Abstract: A vitreous silica crucible used to pull up silicon single crystal includes: a cylindrical straight body portion, a corner portion formed at a lower end of the straight body portion, and a bottom portion connected with the straight body portion via the corner portion, wherein the vitreous silica crucible further comprises: an opaque outer layer enclosing bubbles therein; and a transparent inner layer from which bubbles are removed, wherein the residual distortion's distribution obtained by measuring the silica glass's inner surface in a non-destructed state has an optical path difference which is 130 nm or less, which residual distortion's distribution is measured using a distortion-measuring apparatus which converts a linearly polarized light into circularly polarized light and then irradiates the crucible's wall.

Abstract: A method for growing a silicon single crystal includes determining a diameter to give the maximum value of a ratio of an equivalent stress and a critical resolved shear stress in a tail portion on the occasion of the gradual cooling of the silicon single crystal in an after-heating step, in advance; wherein, the tail portion is grown in the tail forming step under a condition that an interstitial oxygen concentration at a position of the determined diameter is 8.8×1017 atoms/cm3 (ASTM '79) or more. This method for growing a silicon single crystal by a CZ method can efficiently grow a heavy weight and large-diameter silicon single crystal while suppressing a generation of slip dislocations in the tail portion of the silicon single crystal in the after-heating step to gradually cool the crystal after finishing the tail forming step.

Abstract: The production method of an SiC single crystal is a production method of an SiC single crystal by a solution growth process. The production method includes a contact step A, a contact step B, and a growth step. In the contact step A, a partial region of the principal surface is brought into contact with a stored Si—C solution. In the contact step B, a contact region between the principal surface and the stored Si—C solution expands, due to a wetting phenomenon, starting from an initial contact region which is the partial region brought into contact in the contact step A. In the growth step, an SiC single crystal is grown on the principal surface which is in contact with the stored Si—C solution.

Abstract: A silicon single crystal wafer is provided. The silicon single crystal wafer includes an IDP which is divided into an NiG region and an NIDP region, wherein the IDP region is a region where a Cu based defect is not detected, the NiG region is a region where an Ni based defect is detected and the NIPD region is a region where an Ni based defect is not detected.

Abstract: Provided is one embodiment which is a method for growing a ?-Ga2O3-based single crystal including contacting a flat plate-shaped seed crystal with a Ga2O3-based melt, and pulling up the seed crystal such that a flat plate-shaped ?-Ga2O3-based single crystal having a principal surface which intersects a surface is grown without inheriting a crystal information of a vaporized material of the Ga2O3-based melt adhered to the principal surface of the seed crystal, wherein when growing the ?-Ga2O3-based single crystal, a shoulder of the ?-Ga2O3-based single crystal is widened in a thickness direction (t) thereof.

Abstract: A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

Abstract: There is provided a silicon single crystal producing method in producing a silicon single crystal by the Czochralski method using a pulling apparatus including a heat shield, wherein an oxygen concentration in the crystal is controlled through the adjustment of a flow velocity of inert gas introduced into the apparatus at the gap portion between an exterior surface of the single crystal and a lower-end opening edge of the heat shield, in accordance with a gap-to-crystal-diameter ratio (“the area of the gap portion”/“the area of a cross-sectional of the single crystal”). By this producing method, it is possible to appropriately control the oxygen concentration in the pulled single crystal.

Abstract: The invention provides a method of manufacturing an N-type silicon single crystal having a resistivity of 0.05 ?cm or less and a crystal orientation of <100> by a Czochralski method, including: bringing a seed crystal into contact with a melt doped with a dopant in a crucible; forming a cone while adjusting a taper angle ? such that a ratio of the total of individual lengths of areas each having a taper angle ? ranging from 25° to 45° to length L of a cone side surface is 20% or less, where ? being formed between a growth direction of the silicon single crystal and the cone side surface when the cone is seen in a diameter direction of the silicon single crystal; and successively forming a straight body. The method can inhibit the generation of dislocations during the cone formation without reducing the yield and productivity.

