Abstract: Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma.

Abstract: A linear actuator comprised of an actuator body having a first portion and a second portion, each arranged along a longitudinal axis of the actuator body. A vacuum bellows is concentrically located in the first portion and is configured to seal a vacuum environment from the second portion. A linear motion shaft is concentrically located substantially within the actuator body and is configured to move in a linear direction along the longitudinal axis. An electrically conductive portion of the shaft is concentrically located substantially within the vacuum bellows and electrically insulated therefrom and is configured to receive and conduct a signal. A lift force generating portion of the shaft is concentrically located substantially within the second portion. An electrical contact pad is electrically coupled to the conductive portion of the shaft and is configured to couple the signal to another surface upon activation of the shaft.

Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing inductively coupled plasma production is disclosed. As opposed to conventional ICP sources, the present disclosure describes an ICP source which is not cylindrical. Rather, the source is defined such that its width, which is the dimension along which the beam is extracted, is greater than its height. The depth of the source may be defined to maximize energy transfer from the antenna to the plasma. In a further embodiment, a multicusp magnetic field surrounding the ICP source is used to further increase the current density and improve the uniformity of the extracted ion beam. Ion beam uniformity can also be controlled by means of several independent controls, including gas flow rate, and input RF power.

Abstract: The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam.

Abstract: A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including an inductive antenna inductively coupled to plasma formed in the plasma discharge space and a primary winding coil transformer coupled to the plasma and wound in a magnetic core; and an alternating switching power supply for supplying plasma generation power to the inductive antenna and the primary winding coil. The hybrid plasma reactor induces a plasma discharge using the inductively coupled plasma source and the transformer coupled plasma source, so that it has a wide operational area from a low pressure area to a high pressure area.

Abstract: A plasma generating system, related method and device are disclosed. The plasma generation system includes a plasma generation device, a source of ionizable gas and a driver network. The plasma generation device includes a housing, an electrode, and a resonant circuit. The housing includes a passage defined therein and directs a flow of ionizable gas therethrough. The electrode is coupled to the ionizable gas flowing through the passage of the housing. The resonant circuit includes a capacitor and an inductor connected together in series. The resonant circuit has a resonance frequency and is coupled to the electrode. The resonant circuit receives an AC signal. The driver network provides the AC signal such that the AC signal has a frequency and excites the ionizable gas flowing through the passage of the housing to a plasma.

Abstract: Accelerated charged particles are provided by inductive amplification of particle energy in connection with a deflagration-mode plasma discharge. The deflagration mode discharge tends to increase particle energy relative to other operating modes. Inductive amplification of particle energy further increases output particle velocity. Inductive amplification can occur by formation of a current loop in the plasma discharge, and/or by a sudden increase in inductance due to collapse of the current distribution of the plasma discharge. Applications include particle therapy and production of radio-isotopes.

Abstract: A plasma processing apparatus, for performing a plasma processing on a target substrate by generating an inductively coupled plasma of a processing gas in a depressurized processing chamber, includes: a mounting table; a gas supply unit; a gas exhaust unit; a planar high frequency antenna disposed opposite to the mounting table with a plate-shaped dielectric member therebetween and a shield member covering the high frequency antenna. The high frequency antenna includes an inner antenna element provided at a central portion of a region above the plate-shaped dielectric member and an outer antenna element provided at an edge portion to surround a periphery of the inner antenna element. Further, two ends of each of the antenna elements are open ends and the antenna elements are grounded at central points thereof or points close thereto to resonate at ½ wavelengths of high frequencies from individual high frequency power supplies.

Abstract: A plasma processing system for processing a substrate is described. The plasma processing system includes a bottom piece including a chuck configured for holding the substrate. The plasma processing system also includes an induction coil configured to generate an electromagnetic field in order to create a plasma for processing the substrate. The plasma processing system also includes a cover covering at least the induction coil and a heating and cooling system.

Abstract: Various apparatuses and methods for a vacuum electronic device are disclosed herein. In one embodiment, a vacuum electronic device includes a vacuum housing, an array of slow wave structures inside the vacuum housing sharing a common electron beam tunnel, an electron beam input port at a first end of the common electron beam tunnel, and an electron beam output port at a second end of the common electron beam tunnel.

