Abstract: An apparatus and method incorporating at least two sensors that detect the presence of a substrate is provided. In one embodiment, a method for transferring a substrate in a processing system is described. The method includes positioning a substrate on an end effector in a first chamber, moving the substrate through an opening between the first chamber and a second chamber along a substrate travel path, and sensing opposing sides of the substrate travel path using at least two sensors positioned proximate to the opening, each of the at least two sensors defining a beam path that is directed through opposing edge regions of the substrate when at least a portion of an edge region traverses the beam path.

Abstract: Sputtering targets having a reduced burn-in time are described herein, where the target comprises an atmospheric plasma-treated surface material having at least about 10% reduced residual surface damage as compared to the residual surface damage of the surface material prior to atmospheric plasma treatment. Sputtering targets having reduced burn-in times are also described herein that include: a) an atmospheric plasma-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the atmospheric plasma-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material.

Abstract: An apparatus and method to deposit a MgO film on a large substrate area. The method includes applying a voltage to one or more magnesium targets; applying an electric current to the one or more magnesium targets when the voltage stops increasing so that a power with a negative square wave, which does not cause mutual interfere, is applied to the one or more magnesium targets; and forming a MgO film on a substrate using magnesium particles emitted from the one or more magnesium targets by the power applied.

Abstract: A method of automatic deposition profile targeting for electrochemically depositing copper with a position-dependent controllable plating tool including the steps of depositing copper on a patterned product wafer, measuring an actual thickness profile of the deposited copper and generating respective measurement data, feeding the measurement data to an advanced process control (APC) model and calculating individual corrections for plating parameters in the position-dependent controllable plating tool.

Abstract: A pulse plasma matching system includes an RF matching box configured to receive an RF power pulse generated by an RF power source, configured to perform a plasma impedance matching, and configured to apply the RF power pulse to a process chamber, and a network analyzer configured to measure an impedance of plasma generated in a process chamber. A controller is configured to generate a capacitance control signal corresponding to a plasma impedance value measured by the network analyzer, configured to supply the capacitance control signal to the RF matching box, and configured to generate an impedance matching compensation pulse, and a phase shifter is configured to receive the impedance matching compensation pulse and to shift a phase of the impedance matching compensation pulse to synchronize the impedance matching compensation pulse to the RF power pulse.

Abstract: A measuring device includes several sequentially disposed coating chambers for measuring optical properties of coated substrates. These coating chambers are separated from one another by partitioning walls, whose free ends are located closely above the substrate. The substrate is preferably a continuous film. By measuring the reflection, the transmission, etc. of the substrate between the individual coating chambers, it becomes possible to carry out measurements within only partially completed layer systems. This yields advantages for the technical operation control of the coating process.

Abstract: An apparatus for plating includes a plating bath for plating copper (Cu) film on the surface of a substrate under a prescribed plating condition using a plating solution, a chemical supplying unit for supplying each components constituting the plating solution into the plating bath, a plating solution analyzing unit for analyzing a concentration of a predetermined component contained in the plating solution, a plating controlling unit for storing correlation data between a parameter representing a state of the plating solution and the plating condition, extracting the parameter relating the plating solution, and determining the predetermined plating condition based on the parameter and the stored correlation data.

Abstract: A method and system for conditioning a vapor deposition target is described. In one illustrative embodiment, a vapor deposition system is operated in which a vapor deposition target is used, the occurrence of electrical arcs in the vapor deposition system is detected, and the vapor deposition target is conditioned by adjusting an output current of a power supply that powers the vapor deposition system and adjusting an interval during which energy is delivered to each arc to deliver substantially the same energy to each arc. In some embodiments, the energy delivered to each arc is approximately equal to the maximum energy that the vapor deposition target can withstand without being damaged. The described method and system significantly reduces the time required to remove impurities from a target and does not require the venting of the vacuum chamber or the removal of the target from the chamber.

Abstract: A sputtering film forming method. which positions a target 4 and 5 at an incline to a surface of a substrate 10 whereupon a film is to be formed, and forms the film upon the surface of the substrate 10 whereupon the film is to be formed in an incline direction while the substrate 10 is rotated about a normal axis, terminates the forming of the film at a predetermined timing from the commencement of the forming of the film, wherein the forming of the film is terminated, when the substrate has rotated by 360 degrees×n+180 degrees+?, where n is a natural number, including 0, and ?10 degrees<?<10 degrees.

