Abstract: A covered acceleration sensor element includes a support frame portion surrounding a weight portion, a plurality of flexible beam portions for connecting the weight portion to the support frame portion, and piezoresistance elements provided on the beam portions. An upper cover and a lower cover enclosing the periphery of the weight portion together with the support frame portion are joined to the face and back of the support frame portion. The support frame portion is separated by separation grooves into an inner frame and an outer frame. The plurality of inner frame support portions has flexibility. The beam portions are connected to both sides of the weight portion along the second axis and the third axis. The inner frame support portions are connected to both sides of the inner frame in a direction in which they are rotated nearly 45 degrees from the second axis and the third axis.

Abstract: Disclosed herein are an acceleration measuring apparatus and an acceleration measuring method. The acceleration measuring apparatus includes: an acceleration sensor including a first output terminal and a second output terminal; a first switch of which an end is connected to the first output terminal; a second switch of which an end is connected to the second output terminal; a first resistor of which an end is connected to the other end of the first switch; a second resistor of which an end is connected to the other end of the second switch; a logic element connected to the end of the first resistor and the end of the second resistor; and a Time-to-Digital Convertor (TDC) converting a signal output from the logic element into a digital value.

Abstract: The MEMS sensor according to the present invention includes: a substrate; a supporting portion provided on one surface of the substrate; a beam, supported by the supporting portion, having a movable portion opposed to the surface of the substrate through a space; a resistor formed on at least the movable portion of the beam; a weight arranged on a side of the beam opposite to the substrate; and a coupling portion, made of a metallic material, coupling the beam and the weight with each other.

Abstract: The invention provides a sensor comprising a frame, a plurality of beams extending inwardly from said frame, a weight portion supported by the beams, a piezoelectric-resistor formed on each beam and an insulating layer that covers the piezoelectric-resistor. The piezoelectric-resistor has at least one bend, and a metal wiring is located on the insulting layer positioned at the bend. The metal wiring is connected to the bend via at least two contact holes formed in the insulating layer. Contact holes are formed in the insulating layer positioned at both ends of the piezoelectric-resistor, and a bridge circuit wiring is connected to the piezoelectric-resistor via the contact holes.

Abstract: A piezoresistive transducer is disclosed having a framework including a support element attached to a bending element that undergoes a deformation relative to the support element when a force acts on the bending element including a neutral fiber whose length does not change during the deformation. At least one piezoresistive expansion body is attached to the support element that exhibits a piezoresistive material and converts the deformation of the bending element into an electrically detectable change in resistance.

Abstract: In a sensing unit according to the present invention, a spring portion having a support portion and a movable portion is conductive. A signal of a sensor portion provided on the movable portion of the spring portion is transmitted via the spring portion. Hence, the sensing unit according to the present invention has a simple constitution with a small number of components, and a wire does not necessarily have to be provided for each sensor portion. As a result, a reduction in manufacturing cost, simplification of the manufacturing process, and so on are achieved.

Abstract: An acceleration sensor includes a frame, a weight portion, an arm portion for connecting the frame and the weight portion, and a sensing portion for detecting a bend of the arm portion. The sensing portion includes a first electrode portion, a second electrode portion, and a strain resistor portion. The first electrode portion and the second electrode portion are provided on the weight portion. A first end of the strain resistor portion is connected to the first electrode portion, and a second end of the strain resistor portion is connected to the second electrode portion. The strain resistor portion is formed of a strain resistor film comprising a metal oxide. The strain resistor portion is formed in meander shape in the part which is nearer to the weight portion than the frame in the arm portion.

Abstract: The acceleration sensor according to the present invention includes a sensor chip having a movable portion operating in response to a change in a physical quantity and a silicon chip arranged to be opposed to a first side of the sensor chip and bonded to the sensor chip, while the sensor chip is provided with a penetrating portion penetrating the sensor chip in the thickness direction so that the first side is visually recognizable from a second side of the sensor chip, and the silicon chip is provided with an alignment mark on a portion opposed to the penetrating portion.

