Abstract: A grinding method wherein the correlation between the amount of inertial grinding occurring in performing spark-out by a grinding unit and the maximum load current in a motor of the grinding unit is grasped, and a correction value for the amount of inertial grinding corresponding to the maximum load current is preliminarily obtained. When the wafer thickness measured by a thickness measuring gauge has reached the sum of a desired value and the correction value (=the amount of inertial grinding) corresponding to the maximum load current, the spark-out is started. Accordingly, the wafer thickness becomes the desired value after the inertial grinding in performing the spark-out.

Abstract: To eliminate the unevenness of the remaining film thickness of the wafers, and increase the polishing efficiency, reduce the running cost and enhance the yield. A CMP apparatus 1 is equipped with a polishing recipe preparing means 3 that prepares polishing conditions so that the polishing conditions such as polishing speed, polishing pressure, abrasive and the like for the wafers become optimal, a remaining film thickness forecasting means 4 that forecasts the remaining film thickness of the wafer to be polished under the polishing conditions after polishing, a remaining film thickness measuring apparatus 4 that measures the remaining film thickness of the wafer after the polishing, and a computer 6 that controls the polishing conditions on the basis of the measurement results of the remaining film thickness.

Abstract: A nozzle for spraying sublimable solid particles and preventing frost from forming at surfaces of the nozzle. The nozzle includes: a cleaning agent block for phase-changing a cleaning agent into a snow containing sublimable solid particles; a nozzle block for growing the cleaning agent snow through adiabatic expansion and spraying the grown cleaning agent snow onto a surface of an object; a carrier gas block for supplying a carrier gas to the nozzle block to mix with the cleaning agent snow; and a heater for heating at least a portion of the carrier gas supplied from the carrier gas supply source. Fine dry ice particles and liquid CO2, passing through a solenoid valve from a CO2 reservoir tank and a pressure drop of a flow rate regulation valve, are introduced into the spray nozzle and then mixed with the carrier gas, such as N2 or purified air, and discharged.

Abstract: A polishing state monitoring apparatus measures characteristic values of a surface, being polished, of a workpiece to determine the timing of a polishing end point. The polishing state monitoring apparatus includes a light-emitting unit for applying light from a light source to a surface of a workpiece being polished, a light-receiving unit for receiving reflected light from the surface of the workpiece, a spectroscope unit for dividing the reflected light received by the light-receiving unit into a plurality of light rays having respective wavelengths, and light-receiving elements for accumulating the detected light rays as electrical information.

Abstract: Machines and systems for removing materials from microfeature workpieces using fixed-abrasive mediums. One embodiment of a method for removing material from a microfeature workpiece comprises rubbing the workpiece against a surface of a fixed-abrasive medium having a matrix and abrasive particles attached to the matrix, and sensing a parameter indicative of frictional force at an interface between the workpiece and the surface of the fixed-abrasive medium. This method continues by moving at least one of the workpiece and the fixed-abrasive medium relative to each other in a direction transverse to the interface based on the parameter. For example, the workpiece and/or the fixed-abrasive medium can be vibrated or oscillated to reduce the frictional force and/or maintain a desired relative velocity between the workpiece and the fixed-abrasive medium.

Abstract: To eliminate the unevenness of the film thickness of the wafers, and increase the polishing efficiency, reduce the running cost and enhance the production yield. A CMP apparatus 1 includes a film thickness measuring means 6 that measures the film thickness of the wafers before polishing, a polishing recipe preparing means 7 that prepares polishing conditions so that the polishing conditions such as polishing speed, polishing pressure, and the like for the wafers become optimal, a polishing time forecasting means that forecasts the polishing time of the wafer on the basis of the optimal polishing condition and the measured value, a polishing time measuring means that measures the actual polishing time of the wafer, and a computer 9 that controls the polishing condition on the basis of the measured value and the like of the polishing time.

Abstract: To provide a plating removing apparatus for 3-piece wheels, which can easily and neatly remove plating at the welding planned portion of the superimposed part of the inner rim and the outer rim. A plating removing apparatus that removes plating of a welding planned portion R in a three-piece wheel having the inner rim 2B, the outer rim 2A, and a disk, comprises a support means 11 that rotatably supports the outer rim 2A, at least three holding rollers 34 that hold the rim supported by the support means 11 from the outer circumferential side, a rotation drive means 67 that rotates and drives the outer rim 2A held by the holding rollers 34, and a grinding means that grinds the welding planned portion R on the outer circumferential surface of the rim 2A by an abrasive cloth/paper 13 and removes plating the welding planned portion R.

