With Magnetic Field Patents (Class 315/111.41)
  • Publication number: 20080246406
    Abstract: A helicon plasma source has a discharge tube, a radio frequency antenna disposed proximate the discharge tube, and a permanent magnet positioned with respect to the discharge tube so that the discharge tube is in a far-field region of a magnetic field produced by the permanent magnet.
    Type: Application
    Filed: December 21, 2007
    Publication date: October 9, 2008
    Applicant: The Regents of the University of California
    Inventor: Francis F. Chen
  • Patent number: 7425711
    Abstract: A thermal control plate is easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal control plate, that is separable and from a base assembly to allow for ease of servicing consumable components of the anode assembly. The thermal control plate may support a gas distributor and an anode in the anode assembly. The thermal control plate may have a port for passing working gas from one side of the thermal control plate to the other. An interface surface on the thermal control plate may have a pattern of recesses to allow the working gas to disperse underneath the gas distributor.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: September 16, 2008
    Assignee: Veeco Instruments, Inc.
    Inventors: David M. Burtner, Scott A. Townsend, Daniel E. Siegfried
  • Patent number: 7420182
    Abstract: This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces a gas into the plasma accelerator. A cathode emits electrons attracted to the anode for ionizing the gas and neutralizing ion flux emitted from the plasma accelerator. An electrical circuit coupled between the anode and the cathode having a DC power source provides DC voltage. A magnetic circuit structure including a magnetic field source establishes a transverse magnetic field in the plasma accelerator that creates an impedance to the flow of the electrons toward the anode to enhance ionization of the gas to create plasma and which in combination with the electric circuit establishes an axial electric field in the plasma accelerator.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: September 2, 2008
    Assignee: Busek Company
    Inventors: Vladimir Hruby, Kurt Hohman, Thomas Brogan
  • Patent number: 7411352
    Abstract: A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit the ion beam. The aperture or outlet of the nozzle has a second width, which second width is less than the first width. An ionizable gas is introduced to the discharge cavity. At least one electrode connected to the AC power supply, alternatively serving as an anode or a cathode, is capable of supporting at least one magnetron discharge region within the discharge cavity when serving as a cathode electrode. A plurality of magnets generally facing one another, are disposed adjacent each discharge cavity to create a magnetic field null region within the discharge cavity.
    Type: Grant
    Filed: April 19, 2006
    Date of Patent: August 12, 2008
    Assignee: Applied Process Technologies, Inc.
    Inventor: John E. Madocks
  • Patent number: 7408303
    Abstract: A pulsed plasma accelerator includes two electrodes (1) arranged between dielectric bars (2) made from an ablating material, a discharge channel with an open end part whose walls are defined by the surfaces of electrodes (1) and dielectric bars (2), an energy accumulator (11) and current supplies (14,15) for connecting the electrodes (1) with the energy accumulator (11). The current supplies (14, 15) define in conjunction with the electrodes (1) and the energy accumulator (11) an external electric circuit, with characteristics of the external electric circuit being selected on the condition: 2?C/L, where C (?F) is the electric capacitance of the external electric circuit, and L is the inductance of the external electric circuit, L?100 nH. During operation of the plasma accelerator, quazi-nonperiodic pulse discharges are ignited and maintained in the discharge channel.
    Type: Grant
    Filed: September 20, 2004
    Date of Patent: August 5, 2008
    Assignee: Gosudarstvennoe Nauchnoe Uchrezhdenic “Gosudarstvenny Nauchno-Issledovatelsky Institut Prikladnoi Mechanik I Elektrodinamiki”
    Inventors: Nikolay Nikolaevich Antropov, Grigory Alexandrovich Diyakonov, Michail Michailovich Orlov, Garry Alekseevich Popov, Valery Konstantinovich Tyutin, Vladimir Nikolaevich Yakovlev
  • Publication number: 20080180030
    Abstract: A plasma processing apparatus includes a vacuum container, a processing chamber arranged in the vacuum container and supplied with a processing gas, a holding electrode arranged in the processing chamber for holding a sample to be processed, on the upper surface thereof, an electric field supply unit for supplying an electric field and a magnetic field supply unit for supplying a magnetic field to form the plasma in the space above the holding electrode in the processing chamber, and a grounded wall member making up the inner wall, substantially in the shape of a truncated cone, of the processing chamber above the holding electrode.
