Abstract: The invention relates to the control of a reactive high-power pulsed sputter process. The invention particularly relates to a method for controlling a process of the aforementioned kind, wherein a controlled variable is measured and an adjustable variable is modified based on the measured controlled variable in order to adjust the controlled variable to a predetermined setting value. The method according to the invention is characterised by modifying the discharge capacity by varying the pulse frequency of the discharge.

Abstract: A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field.

Abstract: Provided is a sputtering target for a magnetic recording film, in which film formation efficiency and film characteristics can be improved by suppressing growth of crystal grains, reducing magnetic permeability, and increasing density. A method for manufacturing such a sputtering target is also provided. The sputtering target is composed of a matrix phase which includes Co and Pt and a metal oxide phase for example. The sputtering target has a magnetic permeability in the range of 6 to 15 and a relative density of 90% or more.

Abstract: A film formation apparatus and film formation method that improve film thickness uniformity. A rotation mechanism holds a target having a sputtered surface in a state inclined relative to a surface of a substrate. The rotation mechanism rotatably supports the target about an axis extending along a normal of the sputtered surface. The target supported by the rotation mechanism is sputtered to form a thin film on the surface of the substrate. When forming the thin film, the rotation mechanism maintains the rotational angle of the target.

Abstract: A method of forming patterns on transparent substrates using a pulsed laser is disclosed. Various embodiments include an ultrashort pulsed laser, a substrate that is transparent to the laser wavelength, and a target plate. The laser beam is guided through the transparent substrate and focused on the target surface. The target material is ablated by the laser and is deposited on the opposite substrate surface. A pattern, for example a gray scale image, is formed by scanning the laser beam relative to the target. Variations of the laser beam scan speed and scan line density control the material deposition and change the optical properties of the deposited patterns, creating a visual effect of gray scale. In some embodiments patterns may be formed on a portion of a microelectronic device during a fabrication process. In some embodiments high repetition rate picoseconds and nanosecond sources are configured to produce the patterns.

Abstract: A method and apparatus for physical vapor deposition of films on a substrate is provided. The apparatus comprises a series of connected sputtering chambers through which a substrate passes to undergo sequential deposition processes. The chambers have passages through which the substrates move, and through which process gases may leak. Target gas flows to each chamber are established by operating each chamber while adjacent chambers are idle, measuring the extent of gas communication between the chambers, and reducing the flows by an amount based on the extent of gas leakage.

Abstract: A sputter deposition method and system for producing a metal oxide film, especially a dielectric standoff layer of a thin film/nanolayer capacitor. A noble gas, such as argon, is used to sputter metal ions from a metal target, such as niobium, in the presence of a partial pressure of oxygen in a vacuum chamber. And an oxygen-to-noble gas flow ratio entering the vacuum chamber is controlled by a flow controller to be within an operating range defined between a predetermined lower limit (such as 30% O2/Ar for niobium oxide) associated with a minimum transparency/stoichiometric threshold and a predetermined upper limit (such as 80% O2/Ar for niobium oxide) associated with a maximum roughness/porosity threshold, so that a reaction between the sputtered metal ions and the oxygen produces a substantially transparent metal oxide film with a substantially smooth non-porous surface.

Abstract: In order to automatically adjust a self-bias on a substrate to a constant value at all times and to form a high-quality insulating film with excellent process reproducibility, a vacuum thin film forming apparatus according to the present invention includes: a high-frequency sputtering device having a chamber, an evacuation means for evacuating the inside of the chamber, a gas introduction means for supplying gas into the chamber, a substrate holder provided within the chamber, and an electrode provided within the substrate holder; and at least one vacuum treatment chamber that can be selected from a group including a physical vapor deposition (PVD) chamber, a chemical vapor deposition (CVD) chamber, a physical etching chamber, a chemical etching chamber, a substrate heating chamber, a substrate cooling chamber, an oxidation treatment chamber, a reduction treatment chamber, and an ashing chamber, wherein the high-frequency sputtering device further includes a variable impedance mechanism electrically connected

Abstract: A method of responding to voltage or current transients during processing of a wafer in a plasma reactor at each of plural RF power applicators and at the wafer support surface. For each process step and for each of the power applicators and the wafer support surface, the method includes determining an arc detection threshold lying above a noise level. The method further includes comparing each transient with the threshold determined for the corresponding power applicator or wafer support surface, and issuing an arc detect flag if the transient exceeds the threshold.

