Abstract: The present invention provides a process for the preparation of graphene or graphene-like fragments of another layered structure, said process comprising the step of mixing and grinding graphite or said other layered structure with at least one ionic liquid. The invention also provides the use of grinding in ionic liquids in such a process and products formed or formable by such methods.

Abstract: According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

Abstract: A method for depositing graphene is provided. The method includes depositing a layer of non-conducting amorphous carbon over a surface of a substrate and depositing a transition metal in a pattern over the amorphous carbon. The substrate is annealed at a temperature below 500° C., where the annealing converts the non-conducting amorphous carbon disposed under the transition metal to conducting amorphous carbon. A portion of the pattern of the transition metal is removed from the surface of the substrate to expose the conducting amorphous carbon.

Abstract: A graphene semiconductor including graphene and a metal atomic layer disposed on the graphene, wherein the metal atomic layer includes a metal, which is capable of charge transfer with the graphene.

Abstract: A method of forming a semiconductor device includes forming a field-effect transistor (FET), and forming a fuse which includes a graphene layer and is electrically connected to the FET.

Abstract: In general, in one aspect, a graphene film is used as a protective layer for current collectors in electrochemical energy conversion and storage devices. The graphene film inhibits passivation or corrosion of the underlying metals of the current collectors without adding additional weight or volume to the devices. The graphene film is highly conductive so the coated current collectors maintain conductivity as high as that of underlying metals. The protective nature of the graphene film enables less corrosion resistant, less costly and/or lighter weight metals to be utilized as current collectors. The graphene film may be formed directly on Cu or Ni current collectors using chemical vapor deposition (CVD) or may be transferred to other types of current collectors after formation. The graphene film coated current collectors may be utilized in batteries, super capacitors, dye-sensitized solar cells, and fuel and electrolytic cells.

Abstract: Disclosed is an electrode for an electrochemical energy storage device, the electrode comprising a self-supporting layer of a mixture of graphene sheets and spacer particles and/or binder particles, wherein the electrode is prepared without using water, solvent, or liquid chemical. The graphene electrode prepared by the solvent-free process exhibits many desirable features and advantages as compared to the corresponding electrode prepared by a known wet process. These advantages include a higher electrode specific surface area, higher energy storage capacity, improved or higher packing density or tap density, lower amount of binder required, lower internal electrode resistance, more consistent and uniform dispersion of graphene sheets and binder, reduction or elimination of undesirable effect of electrolyte oxidation or decomposition due to the presence of water, solvent, or chemical, etc.

Abstract: The electrode structure includes: a textile-type conductive substrate; a first layer which is disposed on the textile-type conductive substrate and includes a plurality of one-dimensional nanostructures; and a second layer which is formed on the first layer and includes a graphene material.

Abstract: Disclosed herein is a printed circuit board including: a substrate; one or more elastic electrode formed on the substrate and made of an elastic material; and one or more metal electrode formed on the elastic electrode.

Abstract: A graphene sheet including a lower sheet including 1 to 20 layers of graphene, and a ridge formed on the lower sheet and including more layers of the graphene compared with the lower sheet, the ridge having a shape of a grain boundary of a metal, a transparent electrode and an active layer including the same, and a display, an electronic device, an optoelectronic device, a battery, a solar cell, and a dye-sensitized solar cell including the transparent electrode and/or the active layer are provided.

Abstract: Disclosed herein is a graphene device having a structure in which a physical gap is provided so that the off-state current of the graphene device can be significantly reduced without having to form a band gap in graphene, and thus the on/off current ratio of the graphene device can be significantly increased while the high electron mobility of graphene is maintained.

Abstract: Disclosed is a silicon-carbon composite for a negative active material of a lithium secondary battery, including carbon nanofibers and silicon particles, wherein the silicon particles are coated with amorphous silica. In the silicon-carbon composite of the invention, silicon is provided in the form of a composite with carbon fibers and the surface of silicon particles is coated with amorphous silica, thereby reducing volume expansion upon lithium ion insertion and exhibiting superior ionic conductivity and electrical conductivity to thus maintain high capacity, and also, amorphous silica-coated silicon is positioned inside the carbon fibers having a one-dimensional structure, thus ensuring a large specific surface area and a stable composite structure.