Abstract: [Object] To provide a radical generator which can produce radicals at higher density. [Means for Solution] The radical generator includes a supply tube 10 made of SUS, a hollow cylindrical plasma-generating tube 11 which is connected to the supply tube 10 and which is made of pyrolytic boron nitride (PBN). A cylindrical CCP electrode 13 is disposed outside the plasma-generating tube 11. A coil 12 is provided so as to wind about the outer circumference of the plasma-generating tube at the downstream end of the CCP electrode 13. A parasitic-plasma-preventing tube 15 made of a ceramic material is inserted into an opening of the supply tube 10 at the connection site between the supply tube 10 and the plasma-generating tube 11.

Abstract: In an atmospheric inductively coupled plasma generating apparatus, impedance matching between a coil for plasma generation and an RF power source is effected at a high speed. A control method and/or condition for the output frequency of an oscillator which supplies a power to the coil for plasma generation or a control method and a control condition for the output power of the oscillator are changed appropriately in accordance with a generation state of a plasma. When a plasma is not generated, the output frequency is controlled according to a first condition and, when a plasma is generated, the output frequency is controlled according to a second condition different from the first condition. When a plasma is not generated, the output power is controlled according to a third condition and, when a plasma is generated, the output power is controlled according to a fourth condition different from the third condition.

Abstract: A plasma processing apparatus for producing a set of Group IV semiconductor nanoparticles from a precursor gas is disclosed. The apparatus includes an outer dielectric tube, the outer tube including an outer tube inner surface and an outer tube outer surface, wherein the outer tube inner surface has an outer tube inner surface etching rate. The apparatus also includes an inner dielectric tube, the inner dielectric tube including an inner tube outer surface, wherein the outer tube inner surface and the inner tube outer surface define an annular channel, and further wherein the inner tube outer surface has an inner tube outer surface etching rate. The apparatus further includes a first outer electrode, the first outer electrode having a first outer electrode inner surface disposed on the outer tube outer surface.

Abstract: A device is disclosed for providing an inductively coupled radio frequency plasma flood gun. In one particular exemplary embodiment, the device is a plasma flood gun in an ion implantation system. The plasma flood gun may comprise a plasma chamber having one or more apertures; a gas source capable of supplying at least one gaseous substance to the plasma chamber; a single-turn coil disposed within the plasma chamber, and a power source coupled to the coil for inductively coupling radio frequency electrical power to excite the at least one gaseous substance in the plasma chamber to generate a plasma. The inner surface of the plasma chamber may be free of metal-containing material and the plasma may not be exposed to any metal-containing component within the plasma chamber. The plasma chamber may include a plurality of magnets for controlling the plasma.

Abstract: A hybrid plasma reactor includes a reactor body having a plasma discharge space, a gas inlet, and a gas outlet; a hybrid plasma source including a first hybrid electrode and a second hybrid electrode, which face each other while the reactor body is positioned therebetween and provide a current path having one or more turns, to be inductively and capacitively coupled to plasma formed in the plasma discharge space; and an alternating switching power supply for supplying plasma generation power to the first hybrid electrode and the second hybrid electrode. The hybrid plasma reactor can complexly generate capacitively coupled plasma and inductively coupled plasma, thereby achieving a wide operation area from a low-pressure area to a high-pressure area.

Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.

Abstract: An ion beam processing system includes a plasma generator with a magnetic flood system. Magnets are provided for reducing the transverse magnetic field in the ion beam transport region of the plasma flood device so as to control charging damage or to neutralize beam space charge in ion beam processing and semiconductor ion implantation. The system is especially adapted for beam lines with ribbon beams.

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having a plurality of slots. The SWP source further comprises a first recess configuration formed in the plasma surface, wherein the first recess configuration is substantially aligned with a first arrangement of slots in the plurality of slots, and a second recess configuration formed in the plasma surface, wherein the second recess configuration is either partly aligned with a second arrangement of slots in the plurality of slots or not aligned with the second arrangement of slots in the plurality of slots. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract: A plasma processing apparatus includes a vacuum evacuable processing chamber, at least a portion of which is formed of a dielectric window; a substrate supporting unit for supporting a target substrate in the processing chamber; and a processing gas supply unit for supplying a desired processing gas into the processing chamber. Further, the plasma processing apparatus includes an RF antenna provided outside the dielectric window; a high frequency power supply unit for supplying to the RF antenna a high frequency power; and a switching network switched among a parallel mode, a multiplication series mode, and a minimization series mode.

Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.

