Abstract: The invention is directed to a method and an arrangement for generating extreme ultraviolet (EUV) radiation, i.e., radiation of high-energy photons in the wavelength range from 11 to 14 nm, based on a gas discharge. The object of the invention, to find a novel possibility for generating EUV radiation in which an extended life of the system is achieved with stable generation of a dense, hot plasma column, is met according to the invention in that a preionization discharge is ignited between two parallel disk-shaped flat electrodes prior to the main discharge by a surface discharge along the superficies surface of a cylindrical insulator with a plasma column generated through the gas discharge with pulsed direct voltage, which preionization discharge carries out an ionization of the working gas in the discharge chamber by means of fast charged particles.

Abstract: The present invention provides a magnetic neutral line plasma discharge processing system that makes it no longer necessary to use an insulator wall in the vacuum chamber and metal such as stainless steel may alternatively be used, while maintaining the features including both time/space and space controllability relative to the size and the location of low pressure, low temperature and high density plasma to be generated. Thus, the cost of the system can be reduced remarkably. As a result, the scope of application of discharge plasma systems can be broadened.

Abstract: This invention relates to plasma processing apparatus and in particular, but not exclusively, to inductively coupled plasma helicon or electron cyclotron resonance apparatus. A plasma generation chamber is sat above a process chamber, in which is located a workpiece support. A plasma generation or source region exists and coils are provided to create magnetic mirrors above and below the plasma generation zone, whereby electrons will be reflected back towards the plasma zone and there is no electrical conductive path extending around or through at least the upper mirror.

Abstract: A method tests a plasma processing system having a chamber, an RF power source, and a matching network. An RF power signal is generated from the RF power source to the chamber without igniting any plasma within the chamber. The voltage of the RF power signal, the current of the RF power signal, and the phase of the RF power signal, received by the chamber is measured while holding other parameters affecting the chamber constant. A value representative of an impedance of the chamber is computed based on the voltage, the current, and the phase. The value is then compared with a reference value to determine any defects in the plasma processing system. The reference value is representative of the impedance of a defect-free chamber.

Abstract: A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry.

Abstract: Methods and apparatus for generating a strongly-ionized plasma are described. An apparatus for generating a strongly-ionized plasma according to the present invention includes an anode and a cathode that is positioned adjacent to the anode to form a gap there between. An ionization source generates a weakly-ionized plasma proximate to the cathode. A power supply produces an electric field in the gap between the anode and the cathode. The electric field generates excited atoms in the weakly-ionized plasma and generates secondary electrons from the cathode.

Abstract: A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are electrostatically confined in a deep energy well, created by tuning an externally applied magnetic field. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by the nuclear force, thus forming fusion products that emerge in the form of an annular beam. Energy is removed from the fusion product ions as they spiral past electrodes of an inverse cyclotron converter. Advantageously, the fusion fuel plasmas that can be used with the present confinement and energy conversion system include advanced (aneutronic) fuels.

Abstract: A simultaneous discharge apparatus comprises a plurality of plasma treatment apparatuses and a single high-frequency power supply, in which the plurality of plasma treatment apparatuses are discharged simultaneously using the single high-frequency power supply, the plurality of plasma treatment apparatuses being a plasma treatment apparatus in which a coil electrode is used as an electrode for generating plasma and inductive coupled plasma is mainly generated, wherein a power supply line from the high-frequency power supply is branched into each plasma treatment apparatus through a branch section, and fixed capacitors are provided on the downstream side of the branch section and between the branch section and each plasma treatment apparatus, respectively. It is preferable to adjust the impedance of the fixed capacitor to be 2.3-2.7 times that of the coil electrode which is located on the same downstream side.

