Abstract: A nitride semiconductor laser device includes an n-type AlGaN clad layer, a GaN layer, a first InGaN light guide layer, a light-emitting layer, a second InGaN light guide layer, a nitride semiconductor intermediate layer, a p-type AlGaN layer, and a p-type AlGaN clad layer stacked in this order on a nitride semiconductor substrate, wherein the n-type AlGaN clad layer has an Al composition ratio of 3-5% and a thickness of 1.8-2.5 ?m; the first and second InGaN light guide layers have an In composition ratio of 3-6%; the first light guide layer has a thickness of 120-160 nm and greater than that of the second light guide layer; and the p-type AlGaN layer is in contact with the p-type clad layer and has an Al composition ratio of 10-35% and greater than that of the p-type clad layer.

Abstract: The present invention relates to a capacitor film comprising a biaxially oriented polypropylene wherein a) said polypropylene has a draw ratio in machine direction of at least 4.0 and a draw ratio in transverse direction of at least 4.0, and b) said polypropylene has an electrical breakdown strength EB63% according to IEC 60243-part 1 (1988) of at least 300 kV/mm at a draw ratio in machine direction and in transverse direction of 4.0.

Abstract: Disclosed are a humidity sensor and a fabricating method thereof. The humidity sensor includes a substrate, an anodic aluminum oxide layer formed on the substrate and having a plurality of holes, and electrodes formed on the anodic aluminum oxide layer, in order to improve sensitivity and accuracy of the humidity sensor. Further, the fabricating method of a humidity sensor includes preparing an aluminum substrate, forming an anodic aluminum oxide layer by oxidizing the aluminum substrate, and forming electrodes on the anodic aluminum oxide layer.

Abstract: An optical recording medium includes a first half-disc and a second half-disc. The first half-disc includes a substrate and an information layer (including a reflective layer) formed on a first side of the substrate. The second half-disc is bonded by an adhesive to a second side of the substrate of the first half-disc. In addition, a cover layer is formed over the first reflective layer. The cover layer has a thickness of approximately 0.1 mm. The substrate of the first half-disc has a thickness in a range of 0.3 mm to 1.0 mm. The first and second half-discs together have a combined thickness in a range of 0.8 mm to 1.3 mm.

Abstract: A recording medium providing improved writeability in perpendicular recording applications includes a magnetic recording layer having an axis of magnetic anisotropy substantially perpendicular to the surface thereof, an exchange-spring layer ferromagnetically exchange coupled to the magnetic recording layer and having a coercivity less than the magnetic recording layer coercivity, and a coupling layer between the magnetic recording layer and the exchange-spring layer. The coupling layer regulates the ferromagnetic exchange coupling between the magnetic recording layer and the exchange-spring layer.

Abstract: An exemplary working electrode includes a transparent conductive substrate, a nanorod layer formed on the transparent conductive substrate, and a porous semiconductor layer formed on the nanorod layer. The nanorod layer includes a plurality of nanorods. Each nanorod is comprised of a material selected from the group consisting of iridium-iridium oxide and ruthenium-ruthenium oxide. The porous semiconductor layer has a dye sensitizer adsorbed thereon.

Abstract: Disclosed is a nanostructure including a first set of nanowires formed from filling a plurality of voids of a template. The nanostructure also includes a second set of nanowires formed from filling a plurality of spaces created when the template is removed, such that the second set of nanowires encases the first set of nanowires. Several methods are also disclosed. In one embodiment, a method of fabricating a nanostructure including nanowires is disclosed. The method may include forming a first set of nanowires in a template, removing a first portion of the template, thereby creating spaces between the first set of nanowires, forming a second set of nanowires in the spaces between the first set of nanowires, and removing a second portion of the template.

Abstract: An array of thyristor detector devices is provided having an epitaxial growth structure with complementary types of modulation doped quantum well interfaces located between a P+ layer and an N+ layer. The thyristor detector devices operate over successive cycles that each include a sequence of two distinct modes: a setup mode and a signal acquisition mode. During the setup mode, the n-type quantum well interface and/or the p-type quantum well interface is(are) substantially emptied of charge. During the signal acquisition mode, photocurrent is generated by the thyristor detector device in response to the absorption of incident electromagnetic radiation therein, which can induce the thyristor detector device to switch from an OFF state to an ON state. The OFF/ON state of the thyristor detector device produces an output digital electrical data that corresponds to the amount of incident radiation absorbed by the thyristor detector device during the signal acquisition mode of the current cycle.

