Abstract: The invention relates to a radiation detector and a method for its production, wherein a series of converter plates (110) and interconnect layers (120), which extend into a border volume (BV) lateral of the converter plates (110), are stacked. By filling voids in the border volume (BV) with an underfill material and cutting through the border volume, a contact surface (CS) is generated in which electrical leads (123) of the interconnect layers (120) lie free. To allow a good contacting, said leads (123) are preferably provided with enlargements in the contact surface, for example by bonding wires (132) to them.

Abstract: A radiation detector is disclosed. The detector has an entrance opening etched through a low-resistivity volume of silicon, a sensitive volume of high-resistivity silicon for converting the radiation particles into detectable charges, and a passivation layer between the low and high-resistivity silicon layers. The detector also has electrodes built in the form of vertical channels for collecting the charges generated in the sensitive volume, and read-out electronics for generating signals based on the collected charges.

Abstract: A detector and a method for the detection of ionising radiation are proposed. The detector (1) exhibits a detector body (2) made from a semiconductor material in which incident ionising radiation generates free electron-hole pairs, a cathode side (4) of the detector body (2) to which the free holes generated drift in an electric field, an anode side (3) of the detector body (2) to which the free electrons generated drift in an electric field, at least two electrodes (5, 6) on the anode side (3) and at least two electrodes (7, 8) on the cathode side (4). There is a potential difference between the electrodes (5, 6, 7, 8). The potential difference between the individual electrodes (7, 8) on the cathode side (4) is smaller than the potential difference between each of the electrodes (5, 6) on the anode side (3) on the one hand and each of the electrodes (7, 8) on the cathode side (4) on the other hand.

Abstract: A detector with a Silicon Diode and an amplifier, and a feedback element in the form of, for example, a resistor or a diode, switchably connected to the output of the amplifier. When the feedback element is selected via a switch, the detector operates in a Current Measurement Mode for determining electron current, and when the element is not selected the detector operates in its well-known Pulse Height Measurement Mode for determining the energy of X-ray quanta.

Abstract: A method is provided for detecting x-ray quanta incident on a multi-pixel x-ray detector having a two-dimensional matrix composed of measurement-signal-generating pixels, wherein the multi-pixel x-ray detector is embodied as a direct solid-state detector, wherein the pixels, which generate a measurement signal within a predefined time interval and which in addition lie in a contiguous cluster composed of a plurality of pixels, are assigned to an event cluster by an evaluation unit and wherein their measurement signals are drawn upon for the purpose of approximating the position at which the x-ray quantum interacted with the multi-pixel x-ray detector.

Abstract: A light sensor includes a control electrode formed on a substrate and having two edges, and a semiconductor film formed opposite the control electrode with an insulating film interposed therebetween, and including a photoactive layer and electrode regions located in a pair on opposite sides of the photoactive layer. The photoactive layer is arranged in an area that overlaps the control electrode. At least one of the paired electrode regions overlaps proximal one of the edges of the control electrode, and on and along the proximal edge, the at least one electrode region has a length shorter than that of the photoactive layer in a direction along the proximal edge of the control electrode.

Abstract: The present invention relates to a detector for measuring characteristics of an energetic particle beam generated by a radiation source, the detector including means to vary the incoming particle beam energy; a plurality of sensors arranged in parallel; and processing means capable of processing signals coming from said sensors in correlation with said energy variation.

Abstract: A mechanical device for supporting and attaching at least one ionizing radiation detection probe. For each detection probe it includes one probe-holder ending in a collimator-holder able to support a collimator intended to delimit a field of observation of the detection probe, and an attachment device intended to be attached to a glove port of a glove box, where the probe-holder, or each probe-holder, cooperates with the said attachment device.

Abstract: The method and the device are used to monitor the intensity of an electron beam. In order to detect changes in intensity of the electron beam, electromagnetic radiation directly or indirectly emitted by the electron beam is detected and evaluated. This particularly refers to the evaluation of ultraviolet radiation and/or radiation in the range of visible light.

