Abstract: A slab-coupled optical waveguide laser (SCOWL) is provided that includes an upper and lower waveguide region for guiding a laser mode. The upper waveguide region is positioned in the interior regions of the SCOWL. The lower waveguide region also guides the laser mode. The lower waveguide region is positioned in an area underneath the upper waveguide region. An active region is positioned between the upper waveguide region and the lower waveguide region. The active region is arranged so etching into the SCOWL is permitted to define one or more ridge structures leaving the active region unetched.

Abstract: Methods for fabricating nanoscale array structures suitable for surface enhanced Raman scattering, structures thus obtained, and methods to characterize the nanoscale array structures suitable for surface enhanced Raman scattering. Nanoscale array structures may comprise nanotrees, nanorecesses and tapered nanopillars.

Abstract: A nano-wire optical block device for amplifying, modulating, and detecting an optical signal in a large-core hollow metallized waveguide. The nano-wire optical block device comprises a substrate with a plurality of nano-wires coupled to the substrate to form the nano-wire optical block. Each properly formed nano-wire is comprised of a p-doped region, an intrinsic region, and an n-doped region. The nano-wire optical block is operable to be inserted into the large-core hollow metallized waveguide to provide at least one of amplifying, modulating, and detecting the optical signal.

Abstract: Processes for forming full graphene wafers on silicon or silicon-on-insulator substrates. The processes comprise formation of a metal carbide layer on the substrate and annealing of the metal carbide layer under high vacuum. For volatile metals, this annealing step results in volatilization of the metal species of the metal carbide layer and reformation of the carbon atoms into the desired graphene wafer. Alternatively, for non-volatile metals, the annealing step results in migration of the metal in the metal carbide layer to the top surface of the layer, thereby forming a metal rich top layer. The desired graphene layer is formed by the carbon atoms left at the interface with the metal rich top layer. The thickness of the graphene layer is controlled by the thickness of the metal carbide layer and by solid phase reactions.

Abstract: The invention provides a novel luminescent nanosheet, and applications to that luminescent nanosheet. The invention also breaks down conventional common knowledge of nanosheet solutions to provide a nanosheet paint that makes use of a high-concentration nanosheet solution suitable for dispersion of a luminescent nanosheet or the like. The invention provides a luminescent nanosheet having perovskite octahedral crystals combined together in a planar configuration, characterized in that the octahedral crystals each have a multistacked crystal sheet structure wherein the octahedral crystals are multistacked over at least 3 high in the direction vertical to a sheet plane, and an element providing a luminescence center is solid-solubilized between the multistacked octahedral crystals (see FIG. 8).

Abstract: Disclosed is a novel method for creating local contacts in solar cells. In the method, a surface passivation that has been applied to a semiconductor substrate is locally etched away using a plasma process with the help of a thin stretched, elastic foil. If necessary, deep doping gradients are then locally created at the same points by means of a hydrogen plasma treatment with the help of thermal donors so as to increase the diffusion length of the charge carriers in the direction of the contacts. Finally, local heterostructure contacts are applied through the same mask openings. The contacts are characterized by a much lower saturation current than common diffused contacts and are therefore particularly suitable for high-performance solar cells.

Abstract: A single-crystal layer of a first semiconductor material including single-crystal nanostructures of a second semiconductor material, the nanostructures being distributed in a regular crystallographic network with a centered tetragonal prism.

Abstract: A metal matrix composite is disclosed that includes graphene nanoplatelets dispersed in a metal matrix. The composite provides for improved thermal conductivity. The composite may be formed into heat spreaders or other thermal management devices to provide improved cooling to electronic and electrical equipment and semiconductor devices.

Abstract: In a method and apparatus for transferring carbonaceous material layer, a carbonaceous material layer is grown on a growth substrate, and a first continuous conveying unit is used to feed the growth substrate and a transfer material, so that a gluing layer of the transfer material is attached to the carbonaceous material layer on the growth substrate. Then, a transformation device changes a viscosity of the gluing layer for the latter to adhere to the carbonaceous material layer. A second continuous conveying unit is further used to transfer and then separate the mutually adhered transfer material and growth substrate from each other, so that some part of the carbonaceous material layer is transferred onto the gluing layer while other part of the carbonaceous material layer remains on the growth substrate. Thus, at least a one-layer-thickness of the carbonaceous material layer is transferred.