Abstract: A semiconductor photodetector for photon detection without the use of avalanche multiplication, and capable of operating at low bias voltage and without excess noise. In one embodiment, the photodetector comprises a plurality of InP/AlInGaAs/AlGaAsSb layers, capable of spatially separating the electron and the hole of an photo-generated electron-hole pair in one layer, transporting one of the electron and the hole of the photo-generated electron-hole pair into another layer, focalizing it into a desired volume and trapping it therein, the desired volume having a dimension in a scale of nanometers to reduce its capacitance and increase the change of potential for a trapped carrier, and a nano-injector, capable of injecting carriers into the plurality of InP/AlInGaAs/AlGaAsSb layers, where the carrier transit time in the nano-injector is much shorter than the carrier recombination time therein, thereby causing a very large carrier recycling effect.

Abstract: A non-volatile bistable nano-electromechanical switch is provided for use in memory devices and microprocessors. The switch employs carbon nanotubes as the actuation element. A method has been developed for fabricating nanoswitches having one single-walled carbon nanotube as the actuator. The actuation of two different states can be achieved using the same low voltage for each state.

Abstract: A semiconductor laser includes: a multiple quantum well active layer that is formed on a semiconductor substrate comprised by GaAs and includes well layers having GaInAsP that has a tensile strain against the GaAs, and a barrier layer having AlGaInP that has substantially zero strain against the GaAs, the well layers and the barrier layer being alternately stacked; a pair of first AlGaInP layers that has substantially zero strain against the GaAs, and is provided so that the first AlGaInP layers contact upper and lower surfaces of the multiple quantum well active layer respectively; and a pair of second AlGaInP layers that has a compressive strain against the GaAs, and is provided so that the second AlGaInP layers contact the pair of first AlGaInP layers respectively.

Abstract: A quantum cascade laser includes a semiconductor substrate, and an active layer which is provided on the semiconductor substrate, and has a cascade structure in which unit laminate structures 16 having quantum well emission layers 17 and injection layers 18 are laminated in multiple stages. Further, the quantum cascade laser is configured such that the unit laminate structure 16 has an emission upper level Lup, an emission lower level Llow, and a relaxation miniband MB including an energy level lower than the emission lower level in its subband level structure, and light is generated by an intersubband transition of electrons from the upper level to the lower level, and the electrons after the intersubband transition are relaxed from the lower level Llow to the miniband MB through LO phonon scattering, to be injected from the injection layer 18 to the latter stage emission layer via the miniband MB.

Abstract: Methods for producing macroscopic quantities of oxidized graphene nanoribbons are disclosed herein. The methods include providing a plurality of carbon nanotubes and reacting the plurality of carbon nanotubes with at least one oxidant to form oxidized graphene nanoribbons. The at least one oxidant is operable to longitudinally open the carbon nanotubes. In some embodiments, the reacting step takes place in the presence of at least one acid. In some embodiments, the reacting step takes place in the presence of at least one protective agent. Various embodiments of the present disclosure also include methods for producing reduced graphene nanoribbons by reacting oxidized graphene nanoribbons with at least one reducing agent. Oxidized graphene nanoribbons, reduced graphene nanoribbons and compositions and articles derived therefrom are also disclosed herein.

Abstract: A semiconductor laser device includes: an n-type cladding layer, a p-type cladding layer, an active layer located between the n-type cladding layer and the p-type cladding layer, an n-side guiding layer located on the same side of the active layer as the n-type cladding layer, and a p-side guiding layer located on the same side of the active layer as the p-type cladding layer. The n-side guiding layer, the active layer, and the p-side guiding layer are undoped or substantially undoped. The sum of the thicknesses of the n-side guiding layer, the active layer, and the p-side guiding layer is not less than 0.5 times the lasing wavelength of the semiconductor laser device and is not more than 2 ?m. The p-side guiding layer is thinner and has a lower refractive index than the n-side guiding layer.

Abstract: A gain medium and an interband cascade laser, an interband cascade amplifier, and an external cavity laser having the gain medium are presented.

Abstract: A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Abstract: A polymer composition, containing a polymer matrix which contains an elastomer; and a functional graphene which displays no signature of graphite and/or graphite oxide, as determined by X-ray diffraction, exhibits excellent strength, toughness, modulus, thermal stability and electrical conductivity.

