Abstract: A radiation measurement device comprising a case which is formed of insulating material to be flat, a common electrode substrate having a common electrode which is provided at one surface and a signal electrode substrate having a plurality of signal electrodes which are provided at one surface, wherein the common electrode substrate and the signal electrode substrate are arranged parallel to the direction in which the case extends flat so as for the common electrode and the signal electrode to face each other having a gap, each signal line is connected to each of the plurality of signal electrodes, each of the signal lines is led out from a signal line leading out part which is provided at the case to outside of the case, wherein an inner surface or an outer surface of a case wall which forms the case is covered with a conductor.

Abstract: Embodiments utilize high energy particles generated by nuclear reactions involving neutron radiation and neutron-sensitive materials to generate and maintain an electric potential gradient between an electrode and a region separated from the electrode by an electric insulator. System and methods contemplated by the invention thereby enable passive detection of neutrons without an externally applied electric potential bias by maintaining a charge accumulation facilitated by nuclear reactions involving neutrons. The charge accumulation produces an electric potential gradient within an electric insulator that separates the charge accumulation from an exterior region.

Abstract: A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.

Abstract: A system and method of quantifying color and intensity of light sources including LEDs, HBLEDs (High Brightness LEDs), and other Solid State Lights (SSLs) using C-parameters to model a Spectral Power Distribution (SPD) to improve precision, accuracy, repeatability and usefulness of measurement of optical properties of wavelength and radiant flux in manufacturing of an object, designing products and processes that use the object, and describing/defining the object, is provided.

Abstract: A detector element is disclosed with a semi-conductive converter element and metal contacts arranged thereon for at least one anode and at least one cathode, wherein at least one of the metal contacts comprises a contact layer made from a contact material based on precious metal and ruthenium as its mixed component. Moreover, an embodiment of the invention concerns a radiation detector with the detector element with a ruthenium-containing contact layer and, optionally, with an evaluation unit to read out a detector signal, as well as a medical device with the radiation detector. Furthermore, a method for the production of a detector element is described which includes the installation step of a contact material of at least one of the metal contacts on the converter element, wherein the contact material includes a precious metal base with ruthenium as its mixed component.

Abstract: A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor.

Abstract: Method for identifying CVD diamond comprises (1) placing a clean diamond on a fixed platform; (2) illuminating the diamond with light having various wavelengths; (3) receiving reflected light from the diamond; (4) calculating a reflectance value at each wavelength based on a light intensity at each wavelength of the reflected light, generating a spectral reflectance curve; (5) determining whether the spectral reflectance curve has a sharp trough, then storing the diamond if the spectral reflectance curve thereof does not have the sharp trough, while selecting the diamond for a further identification if the spectral reflectance curve thereof has the sharp trough; and (6) determining whether the sharp trough of the diamond selected from the step (5) is at a wavelength between 227 nm and 233 nm, and identifying the diamond to be the CVD diamond if the sharp trough is at the wavelength between 227 nm and 233 nm.

Abstract: A detector for a small-angle x-ray diffraction system uses curved readout strips shaped to correspond to the expected intensity distribution of x-rays scattered by the system. This expected intensity distribution may be a series of concentric circles, and each of the strips has a shape that approximates a section of an annulus. The strips may be positioned on a substrate such that a center of curvature of the curved strips is located along an edge of a readout region within which the strips are located or, alternatively, at a geometric center of the readout region. The detector may have a signal readout system that uses a delay line or, alternatively, a multichannel readout system. The detector may make use of electron generation via interaction of the diffracted x-ray beam with a gas in a gas chamber, or through interaction of the diffracted beam with a semiconductor material.

Abstract: A radioactive ray detector card comprises semiconductor elements on a substrate, each having a plurality of first electrodes, provided on one of main surfaces thereof, and a second electrode, provided on other of main surfaces thereof; the substrate having first electrode wirings electrically connected with the plurality of first electrodes, and card edge portions, which transmit signals from the plurality of semiconductor elements to an external electric circuit; the second electrode corresponding to a second electrode identifier, for identifying the semiconductor elements; the first electrodes corresponding to first electrode identifiers, for identifying the plurality of first electrodes, respectively; and the first electrode wirings electrically connect between the first electrodes, corresponding to one of the first electrode identifiers on one semiconductor element of the plurality of semiconductor elements, and the first electrodes, corresponding to one of the same first electrode identifiers on the othe

Abstract: The invention relates to a radiation detector (100) comprising a converter element (102) for converting incident high-energy radiation (X) into charge signals. A cathode (101) and an array (104) of anodes (103) are disposed on different sides of the converter element (102) for generating an electrical field (E0, Ed) within it. The strength of said electrical field (E0, Ed) is increased in a first region (Rd) near the anode array (104) with respect to a second region (R0) remote from it. Such an increase may be achieved by doping the first region (Rd) with an electron acceptor. The increased field strength in the first region (Rd) favorably affects the sharpness of charge pulses generated by incident radiation.

