Abstract: A gas sensor having high detection sensitivity and a low output signal noise includes a laminate of thermistor ceramic, a catalytic electrode, an internal electrode, and external electrodes. When coming into contact with a detection target gas, the catalytic electrode generates heat, and the resistance of a thermistor layer of a sensing portion is decreased. Since the heat generated by the catalytic electrode is directly transferred to the thermistor layer without passing through an insulating layer or the like, high detection sensitivity is obtained. In addition, the structure can be formed in which heat of the sensing portion is insulated by a hollow portion and heat diffusion is prevented, so that the heat capacity of the sensing portion is further decreased.

Abstract: A gas detection system is provided. The system includes a sample gas inlet configured to receive a sample of gas and a sample chamber operably coupled to the sample gas inlet. The sample chamber has at least one gas sensor disposed therein. The gas sensor provides a gas sensor output indicative of a species of interest in the sample of gas. A controller is coupled to the at least one gas sensor and is configured to provide information related to the species of interest based on the gas sensor output. A moisture removal device is disposed to receive the sample of gas and remove moisture from the sample before the sample reaches the at least one gas sensor.

Abstract: A method for sensing analyte. The method includes the steps of sensing one or more parameters in reaction to the presence of one or more analytes and outputting a current therefrom in accordance with level of the sensed parameter by each of a plurality of sensors, each of the plurality of sensors being provided in one or more sensor array columns, selectively heating one or more of the sensor array columns by a heating element, and receiving an output current from one of the plurality of sensors from each of the plurality of sensor arrays by a Voltage Controlled Oscillator (VCO) arranged in a VCO array. The method further includes the steps of generating an output oscillation frequency by each VCO in accordance with the level of the received output current, and counting a number of oscillations over a predetermined time received from each of the plurality of VCOs in the VCO array by a plurality of counters arranged in a counter array.

Abstract: A gas sensor is disclosed. The gas sensor includes a gas sensing layer, at least one electrode, an adhesion layer, and a response modification layer adjacent to said gas sensing layer and said layer of adhesion. A system having an exhaust system and a gas sensor is also disclosed. A method of fabricating the gas sensor is also disclosed.

Abstract: Disclosed are an MEMS type semiconductor gas sensor using a microheater having many holes and a method for manufacturing the same. The MEMS type semiconductor gas sensor includes: a substrate of which a central region is etched with a predetermined thickness; a second membrane formed at an upper portion of the central region of the substrate and having many holes; a heat emitting resistor formed on the second membrane and having many holes; a first membrane formed on the second membrane including the heat emitting resistor and having many holes; a sensing electrode formed on the first membrane and having many holes; and a sensing material formed on the sensing electrode.

Abstract: The invention provides devices, systems, and methods for detecting an analyte vapor. Particularly, electronegative analyte vapors, such as those vapors evolving from explosive compounds, are typical analytes detected the devices. The devices operate using a resistivity change mechanism wherein a nanostructured chemiresistive material undergoes a resistivity change in the presence of an analyte vapor. A resistivity change indicates the presence of an analyte.

Abstract: A sensor for detecting hydrogen or ammonia gas uses a gas sensitive material based on Cr2O3 with a small percentage of the chromium replaced by transition metal ions having a valency greater than four, but still having a corundum crystal structure. Electrodes in contact with the gas sensitive material are connected by conductors to electrical measuring means for measuring the resistance, conductance, capacitance, or impedance of the gas sensitive material. A temperature sensing means and heating means allow the temperature of the gas sensitive material to be regulated. The gas sensitive material is formed on an insulator substrate over one or both electrodes. One electrode can be on the non-substrate side of the gas sensitive material. The gas sensitive material can be formed by deposition from a suspension or colloidal dispersion and firing. The gas sensitive material is contacted with gas and changes in electrical properties of the material are observed.

Abstract: A method for determining the interstitial oxygen concentration of a sample made from a p-doped semiconductor material includes a step of heat treatment of the sample in order to form thermal donors, determining the duration of the heat treatment required to obtain a compensated semiconductor material, determining the thermal donors concentration in the sample of compensated semiconductor material, from the charge carriers concentration, and determining the oxygen concentration from the thermal donors of and the duration of the heat treatment.

