Abstract: A gas sensor has shock resistance and temperature resistance attributes. The gas sensor includes at least one catalytic measuring element (3), which is arranged in a sensor housing (1) forming a combustion chamber (2). The sensor housing (1) has at least one gas-permeable housing opening (4) for the gas exchange between the environment and the combustion chamber (2). The catalytic measuring element (3) is arranged between at least two disk-shaped support elements (5) made of a heat-insulating and temperature-resistant material.

Abstract: Disclosed is a method of fabricating a carbon monoxide detector and a carbon monoxide detector fabricated using the same. Particularly disclosed is a method of fabricating a carbon monoxide detector, which can operate at room temperature and process high detecting selection, and the detector fabricated using the same. The method comprises: providing a substrate having an upper surface; forming two electrode sets on the upper surface of the substrate, and the two electrode sets combined to provide an interdigitated array electrode; forming a tin dioxide layer, which covers the portion of the two electrode sets and the portion of the upper surface; and forming an organic polymer layer on the surface of the tin dioxide layer.

Abstract: A micro gas sensor is disclosed including a substrate; an open cavity formed in the substrate; an electrode pad separation groove formed on the substrate; a first and a second electrode pads formed over the substrate and electrically insulated from each other by the electrode pad separation groove; a micro heater connected to the first electrode pad and configured of a bridge structure suspended over the open cavity; a first sensing electrode extending from the first electrode pad and suspended over the open cavity; a second sensing electrode extending from the first electrode pad and suspended over the open cavity; and a gas sensing film electrically coupled to the micro heater and filling a gap between the first and the second sensing electrodes.

Abstract: A gas-sensing semiconductor device 1? is fabricated on a silicon substrate 2? having a thin silicon dioxide insulating layer 3? in which a resistive heater 6 made of doped single crystal silicon formed simultaneously with source and drain regions of CMOS circuitry is embedded. The device 1? includes a sensing area provided with a gas-sensitive layer 9? separated from the heater 6? by an insulating layer 4?. As one of the final fabrication steps, the substrate 2? is back-etched so as to form a thin membrane in the sensing area. The heater 6? has a generally circular-shaped structure surrounding a heat spreading plate 16?, and consists of two sets 20?, 21? of meandering resistors having arcuate portions nested within one another and interconnected in labyrinthine form.

Abstract: A gas sensor is disclosed. The gas sensor includes a gas sensing layer including doped oxygen deficient tungsten oxide and a dopant selected from the group consisting of Re, Ni, Cr, V, W, and a combination thereof, at least one electrode positioned within a layer of titanium, and a response modification layer. The at least one electrode is in communication with the gas sensing layer and the gas sensing layer is capable of detecting at least one gas selected from the group consisting of NO, NO2, SOx O2, H2O, and NH3. A method of fabricating the gas sensor is also disclosed.

Abstract: Devices and methods for fast, sensitive hydrogen gas detection using a single palladium nanowire. In one embodiment, a hydrogen sensor comprises a palladium nanowire extending between metal contacts. The palladium nanowire is not subject to fracturing when exposed to hydrogen. The nanowire is able to rapidly and reversibly detect hydrogen as a resistance increase down to 2 ppm with excellent reproducibility and baseline stability at room temperature.

Abstract: Embodiments of the subject invention relate to a gas sensor and method for sensing one or more gases. An embodiment incorporates an array of sensing electrodes maintained at similar or different temperatures, such that the sensitivity and species selectivity of the device can be fine tuned between different pairs of sensing electrodes. A specific embodiment pertains to a gas sensor array for monitoring combustion exhausts and/or chemical reaction byproducts. An embodiment of the subject device related to this invention operates at high temperatures and can withstand harsh chemical environments. Embodiments of the device are made on a single substrate. The devices can also be made on individual substrates and monitored individually as if they were part of an array on a single substrate. The device can incorporate sensing electrodes in the same environment, which allows the electrodes to be coplanar and, thus, keep manufacturing costs low.