Abstract: The present invention aims to provide a wafer polish monitoring method and device for detecting the end point of the polishing of a conductive film with high precision and accuracy by monitoring the variation of the film thickness of the conductive film without adverse influence of slurry or the like after the film thickness of the conductive film decreases to an extremely small film thickness defined by the skin depth.

Abstract: A system for chemical mechanical polishing (CMP) is disclosed which includes a polishing apparatus for polishing a surface of a substrate and a sensor for determining zone-specific substrate data respectively related to at least two zones of the substrate. A controller is provided for generating, in response to the zone-specific substrate data, at least one set-point value, e.g., a set-point window of values for at least one operating parameter of the polishing apparatus in a subsequent CMP process. The set-point value/set-point window of values may be displayed on a display device or automatically taken into account by the controller for controlling subsequent CMP processes.

Abstract: A method of forming a polishing pad with a polishing layer having a polishing surface and a back surface. A plurality of grooves are formed on the polishing surface, and an indentation is formed in the back surface of the polishing layer. A region on the polishing surface corresponding to the indentation in the back surface is free of grooves or has shallower grooves.

Abstract: In a fluid polishing method for processing a fine aperture by slurry 7, the slurry is supplied from a cylinder 2a in a slurry flow rate target process until the flow rate increases to a target value of a slurry feed flow rate. When the flow rate reaches the target flow-rate, the cylinder is stopped and switched to another cylinder 2b and the operation fluid flow rate of the fine aperture is thereafter measured. In a metering process, to be executed next, a necessary processing time is calculated on the basis of the operation fluid flow rate and polishing is carried out for a necessary processing time by another cylinder 2b. Another cylinder is then stopped and switched and the operation fluid flow rate is measured. In this way, the metering process is repeated until the operation fluid flow rate reaches a predetermined value. In each process, the supply of the slurry is not interrupted.

Abstract: A jet of water in a cylindrical form is supplied from a jet nozzle onto a measurement surface of a substrate to form a column of the water extending between the nozzle and the measurement surface. Light is emitted from an irradiation fiber and transmitted through the column of water to the measurement surface. The light reflected by the measurement surface is received by a light-receiving fiber through the column of water. A measurement calculation unit measures the thickness of a film formed on the substrate, based on the intensity of the reflected light.

Abstract: The present invention provides a shredding device that has an elongated body that houses a motor. A brush may be rotatably secured to the body, at least partly outside of the body, and driven by the motor and configured to remove by abrasion at least a layer of a substrate having markings thereon. The shredding device may include a vacuum system for collecting particulate matter formed by abrading the substrate.

Abstract: A polishing pad for chemical mechanical planarization of a film on a substrate is customized by obtaining one or more characteristics of a structure on a substrate. For example, when the structure is a chip formed on a semiconductor wafer, the one or more characteristics of the structure can include chip size, pattern density, chip architecture, film material, film topography, and the like. Based on the one or more characteristics of the structure, a value for the one or more chemical or physical properties of the pad is selected. For example, the one or more chemical or physical properties of the pad can include pad material hardness, thickness, surface grooving, pore size, porosity, Youngs modulus, compressibility, asperity, and the like.

Abstract: A method and apparatus for milling a desired pocket in a solid workpiece uses an abrasive fluid-jet by moving and suitably orienting the abrasive fluid-jet relative to the workpiece. The method includes defining a path of the abrasive fluid-jet necessary to mill a desired pocket in the solid workpiece. The path is defined by a number of parameters. The parameters include a translation velocity, a fluid pressure, and an abrasive fluid-jet position and orientation relative to the workpiece. Generating a command set is according to the defined path and is configured to drive a computer numerical control manipulator system.

Abstract: Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.

Abstract: Methods of determining a polishing endpoint are described using spectra obtained during a polishing sequence. In particular, techniques for using only desired spectra, faster searching methods and more robust rate determination methods are described.

