Abstract: Embodiments of the invention include methods of etching nanodots, to methods of removing nanodots from substrates, and to methods of fabricating integrated circuit devices. In one embodiment, a method of etching nanodots that include a late transition metal includes exposing such nanodots to a gas comprising a phosphorus and halogen-containing compound and an oxidizing agent. After the exposing, the nanodots which are remaining and were exposed are etched (either partially or completely) with an aqueous solution comprising HF.

Abstract: Some embodiments include methods of removing noble metal-containing particles from over a substrate. The substrate is exposed to a composition that reduces adhesion between the noble metal-containing particles and the substrate, and simultaneously the substrate is spun to sweep at least some of the noble metal-containing particles off from the substrate. Some embodiments include methods in which tunnel dielectric material is formed across a semiconductor wafer. Metallic nanoparticles are formed across the tunnel dielectric material. A stack of two or more different materials is formed over the metallic nanoparticles. A portion of the stack is covered with a protective mask while another portion of the stack is left unprotected. The unprotected portion of the stack is removed to expose some of the metallic nanoparticles. The semiconductor wafer to is subjected to etchant suitable to undercut at least some of the exposed metallic nanoparticles, and simultaneously the semiconductor wafer is spun.

Abstract: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.

Abstract: Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a first block on a nanodot material, forming a first spacer on the first block, removing the first block to form a free standing spacer, removing exposed portions of the nanodot material and then the free standing spacer to form nanowires, forming a second block at an angle to a length of the nanowires, forming a second spacer on the second block, forming a second free standing spacer on the nanowires by removing the second block, and removing exposed portions of the nanowires and then the second free standing spacer to form an ordered array of nanodots.

Abstract: A method of adsorbing a nano-structure and an adsorption material using a solid thin film mask, including; depositing the mask over the entire surface of a tip of a probe microscope, grinding the end of the tip having the mask against a solid, thus removing the mask from the end of the tip, depositing a linker molecule layer over the entire surface of the tip the end of which has no mask, immersing the tip having the deposited linker molecule layer in a nano-structure solution, thus adsorbing the nano-structure on the linker molecule, and removing the mask from the tip. The mask is used to prevent deformation of the tip, and the nano-structure and the adsorption material can be deposited only on the end of the tip, regardless of the properties of the nano-structure and the adsorption material and regardless of the surface material of the tip and the properties thereof.

Abstract: The invention relates to a nanofiber fabrication method comprising nanofiber growth from a catalyst zone, furthermore comprising the following steps: producing at least one micropattern (11) on the surface of a substrate (1); producing a catalyst zone (50) on the surface of said micropattern; nanofiber growth from the catalyst zone, characterized in that the micropattern (11) comprises a base, at least partially convergent side walls and an upper face, said base being covered with a so-called “poison” layer (4) where no nanofiber growth catalysis effect can take place, the so-called “poison” layer not being present on said upper face; the base being covered with a catalyst layer (5) on the surface of the so-called “poison” layer; the thickness of the “poison” layer and the thickness of the catalyst layer being such that the nanofibers cannot grow either on the side walls or on the base of the micropatterns constructed beforehand.

Abstract: The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped grooves promote the formation of a face-centered cubic system (fcc) sphere array that is well ordered. In one embodiment, the (111) planes of the fcc sphere array are parallel to the angled side walls of the V-shaped groove. The (100) plane of the fcc sphere array is parallel to the top surface of the substrate, and may show a square symmetry among adjacent spheres. This square symmetry is unlike the hexagonal symmetry seen in monolayers of spherical domains and is a useful geometry for lithography applications, especially those used in semiconductor applications.

Abstract: Particles, which may include nanoparticles, are mixed with carbon nanotubes and deposited on a substrate to form a cold cathode. The particles enhance the field emission characteristics of the carbon nanotubes. An additional activation step may be performed on the deposited carbon nanotube mixture to further enhance the emission of electrons.