Abstract: An AFS system for a vehicle may include a motor which has a hollow motor shaft, an input shaft connected with a steering wheel and rotatably and penetratively inserted into the motor shaft, a planetary gear set including a sun gear formed at a lower end portion of the motor shaft, upper planet gears that engage with the sun gear, lower planet gears connected coaxially with the upper planet gears, a ring gear that engages with the lower planet gears, a carrier connected with a lower end portion of the input shaft so as to transmit power and connected to the lower planet gears so as to transmit power, and an output shaft formed integrally with the ring gear and extending toward a lower side of the ring gear.

Abstract: A method for a heat treatment of a silicon single crystal wafer in an oxidizing ambient, including: performing the heat treatment based on a condition determined by a tripartite correlation between a heat treatment temperature during the heat treatment, an oxygen concentration in the silicon single crystal wafer before the heat treatment, and a growth condition of a silicon single crystal from which the silicon single crystal wafer is cut out. This provides a method for a heat treatment of a silicon single crystal wafer which can annihilate void defects or micro oxide precipitate nuclei in a silicon single crystal wafer with low cost, efficiently, and securely by a heat treatment in an oxidizing ambient.

Abstract: A crucible having a top surface, a bottom surface opposite to the top surface, and a tubular side surface located between the top surface and the bottom surface, a resistive heater provided outside of the crucible and made of carbon, a source material provided in the crucible, and a seed crystal provided to face the source material in the crucible are prepared. A silicon carbide single crystal is grown on the seed crystal by sublimating the source material with the resistive heater. In the step of growing a silicon carbide single crystal, a value obtained by dividing a value of a current flowing through the resistive heater by a cross-sectional area of the resistive heater perpendicular to a direction in which the current flows is maintained at 5 A/mm2 or less.

Abstract: A method for manufacturing a silicon single crystal according to a Czochralski method to manufacture an N-type silicon single crystal, including the steps of: seeding to bring a seed crystal into contact with a silicon melt in a crucible and thereafter, necking to pull the seed crystal to narrow a diameter thereof, wherein a dopant concentration in the silicon melt is predicted by a difference between a temperature at the seeding and a temperature at the necking, and resistivity of the single crystal to be pulled is controlled on the basis of the predicted dopant concentration in the silicon melt. A method for manufacturing a silicon single crystal can efficiently manufacture a silicon single crystal with a desired resistivity.

Abstract: Compositions and methods are described for a temporary coating and adhesive with adjustable acidity for use in coating work units as a planarization coating over high topography and also for affixing thin units onto a carrier whereby such compositions provide sufficient properties to support a manufacturing process, and upon completion, the compositions are removed by an aqueous detergent that dissolves and releases the work unit within a rapid time frame without harm to its integrity. The temporary adhesive provides a tunable acidity based upon Lewis acid represented as its acid dissociative constant, Ka, where it is preferred to have Ka?1×10?6 (pKa?6), more preferred Ka?1×10?5 (pKa?5), and most preferred Ka?1×10?4 (pKa?4). The temporary coating and adhesive may be applied and cured in a variety of ways that meet the needs of the work unit and objectives of the manufacturing process.

Abstract: A method for evaluating concentration of defect in silicon single crystal substrate, defect being formed by particle beam irradiation in silicon single crystal substrate, including the steps of: measuring a resistivity of silicon single crystal substrate, followed by irradiating silicon single crystal substrate with particle beam, re-measuring resistivity of silicon single crystal substrate after irradiation; determining each carrier concentration in silicon single crystal substrate before and after irradiation on basis of measured results of resistivity before and after particle beam irradiation to calculate rate of change of carrier concentration; and evaluating concentration of VV defect on basis of rate of change of carrier concentration, VV defect being made of a silicon atom vacancy and being formed by particle beam irradiation in silicon single crystal substrate. The method can simply evaluate concentration of VV defect formed in silicon single crystal substrate by particle beam irradiation.

Abstract: A method of manufacturing a down-conversion substrate for use in a light system includes forming a first crystallography layer including one or more phosphor materials and, optionally, applying at least one activator to the crystallography layer, heating the crystallography layer at high temperature to promote crystal growth in the crystallography layer, and drawing out the crystallography layer and allowing the crystallography layer to cool to form the down-conversion substrate. A light system includes an excitation source for emitting short wavelength primary emissions; and a down-conversion substrate disposed in the path of at least some of the primary emissions from the excitation source to convert at least a portion of the primary emissions into longer-wavelength secondary emissions, wherein the substrate includes one or more crystallography layers, wherein each crystallography layer includes one or more phosphor materials, and optionally at least one activator.

