Abstract: A silver halide color photographic light-sensitive material, having at least one each of blue-, green-, and red-sensitive emulsion layers containing yellow, magenta, and cyan couplers, respectively, on a support; wherein said blue-sensitive emulsion layer contains at least one coupler of formula (I); and wherein the light-sensitive material satisfies expression a-1) and/or b-1): wherein, Q forms a 5- to 7-membered ring with the —N?C—N(R1)-; R1 and R2 each are a substituent; m is 0 to 5; and X is a hydrogen atom, or a coupling split-off group; 0.5?Dmax(UV)/Dmin(UV)?1.1??a-1) wherein Dmax(UV)/Dmin(UV) is the smallest of the value in a wavelength range of 340 to 450 nm; 1300?(B?C)/A?20000??b-1) wherein B is yellow Dmax, C is yellow Dmin; and A is an amount mol/m2 of the coupler of formula (I).

Abstract: A dye-forming coupler of formula (I), a silver halide photographic light-sensitive material containing the coupler, and an azomethine dye compound derived from the coupler: wherein Q is a residue that forms, together with the —N—C?N— moiety, a nitrogen-containing 6-membered ring; RA is a certain alkyl group having at least 7 carbon atoms, or -L-R1; X is an aryl group; Y is a hydrogen atom, or a group capable of being split-off upon a coupling reaction; wherein, when RA is -L-R1, L is a divalent linking group, and R1 is a substituent; and -L-R1 does not represent an alkyl, alkenyl, alkynyl, or aryl group, and -L-R1 does not represent a heterocyclic group that bonds, with a carbon atom therein, to the nitrogen atom of the nitrogen-containing 6-membered ring formed by Q and the —N—C?N— moiety.

Abstract: A semiconductor device having SRAM cell units each comprising a pair of a first driving transistor and a second driving transistor, a pair of a first load transistor and a second load transistor, and a pair of a first access transistor and a second access transistor, wherein each of the transistors comprises a semiconductor layer projecting upward from a substrate plane, a gate electrode extending on opposite sides of the semiconductor layer so as to stride over a top of the semiconductor layer, a gate insulating film interposed between the gate electrode and the semiconductor layer, and a pair of source/drain areas formed in the semiconductor layer; and the first and second driving transistors each have a channel width larger than that of at least either each of the load transistors or each of the access transistors.

Abstract: A multilayered printed wiring board includes a plurality of insulating layers; a plurality of wiring layers which are located between the corresponding adjacent insulating layers; and a plurality of interlayer connection conductors for electrically connecting the wiring layers through the insulating layers; wherein a cavity is formed through one or more of the insulating layers so as to insert a first electric/electronic component and an area for embedding a second electric/electronic component is defined for the insulating layers.

Abstract: A multilayered printed wiring board includes a flexible wiring board with wiring layers on both main surfaces thereof; a rigid wiring board with wiring layers on both main surfaces thereof and formed opposite to the flexible wiring board under the condition that an area of the main surface of the rigid wiring board is smaller than an area of the main surface of the flexible wiring board; and an electric/electronic component embedded in the rigid wiring board.

Abstract: The present invention relates to a semiconductor device including a Fin type field effect transistor (FET) having a protrusive semiconductor layer protruding from a substrate plane, a gate electrode formed so as to straddle the protrusive semiconductor layer, a gate insulating film between the gate electrode and the protrusive semiconductor layer, and source and drain regions provided in the protrusive semiconductor layer, wherein the semiconductor device has on a semiconductor substrate an element forming region having a Fin type FET, a trench provided on the semiconductor substrate for separating the element forming region from another element forming region, and an element isolation insulating film in the trench; the element forming region has a shallow substrate flat surface formed by digging to a depth shallower than the bottom surface of the trench and deeper than the upper surface of the semiconductor substrate, a semiconductor raised portion protruding from the substrate flat surface and formed of a p

Abstract: A norbornene-based polymer contains at least one kind of a repeating unit represented by the following formula (I): wherein R1 and R2 each represent a hydrogen atom, an alkyl group which may possess a substituent group or an aryl group which may possess a substituent group, L and L? each represent a bivalent linking group or a single bond, and A and A? each represent an aromatic group.

Abstract: A silver halide color photographic light-sensitive material having, on a support, at least each one light-sensitive silver halide emulsion layers containing yellow-, magenta-, or cyan-dye-forming-coupler, and at least one light-insensitive hydrophilic colloid layer, wherein at least one of the dye-forming couplers is a dye-forming coupler that forms an azomethine dye having a solubility of 1×10?8 mol/L to 5×10?3 mol/L in ethyl acetate; and an image forming method using the light-sensitive material.

Abstract: A rigid-flexible board and a method for manufacturing the same can be provided, whereby the material yield ratio can be enhanced and the productive yield can be also enhanced. A rigid board with a step for connection and a flexible board with a connector at the edge thereof are formed independently. Then, the connecting area is spot facing processed so that the depth of the thus obtained depressed portion is equal to or lower than the thickness of the flexible board. The connector of the flexible board is electrically connected to the vertical wiring area of the depressed portion.

Abstract: A semiconductor device having SRAM cell units each comprising a pair of driving transistors, a pair of load transistors and a pair of access transistors, in which each of the transistors has a semiconductor layer projecting upward from a substrate plane, a gate electrode extending on opposite sides of the semiconductor layer so as to stride over a top of the semiconductor layer, a gate insulting film interposed between the gate electrode and the semiconductor layer, and a pair of source/drain areas formed in the semiconductor layer; a longitudinal direction of each semiconductor layer extends along a first direction; and between the adjacent SRAM cell units in the first direction, the semiconductor layer in one of the corresponding transistors is located on a center line of the semiconductor layer in the other transistor which center line extends along the first direction.

