For Stripping Photoresist Material Patents (Class 510/176)
-
Publication number: 20090099051Abstract: The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.Type: ApplicationFiled: July 15, 2008Publication date: April 16, 2009Inventors: Tetsuo Aoyama, Toshitaka Hiraga, Tomoko Suzuki
-
Publication number: 20090082240Abstract: A stripping liquid for a semiconductor device is provided that includes an aqueous solution containing a quaternary ammonium hydroxide, an oxidizing agent, an alkanolamine, and an alkali metal hydroxide. There is also provided a stripping method that includes a stripping liquid preparation step of preparing the stripping liquid and a stripping step of removing at least one deposit selected from the group consisting of a photoresist, an anti-reflection film, and an etching residue by means of the stripping liquid obtained in the stripping liquid preparation step.Type: ApplicationFiled: September 15, 2008Publication date: March 26, 2009Applicant: FUJIFILM CorporationInventors: Katsuyuki NUKUI, Hiroyuki Seki, Tadashi Inaba
-
Patent number: 7498295Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.Type: GrantFiled: July 31, 2007Date of Patent: March 3, 2009Assignee: Air Liquide Electronics U.S. LPInventors: Matthew L. Fisher, Ashutosh Misra
-
Publication number: 20090036344Abstract: Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper or cobalt salt with or without an added amine to improve solubility of the copper or cobalt salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods.Type: ApplicationFiled: October 30, 2007Publication date: February 5, 2009Inventors: Kimberly Dona Pollard, Michael T. Phenis
-
Publication number: 20090029893Abstract: Disclosed is a cleaning liquid for lithography which is characterized by containing a mixed organic solvent which is obtained by mixing (A) at least one solvent selected from ketone organic solvents and glycol ether organic solvents, (B) at least one solvent selected from lactone organic solvents and (C) at least one solvent selected from alkoxy benzenes and aromatic alcohols. This cleaning liquid is highly safe and does not have adverse effects on the environment or the human body, while having basic characteristics necessary for a cleaning liquid for lithography. In addition, this cleaning liquid can be stably supplied at low cost.Type: ApplicationFiled: February 14, 2007Publication date: January 29, 2009Inventors: Jun Koshiyama, Hideya Kobari
-
Publication number: 20090029894Abstract: The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. A method for washing a device substrate, which comprises a washing step of removing a resist attached to a device substrate by means of a solvent, wherein the solvent is a composition comprising at least one fluorinated compound selected from the group consisting of a hydrofluoroether, a hydrofluorocarbon and a perfluorocarbon, and a fluorinated alcohol.Type: ApplicationFiled: September 19, 2008Publication date: January 29, 2009Applicants: ASAHI GLASS COMPANY, LIMITED, NTT Advanced Technology CorporationInventors: Hidekazu Okamoto, Hideo Namatsu
-
Publication number: 20090011967Abstract: A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent.Type: ApplicationFiled: June 17, 2008Publication date: January 8, 2009Inventors: Wai Mun Lee, Charles U. Pittman, JR., Robert J. Small
-
Publication number: 20090001314Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.Type: ApplicationFiled: June 25, 2008Publication date: January 1, 2009Inventor: Donald L. Yates
-
Publication number: 20090005283Abstract: Non-aqueous stripping and cleaning compositions for cleaning microelectronics devices, the composition having a least one organic sulfur-containing polar compound as a stripping solvent, at least one water-free source of a strong hydroxide base, and at least one hydroxypyridine stabilizing agent to inhibit detrimental side reactions.Type: ApplicationFiled: January 31, 2007Publication date: January 1, 2009Inventor: Sean M. Kane
-
Patent number: 7467632Abstract: A photoresist cleaning solution and method for forming photoresist patterns using the same. More specifically, disclosed are a photoresist cleaning solution comprising H2O and an ionic surfactant represented by Formula 1, and a method for forming a photoresist pattern using the same. By spraying the cleaning solution of the present invention over photoresist film before and/or after exposing step, pattern formation in an undesired region caused by ghost images can be removed.Type: GrantFiled: January 4, 2007Date of Patent: December 23, 2008Assignee: Hynix Semiconductor Inc.Inventors: Geun Su Lee, Cheol Kyu Bok