    Type: Application
    Filed: February 28, 2007
    Publication date: July 31, 2008
    Inventors: Tsutomu Tetsuka, Tadayoshi Kawaguchi
  • Patent number: 7404879
    Abstract: Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a material to be deposited on the substrate into the process chamber, facing the substrate holder, a gas injection unit to inject a process gas into the process chamber, a bias power source that applies a bias potential to the substrate holder, a helical self-resonant coil that produces plasma for ionization of the deposition material in the process chamber, one end of the helical self-resonant coil being grounded and the other end being electrically open, and an RF generator to supply an RF power to the helical self-resonant coil. The use of a helical self-resonant coil enables the IPVD apparatus to ignite and operate at very low chamber pressure such as approximately 0.
    Type: Grant
    Filed: September 2, 2004
    Date of Patent: July 29, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yuri Nikolaevich Tolmachev, Dong-joon Ma, Sergiy Yakovlevich Navala, Dae-il Kim
  • Patent number: 7405411
    Abstract: In certain example embodiments of this invention, there is provided an ion source including an anode and a cathode. In certain example embodiments, a multi-piece outer cathode is provided. The multi-piece outer cathode allows precision adjustments to be made, thereby permitting adjustment of the magnetic gap between the inner and outer cathodes. This allows improved performance to be realized, and/or prolonged operating life of certain components. This may also permit multiple types of gap adjustment to be performed with different sized outer cathode end pieces. In certain example embodiments, cathode fabrication costs may also be reduced.
    Type: Grant
    Filed: May 6, 2005
    Date of Patent: July 29, 2008
    Assignee: Guardian Industries Corp.
    Inventor: Hugh A. Walton
  • Publication number: 20080169764
    Abstract: A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are electrostatically confined in a deep energy well, created by tuning an externally applied magnetic field. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by the nuclear force, thus forming fusion products that emerge in the form of an annular beam. Energy is removed from the fusion product ions as they spiral past electrodes of an inverse cyclotron converter. Advantageously, the fusion fuel plasmas that can be used with the present confinement and energy conversion system include advanced (aneutronic) fuels.
    Type: Application
    Filed: March 17, 2008
    Publication date: July 17, 2008
    Inventors: Hendrik J. Monkhorst, Norman Rostoker
  • Patent number: 7400096
    Abstract: An all permanent magnet Electron Cyclotron Resonance, large diameter (e.g., 40 cm) plasma source suitable for ion/plasma processing or electric propulsion, is capable of producing uniform ion current densities at its exit plane at very low power (e.g., below 200 W), and is electrodeless to avoid sputtering or contamination issues. Microwave input power is efficiently coupled with an ionizing gas without using a dielectric microwave window and without developing a throat plasma by providing a ferromagnetic cylindrical chamber wall with a conical end narrowing to an axial entrance hole for microwaves supplied on-axis from an open-ended waveguide. Permanent magnet rings are attached inside the wall with alternating polarities against the wall. An entrance magnet ring surrounding the entrance hole has a ferromagnetic pole piece that extends into the chamber from the entrance hole to a continuing second face that extends radially across an inner pole of the entrance magnet ring.
    Type: Grant
    Filed: July 19, 2004
    Date of Patent: July 15, 2008
    Assignee: The United States of America as represented by the Administrator of The National Aeronautics and Space Administration
    Inventors: John Foster, Michael Patterson
  • Publication number: 20080164819
    Abstract: Provided is a semiconductor apparatus using an ion beam. The semiconductor apparatus may include a first grid to which a voltage applied. The voltage applied to the first grid may have the same potential level as that of a reference voltage applied to a wall portion of a plasma chamber in which plasma may be generated. The first grid may adjoin the plasma. Therefore, a potential level difference between the first grid and the wall portion of the plasma chamber may be zero, and thus the plasma may be stable.
    Type: Application
    Filed: January 8, 2008
    Publication date: July 10, 2008
    Inventors: Sung-Wook Hwang, Yung Hee Yvette Lee, Chul-Ho Shin, Jin-Seok Lee
  • Patent number: 7391160
    Abstract: A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are electrostatically confined in a deep energy well, created by tuning an externally applied magnetic field. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by the nuclear force, thus forming fusion products that emerge in the form of an annular beam. Energy is removed from the fusion product ions as they spiral past electrodes of an inverse cyclotron converter. Advantageously, the fusion fuel plasmas that can be used with the present confinement and energy conversion system include advanced (aneutronic) fuels.
