Abstract: A circuit includes a sense amplifier, a first clamping circuit, a second clamping circuit, and a feedback circuit. The first clamping circuit includes first clamping branches coupled in parallel between the sense amplifier and a memory array. The second clamping circuit includes second clamping branches coupled in parallel between the sense amplifier and a reference array. The feedback circuit is configured to selectively enable or disable one or more of the first clamping branches or one or more of the second clamping branches in response to an output data outputted by the sense amplifier.

Abstract: Disclosed are a synthetic antiferromagnetic material using the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction and a multibit memory using the synthetic antiferromagnetic material that is formed. The synthetic antiferromagnetic material has a non-magnetic metal layer as an RKKY inducing layer in the center, interaction between upper and lower ferromagnetic layers is imparted according to the thickness of the RKKY inducing layer, and the magnetization of an anti-parallel state is maximized therebetween. When such synthetic antiferromagnetic materials are cumulatively stacked and tunnel barrier layers are provided therebetween, multiple bits can be stored. Namely, data may be stored by supplying a program current in parallel to the surface of the RKKY inducing layer, and a resistance state may be checked by supplying current in a vertical direction to the surface of the RKKY inducing layer.

Abstract: An operating method of a voltage converter, includes converting an input voltage to an output voltage and providing a load current corresponding to the output voltage in a pulse frequency modulation mode or a pulse width modulation mode, entering the pulse frequency modulation mode in response to an amount of the load current being less than or equal to a first threshold value, and entering the pulse width modulation mode in response to the amount of the load current being greater than a second threshold value.

Abstract: In a method for reading a memory device including a first memory cell string, in a pre-verify stage, a first verify voltage is applied on a gate terminal of a selected memory cell of the first memory cell string, where the selected memory cell is programmed and arranged between a first adjacent memory cell and a second adjacent memory cell. A first bias voltage is applied on a gate terminal of at least one memory cell of the first memory cell string that is not programmed. In a verify stage, a second verify voltage is applied on the gate terminal of the selected memory cell of the first memory cell string. A second bias voltage is applied on the gate terminal of the at least one memory cell of the first memory cell string that is not programmed, where the second bias voltage is smaller than the first bias voltage.

Abstract: The embodiments provide a method for reading and writing and a memory device. The method includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and setting a mark of the address information pointed to by the read command as invalid if an error occurs in the data to be read out, and backing up the address information pointed to by the read command and the mark into a non-volatile memory cell according to a preset rule.

Abstract: Embodiments provide for predicting rowhammer attack vulnerability of one or more memory cells of a direct random access memory (DRAM) chip, the DRAM chip including a plurality of memory cells. An example method, determines, for each memory cell of a subset of memory cells of the plurality of memory cells, a leakage time t, a resistance of intrinsic leakage RL based at least in part on the leakage time t, an activation time of an adjacent aggressor row to flip a bit in the memory cell, a resistance of coupling leaking RSW based at least in part on the activation time, and a toggling count. The method identifies, based at least in part on one or more of the RSW, RL, or toggling count, whether the direct random memory access (DRAM) chip is vulnerable to a rowhammer attack.

Abstract: A memory device to determine a voltage window to read soft bit data. For example, in response to a read command, the memory device can read a group of memory cells at a plurality of test voltages to determine signal and noise characteristics, which can be used to determine an optimized read voltage for reading hard bit data and a voltage window between a first voltage and a second voltage for reading soft bit data. The soft bit data identifies exclusive or (XOR) of results read from the group of memory cells at the first voltage and at the second voltage respective. The memory device can provide a response to the read command based on the hard bit data and the soft bit data.

Abstract: The embodiments provide a method for reading and writing and a memory device. The method for reading and writing includes: applying a read command to the memory device, the read command pointing to address information; reading data to be read out from a memory cell corresponding to the address information pointed to by the read command; and associating the address information pointed to by the read command with a spare memory cell if an error occurs in the data to be read out. The method for reading and writing provided by the present disclosure greatly improves reliability of the memory device and prolongs lifespan of the memory device.

Abstract: The present disclosure relates to a memory test system and a memory test method. The memory test system comprises: a plurality of test devices, a host computer, and driving modules. Each of the test devices is provided with a test interface used for connecting a memory to be tested. The host computer is respectively connected to the plurality of test devices and configured to control the test devices to test the memory to be tested. The driving modules are connected to the test devices and configured to output, to the test devices, driving signals used for driving the test devices to perform data interaction with the host computer.

Abstract: A method of manufacturing an IC structure includes forming a first plurality of fins extending in a first direction on a substrate, a second plurality of fins extending adjacent to the first plurality of fins, a third plurality of fins extending adjacent to the second plurality of fins, and a fourth plurality of fins extending adjacent to the third plurality of fins. Each fin of the first and fourth pluralities of fins includes one of an n-type or p-type fin, each fin of the second and third pluralities of fins includes the other of the n-type or p-type fin, each of the first and third pluralities of fins includes a first total number of fins, and each of the second and fourth pluralities of fins includes a second total number of fins fewer than the first total number of fins.