Abstract: A composition of graphene-based nanomaterials and a method of preparing the composition are provided. A carbon-based precursor is dissolved in water to form a precursor suspension. The precursor suspension is placed onto a substrate, thereby forming a precursor assembly. The precursor assembly is annealed, thereby forming the graphene-based nanomaterials. The graphene-based nanomaterials are crystallographically ordered at least in part and configured to form a plurality of diffraction rings when probed by an incident electron beam. In one aspect, the graphene-based nanomaterials are semiconducting. In one aspect, a method of engineering an energy bandgap of graphene monoxide generally includes providing at least one atomic layer of graphene monoxide having a first energy bandgap, and applying a substantially planar strain is applied to the graphene monoxide, thereby tuning the first energy band gap to a second energy bandgap.

Abstract: A gas sensitive material comprising SnO2 nanocrystals doped with In2O3 and an oxide of a platinum group metal, and a method of making the same. The platinum group metal is preferably Pd, but also may include Pt, Ru, Ir, and combinations thereof. The SnO2 nanocrystals have a specific surface of 7 or greater, preferably about 20 m2/g, and a mean particle size of between about 10 nm and about 100 nm, preferably about 40 nm. A gas detection device made from the gas sensitive material deposited on a substrate, the gas sensitive material configured as a part of a current measuring circuit in communication with a heat source.

Abstract: A method of making a sub-miniature “micro-chip” oxygen sensor is provided where multiple sensor elements are applied to a dielectric ceramic substrate consisting of a heater pattern, followed by a dielectric layer. Intermeshing electrodes are then applied either over the heater pattern/dielectric layers or on the opposite side of the substrate. The space between the intermeshing electrodes is filled with an n-type or p-type high temperature semiconductor which is covered by a porous protection layer. After singulation (dicing), the sensor element is assembled having conductors applied to the contact pads on the element and is packaged in an assembly for introduction to the exhaust stream of a combustion process. A large step-wise change in the resistance of the element takes place as a result of changes in oxygen content in the exhaust whereby one can determine if the exhaust is rich or lean for use in an engine management or combustion management systems for emissions control.

Abstract: A gas sensor is provided. The gas sensor includes a gas-sensitive layer which changes in its characteristic properties upon contact with a detectable gas. The gas-sensitive layer has as the main sensitive part, a polycrystalline layer composed of a large number of uniform nano-size microcrystal grains which join together in the planar direction.

Abstract: Exemplary embodiments provide a self-powered wireless gas sensor system and a method for gas sensing using the system. The system can be used to detect and constantly track a presence of various gases including hydrogen, ozone and/or any hydrocarbon gas, and remotely transmit the sensing signal. The system can include a low power gas sensor that consumes less than about 30 nano-watts of power. As a result, the system can detect the presence of hydrogen at about 10 ppm. The sensor can also provide a fast response time of about 1-2 seconds. In various embodiments, the system can be physically small and packaged with all components assembled as a single compact unit.

Abstract: A biological gas detection apparatus of an embodiment of the present invention includes: a sensor unit including plural types of gas sensors; a control unit of the sensor unit; a data recording unit; and a data analyzing unit, wherein the data recording unit includes a database on properties of sensitivities of the gas sensors for a single body of a desired gas component, a single body of an interference gas component, and a mixed gas of these that are included in the biological gas, and the data analyzing unit calculates concentration of the desired gas component based on sensitivities of the gas sensors output when detecting the biological gas and the database.

Abstract: A metal oxide sensor employing a method of heating that reduces the power required to heat the sensor to an optimal operating temperature and a method to automatically regulate and maintain the temperature of the sensors in the presence of air currents and other ambient conditions. The ultra miniature metal oxide sensors used have a thermal time constant short enough to allow for heating of the ultra miniature metal oxide sensors to occur with very narrow pulses of electricity. Such narrow pulses used to heat the sensor and to maintain the temperature such that the methods for reducing the power requirement apply throughout sensor's operation.

