Abstract: In a sensing unit according to the present invention, a movable portion of a spring portion is supported floatably above a recessed portion formed in a substrate. Thus, the movable portion is capable of oscillating in any direction parallel to the substrate surface. Moreover, the movable portion is capable of oscillating in the thickness direction of the substrate such that the amplitude of a center side end portion thereof reaches a maximum. A sensor portion is provided on the movable portion. As a result, the sensing unit according to the present invention has a higher degree of freedom in terms of the measurement direction than a conventional sensing unit that oscillates in only one direction.

Abstract: An acceleration sensor device includes an acceleration sensor chip fixed onto a substrate at its bottom, sealed with a molding resin. The acceleration sensor chip has an airtight sealed space for a weight portion to swing in, in accordance with acceleration applied, and a cushion member which covers a side surface and a top surface of the acceleration sensor chip is interposed between the molding resin and the acceleration sensor chip.

Abstract: An accelerometer includes a cantilever mass with a thin beam element between the mass and the fixed end of the accelerometer. The end of the mass is tapered. A limiting member has an aperture that is tapered corresponding to the taper at the end of the mass and positioned to surround the tapered end of the seismic mass. The beam accelerometer as well as the limiting member is placed in a cylindrical housing whereby the limiting member is moved along the taper of the seismic mass to adjust the spacing between the limiting member and the inner wall of the housing to thereby adjust the amount of movement of the seismic mass. In one embodiment the aperture of the tapered limited member also surrounds the seismic mass but the gap between the inner wall of the tapered limiting member and the outer wall of the seismic mass is adjusted to determine the amount of movement of the beam.

Abstract: An acceleration sensor having a high impact resistance to prevent breakage under excessive acceleration, but can stably exert a sensing performance. The acceleration sensor is formed of an SOI substrate of a three-layered structure including a silicon layer (active layer silicon), a silicon oxide layer, and a silicon layer (substrate silicon). The acceleration sensor includes frame parts, a plurality of beam parts, the beam parts projecting inward from the frame part, and a weight part supported by the beam parts. A strain sensing part is provided on each of the beam parts. A width W of each of the beam parts, a length I of each of the beam parts, and an inner frame length L of the frame part satisfy the following relationships of Expressions (1) and (2). 2<L/I?2.82??Expression (1) I/W?3.

Abstract: An acceleration sensor chip package includes an acceleration sensor chip formed of a frame portion with an opening portion, a movable structure, a detection element, and an electrode pad. The movable structure has a beam portion and a movable portion supported on the beam portion to be movable. The acceleration sensor chip package further includes a re-wiring layer with a wiring portion having one end connected to the electrode pad; an outer terminal connected to the other end of the wiring portion; a first sealing portion for sealing the electrode pad and the re-wiring layer; and a substrate for sealing the opening portion of the frame portion.

Abstract: Although a weight part of an acceleration sensor chip fixed on a die pad is coated with a gelatinous resin part of low elasticity, the weight part is easily displaced by an external acceleration. Thus, an acceleration can be detected with accuracy. Furthermore, long-term reliability equal to those of regular resin packages is ensured because those portions of an acceleration sensor device which are not used for acceleration sensing are sealed with a resin part.

Abstract: A pivoted acceleration sensor has a substrate that is substantially parallel to first and second surfaces. A reference frame is provided. A first unbalanced seismic mass is suspended within the reference frame and is coupled with the reference frame through first and second strain gauges. The first and second strain gauges are located along a pivot axis of the first unbalanced seismic mass. The first and second strain gauges are first and second piezoresistors on the first surface of the substrate, A second unbalanced seismic mass is flexibly coupled with the first unbalanced seismic mass. The second unbalanced seismic mass is suspended within the reference frame and is coupled with the reference frame through third and fourth strain gauges. The third and fourth strain gauges are located along a pivot axis of the second unbalanced seismic mass. The third and fourth strain gauges are third and fourth piezoresistors on the first surface of the substrate.

Abstract: A semiconductor acceleration sensor includes an acceleration sensor chip that includes a weight portion, a base portion provided around the weight portion with a gap therebetween, and beam portions flexibly connecting the weight portion and the base portion; and a stopper plate that is provided above the acceleration sensor chip. The stopper plate includes: a plurality of fixing portions that are protrudingly provided at positions opposite to the base portion and are fixed to the base portion; first concave portions that are formed around the fixing portions at positions opposite to the weight portion and define the displacement of the weight portion; and a second concave portion that is formed at a position opposite to the beam portions and is deeper than the first concave portion.

