Abstract: An electronic device may have a support structure that supports a display and lenses. Each lens may be a reflective lens such as a catadioptric lens that receives polarized image light from the display and provides a corresponding image to an eye box. The display may be an emissive display with pixels that include light-emitting diodes. The light-emitting diodes may be overlapped by a light recycling layer such as a reflective polarizer or cholesteric liquid crystal layer. The light recycling layer recycles emitted light to enhance display efficiency.

Abstract: The present disclosure provides an organic electroluminescent device and a display panel. The organic electroluminescent device includes a first electrode, a second electrode and a light-emitting layer disposed between the first electrode and the second electrode; a functional electrode is disposed on a side of at least one of the first electrode and the second electrode away from the light-emitting layer; the functional electrode includes a first layer-stacked structure including a plurality of first light-transmitting layers and at least one second light-transmitting layer; the first and second light-transmitting layers are stacked alternately; in the first layer-stacked structure, both the layer closest to the light-emitting layer and the layer farthest from the light-emitting layer are the first light-transmitting layers; a refractive index of the first light-transmitting layer is greater than a refractive index of the second light-transmitting layer.

Abstract: What is provided is a compound, a pattern forming substrate, a coupling agent, and a pattern formation method. The compound is represented by Formula (1).

Abstract: The present disclosure relates to an organic electroluminescent display panel, a method of manufacturing the same, and a display device that can alleviate or avoid the occurrence of pixel crosstalk problems due to lateral conduction of the charge generation layer.

Abstract: Provided are an organic thin film transistor having high bendability and high stability in air and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes: a gas barrier layer consisting of a resin layer and an inorganic layer; a transistor element that is formed on one main surface side of the gas barrier layer and includes a gate electrode, an insulating film, an organic semiconductor layer, a source electrode, and a drain electrode; and a sealing layer that is laminated on a side of the transistor element opposite to the gas barrier layer through an adhesive layer, in which a thickness of the resin layer in the gas barrier layer is less than a thickness ranging from the inorganic layer to the sealing layer in the gas barrier layer.

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; a hole transport layer between the first electrode and the second electrode; a light emitting layer including a first light emitting layer disposed between the hole transport layer and the second electrode and including a first quantum dot and a second light emitting layer between the first light emitting layer and the second electrode and including a second quantum dot; and an electron transport layer between the light emitting layer and the second electrode. Each of the first and second light emitting layers emits first light, hole transport capability per unit area and electron transport capability per unit area of the first quantum dot are greater than hole transport capability per unit area and electron transport capability per unit area of the second quantum dot, respectively.

Abstract: The present disclosure provides a light emitting device including: a first electrode; a first light emitting layer on a side of the first electrode; an N-type charge generation layer on a side of the first light emitting layer distal to the first electrode; a P-type charge generation layer on a side of the N-type charge generation layer distal to the first light emitting layer; a second light emitting layer on a side of the P-type charge generation layer distal to the N-type charge generation layer; and a second electrode on a side of the second light emitting layer distal to the P-type charge generation layer. The N-type charge generation layer includes a host material which has a lowest unoccupied molecular orbital energy level less than or equal to ?2.9 and a glass transition temperature greater than 130° C.

Abstract: A package device includes a first device die and second device die bonded thereto. When the area of the second device die is less than half the area of the first device die, one or more inactive structures having a semiconductor substrate is also bonded to the first device die so that the combined area of the second device die and the one or more inactive structures is greater than half the area of the first device die.

Abstract: A material of a light emitting layer, a manufacturing method thereof, and an electroluminescent device are disclosed. The material of the light emitting layer includes a spiral nanotube structure and luminescent particles. The manufacturing method of the material of the light emitting layer includes steps of manufacturing the spiral nanotube structure and steps of manufacturing a guest-host structure. The manufacturing method is easily achieved, and a compatibility of the material is high.

Abstract: A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

Abstract: The present disclosure provides a nitrogen-containing compound, an electronic element, and an electronic device, and belongs to the technical field of organic materials. In the nitrogen-containing compound, 1-adamantyl and a cyano group are connected on a nitrogen-containing heteroaryl core structure by a linking group, so that the molecule has a high dipole moment as a whole, organic materials with a high electron mobility can be obtained, and the electron transport properties of the electronic element can be improved, and when the nitrogen-containing compound is used as an electron transport layer of an organic electroluminescent device, the luminous efficiency and service life of the device can be improved, and the operating voltage can be reduced.