Abstract: A method of the invention includes preparing a mold having a hydrogen detection part pattern, a nanogap pattern and a base to be formed on a hydrogen sensor substrate; preparing a material to which the patterns are transferrable; forming the hydrogen sensor substrate by bringing the mold into contact with the material to thus transfer the patterns to the material and then detaching the mold from the material to which the patterns are transferred, the hydrogen sensor substrate having a base part corresponding to the base, a plurality of hydrogen detection parts erected from the base part and corresponding to the nanogap pattern and a plurality of nanogaps formed between the hydrogen detection parts and corresponding to the hydrogen detection part pattern; and forming, on the hydrogen sensor substrate, a thin film of a transition metal or an alloy thereof to be expanded by hydrogen.

Abstract: A sensor apparatus includes a metal oxide semiconductor (“MOS”) sensor with a gas-sensing surface normally having a first sensitivity to a first species of flammable gas and a second sensitivity to a second, different species of flammable gas. A selective sensitivity-enhancement layer is disposed on the gas-sensing surface such that the first sensitivity becomes increased and the second sensitivity remains substantially unchanged.

Abstract: Systems and methods for discriminating among volatile compounds is provided using a semiconductor junction structure or sensor device. Sensor devices of the present disclosure employ a combination of hole carriers (p-type) and electron carriers (n-type) metal oxides deposited, for example, on a gold microspring array designed so that it has several leads that are at different distances from each other.

Abstract: Some aspects of the present disclosure relate to a sensor design that exploits the different majority carriers (holes/electrons) in WO3 and Cr2O3 to build sensitivity and selectivity to NO at ppb levels, while discriminating against CO at concentrations a thousand-fold higher (ppm) and spread over a considerable range (0-20 ppm). Practical application of this sensor system for detecting NO in human breath is demonstrated.

Abstract: A gas sensor for sensing chemical gases utilizes a metal oxynitride as the sensing material, which changes its conductivity when exposed to the analyte gas. The change in conductivity is measured for the sensor output. The metal may be either tungsten or molybdenum.

Abstract: A gas detection device comprising a measuring circuit, said measuring surface comprising a substrate, a resistance heater bonded to said substrate and a coating, said coating comprising SnO2 nanoparticles doped with In2O3 nanoparticles and Pd oxide, said Pd oxide being formed from a solution of a Pd salt, such as PdCl2. The SnO2 nanocrystals have a specific surface of at least about 50 m2/g, a mean particle size of between about 5 nm and about 20 nm, and the contact points between individual nanoparticles of SnO2 and In2O3 and the associated Pd oxide are less than about 100 ?. The Pd salt solution is a solution of a palladium chloride in a dilute acid solution, such as HCl. The palladium salt to an oxide of palladium at an elevated temperature, as for example, by calcining said oxide of palladium. The palladium Marked Copy oxide is in the form of a coating on nanoparticles of SnO2 and In2O3.

Abstract: Devices and methods for fast, sensitive hydrogen gas detection using a single palladium nanowire. In one embodiment, a hydrogen sensor comprises a palladium nanowire extending between metal contacts. The palladium nanowire is not subject to fracturing when exposed to hydrogen. The nanowire is able to rapidly and reversibly detect hydrogen as a resistance increase down to 2 ppm with excellent reproducibility and baseline stability at room temperature.

Abstract: The gas sensor has a substrate, a gate insulating film arranged on the substrate, and a gate electrode arranged on the gate insulating film, wherein the gate electrode comprises a metal oxide mixture film produced by mixing an oxygen-doped amorphous metal that contains oxygen with crystals of an oxide of the metal and a platinum film formed on the metal oxide mixture film, the platinum film is composed of multiple platinum crystal grains and grain boundary regions that are present between the platinum crystal grains, the grain boundary regions are filled with a metal oxide mixture, and each of the platinum crystal grains is surrounded by the metal oxide mixture.

Abstract: A gas sensor includes a substrate having a low thermal conductivity. Localized heating can be produced using a serpentined heater carried by the substrate. The low thermal conductivity of the substrate substantially confines the generated heat to a region local to the heater thereby reducing required power to operate the sensor. Multiple sensing elements can be deposited onto the substrate adjacent to respective heaters and relatively close together because of the thermal isolation provided by the substrate. In one embodiment, the sensor can include the ceramic substrate, the heater, catalytic material overlying the heater with a gas impermeable layer overlying, at least in part the catalytic material.