Abstract: A variation simulation system providing for facilitated circuit design with suppressed deterioration in performance otherwise caused by variations. A variation analysis unit 100 extracts statistical features of variations from a large number of samples beforehand. A model analysis unit 200 checks response of a circuit simulation output to parameter variations. A fitting execution unit 300 collates the information, obtained in this manner, to each other to determine the manner of variations of the parameters which will reproduce statistical features of the device samples.

Abstract: There is provided a semiconductor device comprising an n-type and a p-type field effect transistors, meeting the conditions that in terms of a crystal orientation of the protruding semiconductor region constituting the n-type field effect transistor, its plane parallel to the substrate is substantially a {100} plane and its side surface is a {100} plane substantially orthogonal to the {100} plane, and that in terms of a crystal orientation of the protruding semiconductor region constituting the p-type field effect transistor, its plane parallel to the substrate is substantially a {100} plane and its side surface is a {110} plane substantially orthogonal to the {100} plane.

Abstract: A field effect transistor comprising: a semiconductor layer projecting from the plane of a base; a gate electrode provided on opposite side surfaces of the semiconductor layer; a gate insulating film interposed between the gate electrode and the side surface of the semiconductor layer; and source/drain regions where a first conductivity type impurity is introduced, wherein the semiconductor layer has a channel forming region in a portion sandwiched between the source/drain regions, and has in the upper part of the semiconductor layer in the channel forming region a channel impurity concentration adjusting region of which the concentration of a second conductivity type impurity is higher than that in the lower part of the semiconductor layer, and in the channel impurity concentration adjusting region, a channel is formed in a side surface portion facing the gate insulating film of the semiconductor layer in the channel impurity concentration adjusting region in a state of operation in which a signal voltage is

Abstract: A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.

Abstract: A compound represented by formula (I): Formula (I) wherein Z1 and Z2 each are atoms necessary for forming an aromatic ring; V1 and V2 each are a substituent W1 or W2; when at least one V1 is W1, at least one V2 is W2, or when at least one V1 is W2, at least one V2 is W1; r is 1 to 4; s is 1 to 4; M1 is a counter ion; m1 is the number necessary for neutralizing charge; W1 is a hydroxyl, primary- or secondary- or tertiary-amino, acylamino, or sulfonamido group; W2 is a nitro, cyano, alkoxycarbonyl, aryloxycarbonyl, alkyl- or aryl-sulfonyl, carbamoyl, sulfamoyl, alkenyl, alkynyl, aryl, heterocyclic, sulfo, carboxyl, heterocyclic oxy, ammonio, alkyl- or aryl-sulfinyl, alkyl- or aryl-sulfonyl, acyl, or aryl- or heterocyclic-azo group; and the aromatic ring may have a substituent other than V1 and V2.

Abstract: There is provided a semiconductor device wherein at least the largest width of a source/drain region is larger than the width of a semiconductor region and the source/drain region has a slope having a width continuously increasing from the uppermost side to the substrate side, and a silicide film is formed in the surface of the slope.

Abstract: A yellow dye-forming coupler represented by formula (I): wherein Q represents a group of nonmetallic atoms that form a 5- to 7-membered ring in combination with the —N?C—N(R1)—; R1 and R2 each represent a substituent; R4 represents an alkyl group; m represents an integer of 0 to 4; and X represents a hydrogen atom, or a group capable of being split-off upon a coupling reaction with an oxidized product of a developing agent; and when R4 represents a primary alkyl group, R1 represents —(CH2)3O—R101 in which R101 is an alkyl group having 4 to 8 carbon atoms. A silver halide color photographic light-sensitive material having at least one yellow dye-forming coupler represented by formula (I) in at least one layer provided on a support.

Abstract: A dye-forming coupler and compound of formula (I): wherein Q represents a residue that forms, together with —N—C?N—, a nitrogen-containing 6-membered ring; RA represents an aryl, heterocyclic, or —(R1)r—(R4)m group; X represents an aryl group; Y represents a hydrogen atom, or a group capable of being split-off upon a coupling reaction with an oxidized product of a developing agent: wherein, when RA represents an —(R1)r—(R4)m group, R1 represents a methylene group, a methine group, or a carbon atom; r is 1 to 30; R4 represents a substituent except for a hydrogen atom; m is 1 to 30; and the —(R1)r—(R4)m group does not represent a straight-chain alkyl group.

Abstract: A silver halide color photographic photosensitive material that has, on a support, at least one yellow color-forming photosensitive silver halide emulsion layer, at least one magenta color-forming photosensitive silver halide emulsion layer, and at least one cyan color-forming photosensitive silver halide emulsion layer, wherein at least one specific yellow or magenta dye-forming coupler and at least one compound represented by formula (Ph) are contained in the same layer: wherein Rb1 represents a specific functional group; and Rb2 to Rb5 each independently represent a hydrogen or halogen atom, or a specific functional group.

Abstract: A silver halide color photographic light-sensitive material, having at least one each of blue-, green-, and red-sensitive emulsion layers containing yellow, magenta, and cyan couplers, respectively, on a support; wherein said blue-sensitive emulsion layer contains at least one coupler of formula (I); and wherein the light-sensitive material satisfies expression a-1) and/or b-1): wherein, Q forms a 5- to 7-membered ring with the —N?C—N(R1)-; R1 and R2 each are a substituent; m is 0 to 5; and X is a hydrogen atom, or a coupling split-off group; 0.5?Dmax(UV)/Dmin(UV)?1.1??a-1): wherein Dmax(UV)/Dmin(UV) is the smallest of the value in a wavelength range of 340 to 450 nm; 1300?(B?C)/A?20000??b-1): wherein B is yellow Dmax, C is yellow Dmin; and A is an amount mol/m2 of the coupler of formula (I).