Abstract: A method for preparing coatings, particularly imaged surfaces such as photoresists, printing plates, etc. which includes coating the surface of a substrate with a solid curable composition containing styrene-allyl alcohol copolymer based polyene and polythiol components, curing the composition by exposing selected areas thereof to a free radical generating source, e.g. actinic radiation and removing e.g. by dissolving the uncured, unexposed areas of the curable composition to bare the underlying substrate. The solid polyene component is a reaction product of a copolymer of styrene-allyl alcohol and an unsaturated isocyanate e.g. allyl isocyanate or an unsaturated acid e.g. acrylic acid. The solid polythiol is a reaction product of a copolymer of styrene-allyl alcohol and a mercapto carboxylic acid, e.g. .beta.-mercaptopropionic acid.

Abstract: Compounds having at least three 3-sorboyloxy-2-hydroxypropyl groups directly attached to ether oxygen atoms are polymerised by exposure to actinic radiation, preferably in the presence of a sensitiser such as Michler's ketone or benzoin. The compounds may be obtained by the reaction either of sorbic acid with a substance having at least three glycidyl ether groups or of glycidyl sorbate with a substance having at least three phenolic or alcoholic hydroxyl groups: if desired, not all of the glycidyl groups may be consumed, so that, after actinically-induced polymerisation, the epoxide-containing polymer may be cross-linked by reaction with a curing agent for epoxide resins.The compounds are useful in making printed circuits or printing plates for offset printing.

Abstract: In contact type photolithographic masking processes for fabricating planar structures, a photoresist is applied to a wafer and a mask is placed over the photoresist. Illumination through the mask, which has a pattern of opaque areas, produces a photochemical reaction in the photoresist which upon developing creates a duplicate of the mask pattern. However, the photoresist is conventionally applied by a spinning process and the rotation produces a build-up of the photoresist around the edges of the wafer. This build-up prevents the pattern portion of the mask from making good physical contact with the photoresist with a resultant decrease in reproducibility and accuracy of the fabricated pattern. A modified mask is formed with a channel corresponding to the peripheral build-up. The channel accepts the build-up so that good contact may be maintained between the photoresist and the patterned portion of the mask.

Abstract: In preparing an electron beam resist film of a copolymer of an olefin and SO.sub.2, the steps of removing insoluble particles, drying the films under high vacuum and storing them in a moisture-free atmosphere are required to prevent cracking of the films during development.

Abstract: Three developer solvents 2-methylcyclohexanone, 3-methylcyclohexanone, and a mixture of acetonyl acetate and acetone, improve the resolution of electron beam exposed films of poly(1-methyl-1-cyclopentene-SO.sub.2) copolymers.

Abstract: A high sensitivity resist layer structure for high energy radiation exposure is formed by coating plural layers of radiation degradable polymers on a substrate which layers are successively slower dissolving in the resist developer. Upon exposure and solvent development, a resist edge profile is obtained which is particularly useful for metal lift-off.

Abstract: Photolithographic techniques are employed to fabricate hemispherical or semicylindrical microlenses on the end surfaces of optical fibers. The power coupling efficiency between junction lasers and fibers is thereby significantly increased.

Abstract: A light-sensitive material comprising a support carrying a coating of a phopolymerisable epoxy resin composition containing, as a photo-sensitive compound capable of catalyzing hardening of the epoxy resin, a diazonium salt soluble in organic solvents and whereof the cation is devoid of basic groups and the anion is selected from the following: difluorophosphate, phosphotungstate, phosphomolybdate, tungstogermanate, silicotungstate and molybdosilicate.

Abstract: Very sensitive electron beam positive resists have been obtained using films of polymeric methyl methacrylate containing acetate polymers.

Abstract: A light-sensitive composition comprising novel arylglyoxyalkyl acrylates that exhibits useful light sensitivity. The basic structure of the new compositions, which may also themselves be polymerized are as follows: ##EQU1## wherein Ar represents an aromatic structure selected from the group consisting of benzene, naphthalene and substituted products of each, R.sub.1 represents an alkyl group having from one to ten carbon atoms, R.sub.2 represents a grouping selected from the group consisting of hydrogen, or a lower alkyl group having from one to five carbon atoms and R.sub.3 represents an alkenyl group having from one to 10 carbon atoms and singular unsaturation. The light-sensitive compositions may themselves be utilized in photochemistry as photopolymers, they may be combined with suitable solvents and additives or polymerized with suitable backbone polymers to provide substances which can be used as light-sensitive coatings.

Abstract: The invention relates to a photopolymerizable copying composition comprising at least one polymerizable compound, at least one photo-initiator, and at least one copolymer of (A) an unsaturated carboxylic acid, (B) an alkyl methacrylate with at least 4 carbon atoms in the alkyl group, and (C) at least one additional monomer which is capable of copolymerization with monomers (A) and (B), the homopolymer of said additional monomer having a glass transition temperature of at least 80.degree.C.