Abstract: A vapor deposition process for depositing TiO2 and a vapor desposition process for depositing SiO2 are alternately repeated in a multi-layer film forming process. A refractive index that a thin film formed by each vapor depositing will provide is individually determined prior to each relative vapor depositing, and vapor deposition control data is prepared based on such a refractive index. Each vapor deposition is controlled by using a relative vapor deposition control data thus prepared. Therefore, each vapor deposition process can be accurately controlled according to the refractive index of a thin film even if repeated vapor deposition processes change the refractive index. Accordingly, a multilayer film having desired optical characteristics can be formed.

Abstract: The invention relates to a method for regulating MF or HF sputtering processes, a harmonic analysis of the electrical discharge parameters being implemented and the MF or HF output and/or the reactive gas flow being regulated on the basis of the analysis results.

Abstract: An apparatus and technique are provided for generating a plasma using a power supply circuit and arc detection arrangement. The power supply circuit has a cathode enclosed in a chamber, and is adapted to generate a power-related parameter. The arc detection arrangement is communicatively coupled to the power supply circuit and adapted to assess the severity of arcing in the chamber by comparing the power-related parameter to at least one threshold. According to various implementations, arc occurrences, arcing duration, intensity and/or energy are measured responsive to comparing the power-related parameter to the at least one threshold. According to further implementations, the above-mentioned measured quantities are accumulated and/or further processed.

Abstract: A sputtering power-supply unit comprises a voltage generation section which generates a sputtering voltage between a negative electrode output terminal and a positive electrode output terminal, and a circuit section which reduces fluctuation in a sputtering current even if an arc discharge occurs between the negative electrode output terminal and the positive electrode output terminal. Thus, fluctuation in the sputtering current can be reduced even if the arc discharge occurs between the negative electrode output terminal and the positive electrode output terminal.

Abstract: A vacuum treatment system has a vacuum treatment chamber, has an ACTUAL value sensor to establish a treatment atmosphere in the form of a regulating element of a control circuit. The treatment atmosphere in the treatment area is modulated according to a defined profile as a function of the workpiece carrier position. The system and process deposits defined layer thickness distribution profiles on substrates in a reactive coating.

Abstract: A magnetron with mechanisms for smoothly and continuously adjusting a DC power applied to its targets to compensate for the changes in the sputtering characteristics of the targets that occur with target aging. A magnetron according to the present teachings includes a set of concentric targets for sputtering a film onto a wafer in response to an AC power and a DC power applied to the targets and a power controller that adjusts the DC power. The adjustments to the DC power enable the magnetron to maintain uniformity in the thicknesses of films formed with the magnetron throughout the life of its targets.

Abstract: An apparatus and method for measuring the erosion profile of a metallic target in a sputtering device is provided by inserting a thin sensor into a gap between the target and a substrate pedestal. The sensor is configured to emit an energy beam toward the surface of the target and to detect a reflection of the energy beam. The sensor may comprise a source element configured to emit a collimated light beam and a plurality of detectors arranged in a linear array. The sensor may also comprise optical fibers configured to reduce the size of the sensor. The detectors are positioned relative to the source element so that one of the detectors in the array will be illuminated by a reflection of the collimated light beam. The distance from the sensor to the target may be derived from the position of the detector illuminated by the reflected beam.

Abstract: The invention relates to a device for coating an object at a high temperature by means of cathode sputtering, having a vacuum chamber and a sputter source, the sputter source having a sputtering cathode. Inside the vacuum chamber is arranged an inner chamber formed from a heat-resistant material, which completely surrounds the sputtering cathode and the object to be coated, at a small spacing, and which has at least one opening to let a gas in and at least one opening to let a gas out.

Abstract: A magnetron sputter reactor for sputtering deposition materials such as nickel and cobalt, for example, and its method of use, in which self-ionized plasma (SIP) sputtering is promoted. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. One embodiment of the present inventions is directed to sputter depositing a metal layer by biasing a sputter target with pulsed power in which the power applied to the target alternates between low and high levels. The high levels are, in one embodiment, sufficiently high to maintain a plasma for ionizing deposition material. The low levels are, in one embodiment, sufficiently low such that the power applied to the target during the high and low levels is, on average, low enough to facilitate deposition of thin layers if desired.