Abstract: A mechanical-to-electrical sensing structure has first and second movable blocks formed in a handle layer. A first hinge is coupled to the first and second movable blocks and configured to resist loads other than flexing of the first hinge. The first hinge is formed in the handle layer. A first gauge is separated from the first hinge and aligned to provide that a moment tending to rotate one of the first or second blocks relative to the other about the first hinge applies a tensile or compressive force along a length of the first gauge. The first gauge is formed from a device layer with an oxide between the device and handle layers. The sensing structure is made from an SOI wafer, and the first gauge is protected during an etching away of handle material beneath the first gauge by an oxide between the device and handle layers and an etch-resistant oxide or nitride on exterior surfaces of the first gauge.

Abstract: Provided is a piezo-resistor type acceleration sensor in which an offset voltage does not fluctuate even when excessive impact/acceleration is applied. In the acceleration sensor, metal wires on top surfaces of a flexible portion and a weight are arranged in grooves formed on the flexible portion top surface/weight top surface. The acceleration sensor has a structure in which the metal wires do not hit an upper regulation plate even when the weight collides with the upper regulation plate, and the offset voltage fluctuation can be avoided.

Abstract: Although a weight part of an acceleration sensor chip fixed on a die pad is coated with a gelatinous resin part of low elasticity, the weight part is easily displaced by an external acceleration. Thus, an acceleration can be detected with accuracy. Furthermore, long-term reliability equal to those of regular resin packages is ensured because those portions of an acceleration sensor device which are not used for acceleration sensing are sealed with a resin part.

Abstract: An acceleration sensor includes a base having an XY-substrate surface which is parallel to an XY plane, a beam portion having a frame shape which is arranged in a floating state above the XY-substrate surface of the base, a beam-supporting fixed portion which supports the beam on the base via supporting units like a beam supported by its both ends, weight portions 7 which are arranged so as to float above the XY-substrate surface of the base, and connecting portions which support the weight portions 7 to the beam portion in a cantilever manner. The weight portions are displaceable in the X-axis direction, the Y-axis direction, and the Z-axis direction by the bending deformation of the frame-shaped beam portion. The beam portion is provided with an X-axis direction acceleration detecting portion, a Y-axis direction acceleration detecting portion, and a Z-axis direction acceleration detecting portion.

Abstract: A micromechanical device and a method for producing this device are provided, two sensor patterns being provided in the semiconductor material to record two mechanical variables, in particular the pressure and the acceleration. The functionality of both sensor patterns is based on the same predefined converter principle.

Abstract: A triaxial acceleration sensor module 100 includes: a hollow housing 30 provided with a partition plate 31 having a through-hole 32; a triaxial acceleration sensor 1 provided inside the housing 30; and a sensor driving IC 40 for driving the triaxial acceleration sensor 1. The triaxial acceleration sensor 1 includes: a frame 23; a weight member 22 provided inside the frame 23; a weight member supporting portion 15 for supporting the weight member 22 in a freely suspended manner; and a plurality of flexible beams each having piezo resistance elements 13 thereon. In the triaxial acceleration sensor module 100, the through-hole 32 has a size through which the triaxial acceleration sensor 1 can pass. Further, the triaxial acceleration sensor 1 is directly bonded to the sensor driving IC 40 via the through-hole 32, and the sensor driving IC 40 is bonded to the partition plate 31 of the housing 30.

Abstract: A semiconductor acceleration sensor device has an acceleration sensor chip and a hollow package to house the acceleration sensor chip. A concave section is formed in a predetermined area on a bottom face inside the package. The semiconductor acceleration sensor device also has a low elasticity element with adhesiveness. The low elasticity element is filled in the concave section. The acceleration sensor chip is mounted on the low elasticity element. The adhesive surface between the low elasticity element and the acceleration sensor chip is higher than the bottom face.

Abstract: An acceleration sensor includes a mass and a supporting member linked by a flexible beam. A strain detector having low-resistance areas at both ends is formed near a boundary between the beam and the mass or between the beam and the supporting member A dielectric film formed on the supporting member and the beam has multiple contact holes disposed over each low-resistance area. Wiring formed on the dielectric film is connected to the low-resistance areas through the contact holes. The provision of multiple contact holes for each low-resistance area extends the life of the acceleration sensor by preventing sensor failure due to the separation or other failure of any single contact.