    Type: Grant
    Filed: November 4, 2004
    Date of Patent: June 24, 2008
    Assignees: Regents of the University of California, University of Florida Research Foundation
    Inventors: Hendrik J. Monkhorst, Norman Rostoker
  • Patent number: 7371991
    Abstract: Disclosed is a structure aimed to reduce the frequency of replacement of an insulating spacer arranged between grids of an ion beam irradiation device. More specifically, disclosed is a so-called insulating spacer arranged in order to maintain insulation between the grids, the insulating spacer having an annular groove in a portion composed of an annular, substantially plane portion opposed to a grid and a cylindrical portion being raised from the central portion of the annular, substantially plane portion and abutting the grid, with the annular groove being perpendicular to the plane and separating the peripheral portion of the annular portion from the cylindrical portion.
    Type: Grant
    Filed: August 17, 2005
    Date of Patent: May 13, 2008
    Assignee: TDK Corporation
    Inventors: Etsuo Takeuchi, Akira Hatakeyama
  • Patent number: 7372059
    Abstract: Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can produce a plasma pinch that can last several orders of magnitude longer than what is typically sustained in a Z-pinch, thus enabling the device to provide more power output than what has been hitherto predicted in theory or attained in practice. Such power output may be used in a lithography system for manufacturing integrated circuits, enabling the use of EUV wavelengths on the order of about 13.5 nm. Lastly, the process of manufacturing such a plasma pinch is discussed, where the process includes providing a sheared flow of plasma in order to stabilize it for long periods of time.
    Type: Grant
    Filed: October 17, 2005
    Date of Patent: May 13, 2008
    Assignee: The University of Washington
    Inventors: Uri Shumlak, Raymond Golingo, Brian A. Nelson
  • Patent number: 7342236
    Abstract: An ion source is cooled using a cooling plate that is separate and independent of the anode. The cooling plate forms a coolant cavity through which a fluid coolant (e.g., liquid or gas) can flow to cool the anode. In such configurations, the magnet may be thermally protected by the cooling plate. A thermally conductive material in a thermal transfer interface component can enhance the cooling capacity of the cooling plate. Furthermore, the separation of the cooling plate and the anode allows the cooling plate and cooling lines to be electrically isolated from the high voltage of the anode (e.g., using a thermally conductive, electrically insulating material). Combining these structures into an anode subassembly and magnet subassembly can also facilitate assembly and maintenance of the ion source, particularly as the anode is free of coolant lines, which can present some difficulty during maintenance.
    Type: Grant
    Filed: February 18, 2005
    Date of Patent: March 11, 2008
    Assignee: Veeco Instruments, Inc.
    Inventors: David Matthew Burtner, Scott A. Townsend, Daniel E. Siegfried, Viacheslav V. Zhurin
  • Patent number: 7342361
    Abstract: A plasma source is described. The source includes a reactive impedance element formed from a plurality of electrodes. By providing such a plurality of electrodes and powering adjacent electrodes out of phase with one another, it is possible to improve the characteristics of the plasma generated.
    Type: Grant
    Filed: May 11, 2005
    Date of Patent: March 11, 2008
    Assignee: Dublin City University
    Inventor: Albert Rogers Ellingboe
  • Patent number: 7327089
    Abstract: A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.
    Type: Grant
    Filed: September 19, 2003
    Date of Patent: February 5, 2008
    Assignee: Applied Process Technologies, Inc.
    Inventor: John E. Madocks
  • Patent number: 7323821
    Abstract: A device generates and/or influences electromagnetic radiation from a plasma, for the lithographic production of semiconductor elements. For example, the device generates and/or reflects EUV-radiation for EUV-lithography. In a first example, a magnetic means (10) generates at least one inhomogeneous magnetic field (11) and is provided as means for the targeted screening of at least one surface of the device (1; 5; 12) and/or another component (5; 12) from the charge carriers in the plasma (3).
