Abstract: In some implementations, a memory device may receive a command to read data in a first format from non-volatile memory, the data being stored in a second format in the non-volatile memory, the second format comprising a plurality of copies of the data in the first format. The memory device may compare, using an error correction circuit, the plurality of copies of the data to determine a dominant bit state for bits of the data. The memory device may store the dominant bit state for bits of the data in the non-volatile memory as error-corrected data in the first format. The memory device may cause the error-corrected data to be read from the non-volatile memory in the first format as a response to the command to read the data in the first format.

Abstract: A memory system includes a memory module that includes a first memory device through a fourth memory device and a first error correction code (ECC) device, and a memory controller that exchanges first user data with each of the first memory device through the fourth memory device through 8 data lines and exchanges first ECC data with the first ECC device through 4 data lines. The memory controller includes an ECC engine that corrects a 32-random bit error of the first user data, based on the first ECC data.

Abstract: Methods, systems, and devices for temperature-based scrambling for error control in memory systems are described. Techniques are described for a memory system to scramble data using different scrambling code parameters when writing the data at different temperatures. Scrambling the data using scrambling code parameters that are based on the temperatures at the time or writing the data may reduce errors introduced into the data by operating the memory cells at extreme temperatures.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory including physical blocks, and a controller. The controller manages namespaces. The namespaces include at least a first namespace for storing a first type of data, and a second namespace for storing a second type of data having a lower update frequency than the first type of data. The controller allocates a first number of physical blocks as a physical resource for the first namespace, and allocates a second number of physical blocks as a physical resource for the second namespace, based on a request from a host device specifying an amount of physical resources to be secured for each of the namespaces.

Abstract: A semiconductor device includes a syndrome generation circuit configured to generate a syndrome code based on data and an error correction code corresponding to the data, an error determination circuit configured to detect a 1-bit error in the data based on the syndrome code, and multi-bit error detection circuit configured to determine whether the data detected to have 1-bit error includes a multi-bit error by using an error address of the data detected to have 1-bit error and an error syndrome code of the data detected to have 1-bit error.

Abstract: A storage controller includes parallel input channels configured for simultaneously receiving data from substantially redundant memories, an error estimation unit, a decision unit, an error correction unit and a selection unit. The error estimation unit generates error information by estimating an error level of the plurality of data. The decision unit performs a logical operation on the plurality of data to generate operation data. The error correction unit generates error correction data by correcting an error of the operation data. The selection unit selects one of the operation data or the error correction data based on the error information.

Abstract: Apparatuses and methods related to implementing refresh and access modes for memory. The refresh and access modes can be used to configure a portion of memory. The portions of memory can correspond to protected regions of memory. The refresh and access modes can influence the security level of data stored in the protected regions of memory.

Abstract: Systems, apparatuses, and methods for transmission failure feedback associated with a memory device are described. A memory device may detect errors in received data and transmit an indication of the error when detected. The memory device may receive data and checksum information for the data from a controller. The memory device may generate a checksum for the received data and may detect transmission errors. The memory device may transmit an indication of detected errors to the controller, and the indication may be transmitted using a line that is different than an error detection code (EDC) line. A low-speed tracking clock signal may also be transmitted by the memory device over a line different than the EDC line. The memory device may transmit a generated checksum to the controller with a time offset applied to the checksum signaled over the EDC line.

Abstract: A memory module includes; dynamic random access memories (DRAMs), a controller configured to control operation of the DRAMs, and an active device configured, in response to detection of an error occurring in at least one of the DRAMs, to generate an interrupt and store error information corresponding to the error.

Abstract: Memory devices may have an array of elements in two or more dimensions. The memory devices use multiple access lines arranged in a grid to access the memory devices. Memory cells located at intersections of the access lines in the grid. Drivers are used for each access line and configured to transmit a corresponding signal to respective memory cells of the plurality of memory cells via a corresponding access line. The memory devices may use an address scrambler to determine a bit error rate for accessing memory cells and remap an address of a particular memory cell to have a bit error rate below a threshold. In this way, the address scrambler may distribute the bit error rates of multiple accesses of the array.