Abstract: The invention concerns a method of real-time mapping of a presence distribution of a source of photons in a site, the method comprising the steps consisting of measuring (100), at a plurality of measurement points, a photon flux in an energy band-width determined with a spectrometric detector, and noting the geographical co-ordinates of said point, and, at each measurement point, —from a response function of the detector, and information on the site, establishing a distribution of origins (200) of the photons around the measurement point, —from the distributions, representing (300), on a map of the site, a distribution of origin of photons, the method further comprising, for each measurement point starting from the second, a step (250) prior to the representing step (300), during which the distributions of origins of the photons around the current measurement point are correlated with those of previous measurement points.

Abstract: A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.

Abstract: Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps. The method also includes growing a passivation oxide layer on a top of the polished first surface and depositing patterned metal contacts on a top of the passivation oxide layer. The method further includes applying a protecting layer on the patterned deposited metal contacts, etching a second surface of the semiconductor and applying a monolithic cathode electrode on the etched second surface of the semiconductor. The method additionally includes removing the protecting layer from the patterned metal contacts on the first surface, wherein the patterned metal contacts are formed from one of (i) reactive metals and (ii) stiff-rigid metals for producing inter-band energy-levels in the passivation oxide layer.

Abstract: A detector (550) for detecting light (248B) from a light source (248A) comprises a single array of pixels (574) and a first mask (576). The single array of pixels (574) includes a plurality of rows of pixels (574R), and a plurality of columns of pixels (574C) having at least a first active column of pixels (574AC) and a spaced apart second active column of pixels (574AC). The first mask (576) covers one of the plurality of columns of pixels (574C) to provide a first masked column of pixels (574MC) that is positioned between the first active column of pixels (574AC) and the second active column of pixels (574AC). Additionally, a charge is generated from the light (248B) impinging on the first active column of pixels (574AC), is transferred to the first masked column of pixels (574MC), and subsequently is transferred to the second active column of pixels (574AC).

Abstract: There are provided a gamma ray detecting apparatus, including: a secondary electron emitter causing a Compton scattering reaction with an incident gamma ray to emit secondary electrons in a progress direction of the gamma ray; a first radiation detector provided to be opposed to the secondary electron emitter with respect to an emission progress direction of the secondary electrons and detecting the position and transfer energy of the secondary electron; a second radiation detector provided to be opposed to the first radiation detector with respect to the emission progress direction of the secondary electron and detecting the position and the transfer energy of the secondary electron passing through the first radiation detector; a third radiation detector provided to be opposed to the second radiation detector with respect to the emission progress direction of the secondary electron and detecting residual energy of the secondary electron by absorbing the secondary electron passing through the second radiation

Abstract: A method for a constructing radiation detector includes fabricating a multi-layer structure upon a wafer, the multi-layer structure comprising a plurality of metal layers, a plurality of sacrificial layers, and a plurality of insulating layers, forming a cavity within the multi-layer structure, filling the cavity with a gas that ionizes in response to nuclear radiation, and sealing the gas within the cavity.

Abstract: Embodiments of methods/apparatus can transition a DR detector imaging array to low power photosensor mode where a first voltage is applied across the photosensors. Embodiments of methods/apparatus can provide an area radiographic imaging array including a plurality of pixels arranged in a matrix at the imaging array where each pixel can include at least one electrically chargeable photosensor and at least one transistor, row address circuits, signal sensing circuits, and photosensor power control circuitry to maintain a first voltage across photosensors of the portion of the imaging array when the detector is between imaging operations. In one embodiment, photosensor power control circuitry can maintain the first voltage across the photosensors when a power consumption of the signal sensing circuits is less than 1% of the power consumption of the signal sensing circuits during readout of a signal from the portion of the imaging array.