Abstract: A surface acoustic wave sensor for detecting a target substance by measuring the change in frequency due to the mass applied to a reaction membrane placed on a surface acoustic wave element having high sensitivity due to the improvement of the surface acoustic wave element structure. The surface acoustic wave sensor includes an SH-type surface acoustic wave and a rotated Y-cut LiTaO3 substrate having Euler angles (0°, 120° to 140°, 0°±5°); electrodes principally containing Au, for exciting a surface acoustic wave, the electrodes being arranged on the LiTaO3 substrate; and a reaction membrane bound to a target substance or a binding substance bound to the target substance covering the electrodes arranged on the LiTaO3 substrate. The interdigital transducers have a normalized thickness of about 3.0% to about 5.0%, the normalized thickness being determined by normalizing the thickness of the interdigital transducers by the wavelength of the surface acoustic wave.

Abstract: A reference leak (10) includes a first substrate (20), a second substrate (40) disposed and bonded on the first substrate, and predetermined numbers of leak channels (14) defined in at least one of the first and second substrates. Oblique walls of the leak channels are formed by crystal planes of the at least one of the first and second substrates, the oblique walls thereby being aligned according to such crystal planes. A method for making a reference leak is also provided.

Abstract: A nanocrystalline ITO thin film formed on a quartz crystal microbalance (QCM) facilitates detection of gaseous compounds emitted from an analyte. Adsorption of gas molecules onto the nanocrystalline ITO thin film changes the resonant frequency of the quartz crystal. Parameters such as the frequency of oscillation, surface resistance, integrated frequency response, integrated surface resistance response, initial response slope, average return to baseline slope, and/or return to baseline time/initial response time ratio of the quartz crystal with the nanocrystalline ITO thin film formed thereon are determined. Using the determined parameters and principal component analysis, principal components for the gaseous compounds are also determined. These determined principal components may be compared with known principal components corresponding to known analytes.

Abstract: A sensor system for detection of gas with a modified ion selection FET. The FET may have a gate of low conductivity material for detection of a species in a fluid. A component such as a capacitor may be connected to an electrode of the FET, such as a source, in conjunction with the FET to reduce noise of the detection signal of the species. One or more current sources may provide a current through the FET, and through a resistor to provide a constant source-to-drain voltage. The system may have a bulk voltage selection of either that of a voltage approximately equal to the FET source voltage or greater than the FET source voltage. Also, a guard ring may be implemented in the FET for preventing leakage currents relative to the source or drain.

Abstract: A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured barium cerate with platinum catalyst nanoparticles. Initial exposure to a UV light source, at room temperature, causes burning of organic residues present on the sensor surface and provides a clean surface for sensing hydrogen at room temperature. A giant room temperature hydrogen sensitivity is observed after making the UV source off. The hydrogen sensor of the invention can be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently used at room temperature.

Abstract: A gas sensor, which is extremely compact to be arranged for separated gas piping in semiconductor device manufacturing equipment, a gas measuring system using such gas sensor, and a gas detection module for the gas measuring system. The gas sensor has a gas detection device containing a dielectric semiconductor, the electric conductivity of the gas detection device varying in response to the degree of adsorption of gases to the gas detection device, a capacitive element connected in series to the gas detection device, and a pair of electrodes which are connected to electric terminals of an electric element comprising the gas detection device and the capacitive element, wherein the gas sensor is capable of detecting the degree of adsorption of gases to the gas detection device from an electrical response to a voltage which is applied to the electrodes and which periodically varies and reverses in polarity.

Abstract: A gas sensor is provided for use in a hazardous explosive atmosphere present continuously or for a long time. The gas sensor is not provided with a pressure-proof housing and is provided with at least one catalytic or semiconductor measuring element (3) in a hollow body (6) defining the measuring element (3) against the environment. The hollow body has breathing openings (4) and wherein the ratio of the area of the breathing openings to the total area of the hollow body equals, furthermore, at most 0.8 or the hollow body is porous with a porous hollow body material having a pore size according to ISO 4003 equal to at most 2 mm.

