Abstract: A memory includes a plurality of word lines each of which are connected to one or more memory cells, an address detection unit suitable for detecting a target address of a target word line among the plurality of word lines, wherein the target word line has an activation history satisfying a predetermined condition, and a control unit suitable for activating one or more word line among the plurality of word lines each time a refresh command is applied, and activating one or more adjacent word lines in response to a refresh command after detection of the target address, wherein the adjacent word line is adjacent to the target word line and identified by the target address.

Abstract: Word shift static random access memory (WS-SRAM) cell, word shift static random access memory (WS-SRAM) and method using the same employ dynamic storage mode switching to shift data. The WS-SRAM cell includes a static random access memory (SRAM) cell having a pair of cross-coupled elements to store data, a dynamic/static (D/S) mode selector to selectably switch the WS-SRAM cell between the dynamic storage mode and a static storage mode, and a column selector to selectably determine whether or not the WS-SRAM cell accepts shifted data. The WS-SRAM includes a plurality of WS-SRAM cells arranged in an array and a controller to shift data. The method includes switching a storage mode and activating a column selector of, coupling data from an adjacent memory cell to, and storing the coupled data in, a selected WS-SRAM cell.

Abstract: A memory system with a programmable refresh cycle including a memory device. The memory device includes refresh circuitry in communication with a memory array and with a memory controller. The refresh circuitry is configured for receiving a refresh command from the memory controller and for refreshing a number of memory cells in the memory device in response to receiving the refresh command. A refresh cycle time of the refresh command is programmable. The memory device also includes a programmable refresh cycle mode register in communication with the refresh circuitry. Contents of the programmable refresh cycle mode register indicate the refresh cycle time of the refresh command.

Abstract: Methods and devices for refreshing a dynamic memory device, (e.g., DRAM) to eliminate unnecessary page refresh operations. A value in a lookup table for the page may indicate whether valid data including all zeros is present in the page. When the page includes valid data of all zeros, the lookup table value may be set so that refresh, memory read, write and clear accesses of the page may be inhibited and a valid value may be returned. A second lookup table may contain a second value indicating whether a page has been accessed by a page read or write during the page refresh interval. A page refresh, by issuing an ACT?PRE command pair, and a page address may be performed according to the page refresh interval when the second value indicates that page access has not occurred.

Abstract: To include a plurality of core chips to which different pieces of chip information from each other are given in advance. A first refresh command is divided into a plurality of second refresh commands having different timings from each other, and a refresh operation is performed on a core chip for which a count value of the second refresh commands and at least a portion of the chip information match each other. With this configuration, even when the second refresh command is commonly supplied to a plurality of core chips, it is possible to shift a timing for the refresh operation in each of the core chips. Therefore, it is possible to reduce a peak current at the time of the refresh operation.

Abstract: This disclosure includes a method for preventing errors in a DRAM (dynamic random access memory) due to weak cells that includes determining the location of a weak cell in a DRAM row, receiving data to write to the DRAM, and encoding the data into a bit vector to be written to memory. For each weak cell location, the corresponding bit from the bit vector is equal to the reliable logic state of the weak cell and the bit vector is longer than the data.

Abstract: The invention is directed to a memory controller and an associated signal generating method. By appropriately arranging a sequence according to which command signals are generated and expanding a latching interval of a part of address signals, not only the memory controller is enabled to control the DDR memory modules in a functional manner to further overcome issues of conventionally small latching intervals, but also system stability and access performance are reinforced as the memory access clock speed continue to increase.

Abstract: Methods and structure for enabling re-training of a DDR memory controller in a storage device without loss of data in the DDR memory devices of the cache memory in response to detecting failure of the memory subsystem during operation of the storage device. In response to detecting a failure of the memory subsystem, the memory controller is reset without resetting the memory devices. The memory controller is then re-trained for operation with the memory device. During the re-training, self-refresh mode of the memory devices is disabled and manual refresh is performed by a processor of the storage device to thereby retain any user data in the memory device.

Abstract: A semiconductor memory device includes a memory core circuit having memory cells for storing data, a circuit configured to refresh the memory core circuit at a refresh interval, a temperature detecting unit configured to detect temperature, and a control circuit configured to shorten the refresh interval immediately in response to detection of a predetermined temperature rise by the temperature detecting unit and to elongate the refresh interval after refreshing every one of the memory cells at least once in response to detection of a temperature drop by the temperature detecting unit.

Abstract: A memory controller to provide memory access services in an adaptive computing engine is provided. The controller comprises: a network interface configured to receive a memory request from a programmable network; and a memory interface configured to access a memory to fulfill the memory request from the programmable network, wherein the memory interface receives and provides data for the memory request to the network interface, the network interface configured to send data to and receive data from the programmable network.