Abstract: A method of manufacturing of a vitreous silica crucible includes: fusing silica powder under a reduced pressure of ?50 kPa or more and less than ?95 kPa to form a transparent vitreous silica layer as an inner layer; fusing silica powder under a reduced pressure of 0 kPa or more and less than ?10 kPa to form a bubble-containing vitreous silica layer as an intermediate layer; and fusing silica powder under a reduced pressure of ?10 kPa or more and less than ?50 kPa to form a semi-transparent vitreous silica layer as an outer layer.

Abstract: A vibrating conveyor having a conveyor chute which has a conveyor surface consisting of silicon, wherein plastic elements are provided between the base body of the conveyor chute and the conveyor surface. The vibrating conveyor is suitable for use in a method for conveying silicon chunks.

Abstract: An improved acoustic touch apparatus that has a logo or application icon applied on the back surface of a propagating substrate which can be viewed through the substrate and an acoustic element situated adjacent the logo or application icon that can compensate for phase velocity shifts of surface acoustic waves in propagating over the logo or application icon.

Abstract: The present invention provides a method for manufacturing a silicon single crystal wafer, wherein, under a growth condition that V/G?1.05×(V/G)crt is achieved where V is a growth rate in growth of the silicon single crystal ingot, G is a temperature gradient near a crystal growth interface, and (V/G)crt is a value of V/G when a dominant point defect changes from a vacancy to interstitial Si, a silicon single crystal ingot having oxygen concentration of 7×1017 atoms/cm3 (ASTM'79) or less is grown, and a silicon single crystal wafer which includes a region where the vacancy is dominant and in which FPDs are not detected by preferential etching is manufactured from the grown silicon single crystal ingot. As a result, there is provided the method that enables manufacturing a low-oxygen concentration silicon single crystal wafer that can be preferably used for a power device with good productivity at a low cost.

Abstract: A crystalline silicon ingot and a method of fabricating the same are provided. The method utilizes a nucleation promotion layer to facilitate a plurality of silicon grains to nucleate on the nucleation promotion layer from a silicon melt and grow in a vertical direction into silicon grains until the silicon melt is completely solidified. The increment rate of defect density in the silicon ingot along the vertical direction has a range of 0.01%/mm˜10%/mm.

Abstract: Single crystal silicon ingots are grown by the multi-pulling method in a single crucible with minimization of dislocations by incorporating barium as a quartz crystallization inhibitor in amounts proportional to the diameter of the Czochralski crucible in which the crystal is grown. In at least one of the crystal pulling steps, a magnetic field is applied.

Abstract: The present invention is provided with a support on a gripping member, the support being composed of linear springs which elastically support an engaging portion. Thus, the support can be reused, and generation of rupture and dislocation of a single crystal ingot from a gripping part of the engaging portion can be prevented.

Abstract: Disclosed is a single-crystal ingot manufacturing apparatus, which includes a crucible in which a melt is accommodated, a heater configured to heat the crucible, a heat shield member configured to shield radiant heat from the heater and the melt, and a neck cover configured to encompass a seed crystal unit above the crucible with being introduced into an opening of the heat shield member, the radiant heat being not shielded in the opening, the neck cover being vertically moved in linkage to vertical movement of the seed crystal unit within a predetermined range.

Abstract: A method of manufacturing a composite crucible includes: supplying mullite material powder to an upper region of a mold, and supplying second silica powder to a lower region provided below the upper region while rotating the mold; supplying third silica powder on an inner surface side of a layer made of the mullite material powder and the second silica powder; heating and fusing the mullite material powder, the second silica powder, and the third silica powder to form an opaque vitreous silica layer provided on the outer surface of the crucible, a transparent vitreous silica layer provided on an inner surface side of the crucible, and a mullite reinforcement layer provided on the outer surface side of an upper end portion of the crucible.