Abstract: The invention relates to apparatus and a method for depositing material onto substrates, particularly optical substrates, to form a coating thereon. The apparatus and method incorporates the use of a series of magnetrons provided to be controlled to sputter deposit material provided in targets mounted therein, on to the substrates. There is provided a voltage to the magnetrons to operate the same and the level of voltage which is required to form required coating or coating layer characteristics is determined by using monitoring apparatus, at least when forming the coating or coating layer for the first time. The appropriate voltage level data for operation of the magnetrons can be held in a database and subsequently used to control the voltage level when forming an identified coating or layers of coatings.

Abstract: A method and control system are provided for depositing a layer in a sputter-deposition system having a target cathode. A first dependence relationship of a deposition rate of the layer on an operating parameter, selected from cathode voltage, cathode current, and cathode power, is provided prior to deposition of the layer. A second dependence relationship of the operating parameter on time is measured during deposition of the layer, while a different operating parameter, also selected from cathode voltage, cathode current, and cathode power, is held substantially constant. On the basis of the first and second dependence relationships, a deposition time for the layer is dynamically determined during deposition of the layer.

Abstract: A method and sputter-deposition system for depositing a layer composed of a mixture of materials and having a predetermined refractive index are provided. The sputter-deposition system includes a plurality of target cathodes, each of which comprises a target material having a different composition, that are powered by a single DC power supply. The plurality of target cathodes are cosputtered to deposit a layer composed of a mixture of materials on a substrate. The composite refractive index of the layer is controlled by adjusting an operating parameter of the plurality of target cathodes. Suitable operating parameters include cathode power, cathode voltage, cathode current, an angle between a cathode support and the substrate, and a flow rate of a reactive gas.

Abstract: This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces a gas into the plasma accelerator. A cathode emits electrons attracted to the anode for ionizing the gas and neutralizing ion flux emitted from the plasma accelerator. An electrical circuit coupled between the anode and the cathode having a DC power source provides DC voltage. A magnetic circuit structure including a magnetic field source establishes a transverse magnetic field in the plasma accelerator that creates an impedance to the flow of the electrons toward the anode to enhance ionization of the gas to create plasma and which in combination with the electric circuit establishes an axial electric field in the plasma accelerator.

Abstract: The invention relates to an energy and media connection module for coating installations. Said module serves for supplying with cooling water, compressed air, process gases, signal, control and cathode power. It can be moved from one coating chamber to another coating chamber along a coating line by a single person in a short time. Further, it is possible to separate the energy connection module from a coating chamber for maintenance or displacement purposes without mechanically demounting all connections.

Abstract: A film formation apparatus that forms a metal film on a substrate is provided. The film formation apparatus includes: a chamber that holds therein the substrate; a material holding section that holds a metal material as a material for the metal film in the chamber; a film formation section that forms the metal film on the substrate by using the metal material; an introduction section that introduces gas into the chamber; and a partial pressure control section that controls the partial pressure of the gas in the chamber to cause the film formation section to form the metal film having a desired density.

Abstract: An apparatus for generating sputtering of a target to produce a coating on a substrate is provided. The apparatus comprises a magnetron including a cathode and an anode. A power supply is operably connected to the magnetron and at least one capacitor is operably connected to the power supply. The apparatus also includes an inductance operably connected to the at least one capacitor. A first switch and a second switch are also provided. The first switch operably connects the power supply to the magnetron to charge the magnetron and the first switch is configured to charge the magnetron according to a first pulse. The second switch is operably connected to discharge the magnetron. The second switch is configured to discharge the magnetron according to a second pulse.

Abstract: An arc discharge in a plasma process is detected using a method that includes detecting arc discharges by monitoring one or more characteristic values of the plasma process, and comparing at least a first characteristic value with a predefinable first threshold value (SW1). When it is determined that the at least first characteristic value reaches the first threshold value, a potential arc discharge is recognized and a first countermeasure is triggered to suppress the arc discharge. The method includes comparing at least a second characteristic value with a pre-definable second threshold value (SW2) that differs from the first threshold value, and when it is determined that the second characteristic value reaches the second threshold value, triggering a second countermeasure for suppressing the arc discharge. After the second countermeasure has been triggered, a renewed triggering of the second countermeasure is prevented during a blocking time (Tt).