Abstract: The present invention discloses a method for manufacturing a palladium-platinum core-shell catalyst for a fuel cell. More specifically, the present invention discloses a method for manufacturing a palladium-platinum core-shell catalyst for a fuel cell, in which a platinum shell nano particle epitaxially grown on a palladium core is synthesized and dipped in a carbon support, thereby manufacturing the palladium-platinum core-shell catalyst for a hydrogen fuel cell, such that mass production of a uniform size is possible. Additionally, the techniques herein reduce the requirement for the use of expensive metal, which reduces the manufacturing cost of a fuel cell. Moreover, is the techniques herein are applicable to the field of high-efficiency hydrogen fuel cells having superior electric catalytic activity and durability.

Abstract: A system and method for forming graphene on a substrate and an opposed wear member having a DLC coating. The system includes graphene formed by an exfoliation process to dispose solution processed graphene onto a substrate. The system further includes an opposing wear member of DLC disposed on another substrate and a gas atmosphere of an inert gas like N2.

Abstract: Engineered defects are reproduced in-situ with graphene via a combination of surface manipulation and epitaxial reproduction. A substrate surface that is lattice-matched to graphene is manipulated to create one or more non-planar features in the hexagonal crystal lattice. These non-planar features strain and asymmetrically distort the hexagonal crystal lattice of epitaxially deposited graphene to reproduce “in-situ” engineered defects with the graphene. These defects may be defects in the classic sense such as Stone-Wales defect pairs or blisters, ridges, ribbons and metacrystals. Nano or micron-scale structures such as planar waveguides, resonant cavities or electronic devices may be constructed from linear or closed arrays of these defects. Substrate manipulation and epitaxial reproduction allows for precise control of the number, density, arrangement and type of defects. The graphene may be removed and template reused to replicate the graphene and engineered defects.

Abstract: Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet.

Abstract: In one aspect, a method of forming contacts to source and drain regions in a FET device includes the following steps. A patternable dielectric is deposited onto the device so as to surround each of the source and drain regions. The patternable dielectric is exposed to cross-link portions of the patternable dielectric that surround the source and drain regions. Uncross-linked portions of the patternable dielectric are selectively removed relative to the cross-linked portions of the patternable dielectric, wherein the cross-linked portions of the patternable dielectric form dummy contacts that surround the source and drain regions. A planarizing dielectric is deposited onto the device around the dummy contacts. The dummy contacts are selectively removed to form vias in the planarizing dielectric which are then filled with a metal(s) so as to form replacement contacts that surround the source and drain regions.

Abstract: A current collector includes a support and at least one graphene layer located on the support. The support includes two surfaces. The at least one graphene layer is located on one of the two surfaces of the support. The at least one graphene layer includes a number of uniformly distributed graphenes.

Abstract: A thin film lithium ion battery includes a cathode electrode, an anode electrode, and a solid electrolyte layer. The solid electrolyte layer is sandwiched between the cathode electrode and the anode electrode. At least one of the cathode electrode and the anode electrode includes a current collector. The current collector is a carbon nanotube layer consisting of a plurality of carbon nanotubes.

Abstract: The disclosure provides a thermoelectric conversion structure and its use in heat dissipation device. The thermoelectric conversion structure includes a thermoelectric element, a first electrode and an electrically conductive heat-blocking layer. The thermoelectric element includes a first end and a second end opposite to each other. The first electrode is located at the first end of the thermoelectric element. The electrically conductive heat-blocking layer is between the thermoelectric element and the first electrode.

Abstract: In one aspect, a FET device is provided. The FET device includes a substrate; a semiconductor material on the substrate; at least one gate on the substrate surrounding a portion of the semiconductor material that serves as a channel region of the device, wherein portions of the semiconductor material extending out from the gate serve as source and drain regions of the device, and wherein the source and drain regions of the device are displaced from the substrate; a planarizing dielectric on the device covering the gate and the semiconductor material; and contacts which extend through the planarizing dielectric and surround the source and drain regions of the device.

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract: A lithium ion battery includes at least one battery cell. The battery cell includes a cathode electrode, an anode electrode, and a separator. The separator is sandwiched between the cathode electrode and the anode electrode. At least one of the cathode electrode and the anode electrode includes a current collector. The current collector is a graphene layer.