Abstract: There is provided a method for manufacturing a silicon single crystal, the method includes: a raw material melting step of melting polycrystalline silicon accommodated in a crucible to obtain a silicon melt; and bringing a seed crystal into contact with the silicon melt and pulling up the seed crystal to grow the silicon single crystal, wherein, after the raw material melting step and before the pulling step, there are performed: a cristobalitizing step of leaving the silicon melt at a predetermined number of rotations of the crucible with a predetermined gas flow rate and a predetermined furnace pressure to generate cristobalite while applying a magnetic field; and a dissolving step of partially dissolving the cristobalite by carrying out any one of an increase in number of rotations of the crucible, an increase in gas flow rate, and a reduction in furnace pressure beyond counterpart figures in the cristobalitizing step.

Abstract: Preparation of lutetium and yttrium aluminate single crystals doped with rare earth oxides and transition elements consists in the preparation of oxide mixture sinter which is melted throughout and homogenized for a period of at least one hour. The crystal growth rate and broadening of the crystal cone are maintained uniform at an angle of at least 60° from the crystal axis up to a diameter of at least 80% of the crucible diameter which is at least 100 mm. The completion of the process occurs by separating the crystal from the melt while the crystal continues to be positioned inside the crucible in the zone wherein it was grown, and wherein final tempering of the crystal also takes place.

Abstract: The present invention provides a method for manufacturing a silicon single crystal according to a Czochralski method: bringing a sharp end of a seed crystal into contact with a silicon melt; melting the seed crystal from the end up to a position at which the seed crystal has a predetermined diameter; growing the silicon single crystal without a Dash-Necking process, wherein the seed crystal is melted while a crucible is rotated at a rotational speed of 2 rpm or less, and the rotational speed of the crucible is decelerated to below the rotational speed at the time of the melting within 10 minutes after an end of the melting and a start of the crystal growth. The method avoids reduction in success rate for dislocation-free single crystal growth in manufacture of a heavy, large-diameter ingot and improves the productivity by the dislocation-free seeding method without the necking process.

Abstract: During welding, frequently cracks develop at the end of the weld seam. A method is provided in which the power is reduced at the end of the weld seam, reducing the development of cracks. For the method, a welding appliance is used wherein the welding appliance may be a laser.

Abstract: The device of according to the present invention is a device for holding a single crystal silicon seed. The device or holder contains a plurality of strips to clamp a seed crystal in the seed crystal holder; and a base supporting the plurality of strips. The plurality of strips each has a free end which contacts a single crystal silicon seed and an end opposite the free end which joins the base and becomes integral therewith. The plurality of strips are bent or folded in such that they exert pressure on a seed crystal when the seed crystal is inserted among the plurality of strips.

Abstract: The present invention is directed to a single-crystal silicon pulling silica container, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the OH group concentration in the straight body portion is 30 to 300 ppm by mass, the OH group concentration in the bottom portion is 30 ppm by mass or less, and the difference in the OH group concentration between the straight body portion and the bottom portion is 30 ppm by mass or more. As a result, a low-cost single-crystal silicon pulling silica container, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided.

Abstract: A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70.

Abstract: A method for making a rare-earth oxyorthosilicate scintillator single crystal includes growing a single crystal from a melt of compounds including a rare-earth element (such as Lu), silicon and oxygen, a compound including a rare-earth activator (such as Ce), and a compound of a Group-7 element (such as Mn). The method further includes selecting an scintillation performance parameter (such as decay), and based on the scintillation performance parameter to be achieved, doping activator and Group-7 element at predetermined levels, or relative levels between the two, so as to achieve stable growth of the single-crystalline scintillator material from the melt.

Abstract: Granular polycrystalline silicon includes a compact matrix including radiating acicular crystal aggregates of crystal size from 0.001-200 ?m. A process for producing granular polycrystalline silicon includes producing granular silicon in a fluidized bed reactor from a gas mixture containing TCS (20-29 mol %) and hydrogen at a fluidized bed temperature of 900-970° C., dividing the granular silicon in a screen system having at least one screen deck into at least two screen fractions, the smallest screen fraction being ground in a grinding system to give seed particles having a size of 100-1500 ?m and a mass-based median value from 400 to 900 ?m, and these seed particles being supplied to fluidized bed reactor, and a further screen fraction being supplied to a fluidized bed reactor, and being surface-treated with a gas mixture containing TCS (5.1-10 mol %) and hydrogen at a fluidized bed temperature of 870-990° C.