Abstract: Disclosed herein is an information processing system having first and second devices. The second device alternately issues a self-refresh command and a self-refresh exit command to the first device. The first device performs a refresh operation once in response to the self-refresh command and updates a state of a DLL circuit in response to the self-refresh exit command.

Abstract: Device, system, and method of memory allocation. For example, an apparatus includes: a Dual In-line Memory Module (DIMM) including a plurality of Dynamic Random Access Memory (DRAM) units to store data, wherein each DRAM unit includes a plurality of banks and each bank is divided into a plurality of sub-banks; and a memory management unit to allocate a set of interleaved sub-banks of said DIMM to a memory page of an Operating System, wherein a combined memory size of the set of interleaved sub-banks is equal to a size of the memory page of the Operating System.

Abstract: Provided is a refresh control device including: an arbitration operating unit configured to arbitrate (i) a memory access request for accessing a volatile memory that requires a refresh operation for holding data and (ii) a refresh trigger for requesting execution of the refresh operation; and a trigger generating unit configured to generate refresh triggers in a non-constant cycle to satisfy refresh-rate requirements defining the number of refresh operations necessary to be executed per predetermined period for the volatile memory to hold the data.

Abstract: Examples are disclosed for probabilistic dynamic random access memory (DRAM) row repair. In some examples, using a row hammer limit for DRAM and a maximum activation rate for the DRAM a probabilistic row hammer detection value may be determined. The probabilistic row hammer detection value may then be used such that a probability is acceptably low that a given activation to an aggressor row of the DRAM causes the row hammer limit to be exceeded before a scheduled row refresh is performed on one or more victim rows associated with the aggressor row. Other examples are described and claimed.

Abstract: In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.

Abstract: Examples are disclosed for determining a logical address of one or more victim rows of a volatile memory based on a logical address of an aggressor row and address translation schemes associated with the volatile memory. Other examples are described and claimed.

Abstract: In an illustrative embodiment, the memory circuit includes first and second data paths on which data is transferred for read and write memory operations and first and second mixer circuits for adjusting the phase of clock signals applied to their inputs. The mixer circuits are cross-coupled so that the outputs of the first and second mixers are both available to both the first and second data paths. One mixer is used to provide a first phase adjusted clock signal for use by the operating circuit and the other mixer is used to provide a second phase adjusted clock signal for use by a following operation whatever that may be.

Abstract: A method for selection of a DRAM refresh timing in a DRAM memory system is disclosed. The method may include running a workload for a first number of refresh intervals using a first DRAM refresh timing and making a first workload throughput measurement for the first number of refresh intervals. The method may also include running the workload for a second number of refresh intervals using a second DRAM refresh timing and making a second workload throughput measurement for the second number of refresh intervals. The method may further include deciding if the first throughput measurement is greater than the second throughput measurement, and then selecting the first DRAM refresh timing as a selected DRAM refresh timing, or deciding if the second throughput measurement is greater than the first throughput measurement, then selecting the second DRAM refresh timing as the selected DRAM refresh timing.

Abstract: Embodiments of a system and method for providing a flexible memory system are generally described herein. In some embodiments, a substrate is provided, wherein a stack of memory is coupled to the substrate. The stack of memory includes a number of vaults. A controller is also coupled to the substrate and includes a number of vault interface blocks coupled to the number of vaults of the stack of memory, wherein the number of vault interface blocks is less than the number of vaults.

Abstract: Methods, devices, and systems for a memory management system within an electronic device are disclosed, such as those wherein the memory management system is external to and compatible with architectures of currently existing operating systems. One such memory management system may include a power savings manager configured to be invoked by a memory allocation manager. The power savings manager may also be configured to determine whether physical memory blocks should be active or inactive. Furthermore, the memory management system may include a driver configured to activate or deactivate a memory block in response to a system call from the power savings manager.

Abstract: A method includes decreasing a programming step size from a first value to a second value for a block of a memory device. The programming step size is decreased at least partially based on determining that an error count corresponding to the block satisfies a threshold.

Abstract: Disclosed herein is a semiconductor device having a self-refresh mode in which a refresh operation of the storage data is performed. The semiconductor device activates an input buffer circuit that receives an impedance control command to control an impedance of the data terminal even in the self-refresh mode so that the semiconductor device can change an impedance of the data terminal during the self-refresh mode.