Abstract: This disclosure provides methods and apparatus for predictably changing the thickness of a microfeature workpiece. One implementation provides a planarizing method in which a first workpiece is planarized in first and second planarizing processes and a total change in thickness is determined. This thickness change is modified by a thickness offset associated with the second planarizing process and a material removal rate is calculated from this modified thickness change and the time on the first planarizer. A thickness of a second microfeature workpiece is measured and a target thickness of material to be removed is determined. A target planarizing time is then determined as a function of the target thickness reduction and the material removal rate.

Abstract: A numeric-control work-centre for machining plates of glass, marble and natural or synthetic stones comprises: a bench, defining a work surface, designed to receive the plates to be machined; two fixed side members, set at the two sides of the work surface; an overhead cross-member, guided over the two side members like an overhead-travelling crane, in a horizontal direction Y orthogonal to the horizontal direction X of the cross-member; and a carriage, which is mobile in the aforesaid horizontal direction X on the cross-member, present in which are two work heads carried by a slide, mounted on the carriage so that, during machining of the edge of a plate, consecutive passing of the first tool and of the second tool in any order is obtained with one and the same movement of the carriage and/or of the cross-member of the work-centre.

Abstract: A substrate processing apparatus (1) includes first and second polishing units (70A, 70B) for polishing a peripheral portion of a substrate (W), a primary cleaning unit (100) for cleaning the substrate (W), a secondary cleaning and drying unit (110) for drying the substrate (W) cleaned in the primary cleaning unit (100), and a measurement unit (30) for measuring the peripheral portion of the substrate (W). The measurement unit (30) includes a mechanism for measurement required for polishing in the first and second polishing units (70A and 70B), such as a diameter measurement mechanism, a cross-sectional shape measurement mechanism, or a surface condition measurement mechanism.

Abstract: According to one embodiment of the invention, a chemical mechanical polishing monitoring system includes a pump delivering a slurry to a polishing pad and a rotation sensing device coupled to the pump. The rotation sensing device senses a rotation of the pump and generates a signal indicative of the rotation of the pump.

Abstract: This disclosure provides methods and apparatus for predictably changing the thickness of a microfeature workpiece. One implementation provides a planarizing method in which a first workpiece is planarized in first and second planarizing processes and a total change in thickness is determined. This thickness change is modified by a thickness offset associated with the second planarizing process and a material removal rate is calculated from this modified thickness change and the time on the first planarizer. A thickness of a second microfeature workpiece is measured and a target thickness of material to be removed is determined. A target planarizing time is then determined as a function of the target thickness reduction and the material removal rate.

Abstract: A process of grinding a surface of a workpiece, by a grinding tool rotated about its axis. The process includes a grinding step of grinding the workpiece surface, by pressing at least one of the grinding tool and the workpiece against the other of the grinding tool and the workpiece, such that a constant force is exerted on the other of the grinding tool and the workpiece by the at least one of the grinding tool and the workpiece. Also disclosed is a grinding apparatus including: a moving device operable to move at least one of the grinding tool and the workpiece relative to the other of the grinding tool and the workpiece, at least in an infeed direction that increases a depth of cut of the grinding tool into the workpiece; and a controller which controls the moving device, such that the at least one of the grinding tool and the workpiece is pressed against the other of the grinding tool and the workpiece, with a constant force.

Abstract: An electrochemical mechanical polishing apparatus is for use in polishing of a conductive material (e.g., metal) on a surface of a substrate by combination of electrochemical action and mechanical action.

Abstract: Tools and methods for in-situ characterizing of a surface of a polishing pad are described. A characterization tool is integrated with polishing tool so that the polishing pad can be monitored in-situ. The characterization tool and the polishing pad can be rotated or moved so that any portion of the polishing pad can be tested.

Abstract: A failure alarm device includes: an operation instruction capturing unit; an operation status signal capturing unit; and a timing and alarming unit for starting timing when the operation instruction capturing unit captures a start-operation instruction and the operation status signal capturing unit captures an operation status signal indicative of that the CMP apparatus is in the preset operation status, and for alarming if a duration of the operation status signal indicative times out. During operation of the CMP apparatus, when there occurs an unexpected failure in a computer or control software or the CMP apparatus is powered off, an alarm can be initiated in a timely way so as to inform an apparatus engineer to obviate the failure, and wafer rejects in the CMP apparatus can be avoided. A failure alarm method is also provided.