Abstract: In a sensing unit according to the present invention, a spring portion having a support portion and a movable portion is conductive. A signal of a sensor portion provided on the movable portion of the spring portion is transmitted via the spring portion. Hence, the sensing unit according to the present invention has a simple constitution with a small number of components, and a wire does not necessarily have to be provided for each sensor portion. As a result, a reduction in manufacturing cost, simplification of the manufacturing process, and so on are achieved.

Abstract: Disclosed herein is an inertial sensor. There is provided an inertial sensor 100, including: a plate-like substrate layer 110, a mass body 130, a post 140, a support part 150 extending in the central direction of the mass body 130 from the post 140, and a detection unit 170 detecting the displacement of the displacement part 113. The inertial sensor adopts the support part 150 limiting the downward displacement of the mass body 130 to prevent the support portion of the mass body 130 from being damaged.

Abstract: A new high G-range damped acceleration sensor is proposed with a proof mass optimized for maximized, bi-directional and symmetrical damping to accommodate acceleration ranges above and beyond several thousand G's. In order to achieve the maximum, bi-directional and symmetrical damping, the high G-range acceleration sensor is designed to have minimum amount of mass in the proof mass while maximizing its surface areas. Such high G-range damped acceleration sensor can be applied to any application in which damping (or suppression of ringing) is desired at quite high frequencies.

Abstract: A high-g shock accelerometer is provided with an LCC case. A MEMs acceleration sensor is positioned in an interior of the LCC case. The MEMs acceleration sensor has exterior surfaces including top and bottom surfaces and side surfaces. An elastomer is in an adjacent relationship or in contact to a majority of the exterior surfaces and to the interior of the LCC case. The MEMs acceleration sensor with the elastomer attenuates LCC case strain sensitivity while retaining wide band frequency response.

Abstract: In various embodiments, a microelectromechanical system may include a mass element; a substrate; a signal generator; and a fixing structure configured to fix the mass element to the substrate; wherein the mass element is fixed in such a way that, upon an acceleration of the microelectromechanical system, the mass element can be moved relative to the substrate in at least two spatial directions, and wherein a signal is generated by the movement of the mass element by means of the signal generator.

Abstract: An acceleration sensor having a high impact resistance to prevent breakage under excessive acceleration, but can stably exert a sensing performance. The acceleration sensor is formed of an SOI substrate of a three-layered structure including a silicon layer (active layer silicon), a silicon oxide layer, and a silicon layer (substrate silicon). The acceleration sensor includes frame parts, a plurality of beam parts, the beam parts projecting inward from the frame part, and a weight part supported by the beam parts. A strain sensing part is provided on each of the beam parts. A width W of each of the beam parts, a length I of each of the beam parts, and an inner frame length L of the frame part satisfy the following relationships of Expressions (1) and (2). 2<L/I?2.82??Expression (1) I/W?3.

Abstract: An acceleration sensor having a high impact resistance to prevent breakage under excessive acceleration, but can stably exert a sensing performance. The acceleration sensor is formed of an SOI substrate of a three-layered structure including a silicon layer (active layer silicon), a silicon oxide layer, and a silicon layer (substrate silicon). The acceleration sensor includes frame parts, a plurality of beam parts, the beam parts projecting inward from the frame part, and a weight part supported by the beam parts. A strain sensing part is provided on each of the beam parts. A width W of each of the beam parts, a length I of each of the beam parts, and an inner frame length L of the frame part satisfy the following relationships of Expressions (1) and (2). 2<L/I?2.82??Expression (1) I/W?3.

Abstract: A mechanical-to-electrical sensing structure is provided with first and second movable blocks. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. At least a first gage link is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gage link. Electrochemistry is used to define the at least first gage.

Abstract: An acceleration sensor has a semiconductor acceleration sensor chip and a case. The semiconductor acceleration sensor chip has a fixed portion, a plummet portion surrounding the fixed portion without contacting the fixed portion, and a beam portion connecting the fixed portion and the plummet portion, the thickness of the beam portion being thinner than the thickness of the fixed portion. The case has a cavity housing the semiconductor acceleration sensor chip, and a projection portion formed on the bottom face of the cavity, the bottom face of the fixed portion being fixed to the top face of the projection portion.