Abstract: A cassette includes: an image capturing unit including: an image receiving unit having a flat panel shape on which a plurality of pixels are arranged on a substrate converting radiation into electric charges and accumulating the converted electric charges; and a support to which the image receiving unit is attached; and a case in which the image capturing unit is accommodated in an unfixed state, in which the support supports the image receiving unit, and an outer edge of the support is disposed on an outer side of an outer edge of the substrate of the image receiving unit in a direction parallel to an image receiving surface of the image receiving unit.

Abstract: A radiographic apparatus includes an X-ray detection sensor having a two-dimensional detector plane for detecting an intensity distribution of X-rays, a body internally containing the X-ray detection sensor, a supporting member having a supporting surface for supporting the X-ray detection sensor across the detector plane and which fixes the X-ray detection sensor to an inner bottom surface of the body, and a circuit board on which is mounted a circuit for reading out a detection signal from the X-ray detection sensor. Furthermore, in the radiographic apparatus, the supporting member forms a space between the supporting member and the inner bottom surface of the body in a peripheral portion of the supporting member. At least a part of the circuit board is arranged in the space.

Abstract: Bias lines are provided for respective columns of pixels, and of a plurality of bias lines, bias lines provided at an interval of 10 mm are connected to a bias power source through a current detector. The remaining bias lines are connected directly to the bias power source without passing through the current detector. In each pixel, if electric charge is generated by a radiation detection element in accordance with the dose of irradiated radiation, a current flows in the bias line in accordance with the generated electric charge. The current detector detects the current flowing in the bias line, and a control unit detects, as the timing of starting irradiation of a radiation, when the detected current (current value) is equal to or greater than a threshold value, and starts radiographing of a radiological image.

Abstract: An electronic read circuit for a radiation detector comprises: a comparator receiving a threshold potential and the potential from an integration node, said node being able to store electrical charges that are generated by a photosensitive element; a counter connected to the output of the comparator; and a counter-charge injection circuit comprising: a capacitor that stores counter-charges, a transfer transistor that can be turned on in order to transfer counter-charges from a terminal of the capacitor to the integration node whenever the comparator toggles, the transfer of the counter-charges bringing about a variation of potential at said terminal of the capacitor, and a regulation circuit for controlling the transfer transistor, said circuit comprising means for turning on the transfer transistor when the potential of the terminal of the capacitor is between two predetermined potentials that are independent of the transfer transistor.

Abstract: A detector array (110) includes a detector (112) configured to detect ionizing radiation and output a signal indicative of the detected radiation, wherein the detector at least includes a semiconductor element (118) and an illumination subsystem (120) configured to generate and transfer sub-band-gap illuminating radiation to selectively illuminate only a sub-portion of the semiconductor element in order to produce a spatially patterned illumination distribution inside the element.

Abstract: Provided is a radiation detecting element, including: a semiconductor layer including a tin oxide crystal; and a detecting unit configured to detect, as an electrical signal, charges generated in the semiconductor layer when the semiconductor layer is irradiated with radiation, in which a resistivity of the semiconductor layer is 107 ?·cm or more.

Abstract: Prepared is an n? type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p+ type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p+ type semiconductor region 3 in the second principal surface 1b of the n? type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n? type semiconductor substrate 1 is formed on the second principal surface 1b side of the n type semiconductor substrate 1. After formation of the accumulation layer 11, the n? type semiconductor substrate 1 is subjected to a thermal treatment.

Abstract: The present invention relates to an X-ray parameter measuring arrangement comprising a detector for measuring said parameter configured to be positioned in a position adjacent to an x-ray source arranged to generate a ray formation having a primary ray portion for radiating an object. The position is chosen in such a way that the interference with a reproduced image is reduced or eliminated.

Abstract: A pixel array and an image sensor including the pixel array having improved sensitivity and can drive pixels with high resolution, according to embodiments. In embodiments, a pixel array may include a plurality of pixels having a pixel area and a logic area. The pixel array may include at least one of: (1) A photoelectric conversion unit in the pixel area of each of the pixels. (2) A pixel-area transistor disposed at a side of the photoelectric conversion unit in the pixel area. (3) A metal-0 layer on the pixel-area transistor. (4) A metal-1 layer on and/or over the metal-0 layer. (5) A light reception unit on and/or over the metal-1 layer, with the metal-1 layer being the top metal layer in the pixel area.