Abstract: A method and apparatus for sensing analyte. The method includes the steps of sensing one or more parameters in reaction to the presence of one or more analytes and outputting a current therefrom in accordance with level of the sensed parameter by each of a plurality of sensors, each of the plurality of sensors being provided in one or more sensor array columns, receiving an output current from one of the plurality of sensors from each of the plurality of sensor arrays by a Voltage Controlled Oscillator (VCO) arranged in a VCO array. The method further includes the steps of generating an output oscillation frequency by each VCO in accordance with the level of the received output current, and counting a number of oscillations over a predetermined time received from each of the plurality of VCOs in the VCO array by a plurality of counters arranged in a counter array.

Abstract: A semiconductor gas sensor is provided that has a gas-sensitive gate electrode separated by a gap from a channel region and is embodied as a suspended gate field effect transistor or the gate electrode is arranged as a first plate of a capacitor with gap and a second plate of the capacitor is connected to a gate of the field effect transistor embodied as capacitively controlled and the gate electrode has a conductive carrier layer with a bearing adhesion promoter layer and a gas-sensitive layer bearing on the adhesion promoter layer, wherein the gate electrode as a gas-sensitive layer has a platinum/gold alloy with a gold proportion in a range of 1% to 20% and a polymer layer with a thickness of less than 100 nm is embodied on the surface of the platinum/gold alloy and the gap is filled with an oxygen-free gas mixture.

Abstract: A semiconductor-based gas detector enhances the collection of gas molecules and also provides a self-contained means for removing collected gas molecules by utilizing one or more electric fields to transport the gas molecules to and away from a metallic material that has a high permeability to the gas molecules.

Abstract: Disclosed are a composite separation membrane structure for a gas sensor for real-time monitoring of degradation of insulating oil of a power transformer, a gas sensor apparatus including the same, and a method and an apparatus for measuring gas concentration using the same. It is possible to locally diagnose whether there is a fault in the power transformer and what kind of fault occurs where in the power transformer by quantitatively measuring the concentration of several gases dissolved in the insulating oil in real time. As a result, breakdown of the power transformer may be prevented and remaining service life of the insulating oil in the power transformer may be predicted.

Abstract: A method of increasing the operating life of a semiconductor device that is to be used in a harsh ionizing radiation environment including determining heating criteria for annealing the device; installing the device in an electronic apparatus; and heating the installed device with a local heating source in accordance with the heating criteria.

Abstract: A method for sensing analyte. The method includes the steps of sensing one or more parameters in reaction to the presence of one or more analytes and outputting a current therefrom in accordance with level of the sensed parameter by each of a plurality of sensors, each of the plurality of sensors being provided in one or more sensor array columns, selectively heating one or more of the sensor array columns by a heating element, and receiving an output current from one of the plurality of sensors from each of the plurality of sensor arrays by a Voltage Controlled Oscillator (VCO) arranged in a VCO array. The method further includes the steps of generating an output oscillation frequency by each VCO in accordance with the level of the received output current, and counting a number of oscillations over a predetermined time received from each of the plurality of VCOs in the VCO array by a plurality of counters arranged in a counter array.

Abstract: An apparatus for sensing analyte is provided. The apparatus may include a plurality of sensor array columns, each sensor array column including a plurality of sensors, each sensor being adapted for sensing one or more parameters in reaction to the presence of one or more analytes and output a current therefrom in accordance with level of the sensed parameter, a heating element for selectively heating one or more of the sensor array columns, a Voltage Controlled Oscillator (VCO) array including a plurality of VCOs, each VCO adapted to receive an output current from one of the plurality of sensors from each of the plurality of sensor arrays and for and generating an output oscillation frequency in accordance with the level of the received output current, and a counter array including a plurality of counters, each counter adapted to receive an output from a corresponding VCO and count a number of oscillations over a predetermined time.

Abstract: An apparatus for sensing analyte is provided. The apparatus may include a plurality of sensor array columns, each sensor array column including a plurality of sensors, each sensor being adapted for sensing one or more parameters in reaction to the presence of one or more analytes and output a current therefrom in accordance with level of the sensed parameter, a Voltage Controlled Oscillator (VCO) array including a plurality of VCOs, each VCO adapted to receive an output current from one of the plurality of sensors from each of the plurality of sensor arrays and for and generating an output oscillation frequency in accordance with the level of the received output current, and a counter array including a plurality of counters, each counter adapted to receive an output from a corresponding VCO and count a number of oscillations over a predetermined time.