Abstract: An electronic device may have a display with a brightness that is adjusted based on ambient light data from multiple ambient light sensors. Sensors that are shadowed can be ignored. A touch sensor array in the display may have electrodes that overlap ambient light sensors. When a touch sensor signal indicates that an external object is covering one of the ambient light sensors, data from that ambient light sensor can be discarded. The ambient light sensors may include a primary ambient light sensor such as a human-eye-response ambient light sensor and may include an array of secondary ambient light sensors such as non-human-eye-response sensors. The secondary ambient light sensors may be formed on a display layer such as a thin-film-transistor layer and may be formed from thin-film materials. An algorithm may be used to dynamically calibrate non-human-eye-response ambient light sensors to the human-eye-response ambient light sensor.

Abstract: A control device that controls a sensor capable of changing a magnitude of an accumulation capacitance of an electric charge for each pixel includes an acquisition unit configured to acquire an output value according to an accumulated electric charge of each pixel of the sensor, a determination unit configured to determine whether the accumulation capacitance of each pixel is saturated based on the output value, and a setting unit configured to set magnitude of the accumulation capacitance for each pixel according to the determined accumulation capacitance.

Abstract: Disclosed is a non-planar energy transducer, including a substrate and a switching device disposed thereon. An elastomer having a periodic structure is disposed on the switching device. A bottom electrode is conformally disposed on the elastomer to electrically connect to the switching device. An energy conversion layer is conformally disposed on the bottom electrode, and a top electrode is conformally disposed on the energy conversion layer, wherein the top electrode connects to a positive voltage or a negative voltage.

Abstract: An apparatus includes a plurality of photosensors. Photon trigger signals produced in response to signals from the sensors are received by a trigger line network that includes segment, intermediate), and master lines. The trigger network is configured to reduce a temporal skew introduced by the trigger line network. Validation logic provides a trigger validation output signal.

Abstract: The invention relates to a charged particle detector system comprising a conversion plate (110) to convert incoming radiation to secondary electrons. These secondary electrons are then detected by a secondary electron detector (120), thereby providing information of the incoming radiation. Often this information is limited to, in first approximation, the flux of incoming radiation. In the case of, for example, backscattered electrons this is the current of the incoming backscattered electrons. The invention proposes to form the conversion plate as, for example, an energy dependent detector, for example a photodiode to detect electrons, so that the detector system simultaneously provides information of, for example, current (S1) and mean energy (S2) of the incoming radiation. The detector system is especially suited for use in a SEM or a DualBeam apparatus.

Abstract: The present disclosure provides a semiconductor manufacturing method. The method includes performing a first process to a first plurality of semiconductor wafers; determining a sampling rate to the first plurality of semiconductor wafers based on process quality; determining sampling fields and sampling points to the first plurality of semiconductor wafers; measuring a subset of the first plurality of semiconductor wafers according to the sampling rate, the sampling fields and the sampling points; modifying a second process according to the measuring; and applying the second process to a second plurality of semiconductor wafers.

Abstract: The present invention provides a radiation measurement device, which shortens periodic interruption periods in the radiation measurements and prevents damage to the amplifier, and a nuclear medicine diagnosis system using such measurement device. The radiation measurement device comprises a semiconductor radiation detector detecting a radiation, a capacitor, which applies voltage to the semiconductor radiation detector, one or more direct current power supplies each capable of making either of positive and negative electric charge collect on one of the electrodes of the capacitor, a constant-current device, which conducts an electric current from the direct current power supplies to the one of the electrodes of the capacitor, and two or more switching devices installed in the wiring connecting the direct current power supplies and the one of the electrodes of the capacitor. Further disclosed is a nuclear medicine diagnosis system equipped with such radiation measurement device.

Abstract: The current invention applies to photon counting silicon x-ray detectors with energy discriminating capabilities and applications in x-ray imaging systems. The overall image quality produced by such a system is improved by the presented novel methods for optimally using the energy information in Compton events and making selective use of counts induced from charges collected in neighboring pixels. The pile-up problem during high-flux imaging regimes is reduced by a novel method for signal reset, which improves the count efficiency by reducing the risk of losing event due to signal pile-up in the read out electronics chain.

Abstract: A radiation detector is disclosed. The radiation detector comprises an active detector surface configured to generate charge carriers in response to charged particles associated with incident radiation. The active detector surface is further configured with a sufficient thickness for a partial energy deposition of the charged particles to occur and permit the charged particles to pass through the active detector surface. The radiation detector further comprises a plurality of voltage leads coupled to the active detector surface. The plurality of voltage leads is configured to couple to a voltage source to generate a voltage drop across the active detector surface and to separate the charge carriers into a plurality of electrons and holes for detection. The active detector surface may comprise one or more graphene layers. Timing data between active detector surfaces may be used to determine energy of the incident radiation. Other apparatuses and methods are disclosed herein.

Abstract: A counting detector is disclosed. In at least one embodiment, the counting detector includes sensors for converting radiation quanta into electrical pulses and an evaluation unit with a number of energy thresholds, wherein the evaluation unit generates for each sensor a count value for each energy threshold from the pulses, which count value represents the number of radiation quanta with an energy above the respective energy threshold. In at least one embodiment, one of the energy thresholds is arranged directly above a characteristic energy of radiation quanta causing double counting in order to correct double counting; and a correction unit calculates a corrected count value from the count values of the energy thresholds, which corrected count value has reduced double counting for at least one of the energy thresholds. Images with an improved contrast-to-noise ratio and, at the same time, a reduced X-ray dose can be generated on the basis of the at least one corrected count value.

Abstract: To mitigate the influence of charge sharing occurring in semiconductor detectors, an improved semiconductor detector (200) is provided, which comprises: a plurality of anodes (210) arranged to form at least one opening (230), each opening being formed by two anodes in the plurality of anodes; at least one cathode (220); a detector cell (240) located between the plurality of anodes and the at least one cathode; wherein the detector cell comprises at least one groove (250), each of the at least one groove having a first opening (252) aligned with one of the at least one opening being formed by two anodes in the plurality of anodes, each of the at least one groove extending towards the at least one cathode. By forming grooves in the detector cell, the charge cloud generated by a single photon can be received by a corresponding anode instead of several neighboring anodes, which thereby improves the spectral resolution and count rate of a semiconductor detector.

Abstract: A detection apparatus configured to detect soft X-ray radiation, includes a conversion unit and a circuit unit disposed on a semiconductor substrate. The conversion unit has a plurality of conversion elements that convert the soft X-ray radiation incident on the semiconductor substrate into electric charge. The circuit unit has an amplifier transistor that amplifies and outputs a signal supplied from the conversion unit. A shielding unit is disposed above the circuit unit. The shielding unit blocks the soft X-ray radiation incident on the circuit unit. Preferably, the soft X-ray shielding coefficient of a material that forms the shielding unit is higher than the soft X-ray shielding coefficient of each of aluminum and copper. Alternatively, a material that forms the shielding unit has an atomic number higher than or equal to 70.

Abstract: A particle beam system comprises a particle beam source 5 for generating a primary particle beam 13, an objective lens 19 for focusing the primary particle beam 13 in an object plane 23; a particle detector 17; and an X-ray detector 47 arranged between the objective lens and the object plane. The X-ray detector comprises plural semiconductor detectors, each having a detection surface 51 oriented towards the object plane. A membrane is disposed between the object plane and the detection surface of the semiconductor detector, wherein different semiconductor detectors have different membranes located in front, the different membranes differing with respect to a secondary electron transmittance.

Abstract: A radiation detection apparatus comprises a plurality of pixels each including a conversion element which converts incident radiation into a charge, a switching element which transfers the charge, and an interlayer insulation film disposed between the conversion element and the switching element, a gate line to drive the switching element, and a signal line located to intersect with the gate line and configured to read out the charge transferred from the switching element, wherein Ca??0×?×S/d and 7d?P/2 is satisfied, where P is a pixel pitch, Ca is a sum total of coupling capacitances between the signal line and the gate line, S is an overlapping area of the signal line and the conversion element, d is a thickness of the interlayer insulation film, ? is a relative dielectric constant of the interlayer insulation film, and ?0 is a vacuum dielectric constant.

Abstract: A particle beam system comprises a particle beam source 5 for generating a primary particle beam 13, an objective lens 19 for focusing the primary particle beam 13 in an object plane 23; a particle detector 17; and an X-ray detector 47 arranged between the objective lens and the object plane. The X-ray detector comprises plural semiconductor detectors, each having a detection surface 51 oriented towards the object plane. A membrane is disposed between the object plane and the detection surface of the semiconductor detector, wherein different semiconductor detectors have different membranes located in front, the different membranes differing with respect to a secondary electron transmittance.

Abstract: The present invention relates to an X-ray detector having an X-ray sensor (first X-ray sensor) converting X-radiation directly into electric charge carriers, having signal evaluation electronics electrically connected to the X-ray sensor and preferably formed as integrated circuit(s), having an X-ray absorber formed for protecting the signal evaluation electronics, and having a sensor carrier (first sensor carrier) formed and arranged for positioning the X-ray sensor relative to the X-ray absorber, wherein, viewed in the direction of incidence of the X-radiation, both the signal evaluation electronics are arranged behind the X-ray absorber and in the X-radiation shadow thereof and the X-ray sensor is admittedly likewise positioned by means of the sensor carrier preferably arranged between the X-ray absorber and the signal evaluation electronics at least sectionally behind the X-ray absorber, but outside the X-radiation shadow thereof.

Abstract: A method for forming a semiconductor device includes forming an implant mask on a substrate, such that a first portion of the substrate is located under the implant mask, and a second portion of the substrate is exposed; performing oxygen ion implantation of the substrate; removing the implant mask; and forming a first field effect transistor (FET) on the first portion of the substrate, and forming a second FET on the second portion of the substrate, wherein the second FET has a higher radiation sensitivity than the first FET.

Abstract: A radiation detector includes a semiconductor element capable of detecting a radiation, a substrate on which the semiconductor element is mounted, and a support member disposed adjacent to the semiconductor element for supporting the substrate. The substrate includes a first end portion on which the semiconductor element is mounted, and a second end portion opposite the first end portion for disposing the support member. The support member includes a first support and a second support, and the first support and the second support each includes a protrusion and an engagement hole for engaging with the protrusion. The protrusion of the first support engages with the engagement hole of the second support to fix the first support and the second support such that the substrate is compressed and supported by the first support and the second support.

Abstract: Provided between a bias power supply and a radiation detector are a noise filter and a bias voltage transmitting circuit. In a state where the bias voltage is applied, the noise filter circuit operates. In a state where the bias voltage is switched on and off, the bias voltage transmitting circuit and the noise filter circuit operate. In a state where the bias voltage is switched on and off, the bias voltage transmitting circuit operates.

Abstract: A radiation detection apparatus and a radiation image capturing system according to the present invention includes an electronic cassette equipped with a casing, and a radiation detection device accommodated inside the casing, which detects radiation emitted from a radiation source and having passed through a subject, while converting the radiation into radiation image information. The electronic cassette includes a sensor for sensing that the casing has been lifted, a power supply controller for supplying power based on a detection signal from the sensor, a discriminating unit for discriminating whether the radiation detection apparatus has transitioned to an image capturing capable mode, and a warning signal output unit for outputting a warning signal, for issuing a warning when the radiation detection apparatus cannot transition to the image capturing capable mode.

Abstract: The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.

Abstract: Systems, devices, processes, and algorithms for adaptively filtering a signal output from a radiation detector and adaptively sampling the signal. A count rate of events detected by the radiation detector is estimated by a processing unit. An RC time constant of the filter and a sampling rate of an analog-to-digital converter are adjusted based on the estimated count rate. Events are continuously detected by the radiation detector and counted by the processing unit while the adjustable parameters (the RC time constant and the sampling rate) of the filter and the analog-to-digital converter are adjusted on the fly (in real time) to optimize an energy resolution of the detected events, while reducing degradation due to pile-up effects and improving efficiency of the analog-to-digital converter. The filter can be implemented through analog filters, digital filters, or a combination thereof.

Abstract: A configurable flat panel multi resolution X-ray detector is disclosed herewith. The detector comprises: a detector array having a plurality of rows and columns of detector elements; scan electronics designed to activate the detector array for reading data from the detector array and readout electronics associated with the scan electronics to read the data from the detector elements. At least one of the detector array, scan electronics and readout electronics is configured to achieve multi resolution.

Abstract: In a radiation measurement apparatus, an analog pulse signal output from a semiconductor radiation detector is converted to a plurality of digital signals by an analog-to-digital converter for each analog pulse signal. A threshold circuit for inputting these digital signals discriminates digital signals exceeding a threshold value. A digital signal integration circuit integrates the plurality of discriminated digital signals for each analog pulse signal and obtains an integrated value for each analog pulse signal. A spectrum generation circuit for inputting the respective integrated values generates a radiation energy spectrum using the integrated values and accurately performs the quantitative analysis and energy analysis of a radioactive nuclide using the radiation energy spectrum. A quantitative analysis and an energy analysis of a radioactive nuclide can be accurately performed while a time resolution of a radiation detector can be maintained.

Abstract: A single photon counting pixel detector chip has a negligible dead time and consequentially high frame rates. The detector chip contains: a) a layer of photosensitive material; b) an N×M array of photo-detector diodes arranged in the layer of photosensitive material; and c) a N×M array of readout unit cells. The readout unit cell contains an input interface connected to a diode output interface, a high-gain charge to voltage amplifying device and a pixel counter being connected to an output of the high-gain voltage amplifying device. The pixel counter is split into a first number of nibble counters. The basic counter cell contains a counting element, a switch, a temporary storage element and an output stage. Additionally, the detector chip has a side shift register to read out the nibble counters row-wise with a predetermined number of nibble row selections.

Abstract: An apparatus (208) includes a plurality of photosensors (310). Photon trigger signals produced in response to signals from the sensors are received by a trigger line network that includes segment (302), intermediate (304), and master (306) lines. The trigger network is configured to reduce a temporal skew introduced by the trigger line network. Validation logic (324) provides a trigger validation output signal (610).

Abstract: Disclosed are a system and method counting photons. Photons are counted through a plurality of counters. Each of the counters generates a flag signal indicating the availability of each counter for an output of a photon detector. The generated flag signal is input into a control unit which controls a switching unit. The control unit allows a signal to be input into a counter, which is not in dead time, based on the received flag signal.

Abstract: Systems, devices, processes, and algorithms for adaptively filtering a signal output from a radiation detector and adaptively sampling the signal. A count rate of events detected by the radiation detector is estimated by a processing unit. An RC time constant of the filter and a sampling rate of an analog-to-digital converter are adjusted based on the estimated count rate. Events are continuously detected by the radiation detector and counted by the processing unit while the adjustable parameters (the RC time constant and the sampling rate) of the filter and the analog-to-digital converter are adjusted on the fly (in real time) to optimize an energy resolution of the detected events, while reducing degradation due to pile-up effects and improving efficiency of the analog-to-digital converter. The filter can be implemented through analog filters, digital filters, or a combination thereof.

Abstract: An apparatus for detecting electromagnetic waves includes a first electromagnetic wave sensor, two first electrodes, a second electromagnetic wave sensor, and two second electrodes. The two first electrodes are electrically connected to different portions of the first electromagnetic wave sensor. The second electromagnetic wave sensor crosses with and is spaced from the first electromagnetic wave sensor. The two second electrodes are electrically connected to different portions of the second electromagnetic wave sensor.

Abstract: A microelectronic device for electromagnetic radiation measurement including a bolometer and an integrator including an integration capacitor, to output, during an integration time, a first signal with variable amplitude and frequency according to the current emitted by the detector, in a form of a series of pulses, and a controller controlling the first signal, to deliver a second signal. The controller includes: a counting device to count each pulse of the first signal detected during an integration time and to indicate an end of counting when a predetermined number N of pulses is reached, and when the end-of-integration time is reached and a predetermined number N of pulses has been counted or deducted by the counter, to emit a second amplitude signal, depending on or equal to the amplitude of the first signal.

Abstract: Disclosed is a low-luminance imaging device using a silicon photomultiplier, which includes a first optical portion for collecting incident light, the silicon photomultiplier including a plurality of microcells so that photons of collected light are converted into photoelectrons which are then multiplied, a phosphor screen for converting the multiplied photoelectrons into photons, a second optical portion for transferring the converted photons, and an image sensor for picking-up the transferred photons thus obtaining an image, so that the imaging device has a high photomultiplication factor thereby obtaining an image having good image quality even at low luminance and achieving a low bias voltage and a small size.