Abstract: Varactor shunt switches based on a nonlinear dielectric tunability of BaxSr(1?x)TiO3 (BST) thin-film on a sapphire substrates are presented. Nanostructured BST thin-films with dielectric tunability as high as 4.3:1 can be obtained on sapphire substrates, with very low loss-tangents below 0.025 at zero-bias and 20 GHz. The large capacitance of the varactor at zero bias can shunt the input signal to ground isolating the output port, resulting in the OFF state. When applying a bias voltage of approximately 10 V (a dc electric field of ˜250 kV/cm), the varactor's capacitance can be reduced to a minimum, allowing maximum transmission to the output resulting in the ON state. The microwave switching performance of the varactor shunt switch can be compared with the RF MEMS switches for potential applications at microwave and millimeterwave frequencies.

Abstract: A method for producing light emission from a semiconductor device includes the following steps: providing a semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region that forms a tunnel junction adjacent the base region; providing, in the base region, a region exhibiting quantum size effects; providing an emitter terminal, a base terminal, and a collector terminal respectively coupled with the emitter region, the base region, and the collector region; and applying electrical signals with respect to the emitter terminal, the base terminal and the collector terminal to produce light emission from the base region.

Abstract: The present invention discloses a method for manufacturing ultra-thin reinforced membranes from a SOI wafer having a front side and a back side, the front side having an etch stop layer buried under a device layer, provided for by forming reinforcement bars by etching openings in the device layer down to the etch stop layer, filling the openings at least partially by deposition of a first filler, and then polishing the top surface to the silicon surface before depositing a membrane material.

Abstract: A method for enhancing operation of a bipolar light-emitting transistor includes the following steps: providing a bipolar light-emitting transistor having emitter, base, and collector regions; providing electrodes for coupling electrical signals with the emitter, base, and collector regions; and adapting the base region to promote carrier transport from the emitter region toward the collector region by providing, in the base region, several spaced apart quantum size regions of different thicknesses, with the thicknesses of the quantum size regions being graded from thickest near the collector to thinnest near the emitter.

Abstract: Systems and methods for electrically pumped, surface-emitting and edge emitting ZnO ultraviolet diode lasers are disclosed. The ZnO diode laser may be fabricated using growth processes (e.g., MBE) to form Sb-doped ZnO as a p-type layer and doped ZnO as an n-type layer. ZnO-based quantum well structures may be further formed in between the n- and p-type ZnO layers. The ZnO layers and quantum wells may be grown in columnar structures which act as resonant cavities for generated light, significantly improving light amplification and providing high power output. For example, ultraviolet lasing at around 380 nm was demonstrated at about room temperature at a threshold current density of about 10 A/cm2. The output power was further measured to be about 11.3 ?W at about 130 mA driving current.

Abstract: Nanocomposite materials comprising a metal oxide bonded to at least one graphene material. The nanocomposite materials exhibit a specific capacity of at least twice that of the metal oxide material without the graphene at a charge/discharge rate greater than about 10C.

Abstract: This invention relates to free-flowing compositions of carbon nanosheets and core-shell particles, and to a plasma-torch process for making them.

Abstract: A nano-hole array for improving contact conductance of a conductor element that consists of a first layer and a second layer is provided. The nano-hole array formed between the first and second layers comprises a plurality of holes. The contact conductance of the conductor element is enhanced by reducing the hole size of the hole array, increasing the occupation rate of the hole array, and performing thermal annealing.

Abstract: Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, an undoped InGaN layer 7, and a p-type GaN-based contact layer 8 are stacked on a sapphire substrate 1. A p-electrode 9 is formed on the p-type GaN-based contact layer 8. An n-electrode 10 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. The undoped InGaN layer 7 is included in an intermediate semiconductor layer formed between the p-type GaN-based contact layer 8 and a well layer closest to a p-side in the active layer having a quantum well structure.

Abstract: A semiconductor light emitting device includes a first layer made of at least one of n-type GaN and n-type AlGaN; a second layer made of Mg-containing p-type AlGaN; and a light emitting section provided between the first layer and the second layer. The light emitting section included a plurality of barrier layers made of Si-containing AlxGa1?x?yInyN (0?x, 0?y, x+y?1), and a well layer provided between each pair of the plurality of barrier layers and made of GaInN or AlGaInN. The plurality of barrier layers have a nearest barrier layer and a far barrier layer. The nearest barrier layer is nearest to the second layer among the plurality of barrier layers. The nearest barrier layer includes a first portion and a second portion. The first portion is made of Si-containing AlxGa1?x?yInyN (0?x, 0?y, x+y?1). The second portion is provided between the first portion and the second layer and is made of AlxGa1?x?yInyN (0?x, 0?y, x+y?1).