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: January 29, 2008
    Assignee: Qimonda AG
    Inventors: Siegfried Schwarzl, Stefan Wurm
  • Patent number: 7319295
    Abstract: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode.
    Type: Grant
    Filed: March 13, 2003
    Date of Patent: January 15, 2008
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Hiroshi Mashima, Keisuke Kawamura, Akemi Takano, Yoshiaki Takeuchi, Tetsuro Shigemizu, Tatsufumi Aoi
  • Patent number: 7316199
    Abstract: A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.
    Type: Grant
    Filed: May 14, 2002
    Date of Patent: January 8, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Keiji Horioka, Chun Yan, Taeho Shin, Roger Alan Lindley, Qi Li, Panyin Hughes, Douglas H. Burns, Evans Y. Lee, Bryan Y. Pu
  • Patent number: 7315128
    Abstract: A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and maybe a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.
    Type: Grant
    Filed: May 5, 2006
    Date of Patent: January 1, 2008
    Assignee: Tokyo Electron Limited
    Inventors: Mirko Vukovic, Derrek Andrew Russell
  • Patent number: 7312579
    Abstract: A Hall-current ion source for generation of low and high energy ion beams with selection of magnetic fields and emission currents, where there are utilized low magnetic fields and high emission currents that are higher than discharge currents for low energy ion beams, 15-100 eV; high magnetic fields and emission currents that are equal to discharge currents are utilized for discharge voltages providing ion beam energies of 100-500 eV. Other measures are utilized for protection of a gas distribution area and a magnet from pinching by an ion beam penetration through a reflector by a buffer chamber providing better gas distribution in anode area, a protective ring in a center part of a reflector, and others.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: December 25, 2007
    Assignee: Colorado Advanced Technology LLC
    Inventor: Viacheslav V. Zhurin
  • Patent number: 7259378
    Abstract: A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed on the open end of the channel and extends therefrom in a second direction, where the first direction is opposite to the second direction. The distal ends of the first magnetic pole and the second magnetic pole define a gap comprising the opening in the first end. An anode is disposed within the channel. A primary magnetic field line is disposed between the first magnetic pole and the second magnetic pole, where that primary magnetic field line has a mirror field greater than 2.
    Type: Grant
    Filed: July 8, 2005
    Date of Patent: August 21, 2007
    Assignee: Applied Process Technologies, Inc.
    Inventor: John Madocks
  • Patent number: 7253572
    Abstract: An electromagnetic induced accelerator based on coil-turn modulation, including inner and outer cylinders with different diameters, the cylinders being coaxially disposed to form a channel which is a spatial portion therebetween; a discharging coil wound spirally inward along the upper surface of the channel for generating plasma by inducing a magnetic field and secondary current in the channel; and inner and outer coils wound helically around along the inner surface of the inner cylinder and the outer surface of the outer cylinder in parallel with each other for accelerating plasma in the direction of a common axis of the inner and outer cylinders by offsetting the magnetic field induced in the direction of the axis.
    Type: Grant
    Filed: November 29, 2005
    Date of Patent: August 7, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-taek Park, Vladimir Volynets, Young-eal Kim
  • Patent number: 7250727
    Abstract: Beam processing methods including e-beam welding and e-beam evaporation for thin film deposition are implemented with a novel high power, long focus electron source. The high power, long focus electron source generates an e-beam. The e-beam is transported through a series of steering magnets to steer the beam. At least one refocusing magnet is provided to refocus the e-beam. A final steering magnet bends the e-beam to focus on a target, such as a weld joint or a deposition target.
    Type: Grant
    Filed: June 2, 2005
    Date of Patent: July 31, 2007
    Assignee: UChicago Argonne LLC
    Inventors: John W. Lewellen, John Noonan
  • Patent number: 7208878
    Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.
    Type: Grant
    Filed: January 23, 2006
    Date of Patent: April 24, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jai-kwang Shin, Seong-gu Kim, Young-kyou Park, Hyeon-ill Um
  • Patent number: 7193369
    Abstract: A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.
    Type: Grant
    Filed: February 20, 2003
    Date of Patent: March 20, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Min Min, Dae-Kyu Choi, Do-In Bae, Yun-Sik Yang, Wan-Goo Hwang, Jin-Man Kim
  • Patent number: 7180242
    Abstract: A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.