Abstract: The invention embodies a method and apparatus for controlling the thickness of a dielectric film formed by physical vapor deposition (PVD). The method compensates for the continuously varying electrical load conditions inherent in dielectric deposition via PVD. The method can be implemented through three different stages. Initially, the system power supply can be configured to operate in either constant current or constant voltage mode, herein referred to as constant supply parameter mode. Next, a gas composition which minimizes excursions in system impedance under these conditions is empirically determined. Finally, a test deposition can be performed using the constant parameter power supply mode and the gas mixture. This deposition is performed while tracking and summing the energy delivered to the system. The thickness of the deposited film is subsequently measured, and from these data a thickness-per-unit-energy relationship is determined.

Abstract: A process gas source (16) is connected to the vacuum chamber (5), and a metering valve (12) actuated by an automatic controller is installed between the vacuum chamber (5) and the process gas source (16). A potentiometric measurement electrode compares the amount of a gas in the vacuum chamber (5) with a reference gas by way of a reference electrode or with a solid body substituting for the reference electrode and sends a signal to automatic control unit (14), which contains a signal amplifier. The control unit then drives the generator of the power supply or the metering valve for the process gas.

Abstract: A sensor, such as a mass spectrometer, capable of detecting the presence of materials in a sampled gas is interconnected with a processing chamber of a vacuum manufacturing tool. The sensor includes a timing circuit which is activated only if certain levels of specific materials are detected. Furthermore, the timer is set to run a predetermined time interval after activation so as to discriminate between known transient processing conditions and the presence of impurities which can greatly influence the manufacturing process. When the timer exceeds the predetermined time duration, an output signal can alert the process operator or automatically shutdown the manufacturing tool.

Abstract: Since the transfer speed of a substrate is controlled to compensate for a film-forming rate, and an electric power applied to heating means for heating the substrate is controlled so that thermal equilibrium of the substrate is maintained, a film having a uniform thickness and quality can be stably formed even when sputtering is performed for a long time.

Abstract: A DC magnetron sputter reactor for sputtering deposition materials such as tantalum and tantalum nitride, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and capacitively coupled plasma (CCP) sputtering are promoted, either together or alternately, in the same chamber. Also, bottom coverage may be thinned or eliminated by inductively-coupled plasma (ICP) resputtering. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. CCP is provided by a pedestal electrode which capacitively couples RF energy into a plasma. The CCP plasma is preferably enhanced by a magnetic field generated by electromagnetic coils surrounding the pedestal which act to confine the CCP plasma and increase its density.

Abstract: An apparatus and technique are provided for generating a plasma using a power supply circuit and arc detection arrangement. The power supply circuit has a cathode enclosed in a chamber, and is adapted to generate a power-related parameter. The arc detection arrangement is communicatively coupled to the power supply circuit and adapted to assess the severity of arcing in the chamber by comparing the power-related parameter to at least one threshold. According to various implementations, arc occurrences, arcing duration, intensity and/or energy are measured responsive to comparing the power-related parameter to the at least one threshold. According to further implementations, the above-mentioned measured quantities are accumulated and/or further processed.

Abstract: Vacuum coating deposition apparatus and methods employ a vacuum chamber with a superstructure to which deposition components in the vacuum chamber are mounted, such as a sputter target, substrate, etc. to provide a fixed relative position between them substantially unaffected by environmental and operating vibrations and flexure of the chamber wall. The superstructure is structurally independent of the deposition chamber wall and may be housed within the chamber or externally, extending from an external position to or through the wall of the deposition chamber. A meter of sensor, e.g., an optical monitor for measuring film thickness during deposition, continually monitors at least one parameter of the coating deposition and generates a corresponding control signal. A controller responsive to the control signal continually controls at least one process variable of the coating deposition in response to the control signal.

Abstract: The present invention generally provides a physical vapor deposition chamber and a method for detecting a position of a shutter disk within a physical vapor deposition chamber. In one embodiment, a physical vapor deposition chamber includes a chamber body having a shutter disk mechanism disposed therein. A housing is sealingly coupled to a sidewall of the chamber body and communicates therewith through a slot formed through the sidewall. At least a first sensor is disposed adjacent to the housing and orientated to detect the presence of a shutter disk mechanism within the housing. In one embodiment, a method for detecting the position of a shutter disk within a physical vapor deposition chamber having a substrate support generally includes moving the shutter disk away from a substrate support, and changing a state of a first sensor in response to a position of an edge the shutter disk.