Abstract: A manufacturing method of an epitaxial silicon wafer includes: an epitaxial-film-growth step in which an epitaxial film is grown on a silicon wafer in a reaction container, and a temperature reduction step in which a temperature of the epitaxial silicon wafer is reduced from a temperature at which the epitaxial film is grown. In the temperature reduction step, a temperature reduction rate of the epitaxial silicon wafer is controlled to satisfy a relationship represented by R?2.0×10-4X?2.9, where X (?·cm) represents a resistivity of the silicon wafer, and R (degrees C./min) represents the temperature reduction rate for lowing the temperature of the epitaxial silicon wafer from 500 degrees C. to 400 degrees C.

Abstract: Provided is a vitreous silica crucible which can suppress inward sagging and buckling of the sidewall effectively even when time for pulling silicon ingots is extremely long. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein the crucible has a wall comprising, from an inner surface toward an outer surface of the crucible, a transparent vitreous silica layer having a bubble content rate of less than 0.5%, a bubble-containing vitreous silica layer having a bubble content rate of 1% or more and less than 50%, a semi-transparent vitreous silica layer having a bubble content rate of 0.5% or more and less than 1.0% and having an OH group concentration of 35 ppm or more and less than 300 ppm.

Abstract: A crystalline silicon ingot and a method of manufacturing the same are provided. Using a crystalline silicon seed layer, the crystalline silicon ingot is formed by a directional solidification process. The crystalline silicon seed layer is formed of multiple primary monocrystalline silicon seeds and multiple secondary monocrystalline silicon seeds. Each of the primary monocrystalline silicon seeds has a first crystal orientation different from (100). Each of the secondary monocrystalline silicon seeds has a second crystal orientation different from the first crystal orientation. Each of the primary monocrystalline silicon seeds is adjacent to at least one of the secondary monocrystalline silicon seeds, and separate from the others of the primary monocrystalline silicon seeds.

Abstract: Silicon single crystals having suppressed deformation and dislocations and the successful omission of the tail section are produced by growing the straight-body section of the silicon single crystal under the influence of a horizontal magnetic field with a magnetic flux density at its magnetic center being ?1000 Gauss, and ?2000 Gauss, reducing the lifting speed of the silicon single crystal relative to the surface of the melt to 0 mm/minute, maintaining a static state until there is a decrease in the apparent weight of the silicon single crystal, then further maintaining the static state so that the entire growth front of the silicon single crystal forms a convex shape protruding in a direction opposite to the lifting direction of the silicon single crystal, and separating the silicon single crystal from the melt.

Abstract: A doped silicon single crystal having a resistivity variation along a longitudinal and/or radial axis of less than 10% and a method of preparing one or a sequential series of doped silicon crystals is disclosed. The method includes providing a melt material comprising silicon into a continuous Czochralski crystal growth apparatus, delivering a dopant, such as gallium, indium, or aluminum, to the melt material, providing a seed crystal into the melt material when the melt material is in molten form, and growing a doped silicon single crystal by withdrawing the seed crystal from the melt material. Additional melt material is provided to the apparatus during the growing step. A doping model for calculating the amount of dopant to be delivered into the melt material during one or more doping events, methods for delivering the dopant, and vessels and containers used to deliver the dopant are also disclosed.

Abstract: A method for producing a semiconductor device is provided. The method includes providing a wafer including a main surface and a silicon layer arranged at the main surface and having a nitrogen concentration of at least about 3*1014 cm?3, and partially out-diffusing nitrogen to reduce the nitrogen concentration at least close to the main surface. Further, a semiconductor device is provided.

Abstract: A solution-stirring top-seeded solution-growth method for forming CLBO of the type where water is added to a precursor mixture, where heavy water is substituted for the water.

Abstract: A light emitting element according to one embodiment of the present invention is configured of a metal fluoride crystal which is represented by chemical formula LiM1M2F6 (wherein Li includes 6Li; M1 represents at least one alkaline earth metal element selected from among Mg, Ca, Sr and Ba; and M2 represents at least one metal element selected from among Al, Ga and Sc), said metal fluoride crystal containing 0.02% by mole or more of Eu and having an Eu2+ concentration of less than 0.01% by mole.