Abstract: An inductive plasma chamber of the present invention comprises a plurality of discharge tube bridges connected between a discharge tube head and a process chamber. The discharge tube head is disc shaped and a cylindrical gas inlet which a gas is injected is disposed in its center. A susceptor on which a workpiece is placed is disposed inside a process chamber and a flange of upper certain area has an inclined surface which is upward centrally inclined. The discharge tube bridge is provided with at least one ferrite core, and the ferrite core has a winding connected to a power supply source. When a process gas is injected via the gas inlet and a RF power from the power supply source is supplied with a winding, the electromotive force is transmitted inside the discharge tube head, the discharge bridge and the process chamber so that the plasma discharge is occurred in the plasma chamber.

Abstract: A plasma supply device includes a full bridge circuit that is connected to a DC power supply and that has two half bridges each with two series connected switching elements. The plasma supply device further includes a primary winding of a power transformer connected to centers of the half bridges between the switching elements. The primary winding includes a tapping connectable to an alternating current center between the potentials of the DC power supply.

Abstract: A water vapor plasma generating apparatus which is able to generate water vapor plasma stably is provided. By applying the water vapor plasma generated by the apparatus to an object to be treated, a sterilization and disinfection treatment can be performed. In addition, by applying the water vapor plasma generated by the apparatus to a substance containing an oily ingredient, an antioxidative treatment can be performed.

Abstract: A vertical plasma processing apparatus for performing a plasma process on a plurality of target objects together at a time includes an activation mechanism configured to turn a process gas into plasma. The activation mechanism includes a vertically elongated plasma generation box attached to a process container at a position corresponding to a process field to form a plasma generation area airtightly communicating with the process field, an ICP electrode provided to the plasma generation box, and an RF power supply connected to the electrode.

Abstract: A RF matching network is described, and which includes a 1st to nth RF generators, and wherein each RF generator has a different frequency, and wherein the frequencies of the 1st to the nth RF input ports decline in sequence, and wherein between the ith frequency RF input port, and the output port is a ith circuit, which has a high impedance at the output port to all RF generator frequencies other than the ith frequency; and wherein the ith circuit, when connected to a RF generator with the ith frequency, and wherein measuring from the output port to the ith circuit, the ith circuit has a first impedance at the ith frequency; and when measuring from the output port in the opposite direction to the ith circuit, the ith circuit has a second impedance at the ith frequency; and wherein the first impedance is a substantial conjugate match of the second impedance.

Abstract: Systems, methods, and Apparatus for controlling the spatial distribution of a plasma in a processing chamber are disclosed. An exemplary system includes a primary inductor disposed to excite the plasma when power is actively applied to the primary inductor; at least one secondary inductor located in proximity to the primary inductor such that substantially all current that passes through the secondary inductor results from mutual inductance through the plasma with the primary inductor. In addition, at least one terminating element is coupled to the at least one secondary inductor, the at least one terminating element affecting the current through the at least one secondary inductor so as to affect the spatial distribution of the plasma.

Abstract: An induction coil composed of n pieces of identically shaped coil elements (where n is equal to or greater than two), which are rotation-symmetrically arranged with respect to an axis normal to the surface of an object to be processed, is provided above the object, the coil elements being electrically connected in parallel. Each of the coil elements of the induction coil encircles the aforementioned axis, with the ground end and the feed end located at the same position on a projection plane on the object with the ground end under the feed end. Each coil element has a bottom portion shaped like an arc having a predetermined width and a central angle of 360°/n, with the ground end at one end thereof, and a feed portion shaped like an arc having a predetermined width, with the feed end at one end thereof, the feed portion being located above the bottom portion and electrically connected to the same bottom portion.

Abstract: A number of RF power transmission paths are defined to extend from an RF power source through a matching network, through a transmit electrode, through a plasma to a number of return electrodes. A number of tuning elements are respectively disposed within the number of RF power transmission paths. Each tuning element is defined to adjust an amount of RF power to be transmitted through the RF power transmission path within which the tuning element is disposed. A plasma density within a vicinity of a particular RF power transmission path is directly proportional to the amount of RF power transmitted through the particular RF power transmission path. Therefore, adjustment of RF power transmitted through the RF power transmission paths, as afforded by the tuning element, enables control of a plasma density profile across a substrate.