Abstract: A hydrogen sensor and/or switch fabricated from an array of nanowires or a nanoparticle thick film composed of metal or metal alloys. The sensor and/or switch demonstrates a wide operating temperature range and shortened response time due to fabrication materials and methods. The nanowires or nanoparticle thick films demonstrate an increase in conductivity in the presence of hydrogen.

Abstract: A method and instrument capable of accurately detecting the presence of a gas and accurately measuring the concentration of the gas in, for example, the environment. The method and instrument sense the presence of a gas with a sensing element whose output is linear to the concentration of the gas in the environment, and process the output of the sensing element through a nonlinear amplifier having a higher gain at lower levels of the output than at higher levels of the output so that the nonlinear amplifier amplifies the output of the sensing element at the lower levels thereof and avoids signal saturation at the higher levels thereof. The method and instrument then deliver the amplified output of the nonlinear amplifier to an audio circuit that produces an audio output having a property in proportion to the amplified output of the nonlinear amplifier.

Abstract: Detecting air ingredients is obtained, a heater and gas sensitive acting layers are arranged on a substrate, which are connectable to an analyzing unit. Electrical resistances of n acting layers are connected in series; heater is a temperature sensor connected in parallel with this series connection, electrical resistance of heater is smaller than the sum of electrical resistances of acting layers and resistances are connected with a total of n+1 electrical terminals via electrodes so that heater is connected with two terminals and n?1 other terminals are connected with a respective junction that interconnects two acting layers. Heater is intermittently heated so that a predefined constant temperature of acting layers is achieved, temperature of acting layers is acquired by determining electrical resistance of heater; voltages in the series connection of acting layers are analyzed and a concentration of gases are determined from electrical resistances of acting layers.

Abstract: An operating method is disclosed for the selective detection of a target gas in a gas mixture to be measured by a field effect transistor with a gas-sensitive layer disposed on a carrier substrate, wherein the gas mixture to be measured is prepared by an electrochemical element such that the measured gas mixture includes minimal amounts of interfering gases that interfere with the measurement of the target gas, and/or at least one target gas is activated such that it is detected by the gas-sensitive layer.

Abstract: A hydrogen sensor (100) is provided with a substrate (2), a detection film (4) formed on the substrate (2), and a hydrogen permeable protective film (10) formed on the detection film (4). The detection film (4) is composed of a first ceramic (6) and rare-earth metal particles (8) dispersed in the first ceramic (6). The protective film (10) is composed of a second ceramic (12) and hydrogen permeable metal particles (14) dispersed in the second ceramic (12). Preferably, the thickness of the detection film (4) is 5 to 1,000 nm, and the thickness of the hydrogen permeable protective film (10) is 5 to 40 nm.

Abstract: A method can be adapted for design and preparation of a matrix nanocomposite sensing film for hydrogen sulphide SAW/BAW detection at room temperature. A matrix nanocomposite can be synthesized by incorporating both single-wall and multi-wall thiolated carbon nanotubes into conductive organic polymers or ceramic nanocrystalline in a properly functionalized manner. A thin organic sensing film can be prepared based on the matrix nanocomposite. The matrix nanocomposite sensing film can be prepared on a surface of a SAW/BAW device by an additive process or a direct printing process. Finally, the sensing film can be consolidated by thermal annealing or laser annealing under ambient conditions in order to obtain the stable sensing film with higher sensitivity and electrical properties for a SAW/BAW based H2S sensor.

