Fullerenes (i.e., Graphene-based Structures, Such As Nanohorns, Nanococoons, Nanoscrolls, Etc.) Or Fullerene-like Structures (e.g., Ws2 Or Mos2 Chalcogenide Nanotubes, Planar C3n4, Etc.) Patents (Class 977/734)
Cross-Reference Art Collections
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Patent number: 8940453Abstract: An electrode catalyst for a fuel cell includes a complex support including at least one metal oxide and carbon-based material; and a palladium (Pd)-based catalyst supported by the complex support. A method of manufacturing the electrode catalyst includes dissolving a precursor of a palladium (Pd)-based catalyst in a solvent and preparing a mixture solution for a catalyst; adding a complex support including at least one metal oxide and a carbon-based material to the mixture solution for a catalyst and stirring the mixture solution to which the complex support is added; drying the mixture solution for a catalyst, to which the complex support is added, in order to disperse the precursor of the Pd-based catalyst on the complex support; and reducing the precursor of the Pd-based catalyst dispersed on the complex support. A fuel cell includes the electrode catalyst.Type: GrantFiled: December 9, 2010Date of Patent: January 27, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Seon-ah Jin, Chan-ho Pak, Kyung-jung Kwon, Kang-hee Lee, Dae-jong Yoo, Jong-won Lee
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Patent number: 8940444Abstract: Hybrid radical energy storage devices, such as batteries or electrochemical devices, and methods of use and making are disclosed. Also described herein are electrodes and electrolytes useful in energy storage devices, for example, radical polymer cathode materials and electrolytes for use in organic radical batteries.Type: GrantFiled: May 21, 2012Date of Patent: January 27, 2015Assignee: Alliance for Sustainable Energy, LLCInventors: Thomas Gennett, David S. Ginley, Wade Braunecker, Chunmei Ban, Zbyslaw Owczarczyk
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Patent number: 8940244Abstract: The present invention relates to hierarchical structured nanotubes, to a method for preparing the same and to an application for the same, wherein the nanotubes include a plurality of connecting nanotubes for constituting a three-dimensional multi-dendrite morphology; and the method includes the following steps: (A) providing a polymer template including a plurality of organic nanowires; (B) forming an inorganic layer on the surface of the organic nanowires in the polymer template; and (C) performing a heat treatment on the polymer template having the inorganic layer on the surface so that partial atoms of the organic nanowires enter the inorganic layer.Type: GrantFiled: December 17, 2012Date of Patent: January 27, 2015Assignee: National Tsing Hua UniversityInventors: Hsueh-Shih Chen, Po-Hsun Chen, Jeng Liang Kuo, Tsong-Pyng Perng
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Patent number: 8936681Abstract: A method for making an epitaxial structure is provided. The method includes the following steps. A substrate is provided. The substrate has an epitaxial growth surface for growing epitaxial layer. A carbon nanotube layer is placed on the epitaxial growth surface. An epitaxial layer is epitaxially grown on the epitaxial growth surface. The carbon nanotube layer is removed. The carbon nanotube layer can be removed by heating.Type: GrantFiled: October 18, 2011Date of Patent: January 20, 2015Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Yang Wei, Shou-Shan Fan
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Patent number: 8932904Abstract: A semiconductor device including a graphene layer and a method of manufacturing the same are disclosed. A method in which graphene is grown on a catalyst metal by a chemical vapor deposition or the like is known. However, the graphene cannot be used as a channel, since the graphene is in contact with the catalyst metal, which is conductive. There is disclosed a method in which a catalyst film (2) is formed over a substrate (1), a graphene layer (3) is grown originating from the catalyst film (2), an electrode (4) in contact with the graphene layer (3) is formed, and the catalyst film (2) is removed.Type: GrantFiled: April 23, 2012Date of Patent: January 13, 2015Assignee: Fujitsu LimitedInventors: Daiyu Kondo, Shintaro Sato