Abstract: A plasma device configured to receive ionizable media is disclosed. The plasma device includes a first pair of dielectric substrates each having an inner surface and an outer surface. The first pair of dielectric substrates is disposed in spaced, parallel relation relative to one another with the inner surfaces thereof facing one another. The device also includes a first pair of spiral coils each disposed on the inner surface of the dielectric substrates. The first pair of spiral coils is configured to couple to a power source and configured to inductively couple to an ionizable media passed therebetween to ignite the ionizable media to form a plasma effluent.

Abstract: A device for coupling ionization energy into an ion or electron source, which is excited inductively or inductively-capacitively is provided. The device includes: a discharge vessel for a gas, which is to be ionized; a coupling coil, which is wound around the discharge vessel and feeds in a high frequency energy, which is required for plasma excitation; a coupling capacitor, which is electrically coupled to the coupling coil; a high frequency generator, which is electrically coupled to the coupling coil. The high frequency generator forms, together with the at least one coupling capacitor, a resonant circuit. The high frequency generator includes a PLL controller for automatic impedance matching of the resonant circuit, so that the resonant circuit can be driven at a resonant frequency.

Abstract: A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.

Abstract: A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

Abstract: A device including two plasma generation electrodes, a series resonator having a resonant frequency above 1 MHz and including a capacitor with two terminals, and an induction coil surrounded by a screen, the capacitor and the coil being placed in series, the electrodes being connected to the respective terminals of the capacitor. The ratio of the spark plug to the radius of the screen is equal to 0.56. The device can optimize the Q-factor of such a device by adjusting the radius of the coil to that of the screen.

Abstract: Disclosed herein are systems, methods and apparatuses for dissociating a non-activated gas through a disc-shaped plasma in a remote plasma source. Two inductive elements, one on either side of the disc-shaped plasma, generate a magnetic field that induces electric fields that sustain the disc-shaped plasma. The inductive elements can be coiled conductors having any number of loops and can be arranged in planar or vertical coils or a combination of planar and vertical coils. Additionally, the ratio of inductive element radius to gap distance between the two inductive elements can be configured to achieve a desired vertical plasma confinement.

Abstract: A surface wave plasma generating antenna serves to generate a surface wave plasma in a chamber by radiating into the chamber a microwave transmitted from a microwave output section through a coaxial waveguide including an outer conductor and an inner conductor. The surface wave plasma generating antenna is formed in a planar shape and has a plurality of slots arranged in a circumferential direction, and each joint portion between two adjacent slots in the circumferential direction is overlapped with at least one of the slots in a diametrical direction.

Abstract: A tunable LC circuit is used to trigger an electron discharge from an accelerator device, such as a Betatron. The circuit includes a coil as a first inductor having a first inductance electrically coupled in series with a capacitor. A second inductor having a variable inductance is electrically coupled, either in series or parallel, to the first inductor. The time to capacitor discharge is governed by: ?LC=?{square root over ((L+LTUNE)C)}. Adjusting the inductance of the variable inductor (LTUNE) facilitates continuous adjustment of the discharge time. This is particularly useful when the LC values change in response to external stimuli, such as borehole temperature when a Betatron is used to log borehole features.

Abstract: The plasma generator of our invention comprises of the induction coil which is symmetric with respect to the reference plane between two terminal ends. Plasma processing gas is supplied to a predetermined space, and high frequency electricity is supplied to the induction coil, thereby the plasma generator generates plasma in the space. The reference plane passes between the two terminal ends and through longitude axis of the induction coil. The plasma generator can generate plasma with high quality of homogeneous.

Abstract: This disclosure describes systems, methods, and apparatus for capacitively coupling energy into a plasma to ignite and sustain the plasma within a remote plasma source. The power is provided by a first electrode that at least partially surrounds or is surrounded by a second electrode. The second electrode can be grounded or floating. First and second dielectric components can be arranged to separate one or both of the electrodes from the plasma and thereby DC isolate the plasma from one or both of the electrodes.

Abstract: A plasma device configured to receive ionizable media is disclosed. The plasma device includes a first pair of dielectric substrates each having an inner surface and an outer surface. The first pair of dielectric substrates is disposed in spaced, parallel relation relative to one another with the inner surfaces thereof facing one another. The device also includes a first pair of spiral coils each disposed on the inner surface of the dielectric substrates. The first pair of spiral coils is configured to couple to a power source and configured to inductively couple to an ionizable media passed therebetween to ignite the ionizable media to form a plasma effluent.