Abstract: A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

Abstract: The present invention is directed to the formation of sublithographic features in a semiconductor structure using self-assembling polymers. The self-assembling polymers are formed in openings in a hard mask, annealed and then etched, followed by etching of the underlying dielectric material. At least one sublithographic feature is formed according to this method. Also disclosed is an intermediate semiconductor structure in which at least one interconnect wiring feature has a dimension that is defined by a self-assembled block copolymer.

Abstract: The present invention provides a method for producing a product having a nanoporous surface in which the pore density, pore size or pore size distribution can be easily and readily controlled. The invention provides a method for producing a product having a nanoporous surface including: forming a material in which a plurality of nanoparticles is dispersed in a matrix; and selectively removing the nanoparticles from the material in which a plurality of nanoparticles is dispersed in a matrix.

Abstract: A method of fabricating a microchannel plate includes forming a plurality of pores in a silicon substrate. The plurality of pores is oxidized, thereby consuming silicon at surfaces of the plurality of pores and forming a silicon dioxide layer over the plurality of pores. At least a portion of the silicon dioxide layer is stripped, which reduces a surface roughness of the plurality of pores. A semiconducting layer can be deposited onto the surface of the silicon dioxide layer. The semiconducting layer is then oxidized, thereby consuming at least some of the polysilicon or amorphous silicon layer and forming an insulating layer. Resistive and secondary electron emissive layers are then deposited on the insulating layer by atomic layer deposition.

Abstract: Methods for fabricating nanoscale features are disclosed. One technique involves depositing onto a substrate, where the first layer may be a silicon layer and may subsequently be etched. A second layer and third layer may be deposited on the etch first layer, followed by the deposition of a silicon cap. The second and third layer may be etched, exposing edges of the second and third layers. The cap and first layer may be removed and either the second or third layer may be etched, creating a nanoscale pattern.

Abstract: An article of manufacture and methods of making same. In one embodiment, the article of manufacture has a plurality of zinc oxide layers substantially in parallel, wherein each zinc oxide layer has a thickness d1, and a plurality of organic molecule layers substantially in parallel, wherein each organic molecule layer has a thickness d2 and a plurality of molecules with a functional group that is bindable to zinc ions, wherein for every pair of neighboring zinc oxide layers, one of the plurality of organic molecule layers is positioned in between the pair of neighboring zinc oxide layers to allow the functional groups of the plurality of organic molecules to bind to zinc ions in the neighboring zinc oxide layers to form a lamellar hybrid structure with a geometric periodicity d1+d2, and wherein d1 and d2 satisfy the relationship of d1?d2?3d1.

Abstract: A method and device of nanostructured titania that is crack free. A method in accordance with the present invention comprises depositing a Ti film on a surface, depositing a masking layer on the Ti film, etching said masking layer to expose a limited region of the Ti film, the limited region being of an area less than a threshold area, oxidizing the exposed limited region of the Th.ucsbi film, and annealing the exposed limited region of the Ti film.

Abstract: The present invention discloses a suspended nanochannel transistor structure and a method for fabricating the same. The transistor structure of the present invention comprises a substrate; a side gate formed on the substrate; a dielectric layer covering the substrate and the side gate; a suspended nanochannel formed beside the lateral of the side gate with an air gap existing between the suspended nanochannel and the dielectric layer; a source and a drain formed over the dielectric layer and respectively arranged at two ends of the suspended nanochannel. The electrostatic force of the side gate attracts or repels the suspended nanochannel and thus fast varies the equivalent thickness of the side-gate dielectric layer. Thereby, the on/off state of the element is rapidly switched, or the initial voltage of the channel is altered.

Abstract: In accordance with the invention, the structure (10A, 10B) of a patterned nanoscale or near nanoscale device (“nanostructure”) is repaired and/or enhanced by liquifying the patterned device in the presence of appropriate guiding conditions for a period of time and then permitting the device to solidify. Advantageous guiding conditions include adjacent spaced apart or contacting surfaces (12, 13A, 13B) to control surface structure and preserve verticality and unconstrained boundaries to permit smoothing of edge roughness. In an advantageous embodiment, a flat planar surface (12) is disposed overlying a patterned nanostructure surface (13A, 13B) and the surface (13A, 13B) is liquified by a high intensity light source to repair or enhance the nanoscale features.