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Patent number: 8932941Abstract: The method of manufacturing a graphene device includes forming an insulating material layer on a substrate, forming first and second metal pads on the insulating material layer spaced apart from each other, forming a graphene layer having a portion defined as an active area between the first and second metal pads on the insulating material layer, forming third and fourth metal pads on the graphene layer spaced apart from each other with the active area therebetween, the third and fourth metal pads extending above the first metal pad and the second metal pad, respectively, forming a first protection layer to cover all the first and second metal pads, the graphene layer, and the third and fourth metal pads, and etching an entire surface of the first protection layer until only a residual layer made of a material for forming the first protection layer remains on the active area.Type: GrantFiled: April 3, 2013Date of Patent: January 13, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Joo-ho Lee, Tae-han Jeon, Yong-sung Kim, Chang-seung Lee, Yong-seok Jung
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Publication number: 20150010714Abstract: A method of preparing graphene on a SiC substrate includes bombarding a surface of the SiC substrate with ions and annealing a volume of the SiC substrate at the bombarded surface to promote agglomeration of carbon at the bombarded surface to form one or more layers of graphene at that surface. The ions can be Si, C, or other ions such as Au. The annealing can be carried out using a thermal source of heating or by irradiation with at least one laser beam or other high energy beam.Type: ApplicationFiled: August 23, 2012Publication date: January 8, 2015Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.Inventors: Bill R. Appleton, Brent Paul Gila, Sefaattin Tongay, Maxime G. Lemaitre
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Patent number: 8926853Abstract: Aspects of the invention are directed to a method of forming graphene structures. Initially, a cluster of particles is received. The cluster of particles comprises a plurality of particles with each particle in the plurality of particles contacting one or more other particles in the plurality of particles. Subsequently, one or more layers are deposited on the cluster of particles with the one or more layers comprising graphene. The plurality of particles are then etched away without substantially etching the deposited one or more layers. Lastly, the remaining one or more layers are dried. The resultant graphene structures are particularly resistant to the negative effects of aggregation and compaction.Type: GrantFiled: August 23, 2012Date of Patent: January 6, 2015Inventors: Xin Zhao, Yu-Ming Lin
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Patent number: 8925736Abstract: The disclosed subject matter provides a filter that is modified by a polymer-carbon based nanomaterial nanocomposite intended to significantly enhance the performance of filtration, separation, and remediation of a broad variety of chemicals, heavy metal ions, organic matters, and living organisms. Polymeric materials, such as but not limited to poly-N-vinyl carbazole (PVK), are combined with (1) graphene (G) and/or graphene-like materials based nanomaterials and (2) graphene oxide (GO) chemically modified with a chelating agent such as but not limited to EDTA. The nanocomposite is homogenously deposited on the surface of the membrane.Type: GrantFiled: September 10, 2012Date of Patent: January 6, 2015Assignee: University of HoustonInventors: Debora F. Rodrigues, Rigoberto C. Advincula, Fritz Claydon, Catherine M. Santos, Maria Celeste R. Tria
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Patent number: 8920739Abstract: Disclosed is a system or method of increased efficiency in carbon nanomaterial synthesis. In one embodiment, a system or method of automated collection of deposited carbon nanomaterial is disclosed. According to one or more embodiments, a method of automated collection of deposited nanomaterial may comprise using cleaner blades to clean the wall of a deposition chamber and the surface of a central body where carbon nanomaterial has been deposited. The method of automated carbon nanomaterial collection may be used in connection with a method of carbon nanomaterial synthesis, to create a more efficient synthesis process.Type: GrantFiled: June 6, 2011Date of Patent: December 30, 2014Assignee: King Abddulaziz City for Science and TechnologyInventors: Turki Saud Mohammed Al-Saud, Mohammed A. Bin Hussain, Siarhei Alexandrovich Zhdanok, Andrei Vladimirovich Krauklis, Petr Petrovich Samtsou, Anatolij Ivanovich Loznikov
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Publication number: 20140376156Abstract: An apparatus having reduced phononic coupling between a graphene monolayer and a substrate is provided. The apparatus includes an aerogel substrate and a monolayer of graphene coupled to the aerogel substrate.Type: ApplicationFiled: September 8, 2014Publication date: December 25, 2014Applicant: Elwha LLCInventors: Alistair K. Chan, Geoffrey F. Deane, Roderick A. Hyde, Jeffrey A. Bowers, Nathan Kundtz, Nathan P. Myhrvold, David R. Smith, Lowell L. Wood,, Jr.