Abstract: Certain spin-coatable liquids and application techniques are described, which can be used to form nanotube films or fabrics of controlled properties. A spin-coatable liquid for formation of a nanotube film includes a liquid medium containing a controlled concentration of purified nanotubes, wherein the controlled concentration is sufficient to form a nanotube fabric or film of preselected density and uniformity, and wherein the spin-coatable liquid comprises less than 1×1018 atoms/cm3 of metal impurities. The spin-coatable liquid is substantially free of particle impurities having a diameter of greater than about 500 nm.

Abstract: The present invention provides a photoelectric conversion device that is durable, lightweight, and inexpensive, and has a network structure of organic semiconductor nanowires that has high durability and is suitable for charge transport. In addition, to provide the photoelectric conversion device, the present invention provides, as an electron-donating material, a material for a photoelectric conversion device, the material including phthalocyanine nanowires having a breadth of 50 nm or less and a ratio (length/breadth) of a length to the breadth, the ratio being 10 or more. According to the present invention, a photoelectric conversion device having a long life due to high light resistance of phthalocyanine can be provided at a low cost. Use of such photoelectric conversion devices can constitute a solar-cell module having a long life due to the feature of the photoelectric conversion devices and being manufactured at a low cost.

Abstract: The present application discloses novel endohedral fullerenes having enclosed therein one or more ozone molecules, e.g. fullerenes selected from C60-fullerene (Buckminsterfullerene), C70-fullerene, C76-fullerene, C78-fullerene, C82-fullerene, C84-fullerene, and C120-fullerene. The application further discloses a composition comprising the endohedral fullerene and a carrier material, e.g. where the carrier material is a skin lotion, such as a skin lotion comprising L-ascorbic acid or Vitamin E. Moreover, various uses of the novel fullerenes are disclosed, e.g. for skin UV-protection; in or on the surface of sun glasses; in or on the surface of window glass; in or on the surface of textiles, fabrics, clothes, wood, paint, paper, cushions, leather, hair-care products, and plants.

Abstract: A method of preparing graphene nanoribbons from a few-layer graphene film includes the steps of growing or placing a few-layer graphene film on a substrate, applying nanoparticles to a surface of the few-layer graphene layer on the substrate and performing chemical vapor etching. The resulting few-layer graphene nanoribbon has a thickness of between about 0.3 nm and about 50.0 nm and a width of between about 1.0 nm and about 20.0 nm.

Abstract: A bilayer complex proton exchange membrane and a membrane electrode assembly are provided. The bilayer complex proton exchange membrane includes a first complex structure and a second complex structure. The first complex structure includes 0.001-10 wt % of a graphene derivative with two dimension configuration, and 99.999-90 wt % of organic material. The organic material includes polymer material having sulfonic acid group or phosphate group. The second complex structure includes 0.5-30 wt % of inorganic material and 99.5-70 wt % of organic material, wherein a surface area of the inorganic material is 50-3000 m2/g, and the organic material includes polymer material with sulfonic acid group or phosphate group.

Abstract: A carbon-based semiconductor device includes a substrate, source/drain contacts, a graphene channel, a dielectric layer, and a gate. The source/drain contacts are formed on the substrate. The graphene channel is formed on the substrate connecting the source contact and the drain contact. The dielectric layer is formed on the graphene channel with a molecular beam deposition process. The gate contact is formed over the graphene channel and on the dielectric. The gate contact is in a non-overlapping position with the source and drain contacts leaving exposed sections of the graphene channel between the gate contact and the source and drain contacts.

Abstract: A composition of graphene-based nanomaterials and a method of preparing the composition are provided. A carbon-based precursor is dissolved in water to form a precursor suspension. The precursor suspension is placed onto a substrate, thereby forming a precursor assembly. The precursor assembly is annealed, thereby forming the graphene-based nanomaterials. The graphene-based nanomaterials are crystallographically ordered at least in part and configured to form a plurality of diffraction rings when probed by an incident electron beam. In one aspect, the graphene-based nanomaterials are semiconducting. In one aspect, a method of engineering an energy bandgap of graphene monoxide generally includes providing at least one atomic layer of graphene monoxide having a first energy bandgap, and applying a substantially planar strain is applied to the graphene monoxide, thereby tuning the first energy band gap to a second energy bandgap.

