Abstract: A remote plasma system having a self-management function measures an operating state of a remote plasma generator while a remote plasma generator operates, which generates plasma and remotely supplies the generated plasma to a process chamber, thereby allowing a process manager to check the measured operating state and performing a required process control depending on an operating state. According to the remote plasma system having the self-management function, it is possible to check operating state information of the remote plasma generator and plasma treatment process progress state information in the process chamber in real time so as to determine whether the remote plasma generator normally operates and immediately sense occurrence of an error during the operation.

Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.

Abstract: A plasma generation device, including: an ionization unit that ionizes gas in a target space; an electromagnetic wave oscillator that oscillates an electromagnetic wave to be radiated to the target space; and an antenna that radiates the electromagnetic wave supplied from the electromagnetic wave oscillator to a gas ionization region in which gas ionized by the ionization unit is provided. The ionization unit ionizes gas and the antenna radiates the electromagnetic wave thereto to generate plasma. A plurality of strong electric field regions are formed around the antenna when the electromagnetic wave is supplied from the electromagnetic wave oscillator. The strong electric field region is a region stronger in electric field than the surrounding area. The ionization unit ionizes gas around the plurality of strong electric field regions, or gas around a plurality of regions in which immediately before strong electric fields come into existence.

Abstract: Provided is an impedance matching apparatus for matching impedance to a plasma load. The impedance matching apparatus includes a first frequency impedance matching circuit unit that transfers an output of a first frequency RF power source unit, operating at a first frequency, to the plasma load; and a second frequency impedance matching circuit unit that transfers an output of a second frequency RF power source unit, operating at a second frequency higher than the first frequency, to the plasma load. The first frequency impedance matching circuit unit includes a T-type matching circuit, and the second frequency impedance matching circuit unit includes a standard L-type matching circuit or ?-type matching circuit.

Abstract: In some embodiments, the present disclosure relates to a plasma processing system that generates a magnetic field having a maximum strength that is independent of workpiece size. The plasma processing system has a plurality of side electromagnets that have a size which is independent of the workpiece size. The side electromagnets are located around a perimeter of a processing chamber configured to house a semiconductor workpiece. When a current is provided to the side electromagnets, separate magnetic fields emanate from separate positions around the workpiece. The separate magnetic fields contribute to the formation of an overall magnetic field that controls the distribution of plasma within the processing chamber. Because the size of the plurality of separate side magnets is independent of the workpiece size, the plurality of side magnets can generate a magnetic field having a maximum field strength that is independent of workpiece size.

Abstract: Disclosed herein are systems, methods and apparatuses for dissociating a non-activated gas through a disc-shaped plasma in a remote plasma source. Two inductive elements, one on either side of the disc-shaped plasma, generate a magnetic field that induces electric fields that sustain the disc-shaped plasma. The inductive elements can be coiled conductors having any number of loops and can be arranged in planar or vertical coils or a combination of planar and vertical coils. Additionally, the ratio of inductive element radius to gap distance between the two inductive elements can be configured to achieve a desired vertical plasma confinement.

Abstract: For driving at least two HF power generators that supply a plasma process with HF power, at least one drive signal is generated and at least one pulse signal is generated. Then, based on the at least one drive signal and the at least one pulse signal, a pulsed HF power signal is generated by each of the at least two HF power generator.

Abstract: A plasma device configured to receive ionizable media is disclosed. The plasma device includes a first pair of dielectric substrates each having an inner surface and an outer surface. The first pair of dielectric substrates is disposed in spaced, parallel relation relative to one another with the inner surfaces thereof facing one another. The device also includes a first pair of spiral coils each disposed on the inner surface of the dielectric substrates. The first pair of spiral coils is configured to couple to a power source and configured to inductively couple to an ionizable media passed therebetween to ignite the ionizable media to form a plasma effluent.

Abstract: Provided is a plasma generating device. The plasma generating device includes: an RF power supply providing an RF signal; a plasma chamber providing a space where gas is injected to generate plasma; a first electromagnetic inducer installed at one portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a second electromagnetic inducer installed at another portion of the plasma chamber and inducing an electromagnetic field in the plasma chamber as the RF signal is applied; a first load connected to the first electromagnetic inducer; a second load connected to the second electromagnetic inducer; and a controller controlling a power supplied to the first electromagnetic inducer and the second electromagnetic inducer by adjusting at least one impedance of the first load and the second load.