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Publication number: 20140364712Abstract: Devices and methods relate to inducing or promoting hemostasis. The hemostasis device may include a support layer having a first surface and an opposing second surface. The device may include a layer, the layer disposed on the first surface. The layer may include a target surface configured to contact a target site. The layer may include a monolayer of about 100% graphene or may include laser-reduced graphene oxide. The device may include a sensor configured to measure a level of hemostasis of the target site. The methods relate to a method of manufacturing a hemostatic device including a monolayer of graphene or a layer of laser-reduced graphene oxide.Type: ApplicationFiled: March 4, 2013Publication date: December 11, 2014Applicant: EMORY UNIVERSITYInventors: Wilbur A. Lam, Anton Sidorov, Zhigang JIang
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Patent number: 8907320Abstract: An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance.Type: GrantFiled: January 31, 2013Date of Patent: December 9, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Sung-Won Hwang, Geun-Woo Ko, Sung-Hyun Sim, Jung-Sub Kim, Hun-Jae Chung, Cheol-Soo Sone
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Patent number: 8907323Abstract: A thermoelectric element comprises a substrate with a patterned discontinuous fullerene thin film. A method of applying a patterned discontinuous fullerene thin film to a substrate comprises applying a mask to the substrate, the mask defining a conductive electric network, applying a fullerene material to the masked substrate to deposit a patterned discontinuous fullerene thin film, applying a selected bond breaking force to the network to disassociate fullerene carbon to fullerene carbon bonds without disassociating fullerene carbon to substrate bonds to form a patterned discontinuous fullerene thin film substantially a single fullerene molecule in thickness.Type: GrantFiled: May 4, 2006Date of Patent: December 9, 2014Inventor: Philip D. Freedman
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Patent number: 8907080Abstract: Provided is a complex comprising a hydrophobic cluster compound and a ?-1,3-1,6-D-glucan having a degree of branching (a ratio of ?-1,6 linkages to ?-1,3 linkages) of 50 to 100%.Type: GrantFiled: November 26, 2010Date of Patent: December 9, 2014Assignees: Daiso Co., Ltd., Osaka City University, Osaka Prefecture University Public Corporation, Kyoto Prefectural Public University Corporation, National University Corporation Nara Institute of Science and TechnologyInventors: Toshio Suzuki, Hideaki Ueda, Takeshi Nagasaki, Mitsunori Kirihata, Munenori Numata, Atsushi Ikeda
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Publication number: 20140353554Abstract: An oligophenylene monomer of general formula (I) wherein R1 and R2 are independently of each other H, halogene, —OH, —NH2, —CN, —NO2 or a linear or branched, saturated or unsaturated C1-C40 hydrocarbon residue, which can be substituted 1- to 5-fold with halogene (F, Cl, Br, I), —OH, —NH2, —CN and/or —NO2, and wherein one or more CH2-groups can be replaced by —O— or —S—, or an optionally substituted aryl, alkylaryl or alkoxyaryl residue; and m represents 0, 1 or 2.Type: ApplicationFiled: December 17, 2012Publication date: December 4, 2014Applicants: BASF SE, Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.Inventors: Matthias Georg Schwab, Akimitsu Narita, Xinliang Feng, Klaus Muellen
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Publication number: 20140356277Abstract: Methods for converting graphite oxide into graphene by exposure to electromagnetic radiation are described. As an example, graphene oxide may be rapidly converted into graphene upon exposure to converged sunlight.Type: ApplicationFiled: August 14, 2014Publication date: December 4, 2014Inventors: Ramaprabhu SUNDARA, Eswaraiah VARRLA, Jyothirmayee Aravind SASIDHARANNAIR SASIKALADEVI
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Patent number: 8894887Abstract: Photovoltaic cells comprising an active layer comprising, as p-type material, conjugated polymers such as polythiophene and regioregular polythiophene, and as n-type material at least one fullerene derivative. The fullerene derivative can be C60, C70, or C84. The fullerene also can be functionalized with indene groups. Improved efficiency can be achieved.Type: GrantFiled: April 10, 2013Date of Patent: November 25, 2014Assignees: Solvay USA, Inc., Nano-C, Inc.Inventors: Darin W. Laird, Reza Stegamat, Henning Richter, Victor Vejins, Lawrence T. Scott, Thomas A. Lada, II