Abstract: A moisture detector includes a light-receiving element including an absorption layer having a pn-junction, or an array of the light-receiving elements, wherein the absorption layer has a multiquantum well structure composed of a Group III-V semiconductor, the pn-junction is formed by selectively diffusing an impurity element into the absorption layer, and the concentration of the impurity in the absorption layer is 5×1016/cm3 or less. The moisture detector receives light having at least one wavelength included in an absorption band of water lying in a wavelength range of 3 ?m or less, thereby detecting moisture.

Abstract: The present invention provides a dispersible and electrically conductive nano graphene platelet (NGP) material comprising at least a single-layer or multiple-layer graphene sheet, wherein the NGP material has an oxygen content no greater than 25% by weight and no less than 5% by weight. This NGP material can be produced by: (a) preparing a pristine NGP material from a graphitic material; and (b) subjecting the pristine NGP material to an oxidation treatment. Alternatively, the production process may comprise: (A) preparing a graphite oxide (GO) from a laminar graphite material; (b) exposing the GO to a first temperature for a first period of time to obtain exfoliated graphite; and (c) exposing the exfoliated graphite to a second temperature in a protective atmosphere for a second period of time.

Abstract: The present invention provides a process for producing nano graphene platelets (NGPs) that are dispersible and conducting. The process comprises: (a) preparing a graphite intercalation compound (GIC) or graphite oxide (GO) from a laminar graphite material; (b) exposing the GIC or GO to a first temperature for a first period of time to obtain exfoliated graphite; and (c) exposing the exfoliated graphite to a second temperature in a protective atmosphere for a second period of time to obtain the desired dispersible nano graphene platelet with an oxygen content no greater than 25% by weight, preferably below 20% by weight, further preferably between 5% and 20% by weight. Conductive NGPs can find applications in transparent electrodes for solar cells or flat panel displays, additives for battery and supercapacitor electrodes, conductive nanocomposite for electromagnetic wave interference (EMI) shielding and static charge dissipation, etc.

Abstract: The present application relates to an opto-electronic device. The opto-electronic device includes an n-cladding layer, a p-cladding layer and a multi-quantum well structure. The multi-quantum well structure is located between the p-cladding layer and the n-cladding layer, and includes a plurality of barrier layers, a plurality of well layers and a barrier tuning layer. The barrier tuning layer is made by doping the barrier layer adjacent to the p-cladding layer with an impurity therein for changing an energy barrier thereof to improve the light extraction efficiency of the opto-electronic device.

Abstract: A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.

Abstract: A two terminal semiconductor device for producing light emission in response to electrical signals, includes: a terminal-less semiconductor base region disposed between a semiconductor emitter region and a semiconductor collector region having a tunnel junction adjacent the base region; the base region having a region therein exhibiting quantum size effects; an emitter terminal and a collector terminal respectively coupled with the emitter region and the collector region; whereby application of the electrical signals with respect to the emitter and collector terminals, causes light emission from the base region. Application of the electrical signals is operative to reverse bias the tunnel junction. Holes generated at the tunnel junction recombine in the base region with electrons flowing into the base region, resulting in the light emission. The region exhibiting quantum size effects is operative to aid recombination.

Abstract: The thermoelectric detector consists of an absorber structure supported by two electrically connected beams made of thermoelectric materials such as polysilicon, polysilicon/germanium, bismuth-telluride, skutterrides, superlattice structures, nano-composites and other materials. One end of the thermoelectric beam connects to the absorber structure; the other end connects to the substrate. Infrared radiation incident on the absorber heats up the absorber, resulting in a temperature gradient along the length of the thermoelectric legs, and generating an electrical voltage. The detector arrays are fabricated using micromachining process. The absorber structure is formed over a sacrificial material that is removed at the end of the processing, leaving the detector suspended and thermally isolated. The sacrificial processing method enables the production of small pixel thermoelectric detectors in large two-dimensional arrays with high sensitivity.

Abstract: A thermochromic optical filter incorporating quantum confinement devices is formed as multilayered composite film of semiconducting materials. A quantum well adjacent a barrier layer ensures proper confinement of charge carriers within the well. A transition wavelength (i.e., the energy/wavelength at which the filter becomes transparent) is established by selecting a quantum well material with a bandgap near the desired energy and a barrier layer material with a higher bandgap. For a given reference temperature (e.g., room temperature), the exact transition wavelength is fixed by the thickness of the quantum well. The quantum confinement energy is added to the bandgap energy to yield the transition energy. A thermal control system varies the temperature of the thermochromic filter to adjust the transition wavelength. Temperature changes affect both the bandgap and the quantum confinement energy, and thus the optical properties of the thermochromic filter.