Abstract: The application describes methods and apparatus for chemical sensing, e.g. gas sensing, which have high sensitivity but low power operation. A sensor is described having a flexible membrane comprising a III/N heterojunction structure configured so as to form a two dimensional electron gas within said structure. A sensing material is disposed on at least part of the flexible membrane, the sensing material being sensitive to one or more target chemicals so as to undergo a change in physical properties in the presence of said one or more target chemicals. The sensing material is coupled to said heterojunction structure such that said change in physical properties of the sensing material imparts a change in stress within the heterojunction structure which modulates the resistivity of the two dimensional electron gas.

Abstract: Improved measurement accuracy for determining the flow rate of precursor vapor to the deposition tool, particularly for use with low vapor pressure precursors, such as ruthenium carbonyl (Ru3(CO)12) or rhenium carbonyl (Re2(CO)10). In one embodiment, the system includes a differential pressure manometer is provided for measuring the flow rate. A method of measurement and calibration is also provided.

Abstract: In a method for operating a semiconductor gas sensor, the gas sensor including at least one gas-sensitive electrode, the method may provide for impression of a voltage sequence on the gas-sensitive electrode. The operation may take place in a measuring cycle which is subdivided into at least one initialization phase and at least one subsequent measuring phase, a first voltage sequence being impressed on the gas-sensitive electrode during the initialization phase, a second voltage sequence being impressed on the gas-sensitive electrode during the measuring phase, and the first voltage sequence differing from the second voltage sequence. A semiconductor gas sensor may be provided for implementing the method according to the invention, and a method may relate to the use of such a sensor.

Abstract: Disclosed are a gas sensor, and a method of manufacturing and using the same. The method includes: forming a detection material on a heater; coating an encapsulant on the detection material; and heating the heater to remove the encapsulant from the detection material when the gas sensor is operated.

Abstract: A gas sensor for determining gas components in gas mixtures, e.g., for exhaust gases of internal combustion engines, includes a housing and a sensor element configured as a field effect transistor which has source, drain, and gate electrodes applied on a semiconductor substrate. A porous, catalytically active material is provided inside the housing of the gas sensor.

Abstract: The present invention provides a temperature and humidity measuring and recording device deployed on substrate for measuring and recording temperature and humidity of the interior of any station for reticles and of any SMIF POD. The temperature and humidity measuring and recording device comprises a substrate with a first surface and a second surface opposite to the first surface on another side of the substrate, a first measurement unit embedded in and fixed to the first surface of the substrate for measuring the temperature and humidity of the surrounding environment, and a second measurement unit embedded in and fixed to the second surface of the substrate for measuring the temperature and humidity of the interior between the substrate and the pellicle film.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: Between a gas sensing layer (4) and a base member (15) composed of a silicon substrate (2) and an insulating coat layer (3), there is formed an adhesion layer 7, to improve the adhesion therebetween, and to prevent separation. The gas sensing layer (4) and sensing electrodes (6) are electrically connected by abutment of a confronting surface (61) of sensing electrodes (6) confronting the gas sensing layer (4) and sides surfaces of the sensing electrodes on both sides, on the gas sensing layer (4), and accordingly the gas sensor properly senses an electric characteristic of the gas sensing layer (4) varied in accordance with a concentration variation of a specified gas. Furthermore, the sensing electrodes (6) are in contact with the gas sensing layer (4), but the sensing electrodes are not in contact with the adhesion layer (7).