Abstract: A memory module includes a master memory device and at least one slave memory device. The master memory device may generate a refresh clock signal, and perform a refresh operation in synchronization with the refresh clock signal. The slave memory device may be connected to receive the refresh clock signal, and perform a refresh operation in synchronization with the refresh clock signal.

Abstract: The invention relates to a memory controller for use in a System-on-Chip, wherein the System-on-Chip comprises a plurality of agents and an off-chip volatile memory. The memory controller comprises a first port (CBP) for receiving low-priority requests (CBR) for access to the volatile memory from a first-subset of the plurality of agents and a second port (LLP) for receiving high-priority requests (LLR) for access to the volatile memory from a second-subset of the plurality of agents, wherein the memory controller is configured for arbitrating between the high-priority requests (LLR) and the low-priority requests (CBR), wherein the memory controller is configured for receiving refresh requests (RFR) for the volatile memory via the first port (CBP), wherein the refresh requests (RFR) are time-multiplexed with the low-priority requests (CBR), wherein the memory controller is configured for treating the low-priority requests (CBR) and the refresh requests (RFR) the same.

Abstract: For limiting data loss due to ATI or ATE, an apparatus may include a storage module, a tracking module, and a refresh module. The storage module is configured to store a risk value for a tracked storage division. The risk value indicates a risk level of data loss for the tracked storage division. The tracked storage division is one of a plurality of storage divisions of a data storage device. The tracking module is configured to update the risk value to indicate a higher risk level based on a write to a physically proximal storage division. The physically proximal storage division is within an interference range of the tracked storage division. The tracking module is configured to reset the risk value based on a write to the tracked storage division. The refresh module is configured to refresh the tracked storage division based on the risk value meeting a threshold value.

Abstract: A memory system with a programmable refresh cycle including a memory device that includes a memory array of memory cells and refresh circuitry that is in communication with the memory array and with a memory controller. The refresh circuitry is configured to receive a refresh command from the memory controller and for refreshing a number of the memory cells in the memory device in response to receiving the refresh command. The number of memory cells refreshed in response to receiving the refresh command is programmable.

Abstract: A DRAM refresh method used with a memory system organized into rows of memory cells, each of which has an associated data retention time, with the system arranged to refresh predefined blocks of memory cells simultaneously. For each block of memory cells that are to be refreshed simultaneously, the minimum data retention time for the memory cells in the block is determined. Then, an asymmetric refresh sequence is created which specifies the order in which the blocks of memory cells are refreshed, such that the blocks having the shortest minimum data retention times are refreshed more often than the blocks having longer minimum data retention times.

Abstract: A high-speed processor core having a plurality of individual FPGA-based processing elements configured in a synchronous or asynchronous pipeline architecture with direct processor-to-memory interconnectivity and having an auxiliary component functionality mapped into at least one of the processing elements.

Abstract: A method and system are provided for implementing enhanced memory performance management with configurable bandwidth versus power usage in a chip stack of memory chips. A chip stack of memory chips is connected in a predefined density to allow a predefined high bandwidth connection between each chip in the stack, such as with through silicon via (TSV) interconnections. Large-bandwidth data transfers are enabled from the memory chip stack by trading off increased power usage for memory performance on a temporary basis.

Abstract: On the fly switching from one memory device refresh rate to another is provided. Control logic associated with the memory device detects a condition to switch from a currently-applied refresh rate to a different refresh rate. In response to the condition, the refresh rate is dynamically switched. The switching does not require a change of a mode register. Thus, a refresh rate for the memory device can be dynamically changed on the fly.

Abstract: A data protection method adapted to a rewritable non-volatile memory module having a plurality of physical blocks is provided. The data protection method includes following steps. If the rewritable non-volatile memory module is powered on, a power-off period from last time the rewritable non-volatile memory module is powered off till present is obtained. If the power-off period is longer than a time threshold, whether each physical block satisfies an update condition is determined according to a block information of the physical block. An update procedure is executed on the physical blocks that satisfy the update condition. The update procedure is configured to read data from a physical block and rewrite the data into one of the physical blocks. Thereby, data in the physical blocks is protected from being easily lost, and the lifespan of the rewritable non-volatile memory module is prolonged.

Abstract: A data scrubbing apparatus corrects disturb errors occurring in a memory cell array, such as SMT MRAM cells. The data scrubbing apparatus activates scrubbing of the data and associated error correction bits based on a number of errors corrected, at a power up of the memory cell array, or a programmed time interval. The data scrubbing apparatus may generate an address describing the location of the memory cells to be scrubbed. The data scrubbing apparatus then commands the array of memory cells to write back the corrected data, the associated error correction bits, and reference bits. The data scrubbing apparatus provides a busy indicator externally during a write back of corrected data.