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Patent number: 8890171Abstract: A method of fabricating a single-layer graphene on a silicon carbide (SiC) wafer includes forming a plurality of graphene layers on the SiC wafer such that the plurality of graphene layers are on a buffer layer of the SiC wafer, the buffer layer being formed of carbon; removing the plurality of graphene layers from the buffer layer; and converting the buffer layer to a single-layer graphene.Type: GrantFiled: July 9, 2013Date of Patent: November 18, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Yun-sung Woo, Seon-mi Yoon, Hyeon-jin Shin, Dong-wook Lee, Jae-young Choi
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Patent number: 8890767Abstract: Provided are an active metamaterial device operating at a high speed and a manufacturing method thereof. The active metamaterial device includes a first dielectric layer, a lower electrode disposed on the first dielectric layer, a second dielectric layer disposed on the lower electrode, metamaterial patterns disposed on the second dielectric layer, a couple layer disposed on the metamaterial patterns and the second dielectric layer, a third dielectric layer disposed on the couple layer, and an upper electrode disposed on the third dielectric layer.Type: GrantFiled: March 27, 2012Date of Patent: November 18, 2014Assignee: Electronics and Telecommunications Research InstituteInventors: Choon Gi Choi, Muhan Choi, Sung-Yool Choi
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Publication number: 20140332728Abstract: The objective of the present teaching is to provide a porous material including carbon nanohorns. The porous material includes carbon nanohorns and has a predetermined three-dimensional shape.Type: ApplicationFiled: October 19, 2012Publication date: November 13, 2014Applicant: ENVIRONMENT ENERGY NANO TECHNICAL RESEARCH INSTITUTEInventors: Tadashi Goino, Tsuzuki Kitamura
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Patent number: 8883124Abstract: Fullerenes, when irradiated with electromagnetic radiation, generate acoustic waves. A photoacoustic tomography method using a material comprising fullerenes is disclosed that includes irradiating the material with a radiation beam such as a laser. The resultant photoacoustic effect produced by the material is detected by at least one detector. A photoacoustic tomography system using a material comprising fullerenes is also described.Type: GrantFiled: October 31, 2008Date of Patent: November 11, 2014Assignee: University of Florida Research Foundation, Inc.Inventors: Vijay Krishna, Brij M. Moudgil, Benjamin L. Koopman, Stephen Grobmyer, Iwakuma Nobutaka, Qiang Wang, Qizhi Zhang, Huabei Jiang, Parvesh Sharma, Amit Kumar Singh
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Patent number: 8882872Abstract: A method of forming polycrystalline diamond includes forming metal nanoparticles having a carbon coating from an organometallic material; combining a diamond material with the metal nanoparticles having the carbon coating; and processing the diamond material and the metal nanoparticles having the carbon coating to form the polycrystalline diamond. Processing includes catalyzing formation of the polycrystalline diamond by the metal nanoparticles; and forming interparticle bonds that bridge the diamond material by carbon from the carbon coating.Type: GrantFiled: October 4, 2011Date of Patent: November 11, 2014Assignee: Baker Hughes IncorporatedInventors: Oleg A. Mazyar, Michael H. Johnson, Anthony A. DiGiovanni, Dan E. Scott
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Publication number: 20140329076Abstract: The purpose of showing the present description is to provide a dense material containing carbon nanohorns. For this purpose, the present description shows the dense material containing carbon nanohorns and having a predetermined three-dimensional shape.Type: ApplicationFiled: October 19, 2012Publication date: November 6, 2014Applicant: ENVIRONMENT ENERGY NANO TECHNICAL RESEARCH INSTITUTEInventors: Tadashi Goino, Tsuzuki Kitamura
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Patent number: 8876944Abstract: A system for separating fluids of a fluid mixture including a filter element operatively arranged for enabling a first component of a fluid mixture to flow therethrough while impeding flow of at least one other fluid component of the fluid mixture. An additive is configured to improve a first affinity of the filter element for the first component relative to a second affinity of the filter element for the at least one other fluid component of the fluid mixture. A method of separating fluids is also included.Type: GrantFiled: January 13, 2012Date of Patent: November 4, 2014Assignee: Baker Hughes IncorporatedInventors: Jiaxiang Ren, David P. Gerrard, John C. Welch, James E. Goodson
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Patent number: 8878233Abstract: Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.Type: GrantFiled: October 26, 2011Date of Patent: November 4, 2014Assignee: LG Siltron Inc.Inventors: Sung-Jin An, Dong-Gun Lee, Seok-Han Kim
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Publication number: 20140319685Abstract: Hybrid metal-graphene interconnect structures and methods of forming the same. The structure may include a first end metal, a second end metal, a conductive line including one or more graphene portions extending from the first end metal to the second end metal, and one or more line barrier layers partially surrounding each of the one or more graphene portions. The conductive line may further include one or more intermediate metals separating each of the one or more graphene portions. Methods of forming said interconnect structures may include forming a plurality of metals including a first end metal and a second end metal in a dielectric layer, forming one or more line trenches between each of the plurality of metals, forming a line barrier layer in each of the one or more line trenches, and filling the one or more line trenches with graphene.Type: ApplicationFiled: April 30, 2013Publication date: October 30, 2014Applicant: International Business Machines CorporationInventors: Junjing Bao, Griselda Bonilla, Samuel S. Choi, Ronald G. Filippi, Naftali E. Lustig, Andrew H. Simon
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Publication number: 20140315023Abstract: The present invention relates to a segmented graphene nanoribbon, comprising at least two different graphene segments covalently linked to each other, each graphene segment having a monodisperse segment width, wherein the segment width of at least one of said graphene segments is 4 nm or less and to a method for preparing it by polymerizing at least one polycyclic aromatic monomer compound and/or at least one oligo phenylene aromatic hydrocarbon monomer compound to form at least one polymer and by at least partially cyclodehydrogenating the one or more polymer.Type: ApplicationFiled: November 13, 2012Publication date: October 23, 2014Applicants: BASF SE, EMPA MATERIALS SCIENCE AND TECHNOLOGYInventors: Roman Fasel, Pascal Ruffieux, Klaus Muellen, Stephan Blankenburg, Jinming Cai, Xinliang Feng, Carlo Pignedoli, Daniele Passerone
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Patent number: 8865346Abstract: A cathode electrode of a lithium ion battery includes a cathode current collector and a cathode material layer. The cathode material layer is located on a surface of the cathode current collector. The cathode material layer includes a cathode active material. The cathode active material includes sulfur grafted poly(pyridinopyridine). The sulfur grafted poly(pyridinopyridine) includes a poly(pyridinopyridine) matrix and sulfur dispersed in the poly(pyridinopyridine) matrix. The cathode current collector includes a polymer substrate and a graphene layer located on a surface of the polymer substrate adjacent to the cathode material layer. A lithium ion battery using the cathode electrode is also disclosed.Type: GrantFiled: November 13, 2012Date of Patent: October 21, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Xiang-Ming He, Li Wang, Jian-Jun Li, Jian Gao
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Patent number: 8865577Abstract: A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, growing a buffer layer on the epitaxial growth surface; placing a graphene layer on the buffer layer; epitaxially growing an epitaxial layer on the buffer layer; and removing the substrate. The graphene layer includes a number of apertures to expose a part of the buffer layer. The epitaxial layer is grown from the exposed part of the buffer layer and through the apertures.Type: GrantFiled: November 13, 2012Date of Patent: October 21, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Yang Wei, Shou-Shan Fan
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Publication number: 20140308522Abstract: The present invention relates to a nano-graphite plate structure with N graphene layers stacked together, where N is 30 to 300. The nanometer nano-graphite structure has a tap density of 0.1 g/cm3 to 0.01 cm3, a thickness of 10 nm to 100 nm, and a lateral dimension of 1 ?m to 100 ?m. The ratio of the lateral dimension to the thickness is between 10 and 10,000. The oxygen content is less than 3 wt %, and the carbon content is larger than 95 wt %. The nano-graphite plate structure has both the excellent features of the graphene and the original advantages of easy processability of the natural graphite so as to be broadly used in various application fields.Type: ApplicationFiled: April 12, 2013Publication date: October 16, 2014Applicant: Enerage Inc.Inventors: Mark Y. WU, Cheng-Yu HSIEH, Geng-Wei LIN, Ping-Yun YEH
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Publication number: 20140306335Abstract: An electronic device including a printed circuit board (PCB) including a thermal conduction plane and at least one heat generating component mounted on the PCB and connected to the thermal conduction plane. A frame is connected to the PCB so as to define a first thermally conductive path between at least a portion of the frame and the at least one heat generating component. The electronic device further includes at least one thermally conductive layer between the frame and the at least one heat generating component so as to define a second thermally conductive path between at least a portion of the frame and the at least one heat generating component.Type: ApplicationFiled: May 29, 2013Publication date: October 16, 2014Applicant: Western Digital Technologies, Inc.Inventors: RICHARD A. MATAYA, TEGAN CAMPBELL
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Patent number: 8859402Abstract: A method for making epitaxial structure is provided. The method includes providing a substrate having an epitaxial growth surface, patterning the epitaxial growth surface; placing a graphene layer on the patterned epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. The graphene layer includes a number of apertures to expose a part of the patterned epitaxial growth surface. The epitaxial layer is grown from the exposed part of the patterned epitaxial growth surface and through the aperture.Type: GrantFiled: December 13, 2012Date of Patent: October 14, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Yang Wei, Shou-Shan Fan
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Publication number: 20140302296Abstract: Inks for the formation of transparent conductive films are described that comprise an aqueous or alcohol based solvent, carbon nanotubes as well as suitable dopants. Suitable dopants generally comprise halogenated ionic dopants. In some embodiment, the inks comprise sulfonated dispersants that can effectively provide additional doping to improve electrical conductivity as well as stabilize the inks with respect to settling and/or improve the fluid properties of the inks for certain processing approaches. The inks can be processed into films with desirable levels of electrical conductivity and optical transparency.Type: ApplicationFiled: September 24, 2012Publication date: October 9, 2014Applicant: C3NANO INC.Inventors: Melburne C. LeMieux, Ajay Virkar, Yung-Yu Huang
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Patent number: 8853061Abstract: A method for forming a graphite-based device on a substrate having a plurality of zones is provided where the substrate is carbon doped in zones. Each such zone comprises a plurality of dopant profiles. One or more graphene stacks are generated in the doped zones. A graphene stack so generated comprises a non-planar graphene layer characterized by a bending angle, curvature, characteristic dimension, graphene orientation, graphene type, or combinations thereof. A method for forming a graphite-based device on a substrate is provided, the substrate comprising a graphene foundation material and a plurality of zones. The substrate is patterned to form features in the zones. One feature comprises a non-planar surface or at least two adjacent surfaces that are not coplanar. One or more graphene stacks are concurrently generated, at least one of which comprises a non-planar graphene layer overlaying the non-planar surface or the at least two adjacent surfaces.Type: GrantFiled: July 24, 2013Date of Patent: October 7, 2014Assignee: Solan, LLCInventor: Mark Alan Davis
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Patent number: 8853347Abstract: An organic semiconductor compound may include a structural unit represented by the aforementioned Chemical Formula 1 and an organic thin film and an electronic device may include the organic semiconductor compound.Type: GrantFiled: August 8, 2012Date of Patent: October 7, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Jeong il Park, Bang Lin Lee, Jong Won Chung
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Patent number: 8840803Abstract: A nanocomposite fluid includes a fluid medium; and a nanoparticle composition comprising nanoparticles which are electrically insulating and thermally conductive. A method of making the nanocomposite fluid includes forming boron nitride nanoparticles; dispersing the boron nitride nanoparticles in a solvent; combining the boron nitride nanoparticles and a fluid medium; and removing the solvent.Type: GrantFiled: February 2, 2012Date of Patent: September 23, 2014Assignee: Baker Hughes IncorporatedInventors: Oleg A. Mazyar, Ashley Leonard, Joshua C. Falkner