Abstract: The present invention provides a method for forming thin films, wherein thin films with a uniform thickness can be formed on substrates as objects such as spheroids, even when the films are formed by conventional film-formation methods using an incident particle beam coming from a specific direction (e.g., evaporation and sputtering). In the method, thin films are formed on substrates such as spheroids with an incident particle beam coming from a particle source located in a specific direction by performing a spin motion together with a swing motion. The spin motion is a rotation of the substrate at a constant angular velocity about the spheroidal axis. The swing motion is a rotational oscillation of the same substrate for rotationally oscillating the axis at a constant cycle in one surface, where the center of the rotational oscillation is in the vicinity of the midpoint between two focal points on the axis of the spheroid.

Abstract: A system and method for sputtering using a plurality of different bias voltages, a plurality of target-cathodes that can be powered at different voltages disposed along said path of travel, and a controller configured to selectively vary the target-cathode voltage and the pallet bias voltage while the pallet moves along the path of travel. The target-cathodes are spaced apart along the path of travel by a distance less than a length of the pallet and on both sides of the path of travel. The controller can include a timing circuit for synchronizing changes in the target-cathode voltages with changes in the pallet bias voltage.

Abstract: Ionized Physical Vapor Deposition (IPVD) is provided by a method of apparatus (500) particularly useful for sputtering conductive metal coating material from an annular magnetron sputtering target (10). The sputtered material is ionized in a processing space between the target (10) and a substrate (100) by generating a dense plasma in the space with energy coupled from a coil (39) located outside of the vacuum chamber (501) behind a dielectric window (33) in the chamber wall (502) at the center of the opening (421) in the sputtering target. A Faraday type shield (26) physically shields the window to prevent coating material from coating the window, while allowing the inductive coupling of energy from the coil into the processing space.

Abstract: A magnetic assembly (15) is mounted on a lead screw (12) on one side of a spunter target (14). A further lead screw (11) carries a counter weight (16). The lead screws can be rotated by a stepper motor (13) to adjust the lateral positions of assembly (15) and weight (16). The stepper motor and hence the assembly (15), can be rotated about a vertical axis by shaft (17) and motor (18) so that a magnetic field can be swept around the target (14). The position of the assembly (15) is varied in accordance with a process characteristic.

Abstract: A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.

Abstract: A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron and an AC magnetron for deposition of a high refractive index film, performs film deposition by each of the AC magnetrons until having achieved 90% of a designed film thickness, and then performs the film deposition only by each of the conventional magnetrons, and which can control the film thickness with high precision and have excellent productivity.

Abstract: A system and method for manufacturing thin-film structures disposed on a substrate. The thin-film structures have different respective thicknesses that vary along a radius of the substrate. A substrate rotates about an axis of rotation and a source of deposited material is directed at the rotating substrate. A mask having a stepped profile is positioned between the rotating substrate and the source. The stepped mask selectively blocks material emanating from the source from reaching the substrate. Each step of the profile of the mask corresponds to one of the respective thicknesses of the thin-film structures. The radius along which the different respective thicknesses of the film-thin structures vary is measured from the axis of rotation of the rotating substrate, and the substrate includes at least one wafer having a center that is either coincident or offset from the axis of rotation.

Abstract: A preferred sputter target assembly (10, 10′) comprises a target (12, 12′), a backing plate (14, 14′) bonded to the target (12, 12′) along an interface (22, 22′) and dielectric particles (20, 20′) between the target (12, 12′) and the backing plate (14, 14′). A preferred method for manufacturing the sputter target assembly (10, 10′) comprises the steps of providing the target (12, 12′) and the backing plate (14, 14′); distributing the dielectric particles (20, 20′) between mating surfaces (24, 26) of the target (12, 12′) and the backing plate (14, 14′), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12′) to the backing plate (14, 14′) along the mating surfaces (24, 26).

Abstract: A system and method for performing sputter deposition includes at least one ion source that generates at least one ion current directed at first and second targets, at least one electron source that generates at least one electron current directed at the first and second targets, and circuitry that biases the first and second targets with independent first and second DC voltage pulse signals. A first current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the first target during one or more cycles of the first DC voltage pulse signal, and a second current sensor, coupled to the biasing circuitry, monitors a positive current and a negative current from the second target during one or more cycles of the second DC voltage pulse signal. A controller, coupled to the first and second current sensors, varies the at least one ion current independently from the at least one electron current.