    Type: Grant
    Filed: May 19, 2005
    Date of Patent: February 20, 2007
    Assignee: The Regents of the University of California
    Inventors: Norman Rostoker, Michl Binderbauer, Artan Qerushi, Hooshang Tahsiri
  • Patent number: 7180243
    Abstract: The closed electron drift plasma accelerator comprises an annular ionization chamber, an acceleration chamber on the same axis as the ionization chamber, an annular anode, a hollow cathode, a first DC voltage source, an annular gas manifold, a magnetic circuit, and magnetic field generators. A coaxial annular coil is placed in the cavity of the ionization chamber, is provided with bias conductive cladding connected, together with the electrically-conductive material of the inside faces of the walls of the ionization chamber, to the positive pole of a second voltage source whose negative pole is connected to the anode, and constitutes an additional magnetic field generator which, together with the other magnetic field generators, forms a magnetic field having a magnetic line of force with an “X” point corresponding to a magnetic field zero situated between the coaxial annular coil and the anode.
    Type: Grant
    Filed: July 8, 2004
    Date of Patent: February 20, 2007
    Assignee: SNECMA Moteurs
    Inventors: Olivier Secheresse, Antonina Bougrova, Alexei Morozov
  • Patent number: 7129656
    Abstract: An apparatus and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.
    Type: Grant
    Filed: July 1, 2005
    Date of Patent: October 31, 2006
    Assignee: The Regents of the University of California
    Inventors: Norman Rostoker, Michl Binderbauer
  • Patent number: 7126284
    Abstract: A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.
    Type: Grant
    Filed: December 17, 2004
    Date of Patent: October 24, 2006
    Assignee: The Regents of the University of California
    Inventors: Norman Rostoker, Michl Binderbauer, Eusebio Garate, Vitaly Bystritskii
  • Patent number: 7126283
    Abstract: A method of generating an electrical discharge in a high pressure gas contained in a sealed enclosure. The method includes driving a helical coil resonator at an RF frequency to generate an RF electric-magnetic field sufficient to generate an electrical discharge in the high pressure gas. The electrical discharge produces an emission spectrum that may be spectroscopically analyzed to determine the composition and impurity content of the gas.
    Type: Grant
    Filed: September 14, 2004
    Date of Patent: October 24, 2006
    Assignee: Advanced Lighting Technologies, Inc.
    Inventors: Ju Gao, Joseph T. Verdeyen
  • Patent number: 7119489
    Abstract: An RMIM electrode, a method for manufacturing the RMIM electrode, and a sputtering apparatus using the RMIM electrode, wherein the RMIM electrode includes a magnet unit including a cylinder-shaped magnet located at a center of the magnet unit and a plurality of ring-shaped magnets having increasingly larger diameters surrounding the cylinder-shaped magnet; and a driver unit for supporting and for off-axis-rotating the magnet unit, wherein in the magnet unit, adjacent magnets have opposite magnetization directions.
    Type: Grant
    Filed: March 13, 2003
    Date of Patent: October 10, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jai-kwang Shin, Seong-gu Kim, Young-kyou Park, Hyeon-ill Um
  • Patent number: 7115185
    Abstract: The reaction rate of a feed gas flowed into a plasma chamber is controlled. In one embodiment a pulsed power supply repeatedly applies a high power pulse to the plasma chamber to increase the reaction rate of plasma within the chamber, and applies a low power pulse between applications of the high power pulses.
    Type: Grant
    Filed: September 16, 2003
    Date of Patent: October 3, 2006
    Assignee: Advanced Energy Industries, Inc.
    Inventors: Juan Jose Gonzalez, Fernando Gustavo Tomasel, Andrew Shabalin
  • Patent number: 7116054
    Abstract: A Hall-type ion source for generation of ion beams for technological applications presents itself a hybrid ion source, where properties of closed drift systems and end-Hall ion sources are combined for more efficient operation. An ion source has shorter central magnetic pole than regular closed drift ion source with magnetic screens that provide positive magnetic gradient in an ion source's discharge channel. An ion source with these combined properties has higher ratio of ion beam current to discharge current than end-Hall ion source and wider range of discharge parameters than closed drift ion source.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: October 3, 2006
    Inventor: Viacheslav V. Zhurin
  • Patent number: 7102292
    Abstract: A system and method for maintaining a plasma in a plasma region by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are reduced by placing RF energy absorbing resistive loads in energy receiving communication with the plasma, the resistive loads having a frequency dependent attenuation characteristic such that the resistive loads attenuate electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.
