Abstract: The plasma generation device comp rising first plasma generation chamber 10 which has gas feed opening 12 and plasma exit 13, and first plasma generation means 11 which is arranged in space of said first plasma generation chamber in state of not exposed, and second plasma generation chamber 20 which has plasma feed opening 22 whereby plasma generated said first plasma generation chamber through said plasma exit, and second plasma generation means 21 which is arranged in space of said second plasma generation chamber in state of not exposed wherever generating higher density than plasma generated by said first plasma generation chamber.

Abstract: A magnetohydrodynamic simulator that includes a plasma container. The magnetohydrodynamic simulator also includes an first ionizable gas substantially contained within the plasma container. In addition, the magnetohydrodynamic simulator also includes a first loop positioned adjacent to the plasma container, wherein the first loop includes a gap, a first electrical connection on a first side of the gap, a second electrical connection of a second side of the gap, and a first material having at least one of low magnetic susceptibility and high conductivity. The first loop can be made up from an assembly of one or a plethora or wire loop coils. In such cases, electrical connection is made through the ends of the coil wires. The magnetohydrodynamic simulator further includes an electrically conductive first coil wound about the plasma container and through the first loop.

Abstract: There is provided a plasma processing apparatus for generating inductively coupled plasma in a processing chamber and performing a process on a substrate accommodated in the processing chamber. The plasma processing apparatus includes an upper cover installed to cover a top opening of the processing chamber and having a dielectric window; a high frequency coil installed above the dielectric window at an outer side of the processing chamber; a gas supply mechanism supported by the upper cover and installed under the dielectric window. Here, the gas supply mechanism includes a layered body including plates having through holes. Further, the gas supply mechanism is configured to supply a processing gas into the processing chamber in a horizontal direction via groove-shaped gas channels installed between the plates or between the plate and the dielectric window, and end portions of the groove-shaped gas channels are opened to edges of the through holes.

Abstract: An apparatus for use in mass spectrometry comprising an injector body, an injection tube coupled to the injector body, and a shielding assembly disposed between the injector body and the injection tube. The shielding apparatus is suitable for shielding the injector body from heat generated by a plasma source.

Abstract: An arc suppression arrangement suppresses arcs in a gas discharge device that is operated with an alternating voltage from a power supply. The arc suppression arrangement includes an arc suppression device and an arc identification device that controls the arc suppression device. The arc suppression device includes at least one controllable resistor that is connected in series in an electrical line that extends from an alternating voltage source to an electrode of the gas discharge device. An arc can thereby be prevented from being provided with energy.

Abstract: A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of alternating high and low energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle.

Abstract: A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.

Abstract: To sustain uniform generation of plasma constantly over a large area. In the surface wave excitation plasma processing device, a plasma source includes: a microwave generator, a microwave waveguide and a dielectric block; and a plasma source also includes: a microwave generator, a microwave waveguide and a dielectric block. The lid of a chamber is fixed onto the microwave waveguides in parallel, and the dielectric blocks disposed in the chamber. A reflecting plate is disposed between the dielectric blocks so that electromagnetic waves propagating through the dielectric blocks are prevented from advancing into the counterpart dielectric blocks as reflected waves. Consequently, the plasma sources are controlled independently. Furthermore, a side reflector is disposed at outer circumference of each of the dielectric blocks so that a standing waves of the electromagnetic waves propagating through the dielectric blocks is formed thus forming a large area standing wave mode of surface waves uniformly.

Abstract: A method for generating atmospheric pressure cold plasma inside a hand-held unit discharges cold plasma with simultaneously different rf wavelengths and their harmonics. The unit includes an rf tuning network that is powered by a low-voltage power supply connected to a series of high-voltage coils and capacitors. The rf energy signal is transferred to a primary containment chamber and dispersed through an electrode plate network of various sizes and thicknesses to create multiple frequencies. Helium gas is introduced into the first primary containment chamber, where electron separation is initiated. The energized gas flows into a secondary magnetic compression chamber, where a balanced frequency network grid with capacitance creates the final electron separation, which is inverted magnetically and exits through an orifice with a nozzle. The cold plasma thus generated has been shown to be capable of accelerating a healing process in flesh wounds on animal laboratory specimens.