Abstract: In one aspect, the invention provides a defect multiple-quantum-well structure for manipulation of reflection and transmission of light by way of optical control of spatial distribution of electric field across the defect multiple-quantum-well structure. The defect multiple-quantum-well structure includes a pair of terminal multiple-quantum-well structures and a central multiple-quantum-well structure. The central multiple-quantum-well structure is sandwiched between the pair of terminal multiple-quantum-well structures. Each of the pair of terminal multiple-quantum-well structures has a band gap profile, and the central multiple-quantum-well structure has a band gap profile. The band gap profile of the central multiple-quantum-well structure is greater than the band gap profile of each of the pair of terminal multiple-quantum-well structures.

Abstract: A solar cell of quantum well store is disclosed, including a semiconductor substrate (1), a diffusion layer (2) and upper and lower electrodes (7,6), a light doped epitaxial layer (10) whose conductive type is the same as the semiconductor substrate is disposed on the semiconductor substrate (1), there are ribs on the epitaxial layer (10), the ribs are the structure of strip shape and comprise multiple perpendicular ribs (11) which are parallel and at least a longitudinal rib (13), the longitudinal rib (13) is connected with and runned through perpendicular ribs (11), a interspace surrounded by longitudinal rib (13) and perpendicular ribs (11) is a space of ribs (12); disposed on the ribs of strip shape: a nanometer ion-implanted layer (3) which has opposite conductive type to that of epitaxial layer and a high doped layer (4) which has opposite conductive type to that of ion-implanted layer, the ion-implanted layer is covered with the high doped layer, and the high doped layer is covered with a metal layer (

Abstract: The present invention provides a single-electron transistor device 100. The device comprises a source 105 and drain 110 located over a substrate 115 and a quantum island 120 situated between the source and drain, to form tunnel junctions 125, 130 between the source and drain. The device further includes a fixed-gate electrode 135 located adjacent the quantum island 120. The fixed-gate electrode has a capacitance associated therewith that varies as a function of an applied voltage to the fixed-gate electrode. The present invention also includes a method of fabricating a single-electron device 300, and a transistor circuit 800 that include a single-electron device 810.

Abstract: Disclosed a nitride semiconductor LED including: a substrate; a GaN-based buffer layer formed on the substrate; AlyGa1?yN/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, 0?y?1); a first electrode layer of an n-GaN layer formed on the upper AlyGa1?yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.

Abstract: There is provided a hetero junction field effect transistor including: a first layer of a nitride based, group III-V compound semiconductor; a second layer of a nitride based, group III-V compound semiconductor containing a rare earth element, overlying the first layer; a pair of third layers of a nitride based, group III-V compound semiconductor, overlying the second layer, the third layers being spaced from each other; a gate electrode disposed between the third layers at least a region of the second layer; and a source electrode overlying one of the third layers and a drain electrode overlying an other of the third layers. A method of fabricating the hetero junction field effect transistor is also provided.

Abstract: A solar cell device includes a p-n diode component over a substrate, the p-n diode component including at least one subcell, each subcell including an n-type semiconductor layer and a p-type semiconductor layer to form a p-n junction. The solar cell device further includes at least two features selected from: i) a nano-structured region between at the p-n junction of at least one subcell; ii) an n-type and/or a p-type layer of at least one subcell that includes a built-in quasi-electric field; and iii) a photon reflector structure. Alternatively, the solar cell device includes at least two subcells, and further includes a nano-structured region at the p-n junction of at least one of the subcells, wherein the subcells of the solar cell device are connected in parallel to each other by the p-type or the n-type semiconductor layer of each subcell.

Abstract: A light emitting diode which includes a laminate including an n-type cladding layer, an emission layer which has a quantum well structure having a well layer and a barrier layer, an intermediate layer and a p-type cladding layer in this order, wherein the composition of each of the layers is represented by the composition formula: (AlXGa1-X) YIn1-YP (0?X?1, 0<Y?1), and the composition of the barrier layer is represented by the composition formula: (AlXGa1-X) YIn1-YP (0.5?X?1, 0<Y?1).