Abstract: An apparatus includes an error correction component coupled to read recovery control circuitry. The error correction component can be configured to perform one or more initial error correction operations on codewords contained within a managed unit received thereto. The read recovery control circuitry can be configured to receive the error corrected codewords from the error correction component and determine whether codewords among the error corrected codewords contain an uncorrectable error. The read recovery control circuitry can be further configured to determine that a redundant array of independent disks (RAID) codeword included in the plurality of error corrected codewords contains the uncorrectable error, request that codewords among the error corrected codewords that contain the uncorrectable error are rewritten in response to the determination, and cause the plurality of error corrected codewords to be transferred to a host coupleable to the read recovery control circuitry.

Abstract: A datum is written to a memory, by splitting a binary word, representative of the datum and an error correcting or detecting code, into a first part and a second part. The first part is written at a logical address in a first memory circuit. The second part is written at the logical address in a second memory circuit. The error correcting or detecting code is dependent on both the datum and the logical address.

Abstract: A data storage system configured to adaptively code data is disclosed. In one embodiment, a data storage system controller determines a common memory page size, such as an E-page size, for a non-volatile memory array. Based on the common memory page size, the controller selects a low-density parity-check (LDPC) code word length from a plurality of pre-defined LDPC code word lengths. The controller determines LDPC coding parameters for coding data written to or read from the memory array based on the selected LDPC code word length. By using the plurality of pre-defined LDPC code word lengths, the data storage system can support multiple non-volatile memory page formats, including memory page formats in which the common memory page size does not equal any LDPC code word length of the plurality of pre-defined LDPC code word lengths. Flexibility and efficiency of data coding can thereby be achieved.

Abstract: Some embodiments relate to a Direct Memory Access (DMA) controller. The DMA controller includes a set of transaction control registers to receive a sequence of transaction control sets that collectively describe a data transfer to be processed by the DMA controller. A bus controller reads and writes to memory while the DMA controller executes a first transaction control set to accomplish part of the data transfer described in the sequence of transaction control sets. An integrity checker determines an actual error detection code based on data or an address actually processed by the DMA controller during execution of the first transaction control set. The integrity checker also selectively flags an error based on whether the actual error detection code is the same as an expected error detection code contained in a second transaction control set of the sequence of transaction control sets.

Abstract: The present invention is directed to a method for completing a stripe write operation in a timely fashion to a RAID drive pool which includes an abnormally slow drive. For example, the stripe write operation either completes within a required time interval, or an error is provided to the host/initiator which provides an indication to an application that the stripe write operation did not complete.

Abstract: A method and apparatus for implementation of error correction code (ECC) checking in non-ECC-compliant components. The method includes receiving a logical address, wherein the logical address maps to first and second physical addresses of a memory. The first and second physical addresses of the memory correspond to memory locations that store data and a corresponding ECC, respectively. The method further comprises translating the logical address into the first and second physical addresses, accessing the data over a data path, separately accessing the ECC over the same data path, and checking the integrity of the data using the ECC.

Abstract: A memory system according to the embodiment comprises a p-adic number converter unit operative to convert ?-digit, h-bit symbols to a k-digit, p-adic data word (p is a prime of 3 or more); an encoder unit operative to generate, from the p-adic data word, a code C composed of a residual field Zp of the prime p; a memory unit operative to store the code C as write data; an error correcting unit operative to apply an operation using a syndrome S generated from read data Y for error correcting the read data Y to regenerate the code C; a decoder unit operative to reverse-convert the code C to regenerate the p-adic data word; and a binary converter unit operative to convert the data word to a binary number to regenerate the binary data D.

Abstract: Data scrambling techniques implemented externally to a flash memory device are disclosed which can be used in concert with flash memory on-chip copy functionality operating internally to the flash device, thus supporting high performance copying operations. All the data stored in the flash may be scrambled, including headers and control structures. Robust file system operation may be achieved, including the capability to tolerate a power loss at any time, and yet be able to relocate data internally within the flash without having to de-scramble and then re-scramble the data. An exemplary hardware based solution has little or no impact on overall system performance, and may be implemented at very low incremental cost to increase overall system reliability. The data scrambling technique preferably uses a logical address, such as logical block address or logical page address, rather than a physical address, to determine a seed scrambling key.

Abstract: An exemplary memory subsystem with fault isolation comprises a first data bus routing data groupings in a lower 72 bits to a first memory expander, and a second data bus routing data groupings in an upper 72 bits to a second memory expander. A first memory module receives all of the data groupings in the lower 72 bits of each memory expander. A second memory module receives all of the data groupings in the upper 72 bits of each memory expander. A failure in any one or more bytes in an ECC word indicate failures in the computer memory system.