Abstract: The invention relates to a grinding method and to a cylindrical grinding machine, in which a sintered hard metal round rod is completely pushed through a chuck of a workpiece spindle head, said chuck having chuck jaws. Two backrest seats are ground on the freely projecting end area of the round rod, and two backrests are then placed on the round rod in directions. The resulting secure support of the end area enables a front cone to be ground with a high level of precision with regard to the concentricity at the end of the round rod facing the quill of a tailstock. A multiple grinding wheel, which is comprised of two differently designed individual wheels that directly rest against one another in an axial manner, serves to grind the front cone and is advanced toward the round rod in the X-direction. The multiple grinding wheel is mounted in a grinding spindle. The individual wheels have different grinding areas.

Abstract: A system is provided for measuring a head during a lapping process. First provided is a wafer including at least one head each having an electrical lapping guide (ELG), a plurality of wafer contacts in electrical communication with the ELG, and a closure formed thereon defining a slot in which the wafer contacts are positioned. Also included is a lapping cable coupled to a testing device. The lapping cable includes a plurality of lapping cable contacts. An adapter includes a plurality of adapter contacts in electrical communication with the lapping cable contacts. The adapter contacts are removably positionable in electrical communication with the wafer contacts for measuring the head during a lapping process.

Abstract: A method of determining a physical property of a substrate includes recording a first spectrum obtained from a substrate, the first spectrum being obtained during a polishing process that alters a physical property of the substrate. The method includes identifying, in a database, at least one of several previously recorded spectra that is similar to the recorded first spectrum. Each of the spectra in the database has a physical property value associated therewith. The method includes generating a signal indicating that a first value of the physical property is associated with the first spectrum, the first value being determined using the physical property value associated with the identified previously recorded spectrum in the database. A system for determining a physical property of a substrate includes a polishing machine, an endpoint determining module, and a database.

Abstract: The present invention relates to a substrate polishing apparatus and a substrate polishing method for polishing a substrate such as a semiconductor wafer to a flat finish. The substrate polishing apparatus includes a polishing table (100) having a polishing surface (101), a substrate holder (1) for holding and pressing a substrate (W) against the polishing surface (101) of the polishing table (100), and a film thickness measuring device (200) for measuring a thickness of a film on the substrate (W). The substrate holder (1) has a plurality of pressure adjustable chambers (22 to 25), and pressures in the respective chambers (22 to 25) are adjusted based on the film thickness measured by the film thickness measuring device (200).

Abstract: A method is presented for grinding a surface of an elongate bar having a plurality of thin film magnetic elements aligned in a line, each of the thin film magnetic elements having a magnetoresistive sensor for reading a magnetic record from a recording medium and an inductive electromagnetic transducer for writing a magnetic record into the recording medium in a stacked structure, the surface of the bar being a grind surface so that it can be formed into an air-bearing surface by means of the grinding. The method has steps of providing first resistive films on the grind surface in advance along a first longitudinal line parallel to a longitudinal direction of the bar, and providing second resistive films on the grind surface in advance along a second longitudinal line parallel to the longitudinal direction of the bar.

Abstract: Methods of refining using a plurality of refining elements are discussed. A refining apparatus having refining elements that can be smaller than the workpiece being refined are disclosed. New refining methods, refining apparatus, and refining elements disclosed. Methods of refining using frictional refining, chemical refining, tribochemical refining, and electrochemical refining and combinations thereof are disclosed. A refining apparatus having magnetically responsive refining elements that can be smaller than the workpiece being refined are disclosed. The refining apparatus can supply a parallel refining motion to the refining element(s) for example through magnetic coupling forces. The refining apparatus can supply multiple different parallel refining motions to multiple different refining elements for example solely through magnetic coupling forces to improve refining quality and versatility. A refining chamber can be used. New methods of control are refining disclosed.

Abstract: A fiber optic polishing apparatus is disclosed including a single degree-of-freedom (DOF) gear transmission system, a pressurizing module, a fixture module, and a housing assembly. The single DOF gear transmission system would enable a fiber optic polishing machine, . or polisher to be driven by only one motor, or by human hand. The manual polisher is a unique field polishing machine where electricity or battery is not available or not allowed. Both manual polisher and motorized polisher have the following features: polishing up to four connectors or ferrules simultaneously; adjustable force ensures consistent finish for a wide variety of connector types and the number of connectors in the fixture; quick release for convenient removal of polish fixture; low center of gravity for high stability; small footprint for multiple-machine operation to avoid time-consuming film change.