-
Patent number: 7456140Abstract: A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.Type: GrantFiled: August 17, 2004Date of Patent: November 25, 2008Assignee: EKC Technology, Inc.Inventors: Robert J. Small, Bakul P. Patel, Wai Mun Lee, Douglas Holmes, Jerome Daviot, Chris Reid
-
Patent number: 7456141Abstract: A photo resist stripper composition includes PGME or its derivatives and ANONE or its derivatives characterized by low toxicity, safe use, free of odors, environment friendly, easy disposal of waste liquid and wastewater; good solution to photo resist material film, proper volatility, excellent stripping capability, good compatibility among different types of photo resist; allowing storage at ambient temperature, low production cost, and not requiring retrofit of the existing equipment.Type: GrantFiled: April 19, 2005Date of Patent: November 25, 2008Assignee: Echem Solutions Corp.Inventors: Ming-Ann Hsu, Kuang-Lung Kuo, Mu-Lin Tsai, Sing-Ru Dai
-
Publication number: 20080287333Abstract: Back end photoresist strippers and residue compositions are provided by non-aqueous compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise a polar organic solvent, a hydroxylated amine, and as a corrosion inhibitor fructose.Type: ApplicationFiled: February 1, 2005Publication date: November 20, 2008Inventor: Seiji Inaoka
-
Patent number: 7452660Abstract: A method and apparatus is provided for using a plasma generated from a processing gas mixture including H2O to efficiently strip photoresist material without causing significant damage to exposed, underlying low k dielectric material. The method includes disposing the processing gas mixture including the H2O over the wafer. The processing gas mixture including the H2O is then transformed into a plasma. The plasma serves to remove the photoresist material from the substrate without adversely affecting the exposed low k dielectric material.Type: GrantFiled: August 11, 2004Date of Patent: November 18, 2008Assignee: Lam Research CorporationInventors: Zhisong Huang, Reza Sadjadi
-
Publication number: 20080280235Abstract: Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous, non-corrosive cleaning compositions that resist galvanic corrosion when used on stacked layer structures of different types of metals at a surface of an electronic device.Type: ApplicationFiled: March 16, 2006Publication date: November 13, 2008Inventor: Seiji Inaoka
-
Publication number: 20080271752Abstract: The present invention provides a mechanism capable of removing a minute particle adhered to a fine pattern or the like without giving damages to the pattern or the like. After being installed on a device which can perform rotating operation, the high viscosity liquid is dropped on an upper surface of an object such as a photomask to be cleaned by a liquid supply part, and then the photomask is rotated to move the high viscosity liquid. During the movement of the high viscosity liquid, a particle adhered to the object such as the photomask is contained in the high viscosity liquid, and is removed. Further, the particle thus contained in the liquid is prevented from re-adhering to the object such as the photomask by controlling a zeta potential of the high viscosity liquid, and is removed from the object such as the photomask.Type: ApplicationFiled: June 30, 2008Publication date: November 6, 2008Applicant: HOYA CORPORATIONInventor: Katsuhiro Takushima
-
Publication number: 20080269096Abstract: A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.Type: ApplicationFiled: April 14, 2006Publication date: October 30, 2008Applicant: Advance Technology Materials, Inc.Inventors: Pamela M. Visintin, Michael B. Korzenski, Thomas H. Baum
-
Publication number: 20080261847Abstract: A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.Type: ApplicationFiled: November 9, 2006Publication date: October 23, 2008Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.Inventors: Pamela M. Visintin, Ping Jiang, Michael B. Korzenski, Mackenzie King
-
Publication number: 20080261846Abstract: The invention provides cleaning compositions for cleaning microelectronic substrates that are able to essentially completely clean such substrates and inhibit metal corrosion or produce essentially no corrosion of the metal elements of such substrates, and to do so at relatively short cleaning times and relatively low temperatures compared to the cleaning times required for prior art alkaline-containing cleaning compositions. The invention also provides method of using such cleaning compositions to clean microelectronic substrates without producing any significant corrosion of the metal elements of the microelectronic substrate. The cleaning compositions of this invention comprise (a) at least one organic solvent, (b) at least one unneutralized inorganic phosphorus-containing acid, and (c) water. The cleaning compositions of this invention optionally can have present in the compositions other components, such as for example surfactants, metal complexing or chelating agents, corrosion inhibitors, and the like.Type: ApplicationFiled: April 18, 2006Publication date: October 23, 2008Inventor: Sean M. Kane