Abstract: A method is disclosed for the induction of a suitable band gap and electron emissive properties into a substance, in which the substrate is provided with a surface structure corresponding to the interference of electron waves. Lithographic or similar techniques are used, either directly onto a metal mounted on the substrate, or onto a mold which then is used to impress the metal. In a preferred embodiment, a trench or series of nano-sized trenches are formed in the metal.

Abstract: A hybrid organic light-emitting device comprises an anode, a cathode, respective adjacent hole and electron transport layers and an emissive layer therebetween. The electron transport layer comprises a metal oxide as a result of which the cathode may be formed of a transparent conductive oxide and the anode of a high work function metal. The metal oxide used for the electron injection layer may be ZrO2: thereby the device exhibits enhanced electron injection and allows the use of a variety of red, green and blue light-emitting polymers.

Abstract: A light emitting device may include a semiconductor light emitting diode which may include a first nitride semiconductor layer doped as an n-type, a second nitride semiconductor layer doped as a p-type, and a first active layer provided between the first and second nitride semiconductor layers, and a nano light emitting diode array in which a plurality of nano light emitting diodes may be arranged on the semiconductor light emitting diode so as to be separated from each other.

Abstract: Nano-composite membranes and methods for making them are described. The nano-composite membranes a made from a layer of oriented carbon nanotubes fixed in a polymeric matrix. Methods for efficient, facile, and inexpensive fabrication of the nano-composite membranes using a filtration method are also described. The carbon nanotubes may also be modified with chemical functional groups to promote their orientation in the carbon nanotube layer or to confer to them other properties.

Abstract: Methods and apparatuses for forming carbon nanostructures from a polymer mixture. The methods include the steps of mixing the pre-formed polymer with a liquid to form a polymer mixture, freezing the polymer mixture at an effective freezing rate greater than or equal to 103 Kelvin per second to form a polymer cast within the frozen liquid, separating the polymer cast from the frozen liquid by sublimating the frozen liquid, and carbonizing the polymer cast to form a carbon nanostructure. Variations of these methods are included in the scope of the invention and produce materials with varying properties. Through control of the freezing process, the nanomorphology of the resultant structure may be modulated. Nanostructures formed according to these methods are also claimed.

Abstract: A semiconductor laser includes a laser resonator (1) having a planar active region (3), a first (2) and a second (6) wave-guide layer that define the active region (3). The resonator (1) has a shape that is defined by a perimeter, along which the first layer (2) radiation guide has a plurality of cuts (4) forming a lattice. The cuts are made as at least two adjacent slits (4a, 4b) and a zone between the slits in which an uncut portion (5a) of wave-guiding layer is present. In the case of a circular semiconductor laser, the number of cuts (4) is a prime number, or an odd number that is a multiple of a prime number, the prime number being greater than or equal to five. This way, it is avoided that resonance modes evolve outside of the zone with the cuts, or in any case with a component that is different from zero of the wave vector in a radial direction, and a pure whispering gallery operating mode is obtained, with maximum of the emitted radiation that evolves in a vertical direction, i.e.

Abstract: The invented ink-jet printing method for the construction of thin film transistors using all SWNTs on flexible plastic films is a new process. This method is more practical than all of exiting printing methods in the construction TFT and RFID tags because SWNTs have superior properties of both electrical and mechanical over organic conducting oligomers and polymers which often used for TFT. Furthermore, this method can be applied on thin films such as paper and plastic films while silicon based techniques can not used on such flexible films. These are superior to the traditional conducting polymers used in printable devices since they need no dopant and they are more stable. They could be used in conjunction with conducting polymers, or as stand-alone inks.

Abstract: A laminated polyester film includes a layer (S) of polyester and a layer (C) including a polyester resin (A) having a fluorene backbone, wherein a surface of the layer (C) has an adhesive index after a heat and wet test of 3 to 5.

Abstract: A semiconductor optical modulator with the Mach-Zender type is disclosed. The optical modulator of the invention cab driven by a single phase signal and reduce the chirping of the modulated light. Two waveguides of the Mach-Zender modulator each including an active layer showing the exciton resonance in the refractive index are connected with a resistor. The driving signal is applied to one of the waveguides, while, the signal is applied to the other waveguide through the resistor where the other waveguide is grounded through a resistor. Adjusting the resistance of two resistors and the amplitude of the applied signal, the Mach-Zender modulator shows a substantial modulation degree with substantially no chirping characteristic.

