Abstract: Embodiments of the disclosure are drawn to apparatuses, systems, methods, and memories that are capable of performing pattern matching operations within a memory device. The pattern matching operations may be performed on data stored within the memory based on a pattern stored in a register. The result of the pattern matching operation may be provided by the memory. The data on which the pattern matching operation is performed may not be output from the memory during the pattern matching operation.

Abstract: An operation method of a semiconductor device is disclosed. The semiconductor device includes separate first and second dies in a package and receives first types of signals through first and second respective channels independent of each other and corresponding to the first and second respective dies. The method includes a step in which when information for controlling internal operations of the first and second dies is first applied to the first die through a first pad, the first die performs the internal operation and also transmits the information to the second die through an internal interface connecting the first die and the second die, and a step in which when the information is transmitted to the second die, the second die performs the internal operation.

Abstract: Systems, methods and devices are disclosed for a smart compute memory circuitry that has the flexibility to perform a wide range of functions inside the memory via logic circuitry and an integrated processor. In one embodiment, the smart compute memory circuitry comprises an integrated processor and logic circuitry to enable adaptive System on a Chip (SOC) and electronics subsystem power or performance improvements, and adaptive memory management and control for the smart compute memory circuitry. A resistive memory array is coupled to the integrated processor.

Abstract: A semiconductor memory device includes a memory cell, a word line connected to the memory cell, a source line connected to the memory cell, a bit line connected to the memory cell, and a control circuit configured to perform a read operation on the memory cell. During the read operation, the control circuit applies to the word line a first voltage, a second voltage greater than the first voltage after applying the first voltage, and a third voltage greater than the first voltage and smaller than the second voltage after applying the second voltage, and applies to the source line a fourth voltage according to a timing at which the second voltage is applied to the word line, a fifth voltage smaller than the fourth voltage after applying the fourth voltage, and a sixth voltage greater than the fifth voltage after applying the fifth voltage.

Abstract: A method used in forming a memory array comprising strings of memory cells and operative through-array-vias (TAVs) comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. The stack comprises a TAV region and an operative memory-cell-string region. The TAV region comprises spaced operative TAV areas. Operative channel-material strings are formed in the stack in the operative memory-cell-string region and dummy channel-material strings are formed in the stack in the TAV region laterally outside of and not within the operative TAV areas. Operative TAVs are formed in individual of the spaced operative TAV areas in the TAV region. Other methods and structure independent of method are disclosed.

Abstract: Apparatuses and methods can be related to configuring interface protocols for memory. An interface protocol can define the commands received by a memory device utilizing pins of an interface of a memory device. An interface protocol used by a memory device can be implemented utilizing a decoder of signals provided through the pins of the memory device. The decoder utilized by a memory device can be selected by setting a mode register of the memory device.

Abstract: A memory controller includes a control circuit. The control circuit configures a plurality of physical blocks in a flash memory into a group. The control circuit allocates the plurality of physical blocks constituting the group to a data block and a redundant block. The control circuit writes data required to be saved into the data block. The control circuit writes redundant data based on the data required to be saved into the redundant block belonging to the same group as the data block. When all the data required to be saved are successfully written into the data block, the control circuit releases from the group at least one redundant block belonging to the same group as the data block.

Abstract: A computing device is provided, including memory storing a cost function of a plurality of variables. The computing device may further include a processor configured to, for a stochastic simulation algorithm, compute a control parameter upper bound. The processor may compute a control parameter lower bound. The processor may compute a plurality of intermediate control parameter values within a control parameter range between the control parameter lower bound and the control parameter upper bound. The processor may compute an estimated minimum or an estimated maximum of the cost function using the stochastic simulation algorithm with the control parameter upper bound, the control parameter lower bound, and the plurality of intermediate control parameter values. A plurality of copies of the cost function may be simulated with a respective plurality of seed values.

Abstract: Various embodiments described herein provide for a page program sequence for a block of a memory device, such as a negative-and (NAND)-type memory device, where all the wordlines are programmed with respect to a given set of page types (e.g., LP pages) prior to wordlines are programmed with respect to a next set of page types (e.g., UP and XP pages).

Abstract: A memory apparatus and method of operation is provided. The apparatus includes memory cells connected to word lines and bit lines and arranged in a plurality of planes. The apparatus also includes a control circuit coupled to the word lines and the bit lines and configured to determine whether a program operation of the memory cells involves all of the plurality of planes. In response to the program operation of the memory cells not involving all of the plurality of planes, the control circuit adjusts at least one of a bit line ramp rate of a bit line voltage applied to the bit lines and a word line ramp rate of at least one word line voltage applied to the word lines during the program operation based on a quantity of the plurality of planes associated with the memory cells being program-verified in the program operation.