Abstract: Provided are methods of forming nano-devices. One of the methods includes forming a nano-scale self-assembly material layer on a substrate formed of at least one layer, forming a mask layer on the self-assembly material layer, performing a surface treatment process on the substrate using the mask layer as a mask, and removing the self-assembly material layer. Accordingly, it is possible to fabricate nano-devices through a nano-scale substrate patterning process, ion implantation process and etching process, without using a light source.

Abstract: Nanopatterned surfaces are prepared by a method that includes forming a block copolymer film on a substrate, annealing and surface reconstructing the block copolymer film to create an array of cylindrical voids, depositing a metal on the surface-reconstructed block copolymer film, and heating the metal-coated block copolymer film to redistribute at least some of the metal into the cylindrical voids. When very thin metal layers and low heating temperatures are used, metal nanodots can be formed. When thicker metal layers and higher heating temperatures are used, the resulting metal structure includes nanoring-shaped voids. The nanopatterned surfaces can be transferred to the underlying substrates via etching, or used to prepare nanodot- or nanoring-decorated substrate surfaces.

Abstract: The present invention discloses a method for manufacturing ultra-thin reinforced membranes from a SOI wafer having a front side and a back side, the front side having an etch stop layer buried under a device layer, provided for by forming reinforcement bars by etching openings in the device layer down to the etch stop layer, filling the openings at least partially by deposition of a first filler, and then polishing the top surface to the silicon surface before depositing a membrane material.

Abstract: A cooled liquid sample dispensing system comprises a pair of pins for holding a droplet of liquid therebetween and a cooling element. Each pin includes a tip spaced predetermined distance from the other pin to define a sample acquisition region. The pins acquire and hold a droplet of the liquid sample in the sample acquisition region formed in the space between the tips and apply the droplet to a selected sample handing system. The cooling element, when activated, cools the droplet of liquid to reduce evaporation.

Abstract: This invention provides a method for manufacturing a mold for an optical element having a nanostructure of nano-order fine depressions and elevations on a surface of a substrate. The method includes: forming at least one etching transfer layer on the substrate, and forming a thin film for hemispherical fine particle formation on the etching transfer layer; forming multiple hemispherical island-shaped fine particles, with any of thermal-, photo- and gas reactions or combination thereof to cause any of aggregation, decomposition and nucleation functions of a material of the thin film; and forming a conical pattern on the fine surface of the substrate, by successively etching the etching transfer layer and the substrate with a reactant gas, using the multiple island-shaped fine particles as a protective mask, thereby manufacturing a mold for an optical element having fine depressions and elevations or a nanostructure mold face on the surface of the substrate.

Abstract: Methods of shape modifying a nanodevice by contacting it with a low-energy focused electron beam are disclosed here. In one embodiment, a nanodevice may be permanently reformed to a different geometry through an application of a deforming force and a low-energy focused electron beam. With the addition of an assist gas, material may be removed from the nanodevice through application of the low-energy focused electron beam. The independent methods of shape modification and material removal may be used either individually or simultaneously. Precision cuts with accuracies as high as 10 nm may be achieved through the use of precision low-energy Scanning Electron Microscope scan beams. These methods may be used in an automated system to produce nanodevices of very precise dimensions. These methods may be used to produce nanodevices of carbon-based, silicon-based, or other compositions by varying the assist gas.

Abstract: Techniques for fabricating nanostructures are provided. In one embodiment a method includes forming a multilayer stack including at least one pair of a structural layer and a sacrificial layer on a substrate, patterning the multilayer stack in order to fabricate a nanostructure, and releasing the nanostructure from the patterned multilayer stack.