Abstract: Apparatus and method for inductively coupling electrical power to a plasma in a semiconductor process chamber. In a first aspect, an array of wedge-shaped induction coils are distributed around a circle. The sides of adjacent coils are parallel, thereby enhancing the radial uniformity of the magnetic field produced by the array. In a second aspect, electrostatic coupling between the induction coils and the plasma is minimized by connecting each induction coil to the power supply so that the turn of wire of the coil which is nearest to the plasma is near electrical ground potential. In one embodiment, the hot end of one coil is connected to the unbalanced output of an RF power supply, and the hot end of the other coil is connected to electrical ground through a capacitor which resonates with the latter coil at the frequency of the RF power supply.

Abstract: A high current density, low voltage ion source includes a vacuum chamber. A plasma source induces generation of a plasma within the chamber, or injects a plasma directly into the chamber. A magnetic and electric field cooperate to guide the ions from the plasma region in a beam towards a substrate to be processed by the ions. A method of use of the ion source includes production of an ion beam for processing of a substrate.

Abstract: Methods and apparatus for generating uniformly-distributed plasma are described. A plasma generator according to the invention includes a cathode assembly that is positioned adjacent to an anode and forming a gap there between. A gas source supplies a volume of feed gas and/or a volume of excited atoms to the gap between the cathode assembly and the anode. A power supply generates an electric field across the gap between the cathode assembly and the anode. The electric field ionizes the volume of feed gas and/or the volume of excited atoms that is supplied to the gap, thereby creating a plasma in the gap.

Abstract: A point projection type flood plasma source implements a magnetron sputter cold cathode electron source in a discharge cavity separated from a process chamber by a narrow conduit and a solenoid magnetic field. The solenoid magnetic field impedes radial electron flow in the nozzle and the process chamber. Process gas flows into the discharge cavity and through the nozzle to the process chamber. This gas is ionized in the nozzle and the process chamber by electrons trapped in the solenoid magnetic field. The result is a dense plasma plume in the process chamber useful for a number of applications. The source has particular advantages for reactive gas processes such as those requiring oxygen.

Abstract: A plasma generator particularly adapted for use as an ion beam generator. The plasma generator includes a plasma chamber body having an interior cavity and formed of a dielectric material such as boron nitride. The plasma chamber body is surrounded by a solenoidal magnet and is coupled to a radiofrequency waveguide. In the preferred embodiment both the plasma chamber body and the waveguide are composed of a dielectric material. Reductions in both the size of the chamber and the size of the waveguide, with resulting reductions in required input power, are achieved over comparable plasma generators. Use of a circularly polarized RF signal enhances coupling between the plasma and the RF signal.

Abstract: An apparatus for activating an ionizable product is provided, which includes means for generating a magnetic field and means for applying plasma particles by corona discharge to the ionizable product placed on the means for generating the magnetic field.

Abstract: An electrode assembly for use in a plasma processing system including a base electrode adapted to be coupled to a source of RF energy, a removable electrode removably coupled to the base electrode, and a material interposed between a surface of the base electrode and a surface of the removable electrode.

Abstract: The plasma source includes a cathode assembly. An anode is positioned adjacent to the cathode assembly. An excited atom source generates an initial plasma and excited atoms from a volume of feed gas. The initial plasma and excited atoms are located proximate to the cathode assembly. A power supply generates an electric field between the cathode assembly and the anode. The electric field super-ionizes the initial plasma so as to generate a high-density plasma.

Abstract: The plasma source includes a cathode assembly having an inner cathode section and an outer cathode section. An anode is positioned adjacent to the outer cathode section so as to form a gap there between. A first power supply generates a first electric field across the gap between the anode and the outer cathode section. The first electric field ionizes a volume of feed gas that is located in the gap, thereby generating an initial plasma. A second power supply generates a second electric field proximate to the inner cathode section. The second electric field super-ionizes the initial plasma to generate a plasma comprising a higher density of ions than the initial plasma.

Abstract: This ion source is set up to satisfy a relation L<3.37B−1(VA)×10−6 where the arc voltage applied between a plasma production vessel 2 and a filament 8 is VA[V], the magnetic flux density of a magnetic field 19 within the plasma production vessel 2 is B[T], and the shortest distance from a most frequent electron emission point 9 located almost at the tip center of the filament 8 to a wall face of the plasma production vessel 2 is L[m].