Abstract: An acceleration sensor has a mass movably linked to a peripheral attachment section to which at least one stopper is attached to stop the motion of the mass in a certain direction. In the absence of acceleration, the mass rests at a distance from a first surface of the stopper. A quantity of a curable elastic adhesive on a second surface of the stopper absorbs impact of the mass on the first surface, enabling the acceleration sensor to survive mechanical shock. The curable elastic adhesive may adhere to the cover of a package in which the acceleration sensor is enclosed. The curable elastic adhesive may be applied as a drop or swath from a dispenser, which simplifies the manufacturing process and reduces the manufacturing cost.

Abstract: An accelerometer includes a cantilever mass with a thin beam element between the mass and the fixed end of the accelerometer. The end of the mass is tapered. A limiting member has an aperture that is tapered corresponding to the taper at the end of the mass and positioned to surround the tapered end of the seismic mass. The beam accelerometer as well as the limiting member is placed in a cylindrical housing whereby the limiting member is moved along the taper of the seismic mass to adjust the spacing between the limiting member and the inner wall of the housing to thereby adjust the amount of movement of the seismic mass. In one embodiment the aperture of the tapered limited member also surrounds the seismic mass but the gap between the inner wall of the tapered limiting member and the outer wall of the seismic mass is adjusted to determine the amount of movement of the beam.

Abstract: An acceleration sensor device comprising: an acceleration sensor chip comprising a mass portion, a support frame and flexible arms having piezo-resistors on their top surfaces; and an upper regulation plate having an IC circuit, which is larger in area than the support frame, bonded to a top surface of the support frame; wherein the acceleration sensor chip and the upper regulation plate are placed in a protection case with a lid. The regulation plate protrudes from outside walls of the support frame to partition the space accommodating the chip in the protection case by the protrusion and to prevent air circulation above and below the regulation plate, so that a temperature rise due to the IC circuit among the piezo-resistors provided on the top surfaces of the flexible arms is kept uniform to reduce offset voltage.

Abstract: An acceleration sensor-attached tire is provided which can detect acceleration in one arbitrary direction, in two or more directions where vectors are linearly independent of each other, or in two or more directions where vectors of the detected acceleration cross each other generated in a tire in a practical velocity range. A sensor unit 100 is embedded inside a tire, and the acceleration in three directions crossing each other and generated in the tire 300 is detected by an acceleration sensor provided in this sensor unit, and the detected acceleration is transmitted. The acceleration sensor is a micro electro mechanical systems (MEMS) type sensor and comprises a semiconductor acceleration sensor.

Abstract: The piezo-resistance type triaxial acceleration sensor includes a frame section, a mass section disposed in the frame section, beam elements which flexibly support the mass section, and piezo-resistors for X, Y and Z axes of the frame section, formed on the beam elements. The length of the Z-axis piezo-resistors is longer than the length of the X-axis piezo-resistors and the Y-axis piezo-resistors, so as to decrease the sensitivity.

Abstract: Cost is reduced by simplifying the wiring while reducing power consumption. A multi-axis sensor unit (10) for measuring any one or more of multi-axis force, moment, acceleration and angular acceleration applied externally, comprising eight strain gauges (R11-R24) arranged on one plane, and one bridge circuit (11) formed by interlinking the strain gauges (R11-R24). As compared with a conventional multi-axis sensor unit, power consumption is reduced by decreasing the number of bridge circuits (11) and the strain gauges (R11-R24), and production cost is lowered by simplifying the wiring.

Abstract: An acceleration sensing device includes a movable sensing member, a frame member and a supporting member. The supporting member is coupled between the movable sensing member and the frame member so as to support the movable sensing member. The acceleration sensing device further includes a covering member disposed above the movable sensing member, with a gap between the covering member and the movable sensing member. The acceleration sensing device still further includes internal electrodes, interconnection films, external electrodes and a resin film. The internal electrodes are arranged around the covering member. The interconnection films are disposed on the frame member so as to be coupled to the internal electrodes. The external electrodes are disposed on the interconnection films. The resin film is disposed on the frame member so as to seal the covering member.

Abstract: The present invention provides an acceleration sensor that improves endurance by avoiding damage to stopper portions. When a downward vibration is applied to a weight member and the weight member displaces downward, a bottom face of the weight member abuts a bottom plate, and the weight member stops and downward displacement is obstructed. Furthermore, when the weight member displaces upward, peripheral weight portions abut stopper portions, and the weight member stops and upward displacement is obstructed. Because displacement of the weight member is obstructed by abutting the stopper portions, if the strength of the stopper portions is low, the stopper portions may be damaged. However, by providing reinforcement portions which reinforce the stopper portions, damage to the stopper portions may be prevented, and endurance of the acceleration sensor is improved.

