Abstract: In this method for the surface treatment of a metal part (12) for the purpose of deoxidizing it and/or cleaning it, a sealed chamber (16), in which the part to be treated is placed, is filled with a low-pressure reducing gas mixture, a static magnetic field is created in a region of the chamber (16) separate from the region in which the part (12) to be treated is placed and the gas mixture is excited by means of an electromagnetic wave injected into the chamber (16) so as to generate a treatment plasma in the gas, the intensity of the static magnetic field corresponding to electron cyclotron resonance established in the chamber in a distributed manner.

Abstract: The present invention includes a magnetic storage ring into which electrons or other charged particles can be injected from a point external to the ring and still subscribe a path, after injection, contained within the magnetic storage ring. The magnetic storage ring consists of purely static (permanent) magnetic fields. The particles pass one or more times through a solid target that causes the high energy charged particles to emit radiation and damps the momentum of the particles, so that they cannot escape the magnetic field, allowing them to be captured therein.

Abstract: An improved double chamber ion source comprising a plasma generating chamber, a charge exchange chamber and a divider structure therebetween. The charge exchange chamber includes magnetic shielding material to reduce exposure of interior components to magnetic field lines externally generated. The double compartment ion source further comprises inclusion of a heat shield and/or a cooling system to overcome deleterious effects caused by increased temperature in the plasma generating chamber. The divider structure has a plurality of apertures having a configuration to reduce surface area on the divider structure in the charge exchange chamber.

Abstract: Induction coils of an induction coupling type plasma processing apparatus are divided into a plurality of coil elements, and a plurality of lead wire portions for connecting between the coil elements. The coil elements are disposed in the inside of a process chamber, while the lead wire portions are disposed in the outside of the process chamber. The coil elements disposed in the process chamber are in the form of short arcs as a result of the division, so that they can be easily arranged symmetrically with respect to the center of the process chamber, whereby a uniform plasma distribution can be easily achieved.

Abstract: The operating characteristics of a linear geometry Hall plasma source scaled to operate in the 50 to 100 Watt power range are described. Two thruster acceleration channels are implemented-one of alumina and one of boron nitride. Differences in operation with the two channel materials are attributable to differences in the secondary electron emission properties. In either case, however, operation is achieved despite the lack of a closed electron current drift in the Hall direction, suggesting that there is an anomalous axial electron mobility, due to either plasma fluctuations or collisions with the channel wall. Strong low frequency oscillations in the discharge current, associated with the depletion of propellant within the discharge, are seen to appear and vary with changes in the applied magnetic field strength. The frequency of this oscillatory mode is higher than that seen in larger (and higher power) discharges, due to the decreased residence time of the propellant within the channel.

Abstract: The method consists in the fact that from at least one external source (3) electromagnetic energy is conducted to at least one hollow electrode (1) with elements (14) locally increasing the density of electromagnetic energy, by which, inside the cavities of the electrode (1) and/or at its orifice and in the external environment an intensive discharge is generated.

Abstract: A microhollow cathode discharge (MHCD) cavity and microfluidic channel are combined for interrogation of samples. The apparatus includes a dielectric body and layers of conductive material defining a MHCD cavity containing an environment for carrying a gas discharge within the MHCD cavity. The gas discharge generates gas based electromagnetic waves. Electrical connections apply a cathode discharge potential to the layers of conductive material. A microfluidic channel is integrated on the substrate, and a path extends from the MHCD cavity laterally through a portion of the microfluidic channel. A detector, which may be integrated on the common substrate, is positioned to receive electromagnetic waves from the path and electronic circuitry is coupled to the detector for acquiring and processing data.

Abstract: A plasma processing apparatus including a processing chamber having an upper surface, a first inlet, and a second inlet. The apparatus includes a wall extending from the upper surface into the processing chamber. The wall encircles the first inlet, and the wall has a base end and a terminal end, where the terminal end includes the second inlet. The apparatus includes a first inductive coil provided within the wall and encircling the first inlet, and a second inductive coil provided within the wall and encircling the second inlet. Additionally, the apparatus includes a first magnet array provided within the base end of the wall adjacent the first inlet, and a second magnet array provided within the terminal end of the wall adjacent the second inlet. A method of controlling plasma chemistry within a plasma processing apparatus is provided that includes the steps of providing a first magnetic field about a first injection region and providing a second magnetic field about a second injection region.