Abstract: A magnetron sputtering apparatus has a controller for selectively releasing the spread of plasma on a substrate on a support. The controller can also contain the plasma when the substrate is to be coated with the target material. This enables cleaning of the target surface during intervals between deposition of target material onto a desired substrate, such as a wafer, and ensures that layers or flakes of back-scattered deposited target material do not build up on the target itself. A platen coil is located between the magnetron and the support to increase both uniformity and density of target material arriving nearly normal to the substrate surface.

Abstract: A plasma CVD apparatus comprises a reaction container for allowing a reaction for forming a thin film on a semiconductor wafer to be performed, a bias electrode which applies a high frequency bias for sputtering to the semiconductor wafer, a nozzle which supplies SiH4 gas including at least hydrogen into the reaction container, and a control circuit which on/off-controls the high frequency bias through a switch and which on/off-controls the supply of SiH4 gas through a flow rate controller based on an opposite control logic to a high frequency bias control logic.

Abstract: A method and apparatus for sputter deposition in which both a pulsed DC power supply and an RF power supply apply power to the target in the sputter deposition equipment. The pulsed DC power supply provides an on cycle where power is applied to the target, and an off cycle, in which a reverse polarity is applied to the target. The application of the reverse polarity has the effect of removing any charge that may have built up on the surface of the target. This reduces the likelihood of arcing occurring on the surface of the target, which can degrade the quality of the film being deposited on the substrate. By applying RF power simultaneously with the pulsed DC power to the target, the ionization efficiency on the target surface is increased. This results in a greater amount of material being removed from the target surface more quickly.

Abstract: A system and method for feedforward control in thin film coating processes. A standard PID feedback control system that continuously monitors two or more process variables in a reactive sputtering process is combined with a feedforward control system to improve system performance. The control system enables much faster stabilization of the reactive sputtering process during target start-up, and improves control of the process once a steady-state operating condition has been reached following target start-up.

Abstract: A process for fabricating a patterned medium including a dot-forming step for forming a dot array constituted by sample magnetic dots having a predetermined size such as a single domain particle size determined theoretically from the magnetic metal thin for a sample medium having a magnetic metal film formed with the initial conditions; a demagnetization step for AC-demagnetizing the dot array; a ratio measurement step for measuring the ratio of single magnetic domains by observing the magnetic pattern of each of the sample dots after the AC-demagnetization; and an adjustment step for determining conditions of the sputtering apparatus for forming a solid state magnetic metal thin film by adjusting the film-forming conditions such that the ratio of the single magnetic domains equals to or exceeds a predetermined value.

Abstract: There is provided by this invention a wafer probe for measuring plasma and surface characteristics in plasma processing environment that utilizes integrated sensors on a wafer substrate. A microprocessor mounted on the substrate receives input signals from the integrated sensors to process, store, and transmit the data. A wireless communication transceiver receives the data from the microprocessor and transmits information outside of the plasma processing system to a computer that collects the data during plasma processing. The integrated sensors may be dual floating Langmuir probes, temperature measuring devices, resonant beam gas sensors, or hall magnetic sensors. There is also provided a self-contained power source that utilizes the plasma for power that is comprised of a topographically dependent charging device or a charging structure that utilizes stacked capacitors.

Abstract: A multi-track magnetron having a convolute shape and asymmetric about the target center about which it rotates. A plasma track is formed as a closed loop between opposed inner and outer magnetic poles, preferably as two or three radially arranged and spirally shaped counter-propagating tracks with respect to the target center and preferably passing over the rotation axis. The pole shape may be optimized to produce a cumulative track length distribution conforming to the function L=arn. After several iterations of computerized optimization, the pole shape may be tested for sputtering uniformity with different distributions of magnets in the fabricated pole pieces. If the uniformity remains unsatisfactory, the design iteration is repeated with a different n value, different number of tracks, or different pole widths. The optimization reduces azimuthal sidewall asymmetry and improves radial deposition uniformity.

Abstract: A process is disclosed for manufacturing coated substantially plane workpieces, in which the workpieces are guided to a vacuum treatment area guided by a control. The treatment atmosphere is modulated in the treatment area as a function of workpiece position with the defined profile. The system and process can be used to deposit defined layer thickness distribution profiles on substrates in a reactive coating.

Abstract: An observation window airtightly installed at a wall of a processing room of a plasma processing apparatus includes a body having a through hole with an opening facing the processing room, a transparent member installed at a side of the body opposite to the processing room and a magnetic pole pair having two different magnetic poles disposed opposite each other with the hole interposed therebetween. The magnetic pole pair is configured to have a sufficient magnetic field strength to prevent electrons which form a plasma in the processing room from reaching the transparent member through the hole.

Abstract: A plasma processing method using a plasma processing apparatus having a process chamber in which a substrate is subjected to a plasma processing, a light-receiving part, a spectrometer unit, an arithmetic unit, a database, a determination unit for determining that an end point of seasoning is reached as a condition of the process chamber, and an apparatus controller. The method includes the steps of converting a multi-channel signal output from the spectrometer unit into a batch of output signals, finding differences between the output signals and output signals of a preceding batch, determining the average value of the differences in one batch, the difference between the maximum and the minimum of the differences in one batch and the standard deviation of the differences in one batch, and comparing the determined values with a preset threshold.

Abstract: Magnetically enhanced sputtering methods and apparatus are described. A magnetically enhanced sputtering source according to the present invention includes an anode and a cathode assembly having a target that is positioned adjacent to the anode. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the sputtering target. A power supply produces an electric field in a gap between the anode and the cathode assembly. The electric field generates excited atoms in the weakly ionized plasma and generates secondary electrons from the sputtering target. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma having ions that impact a surface of the sputtering target to generate sputtering flux.

Abstract: A plasma processing apparatus having a process chamber in which an object to be processed is subjected to plasma processing includes a light-receiving part for a spectrometer unit, an arithmetic unit, a database, a determination unit and an apparatus controller. The determination unit determines a condition in the processing chamber that an end point of seasoning is reached. The determination of the condition is performed so that one or more differences between one or more output signals derived from a batch of plasma emission data by multivariate analysis and one or more output signals derived from a preceding batch of plasma emission data are found, an average value of the differences in one batch, a difference between a maximum and a minimum of the differences in one batch and a standard deviation of the differences in one batch are determined, and the values are compared with a preset threshold.

Abstract: The present invention relates to a method for determining a critical size for a diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) to prevent arcing during sputtering thereof. This method includes providing a sputtering apparatus having an argon plasma. The plasma has a plasma sheath of a known thickness during sputtering under a selected sputtering environment of an Al or Al alloy sputter target having an Al2O3 inclusion-free sputtering surface. When the thickness of the sheath is known for a selected sputtering environment, the critical size of an Al2O3 inclusion (38) can be determined based upon the thickness of the sheath. More specifically, the diameter of an Al2O3 inclusion (38) in an Al or Al alloy sputter target (42) must be less than the thickness of the plasma sheath during sputtering under the selected sputtering environment to inhibit arcing.

Abstract: A preferred sputter target assembly (10, 10?) comprises a target (12, 12?), a backing plate (14, 14?) bonded to the target (12, 12?) along an interface (22, 22?) and dielectric particles (20, 20?) between the target (12, 12?) and the backing plate (14, 14?). A preferred method for manufacturing the sputter target assembly (10, 10?) comprises the steps of providing the target (12, 12?) and the backing plate (14, 14?); distributing the dielectric particles (20, 20?) between mating surfaces (24, 26) of the target (12, 12?) and the backing plate (14, 14?), most preferably along a sputtering track pattern on one of the mating surfaces; and bonding the target (12, 12?) to the backing plate (14, 14?) along the mating surfaces (24, 26).

Abstract: Plasma etching or resputtering of a layer of sputtered materials including opaque metal conductor materials may be controlled in a sputter reactor system. In one embodiment, resputtering of a sputter deposited layer is performed after material has been sputtered deposited and while additional material is being sputter deposited onto a substrate. A path positioned within a chamber of the system directs light or other radiation emitted by the plasma to a chamber window or other optical view-port which is protected by a shield against deposition by the conductor material. In one embodiment, the radiation path is folded to reflect plasma light around the chamber shield and through the window to a detector positioned outside the chamber window.

