Induction Type Patents (Class 315/111.51)
  • Patent number: 7673583
    Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source has a segmented configuration with high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. An antenna for the source is provided having concentrated conductor segments through which current flows in one or more high efficiency portions that produce high magnetic fields that couple through the high-transparency shield segments into the chamber, while alternating low efficiency conductor segments permit magnetic fields to pass through or between the conductors and deliver only weak fields, which are aligned with opaque shield sections and couple insignificant energy to the plasma.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: March 9, 2010
    Assignee: Tokyo Electron Limited
    Inventor: Jozef Brcka
  • Patent number: 7659489
    Abstract: Plasma ignition and cooling apparatus and methods for plasma systems are described. An apparatus can include a vessel and at least one ignition electrode adjacent to the vessel. A total length of a dimension of the at least one ignition electrode is greater than 10% of a length of the vessel's channel. The apparatus can include a dielectric toroidal vessel, a heat sink having multiple segments urged toward the vessel by a spring-loaded mechanism, and a thermal interface between the vessel and the heat sink. A method can include providing a gas having a flow rate and a pressure and directing a portion of the flow rate of the gas into a vessel channel. The gas is ignited in the channel while the remaining portion of the flow rate is directed away from the channel.
    Type: Grant
    Filed: March 12, 2007
    Date of Patent: February 9, 2010
    Assignee: MKS Instruments, Inc.
    Inventors: William M. Holber, Xing Chen, Andrew B. Cowe, Matthew M. Besen, Ronald W. Collins, Jr., Susan C. Trulli, Shouquian Shao
  • Patent number: 7648611
    Abstract: A plasma etching system for etching, in particular anisotropic etching, of a substrate by using a plasma. The plasma etching system has a first plasma-generating device which is inductively coupled in particular and has a first arrangement for generating a first high-frequency electromagnetic alternating field, a first plasma-generating area for generating a first plasma and a first gas feed, as well as a first plasma-generating device downstream from a second plasma-generating device which is inductively coupled in particular and has a second arrangement for generating a second high-frequency electromagnetic alternating field, a second plasma-generating area for generating a second plasma and a second gas feed. The substrate to be etched is arranged in the first plasma-generating device. The second plasma is suppliable to the first plasma-generating device via the first gas feed at least partially as a first reactive gas.
    Type: Grant
    Filed: May 10, 2001
    Date of Patent: January 19, 2010
    Assignee: Robert Bosch GmbH
    Inventors: Franz Laermer, Andrea Schilp
  • Patent number: 7645999
    Abstract: An apparatus is provided for producing a plasma for a work surface, for example to deposit material thereon. The apparatus comprises an enclosure which contains an ionizable gas, a plurality of plasma excitation devices each of which is arranged to enable microwaves to travel from a first end thereof to a second end and radiate therefrom into the gas, and means for generating a magnetic field in the gas. A source of microwaves feeds microwaves to the first ends of the excitation devices. In use, regions exist within the said gas where the direction of the electric vector of the microwaves is non-parallel to the lines of the magnetic field, and the magnetic field has value B, and the microwaves have a frequency f such as to substantially satisfy the relationship: B=?mf D e where m and e are the mass and charge respectively of an electron.
    Type: Grant
    Filed: August 21, 2006
    Date of Patent: January 12, 2010
    Assignee: Dow Corning Corporation
    Inventors: Pierre Descamps, Patrick Leempoel
  • Patent number: 7635824
    Abstract: A plasma generating electrode of the invention present includes at least a pair of electrodes 5, at least one electrode 5a of the pair of electrodes 5 including a plate-like ceramic body 2 as a dielectric and a conductive film 3 disposed inside the ceramic plate 2 and having a plurality of through-holes 4 formed through the conductive film 3 in its thickness direction, the through-holes having a cross-sectional shape including an arc shape along a plane perpendicular to the thickness direction. The plasma generating electrode can generate uniform and stable plasma at low power consumption.
    Type: Grant
    Filed: June 18, 2004
    Date of Patent: December 22, 2009
    Assignees: NGK Insulators, Ltd., Honda Motor Co., Ltd.
    Inventors: Masanobu Miki, Kenji Dosaka, Yukio Miyairi, Yasumasa Fujioka, Masaaki Masuda, Takeshi Sakuma, Tatsuhiko Hatano
  • Patent number: 7634042
    Abstract: A pulsed power system has an inductive energy storage circuit (42) including a current source (43) and a plasma opening switch (44). The plasma opening switch has a transmission line (51, 52) coupling the current source to a load (41). The plasma opening switch changes from a closed state to an open state when a plasma discharge (45) in the plasma opening switch is driven by magnetic force from a first region along the transmission line to a second region towards the load. Electrical conductors (47, 48) are arranged for providing a stabilizing magnetic field configuration in the first region to magnetically latch the plasma discharge in the first region during charging of the inductive energy storage circuit, and current flowing along the transmission line from the current source to the load tends to disrupt the stabilizing magnetic field configuration and unlatch the plasma discharge from the first region and drive the plasma discharge toward the second region.
