Abstract: A sheet plasma film forming apparatus includes: a pressure reducing container; a plasma gun; an anode; plasma flowing means; a sheet plasma converting chamber as part of the pressure reducing container; a pair of permanent magnets which forms a sheet-shaped plasma; and a film forming chamber as a part of the pressure reducing container. The pressure reducing container includes first and second bottle neck portions that are openings of the film forming chamber formed such that the plasma flows from the sheet plasma converting chamber through the first bottle neck portion to the film forming chamber, and the flown sheet-shaped plasma flows through the second bottle neck portion to the anode. In the thickness direction of the sheet-shaped plasma, a size of the first and second bottle neck portions is smaller than an internal size of the film forming chamber.

Abstract: A semiconductor circuit has a plurality of MISFETs formed with channel films comprised of semiconductor layers on an insulation film. Channel film thicknesses of each MISFET are different. A correlation relationship is fulfilled where concentration per unit area of impurity contained in the channel films becomes larger for MISFETs of a thicker channel film thickness. As a result, it is possible to suppress deviation of threshold voltage caused by changes in channel film thickness. In this event, designed values for the channel film thicknesses of the plurality of MISFETs are preferably the same, and the difference in channel film thickness of each MISFET may depend on statistical variation from the designed values. The concentration of the impurity per unit area is proportional to the channel film thickness, or is a function that is convex downwards with respect to the channel film thickness.

Abstract: A sheet plasma film forming apparatus (100) of the present invention includes: a plasma gun (40) which can emit source plasma (22) in a transport direction; a sheet plasma converting chamber (20) including a transport space (21) extending in the transport direction; a pair of first magnetic field generating means (24A, 24B) disposed so as to sandwich the transport space (21) such that same poles thereof face each other; a film forming chamber (30) including a film forming space (31) which communicates with the transport space (21); and a pair of second magnetic field generating means (32, 33) disposed so as to sandwich the film forming space such that different poles thereof face each other, wherein: while moving in the transport space (21), the source plasma (22) is converted by a magnetic field of the pair of first magnetic field generating means (24A, 24B) into sheet-shaped plasma spreading along a main surface S including a center; and while moving in the film forming space (31), the sheet-shaped plasma 2

Abstract: A compound represented by formula (I): Formula (I) wherein Z1 is atoms necessary for forming an aromatic ring; Z2 is atoms necessary for forming an aromatic hetero ring; V1 and V2 each are a substituent, and at least one of V1 and V2 is a hydroxyl, primary- or secondary- or tertiary-amino, acylamino, or sulfonamido group; r is 1 to 4; s is 1 to 4; the ring formed by Z1 or Z2 may have a substituent other than V1 or V2; M1 is a counter ion; m1 is the number necessary for neutralizing charge; and X1 and X2 each are a carbon or hetero atom, and at least one of X1 and X2 is a hetero atom.

Abstract: This disease name input support method includes: obtaining type data of a schema selected by a user and identification data of a region on the schema, which is identified by the user, and storing obtained data into a storage device; searching a disease name knowledge storage device storing an inputted disease name in association with the type data of the schema and the identification data of the region on the schema by using the obtained type data of the schema and the obtained identification data of the region on the schema, which are stored in the storage device, to extract a corresponding disease name; and presenting the extracted corresponding disease name as an input candidate disease name to the user.

Abstract: A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.

Abstract: A sensor is provided. The sensor includes semiconductor layer; a photodiode, an impurity-doped polycrystalline silicon layer; and a gate electrode. The photodiode is formed in the semiconductor layer. The impurity-doped polycrystalline silicon layer is formed above the semiconductor layer. The gate electrode applies a gate voltage to the polycrystalline silicon layer. A wiring layer is provided on a first surface of the semiconductor layer and light is incident on a second surface thereof.

Abstract: A silver halide color photographic light-sensitive material, having at least one each of blue-, green-, and red-sensitive emulsion layers containing yellow, magenta, and cyan couplers, respectively, on a support; wherein said blue-sensitive emulsion layer contains at least one coupler of formula (I); and wherein the light-sensitive material satisfies expression a-1) and/or b-1): wherein, Q forms a 5- to 7-membered ring with the —N?C—N(R1)-; R1 and R2 each are a substituent; m is 0 to 5; and X is a hydrogen atom, or a coupling split-off group; 0.5?Dmax(UV)/Dmin(UV)?1.1??a-1) wherein Dmax(UV)/Dmin(UV) is the smallest of the value in a wavelength range of 340 to 450 nm; 1300?(B?C)/A?20000??b-1) wherein B is yellow Dmax, C is yellow Dmin; and A is an amount mol/m2 of the coupler of formula (I).

Abstract: A plasma film deposition system increases plasma density and improves sputtering efficiency by not generating a corner of a sheet plasma and can be operated safely by preventing occurrence of the corner in sheet plasma. The system comprises: a plasma gun capable of discharging source plasma toward a transport direction; a sheet plasma deformation chamber; a pair of magnetic field generating means provided such that same polarities thereof face each other; a film deposition chamber; and a forming magnet coil provided upstream of the pair of magnetic field generating means in the transport direction. The magnetic field generating means and the forming magnet coil generate a magnetic field whose magnetic flux densities in the transport direction are substantially constant at portions of a transport center and their vicinity portions, the portions corresponding to the forming magnet coil and the magnetic field generating means.