Abstract: A force sensor chip of the present invention is for detecting an external force, and comprises a base member including an action portion where the external force is applied, a support portion that supports the action portion therearound, and a connecting portion that connects the action portion and the support portion together, a plurality of strain detecting resistive elements that are formed at respective deformation producing portions of the base member which deform when the external force is applied, and a thin-film resistor that is formed at upper layers of the strain detecting resistive elements with a resistive-element wiring and an interlayer insulation film intervening between the thin-film resistor and the strain detecting resistive elements.

Abstract: There is provided an electronic part that has a substrate, an insulating layer formed on the substrate and a pad formed on the insulating layer and is electrically connected with an external terminal and that further includes a cavity formed at least at either one of the substrate corresponding to a bottom surface of the electrode pad and a region of the insulating layer. It provides a highly reliable electronic part, its fabrication method as well as an acceleration sensor using the electronic part and its fabrication method.

Abstract: A semiconductor acceleration sensor includes an acceleration sensor chip that includes a weight portion, a base portion provided around the weight portion with a gap therebetween, and beam portions flexibly connecting the weight portion and the base portion; and a stopper plate that is provided above the acceleration sensor chip. The stopper plate includes: a plurality of fixing portions that are protrudingly provided at positions opposite to the base portion and are fixed to the base portion; first concave portions that are formed around the fixing portions at positions opposite to the weight portion and define the displacement of the weight portion; and a second concave portion that is formed at a position opposite to the beam portions and is deeper than the first concave portion.

Abstract: A MEMS or NEMS device for detecting a force following a given direction, comprising a support (4) and at least one seismic mass (2) capable of moving under the effect of the force to be measured in the direction of said force, and means (10) for detecting the movement of said seismic mass (2), said seismic mass being articulated relative to the support by at least one pivot link, and means capable of varying the distance between the axis (Z) of the pivot link and the center of gravity (G) of the exertion of the force on said seismic mass.

Abstract: The sensor device includes a dead-weight portion, a frame portion disposed so as to surround the dead-weight portion, a supporting portion provided at the frame portion via a first insulating layer, a mass portion provided at the dead-weight portion via a second insulating layer, a beam portion connecting the supporting and mass portions, a first concave portion, and a second concave portion, wherein a depth of the first or second concave portion is from 3.3% or more to 5.0% or less of the width of the frame portion.

Abstract: A pivoted acceleration sensor has a substrate that is substantially parallel to first and second surfaces. A reference frame is provided. A first unbalanced seismic mass is suspended within the reference frame and is coupled with the reference frame through first and second strain gauges. The first and second strain gauges are located along a pivot axis of the first unbalanced seismic mass. The first and second strain gauges are first and second piezoresistors on the first surface of the substrate, A second unbalanced seismic mass is flexibly coupled with the first unbalanced seismic mass. The second unbalanced seismic mass is suspended within the reference frame and is coupled with the reference frame through third and fourth strain gauges. The third and fourth strain gauges are located along a pivot axis of the second unbalanced seismic mass. The third and fourth strain gauges are third and fourth piezoresistors on the first surface of the substrate.

Abstract: A motion-sensing device for sensing tilt and acceleration when either tilt, horizontal acceleration, or tilt and horizontal acceleration acting concurrently, influence the device, including: a substrate, a first tilt sensor fixed to the top of the substrate; a pendulum flexibly coupled to the bottom of the substrate proximate to the first tilt sensor; and a second tilt sensor fixed to the pendulum. The first and/or second tilt sensors are preferably an accelerometer; a spring-mass system; and/or an arcuate resistive element. The first tilt sensor includes a tilt sensor that measures tilt in a first geometric plane, the pendulum is constrained to move in the first geometric plane, and the second tilt sensor is operable to measure tilt in the first geometric plane. The motion-sensing device or devices coupled to a machine, vehicle, and/or a control system. The substrate may include a portion of the first tilt sensor.

Abstract: An apparatus is provided and includes compressed conductive elements that each have independently adjustable dimensions sufficient to provide substantially enhanced piezoresistance to a current flowing across each conductive element with each of the conductive elements subjected to compressive strain, the conductive elements being oscillated in a direction parallel to that of the compressive strain at a defined frequency such that a resistance of the conductive elements to the current is thereby substantially reduced.