Abstract: A focused ion beam (FIB) system is disclosed, comprising an inductively coupled plasma ion source, an insulating plasma chamber containing the plasma, a conducting source biasing electrode in contact with the plasma and biased to a high voltage to control the ion beam energy at a sample, and a plurality of apertures. The plasma within the plasma chamber serves as a virtual source for an ion column comprising one or more lenses which form a focused ion beam on the surface of a sample to be imaged and/or FIB-processed. The plasma is initiated by a plasma igniter mounted near or at the column which induces a high voltage oscillatory pulse on the source biasing electrode. By mounting the plasma igniter near the column, capacitive effects of the cable connecting the source biasing electrode to the biasing power supply are minimized. Ion beam sputtering of the apertures is minimized by proper aperture materials selection.

Abstract: An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

Abstract: An inductive plasma applicator comprises a ferromagnetic inductively coupled source and an electrode with a hole pattern centered with respect to the plasma source. Such plasma applicator provides an efficient energy transfer to the plasma. The plasma applicator is preferably manufactured using a technology for producing electrical circuits. The electrode and a coil of the ferromagnetic inductively coupled plasma source are metal track portions formed on an insulating substrate. For example, the plasma applicator is manufactured using printed circuit board technology.

Abstract: Plasma generating devices, systems and processes are provided in which hybrid capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources use a plurality of primary plasma generating cells embedded into large area electrode or elsewhere in communication with a plasma processing chamber. Plasma is generated and maintained by a shaped low-inductance element within each of a plurality of locally enhanced ICP micro-cells coupled to the chamber through a CCP electrode. The source is suitable for processing large diameter (300 mm and larger) semiconductor wafers and large area panels, including plasma screen displays.

Abstract: In accordance with one embodiment of the present invention, the dielectric discharge chamber of a generally axially symmetric ion source has a hollow cylindrical shape. One end of the discharge chamber is closed with a dielectric wall. The working gas is introduced through an aperture in the center of this wall. The ion-optics grids are at the other end of the discharge chamber, which is left open. The inductor is a helical coil of copper conductor that surrounds the cylindrical portion of the dielectric discharge chamber. The modification that produces uniformity about the axis of symmetry is a shorted turn of the helical-coil inductor at the end of the inductor closest to the ion-optics grids.

Abstract: A system, method and apparatus for monitoring a processing system is disclosed. The method includes obtaining N parameter-value pairs that include a first parameter value and a second parameter value; obtaining, for each parameter-value pair, the product of the first parameter value and the complex conjugate of the second parameter value to obtain N products defined by a real part and an imaginary part; obtaining, for each parameter-value pair, a product of the second parameter value and the complex conjugate of the second parameter value to obtain N real numbers; calculating an average reflection coefficient by dividing an imaginary number by an average of the N real numbers, the real component of the imaginary number being equal to the average of the real parts of the N products and the imaginary part of the imaginary number being equal to an average of the imaginary parts of the N products.

Abstract: A method and apparatus for exciting gas that involves generating an alternating magnetic field unidirectionally through a magnetic core defining a gap, across the gap and through a plasma vessel that includes dielectric material. The magnetic field induces an electric field in the plasma vessel that generates the plasma.

Abstract: A radio frequency plasma generator power supply, including: an interface that receives a request to determine an optimal control frequency; an output interface configured to be connected to a plasma generation resonator; a power supply module configured to apply a voltage at a set point frequency to the output interface, the voltage, depending on its frequency, selectively unable to allow generation of plasma of the resonator on receipt of a request during a phase optimizing power supply frequency of the generator and able to allow generation of plasma of the resonator during an operating phase; an interface that receives an electrical measurement of power supply of the resonator; a module that determines optimal control frequency, successively provides various set point frequencies to the power supply module on receipt of a request, and determines an optimal control frequency depending on electrical measurements received by the reception interface.