Abstract: A hydrogen gas visualization device comprises a hydrogen sensor having a thin film layer formed on the surface of a substrate and a catalyst layer formed on the surface of the thin film layer which, when contacted by hydrogen gas contained in an atmosphere, hydrogenates the thin film layer and thereby changes the optical reflectance of the thin film layer, and one or more sensor faces provided with the hydrogen sensor. The hydrogen gas visualization device visualizes, on the sensor faces, the distribution of hydrogen gas contained in the atmosphere contacting the hydrogen sensor and thereby visualizes the existence and flow of the hydrogen gas.

Abstract: The present invention provides a sensing device for obtaining information of a test sample using an electromagnetic wave including a frequency region within a frequency region of 30 GHz to 30 THz, the sensing device comprising an electromagnetic wave transmitting portion including a plurality of transmission portions (4a, 4b) for propagating electromagnetic waves and detection portions (3a, 3c) for receiving and detecting the electromagnetic waves from the plurality of transmission portions (4a, 4b), in which at least one of the plurality of transmission portions (4a, 4b) is constructed such that the test sample (5, 6) can be placed in a portion affected by an electromagnetic wave propagating therethrough.

Abstract: The present invention discloses a gas sensor made of field effect transistor based on ZnO nanowires (ZnO-FET) which operates according to the principle of metal-oxide-semiconductor field effect transistor (MOSFET) and has a charge carrier channel made of ZnO nanowires between source and drain. The gas sensor device disclosed in the present invention has three electrodes-gate, source and drain, so that it is different from the known gas sensor device which has only two electrodes-cathode and anode. The ZnO nanowires as charge channel in the gas sensor device of the present invention is an n-type semiconductor with high specific surface area, and its electric resistance can be controlled by the gate bias, so that the capability of the present device for sensing gas can be largely promoted.

Abstract: A multi-sensor gas detector includes a solid state heatable gas sensor, and at least one, different, infrared gas sensor. Emitted radiant energy from a heated surface of the solid state gas sensor, incident on the infrared gas sensor generates an output signal indicative thereof. The output signal and a signal from the solid state gas sensor can be coupled to evaluation circuits. The evaluation circuits can be implemented with a programmable processor and associated, executable control software to establish the presence of a target gas. One or more gas detectors can be incorporated into a regional monitoring system that includes a control unit coupled to a plurality of fire, smoke or gas detectors.

Abstract: A sensor device. One embodiment provides a first sensor having a first sensor surface. The first sensor surface is exposed to allow sensing of a first variable. A second sensor has a second sensor surface. The second sensor surface is sealed to inhibit sensing of the first variable, and a mold material is embedded the first and second sensors.

Abstract: The invention relates to a system for measuring the saturation level of a filter comprising a parallel filter; a divider for dividing said gas flow into at least a main flow and a sub flow, wherein said main flow is fed into said main filter and said sub flow is fed into said parallel filter, wherein the volume ratio between said main flow and said sub flow is substantially equal to the filter capacity ratio and/or filter volume ratio between said main filter and said parallel filter, and a detector operatively associated with the flow coming from the main filter and/or from the discharge side of said parallel filter, for measuring the concentration of the component in said flows and detecting a difference in said concentrations. The detector is arranged for detecting the concentration of the component at a temperature higher than 100° C.

Abstract: A method for fabricating an ultra-sensitive metal oxide gas sensor is disclosed, which comprises the steps of spinning a mixture solution including a metal oxide precursor and a polymer onto a sensor electrode to form a metal oxide precursor-polymer composite fiber; thermally compressing or thermally pressurizing the composite fiber; and thermally treating the thermally compressed or thermally pressurized composite fiber to remove the polymer from the composite fiber. Since the gas sensor includes a macro pore between nanofibers and a meso pore between nano-rods and/or nano-grains, gas diffusion and surface area can be maximized. Also, the ultra-sensitive sensor having high stability in view of mechanical, thermal, and electrical aspects can be obtained through rapid increase of adhesion between the metal oxide thin layer and the sensor electrode.