Abstract: An acceleration sensor chip package includes an acceleration sensor chip; a sensor control chip; a re-wiring layer; an outer terminal; a sealing portion; and a substrate. The acceleration sensor chip includes a frame portion; a movable structure; a detection element; and an electrode pad electrically. The re-wiring layer has a wiring portion connected to the electrode pad. The electrode pad is electrically connected to a conductive bump. The sensor control chip has a sensor control electrode pad electrically connected to the conductive bump. The outer terminal is connected to the wiring portion and disposed in the outer region. The sealing portion seals the sensor control chip, the electrode pad, and the re-wiring layer, so that the movable structure is movable. The substrate is attached to the acceleration sensor chip to seal an opening portion.

Abstract: An inertial sensor includes a stopper having a first locking member extending from a flame onto a proof-mass, a first recess formed at the proof-mass, including a bottom surface, a second locking member extending from the proof-mass onto the edge of the flame, a second recess formed at the edge of the side member of the flame and a projection member projecting from the flame toward the proof-mass, wherein each of the first locking member and the projection member is disposed on the both sides of the second recess.

Abstract: An integrated interferometric gyroscope and accelerometer device. An example device includes a cantilever beam, a package having a post connected to one end of the beam, a piezoresistor driver, a piezoresistor sensor, and a semiconductor interferometric optical gyro. The piezoresistor driver is incorporated within the beam at a first area proximate to the post. The driver electro-thermally resonates the beam. The piezoresistor sensor is incorporated within the beam at the first area. The sensor piezoresitively senses a signal that relates to an acceleration force out-of-plane of the beam. The semiconductor interferometric optical gyro is also incorporated within the beam at a second area of the beam. The gyro senses rotational motion about an axis approximately equivalent to the acceleration force out-of-plane of the beam. The gyro includes a waveguide, a laser source and a light detector. The beam is formed from a semiconductor substrate.

Abstract: Static and dynamic acceleration as well as static and dynamic angular velocity are detected with a simple structure. An acceleration detecting section includes a weight body, a pedestal around the weight body, flexible plate-like bridge portions, and piezoresistive elements embedded in the upper surface of the bridge portions. An angular velocity detecting section includes a weight body, a pedestal around the weight body, flexible plate-like bridge portions, and piezoelectric elements fixed to the upper surface of the bridge portions. The pedestals are fixed to a device chassis. When the weight body is displaced by acceleration, the plate-like bridge portions are deflected, so that the acceleration is detected based on the change in the electrical resistances of the piezoresistive elements.

Abstract: An acceleration sensing device includes a movable sensing member, a frame member and a supporting member. The supporting member is coupled between the movable sensing member and the frame member so as to support the movable sensing member. The acceleration sensing device further includes a covering member disposed above the movable sensing member, with a gap between the covering member and the movable sensing member. The acceleration sensing device still further includes internal electrodes, interconnection films, external electrodes and a resin film. The internal electrodes are arranged around the covering member. The interconnection films are disposed on the frame member so as to be coupled to the internal electrodes. The external electrodes are disposed on the interconnection films. The resin film is disposed on the frame member so as to seal the covering member.

Abstract: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.

Abstract: A covered acceleration sensor element includes a weight portion, a support frame portion surrounding the weight portion, a plurality of flexible beam portions for connecting the weight portion to the support frame portion to support the weight portion, piezoresistance elements provided on the beam portions, and wirings for connecting them. An upper cover and a lower cover enclosing the periphery of the weight portion together with the support frame portion are joined to the face and back of the support frame portion. Acceleration in the directions of three axes, i.e., a first axis in the joining thickness direction, a second axis in a plane perpendicular to the first axis, and a third axis in the plane and perpendicular to the second axis, or acceleration in the direction of any of the axes, is detected from changes in the resistances of the piezoresistance elements. The support frame portion is separated by separation grooves into an inner frame and an outer frame.