Abstract: A system and method for preventing formation of a plasma-inhibiting substance within a plasma chamber is provided. In one embodiment, an apparatus that includes a barrier component configured to be disposed within a plasma chamber. The barrier component includes a wall that defines a plasma formation region where a chemically-reducing species is formed from a fluid. A portion of the wall is formed of a substance that is substantially inert to the chemically-reducing species. The wall prevents the chemically-reducing species from interacting with an inner surface of the plasma chamber to form a conductive substance. The barrier component also includes an opening in fluid communication with the plasma formation region. The fluid is introduced into the plasma formation region via the opening.

Abstract: A plasma device configured to receive ionizable media is disclosed. The plasma device includes a first pair of dielectric substrates each having an inner surface and an outer surface. The first pair of dielectric substrates is disposed in spaced, parallel relation relative to one another with the inner surfaces thereof facing one another. The device also includes a first pair of spiral coils each disposed on the inner surface of the dielectric substrates. The first pair of spiral coils is configured to couple to a power source and configured to inductively couple to an ionizable media passed therebetween to ignite the ionizable media to form a plasma effluent.

Abstract: An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor.

Abstract: The present invention pertains to RF (radio frequency) inductive coupling plasma (ICP) sources exciting and maintaining plasma within a closed and vacuum sealed discharge chamber filled with a gaseous medium at a controllable pressure in the range from 1 mTorr to atmospheric pressure. The inductively couple plasma source of the present invention includes a radio frequency source, a quasi-closed O-type solenoidal inductor comprised of two equal section U-shaped solenoid coil halves separated from one another to form two operating gaps between aligned spaced ends of the solenoid coil halves. Each of the U-shaped halves of the solenoid coil is sectioned to have an electrical midpoint connected to the radio frequency source and the distal outer ends of the solenoid coils, which correspond to the aforesaid aligned spaced ends of the quasi-closed solenoidal inductor, are connected to ground.

Abstract: An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.

Abstract: Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.

Abstract: Accelerated charged particles are provided by inductive amplification of particle energy in connection with a deflagration-mode plasma discharge. The deflagration mode discharge tends to increase particle energy relative to other operating modes. Inductive amplification of particle energy further increases output particle velocity. Inductive amplification can occur by formation of a current loop in the plasma discharge, and/or by a sudden increase in inductance due to collapse of the current distribution of the plasma discharge. Applications include particle therapy and production of radio-isotopes.

Abstract: An antenna adapted to apply uniform electromagnetic fields to a volume of gas and including radiating elements connected in parallel with evenly distributed input terminals for receiving electromagnetic energy into the antenna and output terminals for grounding. In the illustrative embodiment, the antenna has three radiating elements connected in parallel. Each radiating element is a conductor wound in a circular shape with the same diameter. Each radiating element is connected to the input terminal on one end and an output terminal on the other. The input terminal of the second element is 120° rotated counterclockwise from the first and the input terminal of the third is rotated by 120° counterclockwise from the second. The ground terminals of each radiating elements are located in the same manner as the input terminals. Each element is feed by a feeder coil.

Abstract: A RF matching network is described, and which includes a 1st to nth RF generators, and wherein each RF generator has a different frequency, and wherein the frequencies of the 1st to the nth RF input ports decline in sequence, and wherein between the ith frequency RF input port, and the output port is a ith circuit, which has a high impedance at the output port to all RF generator frequencies other than the ith frequency; and wherein the ith circuit, when connected to a RF generator with the ith frequency, and wherein measuring from the output port to the ith circuit, the ith circuit has a first impedance at the ith frequency; and when measuring from the output port in the opposite direction to the ith circuit, the ith circuit has a second impedance at the ith frequency; and wherein the first impedance is a substantial conjugate match of the second impedance.

