Abstract: Embodiments of methods/apparatus according to the application can include radiographic imaging device comprising an imaging array of pixels or a plurality of photosensors including a first side to receive light from a scintillator and a second side to pass second light responsive to impingement of the scintillator light and a reflective layer configured to reflect third light responsive to impingement of the second light. Exemplary photosensors can absorb a prescribed amount of the scintillator light received through a first transparent side and the third light received through a second transparent side. Exemplary reflective arrangements can be selected based upon scintillotor emission characteristics and/or photosensor absorption characteristics. Embodiments of radiographic detector arrays and methods can reduce photosensor thickness to reduce noise, reduce image lag and/or increase charge capacity. Embodiments can maintain the quantum efficiency of a reduced thickness photosensor.

Abstract: A single photon counting pixel detector chip has a negligible dead time and consequentially high frame rates. The detector chip contains: a) a layer of photosensitive material; b) an N×M array of photo-detector diodes arranged in the layer of photosensitive material; and c) a N×M array of readout unit cells. The readout unit cell contains an input interface connected to a diode output interface, a high-gain charge to voltage amplifying device and a pixel counter being connected to an output of the high-gain voltage amplifying device. The pixel counter is split into a first number of nibble counters. The basic counter cell contains a counting element, a switch, a temporary storage element and an output stage. Additionally, the detector chip has a side shift register to read out the nibble counters row-wise with a predetermined number of nibble row selections.

Abstract: A spatially-aware radiation probe system/method allowing for detection and correction of radiation readings based on the position and/or movement of a radiation detector is disclosed. The system incorporates a radiation detector combined with a spatially-aware sensor to permit detection of spatial context parameters associated with the radiation detector and/or object being probed. This spatial context information is then used by analysis software to modify the detected radiation values and/or instruct the radiation probe operator as to appropriate measurement activity to ensure accurate radiation measurements. The spatially-aware sensor may include but is not limited to: distance sensors to determine the distance between the radiation detector and the object being monitored; accelerometers integrated within the radiation detector to detect movement of the radiation detector; and/or axial orientation sensors to determine the axial orientation of the radiation detector.

Abstract: This photodetector comprises a doped semiconductor layer; a reflective layer located underneath semiconductor layer; a metallic structure placed on semiconductor layer that forms, with semiconductor layer, a surface plasmon resonator, a plurality of semiconductor zones formed in semiconductor layer and oppositely doped to the doping of the semiconductor layer; and for each semiconductor zone, a conductor that passes through the photodetector from reflective layer to at least semiconductor zone and is electrically insulated from metallic structure, with semiconductor zone associated with corresponding conductor thus determining an elementary detection surface of the photodetector.

Abstract: A TeraMOS sensor based on a CMOS-SOI-MEMS transistor, thermally isolated by the MEMS post-processing, designed specifically for the detection of THz radiation which may be directly integrated with the CMOS-SOI readout circuitry, in order to achieve a breakthrough in performance and cost. The TeraMOS sensor provides a low-cost, high performance THz passive or active imaging system (roughly in the range of 0.5-1.5 THz) by combining several leading technologies: Complementary Metal Oxide Semiconductor (CMOS)-Silicon on Insulator (SOI), Micro Electro Mechanical Systems (MEMS) and photonics. An array of TeraMOS sensors, integrated with readout circuitry and driving and supporting circuitry provides a monolithic focal plane array or imager. This imager is designed in a commercial CMOS-SOI Fab and the MEMS micromachining is provided as post-processing step in order to reduce cost.

Abstract: An optical element includes a semiconductor layer having an energy band gap larger than a photon energy of light, and a plurality of electrodes in electrical contact with the semiconductor layer. At least one of the electrodes forms a Schottky junction between the electrode and the semiconductor layer; the Schottky junction has a barrier height smaller than the photon energy of the light. At least part of a junction surface between the electrode that forms the Schottky junction and the semiconductor layer includes a light irradiation surface arranged to be irradiated with the light from a surface of the semiconductor layer without the electrodes, and a portion of a coupling structure arranged to be coupled to a terahertz wave that is generated or detected through the irradiation with the light.