Abstract: A technology which is capable of an accurate measurement of the film thickness even if an exfoliation occurs is provided. A difference frequency ?f0 is calculated from a resonance frequency f0 of a film thickness sensor at a current time a0 and a resonance frequency f1 at an immediate past time a1, and whether the exfoliation has occurred or not is detected from its sign and a comparison result relative to a reference value. When the exfoliation has occurred, a corrected film thickness value T? is obtained by adding the thickness ?t0 of the exfoliation film to an increased film thickness value T which is determined from a resonance frequency fx measured at a future time ax to be converted to the thickness of a film on a film forming object, and whether the formation of the film should be terminated is judged in comparison to an aimed value.

Abstract: A plasma reactor system for processing a wafer in which respective comparators are coupled to the respective RF transient sensors which are coupled in turn to respective RF power application points. The comparators have respective comparison thresholds. The system further includes a controller programmed to updating the respective thresholds of the comparators with respective updated thresholds for different ones of the steps of the process recipe.

Abstract: A method for processing a semiconductor wafer in a plasma reactor comprises sensing transient voltages or currents on a conductor coupled to the wafer and providing a first comparator for comparing the transient voltages or currents with a threshold level stored in the comparator. The method further includes transmitting from the comparator an arc flag signal whenever a transient voltage or current is sensed that exceeds the threshold level, and deactivating the power generator in response to the arc flag signal.

Abstract: An iPVD apparatus (20) is programmed to deposit material (10) onto semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 0-10 Gauss. Static magnetic fields during deposition modes may be more than 150 Gauss, in the range of 0-50 Gauss, or preferably 20-30 Gauss, and may be the same as during etch modes or switched between a higher level during deposition modes and a lower level, including zero, during etch modes. Such switching may be by switching electromagnet current or by moving permanent magnets, by translation or rotation. Static magnetic fields are kept to a minimum during at least the etch modes, at least less than 150 Gauss, typically less than 50 Gauss, and preferably in the range of 1-10 Gauss. The modes may operate at different power and pressure parameters.

Abstract: Ion-enhanced physical vapor deposition is augmented by sputtering to deposit multi-component materials. The process may be used to deposit coatings and repair material on Ti alloy turbine engine parts. The physical vapor deposition may be ion-enhanced electron beam physical vapor deposition.

Abstract: Wafer level arc detection is provided in a plasma reactor using an RF transient sensor sensing voltage at an electrostatic chucking electrode, the RF sensor being coupled to a threshold comparator, and a system controller responsive to the threshold comparator.

Abstract: A dual magnetron sputtering power supply for use with a magnetron sputtering apparatus having at least first and second sputtering cathodes for operation in the dual magnetron sputtering mode, there being a means for supplying a flow of reactive gas to each of said first (1) and second (4) cathodes via first (12) and second (14) flow control valves each associated with a respective one of said first and second cathodes and each adapted to control a flow of reactive gas to the respectively associated cathode, the power supply having, for each of said first and second cathodes a means for deriving a feed-back signal relating to the voltage prevailing at that cathode, a control circuit for controlling the flow of reactive gas to the respectively associated cathode by controlling the respective flow control valve and adapted to adjust the respective flow control valve to obtain a voltage feedback signal from the respective cathode corresponding to a set point value set for that cathode.

Abstract: Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator.

Abstract: In a rotary magnet sputtering apparatus, a target consumption displacement quantity is measured, and corresponding to the measurement results, a distance between a rotating magnet group and a target is adjusted, and uniform film forming rate is achieved over a long period of time so as to reduce the change of a target surface due to consumption of the target and to reduce the change of the film forming rate with time. An ultrasonic sensor or a laser transmitting/receiving device may be used as a means for measuring the consumption displacement quantity of the target.

Abstract: A film thickness measuring method can carry out measurement of a thickness of an oxide film more simply in a shorter time. The film thickness measuring method includes determining a thickness of an oxide film or thin film of a metal or alloy by solely using a phase difference ?, measured by ellipsometry, based on a predetermined relationship between the phase difference ? and the thickness of the oxide film or thin film of the metal or alloy.

Abstract: A magnetron sputtering source includes a plurality of electrodes and a switching circuit. The switching circuit sequentially connects each of the plurality of electrodes to a ground reference, making it anodic, while connecting the remaining of the plurality of electrodes as cathodes. A method of operating the magnetron sputtering source includes steps of: providing a plurality of target arrangements; causing each of the plurality of target arrangements to act as a cathode; and sequentially causing each of the plurality of cathodes to temporarily act as an anode.