Abstract: A pulse plasma matching system includes an RF matching box configured to receive an RF power pulse generated by an RF power source, configured to perform a plasma impedance matching, and configured to apply the RF power pulse to a process chamber, and a network analyzer configured to measure an impedance of plasma generated in a process chamber. A controller is configured to generate a capacitance control signal corresponding to a plasma impedance value measured by the network analyzer, configured to supply the capacitance control signal to the RF matching box, and configured to generate an impedance matching compensation pulse, and a phase shifter is configured to receive the impedance matching compensation pulse and to shift a phase of the impedance matching compensation pulse to synchronize the impedance matching compensation pulse to the RF power pulse.

Abstract: A system and method for over-voltage protection is described. In one embodiment of the invention, an apparatus includes an output port configured to deliver power to a plasma chamber to ignite a plasma. The apparatus also includes a shunt switch in parallel with the output port and a processor configured to receive an indicator of an arc in the plasma. The processor is configured to close the shunt switch for a period of time to divert current away from the arc. The processor is also configured to trigger a pulse of the shunt switch to limit a voltage of an increasing voltage condition associated with the arc.

Abstract: A plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be suppressed and controlled in order to manufacture stable products. In a method of disposing an object in a chamber and generating the plasma to treat the object, the chamber is sealed by a surrounding member so as to have an inner space, with at least a part of the member including a dielectric material, an RF induction coil is disposed outside the dielectric member, and a direct-current electric field is supplied into the inner space by a method of passing a direct current through the RF induction coil or another method, so that the plasma is stabilized.

Abstract: Respective pulsed power supplies for plasma opening switches each produce a first current and a second current during a power pulse and a difference between the first current and the second current during a terminal portion of the power pulse. The pulsed power supplies are initiated or adjusted in response to measured opening times of the plasma opening switches in order to minimize or eliminate a need for command triggered opening of the plasma opening switches. Command triggered opening may occur in real time for a shot as needed in response to asymmetry of opening times of the plasma opening switches in the array during the shot.

Abstract: A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.

Abstract: An apparatus for generating plasma including a plasma generating vessel and a coil having a coil length and a first set of partially enclosing, longitudinally oriented conductive (PELOC) fingers and a second set of PELOC fingers. The PELOC finger sets are oriented along a longitudinal axis of the vessel with each partially enclosing a periphery of the vessel. The two sets of PELOC fingers are oriented fingertips facing fingertips and separated by an inter-set distance that is less than the coil length.

Abstract: Atmospheric inductively coupled plasma torch comprising a vessel within which the plasma is generated and a coil wound around the periphery of the vessel. The coil has at least two spaced-apart winding layers. The coil is constructed such that all winding layers of a given multi-turn is wound before an adjacent multi-turn is wound. A first end of the coil is coupled to ground, and a second end of the coil is coupled to receive a RF driver signal that is configured to ignite the plasma to facilitate processing.

Abstract: An antenna unit for generating a plasma includes: a first antenna including a first incoming portion and a plurality of first sub-antennas divided from the first incoming portion; and a second antenna including a second incoming portion and a plurality of second sub-antennas divided from the second incoming portion, the first and second incoming portions constituting a coaxial line.

Abstract: A method for producing light includes introducing an ionizable medium for generating a plasma into a chamber. The method also includes applying at least one pulse of energy to a magnetic core that surrounds a portion of a plasma discharge region within the chamber such that the magnetic core delivers power to the plasma which forms a secondary of a transformer according to Faraday's law of induction. The plasma has a localized high intensity zone.

Abstract: A magnetohydrodynamic simulator that includes a plasma container. The magnetohydrodynamic simulator also includes an first ionizable gas substantially contained within the plasma container. In addition, the magnetohydrodynamic simulator also includes a first loop positioned adjacent to the plasma container, wherein the first loop includes a gap, a first electrical connection on a first side of the gap, a second electrical connection of a second side of the gap, and a first material having at least one of low magnetic susceptibility and high conductivity. The first loop can be made up from an assembly of one or a plethora or wire loop coils. In such cases, electrical connection is made through the ends of the coil wires. The magnetohydrodynamic simulator further includes an electrically conductive first coil wound about the plasma container and through the first loop.

Abstract: A plasma power supply system for producing electrical power in the range between 1 kW and 100 kW for a plasma processing system and supplying the power to a plasma chamber through a power line connection, the plasma power supply system includes a power converter, a monitoring section, an arc diverter, a control section with an arc diverter control section and an arc detection section, and an input device wherein the input device is connected to the arc diverter.