Abstract: A method of plasma generation is provided in which the application of a static magnetic field perpendicular to the direction of the RF electric field allows for the propagation of an electromagnetic wave from a coil outside the chamber, through a dielectric window and into the plasma. The RF electric field and the DC magnetic field are both in the plane of the dielectric window in what may be called a planar helicon configuration. Due to magnetic field effects, the electromagnetic wave excites an electron cyclotron wave that heats the electrons by mode conversion of the whistler wave a few centimeters from the dielectric window where a mode conversion relationship among characteristic antenna wavelength, generator frequency, magnetic field strength and plasma electron density is satisfied. The curvature of the magnetic field lines generates plasma flows that expel the plasma towards the processing space.

Abstract: An electromagnetic induced accelerator includes internal and external circular loop inductors for inducing a magnetic field when a current is applied to the internal and external circular loop inductors in a same direction, the internal and external circular loop inductors being spaced apart from each other by a predetermined distance and disposed coaxially and parallel to each other; a channel, which includes dielectric layers contacting the internal and external circular loop inductors, disposed between the internal and external circular loop inductors, wherein a secondary current is induced in the channel between the dielectric layers by the induced, magnetic field; and a discharging coil for supplying a pulse energy to the channel and for generating a plasma.

Abstract: A plasma apparatus of fabricating a semiconductor device includes: a chamber including a reaction region; a chuck in the reaction region; and a plasma-measuring device on a top surface of the chuck, comprising: a probing plate including a plurality of probes on a top surface thereof; and a detecting plate under the probing plate, the detecting plate including a plurality of detecting portions corresponding to the plurality of probes, the plurality of detecting portions being electrically connected to the plurality of probes.

Abstract: A plasma processing system includes a magnetic field generator that can produce a magnetic field and a sheet optic element that can produce a light sheet capable of illuminating particles in a processing chamber of the system. An imaging device can acquire image data corresponding to the particles illuminated by the light sheet. The magnetic field generator, the sheet optic element and the imaging device can be positioned relative to one another to access the plasma. An image processor can process the image data so as to obtain the concentration of particles in the light sheet. A method of measuring particle concentration in a plasma processing system includes positioning the magnetic field generator, a sheet optic element and an imaging device relative to one another to access the plasma and obtaining the concentration of particles in the light sheet. A method of minimizing particles in the chamber is also provided.

Abstract: An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.

Abstract: According to one embodiment, an apparatus is described. The apparatus includes a metal vacuum chamber with two or more dielectric breaks. It also includes a number of excitation transformers located so as to distribute the total induced voltage in the chamber among the dielectric breaks. Distributing the total induced voltage among the breaks results in lower wall damage and, consequently, longer lifetimes for the plasma chambers.

Abstract: A method and apparatus for generating electrical fields within the ion flight path of a mass spectrometer are provided. Gratings having a planar array of parallel conductive strands and electrically connected to a voltage source are placed in the ion flight path so that at least a portion of the conductive strands traverses the flight path. The gratings may be arranged within the ion flight path so that the conductive strands of each of the gratings are aligned behind the conductive strands of a first grating, with respect to the ion flight path, thus providing high ion transmission.

Abstract: A device for controlling emission of electrons from an arc chamber of a plasma flood system into an ion beam in an ion implanter for implanting ions into a substrate. In one embodiment, the invention comprises a mechanical shutter disposed in a discharge opening between the arc chamber and the plasma guide tube of the implanter. The bore size of the shutter can be selectively varied in order to control the emission of electrons from the arc chamber into the ion beam in the plasma guide tube. In another embodiment, the invention comprises an electron-attracting probe which is disposed in the discharge opening.