Abstract: Embodiments of radiographic imaging systems and/or methods can operate a digital radiography detector in a multiple modes, where characteristics such as an exposure integration time and dark images (e.g., number timing integration time, etc.) for first and second modes are different. The digital radiography detector can be coupled to a memory that can store a first set of one or more calibration maps for the first mode and a second set of one or more calibration maps for the second mode and a processor. In one embodiment, the processor can form a first calibration-corrected exposure image by modifying a first exposure image from the first mode using the first set of calibration maps and a second calibration-corrected exposure image by modifying a second exposure image from the second mode using the second set of calibration maps in combination with calibration maps for the first mode.

Abstract: The present invention relates to a pixel detector (10), comprising a semiconductor sensor layer (12), in which charges can be generated upon interaction with particles to be detected. The semiconductor layer defines an X-Y-plane and has a thickness extending in Z-direction. The detector further comprises a read-out electronics layer (14) connected to said semiconductor layer (12), said read-out electronics layer (14) comprising an array of read-out circuits (20) for detecting signals indicative of charges generated in a corresponding volume of said semiconductor sensor layer (12). The neighbouring read-out circuits (20) are connected by a relative timing circuit configured to determine time difference information between signals detected at said neighbouring read-out circuits (20).

Abstract: The present invention relates to radiation detector (2) comprising a radiation sensitive semiconductor element (10) generating electron-hole pairs in response to an irradiation with radiation (3), an anode electrode(20) arranged on a first surface (11) of the semiconductor element (10) facing away from the radiation, said anode electrode (20) being segmented into anode segments (21) representing anode pixels, wherein anode gaps (22) are arranged between said anode segments (21), a cathode electrode (30) arranged on a second surface (12) of the semiconductor element (10) opposite the first surface (11) and facing the radiation (3), said cathode electrode (30) being segmented into first and second cathode segments (31, 32), wherein said first cathode segments (31) are substantially arranged opposite said anode segments (21) and said second cathode segments (32) are substantially arranged opposite said anode gaps (22), and a cathode terminal (41, 42) providing electrical connections to said first cathode segment

Abstract: The present invention provides, at low cost, a multilayer radiation detector whose position relative to a beam axis can be verified. The radiation detector includes a plurality of sensors that react to radiation and are stacked in parallel inlayers in a traveling direction of the radiation. The sensors are each sectioned into a central region including the center of the sensor and another region surrounding the central region. The radiation detector independently measures signals measured by the central regions and signals measured by the other regions. Thus, the position of the radiation detector can be verified.

Abstract: One feature pertains to a radiation dosimeter comprising a microdosimeter cell array that includes a first microdosimeter cell having a first semiconductor volume configured to generate a first current in response to incident radiation. The first semiconductor volume may have at least one of a first size, a first shape, a first semiconductor type, and/or a first semiconductor doping type and concentration that is associated with a first biological cell type or a first biological cell component type. The dosimeter may further comprise a processing circuit communicatively coupled to the microdosimeter cell array and configured to generate a signal based on the first current. The signal generated may be indicative of an amount of radiation absorbed by the microdosimeter cell array. A display may be utilized by the dosimeter to show a radiation level reading based on the signal generated.

Abstract: An electrical contact for a detector, the electrical component, comprising a cadmium tellurium component, a first layer formed onto the cadmium tellurium component, wherein the first layer comprises indium and a contact agent being bonded directly or indirectly to the first layer to be in electrical contact with the first layer. The contact agent may be a stud bump or a conductive adhesive interconnect being bonded indirectly to the first layer via noble metal shielding layer.

Abstract: A direct ion storage (DIS) radiation detector or dosimeter has a design that is easy and low cost to manufacture using semiconductor processing techniques. The detectors include internal communications interfaces so they are easy to read. Different interfaces, including wired, e.g. USB ports, and wireless interfaces, may be used, so that the dosimeters may be read over the internet. The detectors can thus be deployed or used in a variety of detection systems and screening methods, including periodic or single time screening of people, objects, or containers at a location by means of affixed dosimeters; screening of objects, containers or people at a series of locations by means of affixed dosimeters, and surveillance of an area by monitoring moving dosimeters affixed to people or vehicles.

Abstract: A device comprising: a substrate, a sensor package mounted on the substrate, and one or more filters, wherein the sensor package comprises one or more radiation sensors mounted therein, wherein each of the one or more filters is used to attenuate one or more types of radiation that enter an exposed side of each of the one or more radiation sensors at angle of up to +/?60 degrees with respect to a respective axial line through respective centers of each of the one or more radiation sensors.

Abstract: A detector for a small-angle x-ray diffraction system uses curved readout strips shaped to correspond to the expected intensity distribution of x-rays scattered by the system. This expected intensity distribution may be a series of concentric circles, and each of the strips has a shape that approximates a section of an annulus. The strips may be positioned on a substrate such that a center of curvature of the curved strips is located along an edge of a readout region within which the strips are located or, alternatively, at a geometric center of the readout region. The detector may have a signal readout system that uses a delay line or, alternatively, a multichannel readout system. The detector may make use of electron generation via interaction of the diffracted x-ray beam with a gas in a gas chamber, or through interaction of the diffracted beam with a semiconductor material.

Abstract: An electronic device to simply and efficiently measure energy of incident photons in a very short time and with a very high count rate and high precision, starting from current pulses from an ionizing electromagnetic radiation detector, the electronic device including an analog delay line with switched capacitors with controlled loss at an output from a charge preamplifier.

Abstract: The invention utilizes the changes in physical properties of materials during a solid-solid phase transition in order to actuate microactuators. The substantial changes in properties during insulator-to-metal transitions (IMTs) of some materials are useful for controlling purposes. Methods of using the microactuators are also explained.

Abstract: Detector for detection of particle radiation, particularly particle radiation having an energy in the range of 150 eV to 300 keV, comprising at least one detector element, said detector element comprising a semiconductor detector material, at least a set of line-shaped electrodes conductively connected to at least one surface of said semiconductor detector material, each set comprising a plurality of line-shaped electrodes extending in parallel, and signal processor communicating with said line-shaped electrodes, wherein, in each set, said line-shaped electrodes are distributed with a strip pitch of less than 3 ?m, and that the thickness of said semiconductor detector material is of less than two times the strip pitch of said line-shaped electrodes.

Abstract: Inorganic semiconducting materials such as silicon are used as a host matrix in which quantum dots reside to provide a radiation detector or energy converter. The quantum dot material may be disposed by incorporating materials sensitive to neutron detection such as boron-containing compounds, or the use of methods such as chemical vapor deposition or atomic layer deposition to insert the quantum dot material. Electrodes may be extended deep into the host matrix material to improve efficiency. Likewise, the host matrix may be machined to create pores in the matrix material. Further, amplification and signal-processing structures may be used in close proximity to the radiation-sensitive region of the device.

Abstract: In the radiation detector, a capacitor is connected between a connecting wire which is connected with a preamplifier (amplifier) and another connecting wire. Specifically, the capacitor is connected between the connecting wire and another connecting wire which has the lowest electric resistance with respect to a signal wire among connecting wires connected with a radiation detecting element. This prevents electric current produced by static electricity from flowing to the signal wire and prevents the signal wire or the preamplifier from being damaged by static electricity. A circuit element for a countermeasure against static electricity is not provided at the signal wire, and therefore input capacitance of the preamplifier is kept low. Accordingly, the radiation detector is improved by a sufficient countermeasure against static electricity while input capacitance of the preamplifier is kept low.

Abstract: A High-resolution Image Acquisition and Processing Instrument (HIAPI) performs at least five simultaneous measurements in a noninvasive fashion, namely: (a) determining the volume of a liquid sample in welh (or microtubes) containing liquid sample, (b) detection of precipitate, objects of artifacts within microliter plate wells, (c) classification of colored samples in microliter plate wells or microtubes; (dl determination of contaminant (e.g. wafer concentration}; (e) air bubbles; (f) problems with the actual plate. Remediation of contaminant is also possible.

Abstract: A radiation detector that can be used to detect the intensity of radiation fields and provide feedback to the user about the location of radiation fields. The radiation detector has a number of radiation detection volumes that are arranged in a staggered pattern relative to a sweeping direction of the radiation detector. The staggered arrangement of the detection volumes allows a large gap-free detection volume that is composed of smaller detection volumes in order to provide adequate sensitivity.