Abstract: A vacuum treatment apparatus (10) for treating at least one substrate (12) and comprising a treatment chamber (14), at least one cathode (16), a power supply (18) associated with the cathode for generating ions of a material present in the gas phase in the chamber and/or ions of a material of which the cathode is formed, a substrate carrier (20) and a bias power supply for applying a negative bias to the substrate carrier and any substrate present thereon, whereby to attract said ions to said at least one substrate, said cathode power supply being adapted to apply relatively high power pulses of relatively short duration to said cathode at intervals resulting in lower average power levels comparable with DC operation, e.g. in the range from ca.

Abstract: A continuous coating installation is disclosed. The installation includes a vacuum chamber having a supply opening for supplying a substrate to be coated and a discharge opening for discharging the coated substrate. The installation also includes a physical vapour deposition device for coating a surface of the substrate, and a laser crystallization system for simultaneously illuminating at least one sub-partial area of a currently coated partial area of the surface of the substrate with at least one laser beam. The installation further includes a transport device for transporting the substrate in a feedthrough direction from the supply opening to the discharge opening and for continuously or discontinuously moving the substrate during the coating thereof in the feedthrough direction.

Abstract: A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

Abstract: A magnetron unit moving apparatus for preventing magnetization and magnetron sputtering equipment having the same. The magnetron unit moving apparatus includes a magnetron unit disposed adjacent to a target, to generate a specific magnetic field, and a movement unit to space the magnetron unit and the target apart such that a strength of a magnetic field generated over the target is within a predetermined reference strength range. It is possible to space the target and the magnetron unit apart so as to prevent the target from being magnetized when a process is not performed.

Abstract: Method for controlling a high-voltage power supply generator for a magnetron (16) for producing a cold plasma inside a hollow body in order to carry out the deposition of a boundary layer within said hollow body, characterised in that it comprises selecting (E2) a generator operation mode from a plurality of operation modes (MODE 1, MODE 2, MODE 3), modifying the operation mode (MODE 1, MODE 2, MODE 3) of the generator by varying at least one coefficient ((a, b, c); (a1, b1, c1)) defining a maximal power Pmax of the waveform of the supply power of the magnetron (16) according to a set average power Pmoy of the magnetron (16), the magnetron (16) supply waveform being repeated recurrently with a cyclic conduction ratio Th depending on the set average power Pmoy and/or on the maximal power Pmax.

Abstract: A method and apparatus for detecting a wafer-level arc in a plasma process chamber. The method includes, for example, monitoring a waveform of a signal supplied to the plasma process chamber; detecting a feature in the waveform; responsive to detecting the feature, determining whether the waveform has stabilized after the feature; responsive to the waveform stabilizing, determining whether the feature is part of a bidirectional waveform anomaly or a unidirectional waveform transition; and recording to a computer-readable medium either an indication of the feature being part of a bidirectional waveform anomaly or an indication of the feature being a unidirectional waveform transition.

Abstract: A method for operating one or more plasma processes in a plasma chamber, with at least two power supplies, the method comprising the following process steps: a. carrying out an arc detection for at least one of the power supplies; b. generating at least one signal relating to the arc detection and/or data relating to the arc detection; transferring the at least one signal and/or the data to a plasma process-regulating device and/or to one or more other power supplies or to one or more of the arc diverter devices associated with the other power supplies.

Abstract: A physical vapor deposition apparatus includes a vacuum chamber, a particles producing means, a substrate stand, a correction plate, and an ion source disposed in the vacuum chamber. The physical vapor deposition apparatus further includes a strain gauge adhered on the correction plate for detecting deforming of the correction plate, a controlling circuit electrically coupled to the strain gauge, and an alarm electrically connected to the controlling circuit. The controlling circuit is configured for controlling the alarm to produce an alert signal when the deforming of the correction plate exceeds a predetermined degree.

Abstract: Improved methods and apparatus for forming thin-film layers of semiconductor material absorber layers on a substrate web. According to the present teachings, a semiconductor layer may be formed in a multi-zone process whereby various layers are deposited sequentially onto a moving substrate web.