    Type: Grant
    Filed: March 23, 2005
    Date of Patent: December 15, 2009
    Inventor: Richard Auchterlonie
  • Patent number: 7633231
    Abstract: A device for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The device includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.
    Type: Grant
    Filed: February 27, 2008
    Date of Patent: December 15, 2009
    Assignee: Cold Plasma Medical Technologies, Inc.
    Inventor: Gregory A. Watson
  • Patent number: 7622693
    Abstract: Apparatus for synergistically combining a plasma with a comminution means such as a fluid kinetic energy mill (jet mill), preferably in a single reactor and/or in a single process step is provided by the present invention. Within the apparatus of the invention potential energy is converted into kinetic energy and subsequently into angular momentum by means of wave energy, for comminuting, reacting and separation of feed materials. Methods of use of the apparatus in the practice of various processes are also provided by the present invention.
    Type: Grant
    Filed: July 15, 2002
    Date of Patent: November 24, 2009
    Assignee: Foret Plasma Labs, LLC
    Inventor: Todd L. Foret
  • Patent number: 7619233
    Abstract: At least one exemplary embodiment is directed to a light source which includes a plasma generator configured to generate plasma, a mirror configured to reflect light that is produced by the plasma, a plurality of plates provided between the plasma and the mirror and arranged radially around an axis passing through a light emission center, and a magnetic-field generator for generating a magnetic line of force between the plasma and the mirror so that trajectories of charged particles scattering from the plasma are curved toward the plates.
    Type: Grant
    Filed: March 27, 2007
    Date of Patent: November 17, 2009
    Assignee: Canon Kabushiki Kaisha
    Inventor: Kazuki Fujimoto
  • Publication number: 20090278459
    Abstract: The plasma generator of our invention comprises of the induction coil which is symmetric with respect to the reference plane between two terminal ends. Plasma processing gas is supplied to a predetermined space, and high frequency electricity is supplied to the induction coil, thereby the plasma generator generates plasma in the space. The reference plane passes between the two terminal ends and through longitude axis of the induction coil. The plasma generator can generate plasma with high quality of homogeneous.
    Type: Application
    Filed: July 24, 2009
    Publication date: November 12, 2009
    Applicant: FOI CORPORATION
    Inventors: Georgy K. Vinogradov, Vladimir M. Menagarishvili, Tetsuhiko Shimamura, Masayuki Nakamura
  • Patent number: 7586099
    Abstract: A vacuum plasma generator (VPG) includes an output connector for electrical connection of the VPG to at least one electrode of a plasma chamber. The VPG includes a mains connector for connection of the VPG to a mains power supply, a mains input filter coupled to the mains connector, a voltage converter coupled to the mains input filter for generating an output signal, a voltage converter control input for connection to a voltage converter control, a shield that surrounds at least the voltage converter, the mains power supply, and the mains input filter, and a connection device that provides an electrical connection between the shield and the plasma chamber.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: September 8, 2009
    Assignee: HUETTINGER Elektronik GmbH + Co. KG
    Inventors: Thorsten Eyhorn, Moritz Nitschke, Peter Wiedemuth, Gerhard Zahringer
  • Publication number: 20090200949
    Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle.
    Type: Application
    Filed: September 24, 2007
    Publication date: August 13, 2009
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Jozef Brcka, Rodney Lee Robison
  • Patent number: 7572999
    Abstract: To provide an inductively-coupled plasma torch capable of realizing a GC analysis or the like and a solution analysis by the same torch without removing a capillary tube, etc. The injector tube of the inductively-coupled plasma torch includes an outer injector tube 11 for introducing an atomized solution sample or the like into the inductively-coupled plasma, and an inner injector tube 12 for introducing gaseous molecules into the inductively-coupled plasma, housed in the outer injector tube as integrated and coaxially with it. The inner injector tube is able to convey make-up gas, and has a capillary tube 4 for conveying gaseous molecules and carrier gas together. For sample introduction in analyzing a gaseous sample, the inner injector tube 12 is used, and for sample introduction in analyzing an aerosol sample, the outer injector tube 11 is used.
    Type: Grant
    Filed: July 19, 2005
    Date of Patent: August 11, 2009
    Assignees: National Institute of Advanced Industrial Science and Technology, Agilent Technologies, Inc.
    Inventors: Hiroaki Tao, Tetsuya Nakazato, Kenichi Sakata
  • Patent number: 7569791
    Abstract: An electromagnetic radiation source includes a toroidal chamber that contains an ionizable medium. The electromagnetic radiation source also includes a magnetic core that surrounds a portion of the toroidal chamber. The electromagnetic radiation source also includes a pulse power system for providing pulses of energy to the magnetic core for delivering power to a plasma formed in the toroidal chamber to produce electromagnetic radiation that radiates radially through walls of the toroidal chamber.
    Type: Grant
    Filed: September 27, 2006
    Date of Patent: August 4, 2009
    Assignee: Energetiq Technology, Inc.
    Inventors: Donald K. Smith, Matthew M. Besen, Raghuram L. V. Petluri
  • Patent number: 7567037
    Abstract: A high frequency power supplying device and a plasma generation device using the same includes: two or more inductive antennas; high frequency power sources, respectively supplying power to the antennas; and a vacuum chamber on which the antennas are provided so as to generate a plasma by inductive coupling with high frequency power, wherein each of the high frequency power sources is positioned close to a corresponding antenna. On this account, it is possible to reduce unevenness in high frequency voltages generated in the antennas. Thus, even when a diameter and a volume of the plasma generation section are made larger, it is possible to generate much more uniform plasma, thereby stabilizing (i) thin film formation processes based on the plasma and (ii) plasma ion implantation processes.
    Type: Grant
    Filed: January 15, 2004
    Date of Patent: July 28, 2009
    Assignee: Japan Science and Technology Agency
    Inventors: Yuichi Setsuhara, Tatsuo Shoji, Masayoshi Kamai
  • Patent number: 7544269
    Abstract: A plasma processing system including a plasma chamber (120) having a substrate holder (128) and a monitoring system (130). The monitoring system (130) includes a microwave mirror (140) having a concave surface (142) located opposite the holder (128) and a power source (160) is coupled thereto that produces a microwave signal perpendicular to a wafer plane (129) of the holder (128). A detector (170) is coupled to the mirror (140) and measures a vacuum resonance voltage of the signal within the chamber (120). A control system (180) is provided that measures a first voltage during a vacuum condition and a second voltage during a plasma condition and determines an electron density from a difference between the second voltage and the first voltage. The processing system (110) can include a plurality of monitoring systems (130a, 130b, 130c) having mirrors (140a, 140b, 140c) provided in a spatial array located opposite the substrate holder (128).
    Type: Grant
    Filed: October 24, 2002
    Date of Patent: June 9, 2009
    Assignee: Tokyo Electron Limited
    Inventor: Eric J. Strang
  • Patent number: 7527713
    Abstract: A quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor, preferably in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the gas sputtering the wafer. The coil array may include a tubular magnetic core, particularly useful for suppressing stray fields. A water cooling coil may be wrapped around the coil array to cool all the coils. The electromagnets can be powered in different relative polarities in a multi-step process.
    Type: Grant
    Filed: September 23, 2004
    Date of Patent: May 5, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Tza-Jing Gung, Mark A. Perrin, Andrew Gillard
  • Patent number: 7514875
    Abstract: An inductively coupling plasma source having a primary winding powered directly from a radio frequency source and a quasi-closed O-type ferrite core comprised of two equal U-shaped core halves separated from one another to form two operating gaps between aligned spaced ends of the core halves with the quasi-closed ferrite core disposed in the primary winding. A metallic housing is provided having a discharge chamber therein and two opposed walls with symmetrically opposed bone-shaped ports, wherein the ports are closed and vacuum sealed with insulating material and each is provided with two side openings dimensionally respectively fitted to and engaged with the spaced ends of the quasi-closed ferrite core, and a through slot connecting the side openings along their centerline for inductive excitation and maintenance of plasma in the operating gaps positioned within the discharged chamber.
    Type: Grant
    Filed: December 1, 2006
    Date of Patent: April 7, 2009
    Inventor: Evgeny V. Shun'ko
  • Patent number: 7511246
    Abstract: A device for sustaining a plasma in a torch is provided. In certain examples, the device comprises a first electrode configured to couple to a power source and constructed and arranged to provide a loop current along a radial plane of the torch. In some examples, the radial plane of the torch is substantially perpendicular to a longitudinal axis of the torch.
    Type: Grant
    Filed: September 2, 2005
    Date of Patent: March 31, 2009
    Assignee: Perkinelmer Las Inc.
    Inventor: Peter J. Morrisroe
  • Patent number: 7501599
    Abstract: A process and apparatus for the synthesis of metal oxide nanopowder from a metal compound vapour is presented. In particular a process and apparatus for the synthesis of TiO2 nanopowder from TiCl4 is disclosed. The metal compound vapour is reacted with an oxidizing gas in electrically induced RF frequency plasma thus forming a metal oxide vapour. The metal oxide vapour is rapidly cooled using a highly turbulent gas quench zone which quickly halts the particle growth process, yielding a substantial reduction in the size of metal oxide particles formed compared with known processes. The metal compound vapour can also react with a doping agent to create a doped metal oxide nanopowder. Additionally, a process and apparatus for the inline synthesis of a coated metal oxide is disclosed wherein the metal oxide particles are coated with a surface agent after being cooled in a highly turbulent gas quench zone.
    Type: Grant
    Filed: March 25, 2005
    Date of Patent: March 10, 2009
    Assignee: Tekna Plasma Systems, Inc.
    Inventors: Maher I. Boulos, Jerzy W. Jurewicz, Christine A. Abdel Messih Nessim
  • Patent number: 7501600
    Abstract: Plasma ignition and cooling apparatus and methods for plasma systems are described. An apparatus can include a vessel and at least one ignition electrode adjacent to the vessel. A total length of a dimension of the at least one ignition electrode is greater than 10% of a length of the vessel's channel. The apparatus can include a dielectric toroidal vessel, a heat sink having multiple segments urged toward the vessel by a spring-loaded mechanism, and a thermal interface between the vessel and the heat sink. A method can include providing a gas having a flow rate and a pressure and directing a portion of the flow rate of the gas into a vessel channel. The gas is ignited in the channel while the remaining portion of the flow rate is directed away from the channel.
    Type: Grant
    Filed: February 15, 2005
    Date of Patent: March 10, 2009
    Assignee: MKS Instruments, Inc.
    Inventors: William M. Holber, Xing Chen, Andrew B. Cowe, Matthew M. Besen, Ronald W. Collins, Jr., Susan C. Trulli, Shouqian Shao
  • Publication number: 20090015165
    Abstract: A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.
    Type: Application
    Filed: May 1, 2008
    Publication date: January 15, 2009
    Applicant: Samsung Eletronics Co., Ltd.
    Inventors: Sang Jean Jeon, Yuri Tolmachev, Su Ho Lee, Seoung Hyun Seok, Young Min Park, Won Hyuk Jang
  • Publication number: 20090012589
    Abstract: A device for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The device includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.
    Type: Application
    Filed: February 27, 2008
    Publication date: January 8, 2009
    Applicant: COLD PLASMA MEDICAL TECHNOLOGIES, INC.
    Inventor: Gregory A. Watson
  • Publication number: 20080309242
    Abstract: A plasma source is described. The source includes a reactive impedance element formed from a plurality of electrodes. By providing such a plurality of electrodes and powering adjacent electrodes out of phase with one another, it is possible to improve the characteristics of the plasma generated.
    Type: Application
    Filed: May 11, 2006
    Publication date: December 18, 2008
    Applicant: DUBLIN CITY UNIVERSITY
    Inventor: Albert Rogers Ellingboe
  • Publication number: 20080265780
    Abstract: A plasma generating apparatus includes a plurality of discharge cells in which a gas is excited by a high frequency excitation signal produced at an inverter. Each of a plurality of transformers couples the excitation signal from the inverter to one of the discharge cells, thereby forming a separate resonant circuit that has a resonant frequency. A gap in the transformer core creates a stray magnetic field outside the transformer. The plurality of transformers are in close proximity to each other so that the stray magnetic field from one transformer is coupled to at least one other transformer. Coupling the stray magnetic fields between transformers results in each resonant circuit resonating at the same frequency, thereby compensating for manufacturing tolerances and changes in operating conditions of the discharge cells that otherwise affect the resonant frequency of a given circuit.
    Type: Application
    Filed: April 27, 2007
    Publication date: October 30, 2008
    Inventor: Ralph M. Francis
  • Patent number: 7426900
    Abstract: An integrated electrostatic inductively-coupled (i-ESIC) device is provided for plasma processing that may be used as a primary or secondary source for generating a plasma to prepare substrates for, and to process substrates by applying, dielectric and conductive coatings. The i-ESIC device is practical for processing advanced semiconductor devices and integrated circuits that require uniform and dense plasma. The invention may be embodied in an apparatus that contains a substrate support, typically including an electrostatic chuck, that controls ion energy by capacitively coupling RF power to the plasma and generating voltage bias on the wafer relative to the plasma potential. An integrated inductive coupling element is provided at the perimeter of the substrate support that increases plasma density at the perimeter of the wafer, compensating for the radial loss of charged particles toward chamber walls, to produce uniform plasma density above the processed wafer.
    Type: Grant
    Filed: November 19, 2003
    Date of Patent: September 23, 2008
    Assignee: Tokyo Electron Limited
    Inventor: Jozef Brcka
  • Patent number: 7420182
    Abstract: This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces a gas into the plasma accelerator. A cathode emits electrons attracted to the anode for ionizing the gas and neutralizing ion flux emitted from the plasma accelerator. An electrical circuit coupled between the anode and the cathode having a DC power source provides DC voltage. A magnetic circuit structure including a magnetic field source establishes a transverse magnetic field in the plasma accelerator that creates an impedance to the flow of the electrons toward the anode to enhance ionization of the gas to create plasma and which in combination with the electric circuit establishes an axial electric field in the plasma accelerator.
    Type: Grant
    Filed: April 27, 2006
    Date of Patent: September 2, 2008
    Assignee: Busek Company
    Inventors: Vladimir Hruby, Kurt Hohman, Thomas Brogan
  • Patent number: 7399943
    Abstract: A plasma reactor includes a vacuum chamber including a sidewall, a ceiling and a wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber. A process gas inlet is coupled to the chamber and a process gas source coupled to the process gas inlet. The reactor further includes a metal sputter target at the ceiling, a high voltage D.C. source coupled to the sputter target, an RF plasma source power generator coupled to the wafer support pedestal and having a frequency suitable for exciting kinetic electrons, and an RF plasma bias power generator coupled to the wafer support pedestal and having a frequency suitable for coupling energy to plasma ions.
    Type: Grant
    Filed: February 3, 2005
    Date of Patent: July 15, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Karl M. Brown, John Pipitone, Vineet Mehta
  • Patent number: 7399944
    Abstract: The present invention is directed to a method and arrangement for controlling a glow discharge plasma in a gas or gas mixture under atmospheric conditions, in a plasma discharge space comprising at least two spaced electrodes in which at least one plasma pulse having an absolute pulse maximum is generated by applying an AC plasma energizing voltage to the electrodes causing a plasma current and a displacement current. The plasma is controlled by providing a relative decrease of the displacement current after the pulse maximum. In a preferred embodiment, the energizing voltage is applied through a series circuit including a choke coil and a non-saturable inductor.
    Type: Grant
    Filed: August 12, 2005
    Date of Patent: July 15, 2008
    Assignee: Fuji Photo Film B.V.
    Inventors: Hindrik Willem DeVries, Yoichiro Kamiyama, Jan Bastiaan Bouwstra, Mauritius Cornelius Maria Van de Sanden, Eugen Aldea, Paul Peeters
  • Publication number: 20080088242
    Abstract: The present invention pertains to RF (radio frequency) inductive coupling plasma (ICP) sources exciting and maintaining plasma within a closed and vacuum sealed discharge chamber filled with a gaseous medium at a controllable pressure in the range of from 1 mTorr to atmospheric pressure. The discharge chamber has two opposite walls equipped symmetrically with opposed bone-shape ports (each comprising two through side openings and a through slot connecting them which are closed and vacuum sealed with insulating material) in which is inserted in two operating gaps formed between two equal U-shaped parts of a closed O-type ferrite core (hereinafter referred to as a quasi-closed ferrite core). The ends of the U-shaped parts are fit to the corresponding side openings of the bone-shaped ports.
    Type: Application
    Filed: December 1, 2006
    Publication date: April 17, 2008
    Inventor: Evgeny V. Shun'ko
  • Patent number: 7345429
    Abstract: Methods and apparatus for generating strongly-ionized plasmas are disclosed. A strongly-ionized plasma generator according to one embodiment includes a chamber for confining a feed gas. An anode and a cathode assembly are positioned inside the chamber. A pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply generates a multi-stage voltage pulse that includes a low-power stage with a first peak voltage having a magnitude and a rise time that is sufficient to generate a weakly-ionized plasma from the feed gas. The multi-stage voltage pulse also includes a transient stage with a second peak voltage having a magnitude and a rise time that is sufficient to shift an electron energy distribution in the weakly-ionized plasma to higher energies that increase an ionization rate which results in a rapid increase in electron density and a formation of a strongly-ionized plasma.
    Type: Grant
    Filed: March 15, 2006
    Date of Patent: March 18, 2008
    Assignee: Zond, Inc.
    Inventor: Roman Chistyakov
  • Patent number: 7323655
    Abstract: Disclosed herein is a high-frequency induction plasma reactor apparatus for producing nano-powder, which is configured to continuously manufacture nano-powder in large quantities using solid-phase powder as a starting raw material and to manufacture high-purity nano-powder by completely vaporizing the material powder. The high-frequency induction plasma reactor apparatus comprises an upper body and a cover. The upper body is provided with a reaction pipe receiving a reactor extending vertically inside thereof, a high-frequency coil surrounding the outer periphery of the reaction pipe and a ceramic inner wall provided inside the reaction pipe. The ceramic inner wall is formed with a plurality of gas passing bores and defines a gas movement passage with the inner side wall of the reaction pipe therebetween for allowing the inflow of argon gas from the outside into the reactor. The cover is mounted to the upper end of the reactor and adapted to seal the reactor.