Abstract: The memory device of the electrically-erasable programmable read-only memory type comprises write circuitry designed to carry out a write operation in response to receiving a command for writing at least one selected byte in at least one selected memory word of the memory plane, the write operation comprising an erase cycle followed by a programming cycle, and configured for generating, during the erase cycle, an erase voltage in the memory cells of all the bytes of the at least one selected memory word, and an erase inhibit potential configured, with respect to the erase voltage, for preventing the erasing of the memory cells of the non-selected bytes of the at least one selected memory word, which are not the at least one selected byte.

Abstract: A storage device includes a non-volatile memory; a volatile memory; and a memory controller configured to control the non-volatile memory and the volatile memory. The memory controller is configured to, in response to a determination that a progressive defect has occurred in at least one memory of the non-volatile memory or the volatile memory during an operation of the storage device, such that the at least one memory is determined to be a defective memory, perform a repair operation on the defective memory based on executing a memory revival firmware.

Abstract: An example of a controller calculates the orientation of the controller based on an output from an inertial sensor, and when a value representing the calculated orientation satisfies a first condition, compresses data in a mode 2, and when the first condition is not satisfied, but a second condition is satisfied, compresses the data in a mode 1, and when the second condition is not satisfied, compresses the data in a mode 0. Then, the controller transmits the compressed data to another apparatus.

Abstract: Systems, methods, and apparatus related to memory devices. In one approach, a memory device has a memory array including memory cells. A controller of the memory device applies multiple pre-read voltages to memory cells prior to performing write operations on the memory cells. The controller applies a first pre-read voltage to determine which of the memory cells have a sensed current that exceeds a threshold. In response to determining that a percentage of the memory cells exceeding the threshold is too low (e.g., below a fixed limit), the controller determines to apply a second pre-read voltage to the memory cells. The second pre-read voltage has a greater magnitude than the first pre-read voltage, and can be applied to ensure greater reliability in properly determining the existing programming state of the memory cells. The controller then applies write voltages to the memory cells as appropriate based on target logic states for each memory cell and the programming mode to be used by the controller.

Abstract: A memory device provides for a multiple-port read operation, and includes an array of bitcells and a control circuit. Each bitcell of the array includes a write wordline port and a first read wordline port. The control circuit provides an output to the write wordline port, and includes as inputs a write select port and a second read wordline port. In a write mode, the control circuit couples the write select port to the output and disables the second read port. In a read mode, the control circuit couples the second read wordline port to the output and disables the write select port, thereby enabling a multiple-port read operation to the array of bitcells.

Abstract: A memory device, and a method of operating the memory device, includes a memory block configured to include a plurality of memory cells that are stacked to be spaced apart from each other on a substrate and to include word lines coupled to the plurality of memory cells, and bit lines and a source line coupled to both ends of strings including the plurality of memory cells, and peripheral circuits configured to perform an erase operation on the memory block, wherein the peripheral circuits are configured to perform the erase operation on the plurality of memory cells included in the memory block, and thereafter perform a defect detection operation on memory cells selected from among the plurality of memory cells depending on sizes of the plurality of memory cells.

Abstract: The present disclosure relates to devices and methods for using a banked memory structure with accelerators. The devices and methods may segment and isolate dataflows in datapath and memory of the accelerator. The devices and methods may provide each data channel with its own register memory bank. The devices and methods may use a memory address decoder to place the local variables in the proper memory bank.

Abstract: A data structure including two or more entries is maintained, where each entry corresponds to a range of consecutive wordlines in a block of a memory device. Each entry includes an operation counter to track a number of memory access operations performed on the range of consecutive wordlines in the block of the memory device. An indication of a memory access operation pertaining to the particular wordline is received. In response to the indication of the memory access operation pertaining to the particular wordline, a determination is made whether the particular wordline is within any range of consecutive wordlines that has a corresponding entry in the data structure. In response to the particular wordline being outside of any range of consecutive wordlines that has a corresponding entry in the data structure, a new entry for a new range of consecutive wordlines that includes the particular wordline is created.

Abstract: An integrated circuit includes a memory array and a read voltage regulator that generates read voltages from the memory array. The read voltage regulator includes a replica memory cell and the replica bitline current path. The replica memory cell is a replica of memory cells of the memory array. The replica bitline current path is a replica of current paths associated with deadlines of the memory array. The read voltage regulator generates a read voltage based on the current passed through the replica bitline current path. This read voltage is then supplied to the wordlines of the memory array during a read operation.

Abstract: An automation apparatus, a reader apparatus, and a method for configuring an automation apparatus. The method includes: harvesting wirelessly, by a passive electronic tag, energy from a reader apparatus; receiving wirelessly, by the passive electronic tag, configuration data from the reader apparatus; storing, by the passive electronic tag, the configuration data to a non-volatile memory of the passive electronic tag; and reading, by a processor, the configuration data from the passive electronic tag.