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber includes a chamber within which a plasma is both ignited and sustained for processing. The chamber is defined at least in part by a wall and further includes a plasma confinement arrangement. The plasma confinement arrangement includes a magnetic array disposed around the periphery of the process chamber configured to produce a magnetic field which establishes a cusp pattern on the wall of the chamber. The cusp pattern on the wall of the chamber defines areas where a plasma might damage or create cleaning problems. The cusp pattern is shifted to improve operation of the substrate processing system and to reduce the damage and/or cleaning problems caused by the plasma's interaction with the wall. Shifting of the cusp pattern can be accomplished by either moving the magnetic array or by moving the chamber wall.

Abstract: A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an exhaust port. A confinement ring defines an area above a wafer. The wafer area pressure is dependent on the pressure drop across the confinement ring. The confinement ring is part of a wafer area pressure control device that provides wafer area pressure control range greater than 100%. Such a wafer area pressure control device may be three adjustable confinement rings and a confinement block on a holder that may be used to provide the desired wafer area pressure control.

Abstract: In an apparatus for the doping of vessel supports (stents) with radioactive and non-radioactive atoms comprising an electron-cyclotron-ion-source (ECRIS) with an arrangement for extracting an ion beam from the ECRIS, a magnetic separation device for the splitting of the ion beam arranged in a downstream area of the extracted ion beam and an irradiation chamber in which the vessel supports are exposed to the selected partial ion beam, the ECRIS includes a microwave-permeable plasma chamber with a magnetic, six-pole arrangement, an electrically conductive tube portion disposed within the plasma chamber co-axially with the six-pole arrangement and having an in-coupling opening and also being axially movable for an adjustment of an optimal in-coupling and a co-axial cable extends through the in-coupling opening and has an outer sleeve which is in electrical contact and an inner conductor which is electrically insulated and forms at the inner wall of the tube a flat loop whose end is in contact with the tube wall.

Abstract: A persistent ionization plasma generator is described that forms a plasma in a cavity that persists for a time after termination of the exciting RF electric field. The plasma generator includes a RF cavity that is in fluid communication with a source of ionizing gas. The RF cavity can be at substantially atmospheric pressure. An RF power source that generates an RF electric field is electromagnetically coupled to the RF cavity. An ultraviolet light source is positioned in optical communication to the cavity. An antenna is positioned within the cavity adjacent to the ultraviolet light source. A chamber for confining the plasma can be positioned in the cavity around the antenna.

Abstract: A compound plasma configuration can be formed from a device having pins, and an annular electrode surrounding the pins. A cylindrical conductor is electrically connected to, and coaxial with, the annular electrode, and a helical conductor coaxial with the cylindrical conductor. The helical conductor is composed of wires, each wire electrically connected to each pin. The annular electrode and the pins are disposed in the same direction away from the interior of the conducting cylinder.

Abstract: The present invention provides an inductively coupled RF plasma source that can improve the nonuniformity in substrate treatment by canceling out the radial electric fields generated between a plasma and an antenna coil. The inductively coupled RF plasma source comprises a plurality of one-turn antenna coils, each having one end connected to a RF supply along a circumferential side wall of a plasma generating chamber and the other end connected to a grounding potential, arranged at intervals in the longitudinal axial direction of the plasma generating chamber. One end of each one-turn antenna coil displaced at equal angles from each other in a circumferential direction.

Abstract: In one embodiment of a compact closed-drift ion source, an ionizable gas is introduced into a annular discharge region. An anode is at one end of this region and an electron-emitting cathode is near the opposite and open end. A magnetic circuit extends from an inner pole piece to an outer pole piece, with both pole pieces near the open end. The electron current in the discharge region interacts with the magnetic field therein to generate and accelerate ions out of the open end. A permeable enclosure surrounds the anode end of the discharge region. Adjacent elements of the permeable enclosure, the inner pole piece, and any intermediate permeable elements are in close proximity, one to the next. A magnetizing means is located only between the outer pole piece and the permeable enclosure.

Abstract: A process device and a method for processing a substrate. A dipole ring magnet (DRM) is arranged in a manner so that a leakage magnetic field in the neighborhood of the process device and at a position a prescribed distance therefrom is minimized. The dipole ring magnet (DRM) rotates around an outer periphery of a process chamber which has a plasma generation device, a substantially cylindrical shield plate covering an outer periphery of the dipole ring magnet. The shield is rotated coaxially with the dipole ring magnet and in a direction opposite to the rotation of the dipole ring magnet. In this way a magnetic field is generated in a direction that cancels leakage magnetic flux generated outside the dipole ring magnet.