Abstract: A radiographic imaging apparatus comprising: a radiation detector configured to be detachable with respect to a patient platform and detect radiation transmitted through an object in one of a moving image capturing mode and a still image capturing mode; a detection unit configured to detect a shift timing of an image capturing mode; a cooling mechanism configured to cool the radiation detector in one of a first cooling mode and a second cooling mode having a higher cooling capacity than the first cooling mode; and a control unit configured to switch the cooling modes of the cooling mechanism based on detection by the detection unit.

Abstract: A radiation detector system/method implementing a corrected energy response detector is disclosed. The system incorporates charged (typically tungsten impregnated) injection molded plastic that may be formed into arbitrary detector configurations to affect radiation detection and dose rate functionality at a drastically reduced cost compared to the prior art, while simultaneously permitting the radiation detectors to compensate for radiation intensity and provide accurate radiation dose rate measurements. Various preferred system embodiments include configurations in which the energy response of the detector is nominally isotropic, allowing the detector to be utilized within a wide range of application orientations. The method incorporates utilization of a radiation detector so configured to compensate for radiation counts and generate accurate radiation dosing rate measurements.

Abstract: A radiation detector dosimeter system/method implementing a corrected energy response detector is disclosed. The system incorporates charged (typically tungsten impregnated) injection molded plastic that may be formed into arbitrary detector configurations to affect radiation detection and dose rate functionality at a drastically reduced cost compared to the prior art, while simultaneously permitting the radiation detectors to compensate for radiation intensity and provide accurate radiation dose rate measurements. Various preferred system embodiments include configurations in which the energy response of the detector is nominally isotropic, allowing the detector to be utilized within a wide range of application orientations. The method incorporates utilization of a radiation detector so configured to compensate for radiation counts and generate accurate radiation dosing rate measurements.

Abstract: An ionizing radiation detection device including a detector of semi-conductor material intended to be biased thanks to electrodes, among which reading electrodes connected to a reading circuit process signals they provide to reject those causing a poor spectrometric response, that is those affected by an induction share and possibly those affected by a charge or electronic noise share.

Abstract: Disclosed herein is a system for fast gain regulation in a gamma-ray spectroscopy instrument. The system includes a detector configured to generate a signal indicative of energy arriving at the detector, and a processor configured to determine one or more system performance indicators. The system also includes a controller configured to compute a first gain correction term based on one of more system performance indicators and change the device gain based on the computed first gain correction tem.

Abstract: A paste for a photoelectric conversion layer used in an X-ray detector includes photoconductive particles, an organic polymer binder, a first organic solvent to dissolve the organic polymer binder, and a second organic solvent. The second organic solvent has a boiling point in a range of between about 150° C. and about 210° C., inclusive.

Abstract: A radiation imaging system includes a portable electronic cassette having a first cable that includes at least one of a signal line and a power line and is provided with a first connector for connecting to another connector, the electronic cassette being configured to acquire an image based on radiation transmitted through an object; a controller having a second cable that includes at least one of a signal line and a power line and is provided with a second connector for connecting to the first connector, the controller being configured to control an imaging operation of the electronic cassette via these cables; and a patient platform having an electronic cassette-housing unit in which the electronic cassette can be installed and a connector holding unit in which the second connector can be fixedly fitted. Here, the first connector has a lock/unlock operation unit configured to detachably connect to the second connector.

Abstract: A detecting apparatus formed on a substrate, includes a plurality of pixels arranged in a matrix, and a signal line electrically connected to the pixels. Each of the pixels includes a sensing element that converts radiant ray or light to electric charges, an amplification thin film transistor that outputs an electric signal based on an amount of the electric charges, a capacitor that holds an electric signal output by the amplification thin film transistor, and a transfer thin film transistor that transfers an electric signal held in the capacitor to the signal line.

Abstract: Systems, devices, and methods are described including implantable radiation sensing devices having exposure determination devices that determines cumulative exposure information based on the at least one in vivo measurand.

Abstract: The present invention provides an innovative solid-state neutron detector that exhibits superior neutron-sensitivities. One embodiment of the present invention includes a Gadolinium-oxide (Gd2O3)-based neutron detector that is highly sensitive to the presence of neutrons, and experiences significant changes in film conductivity, capacitance or both as a result of thermal neutron exposure thereby providing for detection of nuclear radiation.

Abstract: A spectrometer can include a plurality of semiconductor nanocrystals. Wavelength discrimination in the spectrometer can be achieved by differing light absorption and emission characteristics of different populations of semiconductor nanocrystals (e.g., populations of different materials, sizes or both). The spectrometer therefore can operate without the need for a grating, prism, or a similar optical component. A personal UV exposure tracking device can be portable, rugged, and inexpensive, and include a semiconductor nanocrystal spectrometer for recording a user's exposure to UV radiation. Other applications include a personal device (e.g. a smartphone) or a medical device where a semiconductor nanocrystal spectrometer is integrated.

Abstract: The present invention provides a radiation measurement device, which shortens periodic interruption periods in the radiation measurements and prevents damage to the amplifier, and a nuclear medicine diagnosis system using such measurement device. The radiation measurement device comprises a semiconductor radiation detector detecting a radiation, a capacitor, which applies voltage to the semiconductor radiation detector, one or more direct current power supplies each capable of making either of positive and negative electric charge collect on one of the electrodes of the capacitor, a constant-current device, which conducts an electric current from the direct current power supplies to the one of the electrodes of the capacitor, and two or more switching devices installed in the wiring connecting the direct current power supplies and the one of the electrodes of the capacitor. Further disclosed is a nuclear medicine diagnosis system equipped with such radiation measurement device.

Abstract: Apparatus and methods for charge collection control in radiation detectors are provided. One radiation detector includes a semiconductor substrate, at least one cathode on a surface of the semiconductor substrate, and a plurality of anodes on a surface of the semiconductor substrate opposite the at least one cathode, wherein the plurality of anodes have gaps therebetween. The radiation detector further includes a charge collection control arrangement configured to cause one or more charges induced within the semiconductor substrate by incident photons to drift towards one or more of the plurality of anodes.

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device in which micro pads are formed on the wiring layer side and a signal processing chip having micro pads formed on the wiring layer at the positions corresponding to the micro pads of the MOS solid-state image pickup device are connected by micro bumps. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract: A silicon drift detector has an X-ray detection device, an electrode terminal subassembly for electrical connection, a Peltier device, and first and second shields formed between the electrode terminal subassembly and the Peltier device. The first shield is made of a material consisting chiefly of an element having an atomic number smaller than the average atomic numbers of the elements included in the material of the Peltier device. The second shield is made of a material consisting chiefly of an element having an atomic number greater than the atomic numbers of the elements included in the material of the Peltier device.

Abstract: A gas analyser is provided to measure the concentration of formaldehyde within enclosed environments such as within buildings comprising an ultraviolet light source, a sample chamber, a detector. The detector measures the intensity of light received by photosensors within a measurement range of wavelengths, and at least one reference range of wavelengths. Advantageously, the concentration of formaldehyde is determined taking into account fluctuations in the intensity of light emitted by the light source, and in the presence of any interferents such as nitrogen dioxide. A method of measuring the concentration of formaldehyde in enclosed environments is also presented.

Abstract: A radiographic image detecting apparatus and a radiographic image capturing system are provided. The radiographic image detecting apparatus includes a plurality of photoelectric conversion elements for generating electric charge by emission of radiation, a bias line through which a bias voltage is supplied to the photoelectric conversion elements, a power supply for applying the bias voltage to the photoelectric conversion elements through the bias line, a current detector for detecting a bias current flowing through the bias line, and a reading circuit including an amplifying circuit. The current detector includes a current mirror circuit connected between the bias line connected to the photoelectric conversion elements and the power supply.

Abstract: In the radiation detector, a capacitor is connected between a connecting wire which is connected with a preamplifier (amplifier) and another connecting wire. Specifically, the capacitor is connected between the connecting wire and another connecting wire which has the lowest electric resistance with respect to a signal wire among connecting wires connected with a radiation detecting element. This prevents electric current produced by static electricity from flowing to the signal wire and prevents the signal wire or the preamplifier from being damaged by static electricity. A circuit element for a countermeasure against static electricity is not provided at the signal wire, and therefore input capacitance of the preamplifier is kept low. Accordingly, the radiation detector is improved by a sufficient countermeasure against static electricity while input capacitance of the preamplifier is kept low.

Abstract: In the present invention, one or more inventive designs and techniques allow formation of high speed complementary metal oxide semiconductor (CMOS) process compatible tunneling devices that are formed on low dielectric loss sheet-substrates (such as silicon or germanium for infrared or quartz and sapphire for visible or near infrared) having the first and the second smooth planar surfaces and an intermediate surface in the form of a hole, or slit, or a side edge, which extends between and connects the first and second surfaces, so that deposited from opposite sides of the sheet-substrate the first metal layer followed by its oxidation or nanometer thickness tunneling dielectric coating and the second metal layer have an overlapped coupled area within the intermediate surface, thus forming a non-planar metal-insulator-metal (MIM) tunneling junction of low capacitance and high cut-off frequency, which is capable to operate at room temperature at terahertz, infrared, and even optical frequencies.

Abstract: Energy devices such as energy conversion devices and energy storage devices and methods for the manufacture of such devices. The devices include a support member having an array of pore channels having a small average pore channel diameter and having a pore channel length. Material layers that may include energy conversion materials and conductive materials are coaxially disposed within the pore channels to form material rods having a relatively small cross-section and a relatively long length. By varying the structure of the materials in the pore channels, various energy devices can be fabricated, such as photovoltaic (PV) devices, radiation detectors, capacitors, batteries and the like.

Abstract: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Abstract: In order to provide a detecting apparatus which is able to reduce unevenness in image even if an organic material is used for a protective layer covering a plurality of photoeectric conversion elements, the detecting apparatus includes a plurality of photoelectric conversion elements, a protective layer made from an organic material, provided so as to cover the plurality of photoelectric conversion elements, and a conductive member provided between the plurality of photoelectric conversion elements and the protective layer so as to cover the plurality of photoelectric conversion elements and receiving a predetermined potential.

Abstract: A radiation-receiving semiconductor component is specified. A semiconductor body is formed with silicon and has a radiation entrance surface and also an absorption zone. Electromagnetic radiation passes into the semiconductor body through the radiation entrance surface and is absorbed. The absorption zone has a thickness of at most 10 ?m. A filter layer is formed with a dielectric material. The filter layer covers the radiation entrance surface of the semiconductor body. A potting body covers the semiconductor body at least at the radiation entrance surface thereof. The potting body contains a radiation-absorbing material.

Abstract: A method for producing a photosensitive integrated circuit including producing circuit control transistors, producing, above the control transistors, and between at least one upper electrode and at least one lower electrode, at least one photodiode, by amorphous silicon layers into which photons from incident electromagnetic radiation are absorbed, producing at least one passivation layer, between the lower electrode and the control transistors, and producing, between the control transistors and the external surface of the integrated circuit, a reflective layer capable of reflecting photons not absorbed by the amorphous silicon layers.

Abstract: The present invention relates to a novel hybrid anode configuration for a radiation detector that effectively reduces the edge effect of surface defects on the internal electric field in compound semiconductor detectors by focusing the internal electric field of the detector and redirecting drifting carriers away from the side surfaces of the semiconductor toward the collection electrode(s).

Abstract: An apparatus and method for detecting radiation, which can improve the resolution of a radiation image and contribute to the simplification of the manufacture of the apparatus, are provided.

Abstract: A radiation imaging system includes a radiation imaging cassette and a console device. A communication mode between the cassette and the console device is switchable between a wired mode and a wireless mode. Due to shortage of a battery of the cassette, the communication mode is switched to the wired mode to start charging the battery and send image data from the cassette to the console device through a cable. The console device has first and second judging sections. The first judging section judges whether or not a charge level of the battery exceeds a predetermined threshold value. The second judging section judges whether or not radiography is in progress. If it is judged that the charge level of the battery exceeds the predetermined threshold value and the radiography is not in progress, a window that indicates permission for switching to the wireless mode is displayed on a monitor.

Abstract: A radiation detector system/method implementing a corrected energy response detector is disclosed. The system incorporates charged (typically tungsten impregnated) injection molded plastic that may be formed into arbitrary detector configurations to affect radiation detection and dose rate functionality at a drastically reduced cost compared to the prior art, while simultaneously permitting the radiation detectors to compensate for radiation intensity and provide accurate radiation dose rate measurements. Various preferred system embodiments include configurations in which the energy response of the detector is nominally isotropic, allowing the detector to be utilized within a wide range of application orientations. The method incorporates utilization of a radiation detector so configured to compensate for radiation counts and generate accurate radiation dosing rate measurements.

Abstract: An embodiment of the present disclosure provides a method and apparatus for neutron detection. The method comprises receiving neutrons into a number of sensing layers of a plurality of diodes of a number of arrays. Each diode has a sensing layer. A plurality of reactions between the neutrons and each sensing layer of the number of sensing layers are captured in a set of layers for each sensing layer in the number of sensing layers. Each sensing layer is located between the set of layers for each sensing layer. Each set of layers are intrinsic. The method also comprises generating a current pulse for each sensing layer of the number of sensing layers in response to capturing the result of a reaction between the neutrons and each sensing layer of the number of sensing layers.

Abstract: The invention relates to a radiation detector (100) comprising a converter element (102) for converting incident high-energy radiation (X) into charge signals. A cathode (101) and an array(104) of anodes (103) are disposed on different sides of the converter element(102) for generating an electrical field (E0, Ed) within it The strength of said electrical field (E0, Ed) is increased in a first region(Rd) near the anode array(104) with respect to a second region(R0) remote from it. Such an increase may be achieved by doping the first region(Rd) with an electron acceptor. The increased field strength in the first region (Rd) favorably affects the sharpness of charge pulses generated by incident radiation.

Abstract: The present invention provides a readout device of an accelerator beam monitoring detector, comprising: a transimpedance amplifier receiving a charge signal from a particle detector and converting the charge signal into an analog voltage signal; and a data acquisition system comprising an analog-to-digital converter (ADC) to covert the analog voltage signal into digital data.

Abstract: Embodiments of the present invention provide a computer-implemented method for determining an amplification gain for an X-ray image sensor module. Specifically, among other things, embodiments of the present invention provide a computer-implemented infrastructure comprising: capturing an electrical signal by a pixel sensor; and determining an amplification gain of the electrical signal at a charge sensitive amplifier by turning a switch on or off, wherein the switch connects the pixel sensor to a capacitor.

Abstract: A radioactive ray detector card comprises semiconductor elements on a substrate, each having a plurality of first electrodes, provided on one of main surfaces thereof, and a second electrode, provided on other of main surfaces thereof; the substrate having first electrode wirings electrically connected with the plurality of first electrodes, and card edge portions, which transmit signals from the plurality of semiconductor elements to an external electric circuit; the second electrode corresponding to a second electrode identifier, for identifying the semiconductor elements; the first electrodes corresponding to first electrode identifiers, for identifying the plurality of first electrodes, respectively; and the first electrode wirings electrically connect between the first electrodes, corresponding to one of the first electrode identifiers on one semiconductor element of the plurality of semiconductor elements, and the first electrodes, corresponding to one of the same first electrode identifiers on the othe

Abstract: Reflective means comprising substrates, selectively reflects electromagnetic radiation whose frequency lies between 3×109 Hz and 1013 Hz, and includes, for example, a layer of high resistivity silicon, on which the radiation is arranged to be incident, and means for selectively generating charge carriers in the layer to reflect the radiation, for example, by illuminating a face of the substrate with electromagnetic radiation whose wavelength lies between 5 ?m and 100 mn in order to generate the charge carriers. The reflective means may form part of an imaging device in which a scene to be imaged is illuminated by radiation which passes through the reflective means in a coaxial arrangement, the reflected radiation being received by the reflective element while the reflective region is scanned over its entire surface, to produce a stream of radiation reflected from the scene which can be detected and used to drive a display.

Abstract: A radiation-sensitive apparatus includes a first substrate, a radiation-sensitive layer, a plurality of spatially separated integrated circuits, each integrated circuit having: a second substrate, one or more electronic circuit(s) formed in or on the second substrate, and one or more electrode connection pads formed in or on the second substrate, each electrode connection pad electrically connected to at least one of the electronic circuit(s). Pixel electrodes are formed over the first substrate separate from the integrated circuit, each pixel electrode electrically connected to an electrode connection pad. An electronic control circuit is electrically connected to each electronic circuit in each integrated circuit. The electronic circuits are responsive to electrical signals formed by the interaction of electromagnetic radiation and the radiation-sensitive layer, the electrical signals conducted by the pixel electrodes and electrode connection pads.