Abstract: The present invention provides an efficient thin film forming apparatus which is capable of correcting a film thickness so as to take care of a variation in distribution in the film thickness and to take care of the circumferential distribution of the film thickness, as well as a method for forming a thin film using this film forming apparatus.

Abstract: A plasma processing apparatus and method are capable of performing etching with high precision without damaging the semiconductor wafer. The plasma processing apparatus has a plasma generation power supply for generating a plasma within a processing chamber; a high-frequency power supply for applying a high frequency wave to a sample stage installed within the processing chamber; and control means for controlling the plasma generation power supply or the high-frequency power supply based on parameter settings for an output intensity and an output mode for each process step. In this regard, when the process steps are switched, the control means compares parameters for a current process step with those for a next process step and then switches either the output intensities or the output modes before switching the output modes or the output intensities, respectively.

Abstract: The present invention is directed at least in part to methods and apparatus for optically monitoring selected optical characteristics of coatings formed on substrates during the deposition process and controlling the deposition process responsive thereto. In one aspect, the system includes a retroreflector for reflecting an electromagnetic beam transmitted by the coating and substrate back through the substrate and coating before selected properties of the retroreflected beam are measured. The system and method improve the signal to noise properties of the measured beam. The present invention may be used in systems for coating one or an array of substrates, and is particularly suitable for deposition processes where the substrates are translated past the sources of material to be deposited, and wherein the angle of incidence of a monitor beam on the substrate changes as the substrate translates past the beam source.

Abstract: Apparatus and methods for measuring characteristics of a metallic target as well as other interior surfaces of a sputtering chamber. The apparatus includes a sensor configured to emit an energy beam toward a surface of interest and to detect an energy beam therefrom, the detected energy beam being indicative of parameters of a characteristic of interest of the surface of interest. Quantitative and qualitative characteristics of interest may be determined. A sputtering system including the apparatus and operable according to the methods of the invention is also disclosed.

Abstract: An apparatus and method for depositing plural layers of materials on a substrate within a single vacuum chamber allows high-throughput deposition of structures such as these for GMR and MRAM application. An indexing mechanism aligns a substrate with each of plural targets according to the sequence of the layers in the structure. Each target deposits material using a static physical-vapor deposition technique. A shutter can be interposed between a target and a substrate to block the deposition process for improved deposition control. The shutter can also preclean a target or the substrate and can also be used for mechanical chopping of the deposition process. In alternative embodiments, plural substrates may be aligned sequentially with plural targets to allow simultaneous deposition of plural structures within the single vacuum chamber.

Abstract: Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma.

Abstract: Methods and apparatus for high-deposition sputtering are described. A sputtering source includes an anode and a cathode assembly that is positioned adjacent to the anode. The cathode assembly includes a sputtering target. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A power supply produces an electric field between the anode and the cathode assembly that creates a strongly-ionized plasma from the weakly-ionized plasma. The strongly-ionized plasma includes a first plurality of ions that impact the sputtering target to generate sufficient thermal energy in the sputtering target to cause a sputtering yield of the sputtering target to be non-linearly related to a temperature of the sputtering target.

Abstract: A method of manufacturing an object in a vacuum treatment apparatus having a vacuum recipient for containing an atmosphere, includes the steps of supporting a substrate on a work piece carrier arrangement in the recipient and treating the substrate to manufacture the object in the vacuum recipient. The treating process includes generating electrical charge carriers in the atmosphere and in the recipient which are of the type that form electrically insulating material and providing at least two electroconductive surfaces in the recipient. Power, such as a DC signal, is supplied to at least one of the electroconductive surfaces so that at least one of the electroconductive surfaces receives the electrically insulating material for covering at least part of that electroconductive surface. This causes electrical isolation of that electroconductive surface which leads to arcing and damage to the object.

Abstract: In a process and apparatus for coating the front and/or rear facets of semiconductor laser diodes with antireflection layers of minimal reflectivity, the coating material is deposited on the facets while at least one laser parameter is monitored, in-situ, for determining the coating thickness of the individual antireflection layers resulting in the minimum reflectivity of the coating and the respective coating procedure is terminated when the laser parameter indicates that such coating thickness has been reached.