Abstract: An electrode that is used for discharge surface treatment in which, with a compact molded from metal powders or a compact obtained by heating the molded compact as an electrode, pulsed electric discharge is generated between the electrode and a workpiece to form a film of an electrode material, or a film of substance that reacts with the electrode material on a surface of the workpiece by discharge energy. The electrode contains 90 weight percent or more of one of Zn powders, Sn powders, and Ni powders. By using such an electrode for discharge surface treatment, a Zn, Sn, or Ni film less likely to separate from the surface of the workpiece can be formed, and the film can be a phosphide or sulfide reaction film in lubricant containing phosphorus or sulfur.

Abstract: An anodizing method in which a workpiece made of aluminum or aluminum alloy is immersed in an electrolytic solution, and treatment is performed in which the application of positive voltage for a very short period of time and the removal of charges are repeated alternately between the workpiece and a cathode arranged in the electrolytic solution includes a step of performing treatment in which the positive voltage application and the charge removal are repeated in a tentative cycle, measuring the control point arrival time of a current waveform at the positive voltage application period, and determining normal positive voltage application time based on the control point arrival time; and a step of performing treatment in which the application of positive voltage and the removal of charges are repeated in a cycle corresponding to the normal positive voltage application time, and forming an anodized film on the surface of the workpiece.

Abstract: In a reactive sputtering apparatus, an inert-gas supplying hole is provided in a movable target unit whose one end is open and whose conductance is controlled, and a reactive gas containing at least fluorine or oxygen can be supplied to a space between the target and a substrate. The apparatus is constructed so as to emit the reactive gas toward the substrate. A reactive-gas emitting location is in the space between the target and the substrate such that a concentration of the reactive gas on the substrate surface can be maintained at a higher level. When the target is moved, a reactive-gas emitting port is moved or the reactive-gas emitting location is changed. The concentration of the reactive gas on the substrate surface can be effectively kept constant, and a high-quality optical thin film can be formed.

Abstract: A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

Abstract: The present invention relates to a method and apparatus for real-time monitoring and controlling surface area erosion of a sputter target assembly utilized in a physical vapor deposition process.

Abstract: A method for measuring the temperature of substrates to be coated is disclosed. The substrates have an opening or a cavity, and the substrates are successively moved past a source of coating material. At least one substrate's temperature is measured during coating by at least one temperature sensor and the measured temperature value is transmitted to a measuring device. The temperature sensor is disposed inside the substrate's opening or cavity so as to prevent coating of the temperature sensor.

Abstract: Wafer level arc detection is provided in a plasma reactor using an RF transient sensor coupled to a threshold comparator, and a system controller responsive to the threshold comparator.

Abstract: A writing apparatus includes a storage unit configured to store writing data, an acquiring unit configured to acquire information on a pattern defined based on the writing data, a selecting unit configured to select a format of a plurality of formats having different number of bits to be used, based on acquired information on the pattern, for each predetermined region, a converting unit configured to convert data in the predetermined region defined by the writing data, by using a selected format, and a writing unit configured to write a predetermined pattern on a target workpiece, based on converted data in the predetermined region.

Abstract: A plating analyzing method is disclosed for analyzing an electroplating system having an anode, a cathode and plating liquid, based on a Laplace's equation. The method comprises the steps of making the Laplace's equation discrete by Finite Volume Method; forming simultaneous equations based on the discrete Laplace's equation; and calculating potential distribution using the simultaneous equations. A plating analyzing apparatus is also disclosed, which comprises a unit for making the Laplace's equation discrete by Finite Volume Method and dividing the system into a plurality of elements; potential calculating unit for forming simultaneous equations based on the discrete Laplace's equation, and calculating potential distribution using the simultaneous equations; and current density calculating unit for calculating current density distribution based on the potential distribution.

Abstract: A control system and method for controlling two motors determining the azimuthal and circumferential position of a magnetron rotating about the central axis of the sputter chamber in back of its target sputtering and capable of a nearly arbitrary scan path, e.g., with a planetary gear mechanism. A system controller periodically sends commands to the motion controller which closely controls the motors. Each command includes a command ticket, which may be one of several values. The motion controller accepts only commands having a command ticket of a different value from the immediately preceding command. One command selects a scan profile stored in the motion controller, which calculates motor signals from the selected profile. Another command instructs a dynamic homing command which interrogates sensors of the position of two rotating arms to determine if the arms in the expected positions. If not, the arms are rehomed.