Abstract: An RF generator is provided for use in an RF plasma system. The RF generator includes: a power source that is operable to generate RF power signals at a tuned frequency; a sensor unit that is adapted to detect the RF power signals and operable to generate analog signals representative of the RF power signals, where the analog signals include a frequency of interest and a plurality of interfering frequency components; and a sensor signal processing unit that is adapted to receive the analog signals from the sensor unit and to band limit the analog signals within a predefined bandwidth that passes the frequency of interest and rejects interfering frequency components.

Abstract: A plasma antenna generator includes an ionizable material, an explosive charge capable of projecting the ionizable material upon detonation, and a detonator coupled with the explosive charge. An electromagnetic pulse transmitting system includes an electromagnetic pulse generator and a plasma antenna generator capable of reradiating an electromagnetic pulse emitted from the electromagnetic pulse generator. A method includes providing an explosive device comprising an ionizable material, detonating the explosive device to propel the ionizable material, and ionizing the ionizable material to form at least one plasma trail. A sensing system includes an electromagnetic pulse generator, a plasma antenna generator capable of reradiating an electromagnetic pulse emitted from the electromagnetic pulse generator, and a sensing system capable of receiving and analyzing at least a portion of the electromagnetic pulse after being reflected from an interface.

Abstract: A compact plasma accelerator having components including a cathode electron source, an anodic ionizing gas source, and a magnetic field that is cusped. The components are held by an electrically insulating body having a central axis, a top axial end, and a bottom axial end. The cusped magnetic field is formed by a cylindrical magnet having an axis of rotation that is the same as the axis of rotation of the insulating body, and magnetized with opposite poles at its two axial ends; and an annular magnet coaxially surrounding the cylindrical magnet, magnetized with opposite poles at its two axial ends such that a top axial end has a magnetic polarity that is opposite to the magnetic polarity of a top axial end of the cylindrical magnet. The ionizing gas source is a tubular plenum that has been curved into a substantially annular shape, positioned above the top axial end of the annular magnet such that the plenum is centered in a ring-shaped cusp of the magnetic field generated by the magnets.

Abstract: A method and system for controlling electron densities in a plasma processing system. By applying a dither voltage and a correction voltage to a voltage-controlled oscillator, electron (plasma) density of a plasma processing system (acting as an open resonator) may be measured and controlled as part of a plasma-based process.

Abstract: An RF generator is provided for use in an RF plasma system. The RF generator includes: a power source that is operable to generate RF power signals at a tuned frequency; a sensor unit that is adapted to detect the RF power signals and operable to generate analog signals representative of the RF power signals, where the analog signals include a frequency of interest and a plurality of interfering frequency components; and a sensor signal processing unit that is adapted to receive the analog signals from the sensor unit and to band limit the analog signals within a predefined bandwidth that passes the frequency of interest and rejects interfering frequency components.

Abstract: A plasma processing apparatus including a processing chamber having an upper surface, a first inlet, and a second inlet. The apparatus includes a wall extending from the upper surface into the processing chamber. The wall encircles the first inlet, and the wall has a base end and a terminal end, where the terminal end includes the second inlet. The apparatus includes a first inductive coil provided within the wall and encircling the first inlet, and a second inductive coil provided within the wall and encircling the second inlet. Additionally, the apparatus includes a first magnet array provided within the base end of the wall adjacent the first inlet, and a second magnet array provided within the terminal end of the wall adjacent the second inlet. A method of controlling plasma chemistry within a plasma processing apparatus is provided that includes the steps of providing a first magnetic field about a first injection region and providing a second magnetic field about a second injection region.

Abstract: A plasma antenna is provided having an ionizer, which when energized, generates a bounded or unbounded plasma column extending along a vertical axis. When ionization is initiated, the difference in the diffusion characteristics of ions and electrons and the resulting gas plasma produce a current pulse in a first direction. As the plasma extinguishes, the difference in relaxation times for the ions and electrons in the plasma produces a second current pulse of opposite direction. The alternating current pulses generate an electric field that radiates from the plasma column.