Abstract: The present invention generally provides a physical vapor deposition chamber and a method for detecting a position of a shutter disk within a physical vapor deposition chamber. In one embodiment, a physical vapor deposition chamber includes a chamber body having a shutter disk mechanism disposed therein. A housing is sealingly coupled to a sidewall of the chamber body and communicates therewith through a slot formed through the sidewall. At least a first sensor is disposed adjacent to the housing and orientated to detect the presence of a shutter disk mechanism within the housing. In one embodiment, a method for detecting the position of a shutter disk within a physical vapor deposition chamber having a substrate support generally includes moving the shutter disk away from a substrate support, and changing a state of a first sensor in response to a position of an edge the shutter disk.

Abstract: Systems and methods of monitoring thin film deposition are described. In one aspect, a thin film deposition sensor includes an acoustical resonator (e.g., a thin film bulk acoustical resonator) that has an exposed surface and is responsive to thin film material deposits on the exposed surface. A substrate clip may be configured to attach the thin film deposition sensor to a substrate. A transceiver circuit may be configured to enable the thin film deposition sensor to be interrogated wirelessly. A method of monitoring a thin film deposition on a substrate also is described.

Abstract: A measuring device useful for measuring mechanical properties of highly flexible or limp sheet materials. The device includes a base, a pair of clamping members, with one of the clamping members being movable away from and toward the second clamping member. A load sensor is mounted in one of the clamping means for measurement of the required mechanical properties.

Abstract: An apparatus for depositing thin films on a plurality of substrates has a vacuum chamber, a source of the material or materials to be deposited as the thin film, a source of energy for causing the material to be vaporized, and mechanical apparatus for imparting super-planetary and planetary motion to each substrate while the substrate is exposed to the vapors of the material. When a predetermined thickness of the film on any given substrate is reached the super-planetary motion is halted and only planetary motion and spinning are continued for the given substrate. During this process the thickness of the film being deposited is monitored accurately by an optical instrument having a linear axis of measurement which coincides with the center of the orbiting planetary motion of the substrate and is on the substrate itself.

Abstract: A method and apparatus for depositing a film on a substrate comprising a deposition interval wherein DC power is applied to a target to form a first plasma and material is sputtered from the target onto a substrate and, during a subsequent forming interval, high frequency power is applied to the target to remove material from at least a portion of the substrate. The sputtering working gas admitted to the chamber may be maintained at a first pressure during the deposition interval and the pressure of the sputtering working gas may be increased to a second pressure during the forming interval.

Abstract: An apparatus and technique are provided for generating a plasma using a power supply circuit and arc detection arrangement. The power supply circuit has a cathode enclosed in a chamber, and is adapted to generate a power-related parameter. The arc detection arrangement is communicatively coupled to the power supply circuit and adapted to assess the severity of arcing in the chamber by comparing the power-related parameter to at least one threshold. According to various implementations, arc occurrences, arcing duration, intensity and/or energy are measured responsive to comparing the power-related parameter to the at least one threshold. According to further implementations, the above-mentioned measured quantities are accumulated and/or further processed.

Abstract: A method of adjusting plasma processing of a substrate in a plasma reactor having an electrode assembly. The method includes the steps of positioning the substrate in the plasma reactor, creating a plasma in the plasma reactor, monitoring optical emissions emanating from a plurality of different regions of the plasma in a direction substantially parallel to the surface of the substrate during plasma processing of the substrate, and determining an integrated power spectrum for each of the different plasma regions and comparing each of the integrated power spectra to a predetermined value. One aspect of the method includes utilizing an electrode assembly having a plurality of electrode segments and adjusting RF power delivered to the one or more electrode segments based on differences in the integrated power spectra from the predetermined value.

Abstract: A method and device applicable to HV generators and X-ray tubes, and a computer program and support for the program. In the method a determination is made of a scale of values representing the energy of the radio-frequency spectrum transmitted by radio wave over a given period in the electric discharges appearing in the system for a given test voltage, by artificially varying in the system the level of pollution of the system until dielectric failure of the system. A limiting value is chosen embracing the admissible pollution tolerances on manufacture. A measurement is made for each system of the same product type of the quantity of energy of the radio-frequency spectrum transmitted by radio wave by each of the systems under the same conditions. A comparison is made of the quantities measured with the limiting value chosen to determine a possible fluctuation of quality of the systems produced.

Abstract: Thickness uniformity of films sputtered from a target onto a series of substrates is maintained as the target surface shape changes due to the consumption of the target. The eroded condition of the target is sensed by directly measuring the position of a point on the target surface, by measuring power consumption of the target, by measuring deposition from the surface of the target or by some other means. A controller responds to the measurement by moving a substrate holder to determine an amount to change the distance between the substrate and the target, usually by moving the substrate closer to the target, by an amount necessary to maintain uniformity of the coatings on the wafers being processed. A servo or stepper motor responds to a signal from the controller to move the substrate holder in accordance with the determined amount of distance change required. The adjustment is made following the coating of wafers at various times over the life of the target.