    Type: Grant
    Filed: June 3, 2004
    Date of Patent: September 5, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Richard Parsons, Wayne L Johnson
  • Patent number: 7090742
    Abstract: A device for producing inductively coupled plasma and method thereof, wherein a coil is uniformly and dispersedly arranged on a lateral wall in a chamber, instead of the prior device of a permanent magnet mounted on an external wall of the chamber, and the coil is so disposed as to allow a magnetic field formed from the coil to be mutually reinforced at a central portion of the coil, such that charged particles created inside the chamber are effectively isolated relative to the lateral wall of the chamber, thereby enabling to produce plasmas of high density and high uniformity. Intensity and frequency of power source applied to the coil are adjusted to enable to adjust the density and uniformity of plasmas produced in the chamber according to required process characteristics in etching or depositing process using plasmas such that flexibility is provided to the process using the plasmas and design of new process can be free from restriction calling for process chamber configure.
    Type: Grant
    Filed: February 7, 2003
    Date of Patent: August 15, 2006
    Inventors: Kwang-Ho Kwon, Jae-Ki Sim
  • Patent number: 7084572
    Abstract: The invention relates to various advantageous embodiments of a plasma-accelerator configuration, especially for the configuration and design of electron sources used for ionizing the working gas and/or neutralizing the discharged plasma jet.
    Type: Grant
    Filed: June 24, 2002
    Date of Patent: August 1, 2006
    Assignee: Thales Electron Devices GmbH
    Inventors: GĂĽnter Kornfeld, Werner Schwertfeger, Roland Lenz, Gregory Coustou
  • Patent number: 7084573
    Abstract: A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and may be a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface magnet generally parallel to the electrode surface with a magnetic field extending radially over the electrode surface. Side magnets, such as inner and outer annular ring magnets, have polar axes that intersect the electrode with poles closest to the electrode of the same polarity as the adjacent pole of the surface magnet. A ferromagnetic back plate or back magnet interconnects the back poles of the side magnets. A ferromagnetic shield behind the magnet pack confines the field away from the iPVD material source.
    Type: Grant
    Filed: March 5, 2004
    Date of Patent: August 1, 2006
    Assignee: Tokyo Electron Limited
    Inventors: Mirko Vukovic, Derrek Andrew Russell
  • Patent number: 7081710
    Abstract: An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second magnets. A guide provides microwaves to a space between the first and second magnets.
    Type: Grant
    Filed: May 13, 2004
    Date of Patent: July 25, 2006
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Andrei-B. Petrin, Jai-Kwang Shin, Jae-Joon Oh, Seong-Gu Kim, Ji-Hyun Hur
  • Patent number: 7026763
    Abstract: An apparatus and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.
    Type: Grant
    Filed: December 23, 2002
    Date of Patent: April 11, 2006
    Assignee: The Regents of the University of California
    Inventors: Norman Rostoker, Michl Binderbauer
  • Patent number: 7015646
    Abstract: A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.
    Type: Grant
    Filed: December 23, 2002
    Date of Patent: March 21, 2006
    Assignee: Regents of the University of California
    Inventors: Norman Rostoker, Michl Binderbauer, Artan Qerushi, Hooshang Tahsiri
  • Patent number: 7002148
    Abstract: A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are electrostatically confined in a deep energy well, created by tuning an externally applied magnetic field. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by the nuclear force, thus forming fusion products that emerge in the form of an annular beam. Energy is removed from the fusion product ions as they spiral past electrodes of an inverse cyclotron converter. Advantageously, the fusion fuel plasmas that can be used with the present confinement and energy conversion system include advanced (aneutronic) fuels.
    Type: Grant
    Filed: April 2, 2003
    Date of Patent: February 21, 2006
    Assignees: The Regents of the University of California, University of Florida Research Foundation
    Inventors: Hendrik J. Monkhorst, Norman Rostoker
  • Patent number: 6995515
    Abstract: A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.