Abstract: The present invention is to provide a semiconductor acceleration sensor capable of sensing accelerations in two directions parallel to the surface of a diaphragm and orthogonal to each other with respective proper sensitivities. A semiconductor acceleration sensor is constituted of diaphragm pieces extending from the center of the diaphragm surface to a wafer outer-circumferential frame section, respectively, along an X axis direction and a Y axis direction orthogonal to each other. On the upper surface of the diaphragm pieces, there are formed piezo resistors Rx1 to Rx4, Ry1 to Ry4, Rz1 to Rz4. In the diaphragm pieces disposed on a single line along the X axis direction and the diaphragm pieces disposed on a single line along the Y axis direction, the areas of cross section orthogonal to the axis are set according to a maximum value of acceleration, respectively, in the X axis direction or Y axis direction.

Abstract: An arrangement that converts mechanical energy into electrical energy employs a base member and a cantilever member coupled thereto. The cantilever member has two piezoelectric layers with an air space therebetween. A proof mass is coupled to the cantilever member distal from the base member. The first and second piezoelectric layers are formed of lead zirconate titanate (PZT), and the output voltage of the cantilever member is proportional to the height of the air gap. A piezoresistive accelerometer that is useful for measuring mechanical vibration has a suspension beam and a piezoresistive layer be separated from the suspension beam. A method of monitoring an acoustic vibration utilizes a piezoresistive element having an air-spaced cantilever formed of a piezoelectric material in the vicinity of the system to be monitored and obtains an alternating voltage form the air-spaced cantilever of the piezoresistive element.

Abstract: Although a weight part of an acceleration sensor chip fixed on a die pad is coated with a gelatinous resin part of low elasticity, the weight part is easily displaced by an external acceleration. Thus, an acceleration can be detected with accuracy. Furthermore, long-term reliability equal to those of regular resin packages is ensured because those portions of an acceleration sensor device which are not used for acceleration sensing are sealed with a resin part.

Abstract: An acceleration sensor whose characteristics including sensitivity are less likely to change relative to disturbance force applied to a sensor chip. The acceleration sensor has a support frame, a weight supported within the support frame via flexible beams, semiconductor piezoresistance elements provided on the beams, and wiring interconnecting the piezoresistance elements. The acceleration sensor detects acceleration from changes in resistance of the piezoresistance elements. Stress damping sections are provided on those portions of the beams which exclude the portions where the piezoresistance elements are provided. Each stress damping section is symmetrical with respect to the point of intersection between the length center line of the beam and the width center line of the beam. When disturbance force is applied to a sensor element in the direction in which the entire each of the beams extends, the stress damping sections absorbs the disturbance force.

Abstract: There is provided a multi-axis force sensor including first and second bridge circuit groups detecting resistances of respective first and second groups of strain resistance elements provided at respective strain producing portions. The strain producing portions are formed on two axes intersecting with respect to each other at a right angle. The first group of strain resistance elements are arranged on one axis across an action portion so as to face with respect to each other, and the second group of strain resistance elements are arranged on another axis across the action portion so as to face with respect to each other. The first bridge circuit groups respectively output a positive voltage when receiving tensile force, and the second bridge circuit groups respectively output a negative voltage when receiving tensile force.

Abstract: An acceleration sensor includes a semiconductor element built in a substrate, a wiring layer formed on the substrate, and a piezoresistor, formed on the substrate and made up of a part of the wiring layer, whose resistivity changes by the action of acceleration.

Abstract: An acceleration sensor of the present invention is a heat sensing type acceleration sensor, and includes a heating chip formed with a heating element on a surface thereof, and a sensor chip formed with a thermocouple element on a surface thereof and disposed so that the surface faces the surface of the heating chip.

Abstract: A mechanical-to-electrical sensing structure is provided with first and second movable blocks. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. At least a first gage link is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gage link. Electrochemistry is used to define the at least first gage.

Abstract: An acceleration sensor device comprising: an acceleration sensor chip comprising a mass portion, a support frame and flexible arms having piezo-resistors on their top surfaces; and an upper regulation plate having an IC circuit, which is larger in area than the support frame, bonded to a top surface of the support frame; wherein the acceleration sensor chip and the upper regulation plate are placed in a protection case with a lid. The regulation plate protrudes from outside walls of the support frame to partition the space accommodating the chip in the protection case by the protrusion and to prevent air circulation above and below the regulation plate, so that a temperature rise due to the IC circuit among the piezo-resistors provided on the top surfaces of the flexible arms is kept uniform to reduce offset voltage.