Abstract: A first target is arranged opposite a substrate while a second target is arranged not opposite the substrate within a vacuum chamber. Pressure within the vacuum chamber is adjusted to a first pressure, and during a period wherein the pressure is changed from the first pressure to a second pressure which is lower than the first pressure, plasma density above the second target is made greater than plasma density above the first target. At a time point when the second pressure is reached, the plasma density above the first target is made greater than the plasma density above the second target.

Abstract: Uniformity of a sputtered conductive barrier layer (50) or seed layer (52) across a semiconductor substrate (18, 42) is improved by incorporating a plurality of electromagnets (26) in or around the sputtering chamber (14) which can be independently powered. In other words, each individual electromagnet can be turned on or off, and/or the amount of power being supplied to each electromagnet (and thus the magnetic field generated by each electromagnet) can be varied independently. Further, the sputtering system (10) includes connection to a computer (30) that is either integral to or connected to a metrology tool (28). The metrology tool measures uniformity of a layer deposited by the sputtering system, analyzes the measurements and feeds back information to the sputtering system as to how to vary the power being supplied to the plurality of electromagnets to improve layer uniformity.

Abstract: Apparatus (10) for treating a substrate, comprising: a vacuum chamber (12); a substrate carrier (14) adapted to carry a substrate (16) to be treated; a source material holder (22) for holding a source material (34) with which the substrate (16) is to be treated; and vaporising or sputtering means (20) for vaporising/sputtering the source material (34); wherein the source material holder (22) includes a positioning means (24) for relatively moving the source material (34) towards the substrate carrier (14).

Abstract: A system and method for controlling a deposition thickness distribution over a substrate. A motor rotates the substrate, and at least one sensor senses the deposition thickness of the substrate at two or more radii on the substrate. An actuator varies a shadow of a mask disposed over a target used to sputter material on the substrate. An ion source generates an ion beam that is directed toward the target. The mask is positioned between the ion source and the target, and selectively blocks ion current from the ion source from reaching the target. A process controller is coupled to the deposition thickness sensor and the actuator. In response to the sensed deposition thickness, the process controller varies the shadow of the mask with respect to the target to control the deposition thickness distribution over the substrate.

Abstract: The present invention generally provides a physical vapor deposition chamber and a method for detecting a position of a shutter disk within a physical vapor deposition chamber. In one embodiment, a physical vapor deposition chamber includes a chamber body having a shutter disk mechanism disposed therein. A housing is sealingly coupled to a sidewall of the chamber body and communicates therewith through a slot formed through the sidewall. At least a first sensor is disposed adjacent to the housing and orientated to detect the presence of a shutter disk mechanism within the housing. In one embodiment, a method for detecting the position of a shutter disk within a physical vapor deposition chamber having a substrate support generally includes moving the shutter disk away from a substrate support, and changing a state of a first sensor in response to a position of an edge the shutter disk.

Abstract: A vacuum treatment system has a vacuum treatment chamber, with a sensor arrangement to detect the treatment atmosphere momentarily existing in the treatment area. An ACTUAL value sensor of the sensor arrangement for one or more of the elements to establish a treatment atmosphere is a regulating element of a control circuit for the treatment atmosphere in the treatment area. A workpiece carrier is drivably movable in the chamber through the treatment area having the treatment atmosphere. At least one of the elements modulates the treatment atmosphere in the treatment area according to a defined profile as a function of the workpiece carrier position. A process is disclosed for manufacturing workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with the defined profile.

Abstract: A whole organic EL display fabricating apparatus is provided inside a vacuum chamber. In this case, a first patterning unit B through a third patterning unit D for sequentially forming luminescent layer patterns of GREEN, BLUE, and RED on an anode pattern on a strip-shaped flexible substrate 1, and a fourth patterning unit E for forming a cathode pattern on the subsequent stage are provided. The first patterning unit B is provided with a first cooling can 21 and a vacuum vapor deposition unit below for forming the luminescent layer pattern of GREEN. The structures of the second patterning unit through the fourth patterning unit are similar to that of the first patterning unit. In fabricating a display, the substrate 1 is caused to travel from the first cooling can 21 toward a fourth cooling can 64 by the roll-to-roll system.