    Type: Grant
    Filed: February 25, 2003
    Date of Patent: January 29, 2008
    Assignee: Nano Plasma Center Co., Ltd.
    Inventor: Young-nam Kim
  • Patent number: 7319295
    Abstract: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode.
    Type: Grant
    Filed: March 13, 2003
    Date of Patent: January 15, 2008
    Assignee: Mitsubishi Heavy Industries, Ltd.
    Inventors: Hiroshi Mashima, Keisuke Kawamura, Akemi Takano, Yoshiaki Takeuchi, Tetsuro Shigemizu, Tatsufumi Aoi
  • Patent number: 7309961
    Abstract: A plasma accelerator (300) is disclosed that has three separate sections of coils (301-316) disposed outside the plasma chamber (321). The separate sections of coils include an initial discharge section (309-316), an acceleration section (303-308), and a nozzle section (301-302). Each section of coils is driven by signals of a different frequency to more efficiently discharge and accelerate a plasma in the plasma accelerator (300).
    Type: Grant
    Filed: November 16, 2005
    Date of Patent: December 18, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Won-taek Park, Vladimir Volynets
  • Patent number: 7298091
    Abstract: A compact matching network couples an RF power supply to an RF antenna in a plasma generator. The simple and compact impedance matching network matches the plasma load to the impedance of a coaxial transmission line and the output impedance of an RF amplifier at radio frequencies. The matching network is formed of a resonantly tuned circuit formed of a variable capacitor and an inductor in a series resonance configuration, and a ferrite core transformer coupled to the resonantly tuned circuit. This matching network is compact enough to fit in existing compact focused ion beam systems.
    Type: Grant
    Filed: February 1, 2002
    Date of Patent: November 20, 2007
    Assignee: The Regents of the University of California
    Inventors: Daniel S. Pickard, Ka-Ngo Leung
  • Patent number: 7271363
    Abstract: Portable microwave plasma systems including supply lines for providing microwaves and gas flow are disclosed. The supply line includes at least one gas line or conduit and a microwave coaxial cable. A portable microwave plasma system includes a microwave source, a waveguide-to-coax adapter and a waveguide that interconnects the microwave source with the waveguide-to-coax adapter, a portable discharge unit and the supply line. The portable discharge unit includes a gas flow tube coupled to the supply line to receive gas flow and a rod-shaped conductor that is axially disposed in the gas flow tube and has an end configured to receive microwaves from the microwave coaxial cable and a tapered tip positioned adjacent the outlet portion of the gas flow tube. The tapered tip is configured to focus microwave traveling through the rod-shaped conductor and generate plasma from the gas flow.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: September 18, 2007
    Assignees: Noritsu Koki Co., Ltd., Amarante Technologies, Inc.
    Inventors: Sang Hun Lee, Jay Joongsoo Kim, Togo Kinoshita
  • Patent number: 7255062
    Abstract: A pseudo surface microwave produced plasma shielding system is a simple device that creates a prescribed plasma environment with a prescribed plasma density gradient, and protects an object surrounded by this environment as a shield. Pseudo surface microwaves interacting with an artificial intelligence equipped on board are used to create and to adjust this plasma environment for a particular application. This plasma environment provides potential capabilities of military applications of the plasma in the system. Examples of military applications include a stealth system from RADAR and SONAR, a protection system from WMD, and a weapon system to generate and launch plasmoids as a plasma gun. The scope of this invention extends to commercial applications of this plasma shielding system as a conditioned and controlled flow field, for example, a boundary layer and turbulence control system, and a lift control system to improve flight performance and flight economy of aircrafts.
    Type: Grant
    Filed: May 9, 2005
    Date of Patent: August 14, 2007
    Inventor: Kumiko I. Higman
  • Patent number: 7247992
    Abstract: For an ion accelerator system having a special magnetic field structure with an alternating predominantly longitudinal and crosswise progression of the magnetic field, a geometry of the ionization chamber having a non-cylindrical shape of the chamber wall that is adapted to the progression of the magnetic field is proposed.
    Type: Grant
    Filed: December 13, 2003
    Date of Patent: July 24, 2007
    Assignee: Thales Electron Devices GmbH
    Inventors: Günter Kornfeld, Gregory Coustou, Norbert Koch
  • Patent number: 7245084
    Abstract: An apparatus includes a vacuum chamber, an electrical transformer that surrounds the vacuum chamber to induce an electromagnetic field within the vacuum chamber, and an ignition circuit. The electrical transformer induces an electromagnetic field within the vacuum chamber. The transformer includes a primary winding and a plasma loop coupled to the vacuum chamber to perform as a secondary winding. The ignition circuit is coupled to an ignition core section of the vacuum chamber to ignite the vacuum chamber.
    Type: Grant
    Filed: September 29, 2004
    Date of Patent: July 17, 2007
    Assignee: Advanced Energy Industries, Inc.
    Inventors: Juan Jose Gonzalez, Andrew Shabalin, Steven J. Geissler, Fernando Gustavo Tomasel
  • Patent number: 7230201
    Abstract: Among the embodiments of the present invention, are apparatus, systems, and methods for managing energetic charged particles emitted nearly isotropically from a fusion device. One apparatus of the present invention includes a fusion device in a container and an electric current carrying winding disposed about the container to provide a magnetic field to direct charged particles generated by the device. A pair of electric current carrying coils are positioned within the container to control the strength of the magnetic field in a region between these coils, such that effects on fusion plasma can be minimized. In other forms, charged particles provided from a fusion device are directed along a magnetic channel to an energy converter to provide electric power. One such form includes a magnetic expander and an electron-ion separator to provide a net electric current.
    Type: Grant
    Filed: June 24, 2003
    Date of Patent: June 12, 2007
    Assignee: NPL Associates
    Inventors: George Miley, Hiromu Momota
  • Patent number: 7217903
    Abstract: A method is provided for purifying gases, particularly gases contaminated by environmentally harmful substances, by way of plasma discharge. The gas to be purified is guided through a thermal plasma, which is generated by electrodeless ignition of a process gas, so that, by way of the thermal plasma, the harmful substances contained in the gas to be purified are converted to environmentally neutral, fully oxidized substances.
    Type: Grant
    Filed: November 29, 2002
    Date of Patent: May 15, 2007
    Assignee: MTU Aero Engines GmbH
    Inventors: Erwin Bayer, Joerg Hoeschele, Juergen Steinwandel
  • Patent number: 7214934
    Abstract: A RF power generator for exciting inductively coupled plasma for spectrometry includes an induction coil for exciting the plasma as part of its load circuit. The load circuit also comprises a capacitor connected in parallel with the induction coil. The RF power generator is a free running oscillator having a switching circuit of two MOSFETs alternately switchable on and off via a feedback control circuit from the load circuit. RF power from the switching circuit is coupled to the load circuit via an inductor. The inductor and load circuit is resonant at a first frequency, which is lower than the operating frequency of the power generator.
    Type: Grant
    Filed: July 21, 2005
    Date of Patent: May 8, 2007
    Assignee: Varian Australia Pty Ltd
    Inventor: Hugh Charles Stevenson
  • Patent number: 7204921
    Abstract: A vacuum apparatus which can easily regenerate plasma is provided. A matching box used in the vacuum apparatus can vary the impedance thereof by varying the magnitudes of the inductance of variable inductance elements. Controlling the magnitude of direct current makes it possible to control the magnitudes of inductance of the variable inductance elements so that it is possible to carry out matching operation at high speed.
    Type: Grant
    Filed: September 9, 2003
    Date of Patent: April 17, 2007
    Assignee: ULVAC Inc.
    Inventors: Taro Yajima, Minoru Akaishi, Yoshikuni Horishita
  • Patent number: 7196283
    Abstract: An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top portion of the electrode and plural pressure-dropping cylindrical orifices extending axially relative to the electrode from the gas supply manifold at one end of each the orifice. A radial gas distribution manifold within the electrode extends radially across the electrode. Plural axially extending high conductance gas flow passages couple the opposite ends of respective ones of the plural pressure-dropping orifices to the radial gas distribution manifold. Plural high conductance cylindrical gas outlet holes are formed in the plasma-facing bottom surface of the electrode and extend axially to the radial gas distribution manifold.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: March 27, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Douglas A. Buchberger, Jr., Daniel J. Hoffman, Olga Regelman, James Carducci, Keiji Horioka, Jang Gyoo Yang
  • Patent number: 7193369
    Abstract: A method for generating a plasma. A gas flows along a flow path having the displacement identical to the lines of magnetic force of the main magnetic field, and high frequency alternating current is applied to the gas, thereby generating a gas plasma. For example, a gas is flowed through a pipe in a first direction. Electricity is conducted through the pipe in substantially the first direction. And a magnetic field is applied along a second direction (e.g., perpendicular to the first direction) to the gas flowing in the pipe such that a plasma is induced in the pipe.
    Type: Grant
    Filed: February 20, 2003
    Date of Patent: March 20, 2007
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Young-Min Min, Dae-Kyu Choi, Do-In Bae, Yun-Sik Yang, Wan-Goo Hwang, Jin-Man Kim
  • Patent number: 7190119
    Abstract: An arrangement for processing a semiconductor substrate in a plasma processing system is disclosed. The arrangement includes providing a RF coupling structure having a first terminal and a second terminal, the first terminal being coupled with a first electrical measuring device, the second terminal being coupled with a second electrical measuring device. The arrangement also includes coupling a compensating circuit to the second terminal. The arrangement further includes providing a feedback circuit coupled to receive information from the first electrical measuring device and the second electrical measuring device, an output of the feedback circuit being employed to control the compensating circuit in order to keep a ratio between a first electrical value at the first terminal and a second electrical value at the second terminal substantially at a predefined value.
    Type: Grant
    Filed: November 7, 2003
    Date of Patent: March 13, 2007
    Assignee: Lam Research Corporation
    Inventors: Roger Patrick, Brett Richardson, Norman Williams
  • Patent number: 7189939
    Abstract: A portable microwave plasma discharge unit receives microwaves and a gas flow via a supply line. The portable microwave plasma discharge unit generates plasma from the gas flow and the received microwaves. The portable microwave plasma discharge unit includes a gas flow tube made of a conducting and/or dielectric material and a rod-shaped conductor that is axially disposed in the gas flow tube. The rod-shaped conductor has an end configured to contact a microwave supply conductor of the supply line to receive microwaves and a tapered tip positioned adjacent the outlet portion of the gas flow tube. The tapered tip is configured to focus the microwaves received from the microwave supply conductor to generate plasma from the gas flow.
    Type: Grant
    Filed: September 1, 2004
    Date of Patent: March 13, 2007
    Assignees: Noritsu Koki Co., Ltd., Amarante Technologies, Inc.
    Inventors: Sang Hun Lee, Jay Joongsoo Kim
  • Patent number: 7183717
    Abstract: An apparatus for producing light includes a chamber that has a plasma discharge region and that contains an ionizable medium. The apparatus also includes a magnetic core that surrounds a portion of the plasma discharge region. The apparatus also includes a pulse power system for providing at least one pulse of energy to the magnetic core for delivering power to a plasma formed in the plasma discharge region. The plasma has a localized high intensity zone.
    Type: Grant
    Filed: July 9, 2004
    Date of Patent: February 27, 2007
    Assignee: Energetiq Technology Inc.
    Inventors: Donald K. Smith, Stephen F. Horne, Matthew M. Besen, Paul A. Blackborow
  • Patent number: 7183716
    Abstract: A charged particle source utilizes a novel plasma processing chamber, RF coil and ion optics, to achieve high uniformity. The plasma processing chamber has a re-entrant vessel which is movable, and which includes extensions of adjustable shape or position, to make more uniform the plasma contained within the chamber. One or more magnets, which may be static or moving, may be included within the re-entrant vessel. The ion optics include a grid with a number of apertures, and tuning features each surrounding an aperture. These tuning features either reduce the diameter of the associated aperture, or increase the length of that aperture, to create more uniform beamlets emerging from the grid. The RF coil includes a flux concentrator positioned adjacent to the winding in at least one angular region thereof to tune the magnetic field produced thereby.
    Type: Grant
    Filed: February 4, 2004
    Date of Patent: February 27, 2007
    Assignee: Veeco Instruments, Inc.
    Inventors: Viktor Kanarov, Alan V. Hayes, Rustam Yevtukhov, Ira Reiss, Roger P. Fremgen, Jr., Adrian Celaru, Kurt E. Williams, Carlos Fernando de Mello Borges, Boris L. Druz, Renga Rajan, Hari Hegde
  • Patent number: 7180243
    Abstract: The closed electron drift plasma accelerator comprises an annular ionization chamber, an acceleration chamber on the same axis as the ionization chamber, an annular anode, a hollow cathode, a first DC voltage source, an annular gas manifold, a magnetic circuit, and magnetic field generators. A coaxial annular coil is placed in the cavity of the ionization chamber, is provided with bias conductive cladding connected, together with the electrically-conductive material of the inside faces of the walls of the ionization chamber, to the positive pole of a second voltage source whose negative pole is connected to the anode, and constitutes an additional magnetic field generator which, together with the other magnetic field generators, forms a magnetic field having a magnetic line of force with an “X” point corresponding to a magnetic field zero situated between the coaxial annular coil and the anode.
    Type: Grant
    Filed: July 8, 2004
    Date of Patent: February 20, 2007
    Assignee: SNECMA Moteurs
    Inventors: Olivier Secheresse, Antonina Bougrova, Alexei Morozov