Abstract: A disclosed semiconductor sensor includes a proof-mass, a frame disposed around the proof-mass and including at least a silicon layer, a beam for supporting the proof-mass, the beam being disposed at a first surface side of the frame between the proof-mass and the frame, a piezoresistor disposed on the beam, a metal wiring pattern and a pad electrode formed on the first surface of the frame and electrically connected to the piezoresistor, a cover plate disposed above and spaced apart from the proof-mass and the beam at the first surface side of the frame and fixed to a cover plate fixing area disposed on the first surface of the frame, and a projection disposed on the proof-mass at the first surface side to prevent the proof-mass from sticking to the cover plate.

Abstract: A MEMS silicon inertial sensor formed of a mass that is supported and constrained to vibrate in only specified ways. The sensors can be separately optimized from the support, to adjust the sensitivity separate from the bandwidth. The sensor can sense three dimensionally, or can only sense in a single plane.

Abstract: This invention relates to a resonant device with detection in the piezo-resistive plane made using surface technologies on a bulk, which comprises a resonator connected to this bulk by at least one embedded portion, means of exciting this resonator and detection means comprising at least one suspended beam type strain gauge made from piezo-resistive material, in which each strain gauge has a common plane with the resonator, and is connected to this resonator at a point situated outside of this at least one embedded portion to increase the stress observed by this strain gauge.

Abstract: An object of the present invention is to provide a semiconductor acceleration sensor capable of sensing accelerations in two directions parallel to the surface of a diaphragm and orthogonal to each other with respective proper sensitivities. There is constructed a semiconductor acceleration sensor 10 constituted of diaphragm pieces 13a to 13d extending from the center of the diaphragm surface to a wafer outer-circumferential frame section 12a, respectively, along an X axis direction and a Y axis direction orthogonal to each other. On the upper surface of the diaphragm pieces, there are formed piezo resistors Rx1 to Rx4, Ry1 to Ry4, Rz1 to Rz4. In the diaphragm pieces 13a and 13b disposed on a single line along the X axis direction and the diaphragm pieces 13c and 13d disposed on a single line along the Y axis direction, the areas of cross section orthogonal to the axis are set according to a maximum value of acceleration, respectively, in the X axis direction or Y axis direction.

Abstract: A sensor for detecting an amount of material deposition. The sensor includes a substrate, a heater disposed on the substrate, and a temperature sensor. The heat and the temperature sensor are separated from one another by a gap.

Abstract: According to the present invention, a semiconductor acceleration sensor fabricated using a semiconductor substrate comprises: an outer frame formed by the semiconductor substrate; a plurality of beam portions formed by the semiconductor substrate and connected to the outer frame; a first mass portion formed by the semiconductor substrate and connected to the beam portion; and a second mass portion connected to the end face opposite to the beam portion of the first mass portion. The second mass portion is formed of material having a higher specific gravity than the first mass portion.

Abstract: There is provided a load sensor that can make accurate measurement without being affected by unnecessary external force and moreover has a simple construction. The load sensor includes a strain generating element (3) which is formed integrally with an installation section (9) attached to an object to be measured and is displaced according to the weight or load of the object to be measured, a sensor plate (13) which is connected to the strain generating element (3) and is distorted according to the displacement of the strain generating element (3), and a strain gauge attached to the sensor plate (13). The strain generating element (3) is placed on one end side of the installation section (9) with the center thereof aligned with the axis of the installation section (9). On the inside of the strain generating element, a reception section (5) for housing the sensor plate is formed, and the sensor plate (13) is housed in the reception section while being held by a holder (100).

Abstract: A flexible substrate (110) having flexibility and a fixed substrate (120) disposed so as to oppose it are supported at their peripheral portions by a sensor casing (140). An oscillator (130) is fixed on the lower surface of the flexible substrate. Five lower electrode layers (F1 to F5: F1 and F2 are disposed at front and back of F5) are formed on the upper surface of the flexible substrate. Five upper electrode layers (E1 to E5) are formed on the lower surface of the fixed substrate so as to oppose the lower electrodes. In the case of detecting an angular velocity ?x about the X-axis, an a.c. voltage is applied across a predetermined pair of opposite electrode layers (E5, F5) to allow the oscillator to undergo oscillation Uz in the Z-axis direction. Thus, a Coriolis force Fy proportional to the angular velocity ?x is applied to the oscillator in the Y-axis. By this Coriolis force Fy, the oscillator is caused to undergo displacement in the Y-axis direction.

