Abstract: A dual plasma source (80) is provided for a plasma processing system (10), comprising a first plasma source (82) and a second plasma source (84). The first plasma source (82) has a first plasma passageway (86) for transporting a first plasma therethrough toward a processing chamber (16), the first plasma passageway providing a first inlet (90) for accepting a first gas mixture to be energized by the first plasma source. The second plasma source (84) is connected to the first plasma source (82) and has a second plasma passageway (88) for transporting a second plasma therethrough toward the processing chamber (16), the second plasma passageway providing a second inlet (92) for accepting a second gas mixture to be energized by the second plasma source. The first plasma passageway (86) is constructed from a material that resists atomic oxygen recombination with the first plasma, and the second plasma passageway (88) is constructed from a material that resists etching by the second plasma.

Abstract: An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.

Abstract: The invention concerns an inductive plasma torch comprising an external tube, an intermediate tube and a central injector (16) including at least a central tube (20, 21) injecting reagent and a peripheral sheathing tube (22). A gas similar to plasma gas is injected into the space between the central tube (20, 21) and the sheathing tube (22), in conditions suited for obtaining a laminar flow, said flow remaining laminar up to the plasma torch central zone. The sheathing tube emerges substantially at the first turn of the inductor coil.

Abstract: An inductively coupled plasma-based device for use during integrated circuit fabrication is described which includes a planar coil electrode positioned adjacent to a dielectric structure physically separating the electrode from a reaction chamber in which a plasma is formed. The electrode presents a variable width adjacent to the dielectric structure, with the width of inner coil windings being less than the width of outer coil windings. The electrode is connected to a terminal capacitance, whose value may be varied to present different voltage amplitudes at different locations along the coil electrode. By locating the larger width coil windings near the reaction chamber walls, and by varying the capacitance value of the terminal capacitor, improved plasma-based processing may result.

Abstract: Apparatus and methods for producing a plasma in a plasma chamber are described. One embodiment includes two or more sources of magnetic flux, each of which defines a single magnetic pole adjacent to a plasma chamber window. Each magnetic flux source is laterally spaced apart from any other magnetic flux source so that, during operation of the plasma source, plasma generation in regions of the plasma chamber immediately adjacent to the magnetic flux sources is substantially greater than plasma generation in regions of the plasma chamber located between the two or more sources. Another embodiment includes an antenna positioned adjacent to the plasma chamber window, and a ferromagnetic core positioned adjacent to the antenna. The ferromagnetic core is configured to concentrate magnetic flux in the vicinity of the antenna through the plasma chamber window and into the plasma chamber.

Abstract: A plasma-enhanced chemical vapor deposition system includes a balancing inductor in the circuit path between the radio frequency generator and the “showerhead” that is used to introduce reactant gases to the system. The balancing inductor reduces the resonant frequency of the circuit to a level below the frequency of the signal produced by the radio frequency generator. Since the effective capacitance of the showerhead electrode varies monotonically with the power input to the plasma, fluctuations in the power delivered to the plasma will be self-correcting the system will be stabilized. For example, a drop in the power to the plasma will reduce the resonant frequency, but the corresponding reduction in the effective capacitance of the showerhead electrode will tend to increase the resonant frequency, thereby offsetting the change and stabilizing the system.

Abstract: A device for producing plasma includes an isolating pipe formed of an isolating material, a rod-shaped conductor positioned inside of the pipe, the rod-shaped conductor having an inner diameter that is smaller than the diameter of the of the isolating pipe, and an inner alternating electromagnetic field source connected to a first end of the conductor. The device also includes a conductive pipe positioned inside of the isolating pipe and concentrically around the conductor, the conductive pipe being formed so as to partially enclose the conductor, and an outer alternating electromagnetic field source connected to a first end of the conductive pipe.

Abstract: The present invention provides exemplary antenna coil assemblies and substrate processing chambers using such assemblies. In one embodiment, an antenna coil assembly (100) for a substrate processing chamber includes an antenna coil (102) disposed in a frame (104). The frame includes a plurality of spaced apart tabs (120) around a periphery of the frame, with the coil coupled to the frame at the tabbed locations. At least one notch (122) is provided between each pair of adjacent tabs. The notches are adapted to facilitate thermal expansion and contraction of the frame at the notched locations to reduce stresses on the frame and coil connections.

Abstract: Arranging a linear antenna in a container, and connecting a condenser to a grounding side of the linear antenna, and/or between a plurality of linear antennas, and changing capacity of the condenser, thereby changing high-frequency voltage distribution on the linear antenna and/or on the plurality of linear antennas, and controlling electrostatic coupling between the plasma and the linear antenna and/or the plurality of linear antennas.