Abstract: A process for producing through simple operations a molding die for optical device having an antireflective structure of nano-order microscopic uneven plane on a substratum surface. The molding die for optical device having microscopic uneven plane (antireflective structure die plane) on a surface of substratum is produced by a process comprising forming one or more etching transfer layers on substratum; forming thin film for formation of semispherical microparticles on the etching transfer layers; causing the thin film to undergo aggregation, or decomposition, or nucleation of the material by the use of any of thermal reaction, photoreaction and gas reaction or a combination of these reactions so as to form multiple semispherical island-like microparticles; and using the multiple islandlike microparticles as a protective mask, carrying out sequential etching of the etching transfer layers and substratum by reactive gas to thereby form a conical pattern on the microscopic surface of the substratum.

Abstract: A method for forming a template useful for nanoimprint lithography comprises forming at least one pillar which provides a topographic feature extending from a template base. At least one conformal pattern layer and one conformal spacing layer, and generally a plurality of alternating pattern layers and spacing layers, are formed over the template base and pillar. A planarized filler layer is formed over the pattern and spacing layers, then the filler, the spacing layer and the pattern layer are partially removed, for example using mechanical polishing, to expose the pillar. One or more etches are performed to remove at least a portion of the pillar, the filler, and the spacing layer to result in the pattern layer protruding from the spacing layer and providing the template pattern.

Abstract: An optical element is provided with a fog reducing polymer layer. A reflection reducing nanostructure is formed on the surface of the fog reducing polymer layer.

Abstract: The present invention includes composition, methods of making and methods of using a multi-nano-well plate having a first layer at least partially disposed on the substrate and one or more nano-wells that extends through the first layer that extends toward the substrate, wherein the one or more nano-wells having an opening in the first layer connected to bottom layer by one or more walls.

Abstract: The present invention relates to a method of fabricating a nanostructure, comprising the following steps: prestructuring a substrate (1) adapted to receive the nanostructure to form a nanorelief (2) on the substrate, the nanorelief having flanks (4) extending from a bottom (1a) of the substrate and a top face (3) extending from said flanks, and then depositing on the substrate pre-structured in this way a single layer or multilayer coating intended to form the nanostructure; and further comprising: adding to the prestructured substrate or to the coating a separation layer adapted to enable separation of the coating and the substrate by external action of mechanical, thermomechanical or vibratory type; and exerting this external action on the substrate and/or the coating to recover selectively a top portion of the coating by separating it from the top face of the nanorelief so that this top portion constitutes some or all of the nanostructure.

Abstract: Sidewall tracing nanoprobes, in which the tip shape of the nanoprobe Is altered so that the diameter or width of the very tip of the probe is wider than the diameter of the supporting stem. Such side protruding probe tips are fabricated by a subtractive method of reducing the stem diameter, an additive method of increasing the tip diameter, or sideway bending of the probe tip. These sidewall tracing nanoprobes are useful for inspection of semiconductor devices, especially to quantitatively evaluate the defects on the side wall of trenches or via holes.

Abstract: The invention relates to novel methods of incorporating nanotubes for use in micro- or nano-devices. The invention further relates to incorporating nanotubes in micro or nano-devices and particularly synthesizing or growing nanotubes directly in or on components of a micro- or nano-device. In a particular embodiment, the invention relates to methods of synthesizing or growing nanotubes in a gas chromatography column and their use in portable gas chromatography devices.

Abstract: The present invention relates to a photochemical method for manufacturing nanometrically surface-decorated substrates, i.e. the creation of periodic and aperiodic patterns of highly ordered inorganic nanostructures on a substrate. This method is based on the selective photochemical modification of a self-assembled monolayer of metal compound loaded polymer core-shell systems on widely variable substrates. Light exposure through an appropriate mask causes selective chemical modification of the polymer core shell system. By subsequently placing the substrate in an appropriate chemical solution that eradicates the non-modified polymer, the pattern given by the used mask is reproduced on the surface. Finally, the remaining organic matrix is removed and metal salt is transformed to the single metal or metal oxide nanodots by means of gas plasma treatment.

Abstract: Carbon nanotube-based devices made by electrolytic deposition and applications thereof are provided. In a preferred embodiment, the present invention provides a device comprising at least one array of active carbon nanotube junctions deposited on at least one microelectronic substrate. In another preferred embodiment, the present invention provides a device comprising a substrate, at least one pair of electrodes disposed on the substrate, wherein one or more pairs of electrodes are connected to a power source, and a bundle of carbon nanotubes disposed between the at least one pair of electrodes wherein the bundle of carbon nanotubes consist essentially of semiconductive carbon nanotubes. In another preferred embodiment, a semiconducting device formed by electrodeposition of carbon nanotubes between two electrodes is provided. The invention also provides preferred methods of forming a semiconductive device by applying a bias voltage to a carbon nanotube rope.

Abstract: A nanoelectrode array comprises a plurality of nanoelectrodes wherein the geometric dimensions of the electrode controls the electrochemical response, and the current density is independent of time. By combining a massive array of nanoelectrodes in parallel, the current signal can be amplified while still retaining the beneficial geometric advantages of nanoelectrodes. Such nanoelectrode arrays can be used in a sensor system for rapid, non-contaminating field analysis. For example, an array of suitably functionalized nanoelectrodes can be incorporated into a small, integrated sensor system that can identify many species rapidly and simultaneously under field conditions in high-resistivity water, without the need for chemical addition to increase conductivity.

Abstract: A method is provided for producing a permeable membrane, comprising the steps of aligning a plurality of hollow nanotubules to form a mat, coating the mat with a continuous polymer matrix to form a membrane. The membrane is etched (a) to open the plurality of hollow nanotubules and form pores and (b) to oxidize the carboxyl groups to carboxylate groups. At least one additional functional unit having at least one available amine group to bind the at least one additional functional unit to the nanotubule end carboxylate group may be provided. Membranes fabricated in accordance with the method of the invention are provided also.

Abstract: The present invention provides nanoprisms etched to generate triangular framework structures. These triangular nanoframes possess no strong surface plasmon bands in the ultraviolet or visible regions of the optical spectrum. By adding a mild reducing agent, metal ions remaining in solution can be reduced, resulting in metal plating and reformation of nanoprisms. The extent of the backfilling process can be controlled, allowing the formation of novel nanoprisms with nanopores. This back-filling process is accompanied by a regeneration of the surface plasmon bands in the UV-visible spectrum.

Abstract: Methods for fabricating a nanowire array epoxy composite with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of approximately 20% and power density of about 104 W/m2 with a maximum temperature below about 380° C. Further, a method includes fabricating a self-supporting thick 3-D interconnected nanowire array with high structural integrity and low effective thermal conductivity to achieve a power conversion efficiency goal of 20% and power density of about 104 W/m2 with a maximum temperature of about 700° C., the nanowire array having substantially only air between nanowires.

Abstract: A method for fabrication of nanometer scale metal fibers, followed by optional further processing into cables, yarns and textiles composed of the primary nanofibers. A multicomponent composite is first formed by drilling a billet of matrix metal, and inserting rods of the metal desired as nanofibers. Hexed or round rods can also be inserted into a matrix metal can. The diameter of this composite is then reduced by mechanical deformation methods. This composite is then cut to shorter lengths and reinserted into another billet of matrix metal, and again the diameter is reduced by mechanical deformation. This process of large scale metal stacking followed by mechanical deformation is repeated until the desired fiber size scale is reached, the fibers being contained in the matrix metal. After size reduction, the composite metal wires may be further processed into built up configurations, depending on intended application, by stranding, cabling, braiding, weaving, knitting, felting, etc.

Abstract: Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components.

Abstract: Methods for preparing nanocrystalline-Si/SiO2 composites by treating hydrogen silsesquioxane (HSQ) under reductive thermal curing conditions are described. Also described are methods of preparing silicon nanoparticles by acid etching the nanocrystalline-Si/SiO2 composites.