Abstract: A semiconductor light emitting device includes a pump light source, a gain structure, and an out-coupling mirror. The gain structure is comprised of InGaN layers that have resonant excitation absorption at the pump wavelength. Light from the pump light source causes the gain structure to emit light, which is reflected by the out-coupling mirror back to the gain structure. A distributed Bragg reflector causes internal reflection within the gain structure. The out-coupling mirror permits light having sufficient energy to pass therethrough for use external to the device. A frequency doubling structure may be disposed between the gain structure and the out-coupling mirror. Output wavelengths in the deep-UV spectrum may be achieved.

Abstract: A system and method for an electrically pumped laser system is disclosed. The system includes a silicon micro-ring resonator 405. A quantum well 412 formed of a III-V group semiconductor material is optically coupled with the micro-ring resonator 405 to provide optical gain. A trapezoidal shaped buffer 414 formed of a III-V group semiconductor material and doped with a first type of carrier is optically coupled to the quantum well 412. A ring electrode 410 is coupled to the trapezoidal shaped buffer 414. The trapezoidal shaped buffer 414 enables the ring electrode 410 to be substantially isolated from an optical mode of the micro-ring resonator 405.

Abstract: A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.

Abstract: A dislocation-free high quality template with relaxed lattice constant, fabricated by spatially restricting misfit dislocation(s) around heterointerfaces. This can be used as a template layer for high In composition devices. Specifically, the present invention prepares high quality InGaN templates (In composition is around 5-10%), and can grow much higher In-composition InGaN quantum wells (QWs) (or multi quantum wells (MQWs)) on these templates than would otherwise be possible.

Abstract: Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar substrate. The dimensions and separation of the wires are determined by the thicknesses of alternating layers of different materials that are in the form of a superlattice. Wires are created by evaporating the desired material onto the superlattice that has been selectively etched to provide height contrast between layers. The wires thus formed upon one set of superlattice layers are then transferred to a substrate.

Abstract: A 3-terminal electronic device includes: a control electrode; a first electrode and a second electrode; and an active layer that is provided between the first electrode and the second electrode and is provided to be opposed to the control electrode via an insulating layer. The active layer includes a collection of nanosheets. When it is assumed that the nanosheets have an average size LS and the first electrode and the second electrode have an interval D therebetween, LS/D?10 is satisfied.

Abstract: The present invention relates to a bioactive material and to a method of producing a bioactive material which is suitable for use as an implant or for use as a bone substitute for repairing bone.

Abstract: A method of making at least one nanographene layer is disclosed herein. The method includes selecting X hydrocarbon precursor and Y hydrogen gas (H2) such that a ratio of X/Y ranges from 0.5 to 1, the hydrocarbon precursor including at least one of CH4, C2H2 or C3H8. The method further includes submitting the hydrocarbon precursor to chemical vapor deposition using the hydrogen gas and argon gas (Ar). As a result, i) the hydrocarbon precursor reacts with the hydrogen gas and argon gas (Ar) according to the following reaction: X hydrocarbon precursor+YH2+ZAr?2X graphene+(Y+2X)H2+ZAr, where Z ranges from 5*(X+Y) to 10*(X+Y), and ii) the hydrocarbon precursor decomposes and self-assembles to form the at least one nanographene layer.

Abstract: The present invention relates to a an on-chip inductor structure and a method for manufacturing the same. The an on-chip inductor structure according to the present invention comprises a substrate, a porous layer, a plurality of conductors, and an inductor. The porous layer is disposed on the substrate and has a plurality of voids; each of the plurality of conductors is disposed in the plurality of voids, respectively; and the inductor is disposed on the porous layer. Because the plurality of conductors is used as the core of the inductor, the inductance is increased effectively and the area of the an on-chip inductor is reduced. Besides the manufacturing method according to the present invention is simple and compatible with the current CMOS process, the manufacturing cost can be lowered.

Abstract: A semiconductor device includes an electrode pad and an external connection terminal. The external connection terminal contains Sn equal to or more than 50 wt %, Sn and Pb equal to or more than 90 wt % in total, or Pb equal to or more than 85 wt %, and the surface thereof is coated with an Au layer. The thickness of the Au layer is preferably equal to or more than 10 nm and equal to or less than 1 ?m. The weight of the Au layer is preferably equal to or less than 0.6% of the weight of the external connection terminal.

