical polishing generates an alternating magnetic field that impinges a substrate and induces eddy currents. The sensor can have a core, a first coil wound around a first portion of the core and a second coil wound around a second portion of the core. The sensor can be positioned on a side of the polishing surface opposite the substrate. The sensor can detect a phase difference between a drive signal and a measured signal.

Abstract: A carrier head for a chemical mechanical polishing apparatus includes a membrane with an exterior grooved surface for improved chemical mechanical polishing. The exterior grooved surface provides a path for the flow of air from the portion between the membrane and a substrate.