Abstract: A microwave signal generator includes a magnetron to generate a microwave signal, a coupler to receive the microwave signal generated by the magnetron and to send the microwave signal to a load; and a band-pass filter to receive the microwave signal from the coupler and to filter the microwave signal to obtain a signal from an oscillation frequency band of the magnetron. The band-pass filter feeds the signal from the oscillation frequency band back to the magnetron in order to fix an oscillation frequency of the magnetron and is a DR (Dielectric Resonator) filter.

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source has a segmented configuration with high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna for the source is a planer coil having at least two windings with the gap between the windings variable or modulated to control the antenna inductance around the antenna. The antenna has a plurality of, for example three, high inductance segments as a result of the conductor windings being closely spaced alternating with low inductance segments as a result of the conductor windings being widely spaced. The antenna and a shield are part of a plasma source.

Abstract: An RF power generator (10) for an induction coil (26) for exciting an inductively coupled plasma in a torch (27) for spectrometry. The generator (10) comprises a switching circuit (12) for alternately switching ON and OFF solid state switching devices (20) via gate drive voltages (22) for supplying RF power into a resonant load circuit (16) comprising the induction coil (26) and parallel connected capacitance (25). The gate drive circuits (24) for each solid state switching device (20) each include a portion (30) that is mutually inductively coupled with leads of the induction coil (26) to provide the gate drive voltages (22). The circuit allows for reduced componentry and therefore a relatively inexpensive RF power generator for exciting and sustaining an inductively coupled plasma for spectrometry.

Abstract: An antenna array for a radio frequency plasma process chamber including, an array of electrodes, an array of dielectric tubes concentrically disposed about each electrode tube to define a chamber configured to be at atmospheric pressure between an outer surface of each electrode tube and an inner surface of the corresponding dielectric tube, and a hermetic seal between each dielectric tube and the plasma process chamber configured to allow a vacuum or low pressure in the plasma process chamber.

Abstract: A system (10) for coating surfaces of a workpiece (12) comprises a biasing system (242) for connection to said workpiece (12) and an anode (76) such as to negatively bias the workpiece relative to the anode and a vacuum source (42, 44) for evacuating an interior of the workpiece (12). A gas supply (224, 226, 228) is employed for introducing a gas containing a treatment material to said workpiece and a control system (244) controls the biasing system (242), the vacuum source (42, 44) and the gas supply (224, 226, 228) so as to establish a hollow cathode effect within the workpiece (12). A pair of coupling heads (16, 18) are supported on articulated arms (22, 24, 26) movable in one or more of three axes and include removable shields (78) to protect the heads (16, 18) and an anode mount (74) for receiving an anode (76). The articulated arms allow the system to accommodate a plurality of different shaped and different sized workpieces while the shields protect the coupling heads during a deposition process.

Abstract: A low inductance RF antenna is provided for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The antenna has a planar segmented configuration having high and low efficiency segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. The antenna has closely spaced conductor segments through which current flows in one or more small cross-section conductors to produce high magnetic fields while alternating widely spaced conductor segments produce low strength magnetic fields.

Abstract: An inductive plasma applicator comprises a ferromagnetic inductively coupled source and an electrode with a hole pattern centred with respect to the plasma source. Such plasma applicator provides an efficient energy transfer to the plasma. The plasma applicator is preferably manufactured using a technology for producing electrical circuits. The electrode and a coil of the ferromagnetic inductively coupled plasma source are metal track portions formed on an insulating substrate. For example, the plasma applicator is manufactured using printed circuit board technology.

Abstract: A plasma power supply system for producing electrical power in the range between 1 kW and 100 kW for a plasma processing system and supplying the power to a plasma chamber through a power line connection, the plasma power supply system includes a power converter, a monitoring section, an arc diverter, a control section with an arc diverter control section and an arc detection section, and an input device wherein the input device is connected to the arc diverter.