-
Patent number: 7435712Abstract: This disclosure discusses cleaning of semiconductor wafers after the Chemical-Mechanical Planarization (CMP) of the wafer during the manufacturing of semiconductor devices. Disclosed is an alkaline chemistry for the post-CMP cleaning of wafers containing metal, particularly copper, interconnects. Residual slurry particles, particularly copper or other metal particles, are removed from the wafer surface without significantly etching the metal, leaving deposits on the surface, or imparting significant contamination to the wafer while also protecting the metal from oxidation and corrosion. Additionally, at least one strong chelating agent is present to complex metal ions in solution, facilitating the removal of metal from the dielectric and preventing re-deposition onto the wafer.Type: GrantFiled: October 1, 2004Date of Patent: October 14, 2008Assignee: Air Liquide America, L.P.Inventors: Ashutosh Misra, Matthew L. Fisher
-
Patent number: 7435711Abstract: The present invention provides a cleaning agent for removing the solder flux and method for cleaning the solder flux which exhibit the excellent cleaning property even at the time of cleaning a lead-free soldering flux, a high-melting-point solder flux or the like and, at the same time, exhibits the excellent rinsing property in the rinsing using an alcoholic solvent in a next step. Accordingly, the present invention provides a cleaning agent for removing the solder flux which sets a content of benzyl alcohol to a value which falls within a range of 70 to 99.9 weight % and a content of amino alcohol to a value which falls within a range of 0.1 to 30 weight % when a content of a glycol compound is below 1 weight % with respect to a total amount of the cleaning agent for removing the solder flux, and sets a content of benzyl alcohol to a value which falls within a range of 15 to 99 weight % and a content of amino alcohol to a value which falls within a range of 0.Type: GrantFiled: August 10, 2004Date of Patent: October 14, 2008Assignee: Kaken Tech Co., Ltd.Inventors: Shigeo Hori, Hisakazu Takahashi, Hirohiko Furui, Hiroki Nakatsukasa
-
Publication number: 20080242575Abstract: Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist.Type: ApplicationFiled: June 3, 2008Publication date: October 2, 2008Inventors: Takayuki Haraguchi, Kazumasa Wakiya, Shigeru Yokoi
-
Publication number: 20080241758Abstract: A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues.Type: ApplicationFiled: June 3, 2008Publication date: October 2, 2008Inventors: Shigeru Yokoi, Kazumasa Wakiya
-
Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition
Publication number: 20080242574Abstract: A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture.Type: ApplicationFiled: June 7, 2006Publication date: October 2, 2008Applicant: Advanced Technology Materials, IncInventors: Melissa K. Rath, David D. Bernhard, Thomas H. Baum, David W. Minsek -
Publication number: 20080227678Abstract: A cleaning liquid for lithography that exhibits equally excellent cleaning performance for resists of a wide variety of compositions, such as various resists for i-line, KrF and ArF, silicic resist and chemical amplification type positive resist, and that excels in post-treatment dryability, being free from any deterioration of resist performance by cleaning. There is provided a cleaning liquid for lithography, comprising at least one member (A) selected from among lower alkyl esters of acetic acid and propionic acid and at least one member (B) selected from among ketones having 5 to 7 carbon atoms per molecule in a mass ratio of (A):(B) of 4:6 to 7:3.Type: ApplicationFiled: December 26, 2005Publication date: September 18, 2008Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Jun Koshiyama, Yasumitsu Taira, Chima Shinohara
-
Publication number: 20080214422Abstract: A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof.Type: ApplicationFiled: May 12, 2008Publication date: September 4, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-Hyun AHN, Eun-Mi BAE, Baik-Soon CHOI, Sang-Mun CHON, Dae-Joung KIM, Kwang-sub YOON, Sang-Kyu PARK, Jae-Ho KIM, Shi-Yong YI, Kyoung-Mi KIM, Yeu-Young YOUN