Abstract: Provided is a method for controlling a carbon nanowall (CNW) structure having improved corrosion resistance against high potential by varying the spacing between the carbon nanowall (CNW) walls so that its surface area and crystallinity are controlled. Also provided is a carbon nanowall (CNW) with a high surface arca and a carbon nanowall (CNW) with a high crystallinity, both of which have a controlled structure. According to the present invention, provided are: (1) a carbon nanowall, characterized by having a wall surface area of 50 cm2/cm2-substrate·?m or more; (2) a carbon nanowall, characterized by having a crystallinity such that the D band half value width in the Raman spectrum measured with an irradiation laser wavelength of 514.5 nm is 85 cm?1 or less: and (3) a carbon nanowall, characterized by having not only a wall surface area of 50 cm2/cm2-substrate·?m or more but also a crystallinity such that the D-band half value width in the Raman spectrum measured with an irradiation laser wavelength of 14.

Abstract: In the method of fabricating a quantum well structure which includes a well layer and a barrier layer, the well layer is grown at a first temperature on a sapphire substrate. The well layer comprises a group III nitride semiconductor which contains indium as a constituent. An intermediate layer is grown on the InGaN well layer while monotonically increasing the sapphire substrate temperature from the first temperature. The group III nitride semiconductor of the intermediate layer has a band gap energy larger than the band gap energy of the InGaN well layer, and a thickness of the intermediate layer is greater than 1 nm and less than 3 nm in thickness. The barrier layer is grown on the intermediate layer at a second temperature higher than the first temperature. The barrier layer comprising a group III nitride semiconductor and the group III nitride semiconductor of the barrier layer has a band gap energy larger than the band gap energy of the well layer.

Abstract: A method of removing a substrate structure is described. A plurality of pillars is formed on a substrate by using a photolithography etching process. A group III nitride semiconductor layer is grown on the plurality of pillars. The plurality of pillars is etched to separate the group III nitride semiconductor layer from the substrate by using a chemical etching process.

Abstract: Terahertz quantum cascade (QC) devices are disclosed that can operate, e.g., in a range of about 1 THz to about 10 THz. In some embodiments, QC lasers are disclosed in which an optical element (e.g., a lens) is coupled to an output facet of the laser's active region to enhance coupling of the lasing radiation from the active region to an external environment. In other embodiments, terahertz amplifier and tunable terahertz QC lasers are disclosed.

Abstract: Disclosed are: a compatibilizing agent for a polymer alloy, which can increase the compatibility with a variety of polymers; a polymer alloy using the compatibilizing agent; and master batch for a polymer alloy. Specifically disclosed is a compatibilizing agent which is used for the preparation of a polymer alloy by blending at least one polymer (A) selected from the group consisting of a polyphenylene sulfide, a polyphenylene ether and a polyamide with a polymer (B) of a different type from the polymer (A) at such a ratio that the amount of the polymer (A) blended is the same as or more than that of the polymer (B). The compatibilizing agent comprises a nanosheet-shaped layered titanic acid which is produced by intercalate an organic basic compound between the layers of a layered titanic acid.

Abstract: An organic electroluminescent device of a composite material that includes at least two emissive polymers confined into a layered inorganic host matrix, which effectively isolates the polymer chains from their neighbors, and a method for manufacturing same. The isolation of the emitting chains inhibits energy transfer and exciton diffusion between polymer chains, such that the electrically generated excitons recombine radiatively before their energy could be funneled to the emissive moiety with the lowest band gap. The emission color of such a composite is a combination of the emission of the confined polymers, and can be either white light, or can be tuned by selection of the ratio of the mixtures to output light of any desired color. The different polymers can either be mixed and then intercalated into the host matrix, or they can each be intercalated separately into the host matrix and the resulting composites mixed.

Abstract: A white-light emitting diode comprises an n-type semiconductor layer, one or more quantum well structures formed over the n-type semiconductor layer, a p-type semiconductor layer formed on the quantum well structure, a first electrode formed on the p-type semiconductor, and a second electrode formed on at least a portion of the n-type semiconductor layer. Each quantum well structure includes an InxGa1-xN quantum well layer, an InyGa1-yN barrier layer (x>0.3 or x=0.3), and InzGa1-zN quantum dots, where x<y<z?1.

Abstract: A liquid crystal display (200) includes a first base plate (202), a second base plate (220), a liquid crystal layer (238) located between the first base plate and the second base plate, and two alignment films (210, 228). The two alignment films are respectively positioned on inner surfaces of the first base plate and the second base plate. Each alignment film is a film of oriented carbon nanotubes (212, 230). An oriented direction of the carbon nanotubes on the first base plate is perpendicular to that of the carbon nanotubes on the second base plate. A manufacturing method for the liquid crystal display is also disclosed.