Abstract: Energy storage devices having hybrid anodes can address at least the problems of active material consumption and anode passivation that can be characteristic of traditional batteries. The energy storage devices each have a cathode separated from the hybrid anode by a separator. The hybrid anode includes a carbon electrode connected to a metal electrode, thereby resulting in an equipotential between the carbon and metal electrodes.

Abstract: A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.

Abstract: A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide.

Abstract: An apparatus and method are disclosed for electrically directly detecting biomolecular binding in a semiconductor. The semiconductor can be based on electrical percolation of nanomaterial formed in the gate region. In one embodiment of an apparatus, a semiconductor includes first and second electrodes with a gate region there between. The gate region includes a multilayered matrix of electrically conductive material with capture molecules for binding target molecules, such as antibody, receptors, DNA, RNA, peptides and aptamer. The molecular interactions between the capture molecules and the target molecules disrupts the matrix's continuity resulting in a change in electrical resistance, capacitance or impedance. The increase in resistance, capacitance or impedance can be directly measured electronically, without the need for optical sensors or labels.

Abstract: A titanium oxide nano tube material is configured so that crystal grains of a nano tube has a crystal structure oriented with the [001] direction of a tetragonal crystal system as a preferred direction. FWHM (Full Width at Half Maximum) of a rocking curve with respect to the (004) plane peak is 11.1 degrees to 20.3 degrees. The titanium oxide nano tube material has excellent photoelectric characteristics since the crystal grains of the nano tube are oriented with the (004) plane or the [001] direction of a tetragonal crystal system as a preferred direction.

Abstract: Disclosed herein is a solid-state imaging element including: a plurality of pixels including a photoelectric conversion section; and a nano-carbon laminated film disposed on a side of a light receiving surface of the photoelectric conversion section and formed with a plurality of nano-carbon layers, transmittance of light and a wavelength region of transmissible light changing in the nano-carbon laminated film according to a voltage applied to the nano-carbon laminated film.

Abstract: An apparatus comprises at least one transistor. The at least one transistor comprises a substrate, a graphene layer formed on the substrate, and first and second source/drain regions spaced apart relative to one another on the substrate. The graphene layer comprises at least a first portion and a second portion, the first portion being in contact with the first source/drain region and the second portion being in contact with the second source/drain region. One or more cuts are formed in at least one of the first and second portions of the graphene layer. The apparatus allows for lowered contact resistance in graphene/metal contacts.

Abstract: The synthesis of single graphene sheets decorated with metal or metal oxide nanoparticles, and their uses.

Abstract: An apparatus comprises at least one transistor. The at least one transistor comprises a substrate, a graphene layer formed on the substrate, and first and second source/drain regions spaced apart relative to one another on the substrate. The graphene layer comprises at least a first portion and a second portion, the first portion being in contact with the first source/drain region and the second portion being in contact with the second source/drain region. One or more cuts are formed in at least one of the first and second portions of the graphene layer. The apparatus allows for lowered contact resistance in graphene/metal contacts.

Abstract: Electromagnetic interference shielding structures and methods of shielding an object form electromagnetic radiation at frequencies greater than a megahertz generally include providing doped graphene sheets about the object to be shielded. The doped graphene sheets have a dopant concentration that is effective to reflect and/or absorb the electromagnetic radiation.

Abstract: A p-type transparent conductive oxide and a solar cell containing the p-type transparent conducting oxide, wherein the p-type transparent conductive oxide includes a molybdenum trioxide doped with an element having less than six valence electrons, the element is selected from the group consisting of alkali metals, alkaline earth metals, group III elements, group IV, group V, transition elements and their combinations. Doping an element having less than six valence electron results in hole number increase, and thus increasing the hole drift velocity, and making Fermi level closer to the range of p-type materials. Hence, a p-type transparent conductive material is generated. This p-type transparent conducting oxide not only has high electron hole drift velocity, low resistivity, but also reaches a transmittance of 88% in the visible wavelength range, and therefore it is very suitable to be used in solar cells.