-
Patent number: 7419945Abstract: Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k dielectrics and copper or aluminum metallizations contain an oxidizing agent and a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols, and optionally other components.Type: GrantFiled: May 27, 2003Date of Patent: September 2, 2008Assignee: Mallinckrodt Baker, Inc.Inventor: Chien-Pin Sherman Hsu
-
Patent number: 7417016Abstract: The present invention relates to a composition for the removal of so-called “sidewall residues” from metal surfaces, in particular from aluminium or aluminium-containing surfaces, in particular from aluminium or aluminium-containing surfaces, during the production of semiconductor elements.Type: GrantFiled: May 27, 2003Date of Patent: August 26, 2008Assignee: BASF SEInventors: Raimund Mellies, Marc Boerner, Lucia Arnold, Andrea Barko, Rudolf Rhein
-
Patent number: 7413848Abstract: A method of removing photoresist is provided. In the whole process of removing the photoresist, plasma is not used. Instead, a first solution is used in a first removal step to remove a photoresist layer. Then, a second solution is used in a second removal step to completely remove the photoresist layer. The first solution and the second solution have different polarities, and the polarity of the first solution is large than that of the second solution.Type: GrantFiled: July 27, 2005Date of Patent: August 19, 2008Assignee: United Microelectronics Corp.Inventors: Lien-Sheng Chung, Chi-Hung Wei, Hsin-Hsu Lin
-
Patent number: 7402552Abstract: A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.Type: GrantFiled: December 16, 2005Date of Patent: July 22, 2008Assignee: Fujifilm Electronic Materials U.S.A., Inc.Inventors: Kenji Honda, Michelle Elderkin, Vincent Leon
-
Publication number: 20080169004Abstract: The present invention relates to a semi-aqueous cleaning composition used to remove unwanted organic and inorganic residues and contaminants from semiconductor substrates. The cleaning composition comprises a buffering system comprising a polyprotic acid having at least three carboxylic acid groups with a pKa value of about 5 to about 7. The composition also comprises a polyhydric solvent, such as glycerol. A fluoride ion source is also included in the cleaning compositions of the present invention and is principally responsible for removing inorganic residues from the substrate. The cleaning compositions of the present invention have a low toxicity and are environmentally acceptable.Type: ApplicationFiled: January 11, 2007Publication date: July 17, 2008Inventor: Aiping Wu
-
Publication number: 20080171682Abstract: A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.Type: ApplicationFiled: March 13, 2006Publication date: July 17, 2008Inventors: Sean Michael Kane, Steven A. Lippy
-
Patent number: 7399365Abstract: The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility.Type: GrantFiled: April 19, 2004Date of Patent: July 15, 2008Assignee: EKC Technology, Inc.Inventors: Tetsuo Aoyama, Toshitaka Hiraga, Tomoko Suzuki
-
Publication number: 20080167210Abstract: A removing solution for photosensitive composition for removal of a pigment-containing photosensitive composition, the solution comprising an alkyleneglycol monoalkyl ether and an aromatic hydrocarbon, as well as one or more solvents selected from among alkyleneglycol monoalkyl ether carboxylic acid esters, alkoxycarboxylic acid esters, alicyclic ketones and acetic acid esters. There is provided a photosensitive composition removing solution with excellent photosensitive composition removal performance.Type: ApplicationFiled: February 9, 2006Publication date: July 10, 2008Applicant: SHOWA DENKO K.K.Inventors: Masato Kaneda, Yasuhiro Mikawa, Kouichi Terao
-
Publication number: 20080161217Abstract: The invention relates to compositions and methods of removing silicon-based anti-reflective coatings/hardmask layers.Type: ApplicationFiled: January 3, 2007Publication date: July 3, 2008Inventors: Ruzhi Zhang, Ping-Hung Lu
-
Patent number: 7387130Abstract: A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined.Type: GrantFiled: December 5, 2006Date of Patent: June 17, 2008Assignee: EKC Technology, Inc.Inventors: Wai Mun Lee, Charles U. Pittman, Jr., Robert J. Small
-
