Abstract: Apparatuses and techniques for implementing a data-transfer test mode are described. The data-transfer test mode refers to a mode in which the transfer of data from an interface die to a linked die can be tested prior to connecting the interface die to the linked die. In particular, the data-transfer test mode enables the interface die to perform aspects of a write operation and output a portion of write data that is intended for the linked die. With the data-transfer test mode, testing (or debugging) of the interface die can be performed during an earlier stage in the manufacturing process before integrating the interface die into an interconnected die architecture. For example, this type of testing can be performed at a wafer level or at a single-die-package (SDP) level. In general, the data-transfer test mode can be executed independent of whether the interface die is connected to the linked die.

Abstract: The invention relates to a detection circuit, a detection method, an electronic device, and a computer-readable storage medium. The detection circuit includes: an error correction coding module configured to obtain data to be checked, and perform, based on an error correction coding logic, error correction coding on the data to be checked, to output target coded data; a data mask interface configured to receive comparison coded data, where the comparison coded data is associated with ideally coded data of the data to be checked; a comparison checking module configured to perform a checking comparison on the target coded data and the comparison coded data to output a checking comparison result; and a logic verification module configured to determine a coding verification result of the error correction coding module based on the checking comparison result. The comparison checking data verifies correctness of the error correction coding logic.

Abstract: Methods, systems, and devices related to error detection code generation techniques are described. A memory device may identify a first set of bits for transmission to a host device and calculate an error detection code associated with the first set of bits. Prior to transmitting the first set of bits, the memory device may modify one or more bits of the first set of bits to generate a second set of bits for transmission from the memory device to the host device. The memory device may modify one or more bits of the first error detection code to generate a second error detection code based on a parity of the modified one or more bits of the first set of bits. The memory device may transmit the second set of bits and the second error detection code to the host device.

Abstract: A method for accessing a memory module includes; encoding first data of a first partial burst length to generate first parities and first cyclic redundancy codes, encoding second data of a second partial burst length to generate second parities and second cyclic redundancy codes, writing the first data and the second data to first memory devices, and writing the first parities, the first cyclic redundancy codes, the second parities, and the second cyclic redundancy codes to a second memory device and a third memory device.

Abstract: A memory device includes a semiconductor memory including a plurality of memory cells, and a controller including a buffer which temporarily stores data, a data pattern check circuit which checks a predetermined data pattern of data that are stored in the buffer and are to be stored in a plurality of neighboring ones of the memory cells, and sends an address in accordance with a result of the check, and a data correction circuit which corrects a value of data at the address that is sent, and sends the corrected value to the semiconductor memory.

Abstract: Memory devices that, in a particular embodiment, receive and transmit analog data signals representative of bit patterns of two or more bits such as to facilitate increases in data transfer rates relative to devices communicating data signals indicative of individual bits. Programming error correction code (ECC) and metadata into such memory devices includes storing the ECC and metadata at different bit levels per cell based on an actual error rate of the cells. The ECC and metadata can be stored with the data block at a different bit level than the data block. If the area of memory in which the block of data is stored does not support the desired reliability for the ECC and metadata at a particular bit level, the ECC and metadata can be stored in other areas of the memory array at different bit levels.

Abstract: According to one embodiment, a data storage apparatus including memory chips includes an error correction encoder, a RAID controller, error detectors and memory units. Each of the memory chips includes a semiconductor memory. The error correction encoder adds an error correction code to an encoded data stream. The RAID controller divides the encoded data stream from the error correction encoder into data blocks. The RAID controller generates a parity data block based on the data blocks. The RAID controller outputs the data blocks and parity data block to the error detectors, respectively. The error detectors add an error detection code to the data blocks and parity data block output from the RAID controller. Each of the memory units includes the memory chips. The memory units write the data blocks and parity data block from the error detectors to the memory chips.

Abstract: Techniques are provided for performing Galois field arithmetic to detect errors in digital data stored on disks. Two 12-bit numbers or two 10-bit numbers are multiplied together in Galois field using tower arithmetic. In the 12-bit embodiment, a base field GF(2) is first extended to GF(23), GF(23) is extended to a first quadratic extension GF(26), and GF(26) is extended to a second quadratic extension GF(212). In the 10-bit embodiment, the base field GF(2) is first extended to GF(25), and GF(25) is extended to a quadratic extension GF(210). Each of the extensions for the 10-bit and 12-bit embodiments is performed using an irreducible polynomial. All of the polynomials used to generate the first and the second quadratic extensions of the Galois field are in the form x2+x+K, where K is an element of the ground field whose absolute trace equals 1.

Abstract: A data processing device for detecting and correcting data errors of a re-writable memory via an error correction algorithm. In one embodiment, the data processing device includes a coding unit implemented in hardware and an error correction unit implemented in software. In one embodiment, the coding unit is capable receiving a first set of data to be written to the memory and processing that data in accordance with an error correction algorithm to form a second set of data. The second set of data may be output to memory. In one embodiment, the coding unit receives data from the memory and processes that data in accordance with the error correction algorithm to determine whether the data contains an error. In one embodiment, the error correction unit receives data that contains an error and produces corrected data via an error correction algorithm. The corrected data may be output to the memory.