Abstract: The invention relates to a circuit assembly for operating a sensor array, in particular, a gas sensor array for detecting gases, which comprises at least one signal line. According to said invention, a signal line is divided into two parallel line branches with a sensor and a diode, preferably a Schottky diode, arranged in each of said two parallel line branches, whereby the two diodes have opposite electrical polarity. The use of different polarity diodes permits actuation of both sensors through only one signal line. It can be determined if the current flows through one or the other of both sensors by merely polarizing the electrical potential applied to the signal line appropriately.

Abstract: A gas sensor is disclosed, which includes two separate metal electrodes on a surface of a substrate and a semiconductor thin film deposited on the surface of the substrate and connecting the two metal electrodes. The semiconductor thin film contains zinc oxide or a mixed oxide of zinc and indium, and the zinc oxide or the mixed oxide of zinc and indium are in the form of nanowires which constitute a gas-sensing surface of the semiconductor thin film. The nanowires have a diameter of 50-900 nm. The present invention also discloses a method for detecting the presence of a NOx gas.

Abstract: A sensor is provided which is configured to detect the presence of multiple analytes, for example chemical or biological compounds, through the measurement of induced resonance shifts in a coupled array of microelectromechanical or micromechanical resonators.

Abstract: A method includes forming a hole in a first wafer and forming a sensor structure in or on a second wafer. The second wafer includes a piezoelectric material. The method also includes bonding the first wafer and the second wafer, where the sensor structure is located between the wafers. The method further includes forming a sensing layer by depositing material between the wafers through the hole in the first wafer. The sensing layer could be formed by depositing a sensing layer material on the second wafer using direct printing. Also, the hole through the first wafer could be formed using ultrasonic milling, micro-drilling, laser drilling, wet etching, and/or plasma etching. A spacer material could be used to bond the wafers together, such as frit glass paste or an organic adhesive. Trenches could be formed in the first wafer to facilitate easier separation of multiple sensors.

Abstract: A nanostructure sensing device includes a substrate, a nanotube disposed over the substrate, and at least two conductive elements electrically connected to the nanotube. A electric current on the order of about 10 ?A, or greater, is passed through the conductive elements and the nanotube. As a result, the nanotube heats up relative to the substrate. In the alternative, some other method may be used to heat the nanotube. When operated as a sensor with a heated nanotube, the sensor's response and/or recovery time may be markedly improved.

Abstract: A device for detecting a gas or gas mixture having at least one first gas sensor designed as an SGFET and at least—one second, additional gas sensor designed as a Lundström-FET. The gas sensors are connected to a processing device designed to analyze the measurement signals from both types of gas sensors in order to detect the gas or gas mixture.

Abstract: Provided is a micro gas sensor including: a substrate; an open cavity and electrode pad separation grooves formed on the substrate; a plurality of electrode pads formed on an upper portion of the substrate and electrically insulated from each other by the electrode pad separation grooves; a micro heater connected to a plurality of the electrode pads by a bridge structure and suspended on the open cavity; a plurality of sensing electrodes formed on the same plane between the micro heater and a plurality of the electrode pads in a cantilever array and suspended on the open cavity; and a gas sensing film formed to be hung down between microelectrode finger spacings of a plurality of the sensing electrodes to represent changes in characteristics according to a gas concentration by contacting surfaces of the micro heater and a plurality of the sensing electrodes.

Abstract: Gallium oxide films for sensing gas comprise Ga2O3 and have a porosity of at least about 30%. Such films can be formed by coating a substrate with a solution comprising: a gallium salt and a porogen comprising an organic compound comprising a hydrophilic chain and a hydrophobic chain; and heating the substrate to a temperature in the range from about 400° C. to about 600° C. while exposing the substrate to an oxygen-containing source to convert the gallium salt to a gallium oxide.