Abstract: A neutral beam etching device for separating and accelerating a plasma is provided. The device includes a first chamber having a first opening formed at one side thereof; a second chamber having a second opening formed at one side thereof and being disposed inside the first chamber to form a plasma generation area; a first channel fluidly communicating the first opening with the plasma generation area; a second channel fluidly communicating the second opening with the plasma generation area; a coil disposed on an outer surface of the first chamber and which generates a magnetic field to generate a plasma in the plasma generation area; and an acceleration part disposed within the first and second chambers and configured to separate the plasma into a positive ion and an electron, accelerate the positive ion and the electron, and discharge the positive ion and electron through the first and the second channels.

Abstract: A coil is provided for use in a semiconductor processing system to generate a plasma with a magnetic field in a chamber. The coil comprises a first coil segment, a second coil segment and an internal balance capacitor. The first coils segment has a first end and a second end. The first end of the coil segment is adapted to connect to a power source. The second coil segment has a first and second end. The second end of the first coil segment is adapted to connect to an external balance capacitor. The internal balance capacitor is connected in series between the second end of the first coil segment and the first end of the second coil segment. The internal balance capacitor and the coil segments are adapted to provide a voltage peak along the first coil segment substantially aligned with a virtual ground along the second coil segment.

Abstract: Described are methods and apparatuses, including computer program products, for igniting and/or sustaining a plasma in a reactive gas generator. Power is provided from an ignition power supply to a plasma ignition circuit. A pre-ignition signal of the plasma ignition circuit is measured. The power provided to the plasma ignition circuit is adjusted based on the measured pre-ignition signal and an adjustable pre-ignition control signal. The adjustable pre-ignition control signal is adjusted after a period of time has elapsed.

Abstract: A plasma reactor for processing a workpiece in a reactor chamber having a wafer support pedestal within the chamber and process gas injection apparatus, an RF bias power generator coupled to the wafer support pedestal and having a bias frequency, a source power applicator, an RF source power generator having a source frequency and a coaxial cable coupled between the RF source power generator and the source power applicator includes a filter connected between the coaxial cable and the source power applicator that enhances uniformity of etch rate across the wafer and from reactor to reactor. The filter includes a set of reflection circuits coupled between the source power applicator and a ground potential and being tuned to, respectively, the bias frequency and intermodulation products of the bias frequency and the source frequency.

Abstract: An integrated capacitively-coupled and inductively-coupled device is provided for plasma etching that may be used as a primary or secondary source for generating a plasma to etch substrates. The device is practical for processing advanced semiconductor devices and integrated circuits that require uniform and dense plasma. The invention may be embodied in an apparatus that contains a substrate support, typically including an electrostatic chuck, that controls ion energy by capacitively coupling RF power to the plasma and generating voltage bias on the wafer relative to the plasma potential. An etching electrode is provided opposite the substrate support. An integrated inductive coupling element is provided at the perimeter of the etching electrode that increases plasma density at the perimeter of the wafer, compensating for the radial loss of charged particles toward chamber walls, to produce uniform plasma density above the processed wafer.

Abstract: A plasma supply device generates an output power greater than 500 W at an essentially constant basic frequency greater than 3 MHz and powers a plasma process to which is supplied the generated output power, and from which reflected power is returned to the plasma supply device. The plasma supply device includes at least one inverter connected to a DC power supply, which inverter has at least one switching element, and an output network, wherein the at least one output network includes at least one inductance that has at least one magnetic field strengthening element that is a Perminvar ferrite.

Abstract: A device including two plasma generation electrodes, a series resonator having a resonant frequency above 1 MHz and including a capacitor with two terminals, and an induction coil surrounded by a screen, the capacitor and the coil being placed in series, the electrodes being connected to the respective terminals of the capacitor. The ratio of the spark plug to the radius of the screen is equal to 0.56. The device can optimize the Q-factor of such a device by adjusting the radius of the coil to that of the screen.