Publication number: 20080139436Abstract: A method for two step cleaning of semiconductor substrate wherein a first formulation is contacted with the substrate and subsequently a second formulation is contacted with the substrate, optionally followed with a deionized water wash. The first formulation may be remover compositions referred to in the specification, such as a fluoride containing composition, and the second formulation may comprise a basic compound and from 0% to about 90% water, and may further comprise water from 0% to about 92.5% organic solvent.Type: ApplicationFiled: September 18, 2007Publication date: June 12, 2008Inventor: Chris Reid
-
Patent number: 7381694Abstract: Composition and method for removing photoresist materials from electronic components. The composition is a mixture of at least one dense phase fluid and at least one dense phase fluid modifier. The method includes exposing a substrate to at least one pulse of the composition in a supercritical state to remove photoresist materials from the substrate.Type: GrantFiled: January 11, 2005Date of Patent: June 3, 2008Assignee: Los Alamos National Security, LLCInventors: Leisa B. Davenhall, James B. Rubin, Craig M. V. Taylor
-
Publication number: 20080103078Abstract: Back end photoresist strippers and cleaning compositions of this invention are provided by amino acid-free, non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor compound with multiple hydroxyl functional groups that is a compound of the formula: T1-[(CR1R2)m—(CR3R4)n]p—(CR5R6)q-T2 where at least one of R1 and R2 OH and if one of R1 and R2 is not OH, it is selected from H, alkyl or alkoxy, m is a whole integer of 1 or greater, R3 and R4 are selected from H, alkyl or alkoxy, n is 0 or a greater whole positive integer, p is a whole integer of 1 or greater; at least one of R5 and R6 is OH and if one of R5 and R6 is not OH, it is selected from H, alkyl or alkoxy, q is a whole integer of 1 or greater; T1 and T2 are selected from H, alkyl, hydroxyalkyl, polyhydroxyalkyl, aminoalkyl, carbonylalkyl or amide groups or T1 and T2 may be coType: ApplicationFiled: February 25, 2005Publication date: May 1, 2008Applicant: MALLINCKRODT BAKER, INC.Inventor: Seiji Inaoka
-
Patent number: 7365045Abstract: A cleaning solution is provided for cleaning metal-containing microelectronic substrates, particularly for post etch, via formation and post CMP cleaning. The cleaning solution consists of a quaternary ammonium hydroxide, an organic amine, and water. A preferred cleaning solution consists of tetramethylammonium hydroxide, monoethanolamine, and water. The pH of cleaning solution is greater than 10.Type: GrantFiled: March 30, 2005Date of Patent: April 29, 2008Assignee: Advanced Tehnology Materials, Inc.Inventors: Elizabeth L. Walker, Jeffrey A. Barnes, Shahriar Naghshineh, Kevin P. Yanders
-
Patent number: 7361631Abstract: A composition and method using same for removing photoresist and/or processing residue from a substrate are described herein. In one aspect, there is provided a composition for removing residue consisting essentially of: an acidic buffer solution having an acid selected from a carboxylic acid or a polybasic acid and an ammonium salt of the acid in a molar ratio of acid to ammonium salt ranging from 10:1 to 1:10; an organic polar solvent that is miscible in all proportions in water; a fluoride, and water wherein the composition has a pH ranging from about 3 to about 7.Type: GrantFiled: September 15, 2004Date of Patent: April 22, 2008Assignee: Air Products and Chemicals, Inc.Inventors: Matthew I. Egbe, Jennifer M. Rieker, Darryl W. Peters, Irl E. Ward
-
Patent number: 7326673Abstract: Chemical formulations and methods for removing unwanted material, such as unexposed photoresist, metal oxides, CMP residue, and the like, from semiconductor wafers or other substrates. The formulations utilize a supercritical fluid-based cleaning composition, which may further include (I) co-solvent(s), (II) surfactant(s), (III) chelating agent(s), and/or (IV) chemical reactant(s).Type: GrantFiled: November 25, 2002Date of Patent: February 5, 2008Assignee: Advanced Technology Materials, Inc.Inventors: Chongying Xu, David W. Minsek, Thomas H. Baum, Matthew Healy
-
Publication number: 20080006305Abstract: An aqueous-based composition and process for removing photoresist, bottom anti-reflective coating (BARC) material, and/or gap fill material from a substrate having such material(s) thereon. The aqueous-based composition includes a fluoride source, at least one organic amine, at least one organic solvent, water, and optionally chelating agent and/or surfactant. The composition achieves high-efficiency removal of such material(s) in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.Type: ApplicationFiled: December 1, 2004Publication date: January 10, 2008Inventors: David D. Bernhard, Yoichiro Fujita, Tomoe Miyazawa, Makoto Nakajima