Abstract: A vacuum treatment system has a vacuum treatment chamber, with a sensor arrangement to detect the treatment atmosphere momentarily existing in the treatment area. An ACTUAL value sensor of the sensor arrangement for one or more of the elements to establish a treatment atmosphere is a regulating element of a control circuit for the treatment atmosphere in the treatment area. A workpiece carrier is drivably movable in the chamber through the treatment area having the treatment atmosphere. At least one of the elements modulates the treatment atmosphere in the treatment area according to a defined profile as a function of the workpiece carrier position. A process is disclosed for manufacturing workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with the defined profile.

Abstract: Sequential sputtered film deposition of distinct materials on a workpiece is obtained with discrete targets composed of such distinct materials disposed on separate area portions of a common cathode/heatsink. Sputtering without cross contamination of the deposited films is enabled during an interval of relative motionbetween the target and workpiece or in an indexed static relative disposition, wherein the workpiece projection is entirely proximate one such portion to deposit the respective layer.

Abstract: A vacuum chamber deposits thin films on a substrate by sputtering a target. The beam of atoms or ions from the target is partially blocked by a shadow or adjustable uniformity mask, reducing the deposition rate onto the substrate. The adjustable uniformity mask has several adjustable fingers. The fingers extend or retract to enlarge or reduce the size of the mask. Each finger covers a different annular region or radius of the substrate. The deposition rate at different substrate radii is thus adjustable by the fingers. Several optical beams monitor the film transmittance at different substrate radii. A transmittance profile is continually generated during deposition. As deposition proceeds, radii with a thicker film have their fingers extended to reduce their deposition rate, producing a more uniform film thickness across all radii. Motors extend or retract the individual fingers.

Abstract: A system and method for sputter depositing a protective coating on a surface. The system includes a coating device, a first material for coating, a second material for coating and a surface to be coated. Preferably, the first material and the second material are sputter deposited on the surface in a predetermined proportion to yield a coating having tailored thermophysical and surface resistance properties. The proportion may be controlled by controlling exposed surface area of the first material and exposed surface area of the second material, as well as a magnetic field applied to the first and second materials.

Abstract: A method and apparatus for monitoring and controlling reactive sputter deposition, particularly useful for depositing insulating compounds (e.g., metal-oxides, metal-nitrides, etc.). For a given nominal cathode power level, target material, and source gases, the power supplied to the cathode (target) is controlled to stabilize the cathode (target) voltage at a specified value or within a specified range corresponding to a partial pressure or relative flow rate value or range of the reactive gas. Such an operating point or range, characterized by a specified voltage value or range and corresponding reactive gas relative-flow/partial-pressure value or range, may be determined empirically based on measuring the cathode voltage as a function of reactive gas relative-flow/partial-pressure for the given nominal power.

Abstract: A vacuum treatment system in which a part (9) is provided inside a vacuum treatment chamber (1). A potential (&phgr;9) which deviates from the system reference potential (&phgr;0) by approximately at least ±12 V is applied to said part. A sensor and/or an actuator (11) is/are arranged on said part. In addition, the invention comprises an electronic unit (13) which is connected to the sensor and/or actuator. Processing signals on the unit (13) is considerably simplified in that the electronic unit (13) is operated as a reference potential on the potential (&phgr;9) of said part (9).

Abstract: Methods and systems are provided for depositing a magnetic film using one or more long throw magnetrons, and in some embodiments, an ion assist source and/or ion beam source. The long throw magnetrons are used to deposit particles at low energy and low pressure, which can be useful when, for example, depositing interfacial layers or the like. An ion assist source can be added to increase the energy of the particles provided by the long throw magnetrons, and/or modify or clean the layers on the surface of the substrate. An ion beam source can also be added to deposit layers at a higher energies and lower pressures to, for example, provide layers with increased crystallinity. By using a long throw magnetron, an ion assist source and/or an ion beam source, magnetic films can be advantageously provided.

Abstract: A method of adjusting plasma processing of a substrate in a plasma reactor having an electrode assembly. The method includes the steps of positioning the substrate in the plasma reactor, creating a plasma in the plasma reactor, monitoring optical emissions emanating from a plurality of different regions of the plasma in a direction substantially parallel to the surface of the substrate during plasma processing of the substrate, and determining an integrated power spectrum for each of the different plasma regions and comparing each of the integrated power spectra to a predetermined value. One aspect of the method includes utilizing an electrode assembly having a plurality of electrode segments and adjusting RF power delivered to the one or more electrode segments based on differences in the integrated power spectra from the predetermined value.