Abstract: An extended cavity surface emitting laser has a first laser die with a first cavity and a first gain element and a second laser die with a second cavity and a second gain element. The first and second gain elements are in series to provide optical gain and optical feedback in an extended optical cavity configuration. The first and second gain elements provide optical gain and optical feedback in a common extended cavity with the first and second gain elements operating serially as a common extended cavity optical mode.

Abstract: A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1×108 cm?2 to be formed. In an embodiment of the present invention, a delta doped layer is disposed on a dopant segregation barrier in order to confine delta dopant within the delta doped layer and suppress delta dopant surface segregation.

Abstract: Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide oxynitride film may be structured as one or more monolayers. Metal electrodes may be disposed on a dielectric containing a hafnium lanthanide oxynitride film.

Abstract: A circuit board assembly includes a circuit board having an outer surface that is configured with a plurality of discrete electrical components that are each manufactured independently of one another. The circuit board assembly further includes a first protective dielectric layer overlying the outer surface, and a second dielectric layer overlying the first protective dielectric layer and the discrete electrical components. The second dielectric layer includes a dielectric material having modulus of elasticity less than 3.5 Giga-Pascal (GPa), a dielectric constant less than 3.0, a dielectric loss less than 0.008, a moisture absorption less than 0.04 percent, a breakdown voltage strength in excess of 2 million volts/centimeter (MV/cm), a temperature stability to 300° Celsius, pinhole free in films greater than 50 Angstroms, hydrophobic with a wetting angle greater than 45 degrees, capable of being deposited conformally over and under 3D structures with thickness uniformity less than or equal to 30%.

Abstract: An evacuated container assembly suitable for use in connection with blood collection including: (a) a container member formed of a first polymeric material and having a sidewall and one or more openings; (b) a nanocomposite barrier coating disposed on the container member having a thickness of up to about 30 microns and being derived from an aqueous dispersion including (i) a dispersed barrier matrix polymer; and (ii) a substantially exfoliated silicate filler having an aspect ratio of more than 50; and (c) one or more sealing members disposed in the opening(s) operative to hermetically seal the cavity; wherein the cavity is evacuated and maintains a pressure below atmospheric pressure and exhibits a draw volume loss lower than that of a like assembly without a nanocomposite barrier film by a factor of at least 1.5.

Abstract: A quantum well device and a method for manufacturing the same are disclosed. In one aspect, the device includes a quantum well region overlying a substrate, a gate region overlying a portion of the quantum well region, a source and drain region adjacent to the gate region. The quantum well region includes a buffer structure overlying the substrate and including semiconductor material having a first band gap, a channel structure overlying the buffer structure including a semiconductor material having a second band gap, and a barrier layer overlying the channel structure and including an un-doped semiconductor material having a third band gap. The first and third band gap are wider than the second band gap. Each of the source and drain region is self-aligned to the gate region and includes a semiconductor material having a doped region and a fourth band gap wider than the second band gap.

Abstract: A substrate-free light emitting diode (LED) including an epitaxy layer, a conductive supporting layer, and a first contact pad is provided. The epitaxy layer includes a first type doped semiconductor layer, a light emitting layer, and a second type doped semiconductor layer. The light emitting layer is disposed on the first type doped semiconductor layer, and a portion of the first type doped semiconductor layer is exposed. The second type doped semiconductor layer and the conductive supporting layer are sequentially disposed on the second type doped semiconductor layer. The first contact pad is disposed on the exposed first type doped semiconductor layer and electrically connected thereto. The first contact pad and the conductive supporting layer serving as an electrode are disposed on the same side of the epitaxy layer to avoid the light shielding effects of the electrode to improve the front light emitting efficiency of the LED.

Abstract: Light extraction efficiency of a semiconductor light-emitting element is improved. A buffer layer, an n-type GaN layer, an InGaN emission layer, and a p-type GaN layer are laminated on a sapphire substrate in a semiconductor light-emitting element. A ZnO layer functioning as a transparent electrode is provided on the p-type GaN layer and concave portions are formed on a surface of the ZnO layer at two-dimensional periodic intervals. If a wavelength of light from the InGaN emission layer in the air is ?, an index of refraction of the ZnO layer at the wavelength ? is nz?, and a total reflection angle at an interface between the ZnO layer and a medium in contact therewith is ?z, a periodic interval Lz between adjacent concave portions is set in a range of ?/nz??Lz??/(nz?X(1?sin ?z)).

Abstract: A nonwoven web of fibers that have a number average diameter of less than 1 micron. The web can have a Poisson Ratio of less than about 0.8, a solidity of at least about 20%, a basis weight of at least about 1 gsm, and a thickness of at least 1 micrometer.

Abstract: Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microdisk comprises: a top layer; a bottom layer; an intermediate layer having at least one quantum well, the intermediate layer sandwiched between the top layer and the bottom layer; a peripheral annular region including at least a portion of the top, intermediate, and bottom layers; and a current isolation region configured to occupy at least a portion of a central region of the microdisk including at least a portion of the top, intermediate, and bottom layers and having relatively lower index of refraction than the peripheral annular region.

Abstract: A yellow Light Emitting Diode (LED) with a peak emission wavelength in the range 560-580 nm is disclosed. The LED is grown on one or more III-nitride-based semipolar planes and an active layer of the LED is composed of indium (In) containing single or multi-quantum well structures. The LED quantum wells have a thickness in the range 2-7 nm. A multi-color LED or white LED comprised of at least one semipolar yellow LED is also disclosed.

Abstract: Disclosed are a light emitting device. The light emitting device includes a first conductive semiconductor layer, a light emitting layer, a protective layer, a nano-layer and a second conductive semiconductor layer. The light emitting layer is formed on the first conductive semiconductor layer. The protective layer is formed on the light emitting layer. The nano-layer is formed on the protective layer. The second conductive semiconductor layer is formed on the nano-layer.

Abstract: Photonic integrated circuits on silicon are disclosed. By bonding a wafer of compound semiconductor material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. A silicon laser intermixed integrated device in accordance with one or more embodiments of the present invention comprises a silicon-on-insulator substrate, comprising at least one waveguide in a top surface, and a compound semiconductor substrate comprising a gain layer, the compound semiconductor substrate being subjected to a quantum well intermixing process, wherein the upper surface of the compound semiconductor substrate is bonded to the top surface of the silicon-on-insulator substrate.

Abstract: The invention relates to a method for detecting and/or qualifying nanoparticles whose mean size is less than 60 nm, which exhibit a plasmon resonance and are located on the top surface of a flat solid support. A device for carrying out the inventive method and the use thereof are also disclosed.

Abstract: A conductor for a flexible substrate, used for a flexible flat cable or disposed inside a flexible printed-circuit board, according to the present invention comprises: a base conductor made of Cu or Cu-alloy; a plating film made of Sn or Sn-alloy formed on a surface of the base conductor; and a surface oxide film formed on a surface of the plating film, in which the surface oxide film includes oxide of an element other than Sn or a mixture of Sn oxide and oxide of an element other than Sn.

Abstract: A novel nanocarbon composite structure is provided having trapped ruthenium oxide. By using Ketjen black, and through chemical-mechanical effect utilizing an ultracentrifugal reaction field, both the specific surface area of ruthenium oxide and space of electrode material are expanded to have nanoparticles of ruthenium oxide highly dispersed in a graphene layer. This nanocarbon composite structure having trapped ruthenium oxide exhibits high electrochemical activity and is suitable for use as an electrical energy storing device, such as a large-capacity capacitor.

Abstract: Conventional electrospinning was problematic in that it is incapable of making a continuous filament (yarn) by a simple and continuous process. To solve the above problem, there is provided a method for making a continuous filament consisting of nanofibers according to the present invention, wherein a polymer spinning liquid is electrostatically spun to a collector 7 through nozzles 5 to obtain a nanofiber web 17a of ribbon form, then the nanofiber web 17a is passed through an air twister 18 and twisted to obtain a nanofiber filament 17b of a continuous filament form, and then the nanofiber filament 17b is drawn.

Abstract: Disclosed is a nano-composite material comprising fully separated nano-scaled graphene platelets (NGPs) dispersed in a matrix material, wherein each of the platelets comprises a sheet of graphite plane or multiple sheets of graphite plane and has a thickness no greater than 100 nm and the platelets have an average length, width, or diameter no greater than 500 nm. The graphene plates are present in an amount no less than 15% by weight based on the total weight of the platelets and the matrix material combined. Typically, the nanocomposite is electrically conductive with a bulk conductivity no less than 10 S/cm and more typically no less than 100 S/cm. Highly conductive NGP nanocomposites are particularly useful for fuel cell flow field plate (bipolar plate) and battery electrode applications. Nanocomposites with high NGP proportions can be used in automotive friction plates and aircraft brake components.

Abstract: The invention discloses new and advantageous uses for carbon/graphene nanoribbons (GNRs), which includes, but is not limited to, electronic components for integrated circuits such as NOT gates, OR gates, AND gates, nano-capacitors, and other transistors. More specifically, the manipulation of the shapes, sizes, patterns, and edges, including doping profiles, of GNRs to optimize their use in various electronic devices is disclosed.

Abstract: This invention provides a hybrid nano-filament composition for use as an electrochemical cell electrode. The composition comprises: (a) an aggregate of nanometer-scaled, electrically conductive filaments that are substantially interconnected, intersected, or percolated to form a porous, electrically conductive filament network comprising substantially interconnected pores, wherein the filaments have an elongate dimension and a first transverse dimension with the first transverse dimension being less than 500 nm (preferably less than 100 nm) and an aspect ratio of the elongate dimension to the first transverse dimension greater than 10; and (b) micron- or nanometer-scaled coating that is deposited on a surface of the filaments, wherein the coating comprises an anode active material capable of absorbing and desorbing lithium ions and the coating has a thickness less than 20 ?m (preferably less than 1 ?m). Also provided is a lithium ion battery comprising such an electrode as an anode.

Abstract: A visible wavelength vertical cavity surface emitting laser suitable for single mode operation has an oxide aperture (81, 82) for concentrating electrical current within a central axial portion (143) of the device and a surface relief feature (144, 146) at an output surface of the device selecting for substantially single lateral mode of operation. The relationship between oxide confinement structure diameter (140) and surface relief feature diameter (141) has been mapped to provide optimum conditions for single mode behaviour and define a region of that space to produce optimum device performance in the visible device operating wavelength band between 630 nm and 690 nm.

Abstract: A tubular or spherical nanostructure composed of a plurality of peptides, wherein each of the plurality of peptides includes no more than 4 amino acids and whereas at least one of the 4 amino acids is an aromatic amino acid.

Abstract: A drive circuit and method of controlling a quantum well modulator are disclosed. The drive circuit can be disposed in an optical transceiver having a quantum well modulator configured to retro-modulate an incoming optical signal. The drive circuit can include separate modulating and bias voltage sources. A level of the modulating voltage and the bias voltage can be determined based on an ambient temperature of the optical transceiver and can be adjusted to compensate for variations in the optical performance of the quantum well modulator. The quantum well modulator can be controlled in intervals. The modulating voltage can be applied to the quantum well modulator during a first interval. A current associated with the modulating voltage can be returned to the modulation voltage source during a second interval. A timing of the first and second intervals can be based on electrical properties of the quantum well modulator.

Abstract: A substrate for promoting growth of chondrocytes to repair articular cartilage is disclosed. The substrate comprises a polymeric material comprising aligned and nano-sized surface structures. An associated method is disclosed.

Abstract: A nanotube mesh and method for forming the nanotube mesh. The nanotube mesh has a first layer and a second layer. The first layer has a first plurality of nanotubes aligned in a direction approximately parallel to each other, the first layer having a length, a width, and a thickness of at least a dimension of a single nanotube. The second layer has a second plurality of nanotubes aligned in a direction approximately parallel to each other, the second layer having a length, a width, and a thickness of at least a dimension of a single nanotube, wherein the first layer is attached to the second layer at a set of points to form the nanotube mesh.

Abstract: A layered ruthenic acid compound is converted to a protonic layered ruthenic acid hydrate, which is then converted to a layered alkylammonium-ruthenic acid intercalation compound to obtain a colloid containing ruthenic acid nanosheets having a thickness of 1 nm or smaller. Thereby, a ruthenic acid nanosheet is obtained.

Abstract: Carbon nanoflakes, methods of making the nanoflakes, and applications of the carbon nanoflakes are provided. In some embodiments, the carbon nanoflakes are carbon nanosheets, which are less than 2 nm thick. The carbon nanoflakes may be made using RF-PECVD. Carbon nanoflakes may be useful as field emitters, for hydrogen storage applications, for sensors, and as catalyst supports.

Abstract: A disk for a hard disk drive. The disk includes a first magnetic layer and a second magnetic layer. An intermediate layer consisting of cobalt and titanium is located between the first and second intermediate layers. The intermediate layer creates a finer grain size and larger crystalline anisotropy in the second magnetic layer, characteristics that are desirable when used with a perpendicular recording head.

Abstract: A layered electrocatalyst for oxidizing ammonia, ethanol, or combinations thereof, comprising: a carbon support integrated with a conductive metal; at least one first metal plating layer at least partially deposited on the carbon support, wherein the at least one first metal plating layer is active to OH adsorption and inactive to a target species, and wherein the at least one first metal plating layer has a thickness ranging from 10 nanometers to 10 microns; and at least one second metal plating layer at least partially deposited on the at least one first metal plating layer, wherein the at least one second metal plating layer is active to the target species, and wherein the at least one second metal plating layer has a thickness ranging from 10 nanometers to 10 microns, forming a layered electrocatalyst.