Abstract: A two-side working machine, comprising an upper and a lower working disc which hold on, and are fixed to, an upper and a lower carrier disc, and which are disposed coaxially with each other and are adapted to be rotationally driven relative to each other by a working motor via a driving shaft, wherein the working discs have formed therebetween a working gap in which flat workpieces are processed on both sides, and a distance measuring device which measures the distance between working discs in at least two radially spaced points of the working gap, whereby the upper carrier disc is suspended on a supporting ring which is connected to the upper working shaft so as to be fixed for rotation, an annular portion of the carrier disc and means which are externally controllable by the supporting ring and via which a radial force is applied to the circumference of the carrier disc about the circumference of the supporting ring by means of a force generator, and control means are provided which adjust the force on the

Abstract: Methods for reconditioning a polishing pad and detecting diamond contamination of the polishing pad, are disclosed. In particular, the methods include the step of exposing the reconditioned polishing pad to an energy source to induce the diamond contamination to fluoresce. Detection of the diamond contamination is then made by detecting the fluorescence. Removal of the diamond contamination results in an improved reconditioned polishing pad. A reconditioning system for reconditioning a damaged polishing pad is also disclosed. The reconditioning system includes a reconditioning disk including a plurality of diamonds for reconditioning the polishing pad, wherein each diamond fluoresces when exposed to an energy source.

Abstract: A technique of the present invention utilizes qualification characteristics from a single wafer for qualifying a semiconductor manufacturing tool. Generally speaking, the technique commences with the processing of a wafer by the manufacturing tool. During processing, one or more qualification characteristics required to properly qualify the tool are measured using an in situ sensor or metrology device. Subsequently, the manufacturing tool is qualified by adjusting one or more parameters of a recipe in accordance with the qualification characteristics measured from the wafer to target one or more manufacturing tool specifications. In some embodiments, the tool to be qualified includes a bulk removal polishing platen, a copper clearing platen and a barrier removal polishing platen.

Abstract: A ballbar is used to assess the accuracy of relative motion between an arbor and a table 4—of a machine tool. Mounting components are secured respectively to the arbor and the table-4. Each mounting component comprises a block that has provision on three orthogonal surfaces for receiving support means for a ballbar. By appropriate selection of the mounting faces, it is possible to set up the ballbar to check motion in all three of the operating planes of the machine. The mounting component comprises a ring for fitting over the arbor of the grinding machine, and the mounting block is connected to the ring by a rod.

Abstract: Semiconductor wafers are polished between upper and lower polishing plates, the semiconductor wafer being polished on both sides while in a recess of a carrier by supplying a polishing agent. The wafer is double-side polished in a first polishing step, which is concluded with a negative overhang, defined as the difference between the thickness of the wafer and the thickness of the carrier after the first polishing step. The wafer is then double-side polished in a second polishing step, in which less than 1 ?m of material is removed from the surfaces of the wafer. Silicon semiconductor wafers having polished front and rear sides with a front side global planarity SBIRmax value of less than 100 nm, and a front side local planarity PSFQR value of 35 nm or less in an edge region, with an edge exclusion of 2 mm, are obtained.

Abstract: An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.

Abstract: This invention discloses a method of evaluating the internal structure of a grinding wheel through ultrasonic inspection.

Abstract: A completely automated apparatus for verifying the identity and geometry of drill bits, re-sharpening the cutting tip of a drill bit and re-positioning a locating ring upon the shank portion of the drill bit subsequent to the re-sharpening of the cutting tip thereof. The apparatus comprises a housing having a pair of cassette trays, a pair of grinding assemblies, a pair of optical assemblies, a pair of primary cleaning assemblies, a pair of secondary cleaning assemblies, a pair of inversion assemblies, a pair of workhead assemblies, a bumping assembly, and a loader assembly attached thereto. The workhead and loader assemblies are used to transport drill bits between the cassette trays and other assemblies in a selected sequence which is controlled and coordinated by a programmable control device. The control device is electrically interfaced to each of the assemblies and allows the cutting tip re-sharpening and locating ring re-positioning processes to be conducted simultaneously on at least two drill bits.