Abstract: This application describes a novel method of fabricating narrow (2-100 nm) width and long (greater than 50 micrometers and preferably 1 centimeter or longer) yet continuous hollow channels that allow flow of fluid or gas, or their combination. It can optimally include RIE pattern transfer or an optional sealing of a top surface over the channel. The invention also includes a novel method for making an imprint mold for imprinting the channel.

Abstract: The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing a beam of energy at the selected regions, exposing the structure at the selected regions. A material layer is then deposited on top of the solid condensate layer and the exposed structure at the selected regions. Then the solid condensate layer and regions of the material layer that were deposited on the solid condensate layer are removed, leaving a patterned material layer on the structure.

Abstract: Means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate comprising a network of nanostructures. Prior or subsequent to cleavage from the substrate, the nanostructures can be activated by an activation means such as exposing their surfaces to a plasma, oxidation or ion implantation. In some embodiments, the surface activation renders the nanostructures more hydrophilic, thereby facilitating functionalization of the nanoparticles for either in vitro or in vivo use.

Abstract: Embodiments of the invention include methods of etching nanodots, to methods of removing nanodots from substrates, and to methods of fabricating integrated circuit devices. In one embodiment, a method of etching nanodots that include a late transition metal includes exposing such nanodots to a gas comprising a phosphorus and halogen-containing compound and an oxidizing agent. After the exposing, the nanodots which are remaining and were exposed are etched (either partially or completely) with an aqueous solution comprising HF.

Abstract: Nanometrology device standards and methods for fabricating and using such devices in conjunction with scanning probe microscopes are described. The fabrication methods comprise: (1) epitaxial growth that produces nanometer sized islands of known morphology, structural, morphological and chemical stability in typical nanometrology environments, and large height-to-width nano-island aspect ratios, and (2) marking suitable crystallographic directions on the device for alignment with a scanning direction.

Abstract: Methods of patterning a self-assembly nano-structure and forming a porous dielectric are disclosed. In one aspect, the method includes providing a hardmask over an underlying layer; predefining an area with a photoresist on the hardmask that is to be protected during the patterning; forming a layer of the copolymer over the hardmask and the photoresist; forming the self-assembly nano-structure from the copolymer; and etching to pattern the self-assembly nano-structure.

Abstract: A metal-supported porous carbon film wherein metal fine particles with a mean particle diameter of 0.7-20 nm are dispersed and supported on pore surface walls, fuel cell electrodes employing the metal-supported porous carbon film, a membrane-electrode assembly comprising the fuel cell electrodes bonded on both sides of a polymer electrolyte film, and a fuel cell comprising the fuel cell electrode as a constituent element. The support structure is such that metal fine particles having a controlled particle size are uniformly supported to allow effective utilization of the metal-based catalyst, and the fabrication steps are simple.

Abstract: Substantially enhanced field emission properties are achieved by using a process of covering a non-adhesive material (for example, paper, foam sheet, or roller) over the surface of the CNTs, pressing the material using a certain force, and removing the material.

Abstract: It is the aim of the invention to provide a technology for the stimulation of the crystallization of biomolecules contained in a liquid solution that leads to significant improvements in the reliability of crystal growth processes and shortens the time and the number of attempts to grow a certain biomolecule crystal, also under the condition that only very small amounts of the biomolecules are available.

Abstract: Manufacturing methods of using a metal imprint technique for growing carbon nanotubes on selective areas and the structures formed thereof are provided. One of the manufacturing methods includes steps of forming a first substrate with tapered structures applied with a metal catalyst, imprinting a second substrate on the first substrate for being a growth substrate, and growing carbon nanotubes on the growth substrate. The other manufacturing method includes steps of forming a first substrate with tapered structures, imprinting the first substrate on a second substrate applied with a metal catalyst for forming a second growth substrate, and growing carbon nanotubes on the second grown substrate. And, the formed structures of the present invention include a substrate, plural carbon nanotubes, and plural imprinted vestiges.