Abstract: A memory module includes a plurality of memory devices and a buffer chip. The buffer chip manages the memory devices. The buffer chip includes a refresh control circuit that groups a plurality of memory cell rows of the memory devices into a plurality of groups according to a data retention time of tire memory cell rows. The buffer chip selectively refreshes each of the plurality of groups in each of a plurality of refresh time regions that are periodically repeated and applies respective refresh periods to the plurality of groups, respectively.

Abstract: A memory subsystem can test a memory device in situ, testing the performance of the device in the system it is built into during production. Thus, the refresh rate can be adjusted specific to the memory device(s) of a specific system, rather than defaulting to a refresh frequency specified by a standard for the memory device(s). A test component embedded within the host memory subsystem can perform a test and identify specific bits or lines of memory that produce errors when a lower frequency refresh rate is used. The system maps out the identified bits or lines to prevent the bits/lines from being used in runtime of the system. The memory subsystem can then set its refresh rate to an adjusted refresh rate at which a threshold number of errors can be removed by mapping out the bits/lines.

Abstract: A memory controlling device and method are disclosed for controlling a memory having a partial array self refresh (PASR) function and a plurality of memory segments. The memory controlling device comprises an address mapper, an address decoder, an address selector, and a PASR configuration register storing a PASR configuration. The address mapper converts an input address set into a mapped address set according to an address offset. The mapped address set comprises a plurality of consecutive mapped addresses or at least one mapped address within a limited range. The address decoder updates the PASR configuration during writing. The address selector generates an updated address set, which is used for setting at least one mode register of the memory, according to the PASR configuration register under a sleep-or-standby mode in order that the memory can self refresh at least one of the memory segments correspondingly.

Abstract: Throttling of memory access commands. Accesses to rows of a memory device are monitored for a timeframe. The timeframe is divided into at least two sub-frames. If the number of accesses for any of the rows during a first sub-frame exceeds a first threshold throttling accesses to the accessed row at a first rate. Not throttling accesses to the accessed row if the number of accesses to the accessed row does not exceed the first threshold. The first threshold is associated with risk of data corruption on a row physically adjacent to the accessed row. If a number of accesses for the accessed row during a second sub-frame exceeds a second threshold, throttling accesses to the accessed row at a second rate. Not throttling accesses to the accessed row if the number of accesses to the accessed row does not exceed the second threshold. The second threshold is greater than the first threshold. The second throttling rate is greater than the first throttling rate.

Abstract: Disclosed herein is an information processing system having first and second devices. The second device alternately issues a self-refresh command and a self-refresh exit command to the first device. The first device performs a refresh operation once in response to the self-refresh command and updates a state of a DLL circuit in response to the self-refresh exit command.

Abstract: A computer system includes a memory controller coupled to a memory module containing several DRAMs. The memory module also includes a non-volatile memory storing row addresses identifying rows containing DRAM memory cells that are likely to lose data during normal refresh of the memory cells. Upon power-up, the data from the non-volatile memory are transferred to a comparator in the memory controller. The comparator compares the row addresses to row addresses from a refresh shadow counter that identify the rows in the DRAMs being refreshed. When a row of memory cells is being refreshed that is located one-half of the rows away from a row that is likely to loose data, the memory controller causes the row that is likely to loose data to be refreshed. The memory controller also includes error checking circuitry for identifying the rows of memory cells that are likely to lose data during refresh.

Abstract: The execution engine is a new organization for a digital data processing apparatus, suitable for highly parallel execution of structured fine-grain parallel computations. The execution engine includes a memory for storing data and a domain flow program, a controller for requesting the domain flow program from the memory, and further for translating the program into programming information, a processor fabric for processing the domain flow programming information and a crossbar for sending tokens and the programming information to the processor fabric.

Abstract: A memory controller is disclosed that provides refresh control circuitry to generate first refresh commands directed to a first row of storage cells within a memory device at a first rate. The refresh control circuitry generates second refresh commands directed to a second row of storage cells within the memory device at a second rate. Output circuitry outputs the first and second refresh commands to the memory device.

Abstract: A method for initiating a refresh operation of a solid-state nonvolatile memory device coupled to a processor is disclosed. The method comprises determining an error number for a block of the solid-state nonvolatile memory. The error number corresponds to an amount of error bits in a page of the block having a greatest amount of error bits. The method further comprises comparing the error number with an error threshold and determining a reset number indicating an amount of times that the processor has been reset since a previous refresh operation was performed on the block of the solid-state nonvolatile memory. The method further includes comparing the number of resets with a reset threshold and refreshing the block of the solid-state nonvolatile memory when the number of errors exceeds the error threshold and the number of resets exceeds the reset threshold.

