Abstract: In a method for processing a nanotube, a vapor is condensed to a solid condensate layer on a surface of the nanotube and then at least one selected region of the condensate layer is locally removed by directing a beam of energy at the selected region. The nanotube can be processed with at least a portion of the solid condensate layer maintained on the nanotube surface and thereafter the solid condensate layer removed. Nanotube processing can include, e.g., depositing a material layer on an exposed nanotube surface region where the condensate layer was removed. After forming a solid condensate layer, an electron beam can be directed at a selected region along a nanotube length corresponding to a location for cutting the nanotube, to locally remove the condensate layer at the region, and an ion beam can be directed at the selected region to cut the nanotube at the selected region.

Abstract: The use of a photocurable perfluoropolyether (PFPE) material for fabricating a solvent-resistant PFPE-based microfluidic device, methods of flowing a material and performing a chemical reaction in a solvent-resistant PFPE-based microfluidic device, and the solvent-resistant PFPE-based microfluidic devices themselves are described. In an embodiment, a method is described for preparing a patterned layer of a photocured perfluoropolyether, the method comprising: (a) providing a substrate, wherein the substrate comprises a patterned surface; (b) contacting a perfluoropolvether precursor with the patterned surface of the substrate; and (c) photocuring the perfluoropolyether precursor to form a patterned layer of a photocured perfluoropolyether.

Abstract: Some embodiments include methods of forming patterns utilizing copolymer. A copolymer composition is formed across a substrate. The composition includes subunits A and B, and will be self-assembled to form core structures spaced center-to-center by a distance of L0. The core structures are contained within a repeating pattern of polygonal unit cells. Distances from the core structures to various locations of the unit cells are calculated to determine desired distributions of subunit lengths.

Abstract: Methods of fabricating porous silicon by electrochemical etching and subsequent coating with a passivating agent process are provided. The coated porous silicon can be used to make anodes and batteries. It is capable of alloying with large amounts of lithium ions, has a capacity of at least 1000 mAh/g and retains this ability through at least 60 charge/discharge cycles. A particular pSi formulation provides very high capacity (3000 mAh/g) for at least 60 cycles, which is 80% of theoretical value of silicon. The Coulombic efficiency after the third cycle is between 95-99%. The very best capacity exceeds 3400 mAh/g and the very best cycle life exceeds 240 cycles, and the capacity and cycle life can be varied as needed for the application.

Abstract: Tunable plasmon resonant cavity arrays in paired parallel nanowire waveguides are presented. Resonances can be observed when the waveguide length is an odd multiple of quarter plasmon wavelengths, consistent with boundary conditions of node and antinode at the ends. Two nanowire waveguides can satisfy the dispersion relation of a planar metal-dielectric-metal waveguide of equivalent width equal to the square field average weighted gap. Confinement factors of over 103 are possible due to plasmon focusing in the inter-wire space.

Abstract: Crystalline noble metal nanostructures and methods for their preparation.

Abstract: Among other things, methods, systems and apparatus are described for implementing nanomotor-based micro- and nanofabrication. In one aspect, a method of fabricating nanoobjects comprises functionalizing a nanomotor with a reagent. The method also includes controlling a movement of the functionalized nanomotor in a solution containing material to react with the reagent to induce a localized deposition or precipitation of a product onto a surface of a substrate or etching of the substrate.

Abstract: Provided are methods of preparing a textured surface on a thermoplastic material that include treating the material with a plasma and subsequently shrinking the substrate to induce formation of textures.

Abstract: Disclosed is a method for making graphene nanoribbons (GNRs) by controlled unzipping of structures such as carbon nanotubes (CNTs) by etching (e.g., argon plasma etching) of nanotubes partly embedded in a polymer film. The GNRs have smooth edges and a narrow width distribution (2-20 nm). Raman spectroscopy and electrical transport measurements reveal the high quality of the GNRs. Such a method of unzipping CNTs with well-defined structures in an array will allow the production of GNRs with controlled widths, edge structures, placement and alignment in a scalable fashion for device integration. GNRs may be formed from nanostructures in a controlled array to form arrays of parallel or overlapping structures. Also disclosed is a method in which the CNTs are in a predetermined pattern that is carried over and transferred to a substrate for forming into a semiconductor device.

Abstract: Applicant discloses multifunctional, highly active oxidation catalysts and methods of making such catalysts. Such methods include providing nanoparticles comprising titanium-oxo and zinc-oxo compositions, such as crystalline anatase titania nanoparticles with zinc-oxo domains on their surfaces, and etching the nanoparticles. The method also includes depositing catalytically active gold onto the nanoparticles, by, for example, physical vapor deposition.

Abstract: A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer.

Abstract: A nano particle tracking device includes a channel structure. The channel structure of the nano particle tracking device includes a pair of microchannels in which a specimen including nano particles is accommodated and which face each other, at least one nano channel which is between the pair of microchannels, which connects the pair of microchannels to each other and through which the nano particles in the specimen are moved, and a nano grating below the nano channel and crossing the nano channel perpendicularly.

Abstract: Embodiments of the invention provide, among other things, a method of preparing nanoparticles including silicon nanoparticles. A mixture is prepared that includes auric acid (HAuCl4) and HF. A silicon substrate is exposed to the prepared mixture to treat the silicon substrate. The treated silicon substrate is immersed in an etchant mixture, wherein nanoparticles are formed on a surface of the substrate. The nanoparticles are recovered from the substrate.

Abstract: A method is provided for fabricating a nanochannel. The method comprises providing a microchannel and controlling collapse of the microchannel so that it collapses to form a nanochannel of desired dimensions. The method employs a collapsible, flexible material such as the elastomer polydimethylsiloxane (PDMS) to form the nanochannel. A master is provided that is configured to have geometric conditions that promote a desired frequency of microchannel collapse. A collapsible material having a stiffness that also promotes a desired frequency of microchannel collapse is molded on the master. The molded collapsible material is removed from the master and bonded to a base, thereby forming the microchannel, which then collapses (or is collapsed) to form the nanochannel of desired dimensions. Nanofluidic and microfluidic devices comprising complex nanochannel structures and micro to nanochannel transitions are also provided.

Abstract: Reactive system comprising at least one component (I) composed of particles in very finely divided form present in a liquid phase of at least one further component (II) with which component (I) is capable of reacting following activation through energy supply, wherein component (I) is not soluble in component (II), process for preparation and use.

Abstract: A method of controlling wetting characteristics is described. Such method includes forming and configuring nanostructures on a surface where controlling of the wetting characteristics is desired. Surfaces and methods of fabricating such surfaces are also described.

Abstract: A semiconductor structure including an ordered array of parallel graphene nanoribbons located on a surface of a semiconductor substrate is provided using a deterministically assembled parallel set of nanowires as an etch mask. The deterministically assembled parallel set of nanowires is formed across a gap present in a patterned graphene layer utilizing an electric field assisted assembly process. A semiconductor device, such as a field effect transistor, can be formed on the ordered array of parallel graphene nanoribbons.

Abstract: In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ? of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order.

Abstract: A method is provided for forming narrow-waist nanowire (NW) transistors with wide aspect ratio ends. The method provides a semiconductor-on-insulator wafer. The top semiconductor layer is etched to form a first pad, a second pad, and a plurality of narrow-waist semiconductor bridges. Each semiconductor bridge has two ends, each with a first width, attached to the first and second pads, and a mid-section less than the first width. A channel is formed in a center portion of each mid-section, a drain interposed between the channel and the first end, a source interposed between the channel and the second end, and a gate dielectric surrounding the channel and adjacent portions of the source and drain. A gate electrode is formed surrounding the gate dielectric. The semiconductor bridge ends are etched from the first and second pads, forming a plurality of narrow-waist semiconductor NW transistors.

Abstract: A method for detecting single molecule includes providing a carrier. The carrier includes a substrate and a metal layer. The substrate has a surface and defines a number of blind holes caved in the substrate from the surface thereof. The metal layer covers the surface of the substrate and inner surfaces of the number of blind holes. Single molecule samples are disposed on the metal layer. The single molecule samples are detected by a Raman Spectroscopy system.

Abstract: In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire.

Abstract: A method of forming an array of selectively shaped optical elements on a substrate, the method including the steps of providing the substrate, the substrate having an optical layer placed thereon; placing a layer of particles on the optical layer; performing an etching cycle. The cycle includes the steps of: etching the layer of particles, using a first etching process so as to reduce the size of the particles within the layer, then; simultaneously etching the optical layer and the layer of particles, using a second etching process, the further reducing particles forming a mask over areas of the optical layer to create discrete optical elements from the optical layer.

Abstract: A nanopatterned surface is prepared by forming a block copolymer film on a miscut crystalline substrate, annealing the block copolymer film, then reconstructing the surface of the annealed block copolymer film. The method creates a well-ordered array of voids in the block copolymer film that is maintained over a large area. The nanopatterned block copolymer films can be used in a variety of different applications, including the fabrication of high density data storage media.

Abstract: An artificial oxygen carrier (AOC) for use in the body. A first gas permeable first shell encloses an oxygen carrying agent. The first shell has a second oxygen carrying agent surrounding it, and there is a second gas permeable shell enclosing the second agent. The concentric shells are not subject to turbulent breakup, or chemical decomposition, do not release the agents.

Abstract: A simplified method for fabricating a solar cell device is provided. The solar cell device has silicon nanowires (SiNW) grown on an upgraded metallurgical grade (UMG) silicon (Si) substrate. Processes of textured surface process and anti-reflection thin film process can be left out for further saving costs on equipment and manufacture investment. Thus, a low-cost Si-based solar cell device can be easily fabricated for wide application.

Abstract: The invention enables processing waste sludge after galvanic treatment of metals, and particularly recycling spent pickling acids after pickling. Provided is an environmentally friendly process, which yields acids for reuse, and pure nano-sized iron pigments as a side product.

Abstract: A method of etching active quantum nanostructures provides the step of laterally etching of an intermediate active quantum nanostructure layer interposed between cladding layers. The lateral etching can be carried out on at least one side of the intermediate active quantum nanostructure layer selectively, with respect to the cladding layers to define at least one lateral recess or spacing in the intermediate active quantum nanostructure layer and respective lateral protrusions of cladding layers protruding with respect to the intermediate active quantum nanostructure layer. This method can be applied to create devices including active quantum nanostructures such as, for example, three-dimensional photonic crystals, a photonic crystal double-slab and a photonic crystal laser.

Abstract: The invention relates to composite materials comprising polymer nanofibers and polymer nanoparticles, wherein at least one of the two polymer materials is loaded with a substance selected from therapeutic and diagnostic agents. Fibers and nanoparticles can comprise identical or different polymers; the polymer materials are, however, biocompatible in every case. Therapeutic and diagnostic agents can be hydrophilic or lipophilic and the two polymer materials likewise. The at least one polymer material and the substance with which said material is loaded are either both hydrophilic or both lipophilic. The polymer nanoparticles of the composite materials have a diameter of 10 nm to 600 nm. The polymer fibers have diameters of 10 nm to 50 ?m and lengths of 1 ?m to several meters. The invention further relates to a method for producing said composite materials.

Abstract: A method for manufacturing metal nanostructure which can manufacture a metal nanostructure which has the structure and properties different from the structure and properties of a conventional material and can be properly used in various applications is provided. The method for manufacturing metal nanostructure includes the steps of: preparing metal-coated organic nanofibers in which surfaces of the organic nanofibers are coated with metal; and preparing a metal nanostructure having the structure where the organic nanofibers are used as a template by removing organic components from the metal-coated organic nanofibers by heating the metal-coated organic nanofibers at a temperature ranging from 250° C. to 600° C.

Abstract: The present invention relates to a transparent glass body that comprises at least one antireflective glass surface (2) constructed on at least one surface of the transparent glass body and at least one glasslike protective coating (3) applied to the antireflective glass surface (2). The portion of reflected radiation ER is minimized and the transmitted radiation ET is increased accordingly. The contamination amount K can penetrate the antireflective surface only to a very reduced extent. Degradation caused by weathering is minimized. The present invention further relates to a method for the production as well as to uses of a transparent glass body.

Abstract: In one embodiment, Hexagonal tiles encompassing a large are divided into three groups, each containing ? of all hexagonal tiles that are disjoined among one another. Openings for the hexagonal tiles in each group are formed in a template layer, and a set of self-assembling block copolymers is applied and patterned within each opening. This process is repeated three times to encompass all three groups, resulting in a self-aligned pattern extending over a wide area. In another embodiment, the large area is divided into rectangular tiles of two non-overlapping and complementary groups. Each rectangular area has a width less than the range of order of self-assembling block copolymers. Self-assembled self-aligned line and space structures are formed in each group in a sequential manner so that a line and space pattern is formed over a large area extending beyond the range of order.

Abstract: Disclosed is a method for lithography etching a glass substrate. The method includes the steps of providing a glass substrate, providing miniature balls on the glass substrate so that the miniature balls become an etching-resistant layer, etching the glass substrate covered by the miniature balls to make a miniature pattern on the glass substrate, and removing the miniature balls from the substrate.

Abstract: The present invention provides methods for the manufacturing of metal nanowires using protein fibrils as biotemplates. The methods comprise use of a solvent providing a dual effect by promoting the formation of protein fibrils of suitable size as well as acting as a reducing agent. The invention further provides metal nanowires.

Abstract: Nanostructures and microstructures are formed by patterning methods such as Dip Pen Nanolithography (DPN) or microcontact printing of organic molecules functioning as a resist on a substrate followed by an etching step. The etch resist is a patterning composition and can contain on a substrate including polyethylene glycol (PEG). Positive and negative etch methods can be used.

Abstract: Lithographic and nanolithographic methods that involve patterning a first compound on a substrate surface, exposing non-patterned areas of the substrate surface to a second compound and removing the first compound while leaving the second compound intact. The resulting hole patterns can be used as templates for either chemical etching of the patterned area of the substrate or metal deposition on the patterned area of the substrate.

Abstract: A method for forming a silicon trench, comprises the steps of: defining an etching area at a silicon substrate; forming metal catalysts at the surface of the etching area; immersing the silicon substrate in a first etching solution thereby forming anisotropic silicon nanostructures in the etching area; immersing the silicon substrate in a second etching solution thereby resulting in the silicon nanostructures being side-etched and detached from the silicon substrate, thus forming the silicon trench.

Abstract: The self-assembly of polyhedral nanostructures having at least one dimension of about 100 nm to about 900 nm with electron-beam lithographically patterned surfaces is provided. The presently disclosed three-dimensional nanostructures spontaneous assemble from two-dimensional, tethered panels during plasma or wet chemical etching of the underlying silicon substrate. Any desired surface pattern with a width as small as fifteen nanometers can be precisely defined in all three dimensions. The formation of curving, continuous nanostructures using extrinsic stress also is disclosed.

Abstract: The invention relates to a nanoparticulate material comprising long ultrathin metal nanowires, and to processes for making it. The nanoparticulate material may be used as a catalyst and, in the presence of a chiral modifier, can catalyse enantioselective reactions.

Abstract: The present invention provides methods and devices for the fabrication of 3D polymeric fibers having micron, sub-micron, and nanometer dimensions, as well as methods of use of these polymeric fibers.

Abstract: In certain embodiments novel nanoparticles (nanowontons) are provided that are suitable for multimodal imaging and/or therapy. In one embodiment, the nanoparticles include a first biocompatible (e.g., gold) layer, an inner core layer (e.g., a non-biocompatible material), and a biocompatible (e.g., gold) layer. The first gold layer includes a concave surface that forms a first outer surface of the layered nanoparticle. The second gold layer includes a convex surface that forms a second outer surface of the layered nanoparticle. The first and second gold layers encapsulate the inner core material layer. Methods of fabricating such nanoparticles are also provided.

Abstract: A method of manufacturing a semiconductor device includes forming silicon line patterns in a semiconductor substrate, forming an insulating layer over the silicon line patterns, forming a conductive pattern between the silicon line patterns, forming a spacer over the substrate, forming an interlayer insulating layer between the silicon line patterns, removing the spacer on one side of the silicon line patterns to expose the conductive pattern, forming a bit line contact open region by removing the interlayer insulating layer, forming a polysilicon pattern to cover the bit line contact open region, and forming a junction region diffused to the silicon line pattern through the bit line contact open region. Thereby, a stacked structure of a titanium layer and a polysilicon layer are stably formed when forming a buried bit line and a bit line contact is formed using diffusion of the polysilicon layer to prevent leakage current.

Abstract: A heat sinking element and a method of treating a heat sinking element are provided. The heat sinking element includes a metal substrate. The metal substrate is mainly composed of aluminium. A surface of the metal substrate has a plurality of micro-nano holes and a diameter of the micro-nano holes is smaller than 300 nm. The method of treating a heat sinking element includes performing an oxidation process and an etching process on the metal substrate so as to form the plurality of micro-nano holes.

Abstract: A method includes contacting a catalyst including a metal having an average particle size of approximately one nanometer or greater with SO2; and reducing the average particle size of the metal.

Abstract: The present invention relates to providing layers of different thickness on vertical and horizontal surfaces (15, 20) of a vertical semiconductor device (1). In particular the invention relates to gate electrodes and the formation of precision layers (28) in semiconductor structures comprising a substrate (10) and an elongated structure (5) essentially standing up from the substrate. According to the method of the invention the vertical geometry of the device (1) is utilized in combination with either anisotropic deposition or anisotropic removal of deposited material to form vertical or horizontal layers of very high precision.

Abstract: A carbon nanosphere has at least one opening. The carbon nanosphere is obtained by preparing a carbon nanosphere and treating it with an acid to form the opening. The carbon nanosphere with at least one opening has higher utilization of a surface area and electrical conductivity and lower mass transfer resistance than a conventional carbon nanotube, thus allowing for higher current density and cell voltage with a smaller amount of metal catalyst per unit area of a fuel cell electrode.

Abstract: A method for fabricating a magnetoresistive random access memory (MRAM) includes forming a mask over a magnetic layer; forming a template on the mask; applying a diblock copolymer to the template; curing the diblock copolymer to form a first plurality of uniform shapes registered to the template; etching the mask to form a second plurality of uniform shapes; and etching the magnetic layer to form a third plurality of uniform shapes, the third plurality of uniform shapes comprising a plurality of magnetic tunnel junctions (MTJs). A diblock copolymer mask for fabricating a magnetoresistive random access memory (MRAM) includes a magnetic layer; a mask formed on the magnetic layer; a template formed on the mask; and a diblock copolymer mask comprising a plurality of uniform shapes formed on and registered to the template.

Abstract: Nanoporous substrate with fine pores having a diameter from 3 to 40 nm arranged with less than 60 nm periodicity is prepared by a method comprising the steps of coating amphipathic block copolymer on a substrate, forming a film containing hydrophilic cylinders aligned perpendicularly to the surface of the film on a substrate, and immersing the substrate into a solution containing an etchant.

Abstract: In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.

Abstract: The present invention relates to the self-assembly of a spherical-morphology block copolymer into V-shaped grooves of a substrate. Although spherical morphology block copolymers typically form a body-centered cubic system (bcc) sphere array in bulk, the V-shaped grooves promote the formation of a face-centered cubic system (fcc) sphere array that is well ordered. In one embodiment, the (111) planes of the fcc sphere array are parallel to the angled side walls of the V-shaped groove. The (100) plane of the fcc sphere array is parallel to the top surface of the substrate, and may show a square symmetry among adjacent spheres. This square symmetry is unlike the hexagonal symmetry seen in monolayers of spherical domains and is a useful geometry for lithography applications, especially those used in semiconductor applications.

Abstract: In accordance with the invention, a lateral dimension of a microscale device on a substrate is reduced or adjusted by the steps of providing the device with a soft or softened exposed surface; placing a guiding plate adjacent the soft or softened exposed surface; and pressing the guiding plate onto the exposed surface. Under pressure, the soft material flows laterally between the guiding plate and the substrate. Such pressure induced flow can reduce the lateral dimension of line spacing or the size of holes and increase the size of mesas. The same process also can repair defects such as line edge roughness and sloped sidewalls. This process will be referred to herein as pressed self-perfection by liquefaction or P-SPEL.