Abstract: For a low-pressure gas discharge switch, at least two main electrodes are arranged at least a distance d from each other, the electrodes in an arcing chamber forming a cathode and an anode of a discharge path for the low-pressure gas discharge. The gas discharge is triggered by increasing the electron density in a cathode cavity, at least the cathode in its disk-shaped area having at least one aperture, the cathode and anode apertures preferably being opposite and aligned with each other, for triggering the discharge. An arrangement generating a magnetic field superimposed on the discharge between the main electrodes (1, 1a, 2, 2a) are assigned to the main electrodes (1, 1a, 2, 2a), with which either a predominantly parallel magnetic field is generated or a predominantly perpendicular one, with regard to the direction of current in the discharge.

Abstract: A method and apparatus produce short-wave radiation from a gas-discharge plasma, comprising pre-ionization of the gas in the discharge region between coaxial electrodes achieved through an axial aperture formed in one of the electrodes and initiation of a pinch-type discharge. In order to increase the efficiency, energy, average power and stability of the radiation of the gas-discharge plasma, pre-ionization is achieved by a flux of radiation having wavelengths from the UV to X-ray range and by a flux of accelerated electrons from the plasma of a pulsed sliding discharge initiated in a region not optically communicating with the axis of the pinch-type discharge, with a rate of growth of the discharge voltage across the region of more than 1011 V/s, the fluxes of radiation and electrons being formed axially symmetrically and directed into the part of the discharge region outside the axis.

Abstract: A plasma processing system includes a processing vessel for housing therein an object to be processed. In the upper portion of the processing vessel, a substantially disk-shaped electrode plate having a facing surface facing the object is provided. A radio-frequency wave supply unit supplies radio-frequency waves having a flattened waveform which forms substantially a sinusoidal wave whose crest and trough portions are substantially horizontally flattened. The radio-frequency waves supplied from the supply unit are propagated in diametrically opposite directions on the facing surface of the electrode to form standing waves. Similar to the supplied radio-frequency waves, the standing waves also have a waveform which forms substantially a sinusoidal wave whose crest and trough portions are substantially horizontally flattened.

Abstract: A device for generating a free cold plasma beam having a high-frequency plasma source and a hollow body transparent to electromagnetic radiation, which is provided with at least one gas inlet opening and at least one beam outlet opening is proposed. The high-frequency plasma source is in particular a microwave plasma source or a high-frequency plasma source and initially generates at least within the hollow body a cold gas plasma, which is conducted as a free cold plasma beam via the beam outlet opening from the hollow body and enters the work chamber. The work chamber is under vacuum. The free plasma beam remains bundled in the work chamber and can be used there for cleaning, etching, or plasma coating with a reactive gas.

Abstract: There is provided a method capable of shortening a preheat time when a thin film is deposited after a preheat is carried out. The current values of a main electromagnetic coil and an auxiliary electromagnetic coil during a preheat and during a thin-film deposition are set to be different from each other to change the shape of an obtained magnetic field so that the magnetic field has a small magnetic flux density although it has higher uniformity during the thin-film deposition, whereas the magnetic field has a large magnetic flux density although it has lower uniformity during the preheat. As a result, a substantially uniform plasma is produced in the plane of a wafer during the thin-film deposition, so that it is possible to carry out a uniform thin-film deposition. On the other hand, during the preheat, a plasma having a larger density than that during the thin-film deposition is produced although the uniformity thereof is lower.

Abstract: An ion pump anode eliminates the intercellular spaces while maintaining an efficient cell shape in which the plasma sheath follows the contour of the cell wall. The cell are preferably quasi-cylindrical and can be manufactured by folding one or more metal strip into a corrugation and welding the strip to create separate cells. By eliminating the intercellular region, which support a high plasma density, the formation of dendrites under such a region is prevented and instabilities caused by those dendrites are eliminated.

Abstract: In an ion source, a rear reflector 10 is electrically insulated from both a plasma production vessel 2 and a filament 6. The rear reflector 10 and an opposed reflector 8 are electrically connected. Further, a DC bias power supply 32 is a power supply individuated from a filament power supply 24 and an arc power supply 26. The DC bias power supply 32 is placed for applying a bias voltage VB between the opposed reflector 8 and the rear reflector 10 and the plasma production vessel 2 with both the reflectors 8 and 10 as negative potential.

Abstract: Process and control arrangement for introducing pulsing energy introduction into magnetron discharges. The process includes feeding a charge to the electrodes of a magnetron arrangement via a ignition source at a time t0, and, after the feeding of the electric charge, determining an ignition of the magnetron discharge. The process also includes introducing a current, having a predetermined value, from a boost source at a time t1, and, at a time t2, separating the ignition source from the electrodes of the magnetron arrangement. The introduction of the current by the boost source continues for a certain duration tEIN. The process also includes interrupting the introduction of the electric energy for a predetermined time tAUSj.

Abstract: A plurality of electrode bars are arranged in parallel with each other, and side electrode bars are connected to the corresponding opposite ends of the electrode bars, thereby forming a ladder-like RF discharge electrode. Power supply points are arranged axisymmetrically with respect to a reference line, which is a bisector which bisects one side of the RF discharge electrode, while being spaced a predetermined distance from the reference line, thereby suppressing voltage distribution on the ladder electrode, which has an effect on uniformity of discharge distribution, to a sufficiently low level of nonuniformity. Thus, uniform distribution of film deposition rate can be obtained, thereby enabling uniform deposition even in large-area applications.

Abstract: A plasma processing apparatus includes at least one pair of a first rotary permanent magnet system (1) and a second rotary permanent magnet system (2) The rotary permanent magnet systems further include individual permanent magnets (3) and are positioned opposite to each other. The individual permanent magnets (3) have a maximum magnetic induction of more than 10−1 Tesla. Additionally a driver system (4) for driving a motion of the rotary magnet systems (1, 2) is used in combination with a basic plasma processing device (5). By means of the rotary permanent magnet systems time variable magnetic flux lines (6) will be formed for affecting the plasma (7) produced by the plasma processing device (5).

Abstract: A low energy ion gun for ion beam processing. The ion gun includes a plasma chamber having an open ended, conductive, non-magnetic body, a first end of which is closed by a flat or minimally dished dielectric member and with electrodes at a second end thereof opposite the first end. The ion gun also has primary magnets arranged around the body for trapping electrons adjacent the wall of the plasma chamber in use of the ion gun and an r.f. induction device. The electrodes include multi-aperture grids arranged for connection to respective positive potential sources and positioned to contact the plasma in the plasma chamber. The apertures of the grids are aligned so that particles emerging from an aperture of a first one of the grids are accelerated through corresponding apertures of the other grids in the form of a beamlet. A plurality of beamlets forms a beam.

Abstract: A plasma density information measuring method capable of easily measuring the plasma density information over the long term, a probe for measuring the plasma density information, and a plasma density information measuring apparatus are disclosed. A measuring probe is set such that a tip end of a glass tube of the measuring probe is brought into contact with plasma PM to be measured. High-frequency power sent through a coaxial cable is supplied to the plasma PM from a loop antenna through a wall of the tube, and reflection power of the high-frequency power is received by the loop antenna to obtain a counter frequency variation of reflection coefficient of the high-frequency power. In the obtained reflection coefficient, a portion thereof in which the reflection coefficient is largely reduced is a peak at which strong absorption of high-frequency power is caused due to the plasma density. The plasma density can be obtained from the plasma absorption frequency.

Abstract: A plasma generating apparatus includes a vacuum container, an anode and a cathode including multiple electrodes, a power supply for applying a high voltage to the anode and the cathode, and switching elements for switching the electrodes in the anode and the cathode to which the high voltage is applied. The combination of the electrodes are switched by switching elements to form a sheet plasma at any desired angle relative to directional electromagnetic waves.

Abstract: A planar gas introducing unit arranged within a capacitively coupled plasma (CCP) reactor includes a top electrode, a gas inlet plate having a plurality of gas inlet holes and a gas reservoir 20 formed between the top electrode and the gas inlet plate. The top electrode includes a plurality of magnets which are arranged such that the magnets operate to substantially prevent an enhanced erosion of the plurality of gas inlet holes. Each of the plurality of magnets can be arranged to correspond to a gas inlet hole such that an axis of each of the plurality of magnets is aligned with an axis of a corresponding gas inlet hole and magnetic fields emitted from the plurality of magnets pass through the gas inlet holes in a direction substantially corresponding to the axis of the corresponding gas inlet hole. The planar gas introducing unit of the present invention prevents plasma enhanced erosion generated at both ends of the gas inlet holes.

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber.