-
Patent number: 7312186Abstract: A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator: CH3—(CH2)l—O—(CmH2mO)n—X ??(1) wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group; CH3—(CH2)a—O—(CbH2bO)d—(CxH2xO)y—X ??(2) wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.Type: GrantFiled: January 5, 2004Date of Patent: December 25, 2007Assignees: Kanto Chemical Co., Inc., NEC Electronics CorporationInventors: Masayuki Takashima, Yoshiko Kasama, Hiroaki Tomimori, Hidemitsu Aoki
-
Patent number: 7309683Abstract: A cleaning composition comprises an alkali solution, pure water, and a surfactant represented by the following chemical formula: R1-OSO3—HA+ wherein R1 is one selected from a group consisting of a butyl group, an isobutyl group, an isooctyl group, a nonyl phenyl group, an octyl phenyl group, a decyl group, a tridecyl group, a lauryl group, a myristyl group, a cetyl group, a stearyl group, an oleyl group, a licenoleyl group and a behnyl group, and A is one selected from a group consisting of ammonia, ethanol amine, diethanol amine and triethanol amine.Type: GrantFiled: January 19, 2005Date of Patent: December 18, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Chang-Sup Mun, Chang-Ki Hong, Sang-Jun Choi, Woo-Sung Han
-
Publication number: 20070272275Abstract: The present invention is a composition for removal of multi-layer photoresist layers on an electronic device substrate for rework of the photoresist on the substrate, comprising; (i) a solvent blend of at least three discrete solvents, (ii) at least one organic sulfonic acid, and (iii) at least one corrosion inhibitor. The present invention is also a method for using the composition. This composition and method succeed in removing such multi-layer photoresist at temperatures less than 65° C. and in contact times under three minutes, allowing high throughput on single wafer tools.Type: ApplicationFiled: April 23, 2007Publication date: November 29, 2007Applicant: AIR PRODUCTS AND CHEMICALS, INC.Inventors: Aiping Wu, John Anthony Marsella
-
Patent number: 7294610Abstract: Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates.Type: GrantFiled: March 3, 2004Date of Patent: November 13, 2007Assignee: 3M Innovative Properties CompanyInventors: Patricia M. Savu, William M. Lamanna, Michael J. Parent
-
Patent number: 7273060Abstract: The present invention relates to methods and compositions for treating a surface of a substrate by foam technology that includes at least one treatment chemical. The invention more particularly relates to the removal of undesired matter from the surface of substrates with small features, where such undesired matter may comprise organic and inorganic compounds such as particles, films from photoresist material, and traces of any other impurities such as metals deposited during planarization or etching. A method according to the present invention for treating a surface of a substrate comprises generating a foam from a liquid composition, wherein the liquid composition comprises a gas; a surfactant; and at least one component selected from the group consisting of a fluoride, a hydroxylamine, an amine and periodic acid; contacting the foam with the surface of a substrate; and, removing the undesired matter from the surface of the substrate.Type: GrantFiled: June 12, 2006Date of Patent: September 25, 2007Assignee: EKC Technology, Inc.Inventors: Bakul P. Patel, Mihaela Cernat, Robert J. Small
-
Patent number: 7250391Abstract: The cleaning composition for removing resists includes a salt of hydrofluoric acid and a base not containing a metal (A component), a water-soluble organic solvent (B1 component), at least one organic acid or inorganic acid (C component), water (D component), and, optionally, an ammonium salt (E1 component), and having a pH 4-8. Thus, in manufacturing a semiconductor device, such as a copper interconnecting process, efficiency of removing resist residue and other etching residue after etching or ashing is improved, and corrosion resistance of a copper and an insulating film is also improved.Type: GrantFiled: July 11, 2003Date of Patent: July 31, 2007Assignees: Renesas Technology Corp., Matsushita Electric Industrial Co., Ltd., EKC Technology K.K.Inventors: Itaru Kanno, Yasuhiro Asaoka, Masahiko Higashi, Yoshiharu Hidaka, Etsuro Kishio, Tetsuo Aoyama, Tomoko Suzuki, Toshitaka Hiraga, Toshihiko Nagai
-
Patent number: 7241725Abstract: The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.Type: GrantFiled: September 25, 2003Date of Patent: July 10, 2007Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.Inventor: Jinru Bian