Abstract: A semiconductor sensor is disclosed that includes a proof mass, a frame that is arranged around the proof mass, a beam that is arranged at the surface side of the frame and is configured to support the proof mass, plural piezo-resistive elements arranged on the beam, plural metal wiring patterns and pad electrodes that are arranged on the surface of the frame and are electrically connected to the piezo-resistive elements, a cover plate that is fixed to the surface of the frame and is arranged to be spaced apart from the proof mass and the beam, and a cover plate fixing region for fixing the cover plate to the surface of the frame, the cover plate fixing region including a formation region for the metal wiring patterns.

Abstract: A semiconductor sensor is disclosed that includes a substrate including at least a semiconductor layer. The substrate includes a weight arranging part in the vicinity of the center of the substrate, a flexible part around the weight arranging part, and supporting parts provided around the flexible part. The semiconductor sensor further includes a weight arranged on the weight arranging part. The weight is made of a material different from that of the weight arranging part and the flexible parts.

Abstract: A thermal accelerometer device that allows up to three axes of acceleration sensing. The thermal accelerometer includes a substantially planar substrate, a cavity formed in the substrate, a heater element, and at least first and second temperature sensing elements. The heater element is suspended over the cavity, and the first and second temperature sensing elements are disposed along the X or Y axis in the substrate plane on opposite sides of and at equal distances from the heater element. The thermal accelerometer employs differential temperatures detected by the temperature sensing elements to provide indications of acceleration in the X or Y directions. Further, the thermal accelerometer employs a common mode temperature detected by the temperature sensing elements to provide an indication of acceleration along a Z axis perpendicular to the X and Y axes.

Abstract: A acceleration sensor includes a supporting part, a beam part connected to the supporting part, a weight part connected to the beam part, and a protruding part formed beneath the beam part so that the protruding part supports the beam part. With such an arrangement, the adjustment of the sensitivity of the acceleration sensor can be easily performed, as well as the evaluation of the acceleration sensor.

Abstract: A system and method for inputting motion measurement data into a computationally based device are provided. In a first version three-axis accelerometer determines components of an inertial force vector with respect to an orthogonal coordinate system. The accelerometer includes a sensor die made of a semiconductor substrate having a frame element, a proof mass element, and an elastic element mechanically coupling the frame and the proof mass. The accelerometer also has three or more stress-sensitive IC components integrated into the elastic element adjacent to the frame element for electrical connectivity without metal conductor traversal of the elastic element.

Abstract: A MEMS silicon inertial sensor formed of a mass that is supported and constrained to vibrate in only specified ways. The sensors can be separately optimized from the support, to adjust the sensitivity separate from the bandwidth. The sensor can sense three dimensionally, or can only sense in a single plane. Vibration cancellation may be provided.

Abstract: An acceleration sensor that suppresses fluctuations in the offset voltage and with an enhanced temperature characteristic is provided. The acceleration sensor comprises an weight that is formed in the center of a semiconductor substrate; a frame that is formed at the circumference of the weight; a beam or diaphragm that connects the weight and frame; a detection element that is formed on the beam or diaphragm and which detects bending of the beam or diaphragm that corresponds with the applied acceleration; and a lead that is formed on the beam or diaphragm and which guides the detection output of the detection element to a pad that is provided on the frame, wherein a dummy lead comprising a plurality of dot patterns which are at least electrically independent of the lead formed on the beam or diaphragm is formed on the beam or diaphragm.

Abstract: An acceleration sensor includes a base portion shaped into the form of a frame, a weight portion located inside the base portion and disposed away from the base portion, a flexible beam portion disposed over an upper portion of the base portion and an upper portion of the weight portion and a stopper portion disposed above the base portion and disposed over the weight portion away from the weight portion, wherein the stopper portion restricts an amount of displacement of the weight portion in the direction of the stopper portion.

Abstract: A low-cost breakable inertial threshold sensor using mainly micro-machining silicon technology constructed on a silicon-wafer or on some other brittle material according to the MEMS process. The sensor comprises a first body portion, a second body portion, and detecting means for giving an indication if the second body portion has damaged the detecting means. The status of the sensor can be read in various ways. In one embodiment the status is remotely readable.