Abstract: A command triggered plasma opening switch assembly using an amplification stage. The assembly surrounds a coaxial transmission line and has a main plasma opening switch (POS) close to the load and a trigger POS upstream from the main POS. The trigger POS establishes two different current pathways through the assembly depended on whether it has received a trigger current pulse. The initial pathway has both POS's with plasma between their anodes and cathodes to form a short across the transmission line and isolating the load. The final current pathway is formed when the trigger POS receives a trigger current pulse which energizes its fast coil to push the conductive plasma out from between its anode and cathode, allowing the main transmission line current to pass to the fast coil of the main POS, thus pushing its plasma out the way so as to establish a direct current pathway to the load.

Abstract: A system and method for initiating and maintaining a plasma in a chamber, in accordance with the helicon dispersion relation, requires an antenna for radiating RF energy into the chamber. An interferometer, or some similar device, is used in the system to monitor the plasma density level in the chamber, as the plasma is being produced. The plasma density level is then used to control the variable characteristics of the RF energy in accordance with the helicon dispersion relation.

Abstract: A plasma source includes a magnetic field generating unit for generating within a plasma chamber a magnetic field B for electron cyclotron resonance, which has a direction crossing a direction in which the plasma is discharged through a plasma emission aperture. The plasma source is applied to an ion implanting apparatus.

Abstract: Plasma processing is carried out in an apparatus having improved stability and reliability for plasma ignition. The improved plasma ignition characteristics result from a modified RF induction coil. One or more nonresonant sections have been added to the RF power induction coil. The nonresonant sections generate enhanced electric fields for igniting the plasma.

Abstract: A plasma processing system includes a processing vessel for housing therein an object to be processed. In the upper portion of the processing vessel, a substantially disk-shaped electrode plate having a facing surface facing the object is provided. A radio-frequency wave supply unit supplies radio-frequency waves having a flattened waveform which forms substantially a sinusoidal wave whose crest and trough portions are substantially horizontally flattened. The radio-frequency waves supplied from the supply unit are propagated in diametrically opposite directions on the facing surface of the electrode to form standing waves. Similar to the supplied radio-frequency waves, the standing waves also have a waveform which forms substantially a sinusoidal wave whose crest and trough portions are substantially horizontally flattened.

Abstract: A four-nozzle plasma generator comprising two anode electrode chambers and two cathode electrode chambers connected to DC power sources and generating four plasma jets of which the shape and the path are determined by an external magnetic field system. The plasma jets converge on a central area into which the material to be processed is injected, in order to form a single plasma stream. The nozzles are symmetrically arranged on a hood which includes a flat water-cooled diaphragm provided with a central aperture.

Abstract: VHF/UHF power having a frequency of about 40 MHz or higher is applied across generally radial elements of an antenna and the phase of a standing wave component of the voltage in the generally radial elements is adjusted to provide relatively uniform density of a high density plasma across an area of at least the size of a semiconductor wafer being processed. Capacitive coupling of power to the plasma enhances the hot tail distribution of electron energies which is associated with low levels of gas cracking and the production of radicals such as fluorine which are not material-selective in semiconductor processing operations such as oxide etching. Accordingly, material-selectivity of processes may be maintained while the high density plasma accelerates the process to significantly improve tool throughput.

Abstract: Large area atmospheric-pressure plasma jet. A plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250° C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two planar, parallel electrodes are employed to generate a plasma in the volume therebetween. A “jet” of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly spacing the rf-powered electrode.

Abstract: In a power control apparatus for controlling power supply of an ion source having an indirectly headed cathode, the cathode bias power supply which provides a bias potential between the filament and cathode has an output that is effected by changes in impedance of the electron flow in the region between the filament and the cathode. Such impedance changes can arise due to changes in the chemistry of materials in this region, changes in gas pressure or physical changes, for example. A bias supply controller in the power control apparatus maintains the output power of the cathode bias power supply unit at a desired level, thus not effected by changes in impedance of the electron flow between the filament and the indirectly heated cathode.

Abstract: A wafer processing chamber 11 includes a wafer support 12, a dielectyric window 13 and coaxial coils 15 and 16 located outside the dielectric window 13 for inducing a plasma within the chamber. A variety of coil/dielectric windows are described together with protocols for their control.

Abstract: In a high intensity discharge lamp, at least one of an arc bend amount and an apparent width of arc is controlled by a simple configuration at low cost. A high intensity discharge lamp system 110 has a high intensity discharge lamp 111 and an operating circuit 113 for driving the high intensity discharge lamp 111. In the high intensity discharge lamp 111, a rare gas and a filling material 136 containing a metal halide as a light generating substance are enclosed in the arc tube 121 provided with a pair of electrodes 122a and 122b. The lamp system is disposed such that the line connecting the electrodes 122a and 122b is horizontal, and by applying a magnetic field having a vertical magnetic flux thereto and by varying the frequency of alternating current for driving the high intensity discharge lamp 111, at least one of an arc bend amount and an apparent width of arc can be easily controlled.