Abstract: This disclosure includes a method for preventing errors in a DRAM (dynamic random access memory) due to weak cells that includes determining the location of a weak cell in a DRAM row, receiving data to write to the DRAM, and encoding the data into a bit vector to be written to memory. For each weak cell location, the corresponding bit from the bit vector is equal to the reliable logic state of the weak cell and the bit vector is longer than the data.

Abstract: Detection logic of a memory subsystem obtains a threshold for a memory device that indicates a number of accesses within a time window that causes risk of data corruption on a physically adjacent row. The detection logic obtains the threshold from a register that stores configuration information for the memory device, and can be a register on the memory device itself and/or can be an entry of a configuration storage device of a memory module to which the memory device belongs. The detection logic determines whether a number of accesses to a row of the memory device exceeds the threshold. In response to detecting the number of accesses exceeds the threshold, the detection logic can generate a trigger to cause the memory device to perform a refresh targeted to a physically adjacent victim row.

Abstract: A method of configuring infotainment applications in a motor vehicle is provided. A control unit is configurable via a configuration interface such that the functional scope and/or a basic setting of the infotainment application is changed based on first configuration data from a first configuration data server. A service center stationarily arranged at a distance from the motor vehicle has a second configuration data server and a second configuration data bank. The service center has a first modification interface by which configuration data of the second configuration data bank is modifiable using first access rights and a second Internet-based modification interface by which the configuration data is modifiable using second access rights differing from the first. Modifications of the configuration data are recognized and the configuration data of the first configuration data bank is changed by using the configuration data from the second configuration data bank.

Abstract: An apparatus for processing data 2 includes a memory 4 having a plurality of memory regions 28 to 38. A mapping controller 56 applies a variable mapping to map memory addresses of access requests to different regions within the memory 4. The mapping controller varies the mapping applied in dependence upon both one or more memory behavioral parameters indicative of behavioral characteristics of the different regions and one or more access behavioral parameters indicative of behavioral characteristics of an access request to be mapped. The memory behavioral parameters may include the temperature of the regions and/or the refresh period of the regions. The access behavior able parameters may include the quality of service level, the access frequency, the access volume and/or the identity of the source of the access request.

Abstract: A single-ended receiver includes an internal voltage generation circuit to set a first internal reference voltage (Vref). A model voltage generation circuit is configurable to receive an external reference voltage to be calibrated during an initial calibration. The model voltage generation circuit is configurable to track an offset value for voltage-temperature (VT) drift and the offset value is applied to the internal voltage generation circuit to calibrate the internal Vref during a periodic calibration of the single-ended receiver.

Abstract: The present invention has: a dynamic random access memory (DRAM); a refresh controller that receives information related to a range of the number of lost bits that are lost by stopping refresh processing of the DRAM, and controls a time to stop the refresh processing to achieve the range of the number of lost bits; and a physical information mapping unit that generates device specific information based on position information of the lost bits generated by stopping the refresh processing. It is preferable that the refresh controller corrects the time to stop the refresh processing based on the number of current lost bits to achieve the range of the number of lost bits set.

Abstract: Embodiments include a system, an apparatus, a device, and a method. The apparatus includes a processor, a dynamic memory, and a hardware-implemented memory control circuit. The hardware-implemented control circuit includes a control circuit for establishing an extended refresh period of the dynamic memory based at least in part on a monitored result that indicates an occurrence of a memory loss in the dynamic memory. The hardware-implemented control circuit also includes a control circuit for causing a refresh of the dynamic memory during each of at least two extended refresh periods.

Abstract: An information handling system (IHS) includes a memory controller, a memory device, and firmware. A failing memory region and a spare memory region are included on the memory device. A memory buffer in the memory device is coupled to the failing memory region and the spare memory region. The memory buffer is operable to perform copy operations without instruction from the memory controller in order to copy data from the failing memory region to the spare memory region in response to firmware operations performed by the firmware. Firmware operations may include instructing the memory controller to produce additional refresh or calibration operation time periods, or providing an instruction to perform a data transfer operation to the spare memory region. The memory buffer is also operable to route requests from the memory controller to one of the failing memory region and the spare memory region during the copy operations.

Abstract: A system includes multiple master devices and at least one memory refresh scheduler. When a master device needs higher priority for memory access, the master device sends a dynamic priority signal to the memory refresh scheduler and in response, the memory refresh scheduler changes its policy for issuing refresh commands.