Abstract: A sputtering apparatus and a sputter film deposition method, which includes a conventional magnetron and an AC magnetron for deposition of a low refractive index film, and a conventional magnetron and an AC magnetron for deposition of a high refractive index film, performs film deposition by each of the AC magnetrons until having achieved 90% of a designed film thickness, and then performs the film deposition only by each of the conventional magnetrons, and which can control the film thickness with high precision and have excellent productivity.

Abstract: The invention relates to a device for the regulation of a plasma impedance in a vacuum chamber, wherein at least one electrode is connected to an AC generator. This AC generator is a free-running [oscillator], whose frequency adjusts to the resonance frequency of the load upon which it acts. This load comprises fixed circuit elements and a variable plasma impedance. If the plasma impedance is changed, with it the resonance frequency is also changed. The plasma impedance can thus be varied by acquisition of the resonance frequency and by presetting of a reference frequency value, for example thereby that the voltage, the current, the power or the gas inflow is varied as a function of the difference between resonance frequency and reference frequency value.

Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

Abstract: A small unbalanced magnet assembly is scanned in a retrograde planetary or epicyclic path about the back of a target being plasma sputtered including an orbital rotation about the center axis of the target and a planetary rotation about another axis rotating about the target center axis. The magnet assembly may pass through the target center, thus allowing full target coverage. A geared planetary mechanism may include a rotating drive plate, a fixed center gear, and an idler and a follower gear rotatably supported in the drive plate supporting a cantilevered magnet assembly on the side of the drive plate facing the target. The erosion profile may be controlled by varying the rotation rate through the rotation cycle or by modulating the target power. A second planetary stage may be added or non-circular gears be used. Auxiliary electromagnetic coils may create a focusing magnetic field.

Abstract: The use of impedance measurements to detect the presence of pathogens attached to antibody-coated beads. In a fluidic device antibodies are immobilized on a surface of a patterned interdigitated electrode. Pathogens in a sample fluid streaming past the electrode attach to the immobilized antibodies, which produces a change in impedance between two adjacent electrodes, which impedance change is measured and used to detect the presence of a pathogen. To amplify the signal, beads coated with antibodies are introduced and the beads would stick to the pathogen causing a greater change in impedance between the two adjacent electrodes.

Abstract: The use of impedance measurements to detect the presence of pathogens attached to antibody-coated beads. In a fluidic device antibodies are immobilized on a surface of a patterned interdigitated electrode. Pathogens in a sample fluid streaming past the electrode attach to the immobilized antibodies, which produces a change in impedance between two adjacent electrodes, which impedance change is measured and used to detect the presence of a pathogen. To amplify the signal, beads coated with antibodies are introduced and the beads would stick to the pathogen causing a greater change in impedance between the two adjacent electrodes.

Abstract: A processing apparatus is presented for applying to a substantially flat workpiece contained in a cassette, and a processing tool coupled to the housing. The processing tool is displaceable along three mutually perpendicular axes relative to the cassette for inserting the tool into the gap and moving the tool inside the gap relative to the workpiece. The processing apparatus can be utilized in chemical mechanical polishing arrangement, photolithography arrangement, and CVD arrangement.

Abstract: The invention includes an apparatus and method for determining the pass through flux of magnetic materials. The apparatus comprises one or more magnetic field sensors arranged in such a way as to collect field strength data in any or all the x, y, z directions. The apparatus also comprises a magnet field source or arrangement of magnet field sources which are placed beneath the material being characterized and includes a mechanism whereby the magnetic material can be mapped by the movement of any one or combination of: magnetic field source or sources, sensors and magnetic material. The invented method comprises the use of various configurations of magnetic sources in order to generate a magnetic field that emulates the open-loop condition found in magnetron sputtering.

Abstract: An apparatus and method for measuring the erosion profile of a metallic target in a sputtering device are provided by inserting a thin sensor into a gap between the target and a substrate pedestal. The sensor is configured to emit an energy beam toward the surface of the target and detect a reflection of the energy beam. The sensor may comprise a source element configured to emit a collimated light beam and a plurality of detectors arranged in a linear array. The sensor may also comprise optical fibers configured to reduce the size of the sensor. The detectors are positioned relative to the source element so that one of the detectors in the array will be illuminated by a reflection of the collimated light beam. The distance from the sensor to the target may be derived from the position of the detector illuminated by the reflected beam.