Abstract: The invention provides a multiple-cell ion-beam source in which magnetic poles of all adjacent cells have alternating polarities, i.e., the cells arranged in a single row from the center to the periphery of the cathode plate have polarities in the order of N-S-N-S-N . . . , etc. As a result, the direction of magnetic lines of forces in the aforementioned rows alternates, and therefore the magnetic flux is not accumulated towards the center. This means that the source of such a construction does not have dimensional limitations and ensures uniform distribution of the ion-beam current density over the entire surface of the object. Intensity of the magnetic field for each individual cell can be controlled individually. This allows adjustment in the distribution of the ion-beam current density over the surface of the object.

Abstract: An apparatus for producing a plasma with a direct current. A nonmetallic first electrode, having a first surface and a second surface, has pores formed between the first and second surfaces. A conductive liquid is dispersed within the pores of the nonmetallic first electrode. The conductive liquid provides direct current pathways through the nonmetallic first electrode. A second electrode also has a first surface and a second surface. A direct current source provides a first direct current electrical potential and second direct current electrical potential. A first conductive connector is electrically connected to the direct current source, and is disposed adjacent the first surface of the nonmetallic first electrode. The first conductive connector receives the first direct current electrical potential from the direct current source and provides the first direct current electrical potential to the nonmetallic first electrode.

Abstract: A plasma processing reactor includes a helical resonator including a top plate and a helical coil, the helical coil is made of a metal with a length of &lgr;/4, wherein n is an integer and &lgr; is a wavelength of rf frequency applied to the helical coil. The reactor also includes a plasma process chamber including a wafer holder arranged at a lower position therein and a wafer to be processed is loaded on the wafer holder. The helical resonator has a vertical bar for introducing a gas, the vertical bar is fixed to the top plate of the helical resonator and is connected to a gas inlet port. A partition wall separates the helical resonator and the plasma process chamber. The partition wall includes an outer metal ring, a circular central metal plate, and a doughnut-shaped dielectric plate between the outer metal ring and the central metal plate, the doughnut-shaped dielectric plate having an inner diameter and an outer diameter.

Abstract: A novel plasma treatment system (200) including one or more novel computer codes. These codes provide a high density plasma for plasma immersion ion implantation applications.

Abstract: A specially designed magnetic shunt is provided encircling the anode region and/or annular gas distribution area of an ion accelerator with closed electron drift. The magnetic shunt is constructed to concentrate the magnetic field at the ion exit end, such that the location of maximum magnetic field strength is located downstream from the inner and outer magnetic poles of the accelerator. The specially designed shunt also results in desired curvatures of magnetic field lines upstream of the line of maximum magnetic field strength, to achieve a focusing effect for increasing the life and efficiency of accelerator.

Abstract: A device for the production of microwave plasmas with a microwave generator 1 and its coupling system to a waveguide resonator 5 which encloses a plasma chamber 7 is proposed, the short side of the cross-section of the resonator 5 lying parallel, facing the z axis, in the common wall with the chamber 7, and the microwave power being coupled from the resonator 5 into the chamber 7 via coupling points 6 in this short cross-sectional side. The coupling points are preferably formed as azimuthal slot couplers in the common wall of 5 and 7. The reference numbers relate to FIG. 1.

Abstract: A plasma generating apparatus is provided which uses slipping surface discharge and microwave to generate a large quantity of plasma in a different gases or gaseous mixtures (including electro-negative gases) in a wide range of gas pressure (from a deep vacuum up to atmospheric pressure). The plasma generating apparatus includes high voltage pulse means for generating a high voltage pulse, plasma generating means based on the slipping surface discharge which excites as the high voltage pulse generated by high voltage pulse generating means, is supplied, microwave generating means for generating a microwave radiation for producing plasma, a chamber in which the plasma generating means are placed, and the plasma collects, the chamber receiving the microwave radiation from the microwave generating means, and a gas inlet through which a specific gas flows into the chamber, to generate a large quantity of plasma according to the plasma generating means and microwave generating means.

Abstract: An improved magnetically-confined anode plasma pulsed ion beam source. Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure and the slow field structure near the anode of the ion beam source, by a gas port design which localizes the gas delivery into the gap between the fast coil and the anode, by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means which optimally adjusts the plasma formation position in the ion beam source.