Abstract: The invention relates to an electroconductive textile material and method of preparation thereof. The method consists mainly of two stages: 1) special pretreatment of the fabric substrate for activation and making it suitable for subsequent application and strong attachment of a conductive coating with the use of a layer-by-layer technique (LBL); 2) subsequent application and strong attachment of a conductive coating by means of a layer-by-layer technique. The first stage may be carried out thermally, thermochemically, by treating in hot solutions, or plasma-chemically by plasma treatment. The pre-treatment may be performed, e.g., for swelling and/or for the formation of unsaturated chemical bonds or uncompensated charges in the fabric material. The pretreatment is needed to ensure more efficient penetration of chemical components into the fabric structure during subsequent LBL applications of treatment solutions that contain nano-particles and that determine the density of the molecular layer.

Abstract: Methods and devices are provided for the continuous production of a network of nanotubes or other nanoscale fibers. The method includes making a suspension of nanoscale fibers dispersed in a liquid medium, optionally with surfactant and/or sonication, and filtering the suspension by moving a filter membrane through the suspension, such that the nanoscale fibers are deposited directly on the filter membrane as the fluid medium flows through the filter membrane, thereby forming a continuous membrane of the nanoscale fibers. The deposition of the nanoscale fibers can occur when and where the filter membrane moves into contact with a static, porous filter element or a dynamic, porous filter element. The filtering can be conducted within a magnetic field effective to align the nanoscale fibers, and/or with the aid of vacuum to pull water through the filter membrane, applied pressure to press water though the filter membrane, or a combination thereof.

Abstract: The present invention provides a method of exfoliating a layered material (e.g., graphite and graphite oxide) to produce nano-scaled platelets having a thickness smaller than 100 nm, typically smaller than 10 nm. The method comprises (a) dispersing particles of graphite, graphite oxide, or a non-graphite laminar compound in a liquid medium containing therein a surfactant or dispersing agent to obtain a stable suspension or slurry; and (b) exposing the suspension or slurry to ultrasonic waves at an energy level for a sufficient length of time to produce separated nano-scaled platelets. The nano-scaled platelets are candidate reinforcement fillers for polymer nanocomposites. Nano-scaled graphene platelets are much lower-cost alternatives to carbon nano-tubes or carbon nano-fibers.

Abstract: A structure includes a film having a plurality of nanoapertures and a semiconductor layer in connection with the film. The nanoapertures are configured to allow the transmission of a predetermined subwavelength of light through the film via the plurality of nanoapertures. The semiconductor layer facilitates the modulation of the predetermined subwavelength of light transmitted through the film.

Abstract: A carbonaceous particle is provided which comprises a hexagonal flake formed of an aggregate of a plurality of nanocarbons and having a side length of 0.1 to 100 mm and a thickness of 10 nm to 1 mm. Thereby, a carbonaceous particle is provided which has an excellent electron emission performance, has a high electron conductivity, shows excellent characteristics particularly when used for a secondary battery, and can suitably be applied to various devices other than a secondary battery as well.

Abstract: Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

Abstract: Disclosed is a nano-scaled graphene article comprising a non-woven aggregate of nano-scaled graphene platelets wherein each of the platelets comprises a graphene sheet or multiple graphene sheets and the platelets have a thickness no greater than 100 nm (preferably smaller than 10 nm) and platelets contact other platelets to define a plurality of conductive pathways along the article. The article has an exceptional thermal conductivity (typically greater than 500 Wm?1K?1) and excellent electrical conductivity (typically greater than 1,000 S/cm). Thin-film articles of the present invention can be used for thermal management in micro-electronic devices and for current-dissipating on an aircraft skin against lightning strikes.

Abstract: An improved solution for producing nitride-based heterostructure(s), heterostructure device(s), integrated circuit(s) and/or Micro-Electro-Mechanical System(s) is provided. A nitride-based etch stop layer that includes Indium (In) is included in a heterostructure. An adjacent layer of the heterostructure is selectively etched to expose at least a portion of the etch stop layer. The etch stop layer also can be selectively etched. In one embodiment, the adjacent layer can be etched using reactive ion etching (RIE) and the etch stop layer is selectively etched using a wet chemical etch. In any event, the selectively etched area can be used to generate a contact or the like for a device.

Abstract: Methods of forming a gas dielectric and a related structure are disclosed. In one embodiment, the method includes providing a wiring level including at least one conductive portion within a sacrificial dielectric; forming a nanofiber layer over the wiring level; vaporizing the sacrificial dielectric by heating; evacuating the vaporized sacrificial layer; and sealing pores in the nanofiber layer.