Abstract: An acceleration sensor chip package includes an acceleration sensor chip; a sensor control chip; a re-wiring layer; an outer terminal; a sealing portion; and a substrate. The acceleration sensor chip includes a frame portion; a movable structure; a detection element; and an electrode pad electrically. The re-wiring layer has a wiring portion connected to the electrode pad. The electrode pad is electrically connected to a conductive bump. The sensor control chip has a sensor control electrode pad electrically connected to the conductive bump. The outer terminal is connected to the wiring portion and disposed in the outer region. The sealing portion seals the sensor control chip, the electrode pad, and the re-wiring layer, so that the movable structure is movable. The substrate is attached to the acceleration sensor chip to seal an opening portion.

Abstract: A semiconductor acceleration sensor includes an outer frame portion; a weight portion; a pair of X-axis flexible portions; a pair of Y-axis flexible portions; first to fourth X-axis resistor elements; first to fourth Y-axis resistor elements; and first to fourth Z-axis resistor elements. The first to fourth X-axis resistor elements are disposed on the X-axis flexible portions, and the first to fourth Y-axis resistor elements are disposed on the Y-axis flexible portions. The first to fourth Z-axis resistor elements are disposed on ones of the X-axis flexible portions and the Y-axis flexible portions. Further, the first and second Z-axis resistor elements are arranged symmetrically with respect to the third and fourth Z-axis resistor elements with a center point of the weight portion as a symmetrical point.

Abstract: An acceleration sensor according to the present invention includes a semiconductor element built in a substrate, a wiring layer formed on the substrate, and a piezoresistor, formed on the substrate and made up of a part of the wiring layer, whose resistivity changes by the action of acceleration.

Abstract: There is provided a semiconductor-type three-axis acceleration sensor having a high shock resistance, a small difference between outputs of piezo resistors of X-axis, Y-axis and Z-axis, a small size, high sensitivity and a high output. A flexible arm is composed of flexible widening parts and a flexible parallel part. The flexible widening part has a maximum stress part. The piezo resistors are arranged on an upper surface of the flexible arm so that a terminal of the piezo resistor is positioned at the maximum stress part. The Z-axis piezo resistors are positioned close to the width centerline of the flexible arm, while the X-axis and Y-axis piezo resistors are apart from the width centerline. Moreover, the Z-axis piezo resistors are shifted in the longitudinal direction of the flexible arm from the maximum stress part so as to reduce the output difference between the X-axis, Y-axis and Z-axis piezo resistors.

Abstract: Disclosed is a multi-range three-axis acceleration sensor device in which a plurality of three-axis acceleration sensor elements are formed without axial deviation among them in a single silicon chip and have different acceleration measurement ranges. Each of the plurality of sensor elements includes a weight, a frame surrounding the weight and flexible members composed of beams or diaphragm connecting the weight with the frame. Each of the plurality of sensor elements causes different output voltage for unit acceleration from another. A first three-axis acceleration sensor element among the plurality of sensor elements has other sensor elements of them formed in a frame of the first one and causes a larger output voltage for unit acceleration than the others.

Abstract: The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane.

Abstract: An acceleration sensor includes a mass and a supporting member linked by a flexible beam. A strain detector having low-resistance areas at both ends is formed near a boundary between the beam and the mass or between the beam and the supporting member. A dielectric film formed on the supporting member and the beam has multiple contact holes disposed over each low-resistance area. Wiring formed on the dielectric film is connected to the low-resistance areas through the contact holes. The provision of multiple contact holes for each low-resistance area extends the life of the acceleration sensor by preventing sensor failure due to the separation or other failure of any single contact.

Abstract: A semiconductor device includes a lead frame. The lead frame has a chip mounting section and a plurality of leads. The chip mounting section has a base section, an insulation film covering the base section, a plurality of inter-connect sections, and a chip mounting area. The leads surround the chip mounting section. The semiconductor device also includes a first semiconductor chip having a plurality of first electrode pads. The semiconductor device also includes first bonding wires for connecting the first electrode pads to the inter-connect sections. The semiconductor device also includes a second semiconductor chip which has a cavity and a plurality of second electrode pads. The first semiconductor chip and the first bonding wires are received in the cavity. Second bonding wires connect the inter-connect sections exposed from the second semiconductor chip to the leads. Third bonding wires connect the second electrode pads to the leads. The semiconductor device also includes a sealing section.

Abstract: 3D accelerometer for measuring three components of inertial force (or acceleration) vector with respect to an orthogonal coordinate system, which has high sensitivity due to a big proof mass located within a cavity beneath the surface of the sensor die. The size of the cavity and the size of the proof mass exceed the corresponding overall dimensions of the elastic element. The sensor structure occupies a very small area at the surface of the die increasing the area for ICs need to be integrated on the same chip.