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Patent number: 8840954Abstract: Provided is a transparent carbon nanotube (CNT) electrode comprising a net-like (i.e., net-shaped) CNT thin film and a method for preparing the same. More specifically, a transparent CNT electrode comprises a transparent substrate and a net-shaped CNT thin film formed on the transparent substrate, and a method for preparing a transparent CNT electrode, comprising forming a thin film using particulate materials and CNTs, and then removing the particulate materials to form a net-shaped CNT thin film. The transparent CNT electrode exhibits excellent electrical conductivity while maintaining high light transmittance. Therefore, the transparent CNT electrode can be widely used to fabricate a variety of electronic devices, including image sensors, solar cells, liquid crystal displays, organic electroluminescence (EL) displays, and touch screen panels, that have need of electrodes possessing both light transmission properties and conductive properties.Type: GrantFiled: August 15, 2011Date of Patent: September 23, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Dong Kee Yi, Seon Mi Yoon, Jae Young Choi, O Ok Park, Mun Ho Kim, Hong Kyoon Choi
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Patent number: 8841650Abstract: An electronic structure modulation transistor having two gates separated from a channel by corresponding dielectric layers, wherein the channel is formed of a material having an electronic structure that is modified by an electric field across the channel.Type: GrantFiled: February 23, 2010Date of Patent: September 23, 2014Assignee: Cornell UniversityInventor: Hassan Raza
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Publication number: 20140266374Abstract: Disclosed is a fractional order capacitor comprising a dielectric nanocomposite layer of thickness t, comprising a first side, and a second side opposite the first side, a first electrode layer coupled to the first side of the dielectric nanocomposite layer, a second electrode layer coupled to the second side of the dielectric nanocomposite layer, a complex impedance phase angle dependent on at least a material weight percentage of filler material in a dielectric nanocomposite layer.Type: ApplicationFiled: March 6, 2014Publication date: September 18, 2014Applicant: SAUDI BASIC INDUSTRIES CORPORATIONInventors: Mahmoud N. Almadhoun, Amro Elshurafa, Khaled Salama, Husam Alshareef
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Publication number: 20140273361Abstract: Methods of fabricating patterned substrates, including patterned graphene substrates, using etch masks formed from self-assembled block copolymer films are provided. Some embodiments of the methods are based on block copolymer (BCP) lithography in combination with graphoepitaxy. Some embodiments of the methods are based on BCP lithography techniques that utilize hybrid organic/inorganic etch masks derived from BCP templates. Also provided are field effect transistors incorporating graphene nanoribbon arrays as the conducting channel and methods for fabricating such transistors.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Applicant: Wisconsin Alumni Research FoundationInventors: Michael S. Arnold, Padma Gopalan, Nathaniel S. Safron, Myungwoong Kim, Jonathan Woosun Choi
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Patent number: 8835126Abstract: Tritiated planar carbon forms and their production are provided. Methods are provided for the stoichiometrically controlled labeling of planar carbon forms capitalizing on normal flaws of carboxylic acids ubiquitously present in commercial preparations of these planar carbon forms. Alternative methods include generation of a metallated intermediate whereby a metal is substituted for hydrogen on the carbon backbone of a planar carbon form. The metalized intermediate is then reacted with a tritium donor to covalently label the planar carbon form. The tritiated planar carbon forms produced are useful, for example, for determination of a biological property or environmental fate of planar carbon forms.Type: GrantFiled: June 15, 2011Date of Patent: September 16, 2014Assignee: PerkinElmer Health Sciences, Inc.Inventor: Crist N. Filer
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Patent number: 8835686Abstract: A method, an apparatus and an article of manufacture for attracting charged nanoparticles using a graphene nanomesh. The method includes creating a graphene nanomesh by generating multiple holes in graphene, wherein each of the multiple holes is of a size appropriate to a targeted charged nanoparticle, selectively passivating the multiple holes of the graphene nanomesh to form a charged ring in the graphene nanomesh by treating the graphene nanomesh with chemistry yielding a trap with an opposite charge to that of the targeted nanoparticle, and electrostatically attracting the target charged nanoparticle to the oppositely charged ring to facilitate docking of the charged nanoparticle to the graphene nanomesh.Type: GrantFiled: November 22, 2011Date of Patent: September 16, 2014Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Ahmed Maarouf, Glenn J. Martyna