Abstract: A hybrid plasma reactor includes a first plasma chamber for providing a first ring-shaped plasma discharge space, second plasma chambers providing a second plasma discharge space connected to the first plasma discharge space and coupled to magnetic flux channels, a hybrid plasma source including magnetic cores, which partially surround the first plasma chamber and have magnetic entrances forming the magnetic flux channels, and primary winding coils wound in the magnetic cores and complexly generating ring-shaped transformer-coupled plasma in the first plasma discharge space and magnetic flux channel coupled plasma in the second plasma discharge space, and an AC switching power supply for supplying plasma generation power to the primary winding coils. The hybrid plasma reactor can complexly generate magnetic flux channel coupled plasma and transformer coupled plasma so that it has a high control capability for plasma ion energy and a wide operation region from a low-pressure region to a high-pressure region.

Abstract: A plasma reactor having multi discharging tubes is disclosed, through which activated gas containing ion, free radical, atom and molecule is generated through plasma discharging, and different process gases are injected into multi discharging tubes in which solid, power and gas, etc., are plasma-treated with the activated gas to perform processes including cleaning process for semiconductor, and a plasma state can be maintained even at low power.

Abstract: A demountable plasma torch assembly suitable for use in ICP spectrometry comprises a first tube having an inner diameter and a second tube disposed concentrically within the first tube, wherein the second tube has an outer diameter that is less than the inner diameter of the first tube. The first and second tubes are supported by a torch body. The torch body includes a first bore configured to receive an end of the first tube, a second bore configured to receive an end of the second tube, and a manifold disposed between the first bore and the second bore to receive a gas for injection between the first tube and the second tube. The manifold has an outer diameter at least substantially equal to the inner diameter of the first tube and an inner diameter at least substantially equal to the outer diameter of the second tube.

Abstract: An ignition system for a plasma jet ignition plug that enables a reduction in production cost and provides excellent ignition performance through improvement of plasma formation efficiency. The ignition system includes a plasma jet ignition plug having a center electrode, a ground electrode, and a cavity surrounding at least a portion of a gap formed between the center electrode and the ground electrode to form a discharge space, and a voltage application section for applying voltage across the gap. The ignition system further includes a capacitance section having a capacitance and provided in parallel with the plasma jet ignition plug between the plasma jet ignition plug and the voltage application section.

Abstract: A plasma processing systems having at least one plasma processing chamber, comprising a movable grounding component, an RF contact component configured to receive RF energy from an RF source when the RF source provides the RF energy to the RF contact component, and a ground contact component coupled to ground. The plasma processing system further includes an actuator operatively coupled to the movable grounding component for disposing the movable grounding component in a first position and a second position. The first position represents a position whereby the movable grounding component is not in contact with at least one of the RF contact component and the ground contact component. The second position represents a position whereby the movable grounding component is in contact with both the RF contact component and the ground contact component.

Abstract: An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.

Abstract: Certain embodiments described herein are directed to devices that can be used to sustain a low flow plasma. In certain examples, the low flow plasma can be sustained in a torch comprising an outer tube and an auxiliary tube within the outer tube. In some examples, the auxiliary tube comprises an effective length to match the shape of a low flow plasma sustained in the torch using a flat plate electrode. Methods and systems using the torches are also described.

Abstract: A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.

Abstract: An apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Methods of use of the apparatus in the practice of various processes are also provided by the present invention.

Abstract: The invention relates to a plasma source with an oscillator having an active element and a resonator connected to the active element. The resonator has a hollow body, a gas inlet, a gas outlet arranged at a distal end of the hollow body about a longitudinal axis of the hollow body, and a coil arranged along the longitudinal axis of the hollow body, said coil having an effective length of one quarter of a wavelength at a resonant frequency of the resonator. A distal end of the coil is arranged relative to the gas outlet such that a plasma section can form between the distal end of the coil serving as a first plasma electrode and the gas outlet of the hollow body serving as a second plasma electrode. At a proximal end of the hollow body, the coil is lead out of the interior of the hollow body through an electrically contact-free feed-through, and a proximal end of the coil contacts the hollow body at its external side.

Abstract: A physical vapor deposition system may include an RF generator configured to supply a pulsing AC process signal to a target in a physical vapor deposition chamber via the RF matching network. A detector circuit may be coupled to the RF generator and configured to sense the pulsing AC process signal and to produce a corresponding pulsing AC voltage magnitude signal and pulsing AC current magnitude signal. An envelope circuit may be electrically coupled to the detector circuit and configured to receive the pulsing AC voltage and current magnitude signals and to produce a DC voltage envelope signal and a DC current envelope signal. A controller may be electrically coupled to the envelope circuit and the RF matching network and configured to receive the DC voltage and current envelope signals and to vary an impedance of the RF matching network in response to the DC voltage and current envelope signals.