Abstract: A polycrystalline silicon rod is formed of polycrystalline silicon deposited radially around a silicon core line and is characterized by, in a cross-section that is a perpendicular cut in respect to the axial direction of a cylindrical rod, a ratio of surface area covered by coarse crystal particles having a diameter of 50 ?m or greater is 20% or more of the crystal observed at the face, excluding the core line portion.

Abstract: Disclosed is an alumina raw material for the production of a sapphire single crystal, which contains at least one element X selected from the group consisting of elements (1) to (3) shown below, wherein the concentration of the element X is 10 ppm or more and 1,000 ppm or less expressed in terms of atoms, and each concentration of silicon (Si), gallium (Ga), germanium (Ge) and tin (Sn) is 10 ppm or less expressed in terms of atoms. Element X: (1) Element having an ionic radius of 0.3 ? or less, and a valence of 3 (2) Element having an ionic radius of 0.4 ? or more and 0.5 ? or less, and a valence of 4 (3) Element having an ionic radius of 0.6 ? or more and 0.7 ? or less, and a valence of 4 or 5.

Abstract: A method for recharging a crucible with polycrystalline silicon comprises adding flowable chips to a crucible used in a Czochralski-type process. Flowable chips are polycrystalline silicon particles made from polycrystalline silicon prepared by a chemical vapor deposition process, and flowable chips have a controlled particle size distribution, generally nonspherical morphology, low levels of bulk impurities, and low levels of surface impurities. Flowable chips can be added to the crucible using conventional feeder equipment, such as vibration feeder systems and canister feeder systems.

Abstract: A crucible for growing crystals, the crucible being formed from Molybdenum and Rhenium. A crucible for growing crystals, the crucible being formed from a metal selected from Group V of the Periodic Table of the Elements. A crucible for growing crystals, the crucible comprising a body and a layer formed on at least a portion of the body, the layer being formed out of Molybdenum.

Abstract: A crucible for pulling a silicon single crystal has a double structure comprising a silica crucible and a graphite crucible covering an outside of the silica crucible, wherein the silica crucible is provided at its opening end portion with an inward falling prevention means for imparting a radially outward force to a body portion of the silica crucible.

Abstract: A holder according to one embodiment is a holder which is used in a solution growth method of growing a crystal on a lower surface of a seed crystal by contacting the lower surface of the seed crystal with a solution of silicon including carbon in a crucible having an opening on an upper end thereof. The holder includes: a holding member which holds the seed crystal on a lower surface; the seed crystal which is held on the lower surface of the holding member, has an upper surface larger than the lower surface, and is made of silicon carbide; and a suppressing member which is fixed to a side surface of the holding member, continues from the side surface to outside further outward than an outer circumference of the seed crystal in plan view, and suppresses upward movement of vapor from the solution.

Abstract: Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides semiconductor predominantly of a single type (p-type or n-type) for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of boron, phosphorus, aluminum and/or gallium. The process further melts the silicon feedstock with the boron, phosphorus, aluminum and/or gallium to form a molten silicon solution from which to perform directional solidification and maintains the homogeneity of the resistivity of the silicon throughout the ingot. A balanced amount of phosphorus can be optionally added to the aluminum and/or gallium. Resistivity may also be measured repeatedly during ingot formation, and additional dopant may be added in response, either repeatedly or continuously.

Abstract: When pulling and growing a single crystal from a raw material melt by the Czochralski method, a boundary between the single crystal and the raw material melt is imaged by an optical sensor, and also the weight of the single crystal is measured by a weight sensor, a diameter value of the single crystal is calculated on the basis of first measured values of the diameter of the single crystal derived from image data captured by the optical sensor and second measured values of the diameter of the single crystal derived from weight data captured by the weight sensor, and a pulling rate of the single crystal and the temperature of the raw material melt are adjusted on the basis of the calculated diameter value to thereby control the diameter of the single crystal, and thus it is possible to accurately measure the diameter of a growing single crystal.

Abstract: The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.