Abstract: A chemical mechanical polishing (CMP) apparatus includes a workpiece carrier configured for retaining a workpiece thereupon, a polishing platen configured for retaining a polishing pad thereupon, and an electromagnetic coil surrounding a periphery of the workpiece carrier. The electromagnetic coil is configured to provide a magnetic field of alternating polarity to cause the rotation of ferromagnetic slurry particles disposed on the workpiece to facilitate polishing of the workpiece.

Abstract: The substrate polishing method of the present invention can be used, in a substrate polishing apparatus having multiple carriers for one polishing pad, for determining a polishing time necessary to obtain a specific amount of polishing in polishing substrates using only some of the carriers among multiple carriers. In the present method, a correction coefficient indicating the correlation between the polishing time in polishing substrates using all the carriers and the polishing time in polishing substrates using only a part of the carriers is obtained in advance. The polishing time necessary for the specific amount of polishing in polishing substrates using only a part of the carriers is calculated based on the correction coefficient and the polishing time necessary for polishing the specific amount of polishing in polishing substrates using all of the carriers.

Abstract: A two-side working machine, comprising an upper and a lower working disc which hold on, and are fixed to, an upper and a lower carrier disc, and which are disposed coaxially with each other and are adapted to be rotationally driven relative to each other by a working motor via a driving shaft, wherein the working discs have formed therebetween a working gap in which flat workpieces are processed on both sides, and a distance measuring device which measures the distance between working discs in at least two radially spaced points of the working gap, whereby the upper carrier disc is suspended on a supporting ring which is connected to the upper working shaft so as to be fixed for rotation, an annular portion of the carrier disc and means which are externally controllable by the supporting ring and via which a radial force is applied to the circumference of the carrier disc about the circumference of the supporting ring by means of a force generator, and control means are provided which adjust the force on the

Abstract: A lapping method and apparatus is provided that increases the yield rate in the magnetic head slider manufacturing process. According to the invention, an apparatus for lapping thin film magnetic heads includes a jig block and a lapping plate. The jig block includes a first jig which holds a bar to be lapped, and second jig which holds a member for load sharing. The lapping plate is movable relative to the first jig and the second jig, and is contactable with the surface to be lapped of the bar held by the first jig and the member for load sharing held by the second jig for lapping.

Abstract: A lapping machine that polishes a head block in which plural head devices are connected in a row includes a jig that has a bottom surface that opposes to a grinding plane, and fixes the head block onto the bottom surface, a pressure mechanism that applies a pressure to the head block against the grinding plane, a detector that is connected to the head block and detects a grinding amount of the head block, and a dummy block fixed onto the bottom surface adjacent to the head block.

Abstract: A sanding machine includes a number of machine elements, a number of sensors attached to the machine elements respectively, a malfunction indicating device having a graph disposed on a front panel for showing the machine elements, and a number of indicating members disposed on the front panel and coupled to the sensors for detecting malfunctions of the machine elements and for detecting whether the machine elements may not be operated or have become failed or have been damaged or not, and for allowing the malfunction areas to be easily and quickly found and repaired by the workers or the users.

Abstract: A polishing pad has an opaque polishing layer with an aperture therethrough and a polishing surface, and a solid light-transmissive window in the aperture. The solid light-transmissive window includes an outer portion secured to the polishing layer and an inner portion secured to the outer portion. The outer portion has a upper surface recessed relative to the polishing surface, whereas the inner portion has an upper surface that is substantially co-planar with the polishing surface.

Abstract: Disclosed herein is a moving head for a semiconductor wafer polishing apparatus. The semiconductor wafer polishing apparatus has a table on which a polishing pad is formed, and the moving head mounted via a support unit to hold a wafer relative to a polishing surface of the table. In this case, the moving head includes a sensing means having a load cell and a piezoelectric sensor to measure pressing force and frictional force acting on the wafer provided in the moving head. The present invention relates to the polishing of a semiconductor wafer material from which an integrated circuit is made.

Abstract: A computer-implemented method for process control in chemical mechanical polishing in which an initial pre-polishing thickness of a substrate is measured at a metrology station, a parameter of an endpoint algorithm is determined from the initial thickness of the substrate, a substrates is polished at a polishing station, and polishing stops when an endpoint criterion is detected using the endpoint algorithm.