Abstract: An apparatus for separating an analyte from a mixture or for detecting an analyte or for determining the affinity, or a property related to affinity, between binding partners includes: a) a surface having the analyte or one of the binding partners immobilized thereon, in use; b) a transducer for oscillating the surface; c) a controller connected to the transducer for varying the amplitude and/or frequency of the oscillation to cause a dissociation event; and, d) an analyzer connected to the transducer for detecting an oscillation of the transducer due to the dissociation event. The controller includes an oscillator connected in a resonant circuit with the transducer such that the transducer oscillates at two frequencies simultaneously, one of these causing the transducer to oscillate the surface and the other being supplied as an output to the analyzer.

Abstract: A single chip wireless sensor (1) comprises a microcontroller (2) connected to a transmit/receive interface (3), which is coupled to a wireless antenna (4) by an L-C matching circuit. The sensor (1) senses gas or humidity and temperature. The device (1) is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material (57) with an organic polymer component is spun onto the wafer to form a top layer incorporating also sensing electrodes (60). This material is cured at 300° C., which is much lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in K, its dielectric constant, reducing to 2.9. The thermoset dielectric, while not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing.

Abstract: A hydrogen sensor and/or switch fabricated from an array of nanowires or a nanoparticle thick film composed of metal or metal alloys. The sensor and/or switch demonstrates a wide operating temperature range and shortened response time due to fabrication materials and methods. The nanowires or nanoparticle thick films demonstrate an increase in conductivity in the presence of hydrogen.

Abstract: Sensor platforms and methods of making them are described. A platform having a non-horizontally oriented sensor element comprising one or more nanostructures such as nanotubes is described. Under certain embodiments, a sensor element has or is made to have an affinity for an analyte. Under certain embodiments, such a sensor element comprises one or more pristine nanotubes. Under certain embodiments, the sensor element comprises derivatized or functionalized nanotubes. Under certain embodiments, a sensor is made by providing a support structure; providing one or more nanotubes on the structure to provide material for a sensor element; and providing circuitry to electrically sense the sensor element's electrical characterization. Under certain embodiments, the sensor element comprises pre-derivatized or pre-functionalized nanotubes. Under other embodiments, sensor material is derivatized or functionalized after provision on the structure or after patterning.

Abstract: A gas-sensing semiconductor device 1? is fabricated on a silicon substrate 2? having a thin silicon dioxide insulating layer 3? in which a resistive heater 6 made of doped single crystal silicon formed simultaneously with source and drain regions of CMOS circuitry is embedded. The device 1? includes a sensing area provided with a gas-sensitive layer 9? separated from the heater 6? by an insulating layer 4?. As one of the final fabrication steps, the substrate 2? is back-etched so as to form a thin membrane in the sensing area. The heater 6? has a generally circular-shaped structure surrounding a heat spreading plate 16?, and consists of two sets 20?, 21? of meandering resistors having arcuate portions nested within one another and interconnected in labyrinthine form.

Abstract: The application relates to a chemical sensor device comprising a substrate (1), a sensor medium (3) formed on the substrate, the sensor medium comprising one-dimensional nanoparticles, wherein the one-dimensional nanoparticles essentially consist of a semiconducting AxBy compound, e.g. V2O5 and detection means (2) for detecting a change of a physical property of the sensor medium e.g. conductivity. The porosity of the sensor medium supports a fast access of the analyte to the sensing material and therefore a fast response of the sensor. The selectivity and sensitivity of the sensor can be tailored by doping the one-dimensional nanoscale material with different dopants or by varying the dopant concentration. Sensitivity of the sensor device to an analyte, preferably an amine, can be increased by increasing relative humidity of the sample to at least 5%.

Abstract: A miniaturized Schottky diode hydrogen and hydrocarbon sensor and the method of making same is disclosed and claimed. The sensor comprises a catalytic metal layer, such as palladium, a silicon carbide substrate layer and a thin barrier layer in between the catalytic and substrate layers made of palladium oxide (PdOx). This highly stable device provides sensitive gas detection at temperatures ranging from at least 450 to 600° C. The barrier layer prevents reactions between the catalytic metal layer and the substrate layer. Conventional semiconductor fabrication techniques are used to fabricate the small-sized sensors. The use of a thicker palladium oxide barrier layer for other semiconductor structures such as a capacitor and transistor structures is also disclosed.