Abstract: A resist composition for a black matrix, the resist composition including carbon nanotubes, a halosulfonic acid, an alcohol, an ammonium hydroxide compound, and a fluorosilane.

Abstract: A composite anode active material including metal core particles and carbon nanotubes that are covalently bound to the metal core particles, an anode including the composite anode active material, a lithium battery employing the anode, and a method of preparing the composite anode active material.

Abstract: This disclosure provides systems, methods, and apparatus related to graphene nanoribbons. In one aspect, a device includes a substrate and a first graphene nanoribbon overlying the substrate. The first graphene nanoribbon is less than about 20 nanometers wide.

Abstract: Disclosed is an integrated graphene film-enhanced display device, comprising: (a) a display device which comprises one or multiple heat sources and a back surface where a localized area is at a higher temperature than an adjacent area; and (b) a heat spreader which comprises at least one sheet of integrated graphene film having two major surfaces, wherein one of the major surfaces of the heat spreader is in thermal contact with one or multiple heat sources and further wherein the heat spreader itself reduces the temperature difference between locations on the display device. The integrated graphene film, either a graphene film obtained from a graphene oxide gel or a graphene composite film formed of graphene oxide gel-bonded nano graphene platelets (NGPs), exhibits highest thermal conductivity and highest effectiveness in reducing hot spots in various kinds of display devices.

Abstract: A method to fabricate a novel graphene based, electrically tunable, nanoconstriction device is described. The device includes a back-gate dielectric layer formed over a conductive substrate. The back-gate dielectric layer is, in one example, hexagonal boron nitride, mica, SiOx, SiNx, BNx, HfOx or AlOx. A graphene layer is an AB-stacked bi-layer graphene layer, an ABC-stacked tri-layer graphene layer or a stacked few-layer graphene layer. Contacts are formed over a portion of the graphene layer including at least one source contact, at least one drain contact and at least one set of side-gate contacts. A graphene channel with graphene side gates is formed in the graphene layer between the at least one source contact, the at least one the drain contact and the at least one set of side-gate contacts. A top-gate dielectric layer is formed over the graphene layer. A top-gate electrode is formed on the top-gate dielectric layer.

Abstract: A rechargeable lithium cell comprising: (a) an anode comprising a prelithiated lithium storage material or a combination of a lithium storage material and a lithium ion source; (b) a hybrid cathode active material composed of a meso-porous structure of a carbon, graphite, metal, or conductive polymer and a phthalocyanine compound, wherein the meso-porous structure is in an amount of from 1% to 99% by weight based on the total weight of the meso-porous structure and the phthalocyanine combined, and wherein the meso-porous structure has a pore with a size from 2 nm to 50 nm to accommodate phthalocyanine compound therein; and (c) an electrolyte or electrolyte/separator assembly. This secondary cell exhibits a long cycle life and the best cathode specific capacity and best cell-level specific energy of all rechargeable lithium-ion cells ever reported.

Abstract: A dual electroplating cell comprising: (a) an electrolyte component containing therein ions of a first metal; (b) a porous cathode current collector having surface areas to capture and store metal ions directly thereon, wherein the cathode current collector has a specific surface area greater than 100 m2/g that is in direct contact with said electrolyte; (c) a porous anode current collector having surface areas to capture and store metal ions thereon, wherein the anode current collector has a specific surface area greater than 100 m2/g that is in direct contact with the electrolyte; (d) a porous separator disposed between the anode and the cathode; and (e) an ion source of the first metal disposed in the anode current collector or the cathode current collector and in electronic contact therewith to obtain an open circuit voltage (OCV) from 0.3 volts to 3.5 volts when the cell is made.

Abstract: An apparatus is provided for synthesizing a film on a substrate in a reactor that defines an outer reaction space. The apparatus comprises a vessel body and one or more vessel closures. The one or more vessel closures are adapted to be removably attached to the vessel body to form a reaction vessel therewith. The reaction vessel: i) comprises graphite; ii) defines an inner reaction space adapted to contain the substrate; iii) is adapted to be placed within the outer reaction space; and iv) is adapted to allow gas outside the reaction vessel to enter the inner reaction space.

Abstract: A semiconductor device includes a field-effect transistor (FET), and a fuse which includes a graphene layer and is electrically connected to the FET.