Abstract: A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are electrostatically confined in a deep energy well, created by tuning an externally applied magnetic field. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by the nuclear force, thus forming fusion products that emerge in the form of an annular beam. Energy is removed from the fusion product ions as they spiral past electrodes of an inverse cyclotron converter. Advantageously, the fusion fuel plasmas that can be used with the present confinement and energy conversion system include advanced (aneutronic) fuels.

Abstract: A plasma transport system uses a slow-wave power signal in external radio-frequency (RF) inductors to force plasmas to flow through ducts, such as from a plasma generator to a point of use. A magneto-hydrodynamic force is deliberately created by the RF inductors to displace plasma electrons down along the inside of the ductwork. A charge separation results that both drags the ions along and slows down the electrons with the ion drag. The consequence is that both electrons and ions are motivated down the ductwork and the overall plasma charge stays neutral. A directed stream of energetic ions and neutral gas atoms can be realized. The RF electric fields induced in the plasma tend to counteract any electron cooling and help maintains the plasma electron temperature enough to reduce later reionization power demands.

Abstract: An apparatus and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.

Abstract: A plasma generating method generates plasma in a treating chamber by controlling a high-frequency generating unit to generate a high-frequency signal and by feeding the high-frequency signal to the treating chamber through an impedance matching device. The plasma generating method includes controlling the impedance matching device, when the plasma is generated in the treating chamber, so as to satisfy a preset matching condition, and then controlling the high-frequency generating unit to generate and feed the high-frequency signal of the power generating the plasma, to the treating chamber.

Abstract: The present invention provides a magnetic neutral line plasma discharge processing system that makes it no longer necessary to use an insulator wall in the vacuum chamber and metal such as stainless steel may alternatively be used, while maintaining the features including both time/space and space controllability relative to the size and the location of low pressure, low temperature and high density plasma to be generated. Thus, the cost of the system can be reduced remarkably. As a result, the scope of application of discharge plasma systems can be broadened.

Abstract: A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.

Abstract: A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatically in a deep energy well, created by tuning an externally applied magnetic field. The simultaneous electrostatic confinement of electrons and magnetic confinement of ions avoids anomalous transport and facilitates classical containment of both electrons and ions. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by nuclear force, thus releasing fusion energy. Moreover, the fusion fuel plasmas that can be used with the present confinement system and method are not limited to neutronic fuels only, but also advantageously include advanced fuels.

Abstract: The invention pertains to the use of enhanced electron emitting surfaces to increase the supply of electrons in a thin film deposition system including the ion source in order to enhance the deposition rates of thin film materials. The use of enhanced electron emitting surfaces reduces the erosion of component parts in the ion source while increasing the rate and quality of the film deposited on the substrate. Allowing for ion source operation at lower gas pressure also increases the range of cold-cathode applications and improving operation at all pressures. The cathode section of the ion source is comprised of a reactive material that upon reaction with a reactive gas forms an insulating thin film on the cathode surface that provides an addition source of electrons for the ion beam source. Also, electron emitters located outside of the ion beam source have cathode sections that comprise enhanced electron emitting surfaces to provide electron flow to the ion beam.

Abstract: A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry.

Abstract: In an ion source, within a support body which supports a plasma production chamber for producing a plasma on the basis of an ion source flange, a cavity is provided ranging from a position near the plasma production chamber to a position near the ion source flange. The cavity serves as a cooling medium passage which introduces a cooling medium to a position near the plasma production chamber to cool the plasma production chamber. The plasma production chamber is cooled at a position very near it by the cooling medium. Therefore, temperature of the plasma production chamber at the time of plasma production is kept at low temperatures.

Abstract: The invention relates to a particle source, particularly an ion source for the production of excited particles in gaseous media. A dielectric, e.g., Kapton foil, is coated electrically conductively on both sides, and a voltage, preferably pulsed, is applied between the two coatings. A gas discharge is ignited in the gas through-flow by the voltage. Due to a pressure difference between the two sides of the foil, the gas expands from the high pressure side to the low pressure side, preferably in an ultrasonic expansion, whereby a directed, cold beam of excited particles or ions is produced.