Abstract: A RF power supply system for delivering periodic RF power to a load. A power amplifier outputs a RF signal to the load. A sensor measures the RF signal provided to the load and outputs signals that vary in accordance with the RF signal. A first feedback loop enables control the RF signal based upon power determined in accordance with output from the sensor. A second feedback loop enables control the RF signal based upon energy measured in accordance with signals output from the sensor. Energy amplitude and duration provide control values for varying the RF signal. The control system and techniques are applicable to both pulsed RF power supplies and in various instances to continuous wave power supplies.

Abstract: Embodiments of the present invention generally provide a plasma source apparatus, and method of using the same, that is able to generate radicals and/or gas ions in a plasma generation region that is symmetrically positioned around a magnetic core element by use of an electromagnetic energy source. In general, the orientation and shape of the plasma generation region and magnetic core allows for the effective and uniform coupling of the delivered electromagnetic energy to a gas disposed in the plasma generation region. In general, the improved characteristics of the plasma formed in the plasma generation region is able to improve deposition, etching and/or cleaning processes performed on a substrate or a portion of a processing chamber that is disposed downstream of the plasma generation region.

Abstract: Apparatus for forming a magnetic field and methods of use thereof are provided herein. In some embodiments, a plurality of coils having substantially similar dimensions disposed about a process chamber in a symmetric pattern centered about a central axis of the process chamber, wherein the plurality of coils are configured to produce a magnetic field having a plurality of magnetic field lines that are substantially planar and substantially parallel. In some embodiments, the plurality of coils comprises eight coils disposed about the process chamber, wherein each of the eight coils is offset by an angle of about 45 degrees from respective adjacent coils of the eight coils.

Abstract: A method to modulate the density of an electron beam as it is emitted from a cathode, the method comprised of connecting a source of pulsed input power to the input end of a nonlinear transmission line and connecting the output end directly to the cathode of an electron beam diode by a direct electrical connection.

Abstract: Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma.

Abstract: A device for sustaining a plasma in a torch is provided. In certain examples, the device comprises a first electrode configured to couple to a power source and constructed and arranged to provide a loop current along a radial plane of the torch. In some examples, the radial plane of the torch is substantially perpendicular to a longitudinal axis of the torch.

Abstract: A plasma processing apparatus includes a processing chamber including a dielectric window; a coil-shaped RF antenna, provided outside the dielectric window; a substrate supporting unit provided in the processing chamber; a processing gas supply unit; an RF power supply unit for supplying an RF power to the RF antenna to generate a plasma of the processing gas by an inductive coupling in the processing chamber, the RF power having an appropriate frequency for RF discharge of the processing gas; a correction coil, provided at a position outside the processing chamber where the correction coil is to be coupled with the RF antenna by an electromagnetic induction, for controlling a plasma density distribution on the substrate in the processing chamber; a switching device provided in a loop of the correction coil; and a switching control unit for on-off controlling the switching device at a desired duty ratio by pulse width modulation.

Abstract: This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes.

Abstract: Provided is a plasma ignition technique allowing easy and reliable ignition and reignition of plasma without monitoring or manual handling. A plasma ignition system according to this technique is provided with a radio-frequency power supply configured to supply a predetermined high frequency signal to an applied electrode for generating plasma; a matching device configured to match impedance on a side of the radio-frequency power supply and impedance on a side of the applied electrode; a forward wave/reflected wave detector configured to detect a forward wave and a reflected wave of the high frequency signal; a high-voltage generator configured to generate a predetermined high voltage; and a controller configured to superimpose the high voltage on the high frequency signal when a ratio of the reflected wave to the forward wave is greater than a first threshold value.

Abstract: In accordance with one embodiment of the present invention, the dielectric discharge chamber of a generally axially symmetric ion source has a hollow cylindrical shape. One end of the discharge chamber is closed with a dielectric wall. The working gas is introduced through an aperture in the center of this wall. The ion-optics grids are at the other end of the discharge chamber, which is left open. The inductor is a helical coil of copper conductor that surrounds the cylindrical portion of the dielectric discharge chamber. The modification that produces uniformity about the axis of symmetry is a shorted turn of the helical-coil inductor at the end of the inductor closest to the ion-optics grids.