Abstract: A sensor element is provided for conversion of x-radiation into an electrical measurement signal, the sensor element including an x-radiation-absorbing fluid arranged in a housing, and a pressure sensor arranged to detect a pressure of the fluid on the pressure sensor and convert the detected pressure into an electrical measurement signal. A plurality of such sensor elements may be arranged in a matrix-type arrangement to form an x-ray detector.

Abstract: Anodes for proportional radiation counters and a process of making the anodes is provided. The nano-sized anodes when present within an anode array provide: significantly higher detection efficiencies due to the inherently higher electric field, are amenable to miniaturization, have low power requirements, and exhibit a small electromagnetic field signal. The nano-sized anodes with the incorporation of neutron absorbing elements (e.g., 10B) allow the use of neutron detectors that do not use 3He.

Abstract: A circuit arrangement is disclosed for a detector. In at least one embodiment, the circuit arrangement includes a directly-converting semi-conductor material and pulse-shaper in the signal readout electronics assembly. A method is disclosed for a readout of count impulses generated in the semi-conductor material, wherein part of the pulse-shaper is equipped with a relatively longer shaping time constant and a different part of the pulse-shaper is equipped with a relatively shorter shaping time constant.

Abstract: According to an embodiment, an avalanche pixel sensor includes a substrate having opposite first and second surfaces, first sensor elements operating in breakdown mode situated on the first surface of the substrate for detecting ionizing radiation from a radiation-emission source, second sensor elements operating in breakdown mode situated on the second surface of the substrate, the second sensor elements each paired with a corresponding first sensor element to experience substantially coincident breakdown in response to ionizing radiation. Logic elements are each electrically interconnected to a respective pair of first and second sensor elements for receiving a signal or signal representing the substantially coincident breakdown of the respective pair to be distinguished from a dark signal even in either of the pair of the first and second sensor elements.

Abstract: The preferred embodiments of the present invention include a device for measuring an ionizing event in a radiation sensor. The device can include a charge amplifier and a timing shaper. The charge amplifier receives a cathode signal and is configured to output an amplified cathode signal. The timing shaper is operatively connected to the charge amplifier to receive the amplified cathode signal. The timing shaper is configured to generate a first pulse in response to a beginning of the ionizing event and a second pulse in response to an end of the ionizing event. The first and second pulses are associated with a depth of interaction of the ionizing event and are generated in response to a slope of the amplified cathode signal changing.

Abstract: An X-ray detector including a plurality of chips on a printed circuit board, each of the plurality of chips including a plurality of pixel pads on a center portion of the printed circuit board and a plurality of pin pads surrounding the plurality of pixel pads, a plurality of pixel electrodes on and corresponding to the plurality of chips, a redistribution layer electrically connecting the plurality of pixel electrodes and the plurality of pixel pads, a plurality of first electrode pads on a surface opposite to a surface of the plurality of chips including the plurality of pin pads, a wire electrically connecting the plurality of first electrode pads and the plurality of pin pads, a photoconductor on the plurality of pixel electrodes, and a common electrode on the photoconductor.

Abstract: A system for selectively enabling or disabling an optical device. In an illustrative embodiment, the system implements an optical-device theft-prevention system. The theft-prevention system includes a material that is selectively positioned on, in, or relative to the optical device so that the transparency of the material affects a desired operation of the optical device. An energy beam is selectively employed to enable or disable the optical device by affecting the transparency of the material. In a specific embodiment, the fist material includes a dye, such as an energy-sensitive dye. The optical device includes an optical disc, such as Compact Disc (CD) or Digital Video Disc (DVD). The energy-sensitive dye is disposed over an entire readable surface of the optical device.

Abstract: An X-ray detector includes a photoconductor, a first diffusion barrier film on a first surface of the photoconductor, at least one pixel electrode on the first diffusion barrier film, a signal transmitting unit to process an electrical signal output from the at least one pixel electrode, and a common electrode on a second surface of the photoconductor opposite to the first surface of the photoconductor.

Abstract: Disclosed herein is a gas sensitive apparatus that is useful in view of its applicability to the detection or quantitative determination of individual gases present in a gas mixture, and is advantageous in view of its compact size, and its low power consumption.

Abstract: This invention provides a design to process a large range of detection beam current at low noise with a single detector. With such a design, the detection system can generate up to 1010 gain and maximum signal output at more than mini Ampere (mA) level.