Abstract: A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are electrostatically confined in a deep energy well, created by tuning an externally applied magnetic field. In this configuration, ions and electrons may have adequate density and temperature so that upon collisions they are fused together by the nuclear force, thus forming fusion products that emerge in the form of an annular beam. Energy is removed from the fusion product ions as they spiral past electrodes of an inverse cyclotron converter. Advantageously, the fusion fuel plasmas that can be used with the present confinement and energy conversion system include advanced (aneutronic) fuels.

Abstract: In accordance with one embodiment of the present invention, the ion-beam apparatus takes the form of an end-Hall ion source in which the detachable anode module incorporates the outer pole piece and includes an enclosure around the anode that both minimizes the loss of working gas and confines sputter contamination to the interior of this enclosure. This detachable anode module is substantially smaller than the entire end-Hall ion source, weighs substantially less, and can be duplicated for significantly less cost than the duplication of the entire ion source. In general, the components of the magnetic circuit determine the overall size, weight, and much of the cost of a gridless ion source. The reduced size, weight, and cost of the detachable anode module compared to the entire ion source is due to most of the magnetic circuit being excluded from the detachable module.

Abstract: A high-frequency power supply apparatus for a plasma generation apparatus having a modulator for generating an intermittent high-frequency output on the basis of a modulation reference signal and a peak value setting signal, the high-frequency power supply apparatus having: a first control loop for comparing the peak value of the intermittent high-frequency output detected by a peak value detector with a preset peak value of the high-frequency output so that the output controller controls the peak value of the high-frequency output to be the preset peak value; and a second control loop for calculating an average value of the intermittent high-frequency output based on the preset peak setting value and a preset duty ratio setting value and generating a modulation reference signal for controlling the modulator on the basis of the average value of the high-frequency output detected by a monitor and the average value of the high-frequency output.

Abstract: A microhollow cathode discharge (MHCD) cavity and microfluidic channel are combined for interrogation of samples. The apparatus includes a dielectric body and layers of conductive material defining a MHCD cavity containing an environment for carrying a gas discharge within the MHCD cavity. The gas discharge generates gas based electromagnetic waves. Electrical connections apply a cathode discharge potential to the layers of conductive material. A microfluidic channel is integrated on the substrate, and a path extends from the MHCD cavity laterally through a portion of the microfluidic channel. A detector, which may be integrated on the common substrate, is positioned to receive electromagnetic waves from the path and electronic circuitry is coupled to the detector for acquiring and processing data.

Abstract: A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber ceiling and a chamber side wall and a workpiece support pedestal within the chamber, a process gas conduit and gas distribution orifices facing the interior of the chamber and coupled to the process gas conduit, a conductive enclosure outside of the chamber and overlying the ceiling and having a conductive side wall with a bottom edge supported on the chamber ceiling and a conductive ceiling supported on a top edge of the conductive side wall, and a conductive post extending parallel with the conductive side wall from a center portion of the conductive ceiling toward the chamber ceiling. An RF power applicator of the reactor includes inner and outer conductive radial spokes. The set of inner conductive spokes extends radially outwardly from and is electrically connected to the conductive post toward the conductive side wall.

Abstract: An ion source called as a Bernas-type ion source is additionally provided with a positive electrode and a bias power source. The positive electrode is provided in a plasma production chamber and is electrically isolated therefrom. The positive electrode has three openings at least at both sides of a X direction along a magnetic field produced in a magnetic field generator and at a side of an ion extraction opening (a side of ion beam extraction direction). The bias power source applies a positive bias voltage to the positive electrode and to the plasma production chamber. With combination of constituent elements, the positive electrode serves to push back the ion in the plasma and further functions to suck a secondary electron in the plasma, thereby increase the rate of the multiply charged ion in the plasma.