Abstract: Some embodiments include methods, and systems of machining using a beam of photons. In some embodiments, a machining method to remove material in a machined region may include reducing transparency of the region to at least a predefined wavelength by irradiating the region with a first beam of photons to induce generation of free electrons in the region; and machining the region with a second beam of photons having the predefined wavelength. Other embodiments are described and claimed.

Abstract: A radiation imaging apparatus has a pixel region arranged on a substrate. Arranged in a matrix pattern in the pixel region are pixels, each pixel including a conversion element which converts radiation to electrical charges, and a switching element which is connected to the conversion element therein. The radiation imaging apparatus has, in a region outside the pixel region of the substrate, an intersection at which a signal line connected to the switching element and a bias line connected to the conversion element intersects. At the intersection, a semiconductor layer is arranged between the signal line and the bias line, and a carrier blocking portion is arranged between the semiconductor layer and the signal line.

Abstract: A back-illuminated type MOS (metal-oxide semiconductor) solid-state image pickup device 32 in which micro pads 34, 37 are formed on the wiring layer side and a signal processing chip 33 having micro pads 35, 38 formed on the wiring layer at the positions corresponding to the micro pads 34, 37 of the MOS solid-state image pickup device 32 are connected by micro bumps 36, 39. In a semiconductor module including the MOS type solid-state image pickup device, at the same time an image processing speed can be increased, simultaneity within the picture can be realized and image quality can be improved, a manufacturing process can be facilitated, and a yield can be improved. Also, it becomes possible to decrease a power consumption required when all pixels or a large number of pixels is driven at the same time.

Abstract: An organic photodetector detects infrared radiation, particularly radiation within the spectral region of over 1100 nm, the so-called imager region. Contrary to the currently known photodetectors, such as the Bolometer, II-VI semiconductor, and quantum well detectors, the photodetector contains semiconducting nano-particles for shifting the range of detection, requires no technical and cost-intensive effort in the production thereof, and may be constructed of flexible substrates by simple printing methods.

Abstract: A radiation detector module includes a radiation detecting substrate including a plurality of semiconductor devices mounted thereon for detecting radiation, a fixing member for holding the radiation detecting substrate, and a circuit substrate connected to the radiation detecting substrate. The radiation detecting substrate further includes a mounting board including an edge portion connected to the circuit substrate at one end thereof, and a flexible substrate including a wiring pattern connected to the plurality of semiconductor devices. The fixing member includes a bottom, a first side wall extending in a normal direction to the bottom from one end of the bottom, a second side wall extending in the normal direction to the bottom from the other end of the bottom, and substrate supporting portions on the first side wall and the second side wall.

Abstract: Radiation detectors can be made of n-type or p-type silicon. All segmented detectors on p-type silicon and double-sided detectors on n-type silicon require an “inter-segment isolation” to separate the n-type strips from each other; an alumina layer for isolating the strip detectors is applied, and forms negative charges at the silicon interface with appropriate densities. When alumina dielectric is deposited on silicon, the negative interface charge acts like an effective p-stop or p-spray barrier because electrons are “pushed” away from the interface due to the negative interface charge.

Abstract: This invention relates to an ionizing radiation detection device including a detector (1) of semi-conductor material intended to be biased thanks to electrodes (3.1, 3.2), among which reading electrodes (3.2) connected to a reading circuit (2) process signals they provide to reject those causing a poor spectrometric response, that is those affected by an induction share and possibly those affected by a charge or electronic noise share.

Abstract: A semiconductor device includes a first field effect transistor (FET) located on a substrate; and a second FET located on the substrate, the second FET comprising a first buried oxide (BOX) region located underneath a channel region of the second FET, wherein the first BOX region of the second FET is configured to cause the second FET to have a higher radiation sensitivity that the first FET.

Abstract: A thin film transistor (TFT) array substrate for an X-ray detector that improves a fill factor is disclosed. According to one aspect, the substrate includes a plurality of pixel areas each including a transistor area in which a TFT is formed, and a photodiode area in which a photodiode is formed. A first wire is formed in a first layer disposed in a lower portion of a photodiode layer in which the photodiode is formed, in at least a portion of the transistor area of the photodiode layer, and in a second layer disposed in an upper portion of the photodiode layer. A second wire, insulated from the first wire, extends in the pixel areas and is formed in the second layer. At least one TFT is formed in the transistor area and electrically connected to at least one of the first and second wires.