Abstract: A logic device includes: a substrate having a channel layer; two input terminal patterns of ferromagnetic material formed on the substrate and spaced apart from each other along a longitudinal direction of the channel layer so as to serve as the input terminals of a logic gate; and an output terminal pattern of ferromagnetic material formed on the substrate and disposed between the two input terminal patterns to serve as an output terminal of the logic gate. The output terminal pattern reads an output voltage by using spin accumulation and diffusion of electron spins which are injected into the channel layer from the input terminal patterns.

Abstract: In a photon pair generating apparatus for generating a pair of correlated photons by hyper-parametric scattering, a light-shaping section irradiates an optical resonator with two beams of light of equal wavelength from different directions, and the optical resonator is configured to emit two correlated photons of different wavelengths in one direction as a pair of correlated photons. This makes it possible to provide a photon pair generating apparatus capable of achieving generation of a pair of correlated photons by a simpler configuration.

Abstract: The present invention provides a wide temperature range (WiTR) operating wavelength-narrowed and wavelength-stabilized semiconductor laser having a wide bandwidth gain medium imbedded in a waveguide layer comprising a plurality of quantum dots or quantum wells wherein each quantum dot or quantum well has a different gain peak-wavelength that provides gain at different temperatures as the junction temperature of the laser changes. Therefore, the wavelength defined by an appropriate grating to lock the wavelength and narrow the emission-bandwidth can be realized over a much wider operating temperature range than possible with gain medium that comprises just single quantum well or quantum dot or a plurality of quantum wells or quantum dots that have the same gain peak-wavelength.

Abstract: A cooling system comprising a plurality of coolant channels comprising a fluid-impervious surface comprising a base surface, at least one distinct region of the base surface covered by a mixed monolayer, the mixed monolayer comprising a species having a functional group M1 and a species having a functional group M2 where M1 and M2 have different surface energies, the mixed monolayer forming a surface energy gradient within the region and wherein any portions of the surface that border the at least one distinct region have substantially equal surface energies.

Abstract: A high-efficiency LED includes: a substrate, an epitaxial layer structure, a cathode, an anode, a transparent sealing compound and a polyimide layer. The polyimide layer covers surfaces of the epitaxial layer structure and the substrate. The transparent sealing compound covers the polyimide layer, the substrate, the epitaxial layer structure, the cathode and the anode. The polyimide layer of the present invention has a refractive index higher than that of packaging materials in prior art, so as to reduce total internal reflection and optical consumption caused by light scattered from the epitaxial layer structure and the transparent sealing compound.

Abstract: The present invention relates to the field of analyzing the age and/or quality of certain natural products, for example foods. The invention also relates to devices for analyzing said age and/or quality as well as to methods for preparing such devices, to methods for analyzing natural products and to their use.

Abstract: The subject of the invention is a transparent substrate (6) having at least one antireflection coating, made from a film (A) comprising multiple thin layers of alternately high and low refractive indexes. The multilayer film comprises, in succession: a high-index first layer (1), having a refractive index n1 of between 1.8 and 2.3 and a geometrical thickness e1 of between 5 and 50 nm; a low-index second layer (2), having a refractive index n2 of between 1.30 and 1.70 and a geometrical thickness e2 of between 5 and 50 nm; a high-index third layer (3), having a refractive index n3 of between 1.8 and 2.3 and a geometrical thickness e3 of at least 100 nm; a low-index fourth layer (4), having a refractive index n4 of between 1.30 and 1.70 and a geometrical thickness e4 of at least 80 nm. This antireflection coating can be used in solar modules.

Abstract: The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlzGa1-zAsySbi-y, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlzGauInvAsySb1-y, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.

Abstract: A structure for improving the mirror facet cleaving yield of (Ga,Al,In,B)N laser diodes grown on nonpolar or semipolar (Ga,Al,In,B)N substrates. The structure comprises a nonpolar or semipolar (Ga,Al,In,B)N laser diode including a waveguide core that provides sufficient optical confinement for the device's operation in the absence of p-type doped aluminum-containing waveguide cladding layers, and one of more n-type doped aluminum-containing layers that can be used to assist with facet cleaving along a particular crystallographic plane.

Abstract: Disclosed are tunable catalysts and methods of controlling the activity of a catalyst. For example, disclosed are methods of controlling the activity of a catalyst, comprising providing a catalyst, comprising a ferroelectric substrate of finite thickness comprising two opposing surfaces, the ferroelectric substrate being characterized as having a polarization; an electrode surmounting one of the surfaces of the ferroelectric substrate; and a catalytically active material surmounting the surface of the ferroelectric substrate opposing the electrode; and subjecting the ferroelectric substrate to a controllable electric field to give rise to a modulation of the polarization of the ferroelectric substrate, whereby the modulation of the polarization controllably alters the activity of one or more chemical species on the catalytically active material.