Abstract: A norbornene-based polymer contains at least one kind of a repeating unit represented by the following formula (I): wherein R1 and R2 each represent a hydrogen atom, an alkyl group which may possess a substituent group or an aryl group which may possess a substituent group, L and L? each represent a bivalent linking group or a single bond, and A and A? each represent an aromatic group.

Abstract: A constant distance can be maintained between source/drain regions without providing a gate side wall by forming a gate electrode comprising an eaves structure, and a uniform dopant concentration is kept within a semiconductor by ion implantation. As a result, a FinFET excellent in element properties and operation properties can be obtained. A field effect transistor, wherein a gate structure body is a protrusion that protrudes toward source and drain regions sides in a channel length direction and has a channel length direction width larger than that of the part adjacent to the insulating film in a gate electrode, and the protrusion comprises an eaves structure formed by the protrusion that extends in a gate electrode extending direction on the top surface of the semiconductor layer.

Abstract: A vibrating bowl and the like are provided which are capable of accurately counting the number of objects to be fed. The vibrating bowl (10) includes: a concave portion (10a) capable of storing therein collectivity of objects (15) to be fed; a feed passage (20) capable of feeding the objects (15) within the concave portion (10a) by vibrating the objects (15); and a step portion (26) configured to cause the objects to be ejected outside of the concave portion (10a) in a direction substantially perpendicular and downwardly oblique to a feed direction in which those objects (15) which are present in the vicinity of a termination of the feed passage (20) are fed.

Abstract: When the USB power supply (VBUS) of the USB interface is used as the power supply for driving a conventional optical disc apparatus or disc apparatus, the supplied current exceeds the standard of USB.

Abstract: A ? gate FinFET structure having reduced variations in off-current and parasitic capacitance and a method for production thereof are provided. The structure of an element is improved so that an off-current suppressing capability can be exhibited more strongly. A field effect transistor, wherein a first insulating film and a semiconductor region are provided so as to protrude upward with respect to the flat surface of a base, the field effect transistor has a gate electrode, a gate insulating film and a source/drain region, and a channel is formed at least on the side surface of the semiconductor region, wherein that the first insulating film is provided on an etch stopper layer composed of a material having an etching rate lower than at least the lowermost layer of the first insulating film for etching under a predetermined condition.

Abstract: A method for manufacturing a printed circuit board assembled panel by a simple process with an excellent material yield and a high conforming product rate. Unit printed circuit boards previously manufactured are arranged in a frame in a prescribed relationship. Then, the printed circuit boards are fixed to one another, and the printed circuit board and the frame body are fixed to one another.

Abstract: A semiconductor device comprising a first semiconductor region and a second semiconductor region, (a) wherein a field effect transistor is comprised of the first semiconductor region comprising at least one semiconductor layer(s) protruding upward from a substrate, a gate electrode(s) formed via an insulating film such that the gate electrode(s) strides over the semiconductor layer(s) and source/drain regions provided in the semiconductor layer(s) on both sides of the gate electrode(s), whereby a channel region is formed in at least both sides of the semiconductor layer(s), (b) wherein the second semiconductor region comprises semiconductor layers protruding upward from the substrate and placed, at least opposing the first semiconductor region at both ends in the direction perpendicular to a channel current direction and the side surface of the semiconductor layers facing the first semiconductor region is parallel to the channel current direction.

Abstract: A silver halide color photographic light-sensitive material, having at least one each of blue-, green-, and red-sensitive emulsion layers containing yellow, magenta, and cyan couplers, respectively, on a support; wherein said blue-sensitive emulsion layer contains at least one coupler of formula (I); and wherein the light-sensitive material satisfies expression a-1) and/or b-1): wherein, Q forms a 5- to 7-membered ring with the —N?C—N(R1)—; R1 and R2 each are a substituent; m is 0 to 5; and X is a hydrogen atom, or a coupling split-off group; 0.5?Dmax(UV)/Dmin(UV)?1.1: ??a-1) wherein Dmax(UV)/Dmin(UV) is the smallest of the value in a wavelength range of 340 to 450 nm; 1300?(B?C)/A?20000: ??b-1) wherein B is yellow Dmax, C is yellow Dmin; and A is an amount mol/m2 of the coupler of formula (I).

Abstract: A dye-forming coupler of formula (I), a silver halide photographic light-sensitive material containing the coupler, and an azomethine dye compound derived from the coupler: wherein Q is a residue that forms, together with the —N—C?N— moiety, a nitrogen-containing 6-membered ring; RA is a certain alkyl group having at least 7 carbon atoms, or -L-R1; X is an aryl group; Y is a hydrogen atom, or a group capable of being split-off upon a coupling reaction; wherein, when RA is -L-R1, L is a divalent linking group, and R1 is a substituent; and -L-R1 does not represent an alkyl, alkenyl, alkynyl, or aryl group, and -L-R1 does not represent a heterocyclic group that bonds, with a carbon atom therein, to the nitrogen atom of the nitrogen-containing 6-membered ring formed by Q and the —N—C?N— moiety.