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Patent number: 8834967Abstract: A method of reducing the diameter of pores formed in a graphene sheet includes forming at least one pore having a first diameter in the graphene sheet such that the at least one pore is surrounded by passivated edges of the graphene sheet. The method further includes chemically reacting the passivated edges with a chemical compound. The method further includes forming a molecular brush at the passivated edges in response to the chemical reaction to define a second diameter that is less than the initial diameter of the at least one pore.Type: GrantFiled: August 14, 2013Date of Patent: September 16, 2014Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Ahmed A. Maarouf, Glenn J. Martyna
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Patent number: 8837110Abstract: An apparatus having reduced phononic coupling between a graphene monolayer and a substrate is provided. The apparatus includes an aerogel substrate and a monolayer of graphene coupled to the aerogel substrate.Type: GrantFiled: July 17, 2013Date of Patent: September 16, 2014Assignee: Elwha LLCInventors: Jeffrey A. Bowers, Alistair K. Chan, Geoffrey F. Deane, Nathan Kundtz, Nathan P. Myhrvold, David R. Smith, Lowell L. Wood, Jr., Roderick A. Hyde
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Patent number: 8835899Abstract: A graphene electronic device and a method of fabricating the graphene electronic device are provided. The graphene electronic device may include a graphene channel layer formed on a hydrophobic polymer layer, and a passivation layer formed on the graphene channel layer. The hydrophobic polymer layer may prevent or reduce adsorption of impurities to transferred graphene, and a passivation layer may also prevent or reduce adsorption of impurities to a heat-treated graphene channel layer.Type: GrantFiled: August 2, 2013Date of Patent: September 16, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: Hee-jun Yang, Sun-ae Seo, Sung-hoon Lee, Hyun-jong Chung, Jin-seong Heo
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Publication number: 20140251434Abstract: Photovoltaic cells comprising an active layer comprising, as p-type material, conjugated polymers such as polythiophene and regioregular polythiophene, and as n-type material at least one fullerene derivative. The fullerene derivative can be C60, C70, or C84. The fullerene also can be functionalized with indene groups. Improved efficiency can be achieved.Type: ApplicationFiled: February 19, 2014Publication date: September 11, 2014Applicants: Plextronics, Inc., Nano-C, Inc.Inventors: Darin W. LAIRD, Reza STEGAMAT, Henning RICHTER, Viktor VEJINS, Lawrence T. SCOTT, Thomas A. LADA, II
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Patent number: 8830653Abstract: An apparatus having reduced phononic coupling between a graphene monolayer and a substrate is provided. The apparatus includes an aerogel substrate and a monolayer of graphene coupled to the aerogel substrate.Type: GrantFiled: August 27, 2013Date of Patent: September 9, 2014Assignee: Elwha LLCInventors: Jeffrey A. Bowers, Alistair K. Chan, Geoffrey F. Deane, Roderick A. Hyde, Nathan Kundtz, Nathan P. Myhrvold, David R. Smith, Lowell L. Wood, Jr.
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Patent number: 8828211Abstract: The invention features the use of graphene, a one atom thick planar sheet of bonded carbon atoms, in the formation of artificial lipid membranes. The invention also features the use of these membranes to detect the properties of polymers (e.g., the sequence of a nucleic acid) and identify transmembrane protein-interacting compounds.Type: GrantFiled: June 8, 2011Date of Patent: September 9, 2014Assignee: President and Fellows of Harvard CollegeInventors: Slaven Garaj, Daniel Branton
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Patent number: 8828276Abstract: According to one embodiment, metal nanoparticle dispersion includes organic solvent, and metal-containing particles dispersed in the organic solvent. The metal-containing particles include first metal nanoparticles and second metal nanoparticles. Each of the first metal nanoparticles has a high-molecular compound on at least part of a surface thereof. Each of the second metal nanoparticles has a low-molecular compound on at least part of a surface thereof. A total amount of the low-molecular compound on all of the second nanoparticles includes an amount of a primary amine as the low-molecular compound.Type: GrantFiled: March 7, 2011Date of Patent: September 9, 2014Assignees: Kabushiki Kaisha Toshiba, Toshiba Tec Kabushiki KaishaInventor: Yasuyuki Hotta