Abstract: A device representing a reflector, for example, an evanescent reflector or a multilayer interference reflector with at least one reflectivity stopband is disclosed. A medium with means of generating optical gain is introduced into the layer or several layers of the reflector. The optical gain spectrum preferably overlaps with the spectral range of the reflectivity stopband. This device can be attached to air, semiconductor or dielectric material or multilayer structures and provide a tool for preferential amplification of the optical waves propagating at larger angles with respect to the interface with the evanescent or the multilayer interference reflector. Thus angle selective amplification or generation of light is possible. Several evanescent or interference reflectors can be used to serve the goal of preferable amplification the said optical waves.

Abstract: A nano-sized ultrathin film dielectric composed mainly of either a single nanosheet of titanium oxide obtained by exfoliating layer titanium oxide or a laminate thereof. Thus, there can be accomplished low-temperature production of a dielectric device that simultaneously realizes high dielectric constant and excellent insulating performance in nanoregions and reduces influences of substrate interface deterioration and nonstoichiometry.

Abstract: A red surface emitting laser element includes a first reflector, a second reflector including a p-type semiconductor multilayer film, an active layer between the first reflector and the second reflector, and a p-type semiconductor spacer layer between the active layer and the second reflector, the p-type semiconductor spacer layer having a thickness of 100 nm or more and 350 nm or less.

Abstract: Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.

Abstract: A light-emitting device is disclosed, including a light-emitting element and a surface plasmon coupling element, having an intermediary layer connected to the light-emitting element and a metal structure on the intermediary layer, wherein the intermediary layer is conductive under low-frequency injection current and has the characteristics as dielectric material in a wavelength range 100 nm˜20000 nm.

Abstract: Disclosed is a method for forming a photocatalyst thin film, which is characterized in that a photocatalyst thin film containing a niobium-alkali metal complex oxide is formed by forming and then firing a layer containing a niobia nanosheet on the surface of a base containing an alkali metal.

Abstract: A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way of example, a SWG reflective structure is disposed over a low index cavity region and above another reflective layer (either SWG or DBR). In one embodiment, the SWG structure is movable, such as according to MEMS techniques, in relation to the opposing reflector to provide wavelength selective tuning. The SWG-VCSEL design is scalable to form the optical cavities for a range of SWG-VCSELs at different wavelengths, and wavelength ranges.

Abstract: A vertical cavity surface emitting laser (VCSEL) is described using a sub-wavelength grating (SWG) structure that has a very broad reflection spectrum and very high reflectivity. The grating comprises segments of high and low refractive index materials with an index differential between the high and low index materials. By way of example, a SWG reflective structure is disposed over a low index cavity region and above another reflective layer (either SWG or DBR). In one embodiment, the SWG structure is movable, such as according to MEMS techniques, in relation to the opposing reflector to provide wavelength selective tuning. The SWG-VCSEL design is scalable to form the optical cavities for a range of SWG-VCSELs at different wavelengths, and wavelength ranges.

Abstract: Quantum cascade lasers (QCLs) with intra-cavity second-harmonic generation configured to emit light in the ?=2.5-3.8 ?m band, and methods of use and manufacture.

Abstract: An apparatus includes a primary planar quantum well and a planar distribution of dopant atoms. The primary planar quantum well is formed by a lower barrier layer, a central well layer on the lower barrier layer, and an upper barrier layer on the central well layer. Each of the layers is a semiconductor layer. One of the barrier layers has a secondary planar quantum well and is located between the planar distribution of dopant atoms and the central well layer. The primary planar quantum well may be undoped or substantially undoped, e.g., intrinsic semiconductor.

Abstract: A semiconductor laser device includes a first semiconductor laser element and a second semiconductor laser element different in oscillation wavelength from the first semiconductor laser element, both formed on a substrate. The first and second semiconductor laser elements have a cavity length of 1500 ?m or more, and each have an n-type cladding layer made of Iny(Ga1-x1Alx1)1-yP (0<x1<1, 0<y<1) and a p-type cladding layer made of Iny(Ga1-x2Alx2)1-yP (0<x2<1, 0 <y<1). An active layer is made of AlzGa1-zAs (0?z?1) and includes only one well layer.

Abstract: Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon.