Deposition Of Materials (e.g., Coating, Cvd, Or Ald, Etc.) Patents (Class 977/890)
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Publication number: 20140264279Abstract: Selective epitaxy of a semiconductor material is performed on a semiconductor fin to form a semiconductor nanowire. Surfaces of the semiconductor nanowire include facets that are non-horizontal and non-vertical. A gate electrode can be formed over the semiconductor nanowire such that the faceted surfaces can be employed as channel surfaces. The epitaxially deposited portions of the faceted semiconductor nanowire can apply stress to the channels. Further, an additional semiconductor material may be added to form an outer shell of the faceted semiconductor nanowire prior to forming a gate electrode thereupon. The faceted surfaces of the semiconductor nanowire provide well-defined charge carrier transport properties, which can be advantageously employed to provide a semiconductor device with well-controlled device characteristics.Type: ApplicationFiled: March 14, 2013Publication date: September 18, 2014Applicant: International Business Machines CorporationInventors: Kangguo Cheng, Juntao Li, Zhen Zhang, Yu Zhu
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Publication number: 20140262454Abstract: Zinc salts have been found to provide anticorrosion properties when incorporated into silver nanowire containing films. Such salts may be incorporated into one of more silver nanowire containing layers or in one or more layers disposed adjacent to the silver nanowire containing layers.Type: ApplicationFiled: February 18, 2014Publication date: September 18, 2014Inventors: Chaofeng Zou, James B. Philip, JR., Brian C. Willett
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Publication number: 20140273450Abstract: A method of arranging a diamagnetic rod includes levitating a diamagnetic rod above a contact line at which a first magnet contacts a second magnet, the first magnet and the second magnet having diametric magnetization in a direction perpendicular to the contact line.Type: ApplicationFiled: August 16, 2013Publication date: September 18, 2014Applicant: International Business Machines CorporationInventors: Qing Cao, Oki Gunawan
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Publication number: 20140273449Abstract: A system for self-aligning diamagnetic materials includes first and second magnets contacting each other along a contact line and having a diametric magnetization perpendicular to the contact line and a diamagnetic rod positioned to levitate above the contact line of the first and second magnets.Type: ApplicationFiled: March 13, 2013Publication date: September 18, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Qing Cao, Oki Gunawan
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Patent number: 8834686Abstract: A metallic nanoparticle coated microporous substrate, the process for preparing the same and uses thereof are described.Type: GrantFiled: January 11, 2010Date of Patent: September 16, 2014Assignee: 3M Innovative Properties CompanyInventors: Donald J. McClure, Mario A. Perez
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Publication number: 20140252274Abstract: Quantum dot delivery methods are described. In a first example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles. The method also involves forming a dispersion of the plurality of nano-particles in a medium for delivery or storage, wherein the medium is free of organic solvent. In a second example, a method of delivering or storing a plurality of nano-particles involves providing a plurality of nano-particles in an organic solvent. The method also involves drying the plurality of nano-particles for delivery or storage, the drying removing entirely all of the organic solvent.Type: ApplicationFiled: March 4, 2014Publication date: September 11, 2014Inventors: Georgeta Masson, Kari N. Haley, Brian Theobald, Benjamin Daniel Mangum, Juanita N. Kurtin
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Patent number: 8828544Abstract: A process for depositing nanostructured material onto a particulate substrate material comprising the steps of: a) preparing a precursor material; b) forming an atomized dispersion containing nanophased material when subjecting said precursor material to elevated temperature; and c) contacting the atomized dispersion with the substrate material to deposit the nanophased material on the substrate material. The substrate material is in mobile and particulate form for contacting step (c). An apparatus for carrying out the process is also disclosed.Type: GrantFiled: April 19, 2010Date of Patent: September 9, 2014Assignee: Commonwealth Scientific And Industrial Research OrganisationInventors: Kok Seng Lim, Jonian Ivanov Nikolav
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Patent number: 8828239Abstract: A fabrication method for a flexible porous free-standing protein membrane formed by cross-linked protein includes (1) mixing nanostructured materials and protein to obtain a composite made of protein and nanostructured materials (for example metal hydroxide nanostrands); (2) forming a membranous body formed by the composite made of protein and nanostructured materials, and mutually cross-linking the protein by a cross-linker; and (3) dissolving and removing the nanostructured materials to produce a flexible porous free-standing protein membrane.Type: GrantFiled: January 8, 2010Date of Patent: September 9, 2014Assignee: National Institute for Materials ScienceInventors: XinShen Peng, Izumi Ichinose
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Publication number: 20140246811Abstract: The disclosure related to a method for making a nanowire structure. First, a free-standing carbon nanotube structure is suspended. Second, a metal layer is coated on a surface of the carbon nanotube structure. The metal layer is oxidized to grow metal oxide nanowires.Type: ApplicationFiled: May 14, 2014Publication date: September 4, 2014Applicants: HON HAI PRECISION INDUSTRY CO., LTD., TSINGHUA UNIVERSITYInventors: JIA-PING WANG, KAI-LI JIANG, QUN-QING LI, SHOU-SHAN FAN
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Patent number: 8821675Abstract: A method for making a carbon nanotube micro-tip structure is disclosed. A carbon nanotube film structure and an insulting substrate are provided. The insulating substrate includes a surface. At least one strip-shaped recess is defined at the surface. The carbon nanotube film structure is covered on the surface of the insulating substrate, and has a suspended portion covered on the at least one strip-shaped recess. The suspended portion of the carbon nanotube film structure is laser etched, to define a first hollow pattern in the suspended portion and form a patterned carbon nanotube film structure according to the first hollow pattern. The patterned carbon nanotube film structure includes two strip-shaped arms. The two strip-shaped arms are joined at one end to form a tip portion. The tip portion is suspended above the strip-shaped recess.Type: GrantFiled: August 23, 2012Date of Patent: September 2, 2014Assignees: Tsinghua University, Hon Hai Precision Industry Co., Ltd.Inventors: Yang Wei, Shou-Shan Fan
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Patent number: 8813777Abstract: An electrophoretic fluid separation structure (100) comprising a substrate (101) and a plurality of vertical nanowires (102) grown on the substrate (101).Type: GrantFiled: April 17, 2008Date of Patent: August 26, 2014Assignee: NXP, B.V.Inventors: Pablo Garcia Tello, Vijaraghavan Madakasira
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Patent number: 8809678Abstract: CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group 13 and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stoichiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).Type: GrantFiled: May 7, 2012Date of Patent: August 19, 2014Assignee: aeris CAPITAL Sustainable IP Ltd.Inventors: Brian M. Sager, Dong Yu, Matthew R. Robinson
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Publication number: 20140221199Abstract: The present invention discloses stable, non-agglomerated, ultra-small metal/alloy clusters encapsulated in silica with the metal/alloy cluster size of less than 5 nm. The invention further discloses a simple, cost effective process for the preparation of metal/alloy clusters encapsulated in silica which is thermally stable and without agglomeration.Type: ApplicationFiled: April 11, 2012Publication date: August 7, 2014Applicant: COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCHInventors: Nandini R. Devi, Anupam Samanta
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Publication number: 20140220771Abstract: A process of manufacturing a Write-Once-Read-Many-times memory, at least includes the following steps: (A) providing a substrate as a lower electrode; (B) depositing a first oxide layer on the substrate; (C) depositing at least one or more silicon/germanium (Si/Ge) layers on the first oxide layer; (D) depositing a second oxide layer on the at least one or more Si/Ge layers; (E) carrying out a rapid thermal annealing to form SiGe nanocrystals embedded in the first dioxide layer and the second oxide layer; and (F) depositing a conductive layer on the second oxide layer as an upper electrode. The SiGe nanocrystals embedded in the Al2O3 bilayer as the active layer of the WORM memory offers high thermal stability, so that low operating voltage, fast writing, ideal reading durability, persistence at high temperature, and the highly reliable memory performance for effectively reading data at high temperature can be achieved.Type: ApplicationFiled: February 5, 2013Publication date: August 7, 2014Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Yung-Hsien Wu, Min-Lin Wu
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Patent number: 8790863Abstract: In a method for imaging a solid state substrate, a vapor is condensed to an amorphous solid water condensate layer on a surface of a solid state substrate. Then an image of at least a portion of the substrate surface is produced by scanning an electron beam along the substrate surface through the water condensate layer. The water condensate layer integrity is maintained during electron beam scanning to prevent electron-beam contamination from reaching the substrate during electron beam scanning. Then one or more regions of the layer can be locally removed by directing an electron beam at the regions. A material layer can be deposited on top of the water condensate layer and any substrate surface exposed at the one or more regions, and the water condensate layer and regions of the material layer on top of the layer can be removed, leaving a patterned material layer on the substrate.Type: GrantFiled: October 26, 2011Date of Patent: July 29, 2014Assignee: President and Fellows of Harvard CollegeInventors: Daniel Branton, Anpan Han, Jene A. Golovchenko
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Publication number: 20140202860Abstract: A non-volatile bistable nano-electromechanical switch is provided for use in memory devices and microprocessors. The switch employs carbon nanotubes as the actuation element. A method has been developed for fabricating nanoswitches having one single-walled carbon nanotube as the actuator. The actuation of two different states can be achieved using the same low voltage for each state.Type: ApplicationFiled: December 26, 2013Publication date: July 24, 2014Applicant: Northeastern UniversityInventors: Sivasubramanian Somu, Ahmed Busnaina, Nicol McGruer, Peter Ryan, George G. Adams, Xugang Xiong, Taehoon Kim
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Patent number: 8778195Abstract: A method to fabricate an imprint mould in three dimensions including at least: a) forming at least one trench, of width W and depth h, in a substrate, thereby forming three surfaces including, a bottom of the at least one trench, sidewalls of the at least one trench, and a remaining surface of the substrate, called top of the substrate; b) forming alternate layers in the at least one trench, each having at least one portion perpendicular to the substrate, in a first material and in a second material which can be selectively etched relative to the first material; and c) selectively etching said portions of the layers perpendicular to the substrate.Type: GrantFiled: March 2, 2010Date of Patent: July 15, 2014Assignee: Commissariat a l' Energie AtomiqueInventor: Stéfan Landis
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Patent number: 8778715Abstract: A method of making a neutron detector such as a microstructured semiconductor neutron detector is provided. The method includes the step of providing a particle-detecting substrate having a surface and a plurality of cavities extending into the substrate from the surface. The method also includes filling the plurality of cavities with a neutron-responsive material. The step of filling including the step of centrifuging nanoparticles of the neutron-responsive material with the substrate for a time and a rotational velocity sufficient to backfill the cavities with the nanoparticles. The material is responsive to neutrons absorbed, thereby, for releasing ionizing radiation reaction products.Type: GrantFiled: June 24, 2013Date of Patent: July 15, 2014Assignee: Radiation Detection Technologies, Inc.Inventors: Steven L. Bellinger, Ryan G. Fronk, Douglas S. McGregor
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Publication number: 20140174155Abstract: The present invention provides a hybrid nanomaterial electrode, comprising a pair of spaced-apart electrodes, at least three pairs of metallic nanowires disposed between the electrodes and respectively connected with the electrodes, and at least a detecting material connecting with the metallic nanowires. The detecting material is formed as a semiconductor nanostructure or a conductor nanostructure. The hybrid nanomaterial electrode of the present invention can be used in a gas detector for detecting volatile organic compounds, and has the advantage of providing high sensitivity, low detection limit, and the ability to operate at room temperature.Type: ApplicationFiled: May 1, 2013Publication date: June 26, 2014Applicant: NATIONAL TSING HUA UNIVERSITYInventors: CHIEN-CHONG HONG, ZI-XIANG LIN, KUO-CHU HWANG
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Publication number: 20140175422Abstract: Anisotropic materials, such as rutile TiO2, can exhibit dielectric constant of 170 along the tetragonal axis of (001) direction, and dielectric constant of 86 along directions perpendicular to the tetragonal axis. Layer of anisotropic material nanorods, such as TiO2 nanorods, can form a seed layer to grow a dielectric layer that can exhibit the higher dielectric constant value in a direction parallel to the substrate surface. The anisotropic layer can then be patterned to expose a surface normal to the high dielectric constant direction. A conductive material can be formed in contact with the exposed surface to create an electrode/dielectric stack along the direction of high dielectric constant.Type: ApplicationFiled: December 20, 2012Publication date: June 26, 2014Applicant: INTERMOLECULAR, INC.Inventors: Sergey Barabash, Dipankar Pramanik
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Publication number: 20140170789Abstract: Ceramic compositions having a dispersion of nano-particles therein and methods of fabricating ceramic compositions having a dispersion of nano-particles therein are described. In an example, a method of forming a composition having a dispersion of nano-particles therein includes forming a mixture of semiconductor nano-particles and ceramic precursor molecules. A ceramic matrix is formed from the ceramic precursor molecules. The ceramic matrix includes a dispersion of the semiconductor nano-particles therein. In another example, a composition includes a medium including ceramic precursor molecules. The medium is a liquid or gel at 25 degrees Celsius. A plurality of semiconductor nano-particles is suspended in the medium.Type: ApplicationFiled: October 16, 2013Publication date: June 19, 2014Inventors: Juanita N. KURTIN, Georgeta MASSON
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Patent number: 8753526Abstract: The present application relates to a porous thin film having holes, wherein the holes are formed in the top part and/or the bottom part of the thin film and the holes are linked to the pores of the thin film; and the present invention also relates to a production method for a porous thin film having holes, comprising the use of a particle alignment layer as a mold.Type: GrantFiled: August 9, 2011Date of Patent: June 17, 2014Assignee: Industry-University Cooperation Foundation Sogang UniversityInventors: Kyung Byung Yoon, Hyun Sung Kim, Myunpyo Hong, Na Pi Ha
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Publication number: 20140158551Abstract: Sensors, processes for manufacturing the sensors, and processes of detecting a target molecule with the sensor generally includes a substrate including a channel and first and second electrodes electrically connected to the channel, wherein the channel includes a monolayer of surface functionalized graphene or surface functionalized carbon nanotubes, wherein the surface functionalized graphene or surface functionalized carbon nanotubes include an imidazolidone compound.Type: ApplicationFiled: December 6, 2012Publication date: June 12, 2014Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Ali Afzali-Ardakani, Shu-Jen Han
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Publication number: 20140162390Abstract: Sensors, processes for manufacturing the sensors, and processes of detecting a target molecule with the sensor generally includes a substrate including a channel and first and second electrodes electrically connected to the channel, wherein the channel includes a monolayer of surface functionalized graphene or surface functionalized carbon nanotubes, wherein the surface functionalized graphene or surface functionalized carbon nanotubes include an imidazolidone compound.Type: ApplicationFiled: August 20, 2013Publication date: June 12, 2014Applicant: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Shu-Jen Han
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Patent number: 8747903Abstract: The present invention relates to a composition for nucleic acid delivery and a method for preparing the same, more particularly to a composition for nucleic acid delivery having excellent stability in the body environment and excellent intracellular delivery efficiency of nucleic acid, and enabling target directed delivery of nucleic acid, and a method for preparing the same.Type: GrantFiled: March 27, 2012Date of Patent: June 10, 2014Assignee: Postech Academy-Industry FoundationInventors: Sei Kwang Hahn, Min-Young Lee, Kitae Park, Ki Su Kim, Hwiwon Lee
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Publication number: 20140151705Abstract: A method is provided for fabricating a nanowire-based semiconductor structure. The method includes forming a first nanowire with a first polygon-shaped cross-section having a first number of sides. The method also includes forming a semiconductor layer on surface of the first nanowire to form a second nanowire with a second polygon-shaped cross-section having a second number of sides, the second number being greater than the first number. Further, the method includes annealing the second nanowire to remove a substantial number of vertexes of the second polygon-shaped cross-section to form the nanowire with a non-polygon-shaped cross-section corresponding to the second polygon-shaped cross-section.Type: ApplicationFiled: March 15, 2013Publication date: June 5, 2014Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP.Inventors: DEYUAN XIAO, JAMES HONG
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Publication number: 20140155253Abstract: Two methods of producing nano-pads of catalytic metal for growth of single walled carbon nanotubes (SWCNT) are disclosed. Both methods utilize a shadow mask technique, wherein the nano-pads are deposited from the catalytic metal source positioned under the angle toward the vertical walls of the opening, so that these walls serve as a shadow mask. In the first case, the vertical walls of the photo-resist around the opening are used as a shadow mask, while in the second case the opening is made in a thin layer of the dielectric layer serving as a shadow mask. Both methods produce the nano-pad areas sufficiently small for the growth of the SWCNT from the catalytic metal balls created after high temperature melting of the nano-pads.Type: ApplicationFiled: February 21, 2012Publication date: June 5, 2014Inventor: Alexander Kastalsky
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Patent number: 8741152Abstract: A method for fabricating a flexible free-standing ultrathin (nano) or thin protein membrane that includes (1) keeping a dilute metal (Cd, Cu or Zn) nitrate or chloride solution under neutral or weak basic pH to spontaneously form metal (Cd, Cu or Zn) hydroxide nanostrands; (2) mixing the metal (Cd, Cu or Zn) hydroxide nanostrands and protein solution to obtain composite nanofibers made of protein and the metal (Cd, Cu or Zn) hydroxide nanostrands; (3) filtering the obtained dispersion of composite nanofibers on a filter; (4) cross-linking the proteins contained in the composite nanofibers by a bifunctional cross-linker; and (5) removing the metal (Cd, Cu or Zn) hydroxide nanostrands.Type: GrantFiled: July 11, 2008Date of Patent: June 3, 2014Assignee: National Institute for Materials ScienceInventors: XinShen Peng, Izumi Ichinose
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Publication number: 20140144881Abstract: Provided is a nanowire manufacturing method, comprising forming a plurality of grid patterns on a substrate, forming a nanowire on the grid patterns, and separating the grid pattern and the nanowire. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.Type: ApplicationFiled: June 28, 2012Publication date: May 29, 2014Applicant: LG INNOTEK CO., LTD.Inventors: Young Jae Lee, Kyoung Jong Yoo, Jun Lee, Jin Su Kim, Jae Wan Park
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Publication number: 20140140054Abstract: Methods are provided for fabricating a multi-structure pore membrane. In one method, an anodized aluminum oxide (AAO) template is formed with an array of pores exposing underlying regions of a conductive layer top surface. A plurality of photoresist layers is patterned to sequentially expose a plurality of AAO template sections. Each exposed AAO template section is sequentially etched to widen pore diameters, so that each AAO template section may be associated with a corresponding unique pore diameter. A target material is deposited in the pores of the AAO template and, as a result, an array of target material structures is formed on the top surface, where the target material structures associated with each AAO template section have a corresponding diameter. Also provided is a multi-structure pixel device formed with subpixels having different structure dimensions.Type: ApplicationFiled: November 20, 2012Publication date: May 22, 2014Inventors: Akinori Hashimura, Douglas J. Tweet, Apostolos T. Voutsas
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Publication number: 20140134791Abstract: A method is provided for forming a solution-processed metal and mixed-metal selenide semiconductor using selenium (Se) nanoparticles (NPs). The method forms a first solution including SeNPs dispersed in a solvent. Added to the first solution is a second solution including a first material set of metal salts, metal complexes, or combinations thereof, which are dissolved in a solvent, forming a third solution. The third solution is deposited on a conductive substrate, forming a first intermediate film comprising metal precursors, from corresponding members of the first material set, and embedded SeNPs. As a result of thermally annealing, the metal precursors are transformed and the first intermediate film is selenized, forming a first metal selenide-containing semiconductor. In one aspect, the first solution further comprises ligands for the stabilization of SeNPs, which are liberated during thermal annealing.Type: ApplicationFiled: November 10, 2012Publication date: May 15, 2014Inventors: Sean Andrew VAIL, Alexey KOPOSOV, Jong-Jan LEE
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Publication number: 20140131201Abstract: The invention relates to a process of making ammonia gas indicator, using single wall carbon nanotubes (SWCNTs)/alumina (Al2O3) composite thick film, comprising the steps of (a) preparing a nanoporous SWCNTs/Al2O3 composite thick film of thickness in the range of 60 to 65?m prepared by sol-gel process; (b) curing the film at a temperature in the range of 450° C. to 500° C. for a time period in the range 0.5 to 2 hour to obtain a cured sample; (c) providing thick film planar electrodes of Ag—Pd paste on same side of the cured sample by screen printing; and (d) heat treating the resultant cured sample with electrodes at a temperature in the range of 800° C. to 850° C. for a time period in the range of 0.5 to 2 hours to obtain a gas indicator.Type: ApplicationFiled: October 10, 2013Publication date: May 15, 2014Applicants: Jamia Millia Islamia, Department of Electronics & Information TechnologyInventors: Prabhash Mishra, Saikh Saiful Islam, Kamalendu Sengupta
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Patent number: 8723209Abstract: Light emitting devices comprising an optical layer comprising metal oxide particles having a polymer covalently bonded thereto and a light emitting layer, which is in optical communication with the optical layer are provided. Methods of fabricating a light emitting devices comprising: depositing an optical layer comprising metal oxide particles having a polymer covalently bonded thereto; and depositing a light emitting layer, which is in optical communication with the optical layer are also provided.Type: GrantFiled: August 15, 2012Date of Patent: May 13, 2014Assignee: Universal Display CorporationInventors: Chuanjun Xia, Ruiqing Ma
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Publication number: 20140127488Abstract: A graphene oxide-coated graphitic foil, composed of a graphitic substrate or core layer having two opposed primary surfaces and at least a graphene oxide coating layer deposited on at least one of the two primary surfaces, wherein the graphitic substrate layer has a thickness preferably from 0.34 nm to 1 mm, and the graphene oxide coating layer has a thickness preferably from 0.5 nm to 1 mm and an oxygen content of 0.01%-40% by weight based on the total graphene oxide weight. The graphitic substrate layer may be preferably selected from flexible graphite foil, graphene film, graphene paper, graphite particle paper, carbon-carbon composite film, carbon nano-fiber paper, or carbon nano-tube paper. This graphene oxide-coated laminate exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.Type: ApplicationFiled: November 2, 2012Publication date: May 8, 2014Inventors: Aruna Zhamu, Mingchao Wang, Wei Xiong, Bor Z. Jang
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Publication number: 20140117292Abstract: A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSexS(1-x), wherein 0?x?1, and wherein an average mole ratio of Se:S in the monolayer shell ranges from about 2:1 to about 20:1.Type: ApplicationFiled: September 27, 2013Publication date: May 1, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Shin Ae JUN, Eun Joo JANG, Soo Kyung KWON, Taek Hoon KIM, Won Joo LEE
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Publication number: 20140116936Abstract: The manufacturing method of nano porous material according to an example of the present invention comprises: a preparing step to prepare a substrate; and a manufacturing step to prepare nano porous material with a network structure in which nanoclusters are connected to each other using plasma deposition through over 300 mTorr of working pressure. Using the manufacturing method, it is possible to form a nano porous material having desired surface energy without formation of additional coating layer as well as pores distributed both within and on the surface of the nano porous material with only one deposition process.Type: ApplicationFiled: August 22, 2013Publication date: May 1, 2014Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Seong Jin KIM, Myoung Woon MOON, Kwang Ryeol LEE, Won Kyung SEONG, Wei DAI
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Patent number: 8703235Abstract: In the method of embodiments of the invention, the metal seeded carbon allotropes are reacted in solution forming zero valent metallic nanowires at the seeded sites. A polymeric passivating reagent, which selects for anisotropic growth is also used in the reaction to facilitate nanowire formation. The resulting structure resembles a porcupine, where carbon allotropes have metallic wires of nanometer dimensions that emanate from the seed sites on the carbon allotrope. These sites are populated by nanowires having approximately the same diameter as the starting nanoparticle diameter.Type: GrantFiled: April 8, 2011Date of Patent: April 22, 2014Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: Robin E. Southward, Donavon Mark Delozier, Kent A. Watson, Joseph G. Smith, Sayata Ghose, John W. Connell
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Patent number: 8691335Abstract: Technologies are generally described for a system and process effective to coat a substance with graphene. A system may include a first container including graphene oxide and water and a second container including a reducing agent and the substance. A third container may be operative relationship with the first container and the second container. A processor may be in communication with the first, second and third containers. The processor may be configured to control the third container to receive the graphene oxide and water from the first container and to control the third container to receive the reducing agent and the substance from the second container. The processor may be configured to control the third container to mix the graphene oxide, water, reducing agent, and substance under sufficient reaction conditions to produce sufficient graphene to coat the substance with graphene to produce a graphene coated substance.Type: GrantFiled: February 8, 2012Date of Patent: April 8, 2014Assignee: Empire Technology Development, LLCInventor: Seth Adrian Miller
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Patent number: 8693094Abstract: A method for manufacturing a polarizer utilizes a support, which is coated with a photoresist. A carbon nanotube film is located over the photoresist, and one portion of the carbon nanotube film is submerged in the photoresist. Metal or semi-metallic particles are deposited over the carbon nanotube film and the photoresist, which is removed. The carbon nanotube film with the metal particles or semi-metallic particles is adhered to a substrate to obtain the polarizer.Type: GrantFiled: May 16, 2010Date of Patent: April 8, 2014Assignee: Hon Hai Precision Industry Co., Ltd.Inventor: Sei-Ping Louh
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Publication number: 20140087058Abstract: A method is provided that produces nanocomposite materials containing well-dispersed, nanoparticles encapsulated in a polymer matrix. A feedstock comprising a colloidal dispersion of nanoparticles in a solvent and a polymer dissolved in the same solvent is passed through an ultrasonic nozzle using a flow control device, producing an aerosol of drops having diameters less than about 100 micrometers. The aerosol of drops is then mixed with a fluid that is miscible with the solvent, is a nonsolvent for the polymer, and destabilizes the colloidal dispersion. As a result, well-dispersed polymer-encapsulated nanoparticles precipitate. The method operates at atmospheric temperature and pressure and allows for independent control of the precipitation of the particle and of the polymer.Type: ApplicationFiled: September 21, 2012Publication date: March 27, 2014Applicant: E I DU PONT DE NEMOURS AND COMPANYInventor: JEFFREY SCOTT METH
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Publication number: 20140083494Abstract: Provided are a method of forming metal oxide nanotube and a dye-sensitized solar cell formed thereby. The method may include providing a metal electrode and a counter electrode in an electrolyte containing a negatively polarized surfactant, and applying voltages to the metal electrode and the counter electrode to form a metal oxide nanotube on the metal electrode. The metal oxide nanotube may have a (001)-plane.Type: ApplicationFiled: February 15, 2013Publication date: March 27, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Mi Hee JUNG, Moo Jung Chu, Mangu Kang
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Publication number: 20140080293Abstract: A solar cell includes a plurality of nanowires arranged such that diameters of the nanowires sequentially increase in a first direction along a path of incident light. In a method of forming nanowires, a catalyst layer is formed on a substrate, a plurality of nanoparticles are formed by thermally processing the catalyst layer, and nanowires are grown from the plurality of nanoparticles. The catalyst layer has a thickness that increases in a first direction, and the plurality of nanoparticles have diameters that increase in the first direction.Type: ApplicationFiled: November 22, 2013Publication date: March 20, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-jun PARK, Chan-wook BAIK
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Publication number: 20140077121Abstract: A generic route for synthesis of asymmetric nanostructures. This approach utilizes submicron magnetic particles (Fe3O4—SiO2) as recyclable solid substrates for the assembly of asymmetric nanostructures and purification of the final product. Importantly, an additional SiO2 layer is employed as a mediation layer to allow for selective modification of target nanoparticles. The partially patched nanoparticles are used as building blocks for different kinds of complex asymmetric nanostructures that cannot be fabricated by conventional approaches. The potential applications such as ultra-sensitive substrates for surface enhanced Raman scattering (SERS) have been included.Type: ApplicationFiled: September 18, 2012Publication date: March 20, 2014Applicant: UChicago Argonne, LLCInventors: Yugang Sun, Yongxing Hu
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Patent number: 8664094Abstract: The present invention relates to the growing of nitride semiconductors, applicable for a multitude of semiconductor devices such as diodes, LEDs and transistors. According to the method of the invention nitride semiconductor nanowires are grown utilizing a CVD based selective area growth technique. A nitrogen source and a metal-organic source are present during the nanowire growth step and at least the nitrogen source flow rate is continuous during the nanowire growth step. The V/III-ratio utilized in the inventive method is significantly lower than the V/III-ratios commonly associated with the growth of nitride based semiconductor.Type: GrantFiled: October 18, 2012Date of Patent: March 4, 2014Assignee: QuNano ABInventors: Werner Seifert, Damir Asoli, Zhaoxia Bi
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Publication number: 20140057099Abstract: A capping layer is formed over a hardmask layer to increase the etch resistance and overall performance of the hardmask layer. Embodiments include forming a hardmask layer over a substrate and forming a capping layer on the hardmask layer, the capping layer including a stack of at least two nanolayers.Type: ApplicationFiled: August 21, 2012Publication date: February 27, 2014Applicant: GLOBALFOUNDRIES Inc.Inventor: Robin Abraham KOSHY
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Publication number: 20140048726Abstract: Nano-antennas with a resonant frequency in the optical or near infrared region of the electromagnetic spectrum and methods of making the nano-antennas are described. The nano-antenna includes a porous membrane, a plurality of nanowires disposed in the porous membrane, and a monolayer of nanospheres each having a diameter that is substantially the same as a diameter of the nanowires. The nanospheres are electrically in series with the nanowires.Type: ApplicationFiled: August 16, 2012Publication date: February 20, 2014Applicant: EMPIRE TECHNOLOGY DEVELOPMENT LLCInventor: Christopher J. Rothfuss
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Publication number: 20140048420Abstract: A method for fabricating one-dimensional metallic nanostructures comprises steps: sputtering a conductive film on a flexible substrate to form a conductive substrate; placing the conductive substrate in an electrolytic solution, and undertaking electrochemical deposition to form one-dimensional metallic nanostructures corresponding to the conductive film on the conductive substrate. The method fabricates high-surface-area one-dimensional metallic nanostructures on a flexible substrate, exempted from the high price of the photolithographic method, the complicated process of the hard template method, the varied characteristic and non-uniform coating of the seed-mediated growth method.Type: ApplicationFiled: October 25, 2012Publication date: February 20, 2014Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Yu-Liang CHEN, Nai-Ying CHIEN, Hsin-Tien CHIU, Chi-Young LEE
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Patent number: 8648330Abstract: A method for forming a nanowire field effect transistor (FET) device includes forming a nanowire over a substrate, forming a liner material around a portion of the nanowire, forming a capping layer on the liner material, forming a first spacer adjacent to sidewalls of the capping layer and around portions of the nanowire, forming a hardmask layer on the capping layer and the first spacer, removing an exposed portion of the nanowire to form a first cavity partially defined by the gate material, epitaxially growing a semiconductor material on an exposed cross section of the nanowire in the first cavity, removing the hardmask layer and the capping layer, forming a second capping layer around the semiconductor material epitaxially grown in the first cavity to define a channel region, and forming a source region and a drain region contacting the channel region.Type: GrantFiled: January 5, 2012Date of Patent: February 11, 2014Assignee: International Business Machines CorporationInventors: Sarunya Bangsaruntip, Guy Cohen, Amlan Majumdar, Jeffrey W. Sleight
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Publication number: 20140038093Abstract: A photoconductor and method of forming a photoconductor comprising forming a charge generation material comprising a plurality of quantum dots, and forming an active region comprising one or more photoconductor layers comprising the charge generation material including the quantum dots is disclosed.Type: ApplicationFiled: August 2, 2012Publication date: February 6, 2014Inventors: Farzad Parsapour, Juzo Kuriyama, Rodney Loyd
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Publication number: 20140036369Abstract: A sacrificial limiter filter may include a substrate and a metal nano-coating and/or a polymer/carbon allotrope coating. The sacrificial limited filter may transmit optical radiation having desired frequencies and/or intensities while blocking optical radiation having undesired frequencies and/or intensities.Type: ApplicationFiled: July 31, 2012Publication date: February 6, 2014Applicant: RAYTHEON COMPANYInventors: Michael Ushinsky, Mitchell Haeri