Abstract: A sensor system for detection of gas with a modified ion selection FET. The FET may have a gate of low conductivity material for detection of a species in a fluid. A component such as a capacitor may be connected to an electrode of the FET, such as a source, in conjunction with the FET to reduce noise of the detection signal of the species. One or more current sources may provide a current through the FET, and through a resistor to provide a constant source-to-drain voltage. The system may have a bulk voltage selection of either that of a voltage approximately equal to the FET source voltage or greater than the FET source voltage. Also, a guard ring may be implemented in the FET for preventing leakage currents relative to the source or drain.

Abstract: The invention provides a novel method for the fabrication of nanomaterials, especially nanostructures arranged on a substrate with nanoparticles deposited thereon. The methods of the present invention can be used to fabricate a novel ambient-temperature gas sensor that is capable of detecting a variety of specific gasses over a range of concentrations.

Abstract: A sensor device is provided for determining the presence and/or amount of at least one component in a fluid. The sensor device comprises at least one sensor unit, the at least one sensor unit comprising at least one elongated nanostructure and a dielectric material surrounding the at least one elongated nanostructure. The dielectric material is such that it is selectively permeable for one of the at least one component and is capable of sensing the component permeated through the dielectric material. The sensor device according to preferred embodiments shows good sensitivity and good mechanical strength. The present invention furthermore provides a method for manufacturing such a sensor device and a method for determining the presence and/or amount of at least one component in a fluid using such a sensor device.

Abstract: The application relates to a chemical sensor device comprising a substrate (1), a sensor medium (3) formed on the substrate, the sensor medium comprising one-dimensional nanoparticles, wherein the one-dimensional nanoparticles essentially consist of a semiconducting AxBy compound, e.g. V2O5 and detection means (2) for detecting a change of a physical property of the sensor medium e.g. conductivity. The porosity of the sensor medium supports a fast access of the analyte to the sensing material and therefore a fast response of the sensor. The selectivity and sensitivity of the sensor can be tailored by doping the one-dimensional nanoscale material with different dopants or by varying the dopant concentration. Sensitivity of the sensor device to an analyte, preferably an amine, can be increased by increasing relative humidity of the sample to at least 5%.

Abstract: A gas sensor has at least one gas sensitive layer, which has at least one surface area in which the work function is dependent upon the concentration of a target gas capable of being brought into contact with the surface zone. At least one electric potential sensor is capacitatively coupled to the surface zone over an air gap. The surface zone of the gas sensitive layer is covered with an electrically insulating coating which is inert to the target gas and which is adhesively bound to the gas sensitive layer. The coating is configured so that it is permeable to the target gas and so that when the target gas contacts the surface zone of the gas sensitive layer, it prevents or at least impedes an alteration of the bound state of atoms and/or molecules bound to the surface zone and differing from the target gas.

Abstract: A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

Abstract: A gas sensor has a dielectric base having a face, a heater element on the face, electrodes connected to the heater element, and a gas sensor element on the heater element that when heated changes impedance when in contact with a predetermined gas. The element is in electrical contact with the heater element. A power supply connected to the heater element electrodes energizes same and heats the gas sensor to its operating temperature. A sensor electrode is also in contact with the sensor element so that the impedance of the sensor element can be measured between the sensor electrode and one of the heater element electrodes.

Abstract: The gas sensor device of the semiconductor film type comprises, on a single face of it, at least one gas sensor, a resistive heating film and pads for electrical contact of the sensors and of the resistive heating film; the heating element, the gas sensor film and the contact pads are made entirely by sputter deposition.