Abstract: An MEMS (Micro Electro Mechanical Systems) sensor includes a base layer and a deformation portion provided on the base layer at an interval from the base layer and deformed by external force. The deformation portion is made of an organic material.

Abstract: The MEMS sensor according to the present invention includes: a substrate; a supporting portion provided on one surface of the substrate; a beam, supported by the supporting portion, having a movable portion opposed to the surface of the substrate through a space; a resistive conductor formed on at least the movable portion of the beam; a weight arranged on a side of the beam opposite to the substrate; and a coupling portion, made of a metallic material, coupling the beam and the weight with each other.

Abstract: An acceleration sensor has a semiconductor acceleration sensor chip and a case. The semiconductor acceleration sensor chip has a fixed portion, a plummet portion surrounding the fixed portion without contacting the fixed portion, and a beam portion connecting the fixed portion and the plummet portion, the thickness of the beam portion being thinner than the thickness of the fixed portion. The case has a cavity housing the semiconductor acceleration sensor chip, and a projection portion formed on the bottom face of the cavity, the bottom face of the fixed portion being fixed to the top face of the projection portion.

Abstract: In a sensing unit according to the present invention, a spring portion having a support portion and a movable portion is conductive. A signal of a sensor portion provided on the movable portion of the spring portion is transmitted via the spring portion. Hence, the sensing unit according to the present invention has a simple constitution with a small number of components, and a wire does not necessarily have to be provided for each sensor portion. As a result, a reduction in manufacturing cost, simplification of the manufacturing process, and so on are achieved.

Abstract: The acceleration sensor according to the present invention includes a sensor chip having a movable portion operating in response to a change in a physical quantity and a silicon chip arranged to be opposed to a first side of the sensor chip and bonded to the sensor chip, while the sensor chip is provided with a penetrating portion penetrating the sensor chip in the thickness direction so that the first side is visually recognizable from a second side of the sensor chip, and the silicon chip is provided with an alignment mark on a portion opposed to the penetrating portion.

Abstract: An acceleration sensor chip package includes an acceleration sensor chip; a sensor control chip; a re-wiring layer; an outer terminal; a sealing portion; and a substrate. The acceleration sensor chip includes a frame portion; a movable structure; a detection element; and an electrode pad electrically. The re-wiring layer has a wiring portion connected to the electrode pad. The electrode pad is electrically connected to a conductive bump. The sensor control chip has a sensor control electrode pad electrically connected to the conductive bump. The outer terminal is connected to the wiring portion and disposed in the outer region. The sealing portion seals the sensor control chip, the electrode pad, and the re-wiring layer, so that the movable structure is movable. The substrate is attached to the acceleration sensor chip to seal an opening portion.

Abstract: An acceleration sensor has a semiconductor acceleration sensor chip and a case. The semiconductor acceleration sensor chip has a fixed portion, a plummet portion surrounding the fixed portion without contacting the fixed portion, and a beam portion connecting the fixed portion and the plummet portion, the thickness of the beam portion being thinner than the thickness of the fixed portion. The case has a cavity housing the semiconductor acceleration sensor chip, and a projection portion formed on the bottom face of the cavity, the bottom face of the fixed portion being fixed to the top face of the projection portion.

Abstract: A micromechanical device and a method for producing this device are provided, the device having a sensor pattern that includes a spring pattern and a seismic mass. The seismic mass may be connected to the substrate material via the spring pattern, and a clearance may be provided in a direction perpendicular to the major substrate plane between the spring pattern and the substrate material. Alternatively, the spring pattern and the seismic mass may have a common, essentially continuous, front side surface.

Abstract: A semiconductor sensor of the present invention is capable of preventing a diaphragm portion of the sensor from being damaged if a weight collides against a semiconductor integrated circuit substrate of the sensor and is further capable of preventing the diaphragm portion from being bent significantly even when a semiconductor sensor element of the sensor is disposed inside a distorted or deformed casing. A rear surface of the semiconductor integrated circuit substrate 7 is joined onto a wall surface of the casing 9 that defines a receiving chamber of the casing. A support portion of the semiconductor sensor element is joined onto a front surface 7a of the semiconductor integrated circuit substrate 7.