Abstract: Aspects of the invention include decoding a base address and an offset to generate a first potential memory address and a second potential memory address. A first cell data associated with the first potential memory address of a first partitioned array and a second cell data associated with a second partitioned array are evaluated. Carry-out bit information is received from a summing operation of the base address and the offset, the operating being performed in parallel to the decoding. The carry-out bit information is used to select either the first cell data or the second cell data.

Abstract: The present disclosure includes apparatuses and methods related to copying data in a memory system with an artificial intelligence (AI) mode. An apparatus can receive a command indicating that the apparatus operate in an artificial intelligence (AI) mode, a command to perform AI operations using an AI accelerator based on a status of a number of registers, and a command to copy data between memory devices that are performing AI operations. The memory system can copy neural network data, activation function data, bias data, input data, and/or output data from a first memory device to a second memory device, such that that the first memory device can use the neural network data, activation function data, bias data, input data, and/or output data in a first AI operation and the second memory device can use the neural network data, activation function data, bias data, input data, and/or output data in a second AI operation.

Abstract: A semiconductor memory device includes a memory cell, a word line connected to the memory cell, a source line connected to the memory cell, a bit line connected to the memory cell, and a control circuit configured to perform a read operation on the memory cell. During the read operation, the control circuit applies to the word line a first voltage, a second voltage greater than the first voltage after applying the first voltage, and a third voltage greater than the first voltage and smaller than the second voltage after applying the second voltage, and applies to the source line a fourth voltage according to a timing at which the second voltage is applied to the word line, a fifth voltage smaller than the fourth voltage after applying the fourth voltage, and a sixth voltage greater than the fifth voltage after applying the fifth voltage.

Abstract: Systems, methods and devices are disclosed for a smart compute memory circuitry that has the flexibility to perform a wide range of functions inside the memory via logic circuitry and an integrated processor. In one embodiment, the smart compute memory circuitry comprises an integrated processor and logic circuitry to enable adaptive System on a Chip (SOC) and electronics subsystem power or performance improvements, and adaptive memory management and control for the smart compute memory circuitry. A resistive memory array is coupled to the integrated processor.

Abstract: A memory controller includes a first receiver configured to compare a read reference voltage with a piece of data received through a first data line and output a first piece of data; a first duty adjuster configured to adjust a duty of the first piece of data; a second receiver configured to compare the read reference voltage with a piece of data received through a second data line and output a second piece of data; a second duty adjuster configured to adjust a duty of the second piece of data; and a training circuit configured to perform a training operation on pieces of data received through a plurality of data lines, to obtain a target read reference voltage for each piece of data and correct a duty of each piece of data based on a level of the target read reference voltage for each piece of data.

Abstract: Embodiments of the disclosure are drawn to apparatuses, systems, methods, and memories that are capable of performing pattern matching operations within a memory device. The pattern matching operations may be performed on data stored within the memory based on a pattern stored in a register. The result of the pattern matching operation may be provided by the memory. The data on which the pattern matching operation is performed may not be output from the memory during the pattern matching operation.

Abstract: A storage device is provided that allows a controller to directly access bytes of data in data latches connected to memory, as opposed to through controller RAM. The storage device may include a memory, a plurality of data latches connected to the memory, and a controller coupled to each of the data latches. The controller is configured to access one or more bytes of decoded data in one or more of the data latches. For instance, the controller may provide a command including an address for data in the memory, and may process one or more bytes of the data in at least one of the data latches in response to the command. The controller may also store a mapping of addresses for each of the word lines, including the address provided in the command. As a result, operation latency may be reduced and controller RAM savings achieved.

Abstract: A system includes a memory device and a processing device coupled to the memory device. The processing device is to perform operations including maintaining a counter to track a number of memory access operations performed on a range of consecutive wordlines in a block of the memory device. The operations further include determining that the number of memory access operations performed on the range of consecutive wordlines satisfies a threshold criterion. The operations further include, responsive to the number of memory access operations performed on the range of consecutive wordlines satisfying the threshold criterion, causing a memory management operation to be performed at each wordline of the range of consecutive wordlines in the block of the memory device.

Abstract: A circuit for detecting a state of an anti-fuse storage unit includes a first current module, a second current module, and a comparator. The first current module has a first end connected to an anti-fuse storage unit array through a first node and a second end connected to a second node. The first current module is configured to output a detection current through the second node. The second current module has a first end connected to a first end of a reference resistor through a third node and a second end connected to a fourth node. A second end of the reference resistor is grounded. The second current module is configured to output a reference current through the fourth node. The comparator has a first input end connected to the second node and a second input end connected to the fourth node.

Abstract: An operating method of a memory device includes selecting a receiver from a plurality of receivers of each memory chip of a plurality of memory chips included in the memory device as a first receiver. The plurality of memory chips share a plurality of data signal lines, each memory chip includes a plurality of on-die termination (ODT) resistors, and the plurality of ODT resistors are respectively connected to the plurality of receivers of each memory chip. The method further includes setting each ODT resistor which is connected to a first receiver to a first resistance value, setting ODT resistors which are connected to receivers which are not first receivers to a second resistance value, and setting an amplification strength of an equalizer circuit of each first receiver by performing training operations. Each data signal line of the plurality of data signal lines is respectively connected to a first receiver.