Abstract: A method to electronically modulate the energy gap and band-structure of semiconducting carbon nanotubes is proposed. Results show that the energy gap of a semiconducting nanotube can be narrowed when the nanotube is placed in an electric field perpendicular to the tube axis. Such effect in turn causes changes in electrical conductivity and radiation absorption characteristics that can be used in applications such as switches, transistors, photodetectors and polaron generation. By applying electric fields across the nanotube at a number of locations, a corresponding number of quantum wells are formed adjacent to one another. Such configuration is useful for Bragg reflectors, lasers and quantum computing.

Abstract: A photovoltaic device utilizing a gain means and an amplification means to intake and convert incident light/photons to greater intensities of highly coherent and monochromatic photons whereby said photons are passed to a resonating means and absorption means, allowing for said photons to be absorbed with increased conversion efficiency.

Abstract: The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.

Abstract: This disclosure relates to a system and method for creating nanowires. A nanowire can be created by exposing layers of material in a superlattice and dissolving and transferring material from edges of the exposed layers onto a substrate. The nanowire can also be created by exposing layers of material in a superlattice and depositing material onto edges of the exposed layers.

Abstract: A quantum approach to the economically significant n-player public goods or similar n-player game requires only two-particle entanglement and is thus much easier to implement than games requiring n-particle entanglements. Two-particle entanglements are sufficient to give near optimal expected payoff when players use a simple mixed strategy for which no player can benefit by making different choices. This mechanism can also address some heterogeneous preferences among the players. Quantum games in accordance with the invention can be simulated on classical computers without requiring impractical amounts of processing power for large numbers of players.

Abstract: A two-layer nanotape that includes a nanoribbon substrate and an oxide that is epitaxially deposited on a flat surface of the nanoribbon substrate is described. The oxide is deposited on the substrate using a pulsed laser ablation deposition process. The nanoribbons can be made from materials such as SnO2, ZnO, MgO, Al2O3, Si, GaN, or CdS. Also, the sintered oxide target can be made from materials such as TiO2, transition metal doped TiO2 (e.g., CO0.05Ti0.95O2), BaTiO3, ZnO, transition metal doped ZnO (e.g., Mn0.1Zn0.9O and Ni0.1Zn0.9O), LaMnO3, BaTiO3, PbTiO3, YBa2Cu3Oz, or SrCu2O2 and other p-type oxides. Additionally, temperature sensitive nanoribbon/metal bilayers and their method of fabrication by thermal evaporation are described. Metals such as Cu, Au, Ti, Al, Pt, Ni and others can be deposited on top of the nanoribbon surface. Such devices bend significantly as a function of temperature and are suitable as, for example, thermally activated nanoscale actuators.

Abstract: A method of making ordered nanostructured layers comprises (a) applying an aqueous composition comprising a chromonic material to the surface of a substrate, (b) applying shear orientation to the aqueous composition, (c) non-covalently crosslinking the resulting ordered nanostructured chromonic layer with a multivalent cation salt (d) exposing the resulting crosslinked ordered nanostructured chromonic layer to an acid selected from the group consisting of carbonic acid, phosphoric acid, lactic acid, citric acid, boric acid, sulfuric acid, and mixtures thereof in the presence of water to form an ordered nanostructured barrier layer.

Abstract: A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Abstract: Disclosed are a method of fabricating ZnO nanostructures and its apparatus, and more particularly, to a method of fabricating ZnO nanostructures from Zn gas, which is produced by a reduction process between ZnO powder and graphite, on a silicon substrate, wherein various types of nanostructures are reproducibly generated by adjusting the processing temperature and the mixed ratio between oxygen and argon gases, which are introduced into the interior of a reaction tube as carrier gases, and its apparatus.

Abstract: Provided is a method of manufacturing a nano scale semiconductor device, such as a nano scale P-N junction device or a CMOS using nano particles without using a mask or a fine pattern. The method includes dispersing uniformly a plurality of nano particles on a semiconductor substrate, forming an insulating layer covering the nano particles on the semiconductor substrate, partly removing the upper surfaces of the nano particles and the insulating layer, selectively removing the nano particles from the insulating layer, and partly forming doped semiconductor layers in the semiconductor substrate by partly doping the semiconductor substrate through spaces formed by removing the nano particles.

Abstract: A method of fabricating a tunneling nanotube field effect transistor includes forming in a nanotube an n-doped region and a p-doped region which are separated by an undoped channel region of the transistor. Electrical contacts are provided for the doped regions and a gate electrode that is formed upon a gate dielectric layer deposited on at least a portion of the channel region of the transistor.

Abstract: A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.