Abstract: A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. An apparatus includes a processing chamber, a surrounding member disposed around the processing chamber, an RF induction coil disposed outside the dielectric member, and an air-core coil for generating a direct-current magnetic field supplied to the inner space. The surrounding member seals an opening on top of the processing chamber to create an inner space, and the RF induction coil is above the top surface of the surrounding member.

Abstract: Described are methods and apparatuses, including computer program products, for igniting and/or sustaining a plasma in a reactive gas generator. Power is provided from an ignition power supply to a plasma ignition circuit. A pre-ignition signal of the plasma ignition circuit is measured. The power provided to the plasma ignition circuit is adjusted based on the measured pre-ignition signal and an adjustable pre-ignition control signal. The adjustable pre-ignition control signal is adjusted after a period of time has elapsed.

Abstract: A RF source and method are disclosed which inductively create a plasma within an enclosure without an electric field or with a significantly decreased creation of an electric field. A ferrite material with an insulated wire wrapped around its body is used to efficiently channel the magnetic field through the legs of the ferrite. This magnetic field, which flows between the legs of the ferrite can then be used to create and maintain a plasma. In one embodiment, these legs rest on a dielectric window, such that the magnetic field passes into the chamber. In another embodiment, the legs of the ferrite extend into the processing chamber, thereby further extending the magnetic field into the chamber. This ferrite can be used in conjunction with a PLAD chamber, or an ion source for a traditional beam line ion implantation system.

Abstract: A method for calibrating a high frequency measuring device so as to accurately measure plasma processing parameters within a chamber. A calibration parameter is calculated from a first set of three reference loads measured by a high frequency measurement device. A second calibration parameter is calculated from S parameters measured between a connection point where the high-frequency measuring device is connected and the inside of the chamber of a plasma processing device. A second set of three reference loads, which include the impedance previously calculated and encompass a range narrower than that encompassed by the first set of three reference loads, is measured with the reference loads in the chamber.

Abstract: An ion beam processing system includes a plasma generator with a magnetic flood system. Magnets are provided for reducing the transverse magnetic field in the ion beam transport region of the plasma flood device so as to control charging damage or to neutralize beam space charge in ion beam processing and semiconductor ion implantation. The system is especially adapted for beam lines with ribbon beams.

Abstract: A plasma generation apparatus includes a vacuum container, dielectrics connected to through-holes formed in the vacuum container, RF coils of the same structure disposed in the vicinity of the respective dielectrics and electrically connected in parallel, an RF power source to supply power to the RF coils, an impedance matching circuit disposed between the RF power source and the RF coils, and a power distribution unit disposed between the impedance matching circuit and one ends of the RF coils to distribute the power of the RF power source to the RF coils. The power distribution unit includes a power distribution line and a conductive outer cover enclosing the power distribution line. Distance between an input end of the power distribution unit and the RF coils are equal to each other, and the other ends of the RF coils are connected to the conductive outer cover to be grounded.

Abstract: There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract: A system for improving ion beam quality is disclosed. According to one embodiment, the system comprises an ion source, having a chamber defined by a plurality of chamber walls; an RF antenna disposed on a first wall of the plurality of chamber walls; a second wall, opposite the first wall, the distance between the first wall and the second wall defining the height of the chamber; an aperture disposed on one of the plurality of chamber walls; a first gas inlet for introducing a first source gas to the chamber; and a second gas inlet for introducing a second source gas, different from the first source gas, to the chamber; wherein a first distance from the first gas inlet to the second wall is less than 35% of the height; and a second distance from the second gas inlet to the first wall is less than 35% of the height.

Abstract: The present invention relates to the new structure antenna to create the uniform large area plasma using microwave. The microwave antenna to create the plasma of present invention comprises the waveguide, main body of antenna and the coaxial structure connecting part which connects said waveguide and said main body of antenna electrically, the main body of antenna comprises the conductive block in donut shape forming multiple slots, and notches are formed between the multiple slots of the conductive block and multiple permanent magnets are inserted into the notches. The multiple slots can be formed by passing through the inside and outside of the conductive block and the multiple slots can be formed with repetitive square wave pattern.

Abstract: A pair of coaxial electrodes 10 that face each other, a discharge-environment-maintaining device 20, and a voltage-applying device 30 are provided. Each coaxial electrode 10 includes a center electrode 12, a guide electrode 14 which surrounds the front end portion of the facing center electrode, and an insulation member 16 which insulates the center electrode and the guide electrode from each other. The insulation member 16 is formed of partially porous ceramics including an insulative dense portion 16a and a porous portion 16b. The insulative dense portion 16a includes a reservoir 18 which holds a plasma medium therein, and by the porous portion 16b, the inner surface of the reservoir 18 communicates with a gap between the center electrode 12 and the guide electrode 14 through the inside of the insulative dense portion 16a.

Abstract: A plasma reactor has an overhead multiple coil inductive plasma source with symmetric and radial RF feeds and cylindrical RF shielding around the symmetric and radial RF feeds. The radial RF feeds are symmetrically fed to the plasma source.

Abstract: A gas conversion system using microwave plasma is provided. The system includes: a microwave waveguide; a gas flow tube passing through a microwave waveguide and configured to transmit microwaves therethrough; a temperature controlling means for controlling a temperature of the microwave waveguide; a temperature sensor disposed near the gas flow tube and configured to measure a temperature of gas flow tube or microwave waveguide; an igniter located near the gas flow tube and configured to ignite a plasma inside the gas flow tube so that the plasma converts a gas flowing through the gas flow tube during operation; and a plasma detector located near the gas flow tube and configured to monitor the plasma.

Abstract: An openable gas passage provides for rapid pumpout of process or bake out gases in an inductively coupled plasma source in a charged particle beam system. A valve, typically positioned in the source electrode or part of the gas inlet, increases the gas conductance when opened to pump out the plasma chamber and closes during operation of the plasma source.

Abstract: Methods, systems, and computer program products are described for measuring and controlling parameters of a plasma generator. A current in a primary winding of a transformer or inductive element that generates a plasma is measured. A voltage across a secondary winding of the transformer or inductive element is measured. Based on the current of the primary winding and the voltage across the secondary winding, a parameter of the plasma is determined. The parameter includes a resistance value associated with the plasma, a power value associated with the plasma, or both.

Abstract: An iodine fueled plasma generator system includes a plasma generator. At least one storage vessel is configured to store condensed phase iodine therein. A heating device proximate to the storage vessel is configured to create iodine vapor from the condensed phase iodine. A propellant management subsystem is configured to deliver the iodine vapor to the plasma generator. A feedback control subsystem is responsive to one or more of plasma generator discharge current, the pressure of the iodine vapor, and/or the temperature of the iodine vapor configured to regulate the flow rate of the iodine vapor to the plasma generator.

Abstract: A microwave resonator for inductively generating a plasma (5) is introduced. The microwave resonator comprises a first tube (4) and a conductive, preferably metal, plate (1). The tube (4) is designed for connection to a supply device for a process gas and for conveying the process gas and comprises a dielectric material. The conductive plate (1) has a first, preferably cylindrical, hole (2), which extends from a first opening on a first side of the conductive plate (1) to a second opening on a second side, opposite the first side, of the conductive plate (1). The first tube (4) is arranged in the first hole (2). The conductive plate (1) also has a first slit (3), which is open towards the first and the second side of the conductive plate (1) and towards the first hole (2). The invention also introduces a plasma generator with such a microwave resonator.

Abstract: A microwave-excited plasma device is proposed. The device comprises of a plurality of microwave plasma reaction units which are capable of generating plasma independently such that a large-area plasma is able to be generated by all of the units. Besides, the high cost of the large-area microwave coupling window and its deformation together with possible breakage caused by atmospheric pressure can be prevented. Moreover, when a plurality of permanent magnets is assembled upon each of the plasma reaction units, the microwave-excited plasma device is improved to be a large-area electron cyclotron resonance (ECR) plasma device.

Abstract: A plasma excitation module including a chamber, a plurality of coils and a multi-duct gas intake system is provided. The chamber has a dielectric layer. The coils are disposed at an outer side of the dielectric layer, and the coils are separated from each other by an interval and in parallel connection. The multi-duct gas intake system surrounds the dielectric layer and is communicated with the chamber.

Abstract: An inductively coupled radio frequency plasma flood gun having a plasma chamber with one or more apertures, a gas source capable of supplying a gaseous substance to the plasma chamber, a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the gaseous substance in the plasma chamber to generate plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma and an exit aperture to enable negatively charged particles of the resulting plasma to engage an ion beam that is part of an associated ion implantation system. Magnets are disposed on opposite sides of the aperture used to manipulate the electrons of the plasma.