Abstract: An assembly (13) for monitoring ionising radiation comprises a detector substrate (2) for generating electronic charge responsive to incident ionising radiation, the detector substrate (2) having an array of ionising radiation sense volumes (12) formed in it. A circuit substrate (14) supporting an array of read-out circuits (16) corresponding to the array of sense volumes is mechanically and electrically coupled to the detector substrate (14). Each of the read-out circuits (16) is switchable between first and second charge integration modes for receiving charge from a corresponding sense volume. A charge integration circuit (30) is configured in the first charge integration mode to integrate charge corresponding to sensing of a single ionising radiation detection event in a corresponding sense volume and in the second charge integrating mode to integrate charge corresponding to sensing a plurality of ionising radiation detection events in the corresponding sense volume.

Abstract: A neutron logging tool includes a neutron source and at least one position sensitive thermal or epithermal neutron detector. The logging tool further includes an electronic controller configured to estimate the axial location of detected neutrons. Measurement of the axial neutron flux distribution enables other formation and borehole parameters such as formation porosity and sensor standoff to be computed. In logging while drilling embodiments, a borehole caliper may also be computed form the axial neutron flux distribution.

Abstract: Embodiments of methods and apparatus are disclosed for obtaining an imaging array or a digital radiographic system including a plurality of pixels where at least one pixel can include a scan line, a bias line, a switching element including a first terminal, a second terminal, and a control electrode where the control electrode is electrically coupled to the scan line; and a photoelectric conversion element including a first terminal electrically coupled to the bias line and a second terminal electrically coupled to the first terminal of the switching element, and a signal storage element formed in the same layers as the scan line, bias line, the data line, the switching element and the photoelectric conversion element. An area of one terminal of the signal storage element can be larger than a surface area of the pixel.

Abstract: A two-dimensional array of memory cells may be used to implement a spatial dosimeter. The two-dimensional array of cells may be implemented by an integrated circuit memory. Because of the relatively small size of the integrated circuit memory, the resolution of the resulting array may be less than 100 nanometers. The change in threshold voltage of each of the cells, as a result of radiation exposure, may be used to calculate the dose seen at each cell, allowing dose profiles in two dimensions with sub-micrometer resolution.

Abstract: A semiconductor 2D position detector for two-dimensionally detecting positions of radiation is a Schottky diode comprising: a semiconductor substrate 2; a first to an nth (n is an integer of 2 or higher) stripe electrodes 3 arranged on the surface 2A of the semiconductor substrate 2 at given intervals in the X direction and in parallel to the Y direction; and an electrode 15 formed on the rear surface 2B of the semiconductor substrate 2. The top and the bottom ends of each of the stripe electrodes 3 are sequentially connected via a resistor 4, 5, and signals V1 to V4 output from the radiation 16 applied to the semiconductor substrate 2 are obtained from each of the both ends of the first and the nth stripe electrodes placed far left and right.

Abstract: The present invention relates to a composition having a first response to a first electromagnetic radiation and, after intermediate exposure to a second electromagnetic radiation, a second response to the first electromagnetic radiation, different from the first response. In one aspect, the composition exhibits a regenerated first response to the first electromagnetic radiation after exposure to a third electromagnetic radiation.

Abstract: A detection apparatus comprising a substrate; a switching element arranged over the substrate and including a plurality of electrodes; a conductive line arranged over the substrate and electrically connected to a first electrode of the plurality of electrodes of the switching element; and a conversion element including a semiconductor layer arranged over the switching element and the conductive line and arranged between two electrodes, one electrode of the two electrodes being electrically connected to a second electrode of the plurality of electrodes of the switching element, is provided. The one electrode of the conversion element is arranged over the switching element and the conductive line through a space formed between the one electrode and the first electrode of the switching element or between the one electrode and the conductive line.

Abstract: The application describes an X-ray detector for use in a medical equipment, wherein the detector comprises an unit for transforming X-ray radiation into electrical charge, a first capacitor for being charged by an electrical charge, wherein the first capacitor is electrically connected to the unit for transforming, a second capacitor for being charged by an electrical charge, and a first gain switching gate, wherein the second capacitor is electrically connected with the unit for transforming if the first gain switching gate is in on-state, wherein the detector is adapted to switch on the first gain switching gate for short periods. Further the application describes an X-ray system comprising a detector according to the invention, wherein the system is adapted for gain selection, wherein the detector is adapted to switch on the first gain switching gate for short periods.