Abstract: A gas sensor is provided for use in a hazardous explosive atmosphere present continuously or for a long time. The gas sensor is not provided with a pressure-proof housing and is provided with at least one catalytic or semiconductor measuring element (3) in a hollow body (6) defining the measuring element (3) against the environment. The hollow body has breathing openings (4) and wherein the ratio of the area of the breathing openings to the total area of the hollow body equals, furthermore, at most 0.8 or the hollow body is porous with a porous hollow body material having a pore size according to ISO 4003 equal to at most 2 mm.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: A gas sensor on a semiconductor substrate. The gas sensor includes an elongate sensor element extending across an opening and has first and second opposed surfaces exposed for contact with a gas to be sensed. The first surface faces away from a major surface of the substrate. The second surface faces toward said major surface. The electrical conductivity of the elongate sensor element is sensitive to a composition and/or concentration of said gas to which the opposed first and second surfaces are exposable. The gas sensor further includes a support structure arranged to increase the mechanical robustness of the gas sensor by supporting the elongate sensor element in the opening.

Abstract: Humidity or a gas concentration or a solvent concentration in at least one gas is detected by a field effect transistor-based gas sensor whose sensor signal is generated by the change in the work function on a sensitive film. Detection is to be provided in a simple, effective and inexpensive manner. An additional change in potential is impressed at a gate of the field effect transistor and a variable of the resulting change in the sensor signal relative to the additional change in potential is evaluated. For example, each variable, which is e.g. a ratio, can be assigned a relative humidity, a gas concentration, or a solvent concentration. Sensitive films having at least one polymer are particularly advantageous.

Abstract: A self-contained storage system for hazardous materials includes a containment envelope enclosing a storage tank containing hazardous materials and forming a containment space between the storage tank and containment envelope. Leaked material is detected by one or more sensors in the containment space and, depending on the concentration or time rate of change in concentration of the leaked material, alarms and corresponding mitigation measures are reversibly activated to remove leaked material from the containment space.

Abstract: A gas sensitive material comprising SnO2 nanocrystals doped with In2O3 and an oxide of a platinum group metal, and a method of making the same. The platinum group metal is preferably Pd, but also may include Pt, Ru, Ir, and combinations thereof. The SnO2 nanocrystals have a specific surface of 7 or greater, preferably about 20 m2/g, and a mean particle size of between about 10 nm and about 100 nm, preferably about 40 nm. A gas detection device made from the gas sensitive material deposited on a substrate, the gas sensitive material configured as a part of a current measuring circuit in communication with a heat source.

Abstract: A single chip wireless sensor comprises a microcontroller and transmit/receive interface, which is coupled to a antenna by an L-C matching circuit. The sensor senses gas or humidity and temperature. The device is an integrated chip manufactured in a process in which the electronics and sensor components are manufactured using CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material with an polymer component is spun onto the wafer to form a top layer incorporating sensing electrodes. This material is cured at 300° C., lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in its dielectric constant, reducing to 2.9. The thermoset dielectric, not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing.

Abstract: The design and fabrication of ultrathin poly-3-hexyl thiophene (P3HT) film based amine sensors are described herein. Ultrathin P3HT monolayer films can be built on a patterned flexible n-octadecylphosphonic acid (ODPA)/Al2O3/PET substrate, forming a flexible polymer thin film transistor according to a solution process. The mechanism of the sensor is based on the interaction of amine molecules with the surface of the P3HT monolayer. The interaction of amine molecules with the surface of the P3HT monolayer can affect the current density of the PTFT, and the change in current density can indicate the presence of amine molecules in the surroundings. The amine sensors described herein can easily detect amine molecules in a parts per billion (ppb) range. The amine sensors can be utilized, for example, as disposable sensors within food packaging to ensure the safety of the packaged food.

Abstract: A sensor apparatus includes a metal oxide semiconductor sensor and a housing having an internal chamber in which the sensor is disposed. The housing includes at least one window for the ingress of a gas into the internal chamber from an atmosphere exterior to the housing. A gas-selective barrier is disposed across the at least one window.

Abstract: A device including a gas sensor sensitive to the presence of a specific gas is disclosed. In one aspect, the gas sensor includes a first segment made of a dielectric material and a second segment made of a semiconducting material. The first segment has a first surface exposed to an environment of the gas sensor and is located between the environment and the second segment. The first segment has a first thickness and the second segment has a second thickness. The first thickness is selected such that upon diffusion of a gas molecule of the specific gas into the first segment, a dipole of the molecule of the specific gas detectably influences a bending of an energy-band structure of the semiconducting material of the second segment. The second thickness is in the order of, or smaller than, the Debye length of the semiconducting material.