Abstract: The present disclosure relates to the technical field of display, and discloses a quantum dot light-emitting device and a preparation method thereof. The quantum dot light-emitting device includes a first electrode layer, a quantum dot light-emitting layer, an electron transport layer, a second electrode layer and a third electrode layer which are sequentially arranged in a stacked manner, wherein the side, facing away from the first electrode layer, of the third electrode layer is configured as a light exiting side; the second electrode layer and the third electrode layer are transparent electrode layers; and the work function of the second electrode layer is greater than the LUMO energy level of the electron transport layer and smaller than the work function of the third electrode layer.

Abstract: Disclosed embodiments herein relate to an integrated circuit including power switches with active regions connected to form a contiguous region. In one aspect, the integrated circuit includes a first layer including a first metal rail extending in a first direction. In one aspect, the integrated circuit includes a second layer above the first layer along a second direction perpendicular to the first direction. The second layer may include active regions for power switches. In one aspect, the active regions of the power switches are connected to form a contiguous region extending in the first direction. The first metal rail may be electrically coupled to the active regions through via contacts. In one aspect, the integrated circuit includes a third layer above the second layer along the second direction. The third layer may include a second metal rail electrically coupled to some of the power switches through additional via contacts.

Abstract: Representative implementations provide techniques and systems for processing integrated circuit (IC) dies. Dies being prepared for intimate surface bonding (to other dies, to substrates, to another surface, etc.) may be processed with a minimum of handling, to prevent contamination of the surfaces or the edges of the dies. The techniques include processing dies while the dies are on a dicing sheet or other device processing film or surface. Systems include integrated cleaning components arranged to perform multiple cleaning processes simultaneously.

Abstract: A light emitting device including a first electrode and a second electrode, and an emission layer disposed between the first electrode and the second electrode and including quantum dots, a first charge auxiliary layer disposed between the emission layer and the first electrode, and a second charge auxiliary layer disposed between the emission layer and the second electrode, wherein the emission layer comprises a first emission layer contacting the first charge auxiliary layer, a second emission layer disposed on the first emission layer, and a third emission layer disposed on the second emission layer. The hole mobility of the first emission layer decreases sequentially from the first emission layer to the third emission layer.

Abstract: In one example, a semiconductor device comprises a substrate comprising a conductive structure, a first electronic component over the substrate, an encapsulant over the substrate and contacting a lateral side of the first electronic component, a shield over the encapsulant and contacting a lateral side of the encapsulant and a portion of a lateral side of the substrate, and a communication structure coupled with the substrate. The substrate comprises a vertical groove side and a horizontal groove side defining a groove in the substrate, wherein a portion of the groove is uncovered by the shield. Other examples and related methods are also disclosed herein.

Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

Abstract: The present disclosure discloses a quantum dot light-emitting diode and a preparation method therefor, wherein the quantum dot light-emitting diode comprises an anode, a cathode, and a quantum dot light-emitting layer disposed between the anode and the cathode, further includes a first modified layer disposed between the anode and the quantum dot light-emitting layer, comprising PAMAM having transition metal cation doped. The present disclosure, by disposing the first modified layer between the anode and the quantum dot light-emitting layer to modify the anode, is able to increase work function of anode, thereby improving hole injection effect and performance of a device. The present disclosure, by disposing a second modified layer between the cathode and the quantum dot light-emitting layer to modify the cathode and reduce the work function of the cathode, thereby improves electron injection effect and performance of the device.

Abstract: Provided are a compound capable of more improving the performance of organic EL devices, an organic electroluminescent device having a more improved device performance, and an electronic device including such an organic electroluminescent device; precisely, a compound represented by the following formula (1) wherein X1, X2, X3, L, R1 to R3, R5 to R8, R11 to R13, R15 to R18, R21 to R24, and R25 to R28 are as defined in the description, an organic electroluminescent device containing the compound, and an electronic device including such an organic electroluminescent device.

Abstract: A light emitting diode of an embodiment includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer, and a second electrode disposed on the electron transport region. The hole transport region includes a first hole transport layer disposed adjacent to the first electrode and having a first refractive index, a second hole transport layer disposed adjacent to the emission layer and having a second refractive index, and a third hole transport layer disposed between the first hole transport layer and the second hole transport layer and having a third refractive index which is greater than each of the first refractive index and the second refractive index, thereby showing high light extraction efficiency and high emission efficiency properties.