Abstract: A plasma generating apparatus includes a plurality of discharge cells in which a gas is excited by a high frequency excitation signal produced at an inverter. Each of a plurality of transformers couples the excitation signal from the inverter to one of the discharge cells, thereby forming a separate resonant circuit that has a resonant frequency. A gap in the transformer core creates a stray magnetic field outside the transformer. The plurality of transformers are in close proximity to each other so that the stray magnetic field from one transformer is coupled to at least one other transformer. Coupling the stray magnetic fields between transformers results in each resonant circuit resonating at the same frequency.

Abstract: A plasma excitation module including a chamber, a plurality of coils and a multi-duct gas intake system is provided. The chamber has a dielectric layer. The coils are disposed at an outer side of the dielectric layer, and the coils are separated from each other by an interval and in parallel connection. The multi-duct gas intake system surrounds the dielectric layer and is communicated with the chamber.

Abstract: A clamp assembly for bringing an RF sensor into electrical contact with an RF current carrier is provided herein. The clamp assembly (101) comprises a first wedge-shaped element (103), and a second wedge-shaped element (105) which is slidingly engaged with said first wedge-shaped element. Preferably, the clamp assembly also comprises a collar (113) within which the first and second wedge-shaped elements are disposed. The clamp assembly preferably further comprises a fastener (111), such as a screw, which adjoins the first and second elements, in which case the clamp assembly is adapted such that, as the screw is rotated in a first direction, at least one of the first and second elements expands against the collar and/or the RF current carrier.

Abstract: An etching method and an etching system are adapted to produce a high etch selectivity for a mask, an excellent anisotropic profile and a large etching depth. An etching system according to the invention comprises a floating electrode arranged vis-à-vis a substrate electrode in a vacuum chamber and held in a floating state in terms of electric potential, a material arranged at the side of the floating electrode facing the substrate electrode to form an anti-etching film and a control unit for intermittently applying high frequency power to the floating electrode.

Abstract: The impedance of a variable load is matched to the output resistance of an HF generator by performing a first impedance matching for a first load impedance and by performing a second impedance matching for a second load impedance. The first impedance matching is carried out at a first frequency and the second impedance matching is carried out at a second frequency.

Abstract: An induction coil composed of n pieces of identically shaped coil elements (where n is equal to or greater than two), which are rotation-symmetrically arranged with respect to an axis normal to the surface of an object to be processed, is provided above the object, the coil elements being electrically connected in parallel. Each of the coil elements of the induction coil encircles the aforementioned axis, with the ground end and the feed end located at the same position on a projection plane on the object with the ground end under the feed end. Each coil element has a bottom portion shaped like an arc having a predetermined width and a central angle of 360°/n, with the ground end at one end thereof, and a feed portion shaped like an arc having a predetermined width, with the feed end at one end thereof, the feed portion being located above the bottom portion and electrically connected to the same bottom portion.

Abstract: A betatron structure having a donut-shaped vacuum chamber, wherein the vacuum chamber is made up of two or more pieces bonded together; an injector positioned within the vacuum chamber; and two or more magnets positioned to the outside of the vacuum chamber. A method of manufacturing a betatron structure, including: (a) fabricating two or more pieces; (b) positioning an injector on one of the two or more pieces; and (c) bonding the two or more pieces such that when bonded, the substrates form a hollow donut-shaped chamber.

Abstract: There is provided by this invention an improved rf power control device for plasma applications for optimization of the feedback control voltage in the presence of harmonic and non-harmonic spurious frequencies. In this system, an oscillator and mixer, similar to those normally used in radio receiver applications are placed at the sampled output of the solid state rf signal source used for plasma ignition. The sampled output is mixed to a low frequency and filtered to remove the spurious frequencies that is created in the non-linear plasma. In this way, the feedback power control essentially ignores the spurious frequencies. In this application, the oscillator and mixer do not interfere with other desirable system characteristics and effectively isolate the feedback control voltage from changes in plasma spurious content. This allows rf power to be delivered to the plasma with greater accuracy than would otherwise be possible with conventional power control device and methods.