    Type: Grant
    Filed: March 11, 2004
    Date of Patent: February 7, 2006
    Assignee: The Regents of the University of California
    Inventors: Norman Rostoker, Michl Binderbauer, Artan Qerushi, Hooshang Tahsiri
  • Patent number: 6982520
    Abstract: An efficiency enhancing anode-magnetic structure of a Hall effect thruster produces a radially directed magnetic field between inner and outer poles at the exit portion of a gas distribution channel. The field-shaping structure includes magnetic material extending alongside the channel with an associated secondary flux-generating component to create an axially directed magnetic field in the area between the anode of the thruster and the exit portion of the gas distribution channel.
    Type: Grant
    Filed: September 10, 2002
    Date of Patent: January 3, 2006
    Assignee: Aerojet-General Corporation
    Inventor: Kristi H. de Grys
  • Patent number: 6960888
    Abstract: A method of producing and accelerating an ion beam comprising the steps of: providing a magnetic field with a cusp that opens in an outward direction along a centerline that passes through a vertex of the cusp: providing an ionizing gas that sprays outward through at least one capillary-like orifice in a plenum that is positioned such that the orifice is on the centerline in the cusp, outward of the vortex of the cusp; providing a cathode electron source, and positioning it outward of the orifice and off of the centerline; and positively charging the plenum relative to the cathode electron source such that the plenum functions as an anode. A hot filament may be used as the cathode electron source, and permanent magnets may be used to provide the magnetic field.
    Type: Grant
    Filed: January 5, 2004
    Date of Patent: November 1, 2005
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: John E. Foster
  • Patent number: 6922021
    Abstract: A plasma lamp including a waveguide body consisting essentially of at least one dielectric material having a dielectric constant greater than approximately 2. The body is coupled to a microwave power source which causes the body to resonate in at least one resonant mode. At least one lamp chamber integrated with the body contains a bulb with a fill forming a light-emitting plasma when the chamber receives power from the resonating body. A bulb either is self-enclosed or an envelope sealed by a window or lens covering the chamber aperture.
    Type: Grant
    Filed: January 31, 2003
    Date of Patent: July 26, 2005
    Assignee: Luxim Corporation
    Inventors: Frederick M. Espiau, Yian Chang
  • Patent number: 6906469
    Abstract: An rf ion source suitable for low power operation over a range of pressures in air which comprises discharge electrode, a cathode and an anode, the cathode being connected to an rf signal supply through an associated coupling means and the anode adapted to provide a surface area over which a plasma discharge may occur no greater than substantially that of the cathodal area over which the discharge may occur. The anode and cathode are arranged to be maneuverable with respect to one another in order to reduce the power requirements of the system and provide a means of controlling the rf discharge and ionization. An extended rf ion source, comprising a series of electrode pairs, provides flexibility for use in a variety of circumstances.
    Type: Grant
    Filed: November 21, 2001
    Date of Patent: June 14, 2005
    Assignee: The Secretary of State for Defence
    Inventors: Marian Lesley Langford, Stuart Neville Cairns, Andrew John Marr, Ian Blair Pleasants
  • Patent number: 6900596
    Abstract: A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface.
    Type: Grant
    Filed: September 4, 2002
    Date of Patent: May 31, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Jang Gyoo Yang, Daniel J. Hoffman, James D. Carducci, Douglas A. Buchberger, Jr., Melissa Hagen, Matthew L. Miller, Kang-Lie Chiang, Gerardo A. Delgadino, Robert B. Hagen
  • Patent number: 6897616
    Abstract: A plasma transport system uses a slow-wave power signal in external radio-frequency (RF) inductors to force plasmas to flow through ducts, such as from a plasma generator to a point of use. A magneto-hydrodynamic force is deliberately created by the RF inductors to displace plasma electrons down along the inside of the ductwork. A charge separation results that both drags the ions along and slows down the electrons with the ion drag. The consequence is that both electrons and ions are motivated down the ductwork and the overall plasma charge stays neutral. A directed stream of energetic ions and neutral gas atoms can be realized. The RF electric fields induced in the plasma tend to counteract any electron cooling and help maintains the plasma electron temperature enough to reduce later reionization power demands.
    Type: Grant
    Filed: June 20, 2002
    Date of Patent: May 24, 2005
    Inventor: Raphael A. Dandl