Abstract: An ionization vacuum device measures a pressure in a vacuum vessel, and has: an anode provided inside the vacuum vessel; a cathode provided inside the vacuum vessel; a power source for discharge that supplies electric power for discharge between the anode and the cathode; a power source for cathode-heating that supplies power for heating to the cathode, means for forming a magnetic field in a space between the anode and the cathode; control means for controlling so as to heat said cathode by said power source for cathode-heating while discharge of gas inside said vacuum vessel is caused, and so as to maintain the temperature of said cathode within a temperature range where thermonic electrons are not emitted from said cathode.

Abstract: A system and method for sputtering having a substrate holder, the target-cathode and the shield that are all electrically isolated from each other and are all capable of independently being subjected to different voltages. The substrate holder can be a pallet that holds a plurality of substrates. The system further includes a plurality of target-cathodes and shields disposed along the path of travel of the moving substrate holder, and a controller configured to selectively vary the target-cathode voltage, the shield voltage, and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes and shields are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage and shield voltage.

Abstract: An apparatus and methods for plasma-based sputtering deposition using a direct current power supply is disclosed. In one embodiment, a plasma is generated by connecting a plurality of electrodes to a supply of current, and a polarity of voltage applied to each of a plurality of electrodes in the processing chamber is periodically reversed so that at least one of the electrodes sputters material on to the substrate. And an amount of power that is applied to at least one of the plurality of electrodes is modulated so as to deposit the material on the stationary substrate with a desired characteristic. In some embodiments, the substrate is statically disposed in the chamber during processing. And many embodiments utilize feedback indicative of the state of the deposition to modulate the amount of power applied to one or more electrodes.

Abstract: A two-chamber electron impact emission sensor effective for monitoring vapor flux of materials in the presence of interfering species is described. The sensor includes two independent electron excitation regions and one photodetector for monitoring emission from excited species from both chambers. Copper vapor flux from an evaporation source was accurately measured in the presence of interfering H2O vapor, and Ga vapor flux from an evaporation source was accurately monitored in the presence of interfering CO2 gas. The invention permits deposition rates to be monitored using electron-impact emission spectroscopy with significantly improved accuracy in the presence of interfering gases at high partial pressures.

Abstract: A system for providing a seal between a rotating part and a stationary part that comprises two seals in series separated by a cavity is disclosed. The cavity may be at low pressure and failure of either seal may be detected by a change in cavity pressure. An alarm may be triggered when cavity pressure rises above a threshold, or when it remains above a threshold for more than a predetermined period of time. In a system comprising multiple cavities, a cavity may be selectively isolated to determine if a seal associated with that cavity is experiencing a leak.

Abstract: A system and a method for plasma enhanced thin film deposition are disclosed, in which the system comprises a plasma enhanced thin film deposition apparatus and a plasma process monitoring device. The plasma enhanced thin film deposition apparatus receives pulsed power and a reactive gas, whereby plasma discharging occurs to ionize the reactive gas into a plurality of radicals for thin film deposition. The plasma process monitoring device comprises an optical emission spectroscopy (OES) and a pulsed plasma modulation device, in which the OES detects spectrum intensities of the radicals and the pulsed plasma modulation device calculates a spectrum intensity ratio of the radicals so as to modulate the plasma duty time of pulsed power, thereby high deposition rate as well as real-time monitoring on thin film deposition quality can be achieved.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.

Abstract: Provided is a method for managing manufacturing apparatuses used in a managed production line including a plurality of manufacturing processes for manufacturing an electronic device, each of the apparatuses being used in each of the processes, the method including: acquiring a property of a reference device manufactured in a predetermined reference production line including the manufacturing processes to be performed; performing at least one of the manufacturing processes in the managed production line, performing the other manufacturing processes in the reference production line, and manufacturing a comparison device; measuring a property of the comparison device; comparing the measured properties between the reference and the comparison devices; and judging whether the manufacturing apparatus used in the at least one manufacturing process is defective or not, based on a property difference between the reference and the comparison devices.

Abstract: At least one substrate location sensor is provided on a piece of equipment containing two adjoined chambers between which substrates may be transferred one at a time. Deviation of substrate position from a predetermined optimal position is measured as a substrate is transferred between the two adjoined chambers. Measured data on the deviation of substrate position is entered into a statistical control program hosted in a computing means. The measured data indicates the level of performance of the robot and/or the condition of alignment of components in one of the two chambers. As the statistical control generates flags based on the measured data, maintenance activities may be performed. Thus, maintenance activities may be performed on a “as-needed” basis, determined by the measurement data on performance of the equipment